Sensing units suitable for flexible substrates and their fabrication methods, multi-point sensing arrays

Abstract

This invention discloses a sensing unit suitable for flexible substrates and its fabrication method, as well as a multi-point sensing array, relating to the field of tactile sensor technology. It provides a technical solution for amplifying signals within pixels and reducing signal crosstalk between pixels within a sensing matrix. The solution includes a nanowire structure, a first dual-gate transistor, and a second dual-gate transistor. A first end of the nanowire structure is electrically connected to a bias voltage supply terminal; a second end of the nanowire structure is electrically connected to the source and first gate of the first dual-gate transistor; the second gate of the first dual-gate transistor is electrically connected to a first control terminal; and the drain of the first dual-gate transistor is grounded. The source of the second dual-gate transistor is electrically connected to the bias voltage; the first gate of the second dual-gate transistor is connected between the second end of the nanowire structure and the source of the first dual-gate transistor; the second gate of the second dual-gate transistor is electrically connected to a second control terminal; and the drain of the second dual-gate transistor is used to provide an output signal to the outside.

Description

Technical Field

[0001] This invention relates to the field of tactile sensor technology, and in particular to a sensing unit suitable for flexible substrates, its fabrication method, and a multi-point sensing array. Background Technology

[0002] Touch sensors typically convert external physical stimuli into electrical signals that can be detected by external reading circuitry, establishing a correspondence between the two to achieve the purpose of sensing. The size of the sensing elements in an array-type touch sensor directly determines the resolution of the touch sensing matrix. It should be understood that smaller sensing elements can achieve higher sensing resolution.

[0003] For signal acquisition in high-density array-type tactile sensors, one design approach is to use a passive array circuit design. This method acquires sensor signals by arranging a series of intersecting parallel conductive electrodes and distributing the sensing elements at the intersections of perpendicular wires. This signal readout method can significantly reduce the number of signal acquisition ports required. In this passive array circuit design, the signal of each pixel cannot be independently controlled; signal reading requires a multiplexing technique. Specifically, the circuit reads data by scanning row by row to acquire all signals. That is, when reading a certain signal, all sensors in that row are successively controlled by the corresponding column's drive signal. In this case, signal crosstalk can occur between the tactile sensing units in adjacent pixels. Summary of the Invention

[0004] The purpose of this invention is to provide a sensing unit suitable for flexible substrates and its fabrication method, as well as a multi-point sensing array, so as to provide a technical solution for amplifying the signal within a pixel and reducing signal crosstalk between pixels within the pixel of the sensing matrix.

[0005] In a first aspect, the present invention provides a sensing unit suitable for flexible substrates, the sensing unit suitable for flexible substrates comprising a nanowire structure, a first dual-gate transistor, and a second dual-gate transistor.

[0006] The first end of the nanowire structure is electrically connected to the bias voltage providing terminal, the second end of the nanowire structure is electrically connected to the source and the first gate of the first dual-gate transistor, the second gate of the first dual-gate transistor is electrically connected to the first control terminal, and the drain of the first dual-gate transistor is grounded.

[0007] The source of the second dual-gate transistor is electrically connected to the bias voltage. The first gate of the second dual-gate transistor is connected between the second end of the nanowire structure and the source of the first dual-gate transistor. The second gate of the second dual-gate transistor is electrically connected to the second control terminal. The drain of the second dual-gate transistor is used to provide an output signal to the outside, wherein the output signal is a voltage signal amplified from the bias voltage.

[0008] Compared with the prior art, the sensing unit for flexible substrates in this invention uses a nanowire structure as the sensor device. Since the nanowire structure itself has a small structural size, it can reduce the size of the sensing unit. Therefore, when the sensing unit for flexible substrates in this invention is applied to the sensing matrix, the spatial resolution of the sensing matrix can be improved.

[0009] The sensing unit for flexible substrates in this invention includes a first dual-gate transistor and a second dual-gate transistor. Based on the ultra-low leakage current characteristic of the dual-gate transistor, this invention can significantly reduce the static power consumption of the nanowire structure. When this sensing unit for flexible substrates is applied to a sensing array structure, row and column scanning is used when reading the sensed data. That is, when reading a certain row of data, the transistors in other rows are in the off state, and the signals between different pixels are not connected, thus solving the crosstalk problem between pixels. The nanowire structure and the first dual-gate transistor adopt a diode-like small-signal resistance connection mode. When external pressure changes the resistance of the nanowire structure, the voltage at the connection point between the nanowire structure and the first dual-gate transistor also changes accordingly, thus realizing the conversion of pressure signal to electrical signal. By adjusting the first gate of the first dual-gate transistor, the resistance of the first dual-gate transistor can be adjusted to match the resistance value of the nanowire structure, thereby improving the signal sensitivity of the sensing unit for flexible substrates. The output terminal of the nanowire structure connected to the first dual-gate transistor is connected to the first gate of the second dual-gate transistor. When the second dual-gate transistor is biased in the subthreshold region, the bias voltage applied to the top gate electrode has an exponential control over the current of the transistor in the subthreshold region. This method enables signal amplification within the pixel of the sensing unit and significantly improves the gain and signal-to-noise ratio of the output signal.

[0010] Furthermore, the sensing unit in this invention utilizes a first dual-gate transistor and a second dual-gate transistor to amplify the bias voltage. Therefore, signal amplification is achieved within the sensing unit suitable for flexible substrates, reducing signal crosstalk between pixels. Moreover, both the first and second dual-gate transistors in this invention are dual-gate transistors. On the one hand, this improves the sensing unit's tolerance to threshold voltage drift; on the other hand, by controlling the second gate of the first and second dual-gate transistors, the on / off state of the first and second dual-gate transistors can be controlled, enabling independent control of individual pixels and improving the sensitivity and multi-touch capability of the sensing unit.

[0011] In one possible implementation, the nanowire structure comprises zinc oxide nanowires or silicon nanowires.

[0012] In one possible implementation, the second gate of the first dual-gate transistor is used to control the first dual-gate transistor to be turned on or off under the action of the first control terminal; and / or, the second gate of the second dual-gate transistor is used to control the second dual-gate transistor to be turned on or off under the action of the second control terminal.

[0013] In a first aspect, the present invention also provides a method for fabricating a sensing unit suitable for a flexible substrate, the method comprising the following steps:

[0014] Provide substrate;

[0015] A first dual-gate transistor and a second dual-gate transistor are formed on the substrate; wherein the source of the first dual-gate transistor is electrically connected to the first gate, and the first gate of the second dual-gate transistor is electrically connected to the source of the first dual-gate transistor.

[0016] A nanowire structure is formed on the first dual-gate transistor, wherein the nanowire structure is electrically connected to the source of the first dual-gate transistor;

[0017] An encapsulation layer is formed on the first dual-gate transistor and the second dual-gate transistor; wherein the nanowire structure is placed in the encapsulation layer, and the top of the nanowire structure is exposed in the encapsulation layer;

[0018] A top electrode is formed on the nanowire structure; the top electrode is used for electrical connection to the bias voltage supply terminal.

[0019] A first through-hole and a second through-hole are formed in the encapsulation layer, wherein the first through-hole is connected to the second gate of the first dual-gate electrode, and the second through-hole is connected to the second gate of the second dual-gate electrode;

[0020] Conductive material is filled into the first through hole and the second through hole to form a first conductive part and a second conductive part, wherein the first conductive part is used to be electrically connected to a first control terminal and the second conductive part is used to be electrically connected to a second control terminal.

[0021] In one possible implementation, forming a nanowire structure on the first dual-gate transistor includes:

[0022] A nanowire material thin film is formed on the source of the first gate transistor;

[0023] Nanowire structures were grown on the nanowire material film using a hydrothermal growth method.

[0024] In one possible implementation, forming an encapsulation layer on the first dual-gate transistor and the second dual-gate transistor includes:

[0025] SU-8 thin films were formed on the first dual-gate transistor and the second dual-gate transistor using a spin coating process;

[0026] The SU-8 film is etched to expose the top of the nanowire structure, thus obtaining the encapsulation layer.

[0027] In one possible implementation, forming the top electrode on the nanowire structure includes:

[0028] A top electrode material layer is formed on the encapsulation layer;

[0029] The top electrode material layer is etched to retain the top electrode material layer on the nanowire structure, thus obtaining the top electrode.

[0030] In one possible implementation, the nanowire structure comprises zinc oxide nanowires or silicon nanowires.

[0031] In one possible implementation, the thickness of the nanowire structure is 2µm-20µm; and / or, the thickness of the second gate in the first dual-gate transistor is 20nm-100nm, and the thickness of the second gate in the second dual-gate transistor is 20nm-100nm.

[0032] Thirdly, the present invention also provides a multi-point sensing array, including the above-mentioned plurality of sensing units suitable for flexible substrates, wherein the plurality of sensing units suitable for flexible substrates are arranged in an array in the multi-point sensing array.

[0033] Compared with the prior art, the beneficial effects of the second and third aspects of the present invention are the same as the beneficial effects of the sensing unit of the above-described technical solution, and will not be repeated here. Attached Figure Description

[0034] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0035] Figure 1 The diagram shows a circuit structure of a sensing unit suitable for flexible substrates according to an embodiment of the present invention.

[0036] Figure 2 (a) shows a schematic diagram of placing a mold onto a sensor array according to an embodiment of the present invention;

[0037] Figure 2 (b) shows Figure 2 (a) shows the test results.

[0038] Figure 3 The diagram shows a flowchart of a method for fabricating a sensing unit suitable for flexible substrates according to an embodiment of the present invention. Detailed Implementation

[0039] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0040] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0041] Touch sensors typically convert external physical stimuli into electrical signals that can be detected by external reading circuitry, establishing a correspondence between the two to achieve the purpose of sensing. The size of the sensing elements in an array-type touch sensor directly determines the resolution of the touch sensing matrix. It should be understood that smaller sensing elements can achieve higher sensing resolution.

[0042] For signal acquisition in high-density array-type tactile sensors, one design approach is to use a passive array circuit design. This method acquires sensor signals by arranging a series of intersecting parallel conductive electrodes and distributing the sensing elements at the intersections of perpendicular wires. This signal readout method can significantly reduce the number of signal acquisition ports required. In this passive array circuit design, the signal of each pixel cannot be independently controlled; signal reading requires a multiplexing technique. Specifically, the circuit reads data by scanning row by row to acquire all signals. That is, when reading a certain signal, all sensors in that row are successively controlled by the corresponding column's drive signal. In this case, signal crosstalk can occur between the tactile sensing units in adjacent pixels.

[0043] Based on this, refer to Figure 1 This invention provides a sensing unit suitable for flexible substrates, comprising a nanowire structure, a first dual-gate transistor T1, and a second dual-gate transistor T2. The first end of the nanowire structure is connected to a bias voltage V. d A terminal electrical connection is provided, wherein the second end of the nanowire structure is electrically connected to the source and the first gate of the first dual-gate transistor T1, the second gate of the first dual-gate transistor T1 is electrically connected to the first control terminal, and the drain of the first dual-gate transistor T1 is grounded. The source of the second dual-gate transistor T2 is connected to the bias voltage V. d Electrically connected, the first gate of the second dual-gate transistor T2 is connected between the second end of the nanowire structure and the source of the first dual-gate transistor T1, the second gate of the second dual-gate transistor T2 is electrically connected to the second control terminal, and the drain of the second dual-gate transistor T2 is used to provide an output signal to the outside, wherein the output signal is a voltage signal after amplification of the bias voltage.

[0044] Compared with existing technologies, the sensing unit suitable for flexible substrates in this embodiment of the invention uses a nanowire structure as the sensor. Because the nanowire structure itself has a small structural size, it can reduce the size of the sensing unit. Therefore, when the sensing unit suitable for flexible substrates in this invention is applied to a sensing matrix, the spatial resolution of the sensing matrix can be improved. For example, the nanowire structure in this embodiment of the invention can be zinc oxide nanowires or silicon nanowires to achieve a small-sized nanowire structure with piezoelectric function.

[0045] The sensing unit suitable for flexible substrates in this embodiment of the invention includes a first dual-gate transistor T1 and a second dual-gate transistor T2. Based on the ultra-low leakage current characteristic of dual-gate transistors, the static power consumption of the nanowire structure can be greatly reduced, while also solving the crosstalk problem between pixels. The nanowire structure and the first dual-gate transistor T1 are connected in a diode-like small-signal resistance mode. When external pressure changes the resistance of the nanowire structure, the voltage at connection point A between the nanowire structure and the first dual-gate transistor T1 also changes accordingly, thus realizing the conversion of pressure signal to electrical signal. By adjusting the first gate of the first dual-gate transistor T1, the resistance of the first dual-gate transistor T1 can be adjusted to match the resistance value of the nanowire structure, thereby improving the signal sensitivity of the sensing unit suitable for flexible substrates. The output terminal of connection point A between the nanowire structure and the first dual-gate transistor T1 is connected to the first gate of the second dual-gate transistor T2. When the second dual-gate transistor T2 is biased in the subthreshold region, the top gate signal has an exponential control capability on the output signal current in the subthreshold region. This method amplifies the signal within the pixel of the sensing unit and greatly improves the gain and signal-to-noise ratio of the output signal.

[0046] Furthermore, the sensing unit in this embodiment of the invention utilizes a first dual-gate transistor T1 and a second dual-gate transistor T2 to amplify the bias voltage. Therefore, signal amplification is achieved within the sensing unit suitable for flexible substrates, reducing signal crosstalk between pixels. Moreover, both the first dual-gate transistor T1 and the second dual-gate transistor T2 in this invention are dual-gate transistors. On the one hand, this improves the sensing unit's tolerance to threshold voltage drift; on the other hand, by controlling the second gate of the first dual-gate transistor T1 and the second gate of the second dual-gate transistor T2, the on / off state of the first dual-gate transistor T1 and the second dual-gate transistor T2 can be controlled, enabling independent control of individual pixels and improving the sensitivity and multi-touch capability of the sensing unit.

[0047] Specifically, when the sensing unit suitable for flexible substrates in the embodiments of the present invention is applied to a pixel matrix, when it is necessary to turn on or off the first dual-gate transistor and the second dual-gate transistor in the sensing unit suitable for flexible substrates, the first dual-gate transistor can be turned on or off under the action of the first control terminal, and the second dual-gate transistor can be turned on or off under the action of the second control terminal.

[0048] Secondly, embodiments of the present invention also provide a multi-point sensing array, which includes a plurality of sensing units suitable for flexible substrates, wherein the plurality of sensing units suitable for flexible substrates are arranged in the sensing array in an array manner.

[0049] Reference Figure 2Place such as above the multi-point sensor array Figure 2 The mold shown in (a) is used to apply a pressure of 10N, which yields the following result: Figure 2 (b) shows the test results, where areas with higher brightness represent areas experiencing greater pressure on the pixel, and areas with lower brightness represent areas experiencing less pressure on the pixel. Figure 2 As can be seen in (b), an application was performed. Figure 2 The brightness of the area of ​​the mold shown in (a) is greater than that of other areas, which verifies the functionality of the pixel sensing unit in the embodiment of the present invention.

[0050] Based on the above description, the sensing unit suitable for flexible substrates in the multi-point sensing array of the present invention adopts a nanowire structure as a sensor device. Since the nanowire structure itself has a small structural size, it can reduce the size of the sensing unit, thereby improving the spatial resolution of the multi-point sensing matrix.

[0051] Furthermore, the sensing unit in this embodiment of the invention utilizes a first dual-gate transistor and a second dual-gate transistor to amplify the bias voltage. Therefore, signal amplification is achieved within the sensing unit suitable for flexible substrates, reducing signal crosstalk between pixels. Moreover, both the first and second dual-gate transistors in this invention are dual-gate transistors. On the one hand, this improves the sensing unit's tolerance to threshold voltage drift; on the other hand, by controlling the second gate of the first and second dual-gate transistors, the on / off state of the first and second dual-gate transistors can be controlled, enabling independent control of individual pixels in the sensing array. This also improves the sensitivity and multi-touch capability of the multi-point sensing array.

[0052] Thirdly, embodiments of the present invention also provide a method for fabricating a sensing unit suitable for flexible substrates, referring to... Figure 3 The method for fabricating the sensing unit suitable for flexible substrates includes the following steps:

[0053] S100, providing a substrate; wherein the substrate may be an insulating substrate.

[0054] S200, a first dual-gate transistor and a second dual-gate transistor are formed on the substrate; wherein the source of the first dual-gate transistor is electrically connected to the first gate of the first dual-gate transistor, and the first gate of the second dual-gate transistor is electrically connected to the source of the first dual-gate transistor.

[0055] Specifically, step 200 includes: depositing and patterning a first gate layer of a first dual-gate transistor and a second gate layer of a second dual-gate transistor on an insulating substrate to obtain a second gate of the first dual-gate transistor and a second gate of the second dual-gate transistor; growing a bottom gate dielectric layer on the second gate of the first dual-gate transistor and the second gate of the second dual-gate transistor using methods such as chemical vapor deposition, wherein the bottom gate dielectric layer can be a material such as aluminum oxide or silicon oxide; etching and opening holes in the bottom gate dielectric layer using methods such as wet etching; growing and patterning an active layer on the bottom gate dielectric layer using methods such as magnetron sputtering; growing and patterning the source and drain electrodes of the first dual-gate transistor and the second dual-gate transistor on the bottom gate dielectric layer using methods such as electron beam evaporation; growing a top gate dielectric layer on the source and drain electrodes using methods such as chemical vapor deposition; etching and opening holes in the top gate dielectric layer using methods such as wet etching; growing and patterning the first gate layer of the first dual-gate transistor and the first gate layer of the second dual-gate transistor on the top gate dielectric layer using methods such as electron beam evaporation, to obtain a first gate of the first dual-gate transistor and a first gate of the second dual-gate transistor.

[0056] The thickness of the second gate of the first dual-gate transistor and the second gate of the second dual-gate transistor are both between 20 nm and 100 nm. For example, the thickness of the second gate of both the first and second dual-gate transistors is 20 nm; or, the thickness of the second gate of both the first and second dual-gate transistors is 40 nm; or, the thickness of both the first and second gates is 100 nm.

[0057] S300, a nanowire structure is formed on the first dual-gate transistor, wherein the nanowire structure is electrically connected to the source of the first dual-gate transistor.

[0058] Specifically, step S300 includes forming a nanowire material thin film on the source of the first gate transistor. When the nanowire thin film is a zinc oxide thin film, it can be formed on the source of the first gate transistor using methods such as magnetron sputtering. Then, a nanowire structure is grown on the nanowire material thin film using a hydrothermal growth method. The thickness of the nanowire structure can be 2µm-20µm. For example, the thickness of the nanowire structure is 2µm; or, the thickness of the nanowire structure is 10µm; or, the thickness of the nanowire structure is 20µm.

[0059] S400, an encapsulation layer is formed on the first dual-gate transistor and the second dual-gate transistor; wherein the nanowire structure is placed in the encapsulation layer, and the top of the nanowire structure is exposed in the encapsulation layer.

[0060] Specifically, an SU8 thin film is spin-coated onto the first and second dual-gate transistors to form an encapsulation layer. The thickness of this layer is highly matched to the nanowire structure, and the nanowire tips are etched downwards using ICP / RIE or similar etching processes. It should be understood that using SU8 encapsulation ensures that the original device characteristics are maintained after the zinc oxide nanostructure is grown using the hydrothermal method, thus guaranteeing process stability and achieving good sensing characteristics.

[0061] S500, a top electrode is formed on the nanowire structure; the top electrode is used for electrical connection with the bias voltage supply terminal.

[0062] Specifically, S500 includes forming a top electrode material layer on the encapsulation layer; etching the top electrode material layer to retain the top electrode material layer on the nanowire structure, thereby obtaining the top electrode.

[0063] S600, a first through-hole and a second through-hole are formed in the encapsulation layer, wherein the first through-hole is connected to the second gate of the first dual-gate electrode, and the second through-hole is connected to the second gate of the second dual-gate electrode.

[0064] S700, conductive material is filled into the first through hole and the second through hole to form a first conductive part and a second conductive part, wherein the first conductive part is used to be electrically connected to a first control terminal, and the second conductive part is used to be electrically connected to a second control terminal.

[0065] This invention uses a small-sized patterned nanowire structure as a sensing unit. A preamplifier circuit and a dual-gate switch structure are designed within the pixel to amplify the sensing signal of the nanowire structure within the pixel, thereby reducing signal crosstalk between pixels.

[0066] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0067] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A sensing unit suitable for flexible substrates, characterized in that, The sensing unit suitable for flexible substrates includes a nanowire structure, a first dual-gate transistor, and a second dual-gate transistor. The first end of the nanowire structure is electrically connected to the bias voltage providing terminal, the second end of the nanowire structure is electrically connected to the source and the first gate of the first dual-gate transistor, the second gate of the first dual-gate transistor is electrically connected to the first control terminal, and the drain of the first dual-gate transistor is grounded. The source of the second dual-gate transistor is electrically connected to the bias voltage. The first gate of the second dual-gate transistor is connected between the second end of the nanowire structure and the source of the first dual-gate transistor. The second gate of the second dual-gate transistor is electrically connected to the second control terminal. The drain of the second dual-gate transistor is used to provide an output signal to the outside. The output signal is a voltage signal amplified from the bias voltage. When the second dual-gate transistor is biased in the subthreshold region, the top gate signal has an exponential control capability over the current of the output signal in the subthreshold region. By controlling the second gate of the first dual-gate transistor and the second gate of the second dual-gate transistor, the on / off state of the two transistors can be controlled, thereby achieving independent control of a single pixel.

2. The sensing unit suitable for flexible substrates according to claim 1, characterized in that, The nanowire structure includes zinc oxide nanowires or silicon nanowires.

3. The sensing unit suitable for flexible substrates according to claim 1, characterized in that, The second gate of the first dual-gate transistor is used to control the first dual-gate transistor to be turned on or off under the action of the first control terminal; and / or, the second gate of the second dual-gate transistor is used to control the second dual-gate transistor to be turned on or off under the action of the second control terminal.

4. A method for fabricating a sensing unit suitable for flexible substrates, characterized in that, The method for fabricating the sensing unit suitable for flexible substrates includes the following steps: Provide substrate; A first dual-gate transistor and a second dual-gate transistor are formed on the substrate; wherein the source of the first dual-gate transistor is electrically connected to the first gate of the first dual-gate transistor, and the first gate of the second dual-gate transistor is electrically connected to the source of the first dual-gate transistor. A nanowire structure is formed on the first dual-gate transistor, wherein the nanowire structure is electrically connected to the source of the first dual-gate transistor; An encapsulation layer is formed on the first dual-gate transistor and the second dual-gate transistor; wherein the nanowire structure is placed in the encapsulation layer, and the top of the nanowire structure is exposed in the encapsulation layer; A top electrode is formed on the nanowire structure; the top electrode is used for electrical connection to the bias voltage supply terminal. A first through-hole and a second through-hole are formed in the encapsulation layer, wherein the first through-hole is connected to the second gate of the first dual-gate electrode, and the second through-hole is connected to the second gate of the second dual-gate electrode; Conductive material is filled into the first through hole and the second through hole to form a first conductive part and a second conductive part, wherein the first conductive part is used to be electrically connected to a first control terminal and the second conductive part is used to be electrically connected to a second control terminal.

5. The method for fabricating a sensing unit suitable for flexible substrates according to claim 4, characterized in that, The formation of the nanowire structure on the first dual-gate transistor includes: A nanowire material thin film is formed on the source of the first gate transistor; Nanowire structures were grown on the nanowire material film using a hydrothermal growth method.

6. The method for fabricating a sensing unit suitable for flexible substrates according to claim 4, characterized in that, The step of forming a packaging layer on the first dual-gate transistor and the second dual-gate transistor includes: SU-8 thin films were formed on the first dual-gate transistor and the second dual-gate transistor using a spin coating process; The SU-8 film is etched to expose the top of the nanowire structure, thus obtaining the encapsulation layer.

7. The method for fabricating a sensing unit suitable for flexible substrates according to claim 4, characterized in that, The formation of the top electrode on the nanowire structure includes: A top electrode material layer is formed on the encapsulation layer; The top electrode material layer is etched to retain the top electrode material layer on the nanowire structure, thus obtaining the top electrode.

8. The method for fabricating a sensing unit suitable for flexible substrates according to claim 4, characterized in that, The nanowire structure includes zinc oxide nanowires or silicon nanowires.

9. The method for fabricating a sensing unit suitable for flexible substrates according to claim 4, characterized in that, The thickness of the nanowire structure is 2um-20um; and / or, the thickness of the second gate in the first dual-gate transistor is 20nm-100nm, and the thickness of the second gate in the second dual-gate transistor is 20nm-100nm.

10. A multi-point sensing array, characterized in that, It includes multiple sensing units suitable for flexible substrates as described in any one of claims 1-3, wherein the multiple sensing units suitable for flexible substrates are arranged in an array in the multi-point sensing array.

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