Fin-line-to-microstrip converter, waveguide-fin-line-microstrip conversion system

Abstract

Provided is a fin line-microstrip converter, comprising: a double-ridge fin line conversion section configured to receive an electromagnetic wave and convert the electromagnetic wave from a first mode to a second mode, the double-ridge fin line conversion section comprising: a first dielectric substrate; a first fin line transition layer disposed on the first dielectric substrate and parallel to a transmission direction of the electromagnetic wave; a second fin line transition layer disposed on an opposite side of the first dielectric substrate from the first fin line transition layer and parallel to the transmission direction of the electromagnetic wave; and a microstrip transmission section comprising: a narrow microstrip line connected to the first fin line transition layer, the direction from the first fin line transition layer to the narrow microstrip line being the same as the direction of the transmission direction of the electromagnetic wave; and an arc-shaped metal sheet disposed on the same side of the first dielectric substrate as the first fin line transition layer, and the center of curvature of the arc-shaped metal sheet being outside the range of the orthographic projection of the double-ridge fin line conversion section.

Description

Technical Field

[0001] This invention relates to the field of millimeter-wave technology, and in particular to a fin-to-microstrip converter and a waveguide-to-fin-to-microstrip conversion system. Background Technology

[0002] In the field of millimeter-wave technology, radio frequency circuits are generally composed of passive and active functional components. Currently, passive components in the millimeter-wave band are mainly rectangular waveguide structures. With the rapid development of millimeter-wave integrated circuit technology, microstrip lines, as a very important transmission medium in existing millimeter-wave integrated circuits, have been widely used.

[0003] Finline-to-microstrip converters combined with waveguides are crucial transition technologies in various millimeter-wave systems, including radar, communication, and electronic warfare. However, current finline-to-microstrip converters suffer from simple structures and relatively narrow bandwidths. Summary of the Invention

[0004] To at least partially overcome the technical defects of at least one or other inventions mentioned above, at least one embodiment of the present invention provides a fin-to-microstrip converter and a waveguide-to-fin-to-microstrip conversion system.

[0005] According to one aspect of the present invention, a fin-to-microstrip transducer is provided, comprising: a double-ridge fin-to-transformer segment configured to receive electromagnetic waves and convert the electromagnetic waves from a first mode to a second mode, the double-ridge fin-to-transformer segment comprising: a first dielectric substrate; a first fin transition layer disposed on the first dielectric substrate and parallel to the transmission direction of the electromagnetic waves; a second fin transition layer disposed on the side of the first dielectric substrate opposite to the first fin transition layer and parallel to the transmission direction of the electromagnetic waves; a microstrip transmission segment comprising: a narrow microstrip line connected to the first fin transition layer, the direction from the first fin transition layer to the narrow microstrip line being the same as the transmission direction of the electromagnetic waves; and an arc-shaped metal sheet disposed on the first dielectric substrate on the same side as the first fin transition layer, wherein the center of curvature of the arc-shaped metal sheet is outside the orthographic projection range of the double-ridge fin-to-transformer segment.

[0006] According to some exemplary embodiments, the straight edge of the bow-shaped metal sheet is on the same straight line as the bottom edge of the first fin transition layer, and the orthographic projection of the bow-shaped metal sheet on the first dielectric substrate is outside the orthographic projection range of the first fin transition layer and the second fin transition layer on the first dielectric substrate.

[0007] According to some exemplary embodiments, the radius of curvature of the aforementioned bow-shaped metal sheet is 0.8 to 1.2 times the width of the aforementioned double-ridge fin line transformation segment.

[0008] According to some exemplary embodiments, the spacing between the bow-shaped metal sheet and the first fin transition layer is 0.1 mm to 0.2 mm.

[0009] According to some exemplary embodiments, the microstrip line transmission segment further includes: a second dielectric substrate; and a wide microstrip line, wherein the narrow microstrip line and the wide microstrip line are disposed opposite to each other on two sides of the second dielectric substrate, wherein the length of the narrow microstrip line is the same as the length of the wide microstrip line, the width of the narrow microstrip line is smaller than the width of the wide microstrip line, and the width of the wide microstrip line is the same as the width of the double-ridge fin line transformation segment.

[0010] According to some exemplary embodiments, the finline-to-microstrip converter further includes a rectangular groove formed at one end of the first dielectric substrate away from the narrow microstrip line.

[0011] According to some exemplary embodiments, the first dielectric substrate and the second dielectric substrate are respectively provided with grooves that match the shapes of the bow-shaped metal sheet, the first fin transition layer, the second fin transition layer, the narrow microstrip line and the wide microstrip line, and the depth of each of the grooves is the same as the thickness of the corresponding bow-shaped metal sheet, the first fin transition layer, the second fin transition layer, the narrow microstrip line or the wide microstrip line.

[0012] According to some exemplary embodiments, an extension plate is provided on both sides of the first dielectric substrate and the second dielectric substrate, and a plurality of vias are uniformly provided on the extension plate. The vias are configured to suppress resonance on both sides of the double-ridge fin line conversion section and the microstrip line transmission section. The surface of the extension plate and the inner surface of the vias are both metallized.

[0013] According to another aspect of this disclosure, a waveguide-fin-microstrip conversion system is provided, including the fin-microstrip converter as described above.

[0014] According to some exemplary embodiments, the waveguide-fin-microstrip conversion system further includes: a waveguide, including a waveguide upper body and a waveguide lower body; wherein the fin-microstrip converter is disposed between the waveguide upper body and the waveguide lower body, the waveguide is configured to transmit electromagnetic waves from the front-end device to the dual-ridge fin-transformer section, after the dual-ridge fin-transformer section converts the electromagnetic waves from a first mode to a second mode, the electromagnetic waves are transmitted in the second mode to the microstrip transmission section and output by the microstrip transmission section.

[0015] According to some exemplary embodiments, the waveguide-fin-microstrip conversion system further includes: a transition cavity connected to one end of the waveguide near the microstrip line, wherein the microstrip line transmission segment extends from the waveguide to the bottom of the transition cavity.

[0016] According to some exemplary embodiments, the height ratio of the transition cavity to the waveguide is 1:2.

[0017] According to some exemplary embodiments, the waveguide-fin-microstrip conversion system further includes: a microstrip air cavity connected to the aforementioned transition cavity, wherein the microstrip line transmission segment extends from the waveguide to the bottom of the transition cavity into the microstrip air cavity, and the microstrip line transmission segment transmits a second-mode electromagnetic field signal to a subsequent device based on the microstrip air cavity.

[0018] According to embodiments of this disclosure, by setting a double-ridge fin line conversion segment, electromagnetic waves can be converted from a first mode to a second mode, and the second-mode electromagnetic waves are transmitted to a microstrip line transmission segment. By setting the curvature center of the arc-shaped metal sheet outside the orthographic projection range of the double-ridge fin line conversion segment, an arc-shaped metal sheet with a larger curvature can be set, allowing for a smooth transition between the first and second fin line transition layers on the same side as the arc-shaped metal sheet. This suppresses resonance during the conversion of electromagnetic waves from the first mode to the second mode and expands the bandwidth of the fin-to-microstrip converter. The fin-to-microstrip converter of this disclosure is easy to manufacture, highly reliable, and low in cost, reducing the complexity of millimeter-wave systems. Attached Figure Description

[0019] Figure 1 This is a frontal projection view of a fin-to-microstrip converter according to an illustrative embodiment of the present invention;

[0020] Figure 2 This is a top view of a fin-to-microstrip converter according to an illustrative embodiment of the present invention;

[0021] Figure 3 This is a bottom view of a fin-to-microstrip converter according to an illustrative embodiment of the present invention;

[0022] Figure 4 This is a top view of a first dielectric substrate and a second dielectric substrate according to an illustrative embodiment of the present invention;

[0023] Figure 5 This is a bottom view of a first dielectric substrate and a second dielectric substrate according to an illustrative embodiment of the present invention;

[0024] Figure 6 This is a perspective view of a waveguide-fin-microstrip conversion system according to an illustrative embodiment of the present invention;

[0025] Figure 7 This is a front view of a waveguide-fin-microstrip conversion system according to an illustrative embodiment of the present invention; and

[0026] Figure 8The diagram shows the simulation results of a waveguide-fin wire-microstrip conversion system according to an illustrative embodiment of the present invention.

[0027] Explanation of reference numerals in the attached figures

[0028] 100: Fin-to-microstrip converter;

[0029] 110: Double fin line transition segment;

[0030] 111: First dielectric substrate;

[0031] 112: First fin transition layer;

[0032] 113: Second fin transition layer;

[0033] 120: Microstrip line transmission segment;

[0034] 121: Second dielectric substrate;

[0035] 122: Narrow microstrip line;

[0036] 123: Wide microstrip line;

[0037] 130: Bow-shaped metal sheet;

[0038] 140: Rectangular groove;

[0039] 150: Groove;

[0040] 160: Extension plate;

[0041] 170: Via;

[0042] 200: Waveguide;

[0043] 300: Transition cavity;

[0044] 400: Micro-strip air cavity;

[0045] S11: Return loss;

[0046] S12: Insertion loss. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete, and to fully convey the scope of the invention to those skilled in the art. In the accompanying drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated, and the same reference numerals denote the same elements throughout.

[0048] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the invention. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the invention for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0049] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The terms "comprising," "including," etc., as used herein indicate the presence of the above-described features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0050] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0051] To facilitate understanding of the technical solutions of this invention by those skilled in the art, the following technical terms are explained below.

[0052] When using expressions such as "at least one of A, B, and C," the expression should generally be interpreted in accordance with the meaning commonly understood by a person skilled in the art (e.g., "a system having at least one of A, B, and C" should include, but is not limited to, systems having A alone, having B alone, having C alone, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.). Similarly, when using expressions such as "at least one of A, B, or C," the expression should generally be interpreted in accordance with the meaning commonly understood by a person skilled in the art (e.g., "a system having at least one of A, B, or C" should include, but is not limited to, systems having A alone, having B alone, having C alone, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0053] Some exemplary embodiments of this disclosure provide a fin-to-microstrip converter. The fin-to-microstrip converter includes a double-ridge fin-to-transform segment, a microstrip line transmission segment, and an arc-shaped metal strip. The double-ridge fin-to-transform segment is configured to receive electromagnetic waves and convert the electromagnetic waves from a first mode to a second mode. The double-ridge fin-to-transform segment includes a first dielectric substrate, a first fin-to-transform layer, and a second fin-to-transform layer. The microstrip line transmission segment includes a narrow microstrip line. The first fin-to-transform layer is disposed on the first dielectric substrate and is parallel to the propagation direction of the electromagnetic waves. The second fin-to-transform layer is disposed on the side of the first dielectric substrate opposite to the first fin-to-transform layer and is parallel to the propagation direction of the electromagnetic waves. The narrow microstrip line is connected to the first fin-to-transform layer, and the direction from the first fin-to-transform layer to the narrow microstrip line is the same as the propagation direction of the electromagnetic waves. The arc-shaped metal strip is disposed on the same side of the first dielectric substrate as the first fin-to-transform layer, and the center of curvature of the arc-shaped metal strip is outside the orthographic projection range of the double-ridge fin-to-transform segment.

[0054] By setting a double-ridge fin line conversion segment, electromagnetic waves can be converted from the first mode to the second mode, and the electromagnetic waves in the second mode can be transmitted to the microstrip line transmission segment. By setting the curvature center of the arc-shaped metal sheet outside the orthographic projection range of the double-ridge fin line conversion segment, an arc-shaped metal sheet with a large curvature can be set, which can make the first fin line transition layer and the second fin line transition layer on the same side as the arc-shaped metal sheet transition smoothly. In this way, the generation of resonance can be suppressed during the process of electromagnetic waves converting from the first mode to the second mode, and the bandwidth of the fin line to microstrip converter can be extended.

[0055] Figure 1 This is a frontal projection view of a finline-to-microstrip converter according to an illustrative embodiment of the present invention.

[0056] Figure 2 This is a top view of a fin-to-microstrip converter according to an illustrative embodiment of the present invention. Figure 3 This is a bottom view of a fin-to-microstrip converter according to an illustrative embodiment of the present invention.

[0057] like Figures 1 to 3 Some exemplary embodiments of this disclosure provide a fin-to-microstrip converter 100. The fin-to-microstrip converter 100 may include a bi-ridge fin-to-transform segment 110, a microstrip transmission segment 120, and an arc-shaped metal strip 130.

[0058] Specifically, the dual-ridge fin line conversion segment 110 can be configured to receive electromagnetic waves and convert them from a first mode to a second mode. For example, the first mode conversion can be TE10 mode, and the second mode can be TEM mode. The dual-ridge fin line conversion segment 110 can convert electromagnetic waves in TE10 mode to TEM mode for transmission to the microstrip line transmission segment 120. Correspondingly, the first mode conversion can be TEM mode, and the second mode can be TE10 mode. The dual-ridge fin line conversion segment 110 can convert electromagnetic waves in TEM mode from the microstrip line transmission segment 120 to TE10 mode. The dual-ridge fin line conversion segment 110 may include a first dielectric substrate 111, a first fin line transition layer 112, and a second fin line transition layer 113.

[0059] A first fin transition layer 112 can be disposed on a first dielectric substrate 111, and the orientation of the first fin transition layer 112 can be parallel to the transmission direction of the electromagnetic wave. A second fin transition layer 113 can be disposed on the side of the first dielectric substrate 111 opposite to the first fin transition layer 112, and the orientation of the second fin transition layer 113 can be parallel to the transmission direction of the electromagnetic wave. The first fin transition layer 112 and the second fin transition layer 113 can be disposed opposite to each other on both sides of the first dielectric substrate 111 (e.g., perpendicular to the direction of electromagnetic wave transmission). Figure 2 Inward and perpendicular to Figure 2 (Outward direction). Electromagnetic waves can be transmitted through the first fin transition layer 112 and the second fin transition layer 113, and can be converted from the first mode to the second mode.

[0060] The microstrip line transmission segment 120 may include a narrow microstrip line 122. The narrow microstrip line 122 may be connected to a first fin transition layer 112, and the direction from the first fin transition layer 112 to the narrow microstrip line 122 may be the same as the direction of electromagnetic wave propagation. Electromagnetic waves can be transmitted from the first fin transition layer 112 to the narrow microstrip line 122, and electromagnetic waves can also be transmitted from the double-ridge fin transformation segment 110 to the microstrip line transmission segment 120. The double-ridge fin transformation segment 110 can convert the electromagnetic wave of the first mode into a second mode and transmit the converted second-mode electromagnetic wave to the microstrip line transmission segment 120.

[0061] like Figure 1 and Figure 2 As shown, the arc-shaped metal sheet 130 can be disposed on the same side of the first dielectric substrate 111 as the first fin transition layer 112 (e.g., Figure 1 or Figure 2 (Right side of the microstrip transmission section 120), and the center of curvature of the arc-shaped metal sheet 130 can be set outside the orthographic projection range of the double-ridge fin transformation section 110, and the orthographic projection direction can be perpendicular to... Figure 2The direction. By setting the curvature center of the arc-shaped metal sheet 130 outside the orthogonal projection range of the double-ridge fin line transformation segment 110, the first fin line transition layer 112 and the second fin line transition layer 113 belonging to the same side as the arc-shaped metal sheet 130 can be smoothly transitioned, thereby suppressing the generation of resonance and expanding the bandwidth of the fin line-microstrip converter 100.

[0062] According to embodiments of this disclosure, by setting a double-ridge fin-to-microstrip converter segment 110, electromagnetic waves can be converted from a first mode to a second mode, and the electromagnetic waves of the second mode are transmitted to the microstrip transmission segment 120. By setting the curvature center of the arc-shaped metal sheet 130 outside the orthographic projection range of the double-ridge fin-to-microstrip converter segment 110, an arc-shaped metal sheet 130 with a larger curvature can be set, allowing a smooth transition between the first fin transition layer 112 and the second fin transition layer 113 on the same side as the arc-shaped metal sheet 130. This can suppress the generation of resonance during the conversion of electromagnetic waves from the first mode to the second mode and expand the bandwidth of the fin-to-microstrip converter 100. The fin-to-microstrip converter 100 of this disclosure is easy to manufacture, highly reliable, and low in cost, which can reduce the complexity of millimeter-wave systems.

[0063] like Figures 1 to 3 As shown, according to the embodiments of this disclosure, the straight edge of the arc-shaped metal sheet 130 can be collinear with the bottom edge of the first fin transition layer 112, and the orthographic projection of the arc-shaped metal sheet 130 on the first dielectric substrate 11 can be outside the orthographic projection range of the first fin transition layer 112 and the second fin transition layer 113 on the first dielectric substrate 111. The orthographic projection direction can be perpendicular to... Figure 2 In other words, the arc-shaped metal sheet 130 may not overlap with the first fin transition layer 112 and the second fin transition layer 113. The arc-shaped metal sheet 130 and the first fin transition layer 112 and the second fin transition layer 113 are perpendicular to the direction of the arc. Figure 2 There is a certain distance between the directions. By aligning the straight edge of the arc-shaped metal sheet 130 with the bottom edge of the first fin transition layer 112 on the same straight line, the smoothness and integrity of the fin-microstrip converter 100 can be further improved, the generation of resonance can be suppressed, and the bandwidth of the fin-microstrip converter 100 can be extended.

[0064] According to embodiments of this disclosure, such as Figure 1 and Figure 2 As shown, the radius of curvature R1 of the arc-shaped metal sheet 130 can be 0.8 to 1.2 times the width W1 of the double-ridge fin transition segment 110. By setting the radius of curvature of the arc-shaped metal sheet 130 to 0.8 to 1.2 times that of the double-ridge fin transition segment 110, the first fin transition layer 112 and the second fin transition layer 113 can achieve better smoothness, significantly improving the effect of suppressing resonance, and can suppress resonance at 70-80 GHz.

[0065] According to embodiments of this disclosure, such as Figure 1 As shown, the spacing L1 between the arc-shaped metal sheet 130 and the first fin transition layer 112 can be 0.1 mm to 0.2 mm. By setting the spacing L1 between the arc-shaped metal sheet 130 and the first fin transition layer 112 to be 0.1 mm to 0.2 mm, the spacing between the arc-shaped metal sheet 130 and the first fin transition layer 112 and the second fin transition layer 113 can be equal. This can not affect the accuracy of the double-ridge fin transition segment 110 in converting electromagnetic waves from the first mode to the second mode, and can also significantly suppress the generation of resonance. This can make the first fin transition layer 112 and the second fin transition layer 113 achieve better smoothness, thereby extending the bandwidth to 70-110 GHz.

[0066] Preferably, the spacing L1 between the arc-shaped metal sheet 130 and the first fin transition layer 112 and the second fin transition layer 113 can be set to 0.14 mm. When the spacing L1 between the arc-shaped metal sheet 130 and the first fin transition layer 112 and the second fin transition layer 113 is set to 0.14 mm, the effect of suppressing resonance is optimal, and the bandwidth can be extended by 20-40%.

[0067] According to an embodiment of this disclosure, the microstrip line transmission segment 120 may further include a second dielectric substrate 121 and a wide microstrip line 123. The narrow microstrip line 122 and the wide microstrip line 123 may be disposed opposite to each other on two sides of the second dielectric substrate 121 (e.g., perpendicular to...). Figure 2 Inward and perpendicular to Figure 2 (Outward direction) The orientation of the narrow microstrip line 122 and the wide microstrip line 123 can be parallel to the direction of electromagnetic wave propagation. After the electromagnetic wave, converted to the second mode by the double-ridged fin line conversion section 110, reaches the microstrip line transmission section 120, it can be transmitted to the subsequent device via the narrow microstrip line 122 and the wide microstrip line 123. The length of the narrow microstrip line 122 can be the same as the length of the wide microstrip line 123, the width of the narrow microstrip line 122 can be smaller than the width of the wide microstrip line 123, and the width of the wide microstrip line 123 can be the same as the width of the double-ridged fin line conversion section 110.

[0068] like Figures 1 to 3 As shown, according to an embodiment of this disclosure, the fin-to-microstrip converter 100 may further include a rectangular slot 140. The rectangular slot 140 may be formed at one end of the first dielectric substrate 111, away from the narrow microstrip line 122 and close to the double-ridge fin-to-microstrip conversion segment 110 (e.g., ...). Figure 2 or Figure 3(Right end of the mid-fin line-to-microstrip converter 100). By setting the rectangular slot 140, the continuity between external devices and the dual-ridge fin line converter segment 110 can be improved, the structure of the dual-ridge fin line converter segment 110 can be changed, the transition performance of the dual-ridge fin line converter segment 110 can be improved, and the transmission loss of the first dielectric substrate 111 and the second dielectric substrate 121 and the insertion loss of the dual-ridge fin line converter segment 110 can be reduced.

[0069] Figure 4 This is a top view of a first dielectric substrate and a second dielectric substrate according to an illustrative embodiment of the present invention. Figure 5 This is a bottom view of the first dielectric substrate and the second dielectric substrate according to an illustrative embodiment of the present invention.

[0070] like Figures 1 to 5 As shown, according to the embodiments of this disclosure, grooves 150 matching the shapes of the first fin transition layer 112, the second fin transition layer 113, the narrow microstrip line 122, or the wide microstrip line 123 can be respectively formed on the first dielectric substrate 111 and the second dielectric substrate 121. The depth of each groove 150 can be the same as the thickness of the corresponding arc-shaped metal sheet 130, the first fin transition layer 112, the second fin transition layer 113, the narrow microstrip line 122, or the wide microstrip line 123. After the arc-shaped metal sheet 130, the first fin transition layer 112, the second fin transition layer 113, the narrow microstrip line 122, and the wide microstrip line 123 are embedded in the first dielectric substrate 111 and the second dielectric substrate 121, the outer surfaces of the arc-shaped metal sheet 130, the first fin transition layer 112, the narrow microstrip line 122, the first dielectric substrate 111, and the second dielectric substrate 121 (e.g., ...) are... Figure 2 The surfaces shown can be on the same horizontal plane, and the outer surfaces of the second fin transition layer 113, the wide microstrip line 123, the first dielectric substrate 111, and the second dielectric substrate 121 (e.g., ...) Figure 3The surfaces shown can be on the same horizontal plane. When fabricating the fin-to-microstrip converter 100, a first dielectric substrate 111 and a second dielectric substrate 121 with grooves 150 can be fabricated first. The first dielectric substrate 111 and the second dielectric substrate 121 can be integrally formed. Then, a first fin transition layer 112, a second fin transition layer 113, a narrow microstrip line 122, and a wide microstrip line 123 are fabricated. After the arc-shaped metal sheet 130, the first fin transition layer 112, the second fin transition layer 113, the narrow microstrip line 122, and the wide microstrip line 123 are respectively mounted on the first dielectric substrate 111 and the second dielectric substrate 121, the arc-shaped metal sheet 130 can be mounted on the first dielectric substrate 111. The first fin transition layer 112 and the narrow microstrip line 122 can be integrally formed, and the second fin transition layer 113 and the wide microstrip line 123 can be integrally formed. The first dielectric substrate 111 and the second dielectric substrate 121 can be selected as thick high-frequency laminates with low dielectric constant and low loss, such as 0.127mm thick RT / Duriod5880 dielectric substrate.

[0071] like Figures 1 to 3 As shown in the embodiment of this disclosure, extension plates 160 can be provided on both sides of the first dielectric substrate 111 and the second dielectric substrate 121. A plurality of vias 170 can be uniformly provided on the extension plates 160. The vias 170 can be configured to suppress resonance on both sides of the dual-ridge fin transition section 110 and the microstrip line transmission section 120. Both the surface of the extension plates 160 and the inner surface of the vias 170 can be over-metallized. When the finline-to-microstrip converter 100 is used in conjunction with other devices, to improve the mounting performance of the finline-to-microstrip converter 100, an extension plate 160 can be provided to extend into the interior of the combined devices to improve the mounting stability of the finline-to-microstrip converter 100. However, since the extension plate 160 is provided on both sides of the double-ridge finline conversion section 110 and the microstrip transmission section 120, resonance is easily generated on both sides of the double-ridge finline conversion section 110 and the microstrip transmission section 120. By providing vias 170 on the extension plate 160 and over-metallizing the surface of the extension plate 160 and the inner side of the vias 170, the resonance on both sides of the double-ridge finline conversion section 110 and the microstrip transmission section 120 can be avoided, thus ensuring the performance of the first finline transition layer 112 and the second finline transition layer 113. The width of the extension plate 160 can be set to 0.5 mm.

[0072] Figure 6 This is a perspective view of a waveguide-fin-microstrip conversion system according to an illustrative embodiment of the present invention. Figure 7 This is a front view of a waveguide-fin-microstrip conversion system according to an illustrative embodiment of the present invention. Some exemplary embodiments of this disclosure also provide a waveguide-fin-microstrip conversion system, including the fin-microstrip converter 100 as described above.

[0073] like Figures 6 to 7 As shown in the embodiments of this disclosure, the waveguide-fin-microstrip conversion system may further include a waveguide 200. The waveguide 200 may include an upper waveguide body and a lower waveguide body.

[0074] The fin-to-microstrip converter 100 can be tightly integrated with the waveguide upper and lower bodies and positioned between them. The waveguide 200 can be configured to transmit electromagnetic waves from the pre-amplifier to the dual-ridge fin-to-microstrip converter section 110. After the dual-ridge fin-to-microstrip converter section 110 converts the electromagnetic waves from a first mode to a second mode, the electromagnetic waves are transmitted in the second mode to the microstrip transmission section 120 and output from the microstrip transmission section 120. An extension plate 160 can extend outward from between the waveguide upper and lower bodies into the interior of the integrated device to improve the stability of the fin-to-microstrip converter 100 installation. By over-metallizing the surface of the extension plate 160 and the inner surface of the vias 170, resonance between the extension plate 160 and the waveguide upper and lower bodies can be avoided, improving the reliability of the waveguide-fin-to-microstrip conversion system. The width of the dual-ridge fin-to-microstrip converter section 110 can be the same as the width of the waveguide 200.

[0075] The curved edge L of the first fin transition layer 112 and the second fin transition layer 113 i It can be represented as:

[0076]

[0077] like Figures 1 to 6 As shown, b can represent the size of the narrower side of waveguide 200, w2 can represent the linewidth of the narrow microstrip line (a 50Ω microstrip line can be selected), L can represent the length of the double-ridge fin transition segment 110, X(t) can represent the width of the first fin transition layer 112 or the second fin transition layer 113, and t is the curve edge L of the first fin transition layer 112 or the second fin transition layer 113. i The corresponding vertical axis is the curve edge L of the first fin transition layer 112 or the second fin transition layer 113. i The corresponding ordinate can be found in, for example... Figures 1 to 3 The coordinate system shown is in which a fixed origin O is used as the origin, the X-axis is the horizontal coordinate, and the Y-axis is the vertical coordinate.

[0078] According to embodiments of this disclosure, the waveguide-fin-microstrip conversion system may further include a transition cavity 300. The transition cavity 300 may be connected to one end of the waveguide 200 near the microstrip line, and the microstrip line transmission segment 120 may extend from the waveguide 200 towards the bottom of the transition cavity 300. By providing the transition cavity 300, the microstrip line transmission segment 120 can transmit electromagnetic waves of the second mode to subsequent devices, avoiding direct transmission of electromagnetic waves of the first mode through the semiconductor to subsequent devices.

[0079] According to embodiments of this disclosure, the height ratio of the transition cavity 300 to the waveguide 200 can be 1:2, which can restrict the electromagnetic waves of the first mode from being directly transmitted through the semiconductor to subsequent devices. For example, if the waveguide 200 is a cube with a length of 1 mm and a height of 1 mm, the transition cavity 300 can be set as a cuboid with a length of 1 mm and a height of 0.5 mm.

[0080] According to embodiments of this disclosure, the waveguide-fin-microstrip conversion system may further include a microstrip air cavity 400. The microstrip air cavity 400 may be connected to the transition cavity 300, and the microstrip line transmission segment 120 may extend from the waveguide 200 to the bottom of the transition cavity 300 into the microstrip air cavity 400. The microstrip line transmission segment 120 may transmit the second-mode electromagnetic field signal to the subsequent device based on the microstrip air cavity 400.

[0081] Figure 8 The diagram shows the simulation results of a waveguide-fin wire-microstrip conversion system according to an illustrative embodiment of the present invention.

[0082] like Figure 8 As shown, the waveguide-fin-microstrip conversion system can cover waves with frequencies between 75 and 110 GHz, has a wide bandwidth, and has a large return loss S11 and a small insertion loss S12. Therefore, the waveguide-fin-microstrip conversion system has low reflection power and good matching.

[0083] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings and are not intended to limit the scope of protection of the present invention. Throughout the accompanying drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding the present invention, and the shapes and dimensions of the components in the drawings do not reflect actual size and proportion, but are only schematic representations of the embodiments of the present invention.

[0084] Unless otherwise stated, the numerical parameters in this specification and the appended claims are approximate values ​​and can be varied according to the desired characteristics obtained from the content of this invention. Specifically, all figures used in the specification and claims to indicate the content of components, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. Generally, this means that there may be variations of ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments.

[0085] The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify the corresponding elements does not imply that the element has any ordinal number, nor does it represent the order of one element with another element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a named element to be clearly distinguished from another element with the same name.

[0086] The above specific embodiments further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A fin-to-microstrip converter, comprising: A dual-vertebral fin line conversion segment is configured to receive electromagnetic waves and convert the electromagnetic waves from a first mode to a second mode. The dual-vertebral fin line conversion segment includes: First dielectric substrate; A first fin transition layer is disposed on the first dielectric substrate and is parallel to the transmission direction of the electromagnetic wave; The second fin transition layer is disposed on the side of the first dielectric substrate opposite to the first fin transition layer and is parallel to the transmission direction of the electromagnetic wave. Microstrip line transmission segments include: A narrow microstrip line is connected to the first fin transition layer, and the direction from the first fin transition layer to the narrow microstrip line is the same as the direction of electromagnetic wave transmission. Second dielectric substrate; Wide microstrip line, the narrow microstrip line and the wide microstrip line are disposed opposite to each other on two sides of the second dielectric substrate; An arc-shaped metal sheet is disposed on the same side of the first fin transition layer on the first dielectric substrate, and the center of curvature of the arc-shaped metal sheet is outside the orthogonal projection range of the double fin transformation segment, and the radius of curvature of the arc-shaped metal sheet is 0.8 to 1.2 times the width of the double fin transformation segment. The first dielectric substrate and the second dielectric substrate are respectively provided with grooves that match the shapes of the bow-shaped metal sheet, the first fin transition layer, the second fin transition layer, the narrow microstrip line and the wide microstrip line, and the depth of each groove is the same as the thickness of the corresponding bow-shaped metal sheet, the first fin transition layer, the second fin transition layer, the narrow microstrip line or the wide microstrip line.

2. The fin-to-microstrip converter according to claim 1, characterized in that, The straight edge of the arc-shaped metal sheet is on the same straight line as the bottom edge of the first fin transition layer, and the orthographic projection of the arc-shaped metal sheet on the first dielectric substrate is outside the orthographic projection range of the first fin transition layer and the second fin transition layer on the first dielectric substrate.

3. The fin-to-microstrip converter according to claim 1 or 2, characterized in that, The distance between the arc-shaped metal sheet and the first fin transition layer is 0.1 mm to 0.2 mm.

4. The fin-to-microstrip converter according to claim 1, characterized in that, The narrow microstrip line has the same length as the wide microstrip line, the narrow microstrip line has a smaller width than the wide microstrip line, and the wide microstrip line has the same width as the double-ridge fin line transformation segment.

5. The fin-to-microstrip converter according to claim 1, characterized in that, Also includes: A rectangular groove is formed at the end of the first dielectric substrate away from the narrow microstrip line.

6. The fin-to-microstrip converter according to claim 1, characterized in that, An extension plate is provided on both sides of the first dielectric substrate and the second dielectric substrate. A plurality of vias are uniformly provided on the extension plate. The vias are configured to suppress resonance on both sides of the double-ridge fin line conversion section and the microstrip line transmission section. The surface of the extension plate and the inner surface of the vias are both metallized.

7. A waveguide-fin-microstrip conversion system, characterized in that, Includes the fin-to-microstrip converter as described in any one of claims 1 to 6.

8. The waveguide-fin-microstrip conversion system according to claim 7, characterized in that, Also includes: A waveguide consists of a waveguide upper body and a waveguide lower body; The fin-to-microstrip converter is disposed between the upper waveguide body and the lower waveguide body. The waveguide is configured to transmit electromagnetic waves from the front-end device to the dual-ridge fin-to-transformer section. After the electromagnetic waves are converted from a first mode to a second mode in the dual-ridge fin-to-transformer section, the electromagnetic waves are transmitted to the microstrip transmission section in the second mode and output by the microstrip transmission section.

9. The waveguide-fin-microstrip conversion system according to claim 8, characterized in that, Also includes: A transition cavity is connected to one end of the waveguide near the microstrip line, and the microstrip line transmission segment extends from the waveguide to the bottom of the transition cavity.

10. The waveguide-fin-microstrip conversion system according to claim 9, characterized in that, The height ratio of the transition cavity to the waveguide is 1:

2.

11. The waveguide-fin-microstrip conversion system according to claim 9, characterized in that, Also includes: A microstrip air cavity is connected to the transition cavity. The microstrip line transmission segment extends from the waveguide to the bottom of the transition cavity into the microstrip air cavity. The microstrip line transmission segment transmits the second mode electromagnetic field signal to the subsequent device based on the microstrip air cavity.

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