A GaAs-based high-power conical laser chip with high power and high beam quality and a preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Shandong Huaguang Optoelectronics Co. Ltd.
- Filing Date
- 2022-02-23
- Publication Date
- 2026-06-05
AI Technical Summary
Existing conical semiconductor lasers suffer from unstable beam quality at high power, easily exhibiting filamentary emission. Furthermore, traditional improvement methods are costly, have poor heat dissipation, and are difficult to encapsulate and couple, thus failing to effectively improve beam quality and output power.
By employing a wide stripe region with microstructures at the edges and a ridge form in the magnification region, mode selection is achieved through edge filtering, and side light limitation is performed by combining material refractive index differences to avoid mode width cutoff, thus achieving a combination of high power and high beam quality.
It significantly improves output power, reduces horizontal divergence angle, extends chip lifespan, and enhances laser reliability and beam quality.
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Figure CN116683284B_ABST