Magnetostatic sensing, focusing and steering of electron beams in vacuum electron devices

Abstract

Vacuum electron devices (VEDs) are produced with multiple two-dimensional layers of various materials that are bonded together to simultaneously form one or more VEDs. The two-dimensional material layers are machined to include features required for device operation such that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, etc. The manufacturing method is capable of incorporating metal, magnetic, and ceramic materials required for VED fabrication while maintaining the required positional accuracy and ability to produce multiple devices per batch. The VEDs produced in this manner include a combination of magnetic and electrostatic lenses for electron beam control.

Description

[0001] Statement regarding relevant applications and priority claims

[0002] This application claims priority based on the following: (1) U.S. Provisional Patent Application Serial No. 63 / 198,817 entitled “Multil-ayered multi-material manufacturing process for vacuum electronic devices”, filed on November 15, 2020, in the name of inventor Diana Gamzina Daugherty and generally possessed thereon, the contents of which are hereby incorporated by reference as fully set forth herein; and (2) U.S. Provisional Patent Application Serial No. 63 / 198,915 entitled “Electronic magneto-electrostatic sensing, focusing, and steering of electron beams in microwave, millimeter wave, and near-terahertz vacuum electronic devices”, filed on November 21, 2020, in the name of inventor Diana Gamzina Daugherty and generally possessed thereon, the contents of which are hereby incorporated by reference as fully set forth herein.

[0003] This application may be considered related to another patent application filed on the same date: U.S. Patent Application Serial No. 17 / 525,658, entitled "Multi-Layer Vacuum Electron Device and Method of Manufacture," filed in the name of inventor Diana Gamzina Daugherty and generally possessed thereto, which in turn claims priority to: (1) U.S. Provisional Patent Application Serial No. 63 / 198,817, entitled "Multi-layered multi-material manufacturing process for vacuum electronic devices," filed in the name of inventor Diana Gamzina Daugherty on November 15, 2020 and generally possessed thereto; and (2) U.S. Provisional Patent Application Serial No. 63 / 198,817, entitled "Electronic magneto-electrostatic sensing, focusing, and steering of electron beams in microwave, millimeter wave, and nearterahertz vacuum electronic," filed in the name of inventor Diana Gamzina Daugherty on November 21, 2020 and generally possessed thereto. The contents of U.S. Provisional Patent Application Serial No. 63 / 198,915, concerning “devices”, are hereby incorporated by reference, as if fully set forth herein. Technical Field

[0004] This disclosure generally relates to a method for manufacturing a vacuum electronic device (VED) having multiple two-dimensional layers of various materials, which are bonded together to simultaneously form one or more VEDs. The two-dimensional material layers are machined to include features required for device operation, such that when assembled and combined into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid-state bonding, cold welding, ultrasonic welding, etc. The manufacturing method can incorporate metallic, magnetic, and ceramic materials required for VED manufacturing while maintaining the required positional accuracy and the ability to produce multiple devices per batch. The VEDs thus produced include a combination of magnetic and electrostatic lenses for electron beam control. Background Technology

[0005] Vacuum electronic devices (VEDs) operate in a vacuum environment and utilize the interaction between one or more electron beams and an electromagnetic field generated in the interaction region of the VED. The construction of a VED requires incorporating metallic, ceramic, magnetic, and other materials into a single component, which can be maintained in or enclosed in a vacuum to ensure unimpeded electron transport from the cathode (electron emitter) to the collector (electron receiver) of the VED. The vacuum region, also known as a vacuum chamber, vacuum cavity, vacuum tunnel, or RF interaction region, is where the interaction between the electron beam(s) and electromagnetic waves(s) occurs. Examples of such VEDs in the prior art include (but are not limited to) particle accelerators, klystrons, gyroscopes, cyclotrons, cyclotron amplifiers, traveling wave tubes (TWTs), cyclotron TWTs, backward wave oscillators, inductively coupled output tubes (IOTSs), magnetrons, cross-field amplifiers, free-electron lasers, ubitrons, microwave masers, diodes, transistors, tetrodes, pentodes, etc. Some gas ion lasers, although they do not operate strictly in a vacuum but at very low pressures and typically lack an RF interaction region, operate in very similar ways.

[0006] The propagation of the electron beam through the electron beam tunnel of a VED is conventionally achieved by confining the electron beam within the tunnel using a magnetic or electrostatic field. The effect of space charge—the compression of negatively charged electrons into a narrow beam—prefers to cause the beam to disperse because electrons tend to repel each other due to their similar charges. Therefore, confinement techniques are necessary to keep the beam together for longer periods and distances, thereby extending its interaction with the RF signal in the interaction region and improving the efficiency and performance of the VED.

[0007] Permanent magnets, electromagnets, and periodic arrays of permanent magnets or electromagnets are often used to confine the beam within a beam tunnel. Two challenges arise when assembling a VED and preparing it for operation: (1) due to manufacturing and assembly variations, the beam tunnel, magnetic centerline, and beam injection location are often not perfectly aligned, especially in higher frequency devices; (2) the quality of the magnetic material is insufficient to ensure that the domains of individual magnets are co-aligned with the design target with the required precision, resulting in magnetic field inhomogeneity. Therefore, after the VED is manufactured, technicians typically expend considerable effort to adjust or trim the magnetic field around the VED to achieve optimal electron beam transport. This trimming is usually done manually by applying trimming magnets to the exterior of the VED structure using adhesives. This process provides limited guidance for transport optimization, often merely comparing beam transport to cathode current, with multiple locations where additional trimming magnets can be added to optimize VED performance. This process is lengthy and, depending on the complexity of the VED, can take anywhere from several hours to several weeks to complete. For this purpose, the periodic tangent magnet assembly for sheet electron beam VED has recently incorporated quadrupole alignment magnets, but they only provide a gradual acceleration of the alignment process and are still insufficient for the needs of near-THz devices.

[0008] Existing VEDs are generally manufactured by combining individual two-dimensional and three-dimensional sub-components into an assembly, attaching the assembly to a housing to provide structural support and a vacuum enclosure, and then performing conventional vacuum processing and sealing procedures to produce a functional VED. Depending on the complexity of the device, such procedures can take weeks or longer to complete a single device and require a significant amount of highly skilled manual labor and large cleanrooms to perform. Today, with the surge in demand for high-bandwidth wireless data communications from earth stations to satellites to cellular towers, as well as local Wi-Fi systems and ground-based backbone systems, there is a huge demand for a large number of such low-cost devices. Summary of the Invention

[0009] The subject matter described herein generally relates to the fabrication of vacuum electronic devices (VEDs) using parallel sheets of material, which are assembled into a stack and bonded together to form a three-dimensional VED. One advantage of this method is that multiple VEDs with the same structure can be fabricated simultaneously and, upon completion, can be easily separated for individual use, as is typically done in semiconductor device manufacturing, thus significantly reducing the manufacturing cost per device. The VEDs thus produced include a combination of magnetic and electrostatic lenses for electron beam control.

[0010] The foregoing review is an overview and therefore may contain simplifications, generalizations and omissions of details; therefore, those skilled in the art will understand that the review is merely illustrative and not intended to be limiting in any way. Attached Figure Description

[0011] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more exemplary embodiments and, together with the description of these exemplary embodiments, serve to illustrate the principles and implementation schemes of the invention.

[0012] In the attached diagram:

[0013] Figure 1 This is a right front perspective view of a VED according to one embodiment.

[0014] Figure 2 According to one implementation method Figure 1 A three-dimensional view of the left rear side of the VED.

[0015] Figure 3 According to one implementation method Figure 1 The right elevation view of the VED.

[0016] Figure 4 According to one implementation method Figure 1 A three-dimensional sectional view of the right anterior side of the VED.

[0017] Figure 5 According to one implementation method Figure 1 A three-dimensional sectional view of the right front side of the interior of the VED.

[0018] Figure 6 According to one implementation method Figure 1 A sectional view of a portion of the interior of the VED taken along line 6-6.

[0019] Figure 7 This is a right front perspective view of a VED cut from a component according to one embodiment.

[0020] Figure 8 This is a cross-sectional view of a portion of the interior of a VED according to one embodiment.

[0021] Figure 9 According to one implementation method Figure 8 A partial cross-section of the left front side of the VED interior.

[0022] Figure 10 This is a partial cross-sectional perspective view of the left front side of the interior of a VED according to one embodiment.

[0023] Figure 11 According to one implementation method Figure 10A partial cross-section of the left anterior stereoscopic view of the decomposed area 11 of the VED.

[0024] Figure 12A , Figure 12B , Figure 12C and Figure 12D This is a schematic diagram illustrating various control panels that can be used to provide beam steering and focusing functions according to one embodiment.

[0025] Figure 13 This is a flowchart illustrating a process or method for manufacturing a vacuum electronic device according to an embodiment of the present invention. Detailed Implementation

[0026] This document describes exemplary embodiments within the context of VEDs such as TWT. Those skilled in the art will recognize that the following description is merely illustrative and not intended to be limiting in any way. Other embodiments will readily conceive of by those skilled in the art upon receiving this disclosure. Implementations of the exemplary embodiments will now be described in detail with reference to the accompanying drawings. Throughout the drawings and the following description, the same reference numerals will be used wherever possible to refer to the same or similar items.

[0027] For clarity, not all conventional features of the embodiments described herein are shown or described. It should be understood, of course, that in the development of any such practical embodiment, many implementation-specific decisions must be made to achieve the developer's specific objectives, such as compliance with application-related and business-related constraints, and these specific objectives will vary depending on the implementation and the developer. Furthermore, it should be understood that such development efforts may be complex and time-consuming, but this remains conventional engineering practice for those skilled in the art who benefit from this disclosure.

[0028] References to "one implementation," "an embodiment," "an implementation scheme," or "an implementation scheme" in this document refer to specific features, structures, parts, functions, or characteristics described in connection with exemplary embodiments that may be included in at least one exemplary embodiment. Phrases such as "in one embodiment" or "in one implementation scheme" appearing in different places in this specification do not necessarily refer to the same implementation or scheme, nor are they necessarily separate and alternative implementations that are mutually exclusive with other implementations.

[0029] According to this disclosure, various techniques can be used to implement the components and method steps described herein without departing from the scope and spirit of the inventive concept described herein.

[0030] The description herein includes examples of embodiments of the invention. It is certainly impossible to describe every conceivable combination of components or methods in order to describe the claimed subject matter, but it should be understood that many further combinations and arrangements of the invention are possible. Therefore, the claimed subject matter is intended to cover all such changes, modifications, and variations falling within the spirit and scope of the appended claims. Furthermore, the above description of the illustrated embodiments disclosed herein, including those described in the abstract, is not intended to be exhaustive or to limit the disclosed embodiments to the precise forms disclosed. Although specific embodiments, examples, and implementations have been described herein for illustrative purposes, those skilled in the art will recognize that various modifications are possible within the scope of such embodiments and examples.

[0031] Specifically, and with regard to the various functions performed by the aforementioned components, devices, systems, etc., unless otherwise indicated, the terminology used to describe such components is intended to correspond to any component (e.g., a functional equivalent) that performs the specified function of said component, even if it is not structurally equivalent to the disclosed structure that performs the function of the exemplary aspects of the claimed subject matter shown herein.

[0032] Furthermore, while a particular feature of the invention may be disclosed only with respect to one of several embodiments, such feature may be combined with one or more other features in other embodiments, which may be desirable and advantageous for any given or particular application. Moreover, with regard to the terms “comprising,” “including,” “having,” “containing,” and variations thereof, as well as other similar words, used in the detailed description or claims, these terms are intended to be included in a manner similar to the term “comprising” as an open transition word, without excluding any additional or other elements.

[0033] Furthermore, the terms “example” or “exemplary” as used herein refer to those serving as examples, instances, or illustrations. Any aspect or design described herein as “exemplary” is not necessarily to be construed as preferred or superior to other aspects or designs. Rather, the use of the terms “example” or “exemplary” is intended to present the concept in a specific manner. As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” That is, unless otherwise specified or clear from the context, “X adopts A or B” is intended to mean any natural inclusive arrangement. That is, if X adopts A; X adopts B; or X adopts both A and B, then “X adopts A or B” is satisfied in any of the foregoing cases. In addition, the articles “a” and “an” used in this application and the appended claims should generally be interpreted as meaning “one or more” unless otherwise specified or clear from the context to refer to the singular form.

[0034] In the accompanying drawings, when illustration numbers or reference symbols are used in more than one drawing, they are intended to refer to the same or similar parts, components or steps, unless such intention is not expressly stated in this disclosure.

[0035] The apparatus and methods described herein can be used for VEDs utilizing pencil beams, sheet beams, rectangular beams, elliptical beams, hollow beams, distributed beams, and multiple beams.

[0036] Although most of the following description concerns constructing a VED in layers from below to above the electron beam, with the plates arranged parallel to the electron beam, it is also considered that such a device can be constructed orthogonally to the electron beam in a relatively direct manner, as taught herein. If desired, such a device can also be constructed at any angle to the electron beam, for example, in a distributed beam device.

[0037] While a major benefit of the present invention is that it allows multiple VEDs to be manufactured simultaneously in a batch and then cut into individual parts, manufacturing a single prototype device using the present invention has also proven to be more cost-effective than prior art.

[0038] Generally, magnets are used in VEDs to provide at least some electron beam shaping and aiming functionality. If the electron beam is not properly guided from the cathode to the anode, it may collide with other parts of the VED structure, causing damage and contamination of the vacuum region. The ability to incorporate various types of magnetic materials is beneficial for VED assembly. Halbach arrays or quadrupole arrays are often used to focus the electron beam, much like solenoids are deployed around the electron beam at a distance. Another major benefit of this invention is its ability to provide a higher intensity magnetic field at the electron beam for a given magnet (electromagnetic solenoid or fixed type), because this invention allows the magnet to be placed closer to the electron beam without placing them in the vacuum chamber. Since the magnetic field from the magnet decreases with the square of the distance from the magnet, the magnet can be placed closer and smaller with the invention. Magnetic steering can be performed using actual magnets and combinations of magnets with magnetically sensitive materials, which together with the magnets establish the desired magnetic field within the VED to properly steer the electron beam. Because magnetic materials and / or iron- and nickel-containing materials are not good electrical conductors, electromagnetic circuits are generally made of materials like copper (or tungsten for spiral devices), thus moving the focusing structure further away from the electron beam. Magnets and / or iron- and nickel-containing materials can be plated with highly conductive materials such as copper to mitigate this problem; however, this arrangement can introduce potential vacuum purity issues for the VED, as this material degrades over time within the VED.

[0039] Electrostatic focusing can also be used to provide certain electron beam shaping and aiming functions in a VED. The ability of this invention to introduce electrical conductors into a vacuum structure now allows for precise electrostatic focusing within the vacuum structure by applying a voltage across two or more plates positioned around the electron beam. Multiple sets of such plates can be used if required or demanded by the specific application.

[0040] The fabrication method described herein can be used to manufacture VEDs at various frequencies, but is particularly advantageous for VEDs operating between approximately 25 GHz and approximately 1 THz. Due to the small feature scale (in some cases, from micrometers to millimeters), fabricating such devices using conventional hand-operated assembly components is challenging.

[0041] The embodiments described herein generally relate to improved electron beam current sensing, electron beam focusing, and electron beam steering within a VED. Specifically, these embodiments demonstrate a novel mechanism for sensing and controlling electron beam propagation within a confined magnetic field by applying an electrostatic field to the electron beam in a near-range proximity using electrical conductors (electrodes). The electrodes can be used to sense in detail beam propagation and losses along the VED circuitry, and to apply potentials in the region surrounding the electron beam to either focus the beam (using electrostatic lenses—typically single potential elements) or to steering the beam (using electrostatic deflectors—typically two or four potential elements). A conventionally designed electronic control system can then sense the current from the sensors, thereby adjusting the potentials on the individual electrodes in a relatively straightforward manner to maximize the current through the electron beam and minimize the current entering the VED body, which is significantly less time-consuming than existing methods.

[0042] Now turn to the attached image. Figure 1 This is a right front perspective view of VED 100 according to one embodiment. Figure 1 The VED100 can be, for example, a banded TWT. According to one embodiment, Figure 1 The VED 100 can be manufactured from multiple stacked and bonded layers. These layers can be arranged in parallel such that they are parallel to the electron (ribbon) beam axis (one end of which is indicated by 102), or they can be arranged orthogonally to this axis, or at other angles if desired. Figure 1The internal structure includes repeating pattern elements 104, 106, 108, 110, and 112, where element 108 is a permanent magnet sandwiched between either element 106 or 110. Elements 106 and 110 can also be permanent magnets or can be formed from magnetic materials such as iron or nickel. Finishing the sandwich are elements 104 and 112, which are electrically insulated (e.g., alumina). Electrical signals such as control board bias signals (discussed in detail below) and / or RF input and output signals are transmitted at terminals 114, 116, 118, and 120. As shown, these terminals are insulated from the rest of the structure by insulators 122, 124, 126, and 128, and conductor insulators 130, 132, 134, and 136, respectively. A 4-pole (quadrupole) electrostatic steering / focusing assembly 138 is shown at the right end of VED 100. Component 138 includes four electrode terminals 140, 142, 144, and 146, which are insulated from the structure of VED 100 by insulators 149, 150, 152, and 154, respectively. Elements 156, 158, and 160, forming the outer body of VED 100, are formed of an electrical conductor such as copper. This electrostatic quadrupole focusing method is particularly useful for ribbon and pencil beam VEDs. Elements 162 and 164 are magnets that help to confine and focus the electron beam traveling along axis 102. A magnetic assembly or magnetic circuit of the VED is positioned between elements 156 and 160, which can be one or more of the following types: periodically tangential magnets, periodically permanent magnets, Wiggler magnets, Heilbeck magnets, solenoid magnets, permanent magnets, electromagnets, electro-permanent magnets, etc.

[0043] Figure 2 According to one implementation method Figure 1 Left rear perspective view of VED 100. Elements 166 and 168 are magnets that help to confine and focus the electron beam traveling along axis 102. Electrical signals such as control board bias signals (discussed in detail below) and / or RF input and output signals are transmitted at terminals 170, 172, 174, 176, 178, and 180. As shown, these terminals are insulated from the rest of the structure by conductive insulators 182, 184, 186, 188, 190, and 192, respectively.

[0044] Figure 3 According to one implementation method Figure 1 The right-side elevation view of VED 100 shows details of component 138. Electrical terminals 194 and 196, which are insulated from component 158 ​​by conductor insulators 198 and 200, are also shown here.

[0045] Figure 4 According to one implementation method Figure 1A partial cross-sectional perspective view of the right front side of VED 100. According to this embodiment, elements 156a and 160a are formed of insulating material, rather than... Figure 1 , Figure 2 and Figure 3 Components 156 and 160 are formed of conductive material. Component 158 ​​is... Figure 4 (and Figure 5 The diagram shows two parts, 158a and 158b. In the cross-sectional view, the electron ribbon tunnel 202 can be seen to be a coupled cavity structure.

[0046] Figure 5 According to one implementation method Figure 1 A partial sectional perspective view of the right front side of the interior of the VED 100.

[0047] Figure 6 According to one implementation method Figure 1 A cross-sectional view taken along line 6-6 of a portion of the interior of the VED 100. Electrical signals such as control board bias signals (discussed in more detail below) and / or RF input and output signals are transmitted at terminals 204, 206, 208, 210, 212, and 214. As shown, these terminals are insulated from the rest of the structure by insulators 216, 218, 220, 222, 224, and 226, respectively. Component 228 is an external conductive shield, while component 230 is a conductive part formed, for example, copper.

[0048] Figure 7 This is a right front perspective view of a VED 700 cut from component 702 according to one embodiment. According to this embodiment, the VED 700 includes a plurality of parallel material sheets 704, 706, 708, 710, 714, and 716, wherein at least 706, 708, 710, 712, and 714 comprise a conductive material such as copper, while 704 and 716 may be magnetic materials such as iron or nickel. Layers 702, 704, 706, 708, 710, 712, 714, and 716 are bonded together. An interaction region 718 includes layers 708, 710, and 712 and is where the electron beam of the VED 700 interacts with an RF signal. This RF signal can be introduced into the interaction region 718, for example, via conductor 720 and extracted via conductor 722. After manufacturing, component 702 is cut (e.g., laser cut or waterjet cut) to release individual parts such as VED 700, leaving gap 724.

[0049] Figure 8This is a cross-sectional view of a portion of the interior of a VED 800 according to one embodiment. The VED 800 may be formed from a bonding layer assembly that may be horizontal or orthogonal to the electron beam axis 802 of the device. An electron beam tunnel or interaction region is shown at 804. The VED 800 includes a set of repeating blocks 806, each including elements 808, 810, and 812. Elements 808 and 812 are permanent magnets used to help confine the electron beam (one or more) of the VED 800. Element 810 may be a permanent magnet of a magnetic material such as iron or nickel. Elements 814, 816, 818, 820, 822, and 824 are conductive elements through which the electron beam of the VED 800 travels. Insulators 826, 828, 830, 832, 834, 836, 838, 840, and 842 isolate the respective control plates 844, 846, 848, 850, and 852 from the conductive portions of the body of the VED 800. Control plates 854, 856, and 858 can be used, for example, to focus the electron beam by applying various electrical biases (DC voltages) to them. Control plate 860 includes three insulators 838, 840, and 842 and two conductive plates 850 and 852, and it can be used, for example, to apply two-axis electrostatic beam steering (one axis per plate) by applying various electrical biases (DC voltages) to plates 850 and 852—for example, one could be positive and one could be negative. Element 862 can be a permanent magnet of a magnetic material such as iron or nickel. Components 864, 866, 868, and 870 are conductive elements through which the electron beam of the VED 800 travels.

[0050] If it is necessary to "punch" or "pre-bunch" the electron beam to improve efficiency, a single-electrode electrostatic lens can be provided with a pulsed or modulated voltage signal instead of a continuous DC voltage signal.

[0051] Figure 9 According to one implementation method Figure 8 A partial cross-section of the left front side of the interior of the VED 800.

[0052] Figure 10 According to one implementation method Figure 8 A partial cross-section of the left front side of the interior of the VED 800.

[0053] Figure 11 According to one implementation method Figure 10 A partial section of the left frontal stereoscopic view of the decomposed area 11 inside VED 800.

[0054] Figure 12A , Figure 12B , Figure 12C and Figure 12D These are schematic diagrams illustrating various control boards or electrostatic lenses 1200, 1202, 1204, and 1206, which, according to one embodiment, can be used to provide beam sensing (current), steering (deflection), and focusing (biasing) functions. Beam focusing can be achieved, for example, by deploying a single voltage in a completely conductive plate around the electron beam. This is in Figure 12A As shown in the diagram, plate 1200 can be formed of a conductor such as copper or other materials suitable for vacuum. An electron beam passes through holes 1208 in plate 1200, and a voltage (positive or negative) is applied to terminals 1210. Negatively charged electrons will be slightly attracted or repelled by the charged plate 1200, which provides a focusing function.

[0055] Figure 12B A similar plate 1202 formed of an insulator such as aluminum oxide (Al2O3) is shown. As is known to those skilled in the art, aluminum oxide is readily brazed. Figure 12B In the example shown, two electrodes 1212 and 1214 (located at 12 o'clock and 6 o'clock) are formed (by electroplating, electrodeposition, or other equivalent methods). The electron beam can be slightly redirected or moved by applying a positive or negative voltage to one or both of electrodes 1212 and 1214. For example, one of electrodes 1212 and 1214 can be positively biased, while the other can be negatively biased. Alternatively, one of electrodes 1212 and 1214 can be omitted entirely, and a voltage can be applied only to the remaining electrode.

[0056] Figure 12C It shows the relationship with Figure 12B Similar to plate 1202, but plate 1204 is oriented at a different angle (here, 90 degrees off, at the 3 o'clock and 9 o'clock positions). If four-electrode control is required, plates 1202 and 1204 can be provided by adding electrodes 1216 and 1218 to plate 1204, stacking them close to each other but insulated.

[0057] Figure 12D The concept just described is shown, but implemented in a single plate with four electrodes 1220, 1222, 1224, and 1226. Note that more electrodes can be provided if needed, and different angular positions can be used. The net voltage on the electrodes provides a focusing effect, while the unbalanced voltage provides an electron beam deflection effect.

[0058] Figure 12A , Figure 12B , Figure 12C and Figure 12DA control panel is shown that can be used for electron beam sensing, focusing, and steering (and positive lateral acceleration / deceleration, if desired) according to one embodiment. For example, in Figure 8 These can be used in components 854, 856, 858, and 860. The VEDs mentioned in this paper are equipped with magnets to confine the electron beam within a beam tunneling region of the interaction zone. The magnets can be solenoid-type surrounding the VED, or, as shown in this paper, fixed-type incorporated into the VED structure to place them closer (and more effectively) to the electron beam. Without a certain confinement force, the electron beam will spread out like water flowing from a hose. Magnetic confinement is similar to the effect of a magnetic lens, constraining the beam along its path to keep it narrow and prevent it from directly impacting the structure of the VED—which would damage the VED and waste its energy.

[0059] The control plates are electrostatic lenses. Periodically deployed along the electron beam, these lenses steer and focus the beam and incorporate it around the beam's propagation path (they are hollow at the center to allow the beam to pass through), thereby applying an electric field along a fixed magnetic field. These control plates may have one or more electrical connections. They may be stacked close to each other. The electrostatic lenses may be integrated along the magnetic structure of the VED, occasionally interrupting it to allow the magnetic structure to be closer to the beam tunnel, achieving higher magnetic intensity at the beam axis.

[0060] Furthermore, incorporating electrostatic lenses at various locations along the electron beam tunnel allows for progressive measurements of electron beam loss along the electron beam tunnel and / or circuitry, thereby aiding in the identification of problem areas in magnetic components or electron beam alignment. The electrostatic lenses can be oriented to travel continuously along the electron beam tunnel at a certain axial position, they can be oriented around the electron beam, or they can be placed at certain discrete locations and fixed axial positions along the electron beam.

[0061] Electrostatic lenses (individual conductors) can be used to sense the electron flux density at each sensor location along the electron beam. They can be used to focus or deflect the electron beam—by adjusting their potential to minimize the electron flux deposited on the electrodes and VED structure. This technique is particularly advantageous for VEDs operating at millimeter-wave and near-THz frequencies to compensate for the magnetic field irregularities often encountered in such devices.

[0062] The control board can be adapted to provide multiple electrodes around the electron beam to help characterize its position and concentricity (if circular) in the beam tunnel.

[0063] The magnetic electrostatic focusing design was achieved using the multi-layer, multi-material manufacturing method described in this paper. According to this method, metallic, magnetic, and ceramic materials were employed in the manufacturing of the focusing / steering / sensing system.

[0064] This method can be used in devices such as ribbon bundles, hollow bundles, pen bundles, distributed bundles, and multi-bundle bundle types.

[0065] The propagation of the electron beam along the electron beam tunnel can be optimized by applying a potential to an available electrostatic lens using the sensed electron beam current, thereby reducing the need for technicians to assemble and tamper with the equipment.

[0066] To achieve optimal performance by fully focusing and positioning the electron beam, the current from the beam to the ground but not to the collector can be monitored and minimized by adjusting the magnetic field around the VED and the electrostatic voltage input to the individual control boards deployed along the electron beam.

[0067] Figure 13 This is a flowchart illustrating a process or method 1300 for manufacturing a vacuum electronic device according to an embodiment of the present invention. (In conjunction with...) Figure 13 The described process steps can be executed sequentially, or they can be executed in part or all at once.

[0068] Frame 1302 is the first step: forming a first planar non-magnetic conductor plate from a non-magnetic conductive material.

[0069] Box 1304 is the second step: forming a second planar non-magnetic conductor plate from a non-magnetic conductive material.

[0070] Box 1306 is the third step: an interaction structure is formed by a plurality of conductive non-magnetic interaction structure forming plates arranged in parallel with each other, such that the interaction structure contains an electron beam tunnel, the interaction structure contains at least one electrostatic lens element, the electrostatic lens element has at least one conductive path leading to the outside of the interaction structure, the conductive path is electrically insulated from the interaction structure such that the voltage applied to the conductive path will be conducted to the electrostatic lens element.

[0071] Box 1308 is the fourth step: setting the first planar nonmagnetic conductor plate, the interaction structure and the second planar nonmagnetic conductor plate as a stack, such that the first planar nonmagnetic conductor plate and the second planar nonmagnetic conductor plate are outside the stack.

[0072] Box 1310 is the fifth step: combining the first planar nonmagnetic conductor plate, the interacting structure, and the second planar nonmagnetic conductor plate together.

[0073] Box 1312 is the sixth step: surrounding the electron beam tunnel region with at least one magnet arranged to confine the electron beam within the electron beam tunnel.

[0074] Box 1314 is the seventh optional step: forming at least one electrostatic lens element such that it is configured to deliver an electrical bias signal provided on at least one electrically insulating conductor disposed on the electrostatic lens element.

[0075] Box 1316 is the seventh optional step: forming at least one electrostatic lens element such that it is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulated conductors disposed on the electrostatic lens element.

[0076] Box 1318 is the seventh optional step: forming at least one electrostatic lens element such that it is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulated conductors disposed on the electrostatic lens element.

[0077] Those skilled in the art will recognize that these steps can be performed in the order most convenient for manufacturing without having to be implemented in a locked sequence. For example, the assembly steps can all be performed at once; the forming steps can be performed in advance to manufacture parts for later assembly; and so on.

[0078] When joining these two-dimensional sheets together, the following methods can be used: brazing, diffusion bonding, assisted diffusion bonding, solid-state bonding, cold welding, ultrasonic welding, or a combination of one or more of the aforementioned methods. The seam formed between two adjacent sheets should maintain a strength greater than 1×10⁻⁶. -6 The bonding process should be carried out in a non-reactive environment, such as hydrogen, nitrogen, or vacuum. Prior to bonding, each layer should be cleaned or plasma-etched to remove surface oxide layers and kept in a vacuum environment to facilitate a good seal. If necessary, each layer can be coated (sputtering, electroplating, metallization, and / or painting) with a vacuum-compatible material that enhances the vacuum-compatible interface between the two corresponding layers (which may be different materials). Coatings may include one or more of the following: nickel, gold, silver, molybdenum-manganese, copper, copper-gold, copper-silver, titanium-nickel, gold-copper-titanium, copper-silver-titanium, copper-silver-titanium-aluminum, titanium-nickel-copper, gold-copper-titanium-aluminum, silver-copper-indium-titanium, copper-germanium, palladium-nickel-copper-silver, gold-palladium-manganese, silver-palladium, gold-copper-nickel, gold-copper-indium, silver-copper-indium, gold-nickel, gold-nickel-chromium, etc. In this way, the combined layers form a high-strength component, resulting in relatively high energy processing power and high gradient capability VED.

[0079] These layers may also be coated (sputtered, electroplated, metallized, and / or painted) with electrically insulating or conductive materials to manage potential and heat flow within the VED. The coating may also include materials designed to be thermally conductive (e.g., diamond films, diamond conduction channels, cooling channels, heat pipes, etc.) to better manage heat flow within and out of the VED. The layers may be made of an insulator (e.g., Al₂O₃) and then plated with conductive paths to form electrodes and electrical paths used to bias the electrodes.

[0080] Cutouts or cavities can be formed in the conductive sheet of a VED using techniques such as milling, turning, electrical discharge milling, photolithography, etching, laser cutting, electron beam cutting, and water jet cutting. These cutouts and cavities can then be filled with components such as ceramic materials, vacuum windows, circuit-cutting materials (attenuators used to improve device stability), electron emission materials, vacuum pumping materials, gas-absorbing materials, magnets, iron parts, shielding materials, insulating materials, wires, connectors, waveguides, and couplers.

[0081] The incorporation of ceramic materials allows for the addition of electrostatic beam-shaping lenses or regions within the VED to aid in focusing, propagation, guidance, deflection, breakdown, and ultimately, improvement of electron beam propagation between the cathode and collector. By building this capability into the VED itself, rather than providing it outside the vacuum region of the VED, finer and lower-power control of the electron beam is possible.

[0082] During manufacturing, alignment features 112 can be used to align adjacent material layers or sheets within the VED. These features can be alignment holes, alignment pins, rectangular features, combinations thereof, optical (visible) markings suitable for robotic assembly techniques, etc., as discussed elsewhere in this document. Sheet assembly can be achieved through manual assembly, robotic assembly, translation stages, automated translation, robotic placement, micron- to nanometer-level video alignment, vernier scales, etc.

[0083] Although exemplary embodiments and applications have been shown and described, it will be apparent to those skilled in the art who benefit from this disclosure that various modifications, variations and adaptations may be made to the various exemplary embodiments described herein without departing from the scope of the invention as defined by the appended claims.

Claims

1. A vacuum electronic device for a radio frequency (RF) amplifier or oscillator, comprising: First non-magnetic conductor plate; Second non-magnetic conductor plate; Multiple non-magnetic interaction structure forming plates are disposed between the first non-magnetic conductor plate and the second non-magnetic conductor plate. The multiple non-magnetic interaction structure forming plates together form an RF interaction structure that accommodates the electron beam tunnel region. The first non-magnetic conductor plate, the second non-magnetic conductor plate and the multiple non-magnetic interaction structure forming plates are combined together. A permanent magnet is arranged around the electron beam tunneling region to apply RF interaction to confine the electron beam within the electron beam tunneling region; and At least one control board electrically insulated from the RF interaction structure, the at least one control board being coupled to at least one electrically insulated conductor arranged to pass through and be electrically insulated from the RF interaction structure, the at least one electrically insulated conductor being configured to apply a corrective steering or focusing force to the electron beam within the electron beam tunneling region.

2. The vacuum electronic device of claim 1, wherein the at least one control board is configured to deliver an electrical bias signal provided on at least one electrically insulating conductor disposed on the control board.

3. The vacuum electronic device of claim 1, wherein the at least one control board is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulated conductors disposed on the control board.

4. The vacuum electronic device of claim 1, wherein the at least one control board is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulated conductors disposed on the control board.

5. The vacuum electronic device of claim 1, wherein the at least one electrically insulating conductor is further configured to sense electron flux density.

6. A vacuum electronic device (VED) for a radio frequency (RF) amplifier or oscillator, comprising: A plurality of conductive portions of an interaction structure accommodating an electron beam tunnel having a longitudinal axis parallel to the interaction structure, the electron beam tunnel being surrounded by at least one magnet arranged to apply RF interaction to confine the electron beam within the electron beam tunnel; The plurality of conductive portions are separated by a first pair of electrical insulators at a first position along the electron beam tunnel and by a second pair of electrical insulators at a second position along the electron beam tunnel, each of the first pair of electrical insulators and the second pair of electrical insulators sandwiching at least one electrostatic lens element orthogonally disposed to the longitudinal axis. as well as Each electrostatic lens element is provided with at least one conductive path leading to the outside of the interaction structure, the conductive path being electrically insulated from the interaction structure such that a voltage applied to the conductive path is conducted to the electrostatic lens element to apply a corrective deflection or focusing force to the electron beam within the electron beam tunnel.

7. The vacuum electronic device of claim 6, wherein the at least one electrostatic lens element is configured to deliver an electrical bias signal provided on at least one electrically insulating conductor disposed on the electrostatic lens element.

8. The vacuum electronic device of claim 6, wherein the at least one electrostatic lens element is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulating conductors disposed on the electrostatic lens element.

9. The vacuum electronic device of claim 6, wherein the at least one electrostatic lens element is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulating conductors disposed on the electrostatic lens element.

10. The vacuum electronic device of claim 6, wherein at least one conductive path is configured to sense electron flux density.

11. A method for manufacturing a vacuum electronic device for a radio frequency (RF) amplifier or oscillator, the method comprising: A first non-magnetic conductor plate is formed from a non-magnetic conductive material; A second non-magnetic conductor plate is formed from a non-magnetic conductive material; An interaction structure is formed by multiple conductive non-magnetic interaction structure forming plates arranged in parallel to each other, such that the interaction structure includes an electron beam tunneling region, the interaction structure includes at least one electrostatic lens element, the at least one electrostatic lens element has at least one conductive path leading to the outside of the interaction structure, the conductive path is electrically insulated from the interaction structure such that a voltage applied to the conductive path will be conducted to the electrostatic lens element; The first non-magnetic conductor plate, the interaction structure, and the second non-magnetic conductor plate are arranged in a stack such that the first non-magnetic conductor plate and the second non-magnetic conductor plate are located outside the stack. The first nonmagnetic conductor plate, the interaction structure, and the second nonmagnetic conductor plate are combined together; and At least one magnet, arranged to confine the electron beam within the electron beam tunnel region, surrounds the electron beam tunnel region.

12. The method of claim 11, further comprising: The at least one electrostatic lens element is formed such that it is configured to deliver an electrical bias signal provided on at least one electrically insulating conductor disposed on the electrostatic lens element, the at least one electrically insulating conductor being configured to apply a corrective steering or focusing force to the electron beam within the electron beam tunneling region.

13. The method of claim 11, further comprising: The at least one electrostatic lens element is formed such that it is configured to deliver at least two separate electrical bias signals provided on at least two separate electrically insulating conductors disposed on the electrostatic lens element, each electrically insulating conductor being configured to apply a corrective steering or focusing force to the electron beam within the electron beam tunneling region.

14. The method of claim 11, further comprising: The at least one electrostatic lens element is formed such that it is configured to deliver at least four separate electrical bias signals provided on at least four separate electrically insulating conductors disposed on the electrostatic lens element, each electrically insulating conductor being configured to apply a corrective steering or focusing force to the electron beam within the electron beam tunneling region.

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