Surface acoustic wave resonator with piston mode design and electrostatic discharge protection

Abstract

Certain aspects of the present disclosure provide a surface acoustic wave (SAW) resonator with a piston mode design and electrostatic discharge (ESD) protection. An example electroacoustic device generally includes a piezoelectric material and a first electrode structure disposed above the piezoelectric material. The first electrode structure includes first electrode fingers arranged within an active region having a first region and a second region. At least one of the first electrode fingers has at least one of a different width or a different height in the first region compared to in the second region, and the first electrode fingers include a first electrode finger having a width or a height in the second region that is less than a corresponding width or height of the at least one of the first electrode fingers in the second region.

Description

Technical Field

[0001] This disclosure relates to various aspects of electronic devices, and more specifically to surface acoustic wave (SAW) resonators having a piston-mode design and electrostatic discharge (ESD) protection. Background Technology

[0002] Electronic devices include traditional computing devices such as desktop computers, laptops, tablets, smartphones, wearable devices such as smartwatches, and internet servers. These diverse electronic devices provide human users with information, entertainment, social interaction, confidentiality, security, productivity, transportation, manufacturing, and other services. Many of the functions of these various electronic devices rely on wireless communication. Wireless communication systems and devices are widely deployed to provide various types of communication content, such as voice, video, packet data, messaging, and broadcasting. Wireless communication devices can transmit and / or receive radio frequency (RF) signals via any of a variety of suitable radio access technologies (RATs), including but not limited to 5G New Radio (NR), LTE, Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Wideband CDMA (WCDMA), Global System for Mobile Communications (GSM), Bluetooth, Bluetooth Low Energy (BLE), ZigBee, and Wireless Local Area Network (WLAN) RATs (e.g., IEEE 802.11).

[0003] Wireless communication transceivers used in these electronic devices typically include multiple radio frequency (RF) filters used to filter signals at specific frequencies or frequency ranges. Electroacoustic devices (e.g., "acoustic filters") are used in many applications to filter high-frequency (e.g., typically greater than 500 MHz) signals. Acoustic resonators operate by using piezoelectric materials as the vibrating medium, converting electrical signal waves propagating along an electrical conductor into sound waves propagating via the piezoelectric material. Sound waves propagate at speeds significantly smaller than the propagation speed of electromagnetic waves. Generally, the propagation speed of a wave is proportional to its wavelength. Therefore, after converting an electrical signal into an acoustic signal, the wavelength of the acoustic signal wave is significantly smaller than the wavelength of the electrical signal wave. The smaller wavelength of the resulting acoustic signal allows for the use of smaller filter devices to perform filtering. This allows the use of acoustic resonators in electronic devices with size constraints, such as those listed above (e.g., particularly portable electronic devices such as cellular phones).

[0004] As the number of frequency bands used in wireless communication increases and the desired bandwidth of filters expands, the performance of acoustic filters becomes increasingly important for reducing resistive losses, increasing out-of-band signal attenuation, and improving the overall performance of electronic devices. Therefore, acoustic filters with improved performance are in high demand. Summary of the Invention

[0005] The systems, methods, and apparatuses disclosed herein each have several aspects, none of which are solely responsible for their desired properties. Without limiting the scope of this disclosure as set forth in the following claims, some features will now be briefly discussed. After considering this discussion, and particularly after reading the section entitled “Detailed Description,” one will be able to understand how the features of this disclosure provide the advantage of including electroacoustic devices with desired electrostatic discharge (ESD) strength.

[0006] Certain aspects of this disclosure can be implemented in an electroacoustic device. The electroacoustic device typically includes a piezoelectric material and a first electrode structure disposed above the piezoelectric material. The first electrode structure includes a plurality of first electrode fingers arranged in an active region having a first region and a second region. At least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to the second region, and the plurality of first electrode fingers includes first electrode fingers having the same thickness in both the first and second regions.

[0007] Certain aspects of this disclosure can be implemented in an electroacoustic device. The electroacoustic device typically includes a piezoelectric material, a first interdigitated electrode structure, and a second interdigitated electrode structure. The first interdigitated electrode structure is disposed above the piezoelectric material. The first electrode structure includes a plurality of first electrode fingers arranged in an active region having a first region and a second region. At least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to the second region, and the plurality of first electrode fingers includes a first electrode finger whose width or height in the second region is less than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region. The second interdigitated electrode structure is disposed above the piezoelectric material and adjacent to the first electrode structure. The second electrode structure includes a plurality of second electrode fingers arranged in the active region. At least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to the second region, and the plurality of second electrode fingers includes a second electrode finger disposed adjacent to the first electrode fingers of the first electrode structure.

[0008] Certain aspects of this disclosure can be implemented as a method for manufacturing an electroacoustic device. This method typically includes forming a first electrode structure over a piezoelectric material, wherein forming the first electrode structure includes forming a plurality of first electrode fingers disposed within an active region having a first region and a second region. Forming the plurality of first electrode fingers includes forming at least one of a plurality of first electrode fingers having at least one of a different width or a different height compared to the second region, and forming a first electrode finger in the second region having a width or height smaller than the corresponding width or height of the at least one of the plurality of first electrode fingers in the second region.

[0009] To achieve the foregoing and related objectives, one or more aspects include the features fully described and specifically pointed out in the following claims. The following description and drawings set forth certain illustrative features of one or more aspects in detail. However, these features indicate only a few of the various ways in which the principles of each aspect can be employed. Attached Figure Description

[0010] To gain a more detailed understanding of the features described above, reference can be made to various aspects, as briefly summarized above, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only certain typical aspects of this disclosure and should therefore not be considered as limiting its scope, as the specification may acknowledge other equally valid aspects.

[0011] Figure 1A This is a conceptual illustration of an example electroacoustic device according to certain aspects of this disclosure.

[0012] Figure 1B This illustrates certain aspects of this disclosure. Figure 1A A cross-sectional view of an example electroacoustic device.

[0013] Figure 2A This is a diagram illustrating an example electroacoustic device having specific electrode fingers without a piston-mode hammerhead according to certain aspects of this disclosure.

[0014] Figure 2B This illustrates certain aspects of this disclosure. Figure 2A A cross-sectional view of an example electroacoustic device.

[0015] Figure 3 It is a graph showing various transition regions of an example electroacoustic device according to certain aspects of this disclosure, wherein the electrode fingers can be configured without a piston-mode hammer.

[0016] Figure 4A and Figure 4B This is a diagram illustrating a portion of an example electroacoustic device having specific electrode fingers without a piston-mode hammerhead, according to certain aspects of this disclosure.

[0017] Figures 5A-5F This is a diagram of an example transition region according to certain aspects of this disclosure, wherein the electrode fingers have various piston-mode waveguide arrangements.

[0018] Figure 6 This is a diagram illustrating another example electroacoustic device having specific electrode fingers without a piston-mode hammerhead, according to certain aspects of this disclosure.

[0019] Figure 7 It may include certain aspects of this disclosure. Figure 2A , Figure 4A or Figure 6 A schematic diagram of an example electroacoustic filter circuit for electroacoustic devices.

[0020] Figure 8 This is a flowchart illustrating example operations for manufacturing electroacoustic devices according to certain aspects of this disclosure.

[0021] Figure 9 Certain aspects of this disclosure may be adopted therein. Figure 7 A diagram of an example transceiver for an electroacoustic filter.

[0022] Figure 10 This is a diagram of a wireless communication network according to certain aspects of this disclosure, the wireless communication network including having, for example... Figure 9 Wireless communication devices such as transceivers.

[0023] For ease of understanding, the same reference numerals are used where possible to denote the same elements that are common in the accompanying drawings. It is conceivable that elements disclosed in one aspect may be usefully used in other aspects without specific explanation. Detailed Implementation

[0024] This disclosure provides a piston-mode electroacoustic device with electrostatic discharge (ESD) protection.

[0025] Electroacoustic devices employing interdigitated electrode structures disposed on the surface of piezoelectric materials (such as surface acoustic wave (SAW) resonators) are designed to cover a wider frequency range (e.g., 500 MHz to 7 GHz), have higher bandwidth, and exhibit improved efficiency and performance. Typically, some SAW resonators are designed to induce sound waves to propagate through the piezoelectric material in a specific direction (e.g., a dominant acoustic mode). However, due to the properties of the specific piezoelectric material used and the way it is excited by the electrode structure, at least some undesirable acoustic modes may be generated in other directions. For example, transverse acoustic modes may be excited in the piezoelectric material in directions transverse to the dominant (e.g., fundamental) acoustic mode. These transverse acoustic modes may be undesirable and have a detrimental effect on resonator performance (e.g., introducing ripples in the passband of a filter). By adjusting the characteristics of the electrode structure, the sound velocity in individual transverse regions can be controlled in a manner that reduces transverse acoustic modes. For example, piston-mode waveguides can be arranged along the electrode structure to suppress transverse disturbances, as discussed herein. Figure 2A and Figure 2B Further details are provided.

[0026] Example electroacoustic devices

[0027] Figure 1A This is a perspective view illustrating an example electroacoustic device 100. Electroacoustic device 100 can be configured as a SAW resonator, or as part of a SAW resonator. In some descriptions herein, electroacoustic device 100 may be referred to as a SAW resonator. However, other types of electroacoustic devices may exist that can be constructed based on the principles described herein. In some cases, wireless communication devices may include SAW resonators, for example, as described herein. Figure 7 , Figure 9 and Figure 10 Further details are provided.

[0028] Electroacoustic device 100 includes an electrode structure 104 located on the surface of piezoelectric material 102, which may be referred to as an interdigital transducer (IDT). Electrode structure 104 typically includes a first comb-shaped electrode structure and a second comb-shaped electrode structure (conductive and typically metallic), with a plurality of first electrode fingers 106 and a plurality of second electrode fingers 108 extending toward each other from two busbars 110, 112 and arranged in an interlocking manner between the two busbars 110, 112 (e.g., arranged in an interdigital manner). An electrical signal excited in electrode structure 104 (e.g., an applied AC voltage) is converted into a sound wave 114, which propagates in a specific direction via piezoelectric material 102. The sound wave 114 is converted back into an electrical signal and provided as an output. That is, applying an electrical signal to piezoelectric material 102 via the first electrode fingers 106 can convert the electrical signal into sound wave 114 in piezoelectric material 102. The sound wave 114 is converted back into an electrical signal via multiple second electrode fingers 108, and the multiple second electrode fingers 108 provide an electrical signal as an output. In other words, the sound wave 114 is converted into an electrical signal via multiple second electrode fingers 108.

[0029] In many applications, the piezoelectric material 102 has a specific crystal orientation such that when the electrode structure 104 is arranged relative to the crystal orientation of the piezoelectric material 102, the acoustic waves propagate primarily in a direction perpendicular to the fingers (e.g., parallel to the busbar).

[0030] Figure 1B yes Figure 1A The electroacoustic device 100 along Figure 1A The image shows a side view of cross-section 116. The electroacoustic device 100 is illustrated by a simplified stack comprising a piezoelectric material 102 having an electrode structure 104 disposed thereon. The electrode structure 104 is conductive and is typically formed of a metallic material. The electrode structure 104 may comprise a conductive material, such as a metal or metal alloy, including aluminum (Al), chromium (Cr), cobalt (Co), copper (Cu), gold (Au), molybdenum (Mo), platinum (Pt), ruthenium (Ru), tantalum (Ta), titanium (Ti), tungsten (W), or combinations thereof.

[0031] The piezoelectric material 102 can be formed from a variety of materials, including piezoelectric materials such as aluminum nitride (AlN), zinc oxide (ZnO), quartz crystals (such as lithium tantalate (LiTaO3) or lithium niobate (LiNbO3)), doped variants of these materials, or other suitable piezoelectric materials.

[0032] It should be recognized that there can be more complex stacks within the stack, including layers of various materials. For example, optionally, by Figure 1BThe temperature compensation layer 118, indicated by the dashed line, can be disposed above the electrode structure 104. The piezoelectric material 102 can be extended using multiple interconnected electrode structures disposed thereon to form a multi-resonator filter or provide multiple filters. In some cases, the electroacoustic device 100 can be implemented as a thin-film SAW resonator, wherein the stack can include a substrate (which may have a trap-rich layer), a compensation layer, a thin piezoelectric layer, and electrode structures disposed above the piezoelectric layer.

[0033] Although not shown, a capping layer may be disposed on the electrode structure 104. The capping layer is applied such that a cavity is formed between the electrode structure 104 and the lower surface of the capping layer. Vias or bumps may also be included to allow electrical connection of components to connections on the substrate (e.g., via flip chip or other techniques).

[0034] In some cases, a so-called "piston-mode waveguide" can be formed by two waveguide regions arranged along the electrode fingers, with an inner region positioned between the two waveguide regions. Since the angular and frequency positions of the transverse acoustic modes depend on the directional acoustic velocity, in one respect, the transverse velocity distribution within the acoustic track can be designed in a manner that reduces transverse acoustic modes and promotes the excitation of the dominant or fundamental mode. Specifically, the electrode structure (and potentially other layers) can be tuned in different regions of the electrode structure to modulate the transverse velocity distribution within the acoustic track, thereby reducing transverse acoustic modes (e.g., effectively forming a transverse acoustic waveguide). In some respects, the velocity of sound can correspond to the velocity of sound of the fundamental mode of the electroacoustic device, although the velocity can be understood more generally in some respects to capture or be associated with different modes.

[0035] The waveguide region is positioned at any outer boundary of the inner region where the electrode fingers overlap. Structural characteristics distinct from those in the inner region are provided in the waveguide region to create an electroacoustic device aligned with the waveguide region, exhibiting a reduced acoustic wave velocity, particularly lower than that in the region defined by the inner region. Such structural characteristics may include widening the electrode fingers in the waveguide region and / or increasing the height of the electrode fingers in the waveguide region, but many implementations are possible. That is, in the waveguide region, the electrode fingers may have a larger width and / or a larger height than in the inner region, for example, as... Figure 2AAs shown. The structural differences in the electrode fingers along the waveguide region can be referred to as "hammers". In some cases, the hammers in the waveguide region can be taller than the electrode fingers in the inner region (i.e., have a larger height), but they do not necessarily need to be wider than the electrode fingers in the inner region. Compared to the distance between the electrode fingers in the inner region, SAW resonators with a piston-mode design can have a smaller distance between the hammers of the interdigitated fingers. For example, adjacent hammers of two electrode fingers can have different potentials due to the transition between interdigital transducers (IDTs) or between an IDT and a reflector.

[0036] During the assembly of surface acoustic wave (SAW) resonators into multi-chip packages (MDPs) and modules, and during the handling of these resonators by the end customer, voltages may be present (e.g., due to assembly activities), which can cause ESD within the resonator structure and thus irreversible damage to the filter. For SAW resonators with piston-mode waveguides, the interdigitated electrode structure can exhibit lower ESD intensity (or higher ESD sensitivity) due to the shorter distance between two adjacent hammers. In some respects, the region between two adjacent hammers can define the minimum distance between adjacent fingers with different potentials, and therefore can exhibit the highest electric field intensity. Adjacent hammers with different potentials may pose a higher risk of permanent damage to the resonator due to ESD during module assembly or end-user handling. ESD between hammers can reduce the manufacturing yield of SAW resonators due to ESD damage during manufacturing, and / or lead to a higher number of returns by the end user due to ESD damage during end-user handling.

[0037] For dual-mode SAW (DMS) transducers, the distance between adjacent transducer elements determines the passband characteristics of the filter's transfer function. This results in smaller transducer-to-transducer distances for filters in the 2 GHz and above range (e.g., 240 nm), leading to a significant reduction in the ESD resistance of these specific filters. In some cases, resonators not directly connected to the filter's input / output terminals can cause irreversible damage to the filter due to ESD.

[0038] Some aspects of this disclosure relate to an electroacoustic device having specific electrode fingers without piston-mode hammers. For example, adjacent electrode fingers of an adjacent IDT can be arranged without hammers to achieve greater ESD strength. In some cases, additional electrode fingers adjacent to the transition region between IDTs can also be formed without hammers. The electrode finger designs described herein can realize electroacoustic devices (such as SAW resonators) with desired ESD strength. As used herein, ESD strength can refer to ESD withstand voltage sensitivity, which is the maximum test voltage at which a device (e.g., an electroacoustic device) does not suffer damage during ESD machine models, charging device models, or human models. For example, the electrode finger designs described herein (e.g., selectively removing piston-mode hammers from specific electrode fingers) can increase the withstand voltage during ESD machine models or human models by at least three times (e.g., from 50V to 175V or from 100V to 425V) compared to an electroacoustic device without such electrode finger design.

[0039] Example electroacoustic devices with selective piston mode design

[0040] Various aspects of this disclosure provide for the selective withdrawal of one or more hammers of electrode fingers, for example, in transition regions of electroacoustic devices, where electrode structures are arranged adjacent to each other (such as IDT-IDT transitions or IDT reflector transitions) or along IDT electrode tracks independent of the transition region. That is, the selective withdrawal of one or more hammers of electrode fingers can be applied to transition regions, but can also be applied to individual IDT elements themselves (where a particular electrode finger does not have a hammer). In some cases, in specific transition regions where electrode fingers are formed without hammers, the electrode fingers can be formed without a height extension. In some cases, specific transition regions can be selected from regions presenting a small distance between electrode fingers at different potentials. With the removal of one or more hammers, the distance between certain fingers can increase, which in turn may result in a desired ESD resistance. The maximum possible increase in distance in a specific transducer region depends on the extent to which the hammer width exceeds the finger width (this difference is referred to as "hammer offset"). For example, a 50 nm hammer offset can be used in some SAW resonators. Removal of the hammer offset may result in an increase of 100 nm in the distance between two fingers. For the exemplary receiving filter, this distance increases from 240 nm to 340 nm, which corresponds to a 41% increase. For this particular receiving filter, the withstand voltage of the machine model increases from 50 V to 175 V, and the withstand voltage of the human model increases from 100 V to 425 V.

[0041] Figure 2A and Figure 2B This is a diagram illustrating an example electroacoustic device 200 having specific electrode fingers without a piston-mode hammerhead according to certain aspects of this disclosure. Figure 2A This is a top view of the electroacoustic device 200, and Figure 2B It is shown as follows Figure 2A The electroacoustic device 200 shown is a side view along cross section 270.

[0042] Electroacoustic device 200 may include piezoelectric material 202 (e.g. Figure 2B (As shown) and the first electrode structure 204. In some aspects, the electroacoustic device 200 may also include a second electrode structure 220, a third electrode structure 222, a fourth electrode structure 224, and a fifth electrode structure 226. Although described herein with respect to the presence of five electrode structures. Figure 2A The examples shown are for illustrative purposes, but aspects of this disclosure can also be applied to electroacoustic devices having at least two electrode structures. In some cases, the electroacoustic device 200 may be a SAW resonator.

[0043] The first electrode structure 204 can be disposed above the piezoelectric material 202, for example, as Figure 2B As shown. The first electrode structure 204 may include a plurality of first electrode fingers 206 disposed within an active region 208 having a first region 210 and a second region 212. In this example, the first electrode structure 204 is an IDT such that the plurality of first electrode fingers 206 are arranged in an interdigitated manner, for example, as described herein. Figure 1A The electroacoustic device 100 is described. In other cases, the first electrode structure 204 may be a reflector grating.

[0044] In various aspects, the active region 208 may also have a third region 214. In various aspects, the active region 208 may represent a region including a central region (e.g., a first region 210) arranged along one or more electrode structures between two waveguide regions (e.g., a second region 212 and a third region 214). In some aspects, the active region may be indicated by the overlapping region of interdigitated electrode fingers (e.g., of opposite polarity) and may correspond to the region in which acoustic waves propagating perpendicular to the direction of extension of the electrode fingers are excited when an RF signal is applied to the electrode structure. The first region 210 may be arranged between the second region 212 and the third region 214 such that the second region 212 and the third region 214 may define the positions where piston-mode waveguides are arranged along the various electrode structures (204, 220, 222, 224, 226) of the electroacoustic device 200. For example, at least one of the plurality of first electrode fingers 206 (referred to herein as first hammerhead electrode finger 216) has a different width and / or a different height in the first region 210 than in the second region 212, and in some cases, also in the third region 214. In some cases, the width and / or height of the first hammerhead electrode finger 216 may be greater in the second region 212 and the third region 214 than in the first region 210. In other words, a hammerhead may be arranged along the first hammerhead electrode finger 216 in the second region 212 and the third region 214. The first hammerhead electrode finger 216 may also have a greater height in the second region 212 and the third region 214 than in the first region 210, as described herein. Figure 2B Furthermore, in some cases, the hammerhead fingers may have a wider width only in the second region 212 and the third region 214 than in the first region 210. In other cases, the hammerhead electrode fingers may have a larger height only in the second region 212 and the third region 214 than in the first region 210.

[0045] In various respects, most of the plurality of first electrode fingers 206 may have a larger width and a larger height in the second region 212 and the third region 214 than in the first region 210. In other words, most of the plurality of first electrode fingers 206 may have hammerheads arranged in the second region 212 and the third region 214, such that the first electrode structure 204 includes a piston-mode electrode structure.

[0046] In various aspects, multiple first electrode fingers 206 may include first electrode fingers 218 having the same width and height in the first region 210 and the second region 212. In some cases, the first electrode fingers 218 may also have the same width and height in the first region 210, the second region 212, and the third region 214. The same width and height in the first region 210 and the second region 212 results in the first electrode fingers 218 not having a hammerhead in the second region 212. That is, the width or height of the first electrode fingers 218 in the second region 212 may be smaller than the corresponding width or height of the first hammerhead electrode fingers 216 in the second region 212. When the first electrode fingers 218 are adjacent to the second electrode structure 220, the absence of a hammerhead along the first electrode fingers 218 can achieve the desired ESD strength, especially between the first electrode structure 204 and the second electrode structure 220.

[0047] In various aspects, the second electrode structure 220, the third electrode structure 222, the fourth electrode structure 224, and the fifth electrode structure 226 can be disposed above the piezoelectric material 202, for example, as... Figure 2B A portion of the second electrode structure 220 is depicted above the piezoelectric material 202. The second electrode structure 220 and the third electrode structure 222 may be disposed adjacent to the first electrode structure 204, such that the first electrode structure 204 is disposed between the second electrode structure 220 and the third electrode structure 222.

[0048] In some respects, the second electrode structure 220 and the third electrode structure 222 may be an IDT. In this example, the electrical input terminal 228 and the reference voltage 230 (e.g., ground voltage) may be electrically coupled to the opposite busbars 232, 234 of the first electrode structure 204, and the electrical output terminal 236 and the reference voltage 230 may be electrically coupled to the opposite busbars (238, 240, 242, 244) of the second electrode structure 220 and the third electrode structure 222.

[0049] In various aspects, the fourth electrode structure 224 and the fifth electrode structure 226 may be reflector gratings disposed adjacent to the second electrode structure 220 and the third electrode structure 222, respectively. In some aspects, the fourth electrode structure 224 and the fifth electrode structure 226 may not be directly coupled to the input terminal 228, the reference voltage 230, or the output terminal 236. In this example, the fourth electrode structure 224 and the fifth electrode structure 226 are depicted as short-circuited reflector gratings. That is, the electrode fingers of each of the fourth electrode structure 224 and the fifth electrode structure 226 are electrically short-circuited together, for example, via a busbar. In some cases, the electroacoustic device 200 may include one or more open reflector gratings. Compared to short-circuited reflector gratings, the electrode fingers of open reflector gratings are not electrically coupled together via a busbar.

[0050] In some cases, hammerless electrode fingers may be arranged along the electroacoustic device 200 in a transition region. As used herein, a transition region can refer to a region in which electrode structures are arranged adjacent to each other, such as an IDT-IDT region or an IDT reflection region. In various aspects, the transition region may not be limited to the region between two adjacent electrode structures and may include some of the internal electrode fingers of the electrode structures. For example, transition region 246 may include some of the plurality of first electrode fingers 206 belonging to the first electrode structure 204 and some of the plurality of second electrode fingers 248 belonging to the second electrode structure 220. In some aspects, certain electrode fingers within the transition region may be formed without hammers to achieve a desired ESD intensity between the electrode structures, for example, as described herein. Figures 5A-5E Further details are provided.

[0051] The second electrode structure 220 may include a plurality of second electrode fingers 248 disposed within the active region 208. In this example, the second electrode structure 220 is an IDT such that the plurality of second electrode fingers 248 are arranged in an interdigitated manner. The transition region 246 is an IDT-IDT transition region. In some cases, the second electrode structure 220 may be a reflector grating, such that the transition region 246 is an IDT reflector transition region.

[0052] The second region 212 and the third region 214 may define the positions where the piston-mode waveguide is arranged along the second electrode structure 220. For example, at least one of the plurality of second electrode fingers 248 (referred to herein as the second hammerhead electrode finger 250) has a different width and / or a different height in the first region 210 than in the second region 212, and in some cases, also in the third region 214. In some cases, the width of the second hammerhead electrode finger 250 may be greater in the second region 212 and the third region 214 than in the first region 210. In other words, the hammerhead may be arranged along the second hammerhead electrode finger 250 in the second region 212 and the third region 214. The second hammerhead electrode finger 250 may also have a greater height in the second region 212 and the third region 214 than in the first region 210, as described herein. Figure 2B Further details are provided.

[0053] In various respects, most of the plurality of second electrode fingers 248 may have a larger width and / or a larger height in the second region 212 and the third region 214 than in the first region 210. In other words, most of the plurality of second electrode fingers 248 may have hammerheads arranged in the second region 212 and the third region 214, such that the second electrode structure 220 includes a piston-mode electrode structure.

[0054] In various aspects, the plurality of second electrode fingers 248 may include second electrode fingers 252 having the same width and height in the first region 210 and the second region 212. In some cases, the second electrode fingers 252 may also have the same width and height in the first region 210, the second region 212, and the third region 214. The width and height in the first region 210 and the second region 212 result in the second electrode fingers 252 not having a hammer in the second region 212. That is, the width or height of the plurality of second electrode fingers 248 in the second region 212 may be smaller than the corresponding width or height of the second hammer electrode finger 250 in the second region 212. When the second electrode finger 252 is adjacent to the first electrode structure 204, the absence of a hammer along the second electrode finger 252 can achieve the desired ESD strength, especially between the first electrode structure 204 and the second electrode structure 220. In this example, the second electrode finger 252 is arranged adjacent to the first electrode finger 218, and both the first electrode finger 218 and the second electrode finger 252 lack hammers in the second region 212 and the third region 214. In some cases, for example, there may be various arrangements where hammers are missing in an area, as discussed in this article. Figures 5A-5E As stated above.

[0055] As shown in the figure, the electroacoustic device 200 includes adjacent electrode fingers of an electrode structure that can be configured in other transition regions without hammers, as described herein with respect to the first electrode finger 218 and / or the second electrode finger 252. As used herein, adjacent electrode fingers can refer to two electrode fingers of separate electrode structures that are adjacent to each other. In various aspects, the electrode fingers can have various hammer arrangements in these transition regions, for example, as described herein with respect to… Figures 5A-5E Further details are provided.

[0056] like Figure 2BAs shown, the first electrode finger 218 and the second electrode finger 252 may have a first height 254 and a first width 256 in the third region 214, and may have the same or similar height and width in the first region 210 and the second region 212. In each aspect, the first hammerhead electrode finger 216 and the second hammerhead electrode finger 250 may have a second height 258 and a second width 260 in the third region 214, and may have the same or similar height and width in the second region 212. In the first region, the first hammerhead electrode finger 216 and the second hammerhead electrode finger 250 may have the same height and width as the first height 254 and the first width 256. In this example, the first height 254 and the first width 256 may be smaller than the second height 258 and the second width 260, respectively. In some cases, the first height 254 may be less than, equal to, or greater than the second height 258, while the first width 256 may be less than the second width 260. In some cases, the first width 256 may be less than, equal to, or greater than the second width 260, while the first height 254 may be less than the second height 258. Those skilled in the art will understand that the first electrode finger 218 and the second electrode finger 252 are relative to Figure 2B The structural differences between the first hammerhead electrode finger 216 and the second hammerhead electrode finger 250 shown are merely exemplary. Additional or alternative structural differences may be used to complement or replace the shown structural differences. For example, as a supplement or alternative to changing the electrode fingers, an additional dielectric layer (or other material layer) may be disposed in the region to increase the mass load and affect the sound velocity distribution in that region. Other alternatives are also possible.

[0057] In various aspects, the electrode fingers without hammerheads can be selected based on a variety of factors or criteria. For example, electrode fingers can be selected based on the potential of the electrode fingers or the spacing between electrode structures. In various aspects, adjacent electrode fingers of the electrode structure (e.g., electrode fingers 218, 252) can be coupled to different voltages, which may lead to an increased probability of ESD. For example, the first electrode finger 218 can be coupled to a first node (such as input terminal 228) configured to have a first voltage, and the second electrode finger 252 can be coupled to a second node (such as output terminal 236) configured to have a second voltage. The first voltage can be different from the second voltage, and in some cases, the first voltage and the second voltage can be different from a reference voltage 230 (e.g., ground voltage). For example, a plurality of first electrode fingers 206 may include a third electrode finger (e.g., a first hammerhead electrode finger 216) arranged adjacent to the first electrode fingers 218 and coupled to a third node configured to have a reference voltage (e.g., reference voltage 230), wherein the reference voltage can be different from the first voltage and the second voltage. In other words, the transition region of the electrode fingers configured without one or more hammers can be a location where adjacent electrode fingers of the electrode structure (e.g., the first electrode structure 204 and the second electrode structure 220) have different voltages, and in some cases, the different voltages may not be reference voltages, such as ground.

[0058] In some cases, within certain transition regions (e.g., transition region 246), the distance between specific regions between two electrode structures (e.g., first electrode structure 204 and second electrode structure 220) may be shorter than the distance between adjacent electrode fingers within the electrode structures. This particular type of transition region may result in undesirable ESD intensity without specific electrode fingers configured to enhance ESD intensity as described herein. Electrode fingers in such transition regions may be candidate electrode fingers for being formed without one or more piston-mode hammerheads, and at least one of the electrode fingers in the transition region may be formed without one or more piston-mode hammerheads. For example, a plurality of first electrode fingers 206 of the first electrode structure 204 may have a first spacing between adjacent electrode fingers among the plurality of first electrode fingers 206 (such as between first electrode finger 218 and first hammerhead electrode finger 216). A plurality of second electrode fingers 248 of the second electrode structure 220 may have a second spacing between adjacent electrode fingers among the plurality of second electrode fingers 248 (such as between second electrode finger 252 and second hammerhead electrode finger 250). The first electrode finger 218 may be spaced apart from the second electrode finger 252 by a third interval different from the first and second intervals, and in some cases, the third interval may be smaller than at least one of the first or second intervals. In this case, the first electrode finger 218 and / or the second electrode finger 252 may be configured without one or more piston-pattern hammers.

[0059] Hammer electrode fingers (e.g., first hammer electrode finger 216) may have alternative or additional structural characteristics in the second region 212 and third region 214 that differ from those in the first region 210. For example, additional mass loads may be applied to the electrode fingers in the second region 212 and third region 214, such as using a different conductive material for the electrode fingers in the second region 212 and third region 214 than in the first region 210. In some cases, additional or alternative dielectric layers may be arranged above or below the second region 212 and third region 214 compared to the first region 210. Regarding the electroacoustic device 200, the difference in width or height of the first hammer electrode finger 216 in the first region 210 compared to the second region 212 and / or third region 214 may refer to these alternative or additional structural characteristics of the waveguide region, such as the mass load on the electrode or a change in the layer above or below the electrode. Hammer electrode fingers in other electrode structures may also have alternative or additional structural characteristics in the second region 212 and third region 214 that differ from those in the first region 210.

[0060] Figure 3 This is a graph 300 illustrating various example transition regions (IDT-IDT or IDT reflectors) according to certain aspects of this disclosure, where the electrode fingers can be configured without hammers. Curves 302, 304, and 306 represent the distances (e.g., distances in the range y to y+20) from a given electrode finger (e.g., 0 to N electrode fingers) in certain regions of the active region (e.g., active region 208) to adjacent electrode fingers. For example, curve 302 represents the distance to adjacent electrode fingers within a region between piston-mode waveguides (e.g., first region 210), and curves 304 and 306 represent the distances to adjacent electrodes at piston-mode waveguides (e.g., second region 212 and / or third region 214). Curve 304 represents the distance of an electroacoustic device with certain transition regions (such as transition regions 312, 316) where the electrode fingers are configured without hammers, as shown in electrode finger diagram 308, while curve 306 represents the distance of an electroacoustic device with transition regions where hammers are retained, as shown in electrode finger diagram 310. Electrode finger diagrams 308 and 310 depict the potentials of the electrode fingers in transition regions 312, 314, and 316. In each respect, adjacent electrode fingers in transition regions 312 and 316 have different potentials, while adjacent electrode fingers in transition region 314 have the same ground potential.

[0061] Curves 304 and 306 illustrate the differences in electrode distances within transition regions 312, 314, and 316. For example, curve 306 shows that transition regions 312 and 316 have shorter distances than transition region 314. In all respects, the electroacoustic device associated with curve 306 may be more susceptible to ESD in transition regions 312 and 316. In transition regions 312 and 316, curve 304 has larger distances than curve 306, and for some electrode fingers, curve 304 matches the distance represented by curve 302. These transition regions 312 and 316 can result in electroacoustic devices associated with curve 304 having greater ESD intensity than those associated with curve 306. In transition region 314, curves 304 and 306 can have the same distance to adjacent electrode fingers. In the case of transition region 314, this may be because adjacent electrode fingers have the same potential in transition region 314, where there may be almost no ESD risk.

[0062] In designing electroacoustic devices, the distance between adjacent electrode fingers and / or the potential of adjacent electrode fingers can determine which electrode fingers are selected to be formed without hammerheads, as discussed in this article. Figure 2A and Figure 2B As described above. For example, one or more transition regions (such as transition regions 312, 316) with the shortest distance between adjacent electrode fingers can be selected, wherein the electrode fingers are formed without one or more hammers. In various aspects, a threshold can be used to identify transition regions with the shortest distance, such as a threshold percentage of transition regions with the shortest distance or a specific number (e.g., one, five, or N-1 transition regions) of transition regions with the shortest distance. In some aspects, one or more transition regions (such as transition regions 312, 316) can be selected, wherein adjacent electrode fingers have different potentials and are not grounded, wherein the electrode fingers are formed without one or more hammers. In various aspects, curve 304 can represent the distance obtained after modifying the design of the electroacoustic device associated with curve 306. That is, curve 306 can be used to identify a specific transition region where the electrode fingers are formed without hammers to provide the desired ESD intensity.

[0063] Figure 4A and Figure 4B This is a diagram illustrating a portion of an example electroacoustic device 400 having specific electrode fingers without a piston-mode hammerhead according to certain aspects of this disclosure. As shown, the electroacoustic device 400 includes a first electrode structure 402 disposed adjacent to a second electrode structure 404. In various aspects, the first electrode structure 402 may be an IDT or a reflector grating, and the second electrode structure 404 may be an IDT. Within a transition region 406, the first electrode structure 402 may have first electrode fingers 408 disposed adjacent to second electrode fingers 410 of the second electrode structure 404. Reference Figure 4B The first electrode finger 408 and the second electrode finger 410 can be formed without a hammer along the piston-mode waveguide regions 412, 414. Without the hammer, the first electrode finger 408 and the second electrode finger 410 can achieve the desired ESD intensity, which is partly due to the increased distance between the first electrode finger 408 and the second electrode finger 410.

[0064] Figures 5A-5F This is a diagram of an example transition region according to certain aspects of this disclosure, wherein the electrode fingers have various piston-mode waveguide arrangements that can achieve the desired ESD intensity.

[0065] In some respects, one of the adjacent electrode fingers can be configured to have no hammer in the transition region. (Reference) Figure 5A The first electrode structure 502 and the second electrode structure 504 are disposed adjacent to each other. In various respects, the first electrode structure 502 may be an IDT or a reflector grating, and the second electrode structure 504 may be an IDT. The first electrode structure 502 has a first electrode finger 506 disposed adjacent to the second electrode finger 508 of the second electrode structure 504. In this example, the first electrode finger 506 may have a larger width or height in the second region 512 and the third region 514 than in the first region 510. In other words, the first electrode finger 506 has a different width and / or height in the first region 510 than in the second region 512 and the third region 514. The second electrode finger 508 may have the same width and height in the first region 510, the second region 512, and the third region 514. That is, the width or height of the second electrode finger 508 in the second region 512 and the third region 514 may be smaller than the corresponding width or height of the first electrode finger 506 in the second region 512 and the third region 514.

[0066] refer to Figure 5B The first electrode finger 506 has the same width and height in the first region 510, the second region 512, and the third region 514, and the second electrode finger 508 has a different width and / or a different height in the first region 510 than it does in the second region 512 and the third region 514. In other words, the width or height of the first electrode finger 506 in the second region 512 and the third region 514 is smaller than the corresponding width or height of the second electrode finger 508 in the second region 512 and the third region 514.

[0067] In some respects, the absence of hammerheads between adjacent electrode fingers can alternate between piston-mode waveguide regions. (Reference) Figure 5CThe first electrode finger 506 has the same width and height in both the third region 514 and the first region 510, and has a different width and / or a different height in the second region 512 compared to its height in the first region 510. Similarly, the second electrode finger 508 has the same width and height in both the first and second regions 510, and has a different width and / or a different height in the third region 514 compared to its height in the first region 510. In other words, the width or height of the first electrode finger 506 in the third region 514 is less than the corresponding width or height of the second electrode finger 508 in the third region 514, and the width and height of the second electrode finger in the second region 512 are also less than the corresponding width and height of the second electrode finger 508 in the second region 512.

[0068] In some respects, two adjacent electrode fingers can be configured to have no hammerhead in the transition region. (Reference) Figure 5D The first electrode finger 506 has the same width and height in the first region 510, the second region 512, and the third region 514, and the second electrode finger 508 also has the same width and height in the first region 510, the second region 512, and the third region 514. In other words, the width or height of the first electrode finger 506 in the second region 512 and the third region 514 is smaller than the corresponding width or height of the other electrode finger in the second region 512 and the third region 514. The width or height of the second electrode finger 508 in the second region 512 and the third region 514 is also smaller than the corresponding width or height of the other electrode finger in the second region 512 and the third region 514.

[0069] In some respects, other electrode fingers can be configured without hammers in the transition region. (Reference) Figure 5E The first electrode finger 506 and the second electrode finger 508 can be configured to have no hammer in the second region 512 and the third region 514. The first electrode structure 502 may include a third electrode finger 516 arranged adjacent to the first electrode finger 506. The third electrode finger 516 may have the same width and height in the first region 510 and in at least one of the second region 512 or the third region 514. As shown, the third electrode finger 516 is configured to have no hammer in the second region 512 and the third region 514. The second electrode structure 504 may include a fourth electrode finger 518 adjacent to the second electrode finger 508, wherein the fourth electrode finger 518 may have a hammer in the second region 512 and the third region 514.

[0070] refer to Figure 5FThe first electrode finger 506, the third electrode finger 516, and the fourth electrode finger 518 can be configured to not have hammers in the second region 512 and the third region 514. The second electrode finger 508 can be configured to have hammers in the second region 512 and the third region 514. That is, the second electrode finger 508 can have a different width and / or height in the first region 510 than it does in the second region 512 and the third region 514. The first electrode finger 506, the third electrode finger 516, and the fourth electrode finger 518 can have the same width and height in the first region 510, the second region 512, and the third region 514. That is, the width or height of the first electrode finger 506, the third electrode finger 516, and the fourth electrode finger 518 in the second region 512 and the third region 514 can be smaller than the corresponding width or height of the second electrode finger 508 in the second region 512 and the third region 514.

[0071] Figures 5A-5F The piston-mode waveguide arrangement shown is merely an example to facilitate understanding of this disclosure. Various aspects of the piston-mode waveguide arrangement in the transition region and / or other regions can be combined or modified, supplementing or replacing the illustrated example. Although Figures 5A-5F The example shown herein is described in relation to a piston-mode waveguide arrangement in a transition region to facilitate understanding, but aspects of this disclosure can also be applied to the selective withdrawal of the hammer in other regions, such as within or between electrode structures.

[0072] In some respects, electroacoustic devices can be implemented using a single IDT. Figure 6 This is a top view of an example electroacoustic device 600 having specific electrode fingers without a piston-mode hammer according to certain aspects of this disclosure. The electroacoustic device 600 includes an IDT 602 arranged between a first reflector 604 and a second reflector 606. An electrical input terminal 608 can be electrically coupled to a first busbar 612 of the IDT 602, and an electrical output terminal 610 can be electrically coupled to a second busbar 614 of the IDT 602. In this example, the IDT 602 and the first reflector 604 have electrode fingers without hammers in the IDT reflector transition between the two IDTs, and the IDT 602 has another electrode finger with a hammer in the IDT reflector transition between the IDT 602 and the second reflector 606.

[0073] In some cases, the electroacoustic devices(s) described herein can be implemented in electroacoustic filters. For example, Figure 7This is a schematic diagram of an electroacoustic filter circuit 700, which may include an electroacoustic device (e.g., electroacoustic device 200) having specific electrode fingers without a piston-mode hammerhead. The filter circuit 700 provides an example in which the electroacoustic device 200 can be used. The filter circuit 700 includes an input terminal 702 and an output terminal 714. A ladder network of SAW resonators is disposed between the input terminal 702 and the output terminal 714. The filter circuit 700 includes a first SAW resonator 704, a second SAW resonator 706, and a third SAW resonator 708, all of which are electrically connected in series between the input terminal 702 and the output terminal 714. A fourth SAW resonator 710 (e.g., a shunt resonator) has a first terminal connected between the first SAW resonator 704 and the second SAW resonator 706 and a second terminal connected to a ground potential node. The fifth SAW resonator 712 (e.g., a shunt resonator) has a first terminal connected between the second SAW resonator 706 and the third SAW resonator 708 and a second terminal connected to a ground potential node. In some cases, the fourth resonator 710 or the fifth SAW resonator 712 may be connected to the ground potential node via other circuit elements (such as inductors, capacitors, or combinations thereof). The electroacoustic filter circuit 700 may, for example, be a bandpass circuit having a passband with a selected frequency range (e.g., between 500 MHz and 7 GHz).

[0074] Figure 8 This is a flowchart illustrating an example operation 800 for manufacturing an electroacoustic device (e.g., electroacoustic device 200) according to certain aspects of this disclosure. Operation 800 can be performed, for example, by an electroacoustic device manufacturing facility.

[0075] At block 802, operation 800 may begin by forming a first electrode structure (e.g., first electrode structure 204) over a piezoelectric material (e.g., piezoelectric material 202). The formation of the first electrode structure may include forming a plurality of first electrode fingers (e.g., a plurality of first electrode fingers 206) disposed within an active region (e.g., active region 208) having a first region (e.g., first region 210) and a second region (e.g., second region 212). The formation of the plurality of first electrode fingers may include forming at least one first electrode finger (e.g., a first hammerhead electrode finger 216) having a different width and / or a different height in the first region than in the second region, and forming a first electrode finger (e.g., first electrode finger 218) having the same width and height in both the first and second regions. In some aspects, forming a first electrode finger at block 802 may include forming a first electrode finger in the second region with a width and / or height smaller than the corresponding width and / or height of another electrode finger in the second region.

[0076] Forming the first electrode finger at block 802 may include additive or subtractive processes. In some aspects, the first electrode finger can be formed without one or more hammers by selectively patterning and depositing conductive material. For example, all of the plurality of first electrode fingers can be formed without hammers, and an additive process can be performed to selectively deposit additional conductive material for hammers in a subset of the plurality of first electrode fingers. In some cases, all of the plurality of first electrode fingers can be formed with hammers, and the first electrode fingers can be formed without one or more hammers by a subtractive process. For example, one or more hammers can be selectively removed from some of the plurality of first electrode fingers. As used herein, an electrode finger formed without hammers can refer to these additive or subtractive processes.

[0077] At block 804, a second electrode structure (e.g., second electrode structure 220) may be formed above the piezoelectric material adjacent to the first electrode structure. The formation of the second electrode structure may include forming a plurality of second electrode fingers (e.g., a plurality of second electrode fingers 248) disposed within the active region. The formation of the plurality of second electrode fingers may include forming at least one second electrode finger (e.g., a second hammerhead electrode finger 250) in the first region having a different width and / or a different height than in the plurality of second regions, and forming a second electrode finger (e.g., a second electrode finger 252) adjacent to the first electrode finger, wherein the plurality of second electrode fingers may be one of the second electrode fingers.

[0078] In some aspects, the first electrode structure may be an IDT, such that a plurality of first electrode fingers are arranged in an interdigitated manner at block 802. In some aspects, the second electrode structure may be an IDT or a reflector grating.

[0079] In some aspects, the hammerhead can be formed as a piston-mode waveguide structure along a plurality of first electrode fingers and / or a plurality of second electrode fingers. For example, the active region may include a third region (e.g., third region 214). The first region may be disposed between the second and third regions. Forming a plurality of first electrode fingers in block 802 may include forming most of the plurality of first electrode fingers and / or most of the plurality of second electrode fingers to have a larger width and a larger height in the second and third regions than in the first region, such that the first electrode structure includes a piston-mode electrode structure, for example, as Figure 2A As shown.

[0080] In some respects, the electroacoustic devices described herein can be used in various circuits (such as radio frequency (RF) transceivers), for example as electroacoustic filters or duplexers. Figure 9This is a block diagram of an example RF transceiver 900 according to certain aspects of this disclosure. The RF transceiver 900 includes at least one transmit (TX) path 902 (also referred to as a transmit chain) for transmitting signals via one or more antennas 906 and at least one receive (RX) path 904 (also referred to as a receive chain) for receiving signals via antennas 906. When the TX path 902 and RX path 904 share antenna 906, these paths can be connected to the antenna via an interface 908, which may include any of a variety of suitable RF devices, such as an electroacoustic filter 938 (e.g., electroacoustic filter circuit 700), a duplexer (which may include a SAW resonator), an antenna sharer, a multiplexer, etc.

[0081] Receiving in-phase (I) or quadrature (Q) baseband analog signals from a digital-to-analog converter (DAC) 910, the TX path 902 may include a baseband filter (BBF) 912, a mixer 914, a driver amplifier (DA) 916, and a power amplifier (PA) 918. In some respects, the BBF 912, mixer 914, and DA 916 may be included in a semiconductor device such as a radio frequency integrated circuit (RFIC), while the PA 918 may be external to that semiconductor device.

[0082] The BBF 912 filters the baseband signal received from the DAC 910, and the mixer 914 mixes the filtered baseband signal with the transmission local oscillator (LO) signal to convert the baseband signal of interest to a different frequency (e.g., up-converting from baseband to radio frequency). This frequency conversion process produces a sum and difference frequency between the LO frequency and the frequency of the baseband signal of interest. This sum and difference frequency is called the beat frequency. The beat frequency is typically in the RF range, such that the signal output from the mixer 914 is typically an RF signal, which can be amplified by the DA 916 and / or PA 918 before being transmitted by the antenna 906. In some cases, the BBF 912 can be implemented using an electroacoustic filter with a SAW resonator (e.g., electroacoustic filter circuit 700).

[0083] The RX path 904 may include a low-noise amplifier (LNA) 924, a filter 926, a mixer 928, and a baseband filter (BBF) 930. The LNA 924, filter 926, mixer 928, and BBF 930 may be included in an RFIC, which may or may not be the same RFIC that includes the TX path components. The RF signal received via antenna 906 may be amplified by the LNA 924 and filtered by the filter 926, and the mixer 928 mixes the amplified RF signal with a received local oscillator (LO) signal to convert the RF signal of interest to a different baseband frequency (e.g., down-conversion). The baseband signal output from the mixer 928 may be filtered by the BBF 930 before being converted into digital I or Q signals for digital signal processing by an analog-to-digital converter (ADC) 932. In some cases, the filter 926 and / or the BBF 930 may be implemented using an electroacoustic filter with a SAW resonator (e.g., electroacoustic filter circuit 700).

[0084] Some systems can employ a frequency synthesizer with a voltage-controlled oscillator (VCO) to generate a stable, tunable LO with a specific tuning range. Therefore, the transmit LO can be generated by the TX frequency synthesizer 920, which can be buffered or amplified by the amplifier 922 before being mixed with the baseband signal in the mixer 914. Similarly, the receive LO can be generated by the RX frequency synthesizer 934, which can be buffered or amplified by the amplifier 936 before being mixed with the RF signal in the mixer 928.

[0085] Figure 10 This is a diagram of an environment 1000 including a wireless communication device 1002, the wireless communication device 1002 having, for example... Figure 9 The RF transceiver 900 and other wireless transceivers 1022 are used. In environment 1000, wireless communication device 1002 communicates with base station 1004 via wireless link 1006. As shown, wireless communication device 1002 is depicted as a smartphone. However, electronic wireless communication device 1002 can be implemented as any suitable computing or other electronic device, such as cellular base station, broadband router, access point, cellular or mobile phone, gaming device, navigation device, media device, laptop computer, desktop computer, tablet computer, server computer, network-connected storage (NAS) device, smart device, vehicle-based communication system, Internet of Things (IoT) device, sensor or security device, asset tracker, etc.

[0086] Base station 1004 communicates with wireless communication device 1002 via wireless link 1006, which can be implemented as any suitable type of wireless link. Although base station 1004 is depicted as a base station tower of a cellular radio network, base station 1004 can represent or be implemented as another device, such as a satellite, terrestrial broadcast tower, access point, peer-to-peer device, mesh network node, fiber optic line, or other electronic device as described above. Therefore, wireless communication device 1002 can communicate with base station 1004 or another device via a wired connection, a wireless connection, or a combination thereof. Wireless link 1006 may include a downlink for transmitting data or control information from base station 1004 to wireless communication device 1002, and an uplink for transmitting other data or control information from wireless communication device 1002 to base station 1004. Wireless Link 1006 can be implemented using any suitable communication protocol or standard, such as 3GPP LTE, 3GPP New Radio 5G (NR5G), IEEE 802.11 (WiFi), IEEE 802.16 (WiMAX), Bluetooth. TM wait.

[0087] Wireless communication device 1002 includes a processor 1008 and a memory 1010. The memory 1010 may be a computer-readable storage medium or form part thereof. The processor 1008 may include any type of processor, such as an application processor or a multi-core processor, configured to execute processor-executable instructions (e.g., code) stored in the memory 1010. The memory 1010 may include any suitable type of data storage medium, such as volatile memory (e.g., random access memory (RAM)), non-volatile memory (e.g., flash memory), optical media, magnetic media (e.g., magnetic disks or magnetic tapes), etc. In the context of this disclosure, the memory 1010 is implemented to store instructions 1012, data 1014, and other information of the wireless communication device 1002, and therefore, when configured as a computer-readable storage medium or part thereof, the memory 1010 does not include transient propagation signals or carriers. That is, the memory 1010 may include non-transitory computer-readable media (e.g., tangible media).

[0088] The wireless communication device 1002 may also include an input / output port 1016. The I / O port 1016 enables data exchange or interaction with other devices, networks, or users, or between components of the device.

[0089] The wireless communication device 1002 may also include a signal processor (SP) 1018 (e.g., a digital signal processor (DSP)). The signal processor 1018 may function similarly to the processor 1008, and the signal processor 1018 may be combined with the memory 1010 to execute instructions and / or process information.

[0090] For communication purposes, the wireless communication device 1002 also includes a modem 1020, a wireless transceiver 1022, and an antenna (not shown). The wireless transceiver 1022 uses RF wireless signals to provide connectivity to a corresponding network and other wireless communication devices connected thereto, and may include... Figure 9 The RF transceiver 900. The wireless transceiver 1022 can facilitate communication over any suitable type of wireless network, such as wireless local area network (WLAN), peer-to-peer (P2P) network, mesh network, cellular network, wireless wide area network (WWAN), navigation network (e.g., North American Global Positioning System (GPS) or another Global Navigation Satellite System (GNSS)), and / or wireless personal area network (WPAN).

[0091] In addition to the aspects mentioned above, aspects of specific combinations are also within the scope of this disclosure, some of which are detailed below:

[0092] Aspect 1. An electroacoustic device, comprising: a piezoelectric material; and a first electrode structure disposed above the piezoelectric material, the first electrode structure comprising a plurality of first electrode fingers arranged in an active region having a first region and a second region, wherein: at least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to that in the second region; and the plurality of first electrode fingers includes a first electrode finger whose width or height in the second region is less than the corresponding width or height of the at least one of the plurality of first electrode fingers in the second region.

[0093] Aspect 2. The electroacoustic device according to aspect 1, wherein the at least one of the plurality of first electrode fingers is a majority of the plurality of first electrode fingers.

[0094] Aspect 3. The electroacoustic device according to aspect 1 or 2, wherein the plurality of first electrode fingers are arranged in an interdigitated manner.

[0095] Aspect 4. The electroacoustic device according to any one of Aspects 1 to 3 further includes a second electrode structure disposed above the piezoelectric material and adjacent to the first electrode structure, the second electrode structure including a plurality of second electrode fingers arranged in the active region, wherein: at least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to the second region; and the plurality of second electrode fingers includes a second electrode finger disposed adjacent to the first electrode finger of the first electrode structure.

[0096] Aspect 5. The electroacoustic device according to aspect 4, wherein the width or height of the plurality of second electrode fingers in the second region is less than the corresponding width or height of at least one of the second electrode fingers in the second region.

[0097] Aspect 6. The electroacoustic device according to aspect 4 or 5, wherein the first electrode is coupled to a first node configured to have a first voltage, wherein the second electrode is coupled to a second node configured to have a second voltage, and wherein the first voltage is different from the second voltage.

[0098] Aspect 7. The electroacoustic device according to aspect 6, wherein the plurality of first electrode fingers includes a third electrode finger, the third electrode finger being arranged adjacent to the first electrode fingers and coupled to a third node configured to have a reference voltage, and wherein the reference voltage is different from the first voltage and the second voltage.

[0099] Aspect 8. The electroacoustic device according to any one of Aspects 4 to 7, wherein: the plurality of first electrode fingers have a first interval between the plurality of first electrode fingers; the plurality of second electrode fingers have a second interval between the plurality of second electrode fingers; and the first electrode fingers and the second electrode fingers are spaced apart by a third interval different from the first interval and the second interval.

[0100] Aspect 9. The electroacoustic device according to aspect 8, wherein the third interval is smaller than at least one of the first interval or the second interval.

[0101] Aspect 10. The electroacoustic device according to any one of Aspects 4 to 9, wherein the second electrode structure is a reflector grating.

[0102] Aspect 11. The electroacoustic device according to any one of aspects 4 to 9, wherein the plurality of second electrode fingers are arranged in an interdigitated manner.

[0103] Aspect 12. The electroacoustic device according to any one of aspects 1 to 11, wherein at least one of the plurality of first electrode fingers has a greater width and a greater height in the second region than in the first region.

[0104] Aspect 13. The electroacoustic device according to any one of Aspects 4 to 12, wherein at least one of the following: most of the plurality of first electrode fingers have a greater width and greater height in the second region compared to the first region; or most of the plurality of second electrode fingers have a greater width and greater height in the second region compared to the first region.

[0105] Aspect 14. The electroacoustic device according to any one of Aspects 1 to 13, wherein the electroacoustic device is a surface acoustic wave resonator.

[0106] Aspect 15. The electroacoustic device according to any one of Aspects 4 to 14, wherein: the active region includes a third region; the first region is disposed between the second region and the third region; at least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to the third region; and at least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to the third region.

[0107] Aspect 16. The electroacoustic device according to aspect 15, wherein most of the plurality of first electrode fingers have a greater width and a greater height in the second region and the third region than in the first region, such that the first electrode structure comprises a piston-mode electrode structure.

[0108] Aspect 17. The electroacoustic device according to aspect 15, wherein: the width or height of the first electrode finger in the second region and the third region is less than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region and the third region; and the second electrode finger in the first region has at least one of a different width or a different height compared to that in the second region and the third region.

[0109] Aspect 18. The electroacoustic device according to aspect 15, wherein: the width or height of the first electrode finger in the second region is less than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region, and the first electrode finger has a different width or height in the first region than in the third region; and the width or height of the second electrode finger in the third region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the third region, and the second electrode finger has a different width and height in the first region than in the second region.

[0110] Aspect 19. The electroacoustic device according to aspect 15, wherein: the width or height of the first electrode finger in the second region and the third region is less than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region and the third region; and the width or height of the second electrode finger in the second region and the third region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the second region and the third region.

[0111] Aspect 20. The electroacoustic device according to aspect 15 further includes a third electrode finger arranged adjacent to the first electrode finger or the second electrode finger, wherein the width or height of the third electrode finger in at least one of the second region or the third region is less than the corresponding width or height of the other electrode finger in the second region or the third region.

[0112] Aspect 21. The electroacoustic device according to aspect 20 further includes a fourth electrode finger arranged adjacent to the second electrode finger, wherein: the first electrode finger has at least one of a different width or a different height in the first region compared to the second region and the third region; the width or height of the second electrode finger in the second region and the third region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the second region and the third region; the third electrode finger is arranged adjacent to the first electrode finger; and the width or height of the fourth electrode finger in at least one of the second region or the third region is less than the corresponding width or height of the other electrode finger in the second region or the third region.

[0113] Aspect 22. An electroacoustic device, comprising: a piezoelectric material; and a first electrode structure disposed above the piezoelectric material, the first electrode structure including a plurality of first electrode fingers arranged in an active region having a first region and a second region, wherein at least one of the plurality of first electrode fingers has a width or height different in the first region than in the second region, and wherein the plurality of first electrode fingers includes a first electrode finger whose width or height in the second region is smaller than that of the first electrode finger of the plurality of first electrode fingers in the second region.

[0114] Aspect 23. The electroacoustic device according to aspect 22 further includes a second electrode structure disposed above the piezoelectric material and adjacent to the first electrode structure, the second electrode structure including a plurality of second electrode fingers arranged in the active region, wherein at least one of the plurality of second electrode fingers has a different width or height in the first region than in the second region, and wherein the plurality of second electrode fingers includes a second electrode finger disposed adjacent to the first electrode finger of the first electrode structure.

[0115] Aspect 24. The electroacoustic device according to aspect 23, wherein the width or height of the second electrode finger in the second region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the second region.

[0116] Aspect 25. The electroacoustic device according to aspect 23 or 24, wherein: the active region includes a third region; the first region is disposed between the second region and the third region; at least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to the third region; and at least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to the third region.

[0117] Aspect 26. The electroacoustic device according to any one of Aspects 23 to 25, wherein: the width or height of the first electrode finger in the second region is less than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region, and has at least one of a different width or a different height in the first region compared to the third region; and the width or height of the second electrode finger in the third region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the third region, and has at least one of a different width or a different height in the first region compared to the second region.

[0118] Aspect 27. A method of manufacturing an electroacoustic device, comprising: forming a first electrode structure over a piezoelectric material, wherein forming the first electrode structure includes forming a plurality of first electrode fingers disposed in an active region having a first region and a second region, wherein forming the plurality of first electrode fingers includes: forming at least one of the plurality of first electrode fingers having at least one of a different width or a different height in the first region compared to that in the second region; and forming a first electrode finger in the second region having a width or height smaller than the corresponding width or height of the at least one of the plurality of first electrode fingers in the second region.

[0119] Aspect 28. The method according to aspect 27, wherein forming the plurality of first electrode fingers includes forming the plurality of first electrode fingers arranged in an interdigitated manner.

[0120] Aspect 29. The method according to aspect 28 further includes: forming a second electrode structure adjacent to the first electrode structure above the piezoelectric material, wherein forming the second electrode structure includes forming a plurality of second electrode fingers disposed in the active region, wherein forming the plurality of second electrode fingers includes: forming at least one of the plurality of second electrode fingers having at least one of a different width or a different height in the first region compared to the second region; and forming a second electrode finger adjacent to the first electrode finger, the second electrode finger being one of the plurality of second electrode fingers.

[0121] Aspect 30. The method according to aspect 29, wherein: the active region includes a third region; the first region is disposed between the second region and the third region; and forming the plurality of first electrode fingers includes forming most of the plurality of first electrode fingers to have a greater width and a greater height in the second region and the third region than in the first region, such that the first electrode structure includes a piston-mode electrode structure.

[0122] The following description provides examples of electroacoustic devices for various filtering applications and does not limit the scope, applicability, or examples set forth in the claims. Changes may be made to the function and arrangement of the elements discussed without departing from the scope of this disclosure. Various processes or components may be appropriately omitted, substituted, or added to the various examples. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Furthermore, features described with respect to some examples may be combined in some other examples. For example, any number of aspects set forth herein may be used to implement an apparatus or practice. Moreover, the scope of this disclosure is intended to cover an apparatus or method practiced using other structures, functions, or structures and functions as a supplement to or alternative to the various aspects of this disclosure set forth herein. It should be understood that any aspect of this disclosure disclosed herein may be embodied by one or more elements of the claims. The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any aspect described herein as “exemplary” is not necessarily to be construed as more preferred or advantageous than other aspects.

[0123] The methods disclosed herein include one or more steps or actions for implementing these methods. These method steps and / or actions may be interchanged with each other without departing from the scope of the claims. In other words, unless a specific order of steps or actions is specified, the order and / or use of a particular step and / or action may be modified without departing from the scope of the claims.

[0124] As used herein, the phrase “at least one” in a list of items refers to any combination of these items, including a single member. For example, “at least one of a, b, or c” is intended to cover a, b, c, ab, ac, bc, and abc, as well as any combination of multiples of the same element (e.g., aa, aaa, aab, aac, abb, acc, bb, bbb, bbc, cc, and ccc, or any other ordering of a, b, and c).

[0125] The preceding description is provided to enable any person skilled in the art to practice the various aspects described herein. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects. Therefore, the claims are not intended to be limited to the aspects shown herein, but should be given the full scope consistent with the language of the claims, wherein, unless specifically stated otherwise, reference to an element in the singular does not mean “one and only one,” but rather “one or more.” Unless otherwise specifically stated otherwise, the term “some” means one or more. All structural and functional equivalents of elements known or hereafter known to a person skilled in the art throughout the various aspects described in this disclosure are expressly incorporated herein by reference and are intended to be covered by the claims. Furthermore, nothing disclosed herein is intended specifically for public use, regardless of whether such disclosure is expressly stated in the claims. No element of a claim may be interpreted pursuant to section 112(f) of 35 U.S.C., unless the element is expressly stated using the phrase “means for,” or, in the case of a method claim, using the phrase “step for.”

[0126] It should be understood that the claims are not limited to the precise configuration and components described above. Various modifications, alterations, and variations may be made to the arrangement, operation, and details of the methods and apparatus described above without departing from the scope of the claims.

Claims

1. An electroacoustic device, comprising: piezoelectric materials; A first electrode structure is disposed above the piezoelectric material. The first electrode structure includes a plurality of first electrode fingers arranged within an active region, the active region having a first region and a second region, wherein: At least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to that in the second region; and The plurality of first electrode fingers includes a first electrode finger whose width or height in the second region is smaller than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region; and A second electrode structure is disposed above the piezoelectric material and adjacent to the first electrode structure. The second electrode structure includes a plurality of second electrode fingers arranged in the active region, wherein: At least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to its position in the second region; and The plurality of second electrode fingers includes second electrode fingers disposed adjacent to the first electrode fingers of the first electrode structure; and wherein... The plurality of first electrode fingers have a first interval between the plurality of first electrode fingers; The plurality of second electrode fingers have a second interval between the plurality of second electrode fingers; and The first electrode finger and the second electrode finger are separated by a third interval, which is different from the first interval and the second interval.

2. The electroacoustic device according to claim 1, wherein the at least one first electrode finger among the plurality of first electrode fingers is a majority of the plurality of first electrode fingers.

3. The electroacoustic device according to claim 1, wherein the plurality of first electrode fingers are arranged in an interdigitated manner.

4. The electroacoustic device according to claim 1, wherein the width or height of the second electrode finger in the second region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the second region.

5. The electroacoustic device of claim 1, wherein the first electrode is coupled to a first node configured to have a first voltage, wherein the second electrode is coupled to a second node configured to have a second voltage, and wherein the first voltage is different from the second voltage.

6. The electroacoustic device of claim 5, wherein the plurality of first electrode fingers includes a third electrode finger, the third electrode finger being arranged adjacent to the first electrode fingers and coupled to a third node configured to have a reference voltage, and wherein the reference voltage is different from the first voltage and the second voltage.

7. The electroacoustic device according to claim 1, wherein the third interval is smaller than at least one of the first interval or the second interval.

8. The electroacoustic device according to claim 1, wherein the second electrode structure is a reflector grating.

9. The electroacoustic device according to claim 1, wherein the plurality of second electrode fingers are arranged in an interdigitated manner.

10. The electroacoustic device of claim 1, wherein at least one of the plurality of first electrode fingers has a greater width and a greater height in the second region than in the first region.

11. The electroacoustic device according to claim 1, wherein at least one of the following: Most of the plurality of first electrode fingers have a greater width and greater height in the second region compared to their position in the first region; or Most of the plurality of second electrode fingers have a greater width and greater height in the second region compared to the first region.

12. The electroacoustic device according to claim 3, wherein the electroacoustic device is a surface acoustic wave resonator.

13. The electroacoustic device according to claim 1, wherein: The active region includes a third region; The first region is located between the second region and the third region; At least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to that in the third region; and At least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to that in the third region.

14. The electroacoustic device of claim 13, wherein most of the plurality of first electrode fingers have a greater width and greater height in the second region and the third region than in the first region, such that the first electrode structure comprises a piston-mode electrode structure.

15. The electroacoustic device according to claim 13, wherein: The width or height of the first electrode finger in the second region and the third region is smaller than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region and the third region; and The second electrode refers to having at least one of a different width or a different height in the first region compared to the second region and the third region.

16. The electroacoustic device according to claim 13, wherein: The width or height of the first electrode finger in the second region is smaller than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region, and the first electrode finger in the first region has a different width or height compared to that in the third region; and The width or height of the second electrode finger in the third region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the third region, and the second electrode finger has a different width and height in the first region compared to that in the second region.

17. The electroacoustic device according to claim 13, wherein: The width or height of the first electrode finger in the second region and the third region is smaller than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region and the third region; and The width or height of the second electrode finger in the second region and the third region is less than the corresponding width or height of at least one of the plurality of second electrode fingers in the second region and the third region.

18. The electroacoustic device of claim 13, further comprising a third electrode finger arranged adjacent to the first electrode finger or the second electrode finger, wherein the width or height of the third electrode finger in at least one of the second region or the third region is less than the corresponding width or height of the other electrode finger in the second region or the third region.

19. The electroacoustic device of claim 18, further comprising a fourth electrode finger arranged adjacent to the second electrode finger, wherein: The first electrode refers to having at least one of a different width or a different height in the first region compared to the second region and the third region; The width or height of the second electrode finger in the second region and the third region is smaller than the corresponding width or height of at least one of the plurality of second electrode fingers in the second region and the third region; The third electrode finger is arranged adjacent to the first electrode finger; and The width or height of the fourth electrode in at least one of the second region or the third region is less than the corresponding width or height of the other electrode in the second region or the third region.

20. A method for manufacturing an electroacoustic device, comprising: A first electrode structure is formed above a piezoelectric material, wherein forming the first electrode structure includes forming a plurality of first electrode fingers arranged in an active region, the active region having a first region and a second region, wherein forming the plurality of first electrode fingers includes: Forming at least one of the plurality of first electrode fingers, having at least one of a different width or a different height in the first region compared to the second region; and A first electrode finger is formed such that its width or height in the second region is smaller than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region; and A second electrode structure is formed above the piezoelectric material and adjacent to the first electrode structure, wherein forming the second electrode structure includes forming a plurality of second electrode fingers disposed within the active region, wherein forming the plurality of second electrode fingers includes: Forming at least one of the plurality of second electrode fingers, having at least one of a different width or a different height in the first region compared to that in the second region; and A second electrode finger is formed adjacent to the first electrode finger of the first electrode structure, wherein, The plurality of first electrode fingers are formed to have a first interval between the plurality of first electrode fingers; The plurality of second electrode fingers are formed to have a second interval between the plurality of second electrode fingers; and The first electrode finger is formed to be spaced apart from the second electrode finger by a third interval different from the first interval and the second interval.

21. The method of claim 20, wherein forming the plurality of first electrode fingers includes forming the plurality of first electrode fingers arranged in an interdigitated manner.

22. The method of claim 20, wherein: The active region includes a third region; The first region is positioned between the second region and the third region; and Forming the plurality of first electrode fingers includes forming most of the plurality of first electrode fingers to have a greater width and a greater height in the second region and the third region compared to in the first region, such that the first electrode structure includes a piston-mode electrode structure.

23. An electroacoustic device, comprising: piezoelectric materials; A first electrode structure is disposed above the piezoelectric material. The first electrode structure includes a plurality of first electrode fingers arranged within an active region, the active region having a first region and a second region, wherein: At least one of the plurality of first electrode fingers has at least one of a different width or a different height in the first region compared to that in the second region; and The plurality of first electrode fingers includes a first electrode finger whose width or height in the second region is smaller than the corresponding width or height of at least one of the plurality of first electrode fingers in the second region; and A second electrode structure is disposed above the piezoelectric material and adjacent to the first electrode structure. The second electrode structure includes a plurality of second electrode fingers arranged in the active region, wherein: At least one of the plurality of second electrode fingers has at least one of a different width or a different height in the first region compared to its position in the second region; and The plurality of second electrode fingers includes second electrode fingers disposed adjacent to the first electrode fingers of the first electrode structure; and... The first electrode is coupled to a first node configured to have a first voltage, the second electrode is coupled to a second node configured to have a second voltage, and the first voltage is different from the second voltage; and The plurality of first electrode fingers includes a third electrode finger arranged adjacent to the first electrode fingers and coupled to a third node configured to have a reference voltage, wherein the reference voltage is different from the first voltage and the second voltage.

24. The electroacoustic device of claim 23, wherein the at least one of the plurality of first electrode fingers is a majority of the plurality of first electrode fingers.

25. The electroacoustic device of claim 23, wherein the plurality of first electrode fingers are arranged in an interdigitated manner.

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