Method of manufacturing a ball cap conductive ring
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-02
- Publication Date
- 2026-08-11
AI Technical Summary
这种粘胶贴附电极片的方式存在的主要问题电极片本身电阻较大、可控变化不灵活
[0007]本公开的有益效果如下:在本公开的球罩导电环加工方法中,通过用球罩固定工装将球罩固定以形成中空空间以及形成使球罩的内球面的一部分露出的镀膜间隙、通过将具有能够环形溅射的溅射面的溅射靶安装在真空溅射镀膜机的靶材基座上,通过使球罩固定工装和溅射靶相对彼此运动以使溅射靶的溅射部伸入球罩固定工装的中空空间中,再通过从溅射面被轰击处的溅射靶的粒子在镀膜间隙进行沉积镀膜以形成导电环,能够通过真空镀膜方式在球罩的内球面上加工导电环,与背景技术通过粘胶贴附电极片的方式获得导电环相比,真空镀膜方式能提高导电环设置在球罩上的附着稳固性,由于真空镀膜方式能够可以灵活地控制沉积镀膜的厚度,所以真空镀膜方式能使得设置在球罩上的导电环的电阻可控且变化灵活。
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Figure CN116695074B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of spherical cover processing, and more specifically to a method for processing a spherical cover conductive ring. Background Technology
[0002] Zinc sulfide materials exhibit excellent transmittance and low absorption coefficient in the visible light range of 0.4 μm to far-infrared 12 μm, making them widely used in infrared detector windows and missile fairings. Zinc sulfide domes are commonly used as missile fairings, and their internal sidewalls require conductive rings for signal conversion.
[0003] Traditional conductive ring manufacturing involves attaching electrode sheets with adhesive. The main problems with this method are the high resistance of the electrode sheets themselves and the lack of flexibility in controlling their variation. Furthermore, the adhesive bonding provides poor stability. Summary of the Invention
[0004] In view of the problems existing in the background art, one object of this disclosure is to provide a method for processing a spherical conductive ring, which can improve the adhesion stability of the conductive ring on the spherical cover.
[0005] Another objective of this disclosure is to provide a method for processing a spherical conductive ring, which enables the resistance of the conductive ring disposed on the spherical cover to be controllable and flexible.
[0006] Therefore, a method for processing a conductive ring with a spherical cover includes the following steps: Step 1, in the vacuum chamber of a vacuum sputtering coating machine, a spherical cover is fixed using a spherical cover fixing fixture to form a hollow space and a coating gap that exposes a portion of the inner spherical surface of the spherical cover; Step 2, a sputtering target is installed on a target base of the vacuum sputtering coating machine, the sputtering target having a sputtering surface capable of annular sputtering; Step 3, the spherical cover fixing fixture and the sputtering target are moved relative to each other so that the sputtering part of the sputtering target extends into the hollow space of the spherical cover fixing fixture; Step 4, the vacuum chamber is closed and a vacuum is evacuated; Step 5, the sputtering power supply and sputtering gas are started, and the sputtering gas bombards the sputtering surface of the sputtering target so that particles from the sputtering target at the point where the sputtering surface is bombarded are deposited in the coating gap to form a conductive ring; Step 6, after the coating is completed, the spherical cover fixing fixture is removed from the vacuum chamber and the spherical cover with the formed conductive ring is removed from the spherical cover fixing fixture.
[0007] The beneficial effects of this disclosure are as follows: In the spherical conductive ring processing method of this disclosure, a spherical cover is fixed by a spherical cover fixing fixture to form a hollow space and a coating gap that exposes a portion of the inner spherical surface of the spherical cover; a sputtering target with a sputtering surface capable of annular sputtering is mounted on a target base of a vacuum sputtering coating machine; the spherical cover fixing fixture and the sputtering target are moved relative to each other to allow the sputtering part of the sputtering target to extend into the hollow space of the spherical cover fixing fixture; and a conductive ring is formed by depositing particles from the sputtering target at the point where the sputtering surface is bombarded in the coating gap. The conductive ring can be processed on the inner spherical surface of the spherical cover by vacuum coating. Compared with the prior art of obtaining conductive rings by adhesively attaching electrode sheets, the vacuum coating method can improve the adhesion stability of the conductive ring on the spherical cover. Since the vacuum coating method can flexibly control the thickness of the deposited coating, the resistance of the conductive ring on the spherical cover can be controlled and varied flexibly. Attached Figure Description
[0008] Figure 1 This is a schematic diagram of a vacuum sputtering coating machine used in the ball-shaped conductive ring processing method according to this disclosure.
[0009] Figure 2 This is a fully exploded perspective view of an embodiment of the spherical cover fixing fixture used in the spherical cover conductive ring processing method.
[0010] Figure 3 yes Figure 2 A three-dimensional exploded view from another angle.
[0011] Figure 4 This is a top view of the positioning plate of the spherical cover fixing fixture.
[0012] Figure 5 This is a three-dimensional sectional view of the spherical cover fixing fixture.
[0013] Figure 6 This is a perspective view of an embodiment of the sputtering target used in the spherical conductive ring processing method.
[0014] Figure 7 yes Figure 6 A sectional view.
[0015] Figure 8 This is a schematic diagram of a spherical cover that forms a conductive ring.
[0016] Figure 9 This is a photograph of the resistance test of the conductive ring in Example 1.
[0017] The reference numerals in the attached figures are explained as follows:
[0018] 100 Vacuum Sputtering Coating Machine with 3 Bases
[0019] 100A vacuum chamber 31 flange
[0020] 100b target base 311 threaded hole
[0021] 200 spherical cover fixing fixture 32 seats
[0022] D-axis 321 support surface
[0023] 1. Top cover 322 through hole
[0024] 11 Ring-shaped part 4 positioning parts
[0025] 111 Receiving slot 5 centering screws
[0026] 111a Inner circumferential surface 6 fixing screws
[0027] 111b outer circumferential surface 300 spherical cover
[0028] 111c top surface 300a top
[0029] 112 Inner circumferential surface 300b Inner spherical surface
[0030] 112a base perimeter 300c outer spherical surface
[0031] 113 Plane 300d Top Surface
[0032] 114-ring groove 400 sputtering target
[0033] 115 threaded hole 400a sputtering section
[0034] 116 Hand-release slot 400a1 busbar
[0035] S hollow space 400a2 sputtering surface
[0036] 12 protrusions 400b axis
[0037] 121 First positioning hole θ included angle
[0038] 122 First centering screw hole 400c equal diameter section
[0039] 2 Positioning Plate 400d Mounting Flange
[0040] 21 outer periphery 400e hollow cavity
[0041] 22 Through Hole 400e1 First Rotating Body
[0042] 23 Second positioning hole 400e2 Second rotating body
[0043] 24 Second centering screw hole 400e3 Third rotating body
[0044] 25 Main body 400e4 Fourth rotating body
[0045] 251 perforated 400e5 fifth rotating body
[0046] 26 protrusions 400e6 sixth rotating body
[0047] 27 Lower chamfer 400f round chamfer
[0048] 28 with chamfered 500 conductive ring
[0049] G coating gap 500b coating disc Detailed Implementation
[0050] The accompanying drawings illustrate embodiments of this disclosure, and it will be understood that the disclosed embodiments are merely examples of this disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be construed as limiting, but are intended only as the basis for the claims and as an illustrative basis to teach those skilled in the art how to implement this disclosure in various ways.
[0051] [Method for fabricating a spherical conductive ring]
[0052] Reference Figure 1 The method for processing the spherical conductive ring according to this disclosure includes the following steps:
[0053] Step 1: In the vacuum chamber 100a of the vacuum sputtering coating machine 100, the spherical cover 300 is fixed with the spherical cover fixing fixture 200 to form a hollow space S and a coating gap G that exposes a part of the inner spherical surface 300b of the spherical cover 300.
[0054] Step 2: Install the sputtering target 400 on the target base 100b of the vacuum sputtering coating machine 100. The sputtering target 400 has a sputtering surface 400a2 capable of annular sputtering.
[0055] Step 3: Move the spherical cover fixing fixture 200 and the sputtering target 400 relative to each other so that the sputtering part 400a of the sputtering target 400 extends into the hollow space S of the spherical cover fixing fixture 200.
[0056] Step 4: Close vacuum chamber 100a and evacuate vacuum chamber 100a;
[0057] Step 5: Start the sputtering power supply and sputtering gas. The sputtering gas bombards the sputtering surface 400a2 of the sputtering target 400 so that the particles of the sputtering target 400 at the point where the sputtering surface 400a2 is bombarded are deposited in the coating gap G to form a conductive ring 500.
[0058] Step 6: After the plating is completed, remove the spherical cover fixing fixture 200 from the vacuum chamber 100a and remove the spherical cover 300 from the spherical cover fixing fixture 200, from which the conductive ring 500 has been formed.
[0059] In the spherical conductive ring processing method disclosed herein, a spherical cover 300 is fixed by a spherical cover fixing fixture 200 to form a hollow space S and a coating gap G is formed to expose a portion of the inner spherical surface 300b of the spherical cover 300. A sputtering target 400 having a sputtering surface 400a2 capable of annular sputtering is mounted on a target base 100b of a vacuum sputtering coating machine 100. The spherical cover fixing fixture 200 and the sputtering target 400 are moved relative to each other to allow the sputtering portion 400a of the sputtering target 400 to extend into the hollow space S of the spherical cover fixing fixture 200. Then, the sputtering portion 400a of the sputtering target 400 is extended from the sputtering surface... Particles from the sputtering target 400 at the bombardment site 400a2 are deposited in the coating gap G to form a conductive ring 500. The conductive ring 500 can be processed on the inner spherical surface 300b of the shroud 300 by vacuum coating. Compared with the prior art of obtaining conductive rings by adhesively attaching electrode sheets, vacuum coating can improve the adhesion stability of the conductive ring 500 on the shroud 300. Since the thickness of the deposited film can be flexibly controlled by vacuum coating, the resistance of the conductive ring 500 on the shroud 300 can be controlled and varied flexibly.
[0060] The 300 sphere cover can be, but is not limited to, zinc sulfide or zinc selenide sphere covers.
[0061] In one example, a transition layer is first deposited to form a resistive layer, and then a resistive layer is deposited. The process of depositing the transition layer first is carried out according to steps one to five. The material of the sputtering target 400 for depositing the transition layer first is the transition layer material, which is nickel, chromium, or a nickel-chromium alloy. Steps two to five are repeated for the process of depositing the resistive layer later. The material of the sputtering target 400 for depositing the resistive layer later is the resistive layer material, which is copper, silver, or gold.
[0062] Furthermore, in one example, the deposition time for the first layer to form the transition layer is 50-100 s; the deposition time for the subsequent layer to form the resistive layer is 2000-3000 s. Furthermore, in one example, the deposition rate for both the first and subsequent layers is 1-2 nm / s.
[0063] The movement of the spherical cover fixing fixture 200 and the sputtering target 400 relative to each other in step three can be implemented by providing a lifting mechanism (not shown) below the spherical cover fixing fixture 200 or by enabling the target base 100b of the vacuum sputtering coating machine 100 to be raised and lowered.
[0064] In one example, in step four, the vacuum level achieved by evacuation is 1.5 × 10⁻⁶. -3 Pa.
[0065] In one example, in step one, the shroud 300 is cleaned and wiped before being secured to the shroud fixture 200. The cleaning and wiping can be, for example, ultrasonic cleaning or manual wiping.
[0066] In one example, between step one and step two, the portion of the shroud 300 exposed at the coating gap G is also cleaned using the ion source of the vacuum sputtering coating machine 100.
[0067] [Spherical cover fixing fixture]
[0068] An embodiment of the spherical cover fixing fixture 200 is shown in Figures 2 to 5 middle.
[0069] The ball cover fixing fixture 200 includes an upper cover 1, a positioning plate 2, a base 3, a positioning component 4, a centering screw 5, and a fixing screw 6.
[0070] The top cover 1 is used to accommodate the top 300a of the spherical cover 300 to be plated with conductive rings, and the top cover 1 has a hollow space S that extends through along the axial direction D.
[0071] The upper cover 1 has an annular portion 11 and a protrusion 12.
[0072] The annular portion 11 has a receiving groove 111, an inner circumferential surface 112, a flat surface 113, an annular groove 114, an upper threaded hole 115, and a hand release groove 116.
[0073] The receiving groove 111 is used to receive the top 300a of the spherical cover 300 to be plated with a conductive ring. The receiving groove 111 has an annular inner circumferential surface 111a, an outer circumferential surface 111b, and a top surface 111c. The inner circumferential surface 111a is used to fit the inner spherical surface 300b at the top 300a of the spherical cover 300 to be plated with the conductive ring, which is received in the receiving groove 111. That is, the shapes of the inner circumferential surface 111a and the inner spherical surface 300b at the top 300a of the spherical cover 300 are mutually complementary. The outer circumferential surface 111b is radially opposite to the inner circumferential surface 111a. The outer circumferential surface 111b is used to avoid contact with the outer spherical surface 300c of the top 300a of the spherical cover 300. The length of the outer circumferential surface 111b along the axial direction D is greater than the length of the inner circumferential surface 111a along the axial direction D. The length of the outer circumferential surface 111b along the axial direction D is greater than the length of the inner circumferential surface 112 along the axial direction D. The top surface 111c is used to abut against the top surface 300d of the top 300a of the spherical cover 300.
[0074] The inner circumferential surface 112 forms a hollow space S that runs through the axial direction D. The inner circumferential surface 112 is inclined relative to the axial direction D and has a bottom perimeter 112a.
[0075] The inner circumferential surface 112 and the outer circumferential surface 111b are connected by a plane 113.
[0076] An annular groove 114 is provided on the outer periphery of the annular portion 11, and the annular groove 114 is provided for the operator's fingers to place and grasp the top cover 1.
[0077] Four threaded holes 115 pass through the annular portion 11 along the axial direction D and are evenly distributed along the circumferential direction.
[0078] Hand slots 116 are provided on the radially opposite sides of the receiving slot 111, and the hand slots 116 are for the operator's fingers to place and grasp the top 300b of the ball cover 300.
[0079] The protrusion 12 protrudes inward from the inner circumferential surface 112 of the annular portion 11, and the protrusion 12 can be detachably fixed to the positioning plate 2. The protrusion 12 is provided with two first positioning holes 121 and two first centering screw holes 122. The first positioning holes 121 and the first centering screw holes 122 penetrate the protrusion 12 along the axial direction D.
[0080] The top cover is a single piece of aluminum alloy.
[0081] The positioning plate 2 is used to be placed inside the top 300a of the ball cover 300 to be plated with the conductive ring. The positioning plate 2 can be detachably fixed to the top cover 1. The positioning plate 2 has a through hole 21, an outer periphery 22, two second positioning holes 23, two second centering screw holes 24, a main body 25, a protrusion 26, a lower chamfer 27, and an upper chamfer 28.
[0082] The through hole 21 extends through the positioning plate 2 along the axial direction D, so that the space enclosed by the inner spherical surface 300b of the top 300a of the spherical cover 300 is connected to the hollow space S of the annular portion 11. The through hole 21 is located at the center of the positioning plate 2.
[0083] The outer periphery 22 is used to: abut against the corresponding inner spherical surface 300b of the top 300a of the spherical cover 300 to be plated with the conductive ring, and to be spaced axially D from the bottom periphery 112a of the inner circumferential surface 112 of the annular portion 11 to form a plating gap G between the outer periphery 22 and the bottom periphery 112a of the inner circumferential surface 112 of the annular portion 11, which exposes a portion of the inner spherical surface 300b at the top 300a of the spherical cover 300 and is used to form the conductive ring 500 by plating.
[0084] The second positioning hole 23 and the second centering screw hole 24 penetrate the positioning plate 2 along the axial direction D. The second positioning hole 23 is aligned with the first positioning hole 121 along the axial direction D, and the second centering screw hole 24 and the first centering screw hole 122 are aligned along the axial direction D. The two second positioning holes 23 are not on the same straight line as the through hole 21 of the positioning plate 2; the two centering screw holes 24 are on the same straight line as the through hole 21 of the positioning plate 2; the second centering screw hole 24 is located circumferentially between the two second positioning holes 23 and radially between the two second positioning holes 23.
[0085] The main body 25 has through holes 251 inclined relative to the axial direction D on both sides of the circumferential direction corresponding to the protrusion 12 of the upper cover 1. There are two through holes 251 on each side. The through holes 251 on both sides are used to form coated discs 500b located at both ends of the conductive ring 500 for mounting conductive leads during the coating process (see Figure 8 ).
[0086] The protrusion 26 protrudes from the side of the main body 25 away from the base 3 along the axial direction D, the outer periphery 22 is located in the main body 25, and the through hole 21 penetrates the main body 25 along the axial direction D; the second positioning hole 23 and the second centering screw hole 24 penetrate the main body 25 and the protrusion 26 along the axial direction D.
[0087] The lower chamfer 27 is located on the side of the outer periphery 22 along the axial direction D near the base 3. The lower chamfer 27 is used to fit a portion of the inner spherical surface 300b of the top 300a of the spherical cover 300.
[0088] The upper chamfer 28 is on the side of the outer periphery 22 away from the base 3 along the axial direction D.
[0089] Positioning plate 2 is a single piece of aluminum alloy.
[0090] The base 3 is used to support the spherical cover 300 of the conductive ring to be plated from below. The base 3 can be detachably fixed to the top cover 1 (and because the positioning plate 2 can be detachably fixed to the top cover 1) to fix the spherical cover 300 of the conductive ring to be plated, thereby forming a plating gap G for forming the conductive ring 500 by plating, which exposes a portion of the inner spherical surface 300b at the top 300a of the spherical cover 300.
[0091] The base 3 has a flange 31 and a seat 32. The flange 31 supports the annular portion 11 and has four threaded holes 311 that are axially D through and circumferentially distributed. Each threaded hole 311 is used to align with the corresponding thread of the upper cover 1.
[0092] The base 32 has a support surface 321 and a through hole 322. The support surface 321 is used to attach and support a portion of the outer spherical surface 300c of the spherical cover 300 to be plated with the conductive ring. The through hole 322 passes through the base 3 along the axial direction D and exposes a portion of the bottom of the outer spherical surface 300c of the spherical cover 300.
[0093] The base 3 is a single piece of polyethylene. Using a single piece of polyethylene for the base 3 can prevent scratches on the ball cover 300.
[0094] The positioning element 4 is used to pass through the first positioning hole 121 and the second positioning hole 23 aligned in the axial direction D so that the protrusion 12 of the upper cover 1 is positioned relative to the positioning plate 2.
[0095] The centering screw 5 is used to screw into the first centering screw hole 122 and the second centering screw hole 24 aligned with the axis D so that the protrusion 12 of the upper cover 1 is fixed relative to the positioning plate 2, and thus the upper cover 1 and the positioning plate 2 are fixed relative to each other in the center.
[0096] Four fixing screws 6 are used to screw into the lower threaded hole 311 of the base 3 and the upper threaded hole 115 of the upper cover 1 to fix the upper cover 1 and the base 3 relative to each other.
[0097] [Splash target]
[0098] An embodiment of the sputtering target 400 is shown in Figure 6 and Figure 7 middle.
[0099] The sputtering target 400 has a sputtering surface 400a2 capable of annular sputtering.
[0100] Specifically, the sputtering part 400a is a frustum-shaped rotating body that is larger at the top and smaller at the bottom. The angle θ between the generatrix 400a1 of the sputtering part 400a and the axis 400b of the sputtering target 400 is 17.5-22.5°. The curved surface formed by the generatrix 400a1 of the sputtering part 400a is used as the sputtering surface 400a2.
[0101] The product to be coated is a spherical dome 300 on which a conductive ring is to be formed on the inner surface by sputtering coating. The sputtering part 400a is used to extend into the hollow space S of the dome fixing fixture 200 to coat the coating gap G, which is only a part of the dome 300 exposed, thereby forming a conductive ring 500 on the inner spherical surface 300b of the dome 300. Through the cooperation between the coating gap G formed by the dome fixing fixture 200 and the sputtering target 400, it is possible not only to form a conductive ring 500 on the inner spherical surface 300b of the dome 300, but also to coat localized parts inside products such as the dome 300. The material of the sputtering target 400 for coating can be determined according to actual needs.
[0102] The sputtering target 400 also includes a constant diameter portion 400c, which is connected to one side of the axial direction D of the sputtering portion 400a. The constant diameter portion 400c serves to limit the extreme position of the sputtering portion 400a in operation, and also helps the sputtering portion 400a to penetrate deeper into the inner cavity of the product to be coated.
[0103] For ease of installation, the sputtering target 400 also includes a mounting flange 400d, which is connected to one side of the axial direction D of the equal diameter portion 400c so that the equal diameter portion 400c is located between the mounting flange 400d and the sputtering portion 400a. The mounting flange 400d is used to install on the target base 100b of the vacuum sputtering coating machine 100.
[0104] The sputtering target 400 has a hollow cavity 400e for circulating a cooling medium to control the temperature of the sputtering target 400. The hollow cavity 400e opens along the axial direction D at the mounting flange 400d and is closed circumferentially and at the bottom of the sputtering section 400a. By circulating the cooling medium through the hollow cavity 400e, the target base 100b, and the cooling medium source (not shown), the temperature of the sputtering target 400 itself during sputtering can be reduced. Any suitable cooling medium can be selected, such as water, and the temperature, flow rate, and velocity of the water can be selected according to actual needs.
[0105] Based on the mounting flange 400d, the hollow cavity 400e is larger at the mounting flange 400d and smaller at the bottom of the sputtering section 400a. Further, as... Figure 2 As shown, the hollow cavity 400e has, along the axial direction D from the mounting flange 400d to the bottom, a first rotating body 400e1, a second rotating body 400e2, a third rotating body 400e3, a fourth rotating body 400e4, a fifth rotating body 400e5, and a sixth rotating body 400e6. The first rotating body 400e1 is a frustum of a cone with a larger upper part and a smaller lower part; the second rotating body 400e2 is a cylinder; the third rotating body 400e3 is a frustum of a cone with a larger upper part and a smaller lower part; the fourth rotating body 400e4 is a frustum of a cone with a larger upper part and a smaller lower part; the fifth rotating body 400e5 is a cylinder; and the sixth rotating body 400e6 is a frustum of a cone with a larger upper part and a smaller lower part. The six segments of the first rotating body 400e1, the second rotating body 400e2, the third rotating body 400e3, the fourth rotating body 400e4, the fifth rotating body 400e5, and the sixth rotating body 400e6, together with the three segments of the mounting flange 400d, the equal diameter section 400c, and the sputtering section 400a, form a non-uniform wall thickness. This enhances the heat conductivity of the non-uniform wall thickness within the target, which is beneficial for improving the temperature uniformity of the sputtering target 400 under cooling medium circulation.
[0106] The corner of the curved surface formed by the outer plane of the bottom of the sputtering part 400a and the generatrix 400a1 is rounded with a chamfer 400f. If the corner of the curved surface formed by the outer plane of the bottom of the sputtering part 400a and the generatrix 400a1 is sharp, the sharp corner is not only easy to be damaged by external forces (such as when the sputtering target 400 is installed), but also easy to scratch the operator.
[0107] [test]
[0108] Example 1
[0109] The processing method for the spherical conductive ring includes the following steps:
[0110] Step 1: Before being fixed onto the spherical cover fixture 200, the spherical cover 300 is ultrasonically cleaned and wiped. Inside the vacuum chamber 100a of the vacuum sputtering coating machine 100, the spherical cover 300 is fixed using the spherical cover fixture 200 to form a hollow space S and a coating gap G that exposes a portion of the inner spherical surface 300b of the spherical cover 300. The spherical cover 300 is a zinc sulfide spherical cover, and the diameter of the inner spherical surface 300 is 160mm. The vacuum sputtering coating machine 100 is a JWC400-II vacuum sputtering coating machine manufactured by Chengdu Xiwoke Vacuum Technology Co., Ltd., purchased commercially. The spherical cover fixture 200 uses the aforementioned... Figures 2 to 5 The specific structure and materials shown are as follows: the thickness of the upper cover 1 along the axial direction D (i.e., the distance from the top of the upper cover 1 to the bottom of the outer peripheral surface 111b) is 18 mm; the inner peripheral surface 112 is a slope; the diameter of the bottom perimeter 112a of the inner peripheral surface 112 is 155.63 mm; the diameter of the top of the inner peripheral surface 112 is 158.25 mm; the length of the outer peripheral surface 111b along the axial direction D is 2.92 mm greater than the length of the inner peripheral surface 111a along the axial direction D; the diameter of the through hole 21 of the positioning plate 2 is 2 mm; the diameter of the outer peripheral edge 22 is 154.10 mm; the thickness of the main body 25 along the axial direction D is 5 mm; the thickness of the protrusion 26 along the axial direction D is 2.34 mm; the protrusion 26 extends radially to half the radius of the outer peripheral edge 22; and the width of the protrusion 26 is 25.5 mm.
[0111] In the intermediate step, 60 sccm of argon gas was introduced into the vacuum sputtering coating machine 100, and the current was set to 120 mA, the voltage to 360 V, and the time to 600 seconds. The configured ion source was turned on to clean the part of the spherical cover 300 exposed at the coating gap G. The ion source was a Hall ion source purchased from Boton Optoelectronics Technology Co., Ltd.
[0112] Step two, the nickel-chromium alloy sputtering target 400 is mounted on the target base 100b of the vacuum sputtering coating machine 100. The sputtering target 400 has a sputtering surface 400a2 capable of annular sputtering. The sputtering target 400 adopts the aforementioned and Figure 6 and Figure 7The specific structure is as follows: the angle θ between the generatrix 400a1 of the sputtering section 400a and the axis 400b of the sputtering target 400 is 20°; the axial height D of the sputtering section 400a is 27mm; the axial height D of the equal-diameter section 400c is 10mm and the diameter is 60mm; the axial height D of the mounting flange 400 is 3mm and the outer diameter is 66mm; the angle θ between the generatrix of the first rotating body 400e1 and the axis 400b is 30°; the diameter of the second rotating body 400e2 is 54mm; the bottom surface of the second rotating body 400e2 is 8.5mm away from the top surface of the mounting flange 400 along the axial direction D; and the third rotating body 400e3... The angle θ between the generatrix of the third rotating body 400e3 and the axis 400b is 20°. The bottom surface of the third rotating body 400e3 is 16mm away from the top surface of the mounting flange 400 along the axial direction D. The angle θ between the generatrix of the fourth rotating body 400e4 and the axis 400b is 45°. The diameter of the bottom surface of the fourth rotating body 400e4 is 38mm. The height of the sixth rotating body 400e6 along the axial direction D is 6.5mm. The bottom surface of the sixth rotating body 400e6 is 37mm away from the top surface of the mounting flange 400. The diameter of the bottom surface of the sixth rotating body 400e6 is 33.25mm. The chamfer 400f is R3. The hollow cavity 400e is filled with water circulation cooling medium.
[0113] Step 3: Move the sputtering target 400 relative to the spherical cover fixing fixture 200 so that the sputtering part 400a of the sputtering target 400 extends into the hollow space S of the spherical cover fixing fixture 200.
[0114] Step four: Close vacuum chamber 100a and evacuate it until the vacuum level reaches 1.5 × 10⁻⁶. - 3 Pa;
[0115] Step 5: Start the sputtering power supply and sputtering gas, introduce 70 sccm of argon gas, set the current to 500 mA, voltage to 360 V, coating time to 60 sec, and deposition rate to 1 nm / s. The sputtering gas bombards the sputtering surface 400a2 of the sputtering target 400 so that the particles of the sputtering target 400 at the point where the sputtering surface 400a2 is bombarded are deposited in the coating gap G.
[0116] After the coating is formed into a resistive layer, the sputtering target 400 is replaced with a copper sputtering target 400, and steps two to five are repeated. In step five, 70 sccm of argon gas is introduced, and the current is set to 500 mA, the voltage to 360 V, the coating time to 3000 s, and the deposition rate to 1 nm / s.
[0117] Step 6: After the plating is completed, remove the spherical cover fixing fixture 200 from the vacuum chamber 100a and remove the spherical cover 300 from the spherical cover fixing fixture 200, from which the conductive ring 500 has been formed.
[0118] Example 2
[0119] Except that the sputtering target 400 used for the first coating is a nickel sputtering target 400, and 70 sccm of argon gas is introduced in the corresponding step five, with the current set to 500 mA, voltage 360 V, coating time 80 s, and deposition rate 1 nm / s, and the subsequent coating to form the resistive layer uses a silver sputtering target 400, and 70 sccm of argon gas is introduced in the repeated step five, with the current set to 500 mA, voltage 360 V, coating time 2500 s, and deposition rate 1 nm / s, the rest is the same as in Example 1.
[0120] Figure 9 The measured resistance of the conductive ring 500 in Example 1 is shown to be 0.5 ohms, indicating that the conductive ring 500 has good adhesion.
[0121] The measured resistance of the conductive ring 500 in Example 2 is 0.2 ohms, indicating that the conductive ring 500 has good adhesion.
[0122] Several exemplary embodiments have been described in detail above, but this document is not intended to limit itself to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined to form several other combinations, which are not shown for simplicity.
Claims
1. A method of manufacturing a ball cover conductive ring, characterized by, Including the following steps: Step 1: In the vacuum chamber (100a) of the vacuum sputtering coating machine (100), the spherical cover (300) is fixed with a spherical cover fixing fixture (200) to form a hollow space (S) and a coating gap (G) that exposes a portion of the inner spherical surface (300b) of the spherical cover (300). Step 2: Install the sputtering target (400) on the target base (100b) of the vacuum sputtering coating machine (100). The sputtering target (400) has a sputtering surface (400a2) capable of annular sputtering. Step 3: Move the spherical cover fixing fixture (200) and the sputtering target (400) relative to each other so that the sputtering part (400a) of the sputtering target (400) extends into the hollow space (S) of the spherical cover fixing fixture (200); Step 4: Close the vacuum chamber (100a) and evacuate the vacuum chamber (100a); Step 5: Start the sputtering power supply and sputtering gas. The sputtering gas bombards the sputtering surface (400a2) of the sputtering target (400) so that the particles of the sputtering target (400) at the point where the sputtering surface (400a2) is bombarded are deposited in the coating gap (G) to form a conductive ring (500). Step six: After the coating is completed, remove the spherical cover fixture (200) from the vacuum chamber (100a) and remove the spherical cover (300) from the spherical cover fixture (200) from the spherical cover fixture (200) to form the conductive ring (500); in, The ball cover fixing fixture (200) includes a top cover (1), a positioning plate (2), and a base (3); The top cover (1) is used to house the top (300a) of the spherical cover (300) of the conductive ring to be coated, and the top cover (1) has a hollow space (S) that extends through along the axial direction (D). The positioning plate (2) is used to be placed inside the top (300a) of the ball cover (300) of the conductive ring to be coated. The positioning plate (2) has a through hole (21) which penetrates the positioning plate (2) along the axial direction (D) so that the space enclosed by the inner spherical surface (300b) of the top (300a) of the ball cover (300) is connected to the hollow space (S) of the annular part (11). The base (3) is used to support the ball cover (300) of the conductive ring to be coated from below. The positioning plate (2) can be detachably fixed to the top cover (1) and the base (3) can be detachably fixed to the top cover (1) to fix the ball cover (300) of the conductive ring to be coated, thereby forming a coating gap (G) for forming the conductive ring (500) by coating a portion of the inner spherical surface (300b) exposed at the top (300a) of the ball cover (300).
2. The method for processing a spherical conductive ring according to claim 1, characterized in that, The shroud (300) is a zinc sulfide or zinc selenide shroud.
3. The method for processing a spherical conductive ring according to claim 1, characterized in that, First, a transition layer is formed by coating, and then a resistive layer is formed by coating. First, a transition layer is formed by coating. The process is carried out according to steps one to five. The material of the sputtering target (400) to form the transition layer is the transition layer material, which is nickel, chromium, or a nickel-chromium alloy. Steps two through five are repeated after the coating is applied to form a resistive layer. The material of the sputtering target (400) for forming the resistive layer is the resistive layer material, which is copper, silver, or gold.
4. The method for processing a spherical conductive ring according to claim 3, characterized in that, The deposition time for first depositing the transition layer is 50-100 seconds. The deposition time for forming the resistive layer in the post-deposition process is 2000-3000 seconds; The deposition rates for pre-coating and post-coating are 1-2 nm / s.
5. The method for processing a spherical conductive ring according to claim 1, characterized in that, In step four, the vacuum reached was 1.5 x 10 -3 Pa.
6. The method for processing a spherical conductive ring according to claim 1, characterized in that, In step one, the spherical cover (300) is cleaned and wiped before being fixed onto the spherical cover fixture (200); Cleaning and wiping can be done using ultrasonic cleaning or manual wiping.
7. The method for processing a spherical conductive ring according to claim 1, characterized in that, Between step one and step two, the ion source of a vacuum sputtering coating machine (100) is used to clean the part of the spherical cover (300) exposed at the coating gap (G).
8. The method for processing a spherical conductive ring according to claim 1, characterized in that, The sputtering target (400) includes a sputtering part (400a), which is a frustum-shaped rotating body that is larger at the top and smaller at the bottom. The angle (θ) between the generatrix (400a1) of the sputtering part (400a) and the axis (400b) of the sputtering target (400) is 17.5-22.5°. The curved surface formed by the generatrix (400a1) of the sputtering part (400a) is used as the sputtering surface (400a2).
9. The method for processing a spherical conductive ring according to claim 1, characterized in that, The sputtering target (400) has a hollow cavity (400e) for circulating cooling medium to control the temperature of the sputtering target (400). The hollow cavity (400e) is open along the axial direction (D) at the mounting flange (400d) and closed in the circumferential direction and at the bottom of the sputtering section (400a).
Citation Information
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