Memory detection method and memory
By writing preset data onto the bit lines and maintaining the potential difference, combined with the use of a readout amplifier, leakage detection between the memory cell and the bit lines is simplified, improving the accuracy and efficiency of detection.
CN116705103BActive Publication Date: 2026-06-26CHANGXIN MEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2022-02-28
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
In existing technologies, leakage current detection between memory cells and bit lines is complex, time-consuming, and inefficient.
Method used
Preset storage data is written to all memory cells through the bit line, and the data is held for a preset time when the potential on the bit line is different from the potential of the memory cell. Then, the actual storage data is read through the bit line and compared with the readout amplifier to determine whether there is leakage.
Benefits of technology
It simplifies the leakage detection process between the memory cell and the bit line, improves the accuracy and efficiency of detection, and reduces the detection time.
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Smart Images
Figure CN116705103B_ABST
Abstract
The application provides a memory detection method and a memory, relates to the technical field of semiconductors, and is used for solving the technical problem that leakage detection between a storage unit and a bit line is complex. The memory detection method comprises the following steps: selecting a word line, writing preset storage data into all storage units through a bit line; closing the word line, and applying a first voltage to the bit line, so that the potential on the bit line is different from the potential of the storage unit; after a preset time is kept, selecting the word line, and reading actual storage data in all storage units through the bit line; comparing the actual storage data of each storage unit with the preset storage data, so as to determine whether the storage unit has leakage. Through the writing of the preset storage data and the reading of the actual storage data in all storage units, and the separate application of the potential on the bit line, the word line does not need to be selected in sequence, and the leakage detection between the storage unit and the bit line is simple.
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