Semiconductor light emitting element and method of manufacturing the same

Abstract

This invention provides a semiconductor light-emitting element and its fabrication method. The semiconductor light-emitting element includes a substrate, an n-type semiconductor layer, a quantum well layer, and a p-type semiconductor layer stacked sequentially from bottom to top. The n-type semiconductor layer includes a first confinement layer, a first buffer layer, an electrode contact layer, a second buffer layer, and a second confinement layer stacked sequentially from bottom to top. Both the first and second confinement layers include multiple highly doped layers and multiple lightly doped layers, with the doping concentration of the highly doped layers being greater than that of the lightly doped layers. The highly doped and lightly doped layers are alternately stacked. The first and second confinement layers each include sequentially stacked highly doped and lightly doped layers, thereby forming multiple capacitor structures. This allows the current to spread laterally multiple times within the n-type semiconductor layer, improving the lateral current spreading capability, avoiding current congestion, and increasing the luminous efficiency of the semiconductor light-emitting element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor light-emitting element and its fabrication method. Background Technology

[0002] Semiconductor light-emitting elements have advantages such as a wide range of tunable wavelengths, high luminous efficiency, energy saving and environmental protection, long life, small size and strong design flexibility. They have gradually replaced incandescent lamps and fluorescent lamps as the light source for ordinary household lighting and are widely used in new scenarios, such as Mini-LED, indoor high-resolution displays, outdoor displays, mobile phone backlights, laptop backlights, household lighting, street lights, vehicle lights and flashlights.

[0003] However, due to limitations in materials, processes, and equipment, traditional nitride semiconductor light-emitting devices suffer from lattice mismatch, carrier overflow, current crowding, and light absorption, which are the main factors affecting luminous efficiency. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor light-emitting element and its fabrication method. The first confining layer and the second confining layer each include a highly doped layer and a low doped layer that are alternately stacked in sequence to form a multi-capacitor structure, thereby improving the lateral current expansion capability, avoiding current congestion, and improving the luminous efficiency of the semiconductor light-emitting element.

[0005] To solve the above-mentioned technical problems, according to a first aspect of the present invention, a semiconductor light-emitting element is provided, comprising a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer stacked sequentially from bottom to top. The n-type semiconductor layer includes a first confinement layer, a first buffer layer, an electrode contact layer, a second buffer layer and a second confinement layer stacked sequentially from bottom to top. The first confinement layer and the second confinement layer each include multiple highly doped layers and multiple low-doped layers. The doping concentration of the highly doped layers is greater than the doping concentration of the low-doped layers, and the highly doped layers and the low-doped layers are alternately stacked.

[0006] Optionally, the adjacent highly doped layer and the low doped layer are considered as a pair of doped layers, and the number of doped layers in the first confinement layer and the second confinement layer is between 1 and 10.

[0007] Optionally, the first limiting layer includes a first doped layer and a second doped layer stacked alternately in sequence, wherein the doping concentration of the first doped layer is greater than that of the second doped layer, and in each pair of doped layers, the first doped layer is closer to the substrate and the second doped layer is closer to the electrode contact layer.

[0008] Optionally, the thickness of the first doped layer is greater than the thickness of the second doped layer.

[0009] Optionally, the materials of the first doping layer and the second doping layer both contain AlGaN, and the Al component of each doping layer in the first confinement layer gradually decreases from the layer far from the electrode contact layer to the layer close to the electrode contact layer.

[0010] Optionally, the material of the first doping layer contains Al

[0017] , Ga 1-a N, where 0.2 < a < 0.8, and the doping concentration of the first doping layer is 1E19 cm -3 ~2E19 cm -3 .

[0011] Optionally, the material of the second doping layer contains Al b Ga 1-b N, where 0.2 < b < 0.8, and the doping concentration of the second doping layer is 5E17 cm -3 ~5E18 cm -3 .

[0012] Optionally, the second confinement layer includes a third doping layer and a fourth doping layer that are alternately stacked in sequence. The doping concentration of the third doping layer is greater than that of the fourth doping layer, and in each pair of doping layers, the third doping layer is close to the quantum well layer, and the fourth doping layer is close to the electrode contact layer.

[0013] Optionally, the thickness of the third doping layer is greater than that of the fourth doping layer.

[0014] Optionally, the materials of the third doping layer and the fourth doping layer both contain AlGaN, and the Al component of each doping layer in the second confinement layer gradually decreases from the layer far from the electrode contact layer to the layer close to the electrode contact layer.

[0015] Optionally, the material of the third doping layer contains Al c Ga 1-c N, where 0.2 < c < 0.8, and the doping concentration of the third doping layer is 1E19 cm -3 ~2E19 cm [[ID= (41]] -3 .

[0016] Optionally, the material of the fourth doping layer contains Al d Ga 1-d N, where 0.2 < d < 0.8, and the doping concentration of the fourth doping layer is 5E17 cm -3 ~5E18 cm -3 .

[0017] Optionally, the thickness of the first doped layer is between 30 nm and 450 nm, the thickness of the second doped layer is between 20 nm and 300 nm, and the thickness of the first confinement layer is between 500 nm and 700 nm; the thickness of the third doped layer is between 30 nm and 450 nm, the thickness of the fourth doped layer is between 20 nm and 300 nm, and the thickness of the second confinement layer is between 500 nm and 700 nm.

[0018] Optionally, the material of the electrode contact layer contains In. h Ga 1-h N, where 0 < h ≤ 0.1, and the doping concentration of the electrode contact layer is greater than the doping concentration of the first confinement layer and the second confinement layer.

[0019] Optionally, the doping concentration of the electrode contact layer is 2E19cm⁻¹. -3 ~1E20 cm -3 The thickness of the electrode contact layer is between 300 nm and 600 nm.

[0020] Optionally, both the first buffer layer and the second buffer layer are made of unintentionally doped GaN, and the thicknesses of both the first buffer layer and the second buffer layer are between 5 nm and 20 nm.

[0021] To solve the above-mentioned technical problems, according to a second aspect of the present invention, a method for fabricating a semiconductor light-emitting element is also provided, comprising the following steps:

[0022] Provide a substrate;

[0023] An n-type semiconductor layer is formed on the substrate. The n-type semiconductor layer includes a first confinement layer, a first buffer layer, an electrode contact layer, a second buffer layer, and a second confinement layer formed sequentially on the substrate. The first confinement layer and the second confinement layer each include multiple highly doped layers and multiple low-doped layers. The doping concentration of the highly doped layer is greater than the doping concentration of the low-doped layer. The highly doped layer and the low-doped layer are alternately stacked.

[0024] A quantum well layer and a p-type semiconductor layer are sequentially formed on the n-type semiconductor layer.

[0025] Optionally, the adjacent highly doped layer and the low doped layer are considered as a pair of doped layers, and the number of doped layers in the first confinement layer and the second confinement layer is between 1 and 10.

[0026] Optionally, the first confinement layer includes a first doped layer and a second doped layer that are alternately stacked in sequence. The doping concentration of the first doped layer is greater than that of the second doped layer, and in each pair of doped layers, the first doped layer is closer to the substrate and the second doped layer is closer to the electrode contact layer.

[0027] Optionally, the thickness of the first doped layer is greater than that of the second doped layer.

[0028] Optionally, the materials of the first doped layer and the second doped layer both contain AlGaN, and the Al component of each doped layer in the first confinement layer gradually decreases from the layer far from the electrode contact layer to the layer close to the electrode contact layer.

[0029] Optionally, the material of the first doped layer contains Al a Ga 1-a N, where 0.2 < a < 0.8, and the doping concentration of the first doped layer is 1E19 cm -3 ~2E19 cm -3 .

[0030] Optionally, the material of the second doped layer contains Al b Ga 1-b N, where 0.2 < b < 0.8, and the doping concentration of the second doped layer is 5E17 cm -3 ~5E18 cm -3 .

[0031] Optionally, the second confinement layer includes a third doped layer and a fourth doped layer that are alternately stacked in sequence. The doping concentration of the third doped layer is greater than that of the fourth doped layer, and in each pair of doped layers, the third doped layer is closer to the quantum well layer and the fourth doped layer is closer to the electrode contact layer.

[0032] Optionally, the thickness of the third doped layer is greater than that of the fourth doped layer.

[0033] Optionally, the materials of the third doped layer and the fourth doped layer both contain AlGaN, and the Al component of each doped layer in the second confinement layer gradually decreases from the layer far from the electrode contact layer to the layer close to the electrode contact layer.

[0034] Optionally, the material of the third doped layer contains Al c Ga 1-c N, where 0.2 < c < 0.8, and the doping concentration of the third doped layer is 1E19 cm -3 ~2E19 cm -3 . <0000I57>Optionally, the material of the fourth doped layer contains Ald Ga 1-d N, where 0.2 < d < 0.8, and the doping concentration of the fourth doping layer is 5E17 cm -3 ~5E18 cm -3 .

[0036] Optionally, the thickness of the first doping layer is between 30 nm and 450 nm, the thickness of the second doping layer is between 20 nm and 300 nm, and the thickness of the first confinement layer is between 500 nm and 700 nm; the thickness of the third doping layer is between 30 nm and 450 nm, the thickness of the fourth doping layer is between 20 nm and 300 nm, and the thickness of the second confinement layer is between 500 nm and 700 nm.

[0037] Optionally, the material of the electrode contact layer contains In h Ga 1-h N, where 0 < h ≤ 0.1, and the doping concentration of the electrode contact layer is greater than the doping concentrations of the first confinement layer and the second confinement layer.

[0038] Optionally, the doping concentration of the electrode contact layer is 2E19 cm -3 ~1E20 cm -3 , and the thickness of the electrode contact layer is between 300 nm and 600 nm.

[0039] Optionally, the materials of the first buffer layer and the second buffer layer both contain unintentionally doped GaN, and the thicknesses of the first buffer layer and the second buffer layer are both between 5 nm and 20 nm.

[0040] Compared with the prior art, in the semiconductor light-emitting device and its manufacturing method provided by the present invention, the first confinement layer and the second confinement layer both include multiple high-doping layers and multiple low-doping layers, and the high-doping layers and the low-doping layers are alternately stacked to form multiple capacitor structures, enabling the current to be laterally expanded multiple times in the n-type semiconductor layer, thereby improving the lateral expansion ability of the current, avoiding current crowding, and enhancing the light-emitting efficiency of the semiconductor light-emitting device.

[0041] In addition, the first buffer layer and the second buffer layer are provided on both sides of the electrode contact layer, thereby being able to buffer the lattice mismatch between the first confinement layer and the electrode contact layer and between the second confinement layer and the electrode contact layer, and reducing the generation of dislocations.

[0042] Furthermore, both the first and second confining layers are made of aluminum. Due to the influence of the aluminum component, the potential barriers of the first and second confining layers are increased relative to the electrode contact layer, requiring more energy for electron flow. This improves the lateral expansion of electrons within the electrode contact layer between the first and second confining layers. Simultaneously, the increased Al component in the first and second confining layers further raises the potential barrier, resulting in less absorption of light emitted by the quantum well layer's radiative recombination by the first and second confining layers, thereby improving light extraction efficiency and luminous efficiency.

[0043] Furthermore, in the first confinement layer, the Al composition of each doped layer gradually decreases from the distance from the electrode contact layer to the distance from the electrode contact layer, and in the second confinement layer, the Al composition of each doped layer gradually decreases from the distance from the distance from the electrode contact layer to the distance from the electrode contact layer. That is, from the substrate to the quantum well layer, the Al composition in the first confinement layer gradually decreases, while the Al composition in the second confinement layer gradually increases. This provides a stress buffering effect and reduces the lattice mismatch between the first and second confinement layers and the electrode contact layer. At the same time, electrons flow from the electrode contact layer to the second confinement layer and then to the quantum well layer. When approaching the quantum well layer, the potential barrier of the second confinement layer increases, which is equivalent to an electron blocking layer, hindering the passage of electrons and alleviating the phenomenon of electron overflow.

[0044] Furthermore, the electrode contact layer material contains InGaN, which, compared to existing GaN, can reduce contact resistance, thereby lowering the voltage and improving luminous efficiency.

[0045] Furthermore, compared to conventional n-type semiconductor layers, the n-type semiconductor layer provided by this invention has a doping concentration greater than 2E19cm only in the electrode contact layer. -3 The doping concentrations of the first confinement layer and the second confinement layer are both lower than the doping concentration of the electrode contact layer, resulting in a relatively low overall doping concentration of the n-type semiconductor layer. This reduces defects caused by doping, decreases leakage channels, and improves the crystal quality and antistatic capability of the n-type semiconductor layer. Attached Figure Description

[0046] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention. Wherein:

[0047] Figure 1 This is a schematic diagram of the structure of a semiconductor light-emitting element provided in an embodiment of the present invention.

[0048] Figure 2 This is a schematic diagram of the structure of the first limiting layer provided in an embodiment of the present invention.

[0049] Figure 3 This is a schematic diagram of the structure of the second confinement layer provided in an embodiment of the present invention.

[0050] Figure 4 This is a flowchart of a method for fabricating a semiconductor light-emitting element according to an embodiment of the present invention.

[0051] In the attached image:

[0052] 100 - Substrate; 200 - Unintentionally doped layer; 300 - n-type semiconductor layer; 301 - First confinement layer; 3011 - First doped layer; 3012 - Second doped layer; 302 - First buffer layer; 303 - Electrode contact layer; 304 - Second buffer layer; 305 - Second confinement layer; 3051 - Fourth doped layer; 3052 - Third doped layer; 400 - Quantum well layer; 500 - p-type semiconductor layer. Detailed Implementation

[0053] To make the objectives, advantages, and features of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the embodiments of this invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and may sometimes use different scales.

[0054] As used herein, the singular forms “a,” “an,” and “the” include plural objects unless otherwise expressly indicated. As used herein, the term “or” is generally used to include “and / or” unless otherwise expressly indicated. As used herein, the term “a number” is generally used to include “at least one” unless otherwise expressly indicated. As used herein, the term “at least two” is generally used to include “two or more” unless otherwise expressly indicated. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature.

[0055] Figure 1 This is a schematic diagram of the structure of a semiconductor light-emitting element provided in an embodiment of the present invention. Figure 1As shown, the semiconductor light-emitting element provided in this embodiment of the invention includes a substrate 100, an n-type semiconductor layer 300, a quantum well layer 400, and a p-type semiconductor layer 500 stacked sequentially from bottom to top. The n-type semiconductor layer 300 includes a first confinement layer 301, a first buffer layer 302, an electrode contact layer 303, a second buffer layer 304, and a second confinement layer 305 stacked sequentially from bottom to top. The first confinement layer 301 and the second confinement layer 305 each include multiple highly doped layers and multiple low-doped layers. The doping concentration of the highly doped layer is greater than the doping concentration of the low-doped layer, and the highly doped layer and the low-doped layer are alternately stacked.

[0056] The terms "highly doped layer" and "lowly doped layer" are relative. A highly doped layer refers to a doped layer with a higher doping concentration than the lowly doped layer, and a lowly doped layer refers to a doped layer with a lower doping concentration than the highly doped layer. The first confinement layer 301 comprises alternating layers of highly doped and lowly doped layers, and the second confinement layer 305 also comprises alternating layers of highly doped and lowly doped layers. The highly doped layers have low resistance, while the lowly doped layers have high resistance. The lowly doped layers and the adjacent highly doped layers on both sides form a capacitor-like structure. The lowly doped layers with high resistance act as a dielectric layer. When current flows longitudinally, it expands laterally through the lowly doped layers. The first confinement layer 301 and the second confinement layer 305 form multiple capacitor structures, allowing the current to expand laterally multiple times within the n-type semiconductor layer 300. This improves the lateral expansion capability of the current, avoids current congestion, and thus improves the luminous efficiency of the semiconductor light-emitting element.

[0057] For example, adjacent highly doped layers and low-doped layers are considered as a pair of doped layers, that is, a highly doped layer formed on the substrate 100 and a low-doped layer formed on the highly doped layer are considered as a pair of doped layers. Then, highly doped layers and low-doped layers formed sequentially on the low-doped layer are considered as a second pair of doped layers, and so on. The number of pairs of doped layers in the first confinement layer 301 is between 1 and 10, but is not limited thereto. For example, the first confinement layer 301 includes 5 highly doped layers and 5 low-doped layers, which are alternately stacked to form a total of 5 pairs of doped layers. The number of pairs of doped layers in the second confinement layer 305 is also between 1 and 10, but is not limited thereto. The number of pairs of doped layers in the first confinement layer 301 can be the same as or different from the number of pairs of doped layers in the second confinement layer 305. When there is only one pair of doped layers, the electrode contact layer 303 can be used as a highly doped layer to form a capacitor with the first confinement layer 301 or the second confinement layer 305. When the number of doped layers is too large, for example, more than 10 pairs, the thickness of the highly doped layer and the lowly doped layer will be too thin, making it easy for electrons to tunnel through and reducing the effect of current expansion. Therefore, it is necessary to select the number of doped layers in the first confinement layer 301 and the second confinement layer 305 according to the actual situation.

[0058] The n-type semiconductor layer 300 is doped with an n-type dopant to function as an n-type layer. Therefore, the dopant in each layer of the n-type semiconductor layer 300 is an n-type dopant. The dopant includes, but is not limited to, Si (silicon), Ge (germanium), Sn (tin), S (sulfur), O (oxygen), Ti (titanium), and Zr (zirconium). In this embodiment, the dopant is preferably Si, meaning that the aforementioned highly doped layer and low-doped layer refer to doped layers with different concentrations of silicon doping.

[0059] In this embodiment, the substrate 100 may be made of sapphire, GaN (gallium nitride), SiC (silicon carbide), Si (silicon), Ge (germanium), or ZnO (zinc oxide), but is not limited thereto. Furthermore, the thickness of the substrate 100 is not limited. An unintentionally doped layer 200 may also be formed between the substrate 100 and the n-type semiconductor layer 300.

[0060] The electrode contact layer 303 makes ohmic contact with the subsequently formed electrode. In this embodiment, the material of the electrode contact layer 303 includes InGaN (indium gallium nitride), for example, In... h Ga 1-h N, where 0 < h ≤ 0.1, InGaN has a lower work function than GaN, making it easier to form ohmic contacts, thereby reducing contact resistance, lowering voltage, and improving luminous efficiency.

[0061] The doping concentration of the electrode contact layer 303 is greater than that of the first confinement layer 301 and the second confinement layer 305. That is, the electrode contact layer 303 has the highest doping concentration in the n-type semiconductor layer 300. Higher doping concentration results in lower resistance, weakening the longitudinal current flow in the electrode contact layer 303 and thus enhancing the lateral current propagation capability. For example, the doping concentration of the electrode contact layer 303 is 2E19cm⁻¹. -3 ~1E20 cm -3 The thickness of the electrode contact layer 303 is between 300 nm and 600 nm.

[0062] Compared to conventional n-type semiconductor layers, the doping concentration of the GaN layer is greater than 2E19cm⁻¹. -3 In the n-type semiconductor layer 300 provided by the present invention, only the electrode contact layer 303 has a doping concentration greater than 2E19cm⁻¹. -3 The doping concentrations of the first confinement layer 301 and the second confinement layer 305 are both lower than the doping concentration of the electrode contact layer 303, resulting in a relatively low overall doping concentration of the n-type semiconductor layer 300. This reduces defects caused by doping, decreases leakage channels, and improves the crystal quality and antistatic capability of the n-type semiconductor layer 300.

[0063] Figure 2 This is a schematic diagram of the structure of the first confinement layer provided in an embodiment of the present invention. Please refer to... Figure 2 As shown, the first confinement layer 301 includes a first doped layer 3011 and a second doped layer 3012 alternately stacked in sequence. The doping concentration of the first doped layer 3011 is greater than that of the second doped layer 3012. In each pair of doped layers, the first doped layer 3011 is closer to the substrate 100, and the second doped layer 3012 is closer to the electrode contact layer 303. Each pair of doped layers refers to the first doped layer 3011 formed on the substrate 100 and the second doped layer 3012 formed on the first doped layer 3011 as a pair of doped layers, and then the first doped layer 3011 and the second doped layer 3012 formed on the second doped layer 3012 as a second pair of doped layers, and so on.

[0064] The electrode contact layer 303 is a highly doped layer, the second doped layer 3012 near the electrode contact layer 303 is a low-doped layer, and the electrode contact layer 303 is also a low-doped layer (i.e. the subsequent fourth doped layer 3052), which allows the current to spread sufficiently within the electrode contact layer 303.

[0065] In this embodiment, the thickness of the first doping layer 3011 is greater than that of the second doping layer 3012. The second doping layer 3012 is a low-doped layer. According to the capacitance formula C = εS / d, the smaller the thickness of the second doping layer 3012, the larger the capacitance C, thereby enabling better current expansion.

[0066] The materials of the first doping layer 3011 and the second doping layer 3012 both contain AlGaN (aluminum gallium nitride), and the Al component of each doping layer in the first confinement layer 301 gradually decreases from far away from the electrode contact layer 303 to close to the electrode contact layer 303. That is, from the substrate 100 to the electrode contact layer 303, the Al component in the first confinement layer 301 gradually decreases.

[0067] Exemplarily, the material of the first doping layer 3011 contains Al a Ga 1-a N, where 0.2 < a < 0.8, the doping concentration of the first doping layer 3011 is 1E19 cm -3 ~2E19 cm -3 , and the thickness of the first doping layer 3011 is between 30 nm and 450 nm. The material of the second doping layer 3012 contains Al b Ga 1-b N, where 0.2 < b < 0.8, the doping concentration of the second doping layer 3012 is 5E17 cm -3 ~5E18 cm -3 , and the thickness of the second doping layer 3012 is between 20 nm and 300 nm.

[0068] Figure 3 is a schematic structural diagram of a second confinement layer provided by an embodiment of the present invention. Please refer to Figure 3 As shown, the second confinement layer 305 includes a third doping layer 3052 and a fourth doping layer 3051 that are alternately stacked in sequence. The doping concentration of the third doping layer 3052 is greater than that of the fourth doping layer 3051, and in each pair of doping layers, the third doping layer 3052 is close to the quantum well layer 400, and the fourth doping layer 3051 is close to the electrode contact layer 303. Each pair of doping layers means taking the fourth doping layer 3051 formed on the electrode contact layer 303 and the third doping layer 3052 formed on the fourth doping layer 3051 as a pair of doping layers, then taking the fourth doping layer 3051 and the third doping layer 3052 formed in sequence on the third doping layer 3052 as the second pair of doping layers, and so on.

[0069] The electrode contact layer 303 is a highly doped layer, the second doped layer 3012 on one side of the electrode contact layer 303 is a low doped layer, and the fourth doped layer 3051 on the other side of the electrode contact layer 303 is also a low doped layer. The high doped layer has low resistance and the low doped layer has high resistance, which allows the current to spread fully within the electrode contact layer 303 with low resistance.

[0070] In this embodiment, the thickness of the third doped layer 3052 is greater than the thickness of the fourth doped layer 3051. The fourth doped layer 3051 is a lightly doped layer. According to the capacitance formula C = εS / d, the smaller the thickness of the fourth doped layer 3051, the larger the capacitance C, thereby resulting in better current spread.

[0071] The materials of the third doped layer 3052 and the fourth doped layer 3051 both contain AlGaN, and the Al composition of each doped layer in the second confinement layer 305 gradually decreases from the distance from the electrode contact layer 303 to the distance from the electrode contact layer 303, that is, from the quantum well layer 400 to the electrode contact layer 303, the Al composition in the second confinement layer 305 gradually decreases.

[0072] Both the first confinement layer 301 and the second confinement layer 305 contain aluminum. Due to the influence of the aluminum component, the potential barrier of the first confinement layer 301 and the second confinement layer 305 is higher than that of the electrode contact layer 303. Electron flow requires more energy, while the potential barrier of the electrode contact layer 303 is relatively low, making longitudinal movement more difficult. This improves the lateral expansion of electrons within the electrode contact layer 303 between the first confinement layer 301 and the second confinement layer 305. Simultaneously, electrons in semiconductor materials can absorb photon energy and undergo transitions. Because the increased aluminum component in the first confinement layer 301 and the second confinement layer 305 raises the potential barrier, the photon energy required for the transition is greater. Therefore, less light emitted by the radiative recombination of the quantum well layer 400 is absorbed by the first confinement layer 301 and the second confinement layer 305, thereby improving light extraction efficiency and luminous efficiency.

[0073] In the first confinement layer 301, the Al component of each doping layer gradually decreases from being far away from the electrode contact layer 303 to being close to the electrode contact layer 303. In the second confinement layer 305, the Al component of each doping layer gradually decreases from being far away from the electrode contact layer 303 to being close to the electrode contact layer 303. That is, from the substrate 100 to the quantum well layer 400, the Al component in the first confinement layer 301 gradually decreases, and the Al component in the second confinement layer 305 gradually increases, thereby providing a stress buffering effect and reducing the lattice mismatch between the first confinement layer 301 and the second confinement layer 305 and the electrode contact layer 303. At the same time, in a semiconductor, the movement speed of electrons is greater than that of holes. Electrons flow from the electrode contact layer 303 to the second confinement layer 305 and then to the quantum well layer 400. When approaching the quantum well layer 400, the potential barrier of the second confinement layer 305 increases, which is equivalent to an electron blocking layer, hindering the passage of electrons and alleviating the phenomenon of electron overflow.

[0074] Exemplarily, the material of the third doping layer 3052 contains Al c Ga 1-c N, where 0.2 < c < 0.8. The doping concentration of the third doping layer 3052 is 1E19 cm -3 ~2E19 cm -3 , and the thickness of the third doping layer 3052 is between 30 nm and 450 nm. The material of the fourth doping layer 3051 contains Al d Ga 1-d N, where 0.2 < d < 0.8. The doping concentration of the fourth doping layer 3051 is 5E17 cm -3 ~5E18 cm -3 , and the thickness of the fourth doping layer 3051 is between 20 nm and 300 nm.

[0075] In this embodiment, the thickness of the first confinement layer 301 is between 500 nm and 700 nm, and the thickness of the second confinement layer 305 is also between 500 nm and 700 nm, but it is not limited thereto.

[0076] Please continue to refer to Figure 1 As shown, the first buffer layer 302 is disposed between the first confinement layer 301 and the electrode contact layer 303, and the second buffer layer 304 is disposed between the electrode contact layer 303 and the second confinement layer 305. The materials of the first buffer layer 302 and the second buffer layer 304 both contain unintentionally doped GaN, and the thicknesses of the first buffer layer 302 and the second buffer layer 304 are both between 5 nm and 20 nm.

[0077] The first buffer layer 302 and the second buffer layer 304 are provided on both sides of the electrode contact layer 303, which can buffer the lattice mismatch between the first confinement layer 301 and the electrode contact layer 303 and between the second confinement layer 305 and the electrode contact layer 303, that is, buffer the lattice mismatch between AlGaN and InGaN, and reduce the generation of dislocations.

[0078] In summary, in the semiconductor light-emitting element provided by the present invention, both the first confinement layer 301 and the second confinement layer 305 include multiple layers of highly doped layers and multiple layers of low doped layers. The highly doped layers and the low doped layers are alternately stacked to form multiple capacitor structures, so that the current can be extended laterally multiple times in the n-type semiconductor layer 300, thereby improving the lateral extension capability of the current, avoiding current congestion, and improving the luminous efficiency of the semiconductor light-emitting element.

[0079] In addition, a first buffer layer 302 and a second buffer layer 304 are provided on both sides of the electrode contact layer 303, which can buffer the lattice mismatch between the first limiting layer 301 and the electrode contact layer 303 and between the second limiting layer 305 and the electrode contact layer 303, thereby reducing the generation of dislocations.

[0080] Furthermore, both the first confinement layer 301 and the second confinement layer 305 are made of aluminum. Due to the influence of the aluminum component, the potential barrier of the first confinement layer 301 and the second confinement layer 305 is increased relative to the electrode contact layer 303. Electron flow requires more energy, thereby improving the lateral expansion of electrons within the electrode contact layer 303 between the first confinement layer 301 and the second confinement layer 305. Simultaneously, the increased Al component in the first confinement layer 301 and the second confinement layer 305 raises the potential barrier, resulting in less absorption of light emitted by the radiative recombination of the quantum well layer 400 by the first confinement layer 301 and the second confinement layer 305, thus improving light extraction efficiency and luminous efficiency.

[0081] Furthermore, in the first confinement layer 301, the Al composition of each doped layer gradually decreases from the distance from the electrode contact layer 303 to the distance from the distance from the electrode contact layer 303. In the second confinement layer 305, the Al composition of each doped layer gradually decreases from the distance from the distance from the electrode contact layer 303 to the distance from the distance from the electrode contact layer 303. That is, from the substrate 100 to the quantum well layer 400, the Al composition in the first confinement layer 301 gradually decreases, while the Al composition in the second confinement layer 305 gradually increases. This provides a stress buffering effect and reduces the lattice mismatch between the first confinement layer 301 and the second confinement layer 305 and the electrode contact layer 303. At the same time, electrons flow from the electrode contact layer 303 to the second confinement layer 305 and then to the quantum well layer 400. When approaching the quantum well layer 400, the potential barrier of the second confinement layer 305 increases, which is equivalent to an electron blocking layer, hindering the passage of electrons and alleviating the phenomenon of electron overflow.

[0082] Furthermore, the electrode contact layer 303 is made of InGaN, which, compared to existing GaN, can reduce contact resistance, lower voltage, and improve luminous efficiency.

[0083] Furthermore, compared to conventional n-type semiconductor layers, in the n-type semiconductor layer 300 provided by the present invention, only the electrode contact layer 303 has a doping concentration greater than 2E19cm⁻¹. -3 The doping concentrations of the first confinement layer 301 and the second confinement layer 305 are both lower than the doping concentration of the electrode contact layer 303, resulting in a relatively low overall doping concentration of the n-type semiconductor layer 300. This reduces defects caused by doping, decreases leakage channels, and improves the crystal quality and antistatic capability of the n-type semiconductor layer 300.

[0084] Accordingly, the present invention also provides a method for preparing a semiconductor light-emitting element, for preparing the semiconductor light-emitting element as described above.

[0085] Figure 4 This is a flowchart illustrating a method for fabricating a semiconductor light-emitting element according to an embodiment of the present invention. Please refer to... Figure 4 The method for preparing a semiconductor light-emitting element provided by the present invention includes the following steps:

[0086] Step S1: Provide a substrate;

[0087] Step S2: An n-type semiconductor layer is formed on the substrate. The n-type semiconductor layer includes a first confinement layer, a first buffer layer, an electrode contact layer, a second buffer layer, and a second confinement layer formed sequentially on the substrate. The first confinement layer and the second confinement layer each include multiple highly doped layers and multiple low-doped layers. The doping concentration of the highly doped layer is greater than the doping concentration of the low-doped layer. The highly doped layer and the low-doped layer are alternately stacked.

[0088] Step S3: A quantum well layer and a p-type semiconductor layer are sequentially formed on the n-type semiconductor layer.

[0089] Next, we will combine Figure 4 and Figures 1 to 3 The method for fabricating a semiconductor light-emitting element provided in the embodiments of the present invention will be described in detail.

[0090] In step S1, please refer to Figure 1 As shown, a substrate 100 is provided.

[0091] In this embodiment, the substrate 100 may be a substrate made of sapphire, GaN, SiC, Si, Ge, or ZnO, but is not limited thereto. Furthermore, the thickness of the substrate 100 is not limited.

[0092] In step S2, please refer to Figures 1 to 3 As shown, an n-type semiconductor layer 300 is formed on the substrate 100. The n-type semiconductor layer 300 includes a first confinement layer 301, a first buffer layer 202, an electrode contact layer 303, a second buffer layer 304, and a second confinement layer 305 sequentially formed on the substrate 100. The first confinement layer 301 and the second confinement layer 305 each include multiple highly doped layers and multiple low doped layers. The doping concentration of the highly doped layer is greater than the doping concentration of the low doped layer. The highly doped layer and the low doped layer are alternately stacked.

[0093] First, before forming the n-type semiconductor layer 300, an unintentionally doped layer 200 may also be formed on the substrate 100.

[0094] Next, a first confinement layer 301 is formed on the unintentionally doped layer 200. The first confinement layer 301 includes multiple first doped layers 3011 and multiple second doped layers 3012, which are stacked alternately. For example, the logarithm of the stacked first doped layers 3011 and second doped layers 3012 may be between 1 and 10.

[0095] Specifically, a first doped layer 3011, a second doped layer 3012, a first doped layer 3011, a second doped layer 3012, ..., a first doped layer 3011 and a second doped layer 3012 are sequentially formed on the unintentionally doped layer 200. The logarithm of the first doped layer 3011 and the second doped layer 3012 is between 1 and 10. For example, there are 5 layers of the first doped layer 3011 and 5 layers of the second doped layer 3012.

[0096] Both the materials of the first doping layer 3011 and the second doping layer 3012 include AlGaN, and the Al component of each doping layer in the first confinement layer 301 gradually decreases from the side far away from the electrode contact layer 303 to the side close to the electrode contact layer 303. Exemplarily, the material of the first doping layer 3011 includes Al a Ga 1-a N, where 0.2 < a < 0.8, the doping concentration of the first doping layer 3011 is 1E19 cm -3 ~2E19 cm -3 , and the thickness of the first doping layer 3011 ranges from 30 nm to 450 nm. The material of the second doping layer 3012 includes Al b Ga 1-b N, where 0.2 < b < 0.8, the doping concentration of the second doping layer 3012 is 5E17 cm -3 ~5E18 cm -3 , and the thickness of the second doping layer 3012 ranges from 20 nm to 300 nm. The thickness of the first confinement layer 301 ranges from 500 nm to 700 nm.

[0097] Next, an electrode contact layer 303 is formed on the second doping layer 3012 on the top layer.

[0098] The electrode contact layer 303 includes In h Ga 1-h N, where 0 < h ≤ 0.1, and the doping concentration of the electrode contact layer 303 is greater than the doping concentrations of the first confinement layer 301 and the second confinement layer 305. Exemplarily, the doping concentration of the electrode contact layer 303 is 2E19 cm -3 ~1E20 cm -3 , and the thickness of the electrode contact layer 303 ranges from 300 nm to 600 nm.

[0099] In this embodiment, before forming the electrode contact layer 303, a first buffer layer 302 can also be formed on the second doping layer 3012 on the top layer, and after forming the electrode contact layer 303, a second buffer layer 304 can also be formed on the electrode contact layer 303. The materials of both the first buffer layer 302 and the second buffer layer 304 include unintentionally doped GaN, and the thicknesses of both the first buffer layer 302 and the second buffer layer 304 range from 5 nm to 20 nm.

[0100] Next, a second confinement layer 305 is formed on the second buffer layer 304. The second confinement layer 305 includes multiple layers of third doped layers 3052 and multiple layers of fourth doped layers 3051, and the third doped layers 3052 and the fourth doped layers 3051 are alternately stacked in sequence. Exemplarily, the number of pairs of the third doped layers 3052 and the fourth doped layers 3051 is between 1 and 10.

[0101] Specifically, a fourth doped layer 3051, a third doped layer 3052, a fourth doped layer 3051, a third doped layer 3052, ……, a fourth doped layer 3051, and a third doped layer 3052 are sequentially formed on the second buffer layer 304. Among them, the number of pairs of the fourth doped layer 3051 and the third doped layer 3052 is between 1 and 10. For example, there are 5 layers of the fourth doped layer 3051 and 5 layers of the third doped layer 3052.

[0102] The materials of the third doped layer 3052 and the fourth doped layer 3051 both contain AlGaN, and the Al component of each doped layer in the second confinement layer 305 gradually decreases from the layer far from the electrode contact layer 303 to the layer close to the electrode contact layer 303. Exemplarily, the material of the third doped layer 3052 contains Al c Ga 1-c N, where 0.2 < c < 0.8, the doping concentration of the third doped layer 3052 is 1E19 cm -3 ~2E19 cm -3 , and the thickness of the third doped layer 3052 is between 30 nm and 450 nm. The material of the fourth doped layer 3051 contains Al d Ga 1-d N, where 0.2 < d < 0.8, the doping concentration of the fourth doped layer 3051 is 5E17 cm -3 ~5E18 cm -3 , and the thickness of the fourth doped layer 3051 is between 20 nm and 300 nm. The thickness of the second confinement layer 305 is between 500 nm and 700 nm.

[0103] In step S3, as shown in Figure 3 , a quantum well layer 400 and a p-type semiconductor layer 500 are sequentially formed on the n-type semiconductor layer 300. Specifically, a quantum well layer 400 is formed on the topmost third doped layer 3052, and a p-type semiconductor layer 500 is formed on the quantum well layer 400.

[0104] In the method for fabricating a semiconductor light-emitting element provided by the present invention, both the first confinement layer 301 and the second confinement layer 305 include multiple layers of highly doped layers and multiple layers of low doped layers. The highly doped layers and the low doped layers are stacked alternately to form multiple capacitor structures, so that the current can be extended laterally multiple times in the n-type semiconductor layer 300, thereby improving the lateral extension capability of the current, avoiding current congestion, and improving the luminous efficiency of the semiconductor light-emitting element.

[0105] In addition, a first buffer layer 302 and a second buffer layer 304 are provided on both sides of the electrode contact layer 303, which can buffer the lattice mismatch between the first limiting layer 301 and the electrode contact layer 303 and between the second limiting layer 305 and the electrode contact layer 303, thereby reducing the generation of dislocations.

[0106] Furthermore, both the first confinement layer 301 and the second confinement layer 305 are made of aluminum. Due to the influence of the aluminum component, the potential barrier of the first confinement layer 301 and the second confinement layer 305 is increased relative to the electrode contact layer 303. Electron flow requires more energy, thereby improving the lateral expansion of electrons within the electrode contact layer 303 between the first confinement layer 301 and the second confinement layer 305. Simultaneously, the increased Al component in the first confinement layer 301 and the second confinement layer 305 raises the potential barrier, resulting in less absorption of light emitted by the radiative recombination of the quantum well layer 400 by the first confinement layer 301 and the second confinement layer 305, thus improving light extraction efficiency and luminous efficiency.

[0107] Furthermore, in the first confinement layer 301, the Al composition of each doped layer gradually decreases from the distance from the electrode contact layer 303 to the distance from the distance from the electrode contact layer 303. In the second confinement layer 305, the Al composition of each doped layer gradually decreases from the distance from the electrode contact layer 303 to the distance from the distance from the electrode contact layer 303. That is, from the substrate 100 to the quantum well layer 400, the Al composition in the first confinement layer 301 gradually decreases, while the Al composition in the second confinement layer 305 gradually increases. This provides a stress buffering effect and reduces the lattice mismatch between the first and second confinement layers 301 and the electrode contact layer 303. At the same time, electrons flow from the electrode contact layer 303 to the second confinement layer 305 and then to the quantum well layer 400. When approaching the quantum well layer 400, the potential barrier of the second confinement layer 305 increases, which is equivalent to an electron blocking layer, hindering the passage of electrons and alleviating the phenomenon of electron overflow.

[0108] Furthermore, the electrode contact layer 303 is made of InGaN, which, compared to existing GaN, can reduce contact resistance, lower voltage, and improve luminous efficiency.

[0109] Furthermore, compared to conventional n-type semiconductor layers, in the n-type semiconductor layer 300 provided by the present invention, only the electrode contact layer 303 has a doping concentration greater than 2E19cm⁻¹. -3 The doping concentrations of the first confinement layer 301 and the second confinement layer 305 are both lower than the doping concentration of the electrode contact layer 303, resulting in a relatively low overall doping concentration of the n-type semiconductor layer 300. This reduces defects caused by doping, decreases leakage channels, and improves the crystal quality and antistatic capability of the n-type semiconductor layer 300.

[0110] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A semiconductor light-emitting element, comprising a substrate, an n-type semiconductor layer, a quantum well layer, and a p-type semiconductor layer stacked sequentially from bottom to top, characterized in that, The n-type semiconductor layer includes a first confinement layer, a first buffer layer, an electrode contact layer, a second buffer layer, and a second confinement layer stacked sequentially from bottom to top. The first confinement layer and the second confinement layer each include multiple highly doped layers and multiple low-doped layers. The doping concentration of the highly doped layer is greater than that of the low-doped layer, and the highly doped layer and the low-doped layer are stacked alternately.

2. The semiconductor light-emitting element according to claim 1, characterized in that, The adjacent highly doped layer and the low doped layer are considered as a pair of doped layers, and the number of doped layers in the first confinement layer and the second confinement layer is between 1 and 10.

3. The semiconductor light-emitting element according to claim 2, characterized in that, The first confinement layer includes a first doped layer and a second doped layer stacked alternately in sequence. The doping concentration of the first doped layer is greater than that of the second doped layer, and in each pair of doped layers, the first doped layer is closer to the substrate, and the second doped layer is closer to the electrode contact layer.

4. The semiconductor light-emitting element according to claim 3, characterized in that, The thickness of the first doped layer is greater than the thickness of the second doped layer.

5. The semiconductor light-emitting element according to claim 3, characterized in that, Both the first doped layer and the second doped layer are made of AlGaN, and the Al composition of each doped layer in the first confinement layer gradually decreases from the distance from the electrode contact layer to the distance from the electrode contact layer.

6. The semiconductor light-emitting element according to claim 5, characterized in that, The material of the first doped layer comprises Al a Ga 1-a N, where 0.2 < a < 0.8, the doping concentration of the first doped layer is 1E19 cm -3 ~ 2E19 cm -3 .

7. The semiconductor light-emitting element according to claim 5, characterized in that, The material of the second doping layer contains Al b Ga 1-b N, where 0.2 < b < 0.8, and the doping concentration of the second doping layer is 5E17 cm -3 ~5E18 cm -3 .

8. The semiconductor light-emitting element according to claim 3, characterized in that, The second confinement layer includes a third doped layer and a fourth doped layer stacked alternately in sequence. The doping concentration of the third doped layer is greater than that of the fourth doped layer. In each pair of doped layers, the third doped layer is closer to the quantum well layer, and the fourth doped layer is closer to the electrode contact layer.

9. The semiconductor light-emitting element according to claim 8, characterized in that, The thickness of the third doped layer is greater than the thickness of the fourth doped layer.

10. The semiconductor light-emitting element according to claim 8, characterized in that, The materials of the third doped layer and the fourth doped layer both contain AlGaN, and the Al composition of each doped layer in the second confinement layer gradually decreases from the distance from the electrode contact layer to the distance from the electrode contact layer.

11. The semiconductor light-emitting element according to claim 10, characterized in that, The material of the third doping layer contains Al c Ga 1-c N, where 0.2 < c < 0.8, and the doping concentration of the third doping layer is 1E19 cm -3 ~2E19 cm -3 .

12. The semiconductor light-emitting element according to claim 10, characterized in that, The material of the fourth doped layer contains Al d Ga 1-d N, where 0.2 < d < 0.8, and the doping concentration of the fourth doped layer is 5E17 cm -3 ~5E18 cm -3 .

13. The semiconductor light-emitting element according to claim 8, characterized in that, The thickness of the first doped layer is between 30 nm and 450 nm, the thickness of the second doped layer is between 20 nm and 300 nm, and the thickness of the first confinement layer is between 500 nm and 700 nm; the thickness of the third doped layer is between 30 nm and 450 nm, the thickness of the fourth doped layer is between 20 nm and 300 nm, and the thickness of the second confinement layer is between 500 nm and 700 nm.

14. The semiconductor light-emitting element according to claim 1, characterized in that, The material of the electrode contact layer contains In. h Ga 1-h N, where 0 < h ≤ 0.1, and the doping concentration of the electrode contact layer is greater than the doping concentration of the first confinement layer and the second confinement layer.

15. The semiconductor light-emitting element according to claim 14, characterized in that, The doping concentration of the electrode contact layer is 2E19cm⁻¹. -3 ~1E20 cm -3 The thickness of the electrode contact layer is between 300 nm and 600 nm.

16. The semiconductor light-emitting element according to claim 1, characterized in that, Both the first buffer layer and the second buffer layer are made of GaN that is not intentionally doped, and the thickness of both the first buffer layer and the second buffer layer is between 5 nm and 20 nm.

17. A method for fabricating a semiconductor light-emitting element, characterized in that, Includes the following steps: Provide a substrate; An n-type semiconductor layer is formed on the substrate. The n-type semiconductor layer includes a first confinement layer, a first buffer layer, an electrode contact layer, a second buffer layer, and a second confinement layer formed sequentially on the substrate. The first confinement layer and the second confinement layer each include multiple highly doped layers and multiple low-doped layers. The doping concentration of the highly doped layer is greater than the doping concentration of the low-doped layer. The highly doped layer and the low-doped layer are alternately stacked. A quantum well layer and a p-type semiconductor layer are sequentially formed on the n-type semiconductor layer.

18. The method for fabricating a semiconductor light-emitting element according to claim 17, characterized in that, The adjacent highly doped layer and the low doped layer are considered as a pair of doped layers, and the number of doped layers in the first confinement layer and the second confinement layer is between 1 and 10.

19. The method for fabricating a semiconductor light-emitting element according to claim 18, characterized in that, The first confinement layer includes a first doped layer and a second doped layer stacked alternately in sequence. The doping concentration of the first doped layer is greater than that of the second doped layer, and in each pair of doped layers, the first doped layer is closer to the substrate, and the second doped layer is closer to the electrode contact layer.

20. The method for fabricating a semiconductor light-emitting element according to claim 19, characterized in that, The thickness of the first doped layer is greater than the thickness of the second doped layer.

21. The method for fabricating a semiconductor light-emitting element according to claim 19, characterized in that, Both the first doped layer and the second doped layer are made of AlGaN, and the Al composition of each doped layer in the first confinement layer gradually decreases from the distance from the electrode contact layer to the distance from the electrode contact layer.

22. The method for fabricating a semiconductor light-emitting element according to claim 21, characterized in that, The material of the first doping layer contains Al a Ga 1-a N, where 0.2 < a < 0.8, and the doping concentration of the first doping layer is 1E19 cm -3 ~2E19 cm -3 .

23. The method for fabricating a semiconductor light-emitting element according to claim 21, characterized in that, The material of the second doping layer contains Al b Ga 1-b N, where 0.2 < b < 0.8, and the doping concentration of the second doping layer is 5E17 cm -3 ~5E18 cm -3 .

24. The method for fabricating a semiconductor light-emitting element according to claim 19, characterized in that, The second confinement layer includes a third doped layer and a fourth doped layer stacked alternately in sequence. The doping concentration of the third doped layer is greater than that of the fourth doped layer. In each pair of doped layers, the third doped layer is closer to the quantum well layer, and the fourth doped layer is closer to the electrode contact layer.

25. The method for fabricating a semiconductor light-emitting element according to claim 24, characterized in that, The thickness of the third doped layer is greater than the thickness of the fourth doped layer.

26. The method for fabricating a semiconductor light-emitting element according to claim 24, characterized in that, The materials of the third doped layer and the fourth doped layer both contain AlGaN, and the Al composition of each doped layer in the second confinement layer gradually decreases from the distance from the electrode contact layer to the distance from the electrode contact layer.

27. The method for fabricating a semiconductor light-emitting element according to claim 26, characterized in that, The material of the third doping layer contains Al c Ga 1-c N, where 0.2 < c < 0.8, and the doping concentration of the third doping layer is 1E19 cm -3 ~2E19 cm -3 .

28. The method for fabricating a semiconductor light-emitting element according to claim 26, characterized in that, The material of the fourth doped layer contains Al d Ga 1-d N, where 0.2 < d < 0.8, and the doping concentration of the fourth doped layer is 5E17 cm -3 ~5E18 cm -3 .

29. The method for fabricating a semiconductor light-emitting element according to claim 24, characterized in that, The thickness of the first doped layer is between 30 nm and 450 nm, the thickness of the second doped layer is between 20 nm and 300 nm, and the thickness of the first confinement layer is between 500 nm and 700 nm; the thickness of the third doped layer is between 30 nm and 450 nm, the thickness of the fourth doped layer is between 20 nm and 300 nm, and the thickness of the second confinement layer is between 500 nm and 700 nm.

30. The method for fabricating a semiconductor light-emitting element according to claim 17, characterized in that, The material of the electrode contact layer contains In. h Ga 1-h N, where 0 < h ≤ 0.1, and the doping concentration of the electrode contact layer is greater than the doping concentration of the first confinement layer and the second confinement layer.

31. The method for fabricating a semiconductor light-emitting element according to claim 30, characterized in that, The doping concentration of the electrode contact layer is 2E19cm⁻¹. -3 ~1E20 cm -3 The thickness of the electrode contact layer is between 300 nm and 600 nm.

32. The method for fabricating a semiconductor light-emitting element according to claim 17, characterized in that, Both the first buffer layer and the second buffer layer are made of GaN that is not intentionally doped, and the thickness of both the first buffer layer and the second buffer layer is between 5 nm and 20 nm.

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