Power supply components and chip carrier

Abstract

The present invention provides a power supply component and a wafer stage, the power supply component having sufficient strength. The power supply component (50) includes: an electrode-side terminal (51), an insert (52), a connector (53), and a cable (56). The electrode-side terminal (51) is formed of a high-melting-point metal material and is engaged with an electrode embedded in a ceramic substrate. The insert (52) is formed of a Cu-containing material and has a joint portion (52a) that directly engages with the electrode-side terminal (51) without the aid of solder and a hole portion (52b) provided on the opposite side of the joint portion (52a). The connector (53) is formed of a Cu-containing material and has a socket portion (53a) that is electrically connected to another conductive component different from the power supply component (50) and a recess portion (53b) provided on the opposite side of the socket portion (53a). The cable (56) is made of Cu-containing material, with one end engaged with the insert (52) in a state of being inserted into the hole (52b) of the insert (52), and the other end engaged with the connector (53) in a state of being inserted into the recess (53b) of the connector (53).

Description

Technical Field

[0001] This invention relates to power supply components and wafer mounting stages. Background Technology

[0002] Semiconductor manufacturing apparatuses are used in etching apparatuses, ion implantation apparatuses, electron beam exposure apparatuses, etc., for adsorbing or heating / cooling wafers. Among these semiconductor manufacturing apparatuses, a known example includes: a ceramic electrostatic chuck having a wafer placement surface and housing electrostatic electrodes and heater electrodes; and a metal substrate attached to a side of the electrostatic chuck opposite to the wafer placement surface. Patent Document 1 discloses a power supply component for supplying power to the electrodes (electrostatic electrodes, heater electrodes) implanted in the electrostatic chuck of the aforementioned semiconductor manufacturing apparatus. The power supply component includes: an electrode-side terminal that engages with the electrode; a flexible cable whose upper end is connected to the electrode-side terminal; and a female connector that connects to the lower end of the cable. A male connector for an external device is connected to the female connector. According to this power supply component, even if a force pressing towards the electrode is applied to the female connector, the cable deforms and absorbs the force, thus preventing damage to the electrostatic chuck.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-191626 Summary of the Invention

[0006] However, in manufacturing the aforementioned power supply components, sometimes a cable insertion hole is provided on the Mo electrode side terminal, and the upper end of a Cu cable is inserted into this hole for bonding using electron beam welding or laser beam welding. However, in these welding methods, since the temperature does not rise to near the melting point of Mo, it is difficult to form a Mo-Cu alloy. Sometimes the molten Cu from the cable does not bond with the inner surface of the hole on the electrode side terminal but only makes contact. Furthermore, during the solidification of the molten Cu, pores sometimes form at the Cu-Mo interface. Therefore, sometimes it is not possible to obtain sufficient bonding strength between the Mo electrode side terminal and the Cu cable.

[0007] The present invention was implemented to solve the above-mentioned problems, and its main objective is to provide a power supply component with sufficient strength.

[0008] The power supply component of the present invention is a power supply component for supplying power to electrodes implanted in a ceramic substrate, characterized in that it comprises:

[0009] An electrode-side terminal, formed of a high-melting-point metal material, is coupled to the electrode;

[0010] An insert, formed of a Cu-containing material, having a joint portion that directly engages with the electrode-side terminal without the aid of solder and a hole portion provided on the opposite side of the joint portion;

[0011] A connector, formed of a Cu-containing material, having a connector portion electrically connected to another conductive component different from the power supply component, and a recess provided on the opposite side of the connector portion; and

[0012] A cable formed of a Cu-containing material, one end of which is engaged with the insert in a state of being inserted into the hole of the insert, and the other end of which is engaged with the connector in a state of being inserted into the recess of the connector.

[0013] In this power supply component, the joint of the insert, made of a Cu-containing material, is directly joined to the electrode-side terminal, made of a high-melting-point metal, without the aid of solder. Therefore, the electrode-side terminal and the insert are joined with sufficient strength. Furthermore, one end of the cable, made of Cu-containing material, is joined by inserting into the hole of the insert, and the other end of the cable is joined by inserting into the recess of the connector, also made of Cu-containing material. This joining is a connection between components made of Cu-containing material, thus achieving sufficient strength. Therefore, this power supply component possesses sufficient strength.

[0014] In the power supply component of the present invention, the electrode-side terminal is preferably made of a Mo-containing material. Accordingly, when the ceramic substrate is made of an alumina-containing material, cracks or the like can be prevented between the electrode-side terminal and the ceramic substrate. This is because alumina and Mo have similar coefficients of thermal expansion, thus reducing the stress caused by their difference in thermal expansion.

[0015] The wafer stage of the present invention includes:

[0016] A ceramic substrate having a wafer mounting surface on its surface;

[0017] An electrode, which is implanted in the ceramic substrate; and

[0018] A power supply component is inserted into the ceramic substrate on the side opposite to the wafer mounting surface and is engaged with the electrode.

[0019] The wafer stage is characterized in that...

[0020] The power supply component is the power supply component of the present invention described above, and the electrode side terminal is connected to the electrode.

[0021] In this wafer stage, the bonding portion of the insert, made of Cu-containing material, is directly bonded to the electrode-side terminal, made of a high-melting-point metal, without the aid of solder. Therefore, the electrode-side terminal and the insert are bonded with sufficient strength. Furthermore, one end of the cable, made of Cu-containing material, is bonded by inserting into the hole of the insert, and the other end of the cable is bonded by inserting into the recess of a connector made of Cu-containing material. This bonding involves the components made of Cu-containing material bonding with each other, thus achieving sufficient strength. Therefore, this power supply component possesses sufficient strength.

[0022] In the wafer stage of the present invention, it is preferable that the ceramic substrate is formed of an alumina-containing material and the electrode-side terminals are formed of a Mo-containing material. This prevents cracks and other defects from forming between the electrode-side terminals and the ceramic substrate. This is because alumina and Mo have similar coefficients of thermal expansion, thus reducing stress caused by their difference in thermal expansion. Attached Figure Description

[0023] Figure 1 This is a cross-sectional view showing the outline of the wafer stage 10.

[0024] Figure 2 This is a longitudinal cross-sectional view showing the general structure of the power supply component 50.

[0025] Figure 3 This is a manufacturing process diagram of power supply component 50.

[0026] Figure 4 This is a longitudinal cross-sectional view showing the general structure of the power supply component 150.

[0027] Figure 5 It is a graph showing the fracture strength of the implementation method and the comparison method.

[0028] Symbol Explanation

[0029] 10…Wafer stage, 20…Ceramic substrate, 20a…Wafer placement surface, 22…Electrostatic electrode, 22a…Through hole, 23…Bracket bonding layer, 24…Heater electrode, 24a…Through hole, 30…Cooling substrate, 32…Refrigerant flow path, 40…Joint layer, 42, 44…Insulating tube, 50, 50A, 50B…Power supply component, 51…Electrode side terminal, 52…Insert, 52a…Joint, 52b…Hole, 53…Connector, 53a…Socket, 53b…Recess, 54…Lower component, 55…Upper component, 56…Cable, 56a…Upper end, 56b…Lower end, 62…DC power supply, 64…Heater power supply, 150…Power supply component, 151…Electrode side terminal, 151a…Hole, W…Wafer. Detailed Implementation

[0030] Figure 1This is a cross-sectional view showing the general configuration of the wafer stage 10 in this embodiment (a cross-sectional view of the wafer stage 10 cut along a plane including the central axis of the wafer stage 10). Figure 2 This is a longitudinal cross-sectional view showing the general structure of the power supply component 50 (a cross-sectional view of the power supply component 50 cut off by a plane containing the central axis of the power supply component 50). It should be noted that in the following description, up and down, left and right, and front and back are sometimes used; however, up and down, left and right, and front and back are only relative positional relationships.

[0031] The wafer stage 10 is a component used to process the wafer W. For example... Figure 1 As shown, the wafer stage 10 includes: a ceramic substrate 20, an electrostatic electrode 22, a heater electrode 24, a cooling substrate 30, a bonding layer 40, and power supply components 50A and 50B.

[0032] The ceramic substrate 20 is a circular plate-shaped component with a wafer mounting surface 20a on its surface. The ceramic substrate 20 is formed of a ceramic-containing material. The ceramic-containing material is a material whose main component is ceramic, and in addition to ceramic, it may also contain components derived from sintering aids (such as rare earth elements), unavoidable components, etc. The main component refers to a component that occupies 50% or more by mass in the whole (the same applies below). Examples of ceramics include alumina and aluminum nitride.

[0033] An electrostatic electrode 22 and a heater electrode 24 are embedded in a ceramic substrate 20. The electrostatic electrode 22 is embedded on the side closer to the wafer mounting surface 20a than the heater electrode 24. The electrodes 22 and 24 are formed of materials containing, for example, W, Mo, WC, MoC, etc. The electrostatic electrode 22 is a unipolar electrostatic electrode in the shape of a disc or a mesh. The layer of the ceramic substrate 20 above the electrostatic electrode 22 functions as a dielectric layer. A DC power supply 62 for electrostatic adsorption is connected to the electrostatic electrode 22 via a power supply component 50A. The heater electrode 24 is wired from one end to the other in a single stroke, covering the entire wafer mounting surface 20a in a top view. A heater power supply 64 is connected to one end of the heater electrode 24 via a power supply component 50B. Although not shown, the other end of the heater electrode 24 is also connected to the heater power supply 64 via a power supply component 50B, similarly to one end of the heater electrode 24.

[0034] The cooling substrate 30 is a circular plate-shaped component with an internally circulating refrigerant flow path 32. The refrigerant flow path 32 is formed in a single-stroke manner, covering the entire surface of the ceramic substrate 20 in a top view. One end and the other end of the refrigerant flow path 32 are connected to a refrigerant circulation pump (not shown) that functions to regulate the refrigerant temperature. The cooling substrate 30 is made of a conductive material, for example, containing a metal. Examples of conductive materials include composite materials and metals. Examples of composite materials include metal composites (also called metal matrix composites (MMCs)). Examples of MMCs include materials containing Si, SiC, and Ti, and materials obtained by impregnating Al and / or Si in a porous SiC body. Materials containing Si, SiC, and Ti are referred to as SiSiCTi, materials obtained by impregnating Al in a porous SiC body are referred to as AlSiC, and materials obtained by impregnating Si in a porous SiC body are referred to as SiSiC. Examples of metals include Al, Ti, Mo, or alloys thereof.

[0035] The bonding layer 40 bonds the lower surface of the ceramic substrate 20 and the upper surface of the cooled substrate 30. The bonding layer 40 can be, for example, a metal bonding layer formed by solder or brazing filler metal. For example, a metal bonding layer can be formed using TCB (Thermal Compression Bonding). TCB refers to a known method of bonding two components by clamping a metal bonding material between them and applying pressure to bond the two components at a temperature below the solidus temperature of the metal bonding material.

[0036] The power supply component 50A is inserted through a through-hole penetrating the cooling substrate 30 in the vertical direction and through a through-hole penetrating the bonding layer 40 in the vertical direction, and into a through-hole 22a extending from the lower surface of the ceramic substrate 20 to the electrostatic electrode 22, with its upper end engaged with the electrostatic electrode 22 in this state. An insulating tube 42 is inserted through the through-hole penetrating the cooling substrate 30 in the vertical direction and through the through-hole penetrating the bonding layer 40 in the vertical direction. The power supply component 50A passes through the interior of this insulating tube 42.

[0037] The power supply component 50B is inserted through a through-hole penetrating the cooling substrate 30 in the vertical direction and through a through-hole penetrating the bonding layer 40 in the vertical direction, and into a through-hole 24a extending from the lower surface of the ceramic substrate 20 to the heater electrode 24, with its upper end engaged with the heater electrode 24 in this state. An insulating tube 44 is inserted through the through-hole penetrating the cooling substrate 30 in the vertical direction and through the through-hole penetrating the bonding layer 40 in the vertical direction. The power supply component 50B passes through the interior of this insulating tube 44.

[0038] Power supply components 50A and 50B are identical in structure except for the cable length. Therefore, power supply components 50A and 50B will not be distinguished below and will be described as power supply component 50.

[0039] like Figure 2 As shown, the power supply component 50 includes: electrode side terminal 51, insert 52, connector 53, and cable 56.

[0040] The electrode-side terminal 51 is a circular plate-shaped component formed of a high-melting-point metal material. The high-melting-point metal material is a material primarily composed of a high-melting-point metal, and may also contain unavoidable components, components contained in the ceramic substrate 20, etc. Examples of high-melting-point metals include Mo and W. If the ceramic substrate 20 is formed of an alumina-containing material, the electrode-side terminal 51 is preferably formed of a Mo-containing material. The electrode-side terminal 51 is brazed to the electrode (electrostatic electrode 22 or heater electrode 24) and the ceramic substrate 20 surrounding the electrode. Examples of brazing filler metals include Au alloys. Examples of Au alloys include AgGe alloys, AuSn alloys, and AuSi alloys. If the electrode-side terminal 51 is formed of a Mo-containing material, an AuGe alloy is preferably used as the brazing filler metal.

[0041] The insert 52 is formed of a Cu-containing material and is a cylindrical component. The Cu-containing material is a material with Cu as the main component, and may contain unavoidable components in addition to Cu. The insert 52 has a joint portion 52a that engages with the electrode-side terminal 51, and a hole portion 52b provided on the opposite side of the joint portion 52a. In this embodiment, the joint portion 52a is the upper surface of the cylinder and is directly engaged with the electrode-side terminal 51 without the aid of solder. Therefore, the strength of the joint portion 52a and the electrode-side terminal 51 is sufficiently improved. Preferably, when the joint portion 52a and the electrode-side terminal 51 are observed with SEM images, no gap is visible at the joint interface.

[0042] The connector 53 is formed of a Cu-containing material and has a socket portion 53a (corresponding to the connector portion of the present invention) and a recess 53b. The socket portion 53a is provided on the lower side of the connector 53 and is electrically connected to a conductive component of an external device (e.g., a DC power supply 62, a heater power supply 64). In this embodiment, the socket portion 53a is a banana plug, and the conductive component of the external device is a banana plug inserted into the banana plug. The recess 53b is a hole provided on the upper side of the connector 53. The connector 53 is obtained by joining a lower component 54 having a socket portion 53a and an upper component 55 having a recess 53b. The joining of the lower component 54 and the upper component 55 can be performed using brazing, electron beam welding, laser beam welding, etc. Since both the lower component 54 and the upper component 55 are formed of a Cu-containing material, the strength of the welded portion of the two components 54 and 55 is sufficiently improved.

[0043] Cable 56 is a flexible cable formed of a Cu-containing material. In this embodiment, cable 56 is a stranded wire of a fine metal wire formed of a Cu-containing material. The upper end 56a of cable 56 is engaged with insert 52 in a state where it is inserted into the hole 52b of insert 52. The lower end 56b of cable 56 is engaged with connector 53 in a state where it is inserted into the recess 53b of connector 53. The joining of cable 56 and insert 52, and the joining of cable 56 and connector 53 can be performed using electron beam welding, laser beam welding, etc. Since cable 56, insert 52, and connector 53 are all formed of a Cu-containing material, the strength of the welded parts is sufficiently improved.

[0044] Next, adopt Figure 3 A manufacturing example of the power supply component 50 (including an example of electrode mounting) will be described. Figure 3 This is a manufacturing process diagram of the power supply component 50. Here, the electrode side terminal 51 is formed of a Mo-containing material, and the insert 52, connector 53 (lower component 54 and upper component 55) and cable 56 are formed of a Cu-containing material.

[0045] First, prepare the electrode-side terminal 51 and the insert 52, and directly join the lower surface of the electrode-side terminal 51 and the upper surface of the insert 52, i.e., the joint 52a (see reference). Figure 3 (A)). As a direct bonding method, for example, the method disclosed in Japanese Patent No. 3602582 can be used. It should be noted that a cylinder (a part without the hole 52b) can be prepared to replace the insert 52, and the cylinder and the electrode side terminal 51 can be directly bonded. Then, the hole 52b is formed in the cylinder, and the cylinder is set as the insert 52.

[0046] Next, the upper end 56a of the cable 56 is inserted into the hole 52b provided on the lower surface of the insert 52 and soldered, and the lower end 56b of the cable 56 is inserted into the recess 53b of the upper component 55 and soldered (see reference). Figure 3 (B)). Electron beam welding, laser beam welding, etc. can be used for this welding.

[0047] Next, the electrode-side terminal 51 is coupled to the electrode (electrostatic electrode 22 or heater electrode 24) implanted in the ceramic substrate 20 and the ceramic substrate 20 surrounding the electrode (see reference). Figure 3 (C)). An Au-containing alloy (e.g., an AuGe alloy) can be used for this bonding. Accordingly, the electrode-side terminal 51 is bonded to the electrode and the ceramic substrate 20 surrounding the electrode by means of a brazing bonding layer 23.

[0048] Finally, the lower surface of the upper component 55 and the upper surface of the lower component 54 are joined together (see reference). Figure 3(D) This yields the power supply component 50. The joining at this point can be performed using brazing, electron beam welding, laser beam welding, or similar methods. It should be noted that a small protrusion for alignment can be pre-formed on the lower surface of the upper component 55, and a small hole that engages with the protrusion can be formed on the upper surface of the lower component 54. The protrusion and the hole are then inserted. This allows for easy alignment of the upper component 55 and the lower component 54.

[0049] Next, the fracture strength of the power supply component 50, which is bonded to the electrodes of the wafer stage 10, will be described. The electrode-side terminal 51 of the power supply component 50 is made of Mo, while the insert 52, connector 53 (lower component 54 and upper component 55), and cable 56 are made of Cu. The power supply component 50 is manufactured and mounted on the electrodes according to the manufacturing example described above. It should be noted that when observing the bonding portion 52a of the insert 52 and the bonding portion of the electrode-side terminal 51 using SEM images, no gap is visible at the bonding interface. As a comparison, a... Figure 4 The power supply component 150 shown was also tested for fracture strength when bonded to the electrodes of the wafer stage 10. The power supply component 150 uses a Mo-made electrode-side terminal 151 with holes, obtained by integrally forming the electrode-side terminal 51 and insert 52 described above. The terminal is bonded using electron beam welding with the upper end 56a of a cable 56 inserted into the hole 151a of the electrode-side terminal 151. Otherwise, it is manufactured in the same manner as the power supply component 50 and mounted on the electrodes of the wafer stage 10. The fracture strength of this embodiment and the comparative embodiment was measured under the same conditions according to "JIS Z 2241: Tensile Testing of Metallic Materials". The results are shown below. Figure 5 .Depend on Figure 5 As can be seen, the fracture strength of this embodiment is approximately four times higher than that of the comparative embodiment. In the comparative embodiment, the electrode-side terminal 151 with the hole deviates from the connection with the cable 56 and breaks; in contrast, in this embodiment, the cable 56 itself breaks. Furthermore, in the comparative embodiment, a gap (pore) is observed at the interface between the electrode-side terminal 151 with the hole and the cable 56.

[0050] In the power supply component 50 described in detail above, the joint portion 52a of the insert 52, made of Cu-containing material, is directly joined to the electrode-side terminal 51, made of a high-melting-point metal material, without the aid of solder. Therefore, the electrode-side terminal 51 and the insert 52 are joined with sufficient strength. Furthermore, the upper end 56a of the cable 56, made of Cu-containing material, is joined by inserting into the hole 52b of the insert 52, and the lower end 56b of the cable 56 is joined by inserting into the recess 53b of the connector 53, made of Cu-containing material. Since this joining is between components made of Cu-containing material, sufficient strength is achieved. Therefore, the power supply component 50 has sufficient strength. As a result, even if the upper limit of the operating temperature of the wafer stage 10 is set to a high temperature (e.g., 300°C), it can be used without any problems.

[0051] Furthermore, the electrode-side terminal 51 is preferably made of a Mo-containing material. Therefore, when the ceramic substrate 20 is made of an alumina-containing material, cracks or the like can be prevented between the electrode-side terminal 51 and the ceramic substrate 20. This is because alumina and Mo have similar coefficients of thermal expansion, thus reducing the stress caused by their difference in thermal expansion.

[0052] It should be noted that the present invention is not limited to any of the above embodiments. Of course, as long as it falls within the technical scope of the present invention, it can be implemented in various ways.

[0053] For example, in the above embodiment, the connector 53 is manufactured by brazing or welding the lower component 54 and the upper component 55. However, it is not necessary to form multiple components together in this way, but rather to form them as a single unit. Accordingly, the manufacturing process of the power supply component 50 does not require the process of brazing or welding the lower component 54 and the upper component 55.

[0054] In the above embodiments, the connector 53 of the power supply component 50A can be fixed to the insulating tube 42, and the connector 53 of the power supply component 50B can be fixed to the insulating tube 44.

[0055] In the above embodiment, an electrostatic electrode 22 and a heater electrode 24 are implanted in the ceramic substrate 20; however, either one can be implanted. Alternatively, a plasma generation electrode can be implanted in the ceramic substrate 20, and the power supply component 50 can be implanted in the electrode in the same way as in the above embodiment.

[0056] In the above embodiment, the connector 53 has a socket portion 53a that serves as a banana plug; however, a banana plug may be provided instead of the socket portion 53a. In this case, the banana plug of the connector 53 is inserted into the banana plug, which serves as a conductive component, of an external device (e.g., a DC power supply 62 or a heater power supply 64) and electrically connected to the external device.

[0057] In the above embodiment, the bonding layer 40 is set as a metal bonding layer; however, it can be set as a resin bonding layer.

Claims

1. A power supply component for supplying power to electrodes implanted in a ceramic substrate, The power supply component is characterized by having: An electrode-side terminal, formed of a high-melting-point metal material, is coupled to the electrode; An insert, formed of a Cu-containing material, having a joint portion that directly engages with the electrode-side terminal without the aid of solder and a hole portion provided on the opposite side of the joint portion; A connector formed of a Cu-containing material, having a connector portion electrically connected to another conductive component different from the power supply component and a recess provided on the opposite side of the connector portion; as well as A cable formed of a Cu-containing material, one end of which is engaged with the insert in a state of being inserted into the hole of the insert, and the other end of which is engaged with the connector in a state of being inserted into the recess of the connector.

2. The power supply component according to claim 1, characterized in that, The electrode side terminals are made of Mo-containing material.

3. A wafer placement stage, comprising: A ceramic substrate having a wafer mounting surface on its surface; An electrode, which is implanted in the ceramic substrate; and A power supply component is inserted into the ceramic substrate on the side opposite to the wafer mounting surface and is engaged with the electrode. The wafer stage is characterized in that... The power supply component is the power supply component as described in claim 1 or 2, and the electrode side terminal is connected to the electrode.

4. The wafer stage according to claim 3, characterized in that, The ceramic substrate is formed of an alumina-containing material. The electrode side terminals are formed of a Mo-containing material.

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