An input circuit, device, and system for a high-power amplifier.

Abstract

This invention discloses an input circuit for a high-power amplifier. The input circuit is positioned between the input terminal and the amplifier's control terminal. The input circuit includes an impedance matching network, a phase balancing network, and a harmonic phase tuning network. The impedance matching network is used for impedance matching, the phase balancing network is used to equalize the synthesized phase of multipath signals, and the harmonic phase tuning network is used to adjust the phase and amplitude of the second harmonic impedance at the high-frequency end. The impedance matching network, phase balancing network, and harmonic phase tuning network work together to match the fundamental impedance. This facilitates fundamental impedance matching, balances branch phases, reduces power combining losses, and optimizes harmonic modulation effects, thereby improving the power and efficiency of power devices.

Description

Technical Field

[0001] This invention belongs to the field of matching technology for semiconductor power devices, and specifically relates to an input circuit, device, and system for a high-power amplifier. Background Technology

[0002] The radio frequency (RF) power amplifier is the most important component in the RF front-end. Its specifications directly affect the performance of the entire system. With the development of communication technology, the system's transmit power has increased accordingly, while the demand for small size remains unchanged. This places higher demands on RF power amplifiers: high power, high efficiency, small circuit area, etc.

[0003] Input / output circuitry plays a crucial role in improving the power and efficiency of RF power amplifiers. This is especially true for high-power devices, which are often composed of multiple power units, such as... Figure 1 As shown, a high-power amplifier contains three power units. These three power units amplify and combine the input signal, and then output the result. The efficiency of the combining process determines the final output power and efficiency. The combining efficiency, in turn, is determined by the input and output circuits. Therefore, a good input / output circuit is crucial for power RF amplifiers, especially high-power RF amplifiers.

[0004] For high-power RF power amplifiers, the input / output circuits must not only achieve basic fundamental impedance matching, but also perform efficient power combining, while precisely controlling harmonic impedance. Finally, miniaturization must also be considered. Figure 2 This is a structural diagram of the input circuit of a traditional high-power amplifier. Figure 3 This is its equivalent circuit diagram. This circuit structure achieves fundamental impedance matching and harmonic impedance phase and amplitude within a certain range through a discrete low-pass network. However, the signal from this input circuit suffers some loss in synthesis performance after passing through the three amplification units of the amplifier. Furthermore, this input circuit has limitations in harmonic control, especially in the high-frequency range (>6GHz), where it is difficult to obtain suitable harmonic impedance phase and amplitude. Therefore, this input circuit does not significantly improve synthesis efficiency, and its improvement on the efficiency of the power amplifier itself in the high-frequency range (>6GHz) is also limited. Summary of the Invention

[0005] To address the aforementioned technical problems, the present invention aims to provide an input circuit, device, and system for a high-power amplifier, which can easily achieve fundamental impedance matching, balance branch phases, reduce power combining losses, and optimize harmonic modulation effects. This, in turn, improves the power and efficiency of power devices.

[0006] To address these problems in the prior art, the technical solution provided by this invention is as follows:

[0007] An input circuit for a high-power amplifier is provided, wherein the input circuit is disposed between the input terminal and the control terminal of the amplifier. The input circuit includes an impedance matching network, a phase balancing network, and a harmonic phase tuning network. The impedance matching network is used for impedance matching, the phase balancing network is used to equalize the synthesized phase of multipath signals, and the harmonic phase tuning network is used to adjust the phase and amplitude of the second harmonic impedance at the high-frequency end. The impedance matching network, the phase balancing network, and the harmonic phase tuning network work together to match the fundamental impedance.

[0008] In a preferred embodiment, the impedance matching network includes a first capacitor connected to the input terminal, the other end of the first capacitor being grounded, and a first inductor connected to the input terminal, the other end of the first inductor being connected to the input terminal of the phase balance network.

[0009] In a preferred embodiment, the phase balancing network includes an impedance-gradient transmission line. The transmission line has a first end face and a second end face, with the diameter gradually increasing from the first end face to the second end face. The first end face of the transmission line is connected to the other end of a first inductor of the impedance matching network. The second end face of the transmission line is connected to one end of a second capacitor, the other end of which is grounded. One end of the second capacitor is also connected to one end of a third capacitor through a second inductor, the other end of which is grounded. One end of the third capacitor is also connected to the input terminal of a harmonic phase tuning network.

[0010] In a preferred embodiment, the second inductor includes at least two sets of sub-second inductors, which are arranged spatially.

[0011] In a preferred embodiment, a grounding module is provided between the second capacitor and the third capacitor.

[0012] In a preferred embodiment, the harmonic phase tuning network includes a fourth capacitor connected to one end of the third capacitor, and the other end of the fourth capacitor is connected to the control terminal of the amplifier via a third inductor.

[0013] In a preferred embodiment, the third inductor includes multiple sets of sub-third inductors, and the number of sub-third inductors is equal to the number of sub-power units of the amplifier.

[0014] In a preferred embodiment, the amplifier and the capacitor of the input circuit are integrated on different chips, and the inductor is a bonded wire inductor.

[0015] The present invention also discloses a radio frequency power amplifier device, including the input circuit of the high power amplifier described in any of the above claims.

[0016] The present invention also discloses a radio frequency power amplifier system, including the radio frequency power amplifier device described above.

[0017] Compared with existing solutions, the advantages of this invention are:

[0018] 1. This input circuit can easily achieve fundamental impedance matching, and its phase equalization network can achieve the function of equalizing the signal phase, reducing power combining loss, thereby improving the power and efficiency of power devices.

[0019] 2. The harmonic phase modulation network of this input circuit has bidirectional positive and negative phase adjustment capabilities. It can effectively adjust the phase and amplitude of the second harmonic impedance at the high-frequency end. This allows for better harmonic modulation, thereby further improving the efficiency of the power amplifier.

[0020] 3. The input circuit integrates the capacitors of the impedance matching network, phase balance network, and harmonic phase modulation network onto a single IPD (passive integrated device), and the inductors are bridged using bonded wires. In this way, the input circuit can reduce the area while taking into account the high Q value of bonded wires. Attached Figure Description

[0021] The present invention will be further described below with reference to the accompanying drawings and embodiments:

[0022] Figure 1 This is a circuit diagram of an existing high-power amplifier;

[0023] Figure 2 This is a structural diagram of a conventional power amplifier input circuit.

[0024] Figure 3 This is an equivalent circuit diagram of a conventional power amplifier input circuit.

[0025] Figure 4 This is a structural diagram of the input circuit of a preferred embodiment of the present invention;

[0026] Figure 5 This is an equivalent circuit diagram of the input circuit of a preferred embodiment of the present invention;

[0027] Figure 6 This is a structural diagram of the input circuit according to another embodiment of the present invention;

[0028] Figure 7 This is a phase simulation data diagram of the input terminal to each power unit of a conventional power amplifier input circuit;

[0029] Figure 8 This is a phase simulation data diagram of the input circuit signal input terminal to each power unit in a preferred embodiment of the present invention;

[0030] Figure 9This is a comparison chart of the harmonic impedance simulation results of the present invention and conventional input circuits. Detailed Implementation

[0031] The above-described solution will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. The implementation conditions used in the embodiments may be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not specified are generally those in routine experiments.

[0032] Example:

[0033] like Figure 4 , 5 As shown, an input circuit for a high-power amplifier is mainly used in high-power amplifiers. It is positioned between an amplifier T1, which includes an input terminal RFin and a control terminal (e.g., a gate). The amplifier is preferably a high-power amplifier. The high-power amplifier T1 is generally composed of multiple power units, such as... Figure 1 As shown, a high-power amplifier contains three power units (T1a, T1b, and T1c). These three power units amplify and combine the input signal, and then output the result. The drain of amplifier T1 serves as the output terminal RFout, and the source of amplifier T1 is grounded.

[0034] This input circuit includes an impedance matching network (IMN), a phase balancing network (PBN), and a harmonic phase tuning network (HPTN). The IMN is primarily used for impedance matching, the PBN is used to equalize the synthesized phase of multipath signals, and the HPTN is used to adjust the phase and amplitude of the second harmonic impedance at the high-frequency end. The IMN, PBN, and HPTN work together to match the fundamental impedance, making fundamental impedance matching more convenient and efficient. This input circuit can precisely control the phase and amplitude of the harmonic impedance, better achieving harmonic modulation and further improving the efficiency of the power amplifier.

[0035] In a preferred embodiment, the impedance matching network IMN includes a first capacitor C1 connected to the input terminal RFin, the other end of the first capacitor C1 being grounded, and a first inductor L1 connected to the input terminal RFin, the other end of the first inductor L1 being connected to the input terminal of the phase balancing network PBN.

[0036] In a preferred embodiment, the phase-balanced network (PBN) includes an impedance-gradient transmission line Ta1. The impedance-gradient transmission line Ta1 has a physical structure that is narrower on the left and wider on the right. Its shape can be a frustum, which serves to achieve impedance gradation. That is, the transmission line Ta1 includes a first end face and a second end face, and the diameter of the first end face gradually increases from the second end face.

[0037] In specific implementations, the first inductor L1 can be integrated using a planar spiral inductor or a microstrip line, or it can be implemented using wire bonding. Preferably, it is implemented using wire bonding, where the first inductor L1 is bridged to the first capacitor C1 and the transmission line Ta1 using wire bonding technology. The first inductor L1 typically consists of multiple leads. This approach can improve the Q value, reduce losses, and increase gain; furthermore, it allows for flexible adjustment of the inductance value to accommodate different frequencies of fundamental and harmonic impedance.

[0038] The first end face of the transmission line Ta1 is connected to the other end of the first inductor L1 of the impedance matching network IMN. The second end face of the transmission line Ta1 is connected to one end of the second capacitor C2. The other end of the second capacitor C2 is grounded. One end of the second capacitor C2 is also connected to one end of the third capacitor C3 through the second inductor L2. The other end of the third capacitor C3 is grounded. The third capacitor C3 is also connected to the input end of the harmonic phase tuning network HPTN.

[0039] In the specific implementation, the second inductor L2 is bridged with the second capacitor C2 and the third capacitor C3 using a wire bonding process. The second inductor L2 is generally composed of multiple leads. On the one hand, this can improve the Q value, reduce losses, and increase gain; on the other hand, it allows for flexible adjustment of the inductance value to accommodate the fundamental and harmonic impedances at different frequencies.

[0040] Preferably, a grounding module Gpad is provided between the second capacitor C2 and the third capacitor C3.

[0041] Preferably, the second inductor L2 includes at least two sets of sub-second inductors (L2u, L2d), each of which is generally composed of multiple leads forming an inductor wire group, with each set of sub-second inductors arranged in space.

[0042] Similarly, the sub-second inductors of the second inductor L2 can also be composed of four or more sub-second inductors, such as... Figure 6 As shown, they are arranged in a spatial arrangement.

[0043] In a preferred embodiment, the harmonic phase tuning network HPTN includes a fourth capacitor C4 connected to one end of the third capacitor C3, and the other end of the fourth capacitor C4 is connected to the control terminal (gate) of the amplifier T1 through the third inductor L3.

[0044] Preferably, the third inductor L3 includes multiple sets of sub-third inductors, the number of which is equal to the number of sub-power units in the amplifier. For example, Figure 1 The amplifier T1 includes three power units (T1a, T1b, T1c), and the third inductor L3 includes three sets of sub-third inductors L3a, L3b and L3c, which are spatially spaced from the sub-second inductors L2u and L2d.

[0045] In the specific implementation, the third inductor L3 is bridged to the fourth capacitor C4 and the control terminal (gate) of the amplifier T1 using a wire bonding process. Each of the three sets of sub-third inductors L3a, L3b, and L3c of the third inductor L3 is generally composed of multiple leads forming an inductor wire group. On the one hand, this can improve the Q value, reduce losses, and increase gain; on the other hand, it allows for flexible adjustment of the inductance value to accommodate the fundamental and harmonic impedances at different frequencies.

[0046] The signal from the input terminal RFin passes through the impedance matching network IMN and splits into two paths. One path passes through path P1 and one sub-inductor group (sub-second inductor) L2u of the second inductor, and then splits into two paths: one path is the sub-third inductor group (sub-third inductor) L3a of path P2 and the third inductor group, reaching the sub-power unit T1a; the other path is the sub-third inductor group L3b of path P3 and the third inductor group, reaching the sub-power unit T1b. The other signal branched from the first inductor group L1 passes through P4 and another sub-inductor group L2d of the second inductor group, and then splits into two paths: one path is the sub-third inductor group L3b of path P5 and the third inductor group, reaching the sub-power unit T1b; the other path is the sub-third inductor group L3c of path P6 and the third inductor group, reaching the sub-power unit T1c. Thus, the signal originating from the input terminal RFin reaches sub-power units T1a, T1b, and T1c, whose electrical lengths are almost identical. Consequently, their phases are also identical, achieving phase equalization. After passing through amplifier T1, this improves the synthesis efficiency of the output signal. This, in turn, reduces losses and increases power and efficiency for the high-power amplifier.

[0047] Similarly, the third inductor group can also consist of five or more sub-inductor groups. An amplifier can also consist of five or more sub-power units. For example... Figure 6 As shown, a high-power amplifier contains five power units (T1a, T1b, T1c, T1d, T1e), a third inductor group consisting of five sub-third inductor groups (L3a, L3b, L3c, L3d, L3e), and a second inductor L2 consisting of four sub-second inductors (L2u1, L2u2, L2d1, L2d2). These five power units amplify and synthesize the input signal, and then output it.

[0048] Figure 7 This provides the phase simulation data from the signal input terminal to each power unit when using a conventional input network. Here, m4 represents the phase value from the signal input terminal to each power unit at the fundamental frequency of 3.6 GHz. m5 represents the phase value from the signal input terminal to each power unit at the second harmonic frequency of 7.2 GHz. Figure 8 This section provides the phase simulation data from the signal input terminal to each power unit when using the input circuit of a preferred embodiment of the present invention. Wherein, m1 is the phase value marker from the signal input terminal to each power unit at the fundamental frequency of 3.6 GHz. m2 is the phase value marker from the signal input terminal to each power unit at the second harmonic frequency of 7.2 GHz. Figure 7 and Figure 8 It can be seen that, compared with conventional input networks, the input circuit of the present invention has a significant advantage in phase consistency.

[0049] In the HPTN harmonic phase tuning network, the fourth capacitor C4 and the third inductor group L3a+L3b+L3c form a series circuit, providing bidirectional phase adjustment. The fourth capacitor C4 achieves negative phase adjustment, while the third inductor group L3a+L3b+L3c achieves positive phase adjustment. This can very effectively reduce the amplitude of the second harmonic at high frequencies. Figure 9 As shown, compared to conventional input networks, the circuit of this invention significantly reduces the second harmonic amplitude at the high-frequency end and broadens the bandwidth. The equivalent inductance Lev of the series circuit formed by the fourth capacitor C4 and the third inductor group L3a+L3b+L3c, and the resonant point of the third capacitor C3, determine the minimum point of the harmonic impedance. This is specifically calculated using the following formula:

[0050]

[0051] Among them, C d3 This is the capacitance value of the third parallel capacitor, C3.

[0052] In a preferred embodiment, the amplifier and the capacitor of the input circuit are integrated on different chips, and the inductor is a bond wire inductor.

[0053] In the specific implementation, the first capacitor C1 of the input matching circuit IMN, the second capacitors C2 and C3 of the phase balancing network PBN, the intermediate grounding module Gpad, and the fourth capacitor C4 of the harmonic phase modulation network HPTN are integrated on a single IPD (passive integrated device), which can effectively reduce the circuit area. Amplifier T1 is integrated on a semiconductor chip.

[0054] The present invention also discloses a radio frequency power amplifier device, including the input circuit of the high power amplifier described in any of the above claims, for use as a device.

[0055] The present invention also discloses a radio frequency power amplifier system, including the above-mentioned radio frequency power amplifier device, for use as a system.

[0056] It should be understood that the specific embodiments described above are merely illustrative or explanatory of the principles of the invention and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of the invention should be included within the protection scope of the invention. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

Claims

1. An input circuit for a high-power amplifier, wherein the input circuit is disposed between the input terminal and the control terminal of the amplifier, characterized in that, The amplifier is composed of multiple power units, each amplifying and combining the input signal. The input signal is split into multiple paths by the input circuit and reaches each power unit. The input circuit includes an impedance matching network, a phase balancing network, and a harmonic phase tuning network connected in sequence. The impedance matching network is connected to the input terminal, and the harmonic phase tuning network is connected to the amplifier's control terminal. The impedance matching network is used for impedance matching, the phase balancing network is used to equalize the combined phase of the multi-path signals, and the harmonic phase tuning network is used to adjust the phase and amplitude of the second harmonic impedance at the high-frequency end. The impedance matching network, phase balancing network, and harmonic phase tuning network work together... The fundamental impedance is matched; the phase balancing network includes an impedance-gradient transmission line, the transmission line having a first end face and a second end face, the diameter of which gradually increases from the first end face to the second end face; the first end face of the transmission line is connected to the other end of the first inductor of the impedance matching network; the second end face of the transmission line is connected to one end of a second capacitor, the other end of the second capacitor is grounded; one end of the second capacitor is also connected to one end of a third capacitor through a second inductor, the other end of the third capacitor is grounded; one end of the third capacitor is also connected to the input terminal of the harmonic phase tuning network; the second inductor includes at least two sets of sub-second inductors, the sub-second inductors being spatially arranged. The harmonic phase tuning network includes a fourth capacitor connected to one end of the third capacitor, and the other end of the fourth capacitor is connected to the control terminal of the amplifier through a third inductor; the third inductor includes multiple sets of sub-third inductors, and the number of sub-third inductors is equal to the number of sub-power units of the amplifier.

2. The input circuit of the high-power amplifier according to claim 1, characterized in that, The impedance matching network includes a first capacitor connected to the input terminal, the other end of the first capacitor being grounded, and a first inductor connected to the input terminal, the other end of the first inductor being connected to the input terminal of the phase balance network.

3. The input circuit of the high-power amplifier according to claim 1, characterized in that, A grounding module is provided between the second capacitor and the third capacitor.

4. The input circuit of the high-power amplifier according to claim 1, characterized in that, The amplifier and the capacitor of the input circuit are integrated on different chips, and the inductor is a bonded wire inductor.

5. A radio frequency power amplifier device, characterized in that, The input circuit of the high-power amplifier as described in any one of claims 1-4 is included.

6. A radio frequency power amplifier system, characterized in that, Includes the radio frequency power amplifier device as described in claim 5.

Images