Method for manufacturing semiconductor structure, semiconductor structure and memory

CN116709765BActive Publication Date: 2026-07-03CHANGXIN MEMORY TECH INC

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: CHANGXIN MEMORY TECH INC
Filing Date: 2022-02-25
Publication Date: 2026-07-03

AI Technical Summary

Technical Problem

In existing 1T1C configuration dynamic random access memory (DRAM) structures, the size of the capacitor structure limits further reduction in DRAM size and three-dimensional stacking of capacitor structures, making it difficult to achieve high storage density.

Method used

A thin film stack structure is formed on a substrate, and first and second trenches are formed therein. Part of the thin film stack structure is etched away to form write transistors and bit lines, replacing the capacitor structure to form a capacitor-free semiconductor structure. Read transistors and bit lines are formed on top of the thin film stack structure, thereby increasing the storage density through multilayer stacking.

Benefits of technology

Increased storage density was achieved through a capacitor-free structure design, which improved the storage density of DRAM, and further enhanced charge storage density through multi-layer stacking.

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Abstract

This disclosure discloses a method for fabricating a semiconductor structure and the semiconductor structure itself. The method includes: providing a substrate and forming a thin-film stacked structure on the substrate; forming a first trench and a second trench in the thin-film stacked structure, wherein a write transistor is formed in the first trench, and the second trench extends along a first direction and is located between two adjacent write transistors in a second direction; etching away a portion of the thin-film stacked structure using the second trench to form a first channel and a second channel, respectively, forming a write word line in the first channel and a write bit line in the second channel; forming a first opening on the upper surface of the thin-film stacked structure and forming a memory node in the first opening; and forming a read transistor, a read bit line, and leads above the thin-film stacked structure to obtain the semiconductor structure. Accordingly, this disclosure enables an increase in storage density through a capacitor-free semiconductor structure.

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