Semi-buried electric connection plug rod device

Abstract

The invention relates to a system provided with a microelectronic device comprising a substrate (100) exposed on a surface of the device, the substrate (100) comprising at least one electrically conductive element (105), and an electrical connection member (130) electrically connected to the element (105) and comprising at least one stem (116) protruding on the surface of the device, characterized in that the connection member (130) comprises an inorganic anchoring portion (131) covering the element (105), and in that the stem (116) comprises a portion (1161) embedded in the anchoring portion (131) and a portion (1162) protruding on the surface of the device.

Description

Technical Field

[0001] This invention relates to the field of assembling electronic devices, and more specifically, to the field of microelectronics, whereby such assembly enables electrical and mechanical connections of the electrical components of a component. This invention has advantageous, but not limiting, applications in the manufacture of microelectronic devices. The term "microelectronic device" refers to any type of device manufactured using microelectronic means. Besides devices for purely electronic purposes, these devices particularly include micromechanical or electromechanical systems and optical or optoelectronic devices (matrix screens, laser chips, etc.). These can be LED microscopes, sensors in the visible or infrared range.

[0002] From a manufacturing perspective, the present invention relates particularly to forming an interconnect between two microelectronic devices via an insertion technique. It is advantageously compatible with components having a small insertion step size (especially less than 5 micrometers).

[0003] It achieves interconnectivity by assembling components in the final system; for example, these components could be silicon-based readout circuits and detection or display circuits. This assembly enables both mechanical and electrical connections. Background Technology

[0004] Microelectronic systems are becoming increasingly complex, involving more and more electrical interconnections between components. It is well known that components are transferred to other components and a certain connection density is achieved through solder bumps, which act as connectors for both mechanical connections and electrical continuity. Essentially, this technology involves thermal cycling at temperatures typically above 200°C, which is disadvantageous for the technology selection process and may even be incompatible with some components.

[0005] Several techniques are known that involve forming conductive inserts, typically in the form of studs, on one of the devices to be assembled, due to their elongated nature. The other device to be assembled includes conductive terminals. The material of the terminals is chosen to be more malleable than that of the inserts. During assembly, at least one stud is placed opposite the terminal, and mechanical pressure is applied to insert a rod into the terminal. The advantage of this method is that it can be implemented at ambient temperatures, as with microtubule-type inserts. For example, the terminals can be based on aluminum and copper alloys, while the inserts are based on, for example, tungsten. This hybridization technique requires a certain insertion force, which has now reached its limit, especially for hybridization of large substrates. Furthermore, it is difficult to reduce the step size of the connecting elements, which is detrimental to the density achieved by this technique.

[0006] As can be seen from patent publication FR 2866753 A1, there are assemblies using such rods that engage with conductive terminals, with the rods placed in contact with the conductive terminals. These rods are suspended on one surface of the device they are equipped with. It has proven difficult to manufacture such rods. As a result, they are not mechanically optimized, and therefore, implementing this interconnection technology through insert terminals is not satisfactory.

[0007] Therefore, one object of the present invention is to provide an improved technique for forming rod-shaped connecting elements.

[0008] Other objects, features, and advantages of the invention will become apparent upon study of the following description and drawings. It will be understood that other advantages may also be incorporated herein. Summary of the Invention

[0009] To achieve this objective, according to an embodiment, a microelectronic device is provided, including a substrate exposed on the surface of the device, the substrate including at least one conductive element and an electrical connection member electrically connected to the element and including at least one rod protruding from the surface of the device.

[0010] Advantageously, this device makes the connecting member include an inorganic anchoring portion of the covering element, and the rod includes a portion embedded in the anchoring portion, with the subsequent portion protruding from the surface of the device.

[0011] Therefore, the rod is anchored in the dielectric layer, which ensures greater mechanical resistance than inserts known to date, such as microtubes. Although there is a general bias that tends to assume that connecting parts must be additional elements that protrude strictly from the surface of the device, in this case, a technical solution based on the buried portion of the connecting part is proposed, and thus in the form of a rod.

[0012] On the other hand, it relates to a system having the apparatus as described above and a complementary microelectronic device, the microelectronic device including at least one conductive complementary element and a terminal electrically connected to the complementary element and exposed on the surface of the complementary device, with at least one rod inserted into the terminal.

[0013] On the other hand, a method for manufacturing a microelectronic device is disclosed, the method comprising a substrate exposed on a surface of the device, the substrate including at least one conductive element, and an electrically connected member electrically connected to the element and including at least one rod protruding from the surface of the device, characterized in that it comprises:

[0014] --Provide or manufacture a cover element including an inorganic anchoring portion and a substrate including a through hole having a first end and a second end opposite to the first end, the through hole passing through the anchoring portion such that the second end is flush with the surface of the anchoring portion.

[0015] --Only a portion of the anchoring part is removed, configured to remove only some thickness of the anchoring part, leaving the remaining portion of the anchoring part. Therefore, a through hole forms a rod, wherein the partially removed through hole forms a protrusion relative to the remaining anchoring part, and the partially retained through hole forms a buried portion in the remaining anchoring part.

[0016] On the other hand, a method relates to a manufacturing system comprising a microelectronic device and a complementary microelectronic device. The two devices are electrically connected. At least one rod of the microelectronic device is inserted into a terminal of the complementary microelectronic device.

[0017] According to the example, the rod is formed with at least one first segment and one second segment, which are connected to each other in the height dimension, and the first segment has a larger lateral cross-section in the height dimension than the second segment.

[0018] According to the example, the removal includes etching of the anchoring portion.

[0019] Therefore, a rod can be easily formed, which will serve as an insert during the assembly of two devices. Technically, the formation of the rod can be fully controlled by employing a method of developing through-holes through the substrate. In this case, the intent of these manufacturing methods, which typically involve only extending conductive portions into the thickness of the substrate, is diverted to form an insert with a portion protruding and exposed on the surface of the device, which can even become the main part of the height of the rod thus manufactured. Attached Figure Description

[0020] The objects, objectives, features, and advantages of the present invention will be best apparent from the detailed description of the embodiments that follow, illustrated in the following figures, wherein:

[0021] Figure 1 This illustrates an example of a substrate configuration upon which the connecting rod can be manufactured.

[0022] Figures 2 to 14 This indicates the advantageous sequential steps in forming the rod.

[0023] Figure 15A and Figure 15B A variant implementation example is given.

[0024] Figures 16 to 26 An example of advantageous sequential steps for manufacturing a rod according to another embodiment is provided.

[0025] Figures 27A to 27C Three indicative rod section shape options are shown.

[0026] Figures 28 to 33 An example of advantageous sequential steps for manufacturing a rod according to another embodiment is provided.

[0027] Figures 34 to 36 Another variant embodiment is given.

[0028] Figures 37 to 43 An example of advantageous sequential steps for manufacturing a rod according to another embodiment is provided.

[0029] The accompanying drawings are given by way of example and are not intended to limit the invention. They constitute schematic diagrams intended to facilitate understanding of the invention and do not necessarily conform to actual application proportions. In particular, these thicknesses do not represent actual conditions. Detailed Implementation

[0030] Before describing the embodiments of the present invention in detail, optional features are described below, which may be used in combination or alternately.

[0031] --The buried portion 1161 shall occupy at least 5% of the height of pole 116, and optionally at least 10%. Alternatively or supplemented, the buried portion may be expressed as at least 50 nanometers.

[0032] --The buried portion 1161 occupies a maximum of 20% of the height of pole 116.

[0033] --The anchoring portion 113 completely covers the upper surface of the component 105. In this way, the conductive component to be connected is encased in the substrate.

[0034] -- Rod 116 includes a first end that contacts element 105.

[0035] -- Rod 116 is conductive. It can ensure the electrical connection of element 105, either by itself or not.

[0036] --The anchoring portion 131 is electrically insulating. It can function as an insulating element 105 by forming a dielectric coating over element 105. The layer beneath element 105, whether or not it is made of the same material, is also dielectric, which can advantageously achieve this insulation.

[0037] --The anchoring part 131 is made of silicon dioxide. This makes it an easy-to-manufacture option.

[0038] --Anchoring portion 131 is conductive. Points of interest may have a larger contact surface with the component.

[0039] -- The rod 116 is electrically insulated, and the connecting member 130 includes a conductive coating 132 that contacts the anchor portion and the protruding portion of the rod.

[0040] --Coating 132 completely covers the protruding parts.

[0041] --The height dimension of rod 116 is greater than 1 micrometer and / or less than 3 micrometers.

[0042] --The rod 116 includes at least one first segment 1163 and one second segment 1164, which are connected to each other along their height dimension. The first segment 1163, optionally extending from the element, has a transverse cross-section that is larger in the height dimension than the transverse cross-section of the second segment 1164. The shape of the transverse cross-section of the first segment may differ from the shape of the transverse cross-section of the second segment. These two cross-sections are not necessarily centered along the height dimension of the rod.

[0043] --The buried portion 1161 is entirely included in the first section 1163.

[0044] --The transverse cross section of rod 116 is selected from the following shapes: circular, annular, polygonal, and cross-shaped.

[0045] -- The rod 116 is formed with at least one first segment 1163 and a second segment 1164, which are connected to each other along the height dimension. The first segment 1163 has a larger lateral cross section in the height dimension than the second segment 1164.

[0046] --The removal described above includes etching of the anchoring portion, and preferably, the removal described above includes etching of the dielectric portion 102.

[0047] It should be noted that, within the scope of this invention, the terms "on" or "above" do not necessarily mean "contact". Thus, for example, depositing a layer on top of another layer does not necessarily mean that the two layers are in direct contact with each other, but rather that one layer at least partially covers the other layer, either in direct contact with it or separated from it by a film, another layer, or another element.

[0048] Furthermore, a layer can consist of several sublayers made of the same material or different materials.

[0049] An element "based on" material A is an element composed solely of material A or of material A and optionally other materials. For example, an element includes material A and a sleeve configured to contain element A, the sleeve being capable of being formed of at least one material different from material A.

[0050] Materials that are not carbon-based are considered inorganic. This includes metals (such as aluminum), oxides and metal alloys, as well as semiconducting or semiconductor-based materials such as silicon, silicon nitride, or silicon dioxide. Carbon-chain polymer materials are not included in this category.

[0051] The parameter "basically equal to / greater than / less than" means that the parameter is equal to / greater than / less than the given value, plus or minus 10% of the value, or even plus or minus 5% of the value.

[0052] In the detailed description below, terms such as "longitudinal" and "lateral" may be used. These terms must be interpreted relative to the thickness dimension of the substrate or device. Therefore, the height or thickness of an element or layer refers to the dimension along the thickness of the substrate that carries or contains it. Width or cross-section or lateral dimension refers to the dimension perpendicular to the thickness of the substrate.

[0053] Certain components of the device of the present invention may have electrical functions. Some components are used for conductive properties, by means of conductivity or similar properties, which in application means an element formed of at least one material having sufficient conductivity to achieve the intended function. Conversely, other parts are used for electrical insulation properties, and any material with sufficient resistivity to achieve such insulation can be considered, especially so-called dielectric or electrical insulating materials.

[0054] One aspect of the invention is to electrically connect one or more conductive elements of a first device to at least one conductive element (referred to as complementary) of another device (assembled together with the first device). The term "conductive element" refers to any part of a microelectronic device that has at least an electrical function. Preferably, the element is the last interconnecting metal layer of the electronic components. Advantageously, the element has a planar geometry perpendicular to the width dimension of the substrate. This can be a conductive pattern implemented in the microelectronic device, an end with a through-hole, a power distribution line buried in the device, or a connector associated with more complex components (e.g., optical functions that emit or receive light) or electronic devices such as transistors, sensors, chips, integrated circuits, electromechanical or optoelectronic components.

[0055] Below, examples of embodiments of the invention and steps of the manufacturing method are described. Generally, the aim is to form a microelectronic device 1 comprising an electrical connection member 130 including a conductive element 105, the connection member 130 itself including at least one connecting rod comprising a portion embedded in an anchoring portion 131 and a portion protruding from the surface of the device. The protruding portion is intended at least to serve as an insertion protrusion for a complementary connection member, typically in the form of a terminal 230, which is more easily plastically deformable than the rod 116, and which advantageously possesses ductility. Figure 36 and Figure 43 Two examples are shown so as to connect conductive element 105 and complementary conductive element 205 of complementary microelectronic device 2.

[0056] Preferably, the buried portion of the rod 116 contacts the anchoring portion along the entire height dimension of the buried portion; the technical advantage is that there is an anchoring profile along the entire usable height up to the top of the anchoring portion.

[0057] In some embodiments, the rods 116 serve to conduct electricity by connecting the element 105 to the outside. In this case, they will be made of a conductive material. In other embodiments, the invention achieves electrical connection in other ways, particularly by using an anchoring portion 131 made of a conductive material and a coating 132 that covers at least a portion of the surface of the protruding portion of the rod and contacts the anchoring portion 131.

[0058] According to one option, the anchoring portion 131 is formed of a single material, preferably deposited as a single layer.

[0059] For example, in Figure 14 The first option of the embodiment of the connecting member 130 can be seen, corresponding to the embodiment in which the rod 116 achieves or at least facilitates the electrical connection of the element 105. In this case, it represents a device based on substrate 100, which includes, for example, a base layer 101 (which may be made of silicon) located within a dielectric layer 125, and one or more elements 105 having electrical functions. For example, the dielectric layer may be based on or made of silicon dioxide. Of course, other materials may also be used as electrical insulators, such as oxides or other semiconducting materials, such as germanium, or nitrides of silicon nitride or other semiconducting materials, such as germanium. Non-semiconducting materials, such as metal oxides, such as Al2O3, may also be used. Generally, as described above, the layer may have several sublayers. The material of each sublayer may be different.

[0060] The example shown is purely illustrative. It illustrates a three-dimensional structure with components of different hierarchical levels. In this example, two levels are shown, with electrical components 103 of the first level connected to components 105 of the second level via one or more through-holes 104. Examples of the types of components that can be implemented have been given above. In the illustration, these could typically be electrical wiring running through the device.

[0061] Generally, one or more elements 105 should be connected to one or more complementary elements 205 of another device 2. For this purpose, according to the invention, these elements can be presented as embedded within the device, particularly within the dielectric layer 125. Preferably, the element 105 is not exposed at all on the surface of the device, which generally enables effective electrical / magnetic insulation of the element 105. However, for connection to the outside, the device of the invention includes one or more rods 116.

[0062] The term "rod" refers to an elongated element in which its dimension in one direction is greater than its dimension in other directions; this direction, referred to in this case as the height dimension, is oriented along the thickness of the substrate 100. The transverse cross-section of the rods 116 is not limited, but they can be, for example, cylindrical rods, advantageously with a circular cross-section. For example, the overall height of the rod can be greater than 1 micrometer and / or less than 3 micrometers. The shape ratio between the maximum dimension of the transverse cross-section of the rod and the height dimension can be greater than 20%, even greater than 30%, and / or less than 60%, even less than 50%.

[0063] Typically, rod 116 comprises two parts connected to each other in the height direction of rod 116. The first part is called the burial part 1161, in Figure 14 In this case, the anchor portion 131 is located within the dielectric layer 125, which forms an anchoring portion 131 around the rod 116. In this case, the lower end of the rod contacts the upper surface of the element 105 to ensure electrical continuity. The other end of the embedded portion 1161 is located at the surface of the device, starting from the lower end of the protrusion 1162 of the rod 116. This second portion protrudes from the surface of the device to form a protrusion on the latter.

[0064] According to one option, the height of the buried portion 1161 is at least 5% of the total height of the pole 116, or even at least 10% and / or at most 20% of the total height of the pole 116. Alternatively or supplemented, the height of the buried portion 1161 may be at least or greater than 50 nanometers.

[0065] Depending on one option, the total height of the rod is greater than or equal to 500 nanometers, or even 700 nanometers, and is typically greater than or equal to 1 micrometer.

[0066] Each rod 116 is configured to ensure electrical conduction along its height to enable interconnection between element 105 and external complementary elements. For this purpose, rod 116 may include one or more conductive portions. For example, rod 116 may have a metallic pattern, such as tungsten-based or made of tungsten, extending across its entire height.

[0067] The number of rods 116 present in the device is unlimited, and even the number of rods 116 allocated for connecting a given element 105 is unlimited. Therefore, although Figure 14 An example of a rod 116 for component 105 is provided, but Figure 15B As shown, element 105 can be provided with multiple rods 116. This is still illustrative, and a greater number of rods can be implemented. In particular, according to one option of the invention, a matrix of rods 116 is used to connect element 105. This allows for the distribution of electrical and mechanical functions among different rods 116. The step size can be less than 5 micrometers.

[0068] According to the example, for each element, the complementary device 2 to be connected includes at least one terminal 230 capable of engaging with one or more rods 116. Preferably, this engagement is accomplished by inserting the rod 116 into the terminal 230, preferably by plasticizing the material of the terminal during insertion. More specifically, a protrusion 1162 of each rod 116 is pressed against the terminal, causing the portion to insert into the terminal 130. Advantageously, the shape and size of the protrusion are adapted, particularly in terms of shape proportions and height, to facilitate its insertion into the terminal 230.

[0069] Preferably, the shape proportions of the protruding portion of the rod are configured to allow it to be inserted into the terminal 230. According to one option, the shape ratio between the maximum dimension of the transverse cross-section of the protruding portion of the rod and its height dimension can be greater than 20%, even greater than 30%, and / or less than 60%, even less than 50%.

[0070] Advantageously, the height of the protruding portion 1162 is greater than or equal to 300 nanometers, or even 500 nanometers, or even 700 nanometers, or even 1 micrometer.

[0071] Now, let's continue describing the possible steps to achieve... Figure 14 The device shown in the figure.

[0072] Figure 1 The substrate 100 is shown, which can serve as the starting point for building the rod 116.

[0073] The substrate 100 includes a bottom layer 101, a dielectric portion 102 (which can be used to form part of the final dielectric layer 125, with the portion of the dielectric layer surrounding the rod serving as an anchoring portion 131), and elements 103 and 105. In this example, element 103 is connected to the upper element 105 via a through-hole 104. Elements 105 are exposed on the surface of the substrate 100. They can be formed by metal deposition followed by photolithography and etching, thereby defining the pattern forming the elements 105. For example, the deposited metal can be an alloy including titanium, aluminum, copper, etc.

[0074] exist Figure 2 In this process, for example, silicon dioxide (SiH4) has been deposited to increase the height of the dielectric portion. This deposition can be performed using a high-density plasma chemical vapor deposition (HDP CVD) method, which uses SiH4 as a precursor. For example, a filling height of approximately 1 micrometer can be achieved.

[0075] Then, removal is performed by polishing, for example, using the surface of element 105 as a stop layer for chemical and mechanical polishing, thereby obtaining a flat surface, with Figure 3 This corresponds to the situation.

[0076] Based on this optimized surface condition, another deposition 107 of dielectric material is performed, which enables the embedding of element 105, such as... Figure 4 As shown. For example, this could be silicon dioxide deposited by tetraethoxysilane (called TEOS) via plasma-enhanced chemical vapor deposition (PECVD). Here, a thickness of approximately 1 micrometer can also be achieved. Typically, a deposition thickness corresponding to the desired rod height can be achieved.

[0077] Based on this, holes will be created to form through holes, which themselves will become rod 116.

[0078] therefore, Figure 5 The formation of mask 108 is shown, which can be implemented using conventional photolithography techniques. The mask includes a pattern that allows it to define exposed areas of dielectric portions within a cavity, such as... Figure 6 As shown, a hole 109 (on the right side of element 105, to equip a rod) is typically formed in this area by etching the material deposited 107 (typically by plasma etching). The material on the surface of element 105 serves as a stop layer for this etching. The mask is then removed to obtain... Figure 7 The result.

[0079] Strictly speaking, the formation of vias begins here. This can be initiated by the deposition of layer 110, which can serve as the underlayer for the via. This layer can be used as an adhesion layer (e.g., made of Ti) and / or as a diffusion barrier layer (e.g., made of TiN). This can be achieved through physical vapor deposition (PVD).

[0080] Then, more padding is performed in one or more loops to optimize the padding. This situation occurs in... Figure 9 The deposition is manifested as layer 111, for example, through one or more chemical vapor deposition processes, and then, in Figure 10 In the middle, polishing is performed, and then as follows Figure 11 As shown in the example, a second deposition 113 is performed, for example always by chemical vapor deposition, to fill any possible voids 112, which have already begun during the first filling. For at least one deposition, preferably for the first deposition, the filling can be accomplished with a tungsten-based material. Alternatively, the second deposition can be achieved with TiTiN.

[0081] exist Figure 12 In the middle, the final deposition 114 has been performed, for example by CVD, using tungsten. Optionally, it fills the remaining pores.

[0082] After polishing, stop at the top of through hole 115 to obtain... Figure 13As shown, at this level, one end 1152 of the via is exposed to the surface of the substrate 100 used to form the device. The remainder of this surface is advantageously defined by a dielectric layer from the dielectric portion 102. The other end of the via (reference numeral 1151) is connected to the element 105.

[0083] Then, by removing the surface portion of the dielectric portion 102, the desired result is obtained. Figure 14 The described configuration. This can be a full-plate etching (gravure pleine plaque). This etching is selective in this sense, removing the dielectric material while retaining the material of the vias, thus forming rod 116. The thickness of the dielectric material can be controlled during the etching time. Plasma etching utilizing TEOS can be used.

[0084] For example, it can be arranged to etch 80% of the thickness of the dielectric material of the cover element 105 so as to retain 20% of the height for burying portion 1161 of the rod 116.

[0085] In order to achieve Figure 15B In the embodiment shown, it is only necessary to form a plurality of holes 109 on the right side of a given element 105 and perform the step of defining through holes corresponding to the plurality of holes.

[0086] Figure 26 Another example of a rod configuration is given below. Preferably, in this case, the electrical connection member 130 always includes at least one conductive rod 116. As mentioned above, the anchoring portion 130 can be electrically insulated. This in particular makes it possible to use a layer that completely covers the surface of the device to form the anchoring portion 130 there. However, as will be seen below, this arrangement is by no means limiting.

[0087] As described above, based on the substrate 100, including the element 105 to be connected, a plurality of rods 116 have been formed, each including a buried portion 1161 located in the dielectric layer 125 and a protruding portion 1162 forming a protrusion above the dielectric layer 125.

[0088] However, in this case, the rod 116 includes a cross-sectional variation along its height, a first segment 1163, followed by a second segment 1164 with a smaller cross-section. Preferably, these segments are connected to each other in the height direction of the rod, centered on the longitudinal direction of the rod. These segments may have the same or different transverse cross-sections. The rod thus formed includes a wider base, providing greater mechanical resistance, and all parts of the rod except the buried portion are located in the first segment. Anchoring of each rod in the anchoring portion 131 in the dielectric layer 125 would be better. As an alternative or complementary advantage, the height of the rod can be greater due to the larger transverse dimension of the base portion (i.e., the first segment).

[0089] For example, a segment 1163 with a height of approximately 1 micrometer can be formed; as mentioned above, this segment can be circular, and therefore, its diameter is, for example, approximately 1 micrometer.

[0090] For the second segment 1164, for example, it may have a transverse cross section that is 50% narrower than that of the first segment 1163. Its height may be substantially the same.

[0091] For example, this can be used to form rods 116 with a height of approximately 1.5 to 2 micrometers.

[0092] To achieve this result, from Figures 16 to 26 The steps of this method are described. Figure 16 This corresponds to the result obtained in the previous example, that is... Figure 13 In this case, for this example, the formed via portion, resulting in the first segment 1163, is wider than before. Based on this, instead of removing a portion of the via to expose it on the surface of the dielectric layer as described in the previous example, a second via portion, corresponding to the second segment 1164, is formed.

[0093] therefore, Figure 17 Another deposition 117 of dielectric material is shown to cover the first segment 1163, the height of which corresponds to the height of the second segment to be formed. The above deposition technique may be suitable.

[0094] from Figure 18 To begin, the following steps may be in a different order than those in the reference. Figures 5 to 13 The given sequence of steps is very similar. In fact, the layer from deposition 117 can be used to define the aperture through mask 118, etch the aperture 119 (the upper end of the first segment 1163 can be used as a stop layer for this etching), and then there are successive depositions 120, 121, 123, 124, which can be similar to depositions 110, 111, 113, 114, respectively.

[0095] As described above, a portion of the via is exposed on layer 125, and preferably, the dielectric material is removed from the surface of layer 102 by etching.

[0096] According to one option, through-holes are defined in the substrate from the first processing station. These are then provided to another station for partial removal to define the buried and exposed portions of the rod, and then, preferably at the same station, assembly with another complementary device is ensured. Of course, this series of steps can also be performed at the same station.

[0097] Figures 27A to 27C Three indicative diagrams are provided showing the transverse sections that can be used for rod 116. Figure 27A In this case, the shape of the hole produces a rod 116 with a solid circular cross-section; Figure 27BAnother example with an annular cross-section is given, the center of which may be empty, thus forming a microtube or filled with another material, such as one that is less conductive but more rigid than the material of rod 116 itself. Figure 27C The third indicative case is shown, which is a cross shape. These arrangements are not restrictive, and polygonal, such as square, or any other shaped cross section can be used.

[0098] and Figures 28 to 33 The corresponding embodiment is similar to the previous embodiment. Starting with a substrate 100, one or more conductive elements 105 are supported. As described above, the element 105 is coated with a layer, in this case, for example, a dielectric layer 125. However, it can be seen that this can be a conductive layer. This layer can be formed with a height of 1 to 4 micrometers above the upper surface of the element 105. In general, holes 109 can be formed in layer 125 according to the steps described above, and then through-holes 115 can be formed, aiming to form… Figure 32 Rod 116 is shown in the figure. Furthermore, the configuration obtained in this figure basically corresponds to... Figure 15B For example, except for element 103 which does not include the underlying conductive layer, these elements can always be present or absent. On the other hand, as... Figure 30 and Figure 31 As shown, in this case, a two-part structure (or even a structure with more than two parts) of the through-hole is advantageous to achieve greater height, with its shape proportions favorable to the height. (Compared to...) Figure 26 In contrast to the example obtained in the previous example, in this purely indicative example, the continuity of the different through-hole sections is achieved without any change in the transverse cross-section.

[0099] The difference is, Figure 33 A defining pattern is shown in layer 125 to laterally define the anchoring portion 131 of the connecting member 130 surrounding the rod 116. Preferably, this definition preserves the complete coating of element 105, even if it is completely buried (i.e., its surface is not exposed at all on the surface of the device). As described above, this configuration further enables the use of a conductive material on the anchoring portion 131 to ensure electrical insulation of the anchoring portion 131 relative to other parts of the device surface.

[0100] The lateral definition of the anchoring portion 131 can be achieved by etching to form a cut.

[0101] Figures 35 to 36Another variation is shown: a conductive coating 132 is formed above the rod 116 and above the exposed surface of the layer forming the anchor portion 131. In this case, for this example, the layer is in the form of a conductive layer 126. The coating 132 is arranged such that it forms a conductive portion continuous with the underlying anchor portion 131; furthermore, this conductive portion is shaped to surround the protrusion of the rod 116 so as to benefit from electrical conduction with the terminal 230 when the complementary microelectronic device 2 is connected.

[0102] As mentioned above, such as Figure 35 As shown, the anchoring portion 131 can be cut to provide electrical insulation for each electrical connection member 130.

[0103] Through this scheme, Figure 36 The electrical connection scheme between devices 1 and 2 is shown. Terminal 230 is electrically connected to complementary conductive element 205 in this way, thus performing a hybridization.

[0104] Figures 37 to 43 Another embodiment is shown, which in particular illustrates that the rod 116 does not necessarily have to contact the element 105.

[0105] In particular, in this case, the shape of the male end of the rod (also known as a “micro-insertion,” “micro-tip,” or “stud”) is at least mechanically designed for assembly with the terminal 230, even though one or more rods 116 are not necessarily conductive in this configuration.

[0106] The components 105 of the substrate 100 are first disposed as follows Figure 37 The conductive layer 126 covers it. Figure 38 As described above, holes are formed in this layer to create through-holes. These holes may be formed to extend through the entire thickness of layer 126, or they may not. As described above, these holes and associated through-hole portions may be formed continuously to increase the height of the final rod 116, and thus also increase the shape proportions. In this case, the position of the rod 116 is configured not to contact, or at least not to completely cover, element 105. The latter remains covered by the conductive layer 126.

[0107] Therefore, in Figure 40 In this configuration, element 105 is surrounded by two rods 116, which, as described above, have portions embedded in a layer (in this case, a conductive layer 126).

[0108] Conductive coating 132 is also beneficial, as it is deposited on... Figure 41 As explained in the text, the protruding part of the conductive cover rod is connected to layer 126.

[0109] The following steps and Figure 35Similarly, the connecting members 130 present on the surface of the device are separate to insulate them from each other. In this case, electrical continuity is only achieved through the conductive material of the anchoring portion 131 to the top of the protruding portion of the rod 116. Optionally, the rod 116 can be formed to surround the assembly. At least one pair of rods, or even multiple rods, can be used, for example, arranged in a circle to surround the element 105.

[0110] Generally, the number of links is not limited; all the examples given above can use at least one link, optionally two links, or even more than two links for the connection member 130 under consideration. The number of connection members 130 available on the surface of the microelectronic device is also not limited. Optionally, several members 130 can achieve the connection of the same element 105, even if, preferably, they are used to electrically connect different elements 105.

[0111] Unless otherwise expressly stated in this specification, each feature of the above embodiments can be implemented by analogy in other embodiments. For example, a rod 116 having several sections can be formed in all cases, and different transverse cross-sectional shapes of the rod 116 are also proposed. Similarly, different variations of conductive or insulating properties have been proposed for the rod and anchoring portions, and all combinations of these electrical properties can be achieved whenever possible.

[0112] Furthermore, several materials, preferably materials having the same electrical (conductive or dielectric) properties, can be used to form portions of the connecting member 130. For example, the anchoring portion 131 may comprise a stack of layers of different materials, such as a semiconductor oxide followed by a semiconductor nitride, or vice versa.

[0113] Provided that their configuration relative to the anchoring portion enables electrical continuity from the surface of element 105 to protrusion 1162. Alternatively, or in combination with this, the anchoring portions may include sublayers with different electrical properties in the stack, provided that their configuration relative to the rod always enables such electrical continuity.

[0114] The present invention is not limited to the embodiments described above.

Claims

1. A system including a microelectronic device, comprising: The microelectronic device includes a substrate (100) exposed on the surface of the device, the substrate (100) including at least one conductive element (105), and an electrical connection member (130) electrically connected to the conductive element (105) and including at least one rod (116) protruding from the surface of the device. A complementary microelectronic device (2) includes at least one complementary conductive element (205) and a terminal (230) electrically connected to the complementary conductive element (205) and exposed on the surface of the complementary microelectronic device (2). The system is characterized in that the electrical connection member (130) includes an inorganic anchoring portion (131) covering the conductive element (105), and the rod (116) includes an embedded portion (1161) embedded in the anchoring portion (131) and a protruding portion (1162) protruding from the surface of the device, wherein at least one protruding portion (1162) of the rod (116) is inserted into the terminal (230). The length of the protruding portion (1162) of the rod (116) is greater than the length of the buried portion (1161).

2. The system according to claim 1, wherein, The buried portion (1161) occupies at least 5% of the height dimension of the rod (116).

3. The system according to claim 1, wherein, The buried portion (1161) occupies a maximum of 20% of the height dimension of the rod (116).

4. The system according to claim 1, wherein, The height dimension of the rod (116) is greater than 1 micrometer and / or less than 3 micrometers.

5. The system according to claim 1, wherein, The shape ratio between the maximum dimension of the rod (116) in its transverse section and its height dimension is greater than 20%.

6. The system according to claim 1, wherein, The protruding portion (1162) of the rod (116) is greater than 300 nanometers.

7. The system according to claim 1, wherein, The anchoring portion (131) completely covers the upper surface of the conductive element (105).

8. The system according to claim 1, wherein, The rod (116) includes a first end that contacts the conductive element (105).

9. The system according to claim 8, wherein, The rod (116) is conductive.

10. The system according to claim 9, wherein, The anchoring portion (131) is electrically insulated.

11. The system according to claim 10, wherein, The anchoring part (131) is made of silicon dioxide.

12. The system according to any one of claims 1 to 9, wherein, The anchoring portion (131) is conductive.

13. The system according to claim 12, wherein, The rod (116) is electrically insulated, and the electrical connection member (130) includes a conductive coating (132) that contacts both the protruding portion of the rod and the anchoring portion.

14. The system according to claim 13, wherein, The conductive coating (132) completely covers the protruding portion.

15. The system according to claim 1, wherein, The rod (116) includes at least one first segment (1163) and a second segment (1164) connected to each other along its height dimension, wherein the transverse cross section of the first segment (1163) relative to the height dimension is larger than the transverse cross section of the second segment (1164).

16. The system according to claim 15, wherein, The buried portion (1161) is formed at least in part by the first section (1163).

17. The system according to claim 1, wherein, The rod (116) has one or two transverse cross sections selected from the following shapes: circular, annular, polygonal, and cross-shaped.

18. A method for manufacturing a system comprising a microelectronic device (1), the microelectronic device comprising a substrate (100) exposed on a surface of the microelectronic device, the substrate (100) comprising at least one conductive element (105), and an electrically connected member (130) electrically connected to the conductive element (105) and comprising at least one rod (116) protruding from the surface of the microelectronic device, the method comprising: The substrate (100) is provided or manufactured, the substrate including a conductive element (105) covered by an inorganic anchoring portion (131), and including a through hole (115) having a first end and a second end opposite to the first end, the through hole (115) passing through the anchoring portion (131) such that the second end is flush with the surface of the anchoring portion (131). The anchoring portion (131) is partially removed, configured to remove only a portion of the thickness of the anchoring portion (131), leaving the remaining portion of the anchoring portion (131), thereby forming the rod (116) through the through hole (115), wherein a portion of the through hole (115) is removed relative to the remaining anchoring portion (131) to form a protrusion (1162), and a portion of the through hole (115) is retained in the remaining anchoring portion (131) to form a buried portion (1161). The microelectronic device is electrically connected to a complementary microelectronic device (2), the complementary microelectronic device including at least one complementary conductive element (205) and a terminal (230), the terminal being electrically connected to the complementary conductive element (205) and exposed on the surface of the complementary microelectronic device (2), and a protrusion (1162) of the at least one rod (116) being inserted into the terminal (230). The length of the protruding portion (1162) of the rod (116) is greater than the length of the buried portion (1161).

19. The method according to claim 18, wherein, The rod (116) is formed with at least one first segment (1163) and a second segment (1164) connected to each other along its height dimension, wherein the transverse cross section of the first segment (1163) relative to the height dimension is larger than the transverse cross section of the second segment (1164).

20. The method according to claim 18, wherein, The removal includes etching of the anchoring portion.

21. The method of claim 18, comprising plasticizing the terminal (230) when the protrusion (1162) of the at least one rod (116) is inserted.

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