A packaging structure

Abstract

This disclosure provides a packaging structure including a substrate, a chip structure, a heat dissipation structure, and a molding compound. The heat dissipation structure includes at least one first thermally conductive structure disposed on the substrate and extending vertically to the top of the molding compound. The heat dissipation structure also includes a second thermally conductive structure connected to the first thermally conductive structure and disposed parallel to the substrate. In this disclosure, the first thermally conductive structure is disposed on the substrate and extends vertically to the top of the molding compound, which facilitates the conduction of heat from the substrate and the chip structure to the outside of the molding compound through the first thermally conductive structure. The second thermally conductive structure is connected to the first thermally conductive structure and disposed parallel to the substrate, so that the heat generated by the chip structure can also be transferred to the outside of the molding compound sequentially through the second thermally conductive structure and the first thermally conductive structure, thereby reducing the temperature of the packaging structure, reducing power consumption, and improving performance.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a packaging structure. Background Technology

[0002] Integrated circuit chips are developing towards miniaturization, high density, high power, and high speed.

[0003] However, high-power operation will cause integrated circuit chips to generate a lot of heat. Miniaturization and high density will lead to poor heat dissipation of integrated circuit chips. If the temperature inside the integrated circuit chip is too high, the performance of the integrated circuit chip will be reduced and the lifespan will be shortened. Summary of the Invention

[0004] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0005] A first aspect of this disclosure provides a packaging structure, including:

[0006] substrate;

[0007] A chip structure is disposed on the substrate;

[0008] A heat dissipation structure is disposed on the substrate;

[0009] A molding compound is disposed on the substrate and covers the chip structure and the heat dissipation structure;

[0010] The heat dissipation structure includes:

[0011] At least one first thermally conductive structure is disposed on the substrate and extends vertically to the top of the molding compound;

[0012] A second thermally conductive structure is disposed on the first thermally conductive structure, the second thermally conductive structure is parallel to the substrate, and the second thermally conductive structure is located within the molding compound.

[0013] In some embodiments, the first thermally conductive structure includes:

[0014] A first heat conductor is disposed on the substrate;

[0015] A second heat conductor is disposed on the first heat conductor and extends to the top of the molding compound;

[0016] Wherein, the size of the first heat conductor is greater than or equal to the size of the second heat conductor.

[0017] In some embodiments, the second heat-conducting structure includes a through-hole, the size of which is greater than or equal to the size of the second heat conductor.

[0018] In some embodiments, the second thermally conductive structure is located on the chip structure, and there is a gap between the via and the chip structure.

[0019] In some embodiments, the through hole is located at the junction of the first thermally conductive structure and the second thermally conductive structure.

[0020] In some embodiments, the first heat-conducting structure includes a plurality of second heat conductors, and the plurality of second heat conductors share the second heat-conducting structure.

[0021] In some embodiments, the first heat conductor is inserted into and / or soldered into the substrate.

[0022] In some embodiments, the size of the second heat-conducting structure is less than or equal to the size of the first heat-conducting body.

[0023] In some embodiments, the chip structure includes:

[0024] A first chip is disposed on the substrate and electrically connected to the substrate via a first lead;

[0025] The second chip is disposed on the first chip and electrically connected to the substrate via a second lead;

[0026] The second heat-conducting structure is located between the first lead and the second lead, or the second heat-conducting structure is located below the first lead or the second lead.

[0027] In some embodiments, the heat dissipation structure includes two first thermal conductive structures that span the chip structure and have a gap between them.

[0028] In the packaging structure provided in this disclosure, a first thermally conductive structure is disposed on the substrate and extends vertically to the top of the molding compound, which facilitates the conduction of heat from the substrate and the chip structure to the outside of the molding compound through the first thermally conductive structure; a second thermally conductive structure is connected to the first thermally conductive structure and disposed parallel to the substrate, so that the heat generated by the chip structure can also be transferred to the outside of the molding compound in sequence through the second thermally conductive structure and the first thermally conductive structure, thereby reducing the temperature of the packaging structure, reducing power consumption, and improving performance.

[0029] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description

[0030] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.

[0031] Figure 1 This is a schematic diagram illustrating a semiconductor packaging structure according to an exemplary embodiment.

[0032] Figure 2 yes Figure 1 A magnified view of region A in the middle.

[0033] Figure 3 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0034] Figure 4 This is a schematic diagram illustrating a heat dissipation structure according to an exemplary embodiment.

[0035] Figure 5 This is a schematic diagram of a heat dissipation structure according to another exemplary embodiment.

[0036] Figure 6 This is a schematic diagram illustrating a heat dissipation structure according to yet another exemplary embodiment.

[0037] Figure 7 This is a schematic diagram illustrating an initial packaging structure according to an exemplary embodiment.

[0038] Figure 8 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0039] Figure 9 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0040] Figure 10 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0041] Figure 11 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0042] Figure 12 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0043] Figure 13 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0044] Figure 14 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0045] Figure 15 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0046] Figure 16 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0047] Figure 17 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0048] Figure 18 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0049] Figure 19 This is a schematic diagram illustrating an encapsulation structure according to an exemplary embodiment.

[0050] Figure Labels :

[0051] 100. Heat dissipation structure; 100a. Heat dissipation structure one; 100b. Heat dissipation structure two; 100c. Heat dissipation structure three;

[0052] 10. First heat-conducting structure; 10a. First heat conductor; 10b. Second heat conductor; 11. Top; 12. Bottom;

[0053] 20. Second heat-conducting structure; 21. Through hole;

[0054] 30. Flat panel; 31. First area; 32. Second area; 33. Cutting line;

[0055] 200, substrate; 40, mounting hole; 50, mounting slot;

[0056] 300. Chip structure; 60. Bare die; 61. First chip; 62. Second chip; 70. Adhesive film; 80. Bonding wire; 81. First lead; 82. Second lead;

[0057] 400. Molding compound. Detailed Implementation

[0058] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0059] To address the problems existing in related technologies, this disclosure provides a packaging structure including a substrate, a chip structure, a heat dissipation structure, and a molding compound. The heat dissipation structure includes at least one first thermally conductive structure disposed on the substrate and extending vertically to the top of the molding compound. The heat dissipation structure also includes a second thermally conductive structure connected to the first thermally conductive structure and disposed parallel to the substrate. In this disclosure, the first thermally conductive structure is disposed on the substrate and extends vertically to the top of the molding compound, facilitating the conduction of heat from the substrate and chip structure to the outside of the molding compound via the first thermally conductive structure. The second thermally conductive structure is connected to the first thermally conductive structure and disposed parallel to the substrate, allowing heat generated by the chip structure to be transferred to the outside of the molding compound sequentially via the second and first thermally conductive structures, thereby reducing the temperature of the packaging structure, reducing power consumption, and improving performance.

[0060] In exemplary embodiments of this disclosure, such as Figures 1 to 3 As shown, this disclosure provides a packaging structure, such as Dynamic Random Access Memory (DRAM) or Static Random Access Memory (SRAM). The packaging structure can also be a package-on-package (PoP) structure formed by DRAM and a system-on-chip (SoC).

[0061] like Figures 1 to 3 As shown, the packaging structure includes a substrate 200 and a chip structure 300 disposed on the substrate 200. The substrate 200 is a type of circuit board used to carry chips, characterized by high density, high precision, high performance, miniaturization, and thinness. It provides support, heat dissipation, and protection for the chip structure 300, and also provides electrical connections for the chip structure 300.

[0062] refer to Figure 1 and combined Figure 19The encapsulation structure also includes a molding compound 400 disposed on the substrate 200. The molding compound 400 encapsulates the chip structure 300 and can resist solvents, moisture, and physical impacts from the external environment to protect the chip structure 300 from external environmental influences and to electrically insulate the chip structure 300 from the external environment. The molding compound 400 can be packaged and sealed using a molding method, which can include transfer molding, vacuum molding, and compression molding. The material used in molding is typically epoxy molding compound (EMC). EMC's main raw material is resin-based material, with other components including fillers and hardeners. Powdered epoxy resin, after melting, can dissolve into a gel state at 175°C, where its viscosity decreases. As the temperature decreases, the epoxy resin will cure; the lower the temperature, the higher the viscosity. When the temperature drops to a preset threshold, the hardness and viscosity are high, allowing the epoxy resin to firmly bond with surrounding printed circuit boards (PCBs), lead frames, wires, chips, etc. After EMC curing, when the packaged structure is put into use, if the temperature of the packaged structure fluctuates, the EMC can expand and contract along with the internal components of the packaged structure.

[0063] refer to Figure 1 , Figure 2 and Figure 19 The packaging structure provided in this embodiment further includes a heat dissipation structure 100, which is disposed on the substrate 200 and covered by a molding compound 400.

[0064] refer to Figures 4 to 6 The heat dissipation structure 100 includes at least one first heat-conducting structure 10, which is disposed on the substrate 200 and extends vertically to the top of the molding compound 400. It is understood that when the encapsulation structure is in operation, heat will be generated in the substrate 200, forming a high-temperature region. By providing the first heat-conducting structure 10 connected to the substrate 200 and extending to the top of the molding compound 400, the heat in the substrate 200 can be conducted to the outside of the molding compound 400 through the first heat-conducting structure 10. The thermal conductivity of the heat dissipation structure 100 is higher than that of the molding compound 400, thereby improving the cooling efficiency within the encapsulation structure.

[0065] Continue to refer to Figures 4 to 6The heat dissipation structure 100 also includes a second heat-conducting structure 20, which is connected to the first heat-conducting structure 10 and is parallel to the substrate 200. It is understood that the second heat-conducting structure 20, positioned parallel to the substrate 200, is close to the top surface of the chip structure 300, so that the heat generated by the chip structure 300 can be conducted sequentially through the second heat-conducting structure 20 and the first heat-conducting structure 10 to the outside of the molding compound 400, thereby rapidly reducing the temperature of the chip structure 300.

[0066] In one example (not shown in the figure), the heat dissipation structure 100 includes a first heat-conducting structure 10 and a second heat-conducting structure 20, which are arranged in a T-shape.

[0067] In another example, such as Figures 4 to 6 As shown, the heat dissipation structure 100 includes two first heat-conducting structures 10 and one second heat-conducting structure 20, with the two first heat-conducting structures 10 respectively disposed at both ends of the second heat-conducting structure 20. The first heat-conducting structures 10 and the second heat-conducting structure 20 can be connected by welding, snap-fitting, or other methods, or they can be integrally formed. The materials of the first heat-conducting structures 10 and the second heat-conducting structure 20 have good thermal conductivity, including but not limited to copper (Au), silver (Ag), gold (Au), graphene, graphite, carbon fiber, etc.

[0068] Among them, reference Figures 4 to 6 The two first heat-conducting structures 10 and the second heat-conducting structure 20 are arranged in an H-shape, with an angle of about 90° between the first heat-conducting structure 10 and the second heat-conducting structure 20. The angle can have an allowable error range of ±5°.

[0069] In this embodiment, a first thermally conductive structure 10 is disposed on the substrate 200 and extends vertically to the top of the molding compound 400, which facilitates the conduction of heat from the substrate 200 and the chip structure 300 to the outside of the molding compound 400 via the first thermally conductive structure 10. A second thermally conductive structure 20 is connected to the first thermally conductive structure 10 and disposed parallel to the substrate 200, so that the heat generated by the chip structure 300 can also be transferred to the outside of the molding compound 400 via the second thermally conductive structure 20 and the first thermally conductive structure 10 in sequence, thereby reducing the temperature of the packaging structure, reducing power consumption, and improving performance.

[0070] In one exemplary embodiment, such as Figures 1 to 3As shown, the packaging structure includes a substrate 200, a chip structure 300, a heat dissipation structure 100, and a molding compound 400. The heat dissipation structure 100 includes at least one first heat-conducting structure 10, which is disposed on the substrate 200 and extends vertically to the top of the molding compound 400. The heat dissipation structure 100 also includes a second heat-conducting structure 20, which is connected to the first heat-conducting structure 10 and is disposed parallel to the substrate 200.

[0071] In this embodiment of the disclosure, such as Figures 4 to 6 As shown, the first heat-conducting structure 10 of the heat dissipation structure 100 includes a first heat conductor 10a and a second heat conductor 10b connected to the first heat conductor 10a. In the assembled state, the first heat conductor 10a is connected to the substrate 200, and the second heat conductor 10b is connected to the end of the first heat conductor 10a away from the substrate 200. The end of the second heat conductor 10b away from the first heat conductor 10a can extend to the top of the molding compound 400.

[0072] The size of the first heat conductor 10a is greater than or equal to the size of the second heat conductor 10b. (Reference) Figure 5 The dimensions of the first heat conductor 10a ( Figure 1 The size of the first heat conductor 10a (in the x direction shown) is greater than or equal to that of the second heat conductor 10b, which allows the first heat conductor 10a to have a larger facing area with the substrate 200 and the chip structure 300, thereby improving the heat conduction efficiency.

[0073] refer to Figure 5 and Figure 6 The second heat-conducting structure 20 is plate-shaped, and a through hole 21 with a size greater than or equal to that of the second heat conductor 10b is provided on the second heat-conducting structure 20. By providing the through hole 21 at the connection position of the plate-shaped first heat-conducting structure 10 and the second heat-conducting structure 20, for example, when packaging and sealing the encapsulation structure to form the molding compound 400, the gel-state EMC used to form the molding compound 400 can flow through the through hole 21 to the bottom of the heat dissipation structure 100, so as to completely fill the internal space of the encapsulation structure and avoid the heat dissipation structure 100 from affecting the structure of the molding compound 400.

[0074] In an optional embodiment, when the second thermally conductive structure 20 is configured to be attached to the top of the chip structure 300 to improve thermal conductivity, the through-hole 21 of the second thermally conductive structure 20 can be configured to have a gap with the chip structure 300. That is, the projection of the through-hole 21 on the substrate 200 and the projection of the chip structure 300 on the substrate 200 do not overlap at least partially, so that EMC can reach the underside of the second thermally conductive structure 20 through the through-hole 21, thereby improving the side coverage of the molding compound 400 on the chip structure 300 and improving the protective effect of the molding compound 400 on the chip structure 300.

[0075] The through hole 21 on the second heat-conducting structure 20 can be disposed at the junction of the first heat-conducting structure 10 and the second heat-conducting structure 20, so the manufacturing method of the heat dissipation structure 100 may include the following steps:

[0076] First, a flat plate 30 is provided, comprising a first region 31 and two second regions 32 disposed on either side of the first region 31. A cutting line 33 is provided at the connection point between the first region 31 and the second region 32. Each cutting line 33 may be U-shaped, with the opening of the U-shaped cutting line 33 facing the second region 32. Then, the second region 32 of the flat plate 30 can be folded relative to the first region 31, with the folding direction referring to... Figure 5 and Figure 6 In the directions a and b shown, the folding angle is, for example, 85° to 95°. During the folding process, the structure enclosed by the U-shaped cutting line 33 will fold along with the second region 32. It can be determined that after the folding is completed, the structure enclosed by the U-shaped cutting line 33 will be located above the first region 31. Figure 5 (as shown in the z direction), the second region 32 is located below the first region 31. That is to say, the first region 31 constitutes the second heat-conducting structure 20, and the structure surrounded by the U-shaped cutting line 33 constitutes the second heat conductor 10b (detailed in the following text). The second region 32 constitutes the first heat conductor 10a (detailed in the following text). The first heat conductor 10a and the second heat conductor 10b constitute the first heat-conducting structure 10.

[0077] As can be seen from the above, by setting through holes 21 on the second heat-conducting structure 20, an integrally formed flat plate 30 can be made. The flat plate 30 is then folded to obtain an H-shaped heat dissipation structure 100100, which simplifies the manufacturing process of the heat dissipation structure 100100, reduces the difficulty of the process, and the integral forming process has high production efficiency and high yield.

[0078] In one exemplary embodiment, such as Figures 1 to 3 As shown, the packaging structure includes a substrate 200, a chip structure 300, a heat dissipation structure 100, and a molding compound 400. The heat dissipation structure 100 includes at least one first heat-conducting structure 10, which is disposed on the substrate 200 and extends vertically to the top of the molding compound 400. The heat dissipation structure 100 also includes a second heat-conducting structure 20, which is connected to the first heat-conducting structure 10 and is disposed parallel to the substrate 200.

[0079] The first heat-conducting structure 10 includes a first heat conductor 10a and a second heat conductor 10b.

[0080] refer to Figures 4 to 6The first heat-conducting structure 10 includes a plurality of second heat-conducting elements 10b, which are connected to the same second heat-conducting structure 20, that is, the plurality of second heat-conducting elements 10b share the second heat-conducting structure 20. By increasing the number of second heat-conducting elements 10b, the heat dissipation structure 100 can have a larger contact area with the external environment, which is beneficial to improving the heat exchange efficiency between the heat dissipation structure 100 and the external environment.

[0081] refer to Figure 1 and Figure 3 The first heat conductor 10a of the first heat-conducting structure 10 can be connected to the substrate 200 by insertion or welding.

[0082] In one example, reference Figure 1 and Figure 3 The top surface of the substrate 200 is provided with mounting holes 40, which can be, for example, blind holes, and the blind holes are along the thickness direction of the substrate 200. Figure 3 The heat dissipation structure 100 is recessed into the substrate 200 in the z direction shown in the figure. When the first heat conductor 10a is columnar, the bottom of the first heat conductor 10a can extend into the blind hole. The heat dissipation structure 100 is connected to the substrate 200 by insertion.

[0083] In another example, refer to Figure 1 and Figure 3 A mounting groove 50 is provided on the top surface of the substrate 200, and the mounting groove 50 is along the thickness direction of the substrate 200. Figure 3 The heat dissipation structure 100 is recessed into the substrate 200 in the z direction shown in the figure. When the first heat conductor 10a is plate-shaped, the bottom of the first heat conductor 10a can extend into the mounting groove 50. The heat dissipation structure 100 is connected to the substrate 200 by insertion.

[0084] In yet another example, refer to Figure 1 and Figure 3 The bottom of the first heat conductor 10a can be connected to the substrate 200 by welding. For example, the first heat conductor 10a can be directly welded to the substrate 200, or the first heat conductor 10a can be inserted into the mounting hole 40 or mounting groove 50 of the substrate 200 while being welded, so as to improve the reliability and accuracy of installation.

[0085] Among them, Figure 1In the x-direction shown, the size of the second heat-conducting structure 20 is less than or equal to the size of the first heat-conducting body 10a. It is understood that while the second heat-conducting structure 20 dissipates heat from the top surface of the chip structure 300, it also obstructs the filling of the molding compound 400. For example, it may cause the sides of the second chip 62 chip structure 300 and the area below the second heat-conducting structure 20 to be incompletely filled with the molding compound 400. Therefore, the size of the second heat-conducting structure 20 can be appropriately reduced to minimize or prevent the area below the second heat-conducting structure 20 from being incompletely filled with the molding compound 400, thereby improving the molding effect.

[0086] In one exemplary embodiment, such as Figures 1 to 3 As shown, the packaging structure includes a substrate 200, a chip structure 300, a heat dissipation structure 100, and a molding compound 400. The heat dissipation structure 100 includes at least one first heat-conducting structure 10, which is disposed on the substrate 200 and extends vertically to the top of the molding compound 400. The heat dissipation structure 100 also includes a second heat-conducting structure 20, which is connected to the first heat-conducting structure 10 and is disposed parallel to the substrate 200.

[0087] The packaging structure provided in this disclosure can include any structure provided in the above embodiments.

[0088] refer to Figures 1 to 3 The chip structure 300 includes multiple stacked dies 60, also known as bare dies, which are small, unpackaged integrated circuits made of semiconductor material and capable of performing a predetermined function. Adhesive films 70 are provided between adjacent dies 60 and between the dies 60 and the packaging substrate 200. The adhesive film 70 can be, for example, a DAF (Die Attach Film). Using a DAF film to bond the dies 60 facilitates the stacking and thinning of the semiconductor packaging structure.

[0089] In this embodiment of the disclosure, reference is made to Figures 1 to 3 The chip structure 300 is illustrated by way of example, including a first chip 61 and a second chip 62. The first chip 61 is disposed on the substrate 200 and is electrically connected to the substrate 200 through a first lead 81. The second chip 62 is disposed on the first chip 61 and is electrically connected to the substrate 200 through a second lead 82.

[0090] When signals are transmitted through the bonding leads 80 (including the first lead 81 and the second lead 82), some energy is radiated outward in the form of electromagnetic waves, thus affecting the signal quality of the surrounding bonding leads 80. In the thickness direction of the chip structure 300, the second thermally conductive structure 20 of the heat dissipation structure 100 can be disposed between two adjacent bonding leads 80 (the first lead 81 and the second lead 82) to absorb the energy radiated outward from the bonding leads 80, thereby reducing interference between the bonding leads 80, improving the isolation between the bonding leads 80, and improving the S(Scatter) parameter. For example, when the operating frequency of the package structure is 6400MHz, its quarter wavelength is approximately 11.7mm; therefore, the length of the second thermally conductive structure 20 can be set to approximately 11.7mm.

[0091] It should be noted that the first heat-conducting structure 10 needs to be made of a conductive metal material so that the first heat-conducting structure 10 has the function of absorbing radiation energy.

[0092] In one embodiment, reference Figure 7 When the heat dissipation structure 100 is disposed in the bonding lead 80 area of ​​the substrate 200, the size of the heat dissipation structure 100 in the y direction can be set to be smaller than the size of the chip structure 300 in the y direction, so as to reduce the size of the package structure in the y direction and facilitate subsequent packaging.

[0093] In some embodiments, reference Figure 1 and Figure 4 Both the first heat-conducting structure 10 and the second heat-conducting structure 20 can be columnar.

[0094] refer to Figure 1 A heat dissipation structure 100 is shown. It can be understood that the heat dissipation structure 100, which is composed of a columnar first heat-conducting structure 10 and a second heat-conducting structure 20, has dimensions ( Figure 1 The x-direction shown is smaller, therefore, in the assembled state, it can be along... Figure 1 As shown, multiple heat dissipation structures 100 are arranged at intervals in the x-direction so that the heat dissipation structures 100 can be directly aligned with most areas of the chip structure 300, thereby improving the cooling effect on the chip structure 300.

[0095] In other embodiments, reference is made to Figure 5 and Figure 6 Both the first heat-conducting structure 10 and the second heat-conducting structure 20 can be plate-shaped.

[0096] refer to Figure 5 This illustrates a heat dissipation structure 100 having a plate-shaped first heat-conducting structure 10 and a plate-shaped second heat-conducting structure 20, wherein the first heat-conducting structure 10 and the second heat-conducting structure 20 are in a first direction ( Figure 1When the size in the x-direction shown is small, and the plate-shaped heat dissipation structure 100 is disposed in the area corresponding to the bonding lead 80 of the semiconductor package structure, it can be referred to Figure 5 The diagram shows the arrangement and quantity of the columnar heat dissipation structures 100. When the heat dissipation structures 100 are disposed in the area corresponding to the chip structure 300 of the semiconductor package structure, multiple heat dissipation structures 100 can be arranged at intervals along the first direction to cover most of the area of ​​the chip structure 300, thereby providing reliable heat dissipation for the chip structure 300.

[0097] refer to Figure 6 This illustrates another heat dissipation structure 100 having a plate-shaped first heat-conducting structure 10 and a plate-shaped second heat-conducting structure 20, wherein the first heat-conducting structure 10 and the second heat-conducting structure 20 are in a first direction ( Figure 1 The dimensions in the x-direction shown are relatively large. For example, the dimensions of the first heat-conducting structure 10 and the chip structure 300 in the first direction are similar, so only one heat dissipation structure 100 is needed to provide reliable heat dissipation for the chip structure 300.

[0098] In some embodiments, reference Figures 4 to 6 and combined Figure 19 The heat dissipation structure 100 also includes an insulating layer (not shown in the figures), which covers the surfaces of the first heat-conducting structure 10 and the second heat-conducting structure 20. The insulating layer may be made of thermal grease, thermal silicone, etc. By providing an insulating layer on the surfaces of the first heat-conducting structure 10 and the second heat-conducting structure 20, electrical connections between the heat dissipation structure 100 and structures such as bonding leads 80 and pads can be avoided, thereby improving the reliability of the heat dissipation structure 100.

[0099] In one example, reference Figures 4 to 6 and combined Figure 19 The top 11 of the first heat-conducting structure 10 of the heat dissipation structure 100 is not covered by an insulating layer. An insulating layer will reduce the heat exchange efficiency of the first heat-conducting structure 10. The top of the first heat-conducting structure 10 needs to be in contact with the external environment. By setting the insulating layer to not cover the top 11 of the first heat-conducting structure 10, the heat exchange efficiency between the heat dissipation structure 100 and the external environment can be improved.

[0100] In another example, refer to Figures 4 to 6 and combined Figure 19 The bottom 12 of the first heat-conducting structure 10 of the heat dissipation structure 100100 is not covered by an insulating layer. The bottom 12 of the first heat-conducting structure 10 is connected to the substrate 200 of the semiconductor packaging structure. By setting the insulating layer to not cover the bottom 12 of the first heat-conducting structure 10, the heat exchange efficiency between the heat dissipation structure 100 and the substrate 200 is improved.

[0101] In yet another example, refer to Figures 4 to 6The top 11 and bottom 12 of the second heat-conducting structure 20 of the heat dissipation structure 100 may not be covered by an insulating layer.

[0102] According to an exemplary embodiment of this disclosure, such as Figures 8 to 19 As shown in the embodiments of this disclosure, a method for fabricating a semiconductor packaging structure is also provided.

[0103] In one embodiment, such as Figures 8 to 14 As shown, a heat dissipation structure 100 is provided in the bonding wire area of ​​the package structure, which may specifically include the following steps:

[0104] Step S101: Provide the initial packaging structure.

[0105] In this step, refer to Figure 8 The initial package structure includes a substrate and a chip structure disposed on the package substrate. Mounting holes are provided in the area of ​​the substrate corresponding to the edge of the chip structure (see reference). Figure 3 ).

[0106] Step S102: Form the heat dissipation structure one and the first lead wire in sequence.

[0107] In this step, refer to Figure 9 and Figure 10 The bottom 12 of the first thermally conductive structure 10 of the heat dissipation structure 100a extends into the mounting hole on the substrate 200 to form a connection with the substrate 200. The first lead 81 is used to electrically connect the substrate 200 and the first chip 61 located at the bottom layer in the chip structure 300.

[0108] Among them, the height of the second heat-conducting structure 20 of the heat dissipation structure-100a is ( Figure 10 The z-direction shown is below the first lead 81.

[0109] Step S103: Form the second heat dissipation structure and the second lead in sequence.

[0110] The second lead 82 is used to electrically connect the substrate 200 and the second chip 62 in the chip structure 300.

[0111] In this step, refer to Figure 11 and Figure 12 The second heat dissipation structure and the second lead can be formed sequentially in the manner shown in step S102.

[0112] Among them, the height of the second heat-conducting structure 20 of the heat dissipation structure 20b is ( Figure 12 The height of the second heat-conducting structure 20 of the heat dissipation structure 20b (in the z direction shown) is higher than that of the first lead 81, and the height of the second heat-conducting structure 20 of the heat dissipation structure 20b is lower than that of the second lead 82.

[0113] Depending on the number of bare dies in the chip structure, an even greater number of heat dissipation structures and bonding wires can be added, which will not be elaborated further.

[0114] Step S104: Forming molding compound.

[0115] In this step, refer to Figure 11 and Figure 13 For example, molding compound 400 can be formed using a molding method. Molding compound 400 covers the sides and top surface of chip structure 300, as well as multiple bonding leads 80 and multiple heat dissipation structures 100. The material of molding compound 400 is, for example, epoxy molding compound (EMC).

[0116] Among them, reference Figure 13 The top surface of the molding compound is higher than the top 11 of the first heat-conducting structure 10 of the heat dissipation structure.

[0117] Step S105: Remove part of the molding compound to expose the top surface of the thermally conductive structure.

[0118] In this step, refer to Figure 14 Processes such as grinding or cutting can be used to remove part of the structure of the molding compound 400, thereby reducing the thickness of the molding compound 400 to expose the top surface of the heat-conducting structure 100.

[0119] It is understandable that by exposing the top surface of the first thermally conductive structure, the first thermally conductive structure can be in direct contact with the atmospheric environment (low-temperature region), which is conducive to conducting the heat inside the encapsulation structure to the atmospheric environment and improving the heat conduction efficiency.

[0120] In this embodiment, by setting a heat dissipation structure in the area corresponding to the bonding wire in the packaging structure, the heat dissipation structure can absorb the energy radiated outward by the bonding wire, thereby avoiding mutual interference between multiple bonding wires and improving signal quality.

[0121] In another embodiment, such as Figures 15 to 18 As shown, a heat dissipation structure is provided in the chip structure area of ​​the package structure, which may specifically include the following steps:

[0122] Step S201: Provide a packaging structure.

[0123] The implementation method and principle of this step are the same as those of step S101 in the aforementioned embodiments, and will not be repeated here.

[0124] Among them, reference Figure 3 The top surface of the substrate is provided with a mounting groove.

[0125] Step S202: Forming the heat dissipation structure.

[0126] In this step, refer to Figure 16 The first heat-conducting structure 10 of the heat dissipation structure 3100c is inserted into the mounting groove to form a connection with the substrate.

[0127] Step S203: Forming molding compound.

[0128] refer to Figure 17 This step is implemented in the same way and in the same principle as step S104 in the previous embodiment, and will not be repeated here.

[0129] Step S204: Remove part of the sealing structure to expose the top surface of the heat-conducting structure.

[0130] refer to Figure 18 This step is implemented in the same way and in the same principle as step S105 in the previous embodiment, and will not be repeated here.

[0131] In this embodiment, by setting a heat dissipation structure in the region corresponding to the chip structure in the semiconductor packaging structure, the heat generated by the bare die in the chip structure can be conducted to the top surface of the molding compound through the heat dissipation structure.

[0132] In yet another embodiment, reference is made to... Figure 19 Heat dissipation structures can be set in the areas of the semiconductor package structure corresponding to the chip structure and the areas corresponding to the bonding leads.

[0133] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0134] In the description of this specification, references to the terms "embodiment," "exemplary embodiment," "some implementation," "illustrated implementation," "example," etc., refer to specific features, structures, materials, or characteristics described in connection with an implementation or example that are included in at least one implementation or example of this disclosure.

[0135] In this specification, the illustrative expressions of the terms used do not necessarily refer to the same implementation or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more implementations or examples.

[0136] In the description of this disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0137] It is understood that the terms "first," "second," etc., as used in this disclosure may be used to describe various structures, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another.

[0138] In one or more accompanying drawings, the same elements are represented by similar reference numerals. For clarity, many parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. For simplicity, a structure obtained after several steps may be depicted in a single drawing. Many specific details of this disclosure, such as the structure, materials, dimensions, processing methods, and techniques of the devices, are described below to provide a clearer understanding of the disclosure. However, as those skilled in the art will understand, this disclosure may be implemented without adhering to these specific details.

[0139] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A packaging structure, characterized in that, include: substrate; A chip structure is disposed on the substrate; A heat dissipation structure is disposed on the substrate; A molding compound is disposed on the substrate and covers the chip structure and the heat dissipation structure; The heat dissipation structure includes: At least one first thermally conductive structure is disposed on the substrate and extends vertically to the top of the molding compound; A second thermally conductive structure is disposed on the first thermally conductive structure, the second thermally conductive structure is parallel to the substrate, and the second thermally conductive structure is located within the molding compound; The first thermally conductive structure includes: A first heat conductor is disposed on the substrate; A second heat conductor is disposed on the first heat conductor and extends to the top of the molding compound; Wherein, the size of the first heat conductor is greater than or equal to the size of the second heat conductor, and the second heat-conducting structure includes a through hole, the size of which is greater than or equal to the size of the second heat conductor.

2. The packaging structure according to claim 1, characterized in that, The second thermally conductive structure is located on the chip structure, and there is a gap between the via and the chip structure.

3. The packaging structure according to claim 1, characterized in that, The through hole is located at the junction of the first heat-conducting structure and the second heat-conducting structure.

4. The packaging structure according to claim 1, characterized in that, The first heat-conducting structure includes a plurality of second heat-conducting elements, and the plurality of second heat-conducting elements share the second heat-conducting structure.

5. The packaging structure according to claim 1, characterized in that, The first heat conductor is inserted into and / or soldered into the substrate.

6. The packaging structure according to claim 1, characterized in that, The size of the second heat-conducting structure is less than or equal to the size of the first heat-conducting body.

7. The packaging structure according to claim 1, characterized in that, The chip structure includes: A first chip is disposed on the substrate and electrically connected to the substrate via a first lead; The second chip is disposed on the first chip and electrically connected to the substrate via a second lead; The second heat-conducting structure is located between the first lead and the second lead, or the second heat-conducting structure is located below the first lead or the second lead.

8. The packaging structure according to claim 1, characterized in that, The heat dissipation structure includes two first heat-conducting structures, which span across the chip structure, and there is a gap between the first heat-conducting structures and the chip structure.

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