薄膜晶体管、显示装置、电子设备以及制造薄膜晶体管的方法
By controlling the carbon residue on the channel surface of the thin-film transistor and employing UV ozone treatment and heat treatment, the problem of negative threshold voltage shift in InSnZnO thin-film transistors under negative bias temperature stress was solved, resulting in more stable thin-film transistor performance.
CN116724402BActive Publication Date: 2026-07-17THE JAPAN SCI & TECH AGENCY
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- THE JAPAN SCI & TECH AGENCY
- Filing Date
- 2022-02-18
- Publication Date
- 2026-07-17
Smart Images
Figure CN116724402B_ABST
Abstract
在一个实施方式中，薄膜晶体管为形成在基板上的薄膜晶体管，包括：由至少含铟(In)的金属氧化物半导体层的至少一部分形成的沟道、栅电极、设置在所述沟道和所述栅电极之间的栅极绝缘层、以及连接到所述金属氧化物半导体层的源电极和漏电极。例如，通过使从所述沟道的表面到深度5nm的范围内的碳原子的平均浓度为1.5×1021cm‑3以下，能够有效地抑制由电压应力引起的阈值移位。
Need to check novelty before this filing date? Find Prior Art