An integrated device for cleaning and coating the inner wall of an elongated tubular workpiece and a method of using the same
Patent Information
- Application Number
- CN202310717498.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-16
- Publication Date
- 2026-09-22
- Estimated Expiration
- 2043-06-16
AI Technical Summary
[0004]本发明针对现有管筒工件内镀膜过程中等离子体清洗难,清洗效果差,污染物难以排出的问题,而提供一种细长管筒状工件内壁清洗及镀膜的一体化装置及其使用方法
[0027]目前,细长管筒内壁镀膜面临的一大难题是溅射清洗过程中污染物难以排出,污染物会在靶表面和管内壁之间交替吸附,无法排出,若清洗和镀膜装置和过程分离,则在衔接过程中会再次产生污染。本发明通过合理设计清洗及镀膜一体化装置,在清洗阶段先将待镀管和靶分离,采用待镀管空心阴极放电和靶磁控放电同时进行的方式,有效解决待镀管和靶清洗过程互相污染的问题,实现了污染物的顺利排出;通过待镀管在支架导轨的线性滑动实现清洗和镀膜过程的衔接,实现了对待镀管和靶的清洗及镀膜过程的连续进行。
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Figure CN116732486B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of surface treatment, specifically relating to an integrated device and method for cleaning and coating the inner wall of a slender tubular workpiece. Background Technology
[0002] There is a pressing need for coating the inner walls of slender, cylindrical workpieces. Despite extensive research by numerous scholars both domestically and internationally, the quality of coatings achieved using magnetron sputtering remains challenging to guarantee, primarily due to poor substrate-film interface quality. The target-substrate distance (SDD) is extremely small due to pipe diameter limitations, preventing the placement of a ground electrode. This precludes the use of tri-electrode discharge and self-glow discharge plasma cleaning via bias voltage, as is common in conventional magnetron sputtering. Consequently, the adsorbed molecular and oxide layers on the substrate surface cannot be effectively removed. Furthermore, while alternating discharge of the target and the workpiece cleans both surfaces, sputtering products are difficult to expel from the pipe, still causing contamination at the substrate-film interface. The poor adhesion at the substrate-film interface, without plasma cleaning, limits the coating's lifespan.
[0003] Currently, Bennett Laboratories in the United States has developed a cleaning method using an external liner on the target surface. During the discharge process, contaminants generated during cleaning of the inner wall of the target tube are adsorbed onto the surface of the liner. The liner is then removed for discharge deposition to improve the film-substrate adhesion. This method is effective to some extent, but it cannot clean the target surface during the process. Furthermore, the liner can scratch the target surface during removal, creating spark points during discharge. If a separate cleaning and deposition method is used, with cleaning and deposition performed in two separate furnace loads, the intermediate exposure to the atmosphere can cause minor oxidation and adsorption on the target and substrate surfaces, negating the purpose of the initial cleaning. Summary of the Invention
[0004] This invention addresses the problems of difficult plasma cleaning, poor cleaning effect, and difficulty in removing contaminants during the internal coating process of existing tubular workpieces, and provides an integrated device and method for cleaning and coating the inner wall of slender tubular workpieces.
[0005] An integrated device for cleaning and coating the inner wall of a slender tubular workpiece includes a cleaning power supply, a vacuum chamber, a support rail, a target power supply, an anode, a tube to be coated, a target, and an air inlet pipe.
[0006] The support rails, anode, and tube to be plated are all placed in a vacuum chamber;
[0007] The bracket guide rail includes a tube bracket, a column and a base. One end of the tube bracket is connected to the tube to be plated, and the other end is connected to the column through the guide rail groove in the column. The tube bracket can slide linearly along the guide rail groove. The column and the base are rigidly connected vertically. The base is fixed to the lower end of the inner wall of the vacuum chamber.
[0008] The anode is placed at the upper end of the inner wall of the vacuum chamber and extends towards the center of the vacuum chamber;
[0009] The target vertically penetrates the lower end of the inner wall of the vacuum chamber and the base of the support rail;
[0010] The anode, the tube to be plated, and the target are coaxially mounted and insulated from each other.
[0011] The vacuum chamber, support rail, and tube to be plated are connected.
[0012] Furthermore, the air intake pipe penetrates the lower end of the inner wall of the vacuum chamber.
[0013] Furthermore, the positive terminal of the cleaning power supply is connected to the anode, and the negative terminal is connected to the plating tube; the positive terminal of the target power supply is connected to the plating tube, and the negative terminal is connected to the target.
[0014] Furthermore, the cleaning power supply is a DC power supply or a pulse power supply; the current range is 0.01-100A, the voltage range is 10-50000V, the duty cycle range is 1-99%, the pulse frequency range is 0.5-100000Hz, and the pulse width range is 5-1000μs.
[0015] Furthermore, the target power supply is a DC power supply or a pulse power supply; the current range is 0.01-100A, the pulse frequency range is 0.5-100000Hz, the pulse width range is 5-1000μs, and the voltage range is 10-50000V.
[0016] Furthermore, the anode is made of filamentous or rod-shaped conductive material with a diameter ranging from 0.1 to 10 mm.
[0017] Furthermore, the tube to be plated is made of magnetic or non-magnetic conductive material, with an inner diameter of 15-1000mm and a length of 1-50000mm.
[0018] The method of using the above-mentioned integrated device for cleaning and coating the inner wall of a slender tubular workpiece is as follows:
[0019] 1. Clean the tube to be plated with acetone and anhydrous ethanol in sequence for 5-60 minutes using ultrasonic cleaning, then remove, dry and install it on the bracket guide rail.
[0020] 2. Evacuate the vacuum chamber to 8×10⁻⁶. -3 Introduce working gas and adjust the gas pressure to 0.01-20Pa. Adjust the tube to be coated to the position of the anode. Turn on the target power supply and cleaning power supply and adjust the parameters. At the same time, perform plasma sputtering cleaning on the target and the tube to be coated. The cleaning time is 5-300 minutes.
[0021] 3. Turn off the target power supply and cleaning power supply, adjust the tube to be coated to the position of the target, introduce the mixed gas of working gas and reaction gas and adjust the gas pressure to 0.1-10 Pa, turn on the target power supply and adjust the parameters, and perform magnetron sputtering coating for 1-3000 min to complete the above usage method.
[0022] Furthermore, the working gas mentioned in steps one and three is He, Ne, Ar, Kr, Xe, or Rn.
[0023] Furthermore, the reaction gas mentioned in step three is N2, H2, CH4, H2S, NH3, or O2.
[0024] Furthermore, the working gas and the reaction gas mentioned in step three are mixed in any ratio.
[0025] The present invention discloses an integrated device for cleaning and coating the inner wall of a slender tubular workpiece. The tube to be coated, the target, and the anode are coaxially installed. The tube to be coated can achieve cleaning and coating functions by sliding to the area where the anode or the target is located.
[0026] The advantages of this invention are:
[0027] Currently, a major challenge in coating the inner wall of slender tubes is the difficulty in removing contaminants during the sputtering cleaning process. Contaminants alternately adhere to the target surface and the inner wall of the tube, making removal impossible. If the cleaning and coating devices and processes are separated, contamination can occur again during the connection process. This invention addresses this issue by rationally designing an integrated cleaning and coating device. During the cleaning stage, the tube to be coated and the target are separated. Simultaneous hollow cathode discharge on the tube and magnetron discharge on the target effectively solves the problem of cross-contamination between the tube and target during cleaning, ensuring smooth removal of contaminants. The linear sliding of the tube on the support rail connects the cleaning and coating processes, enabling continuous cleaning and coating of both the tube and target.
[0028] Meanwhile, the device of this invention is simple, easy to operate, and the entire process is tightly integrated, consistent with the conventional planar coating process. It effectively overcomes the problems existing in other in-tube coating methods, has good application prospects, and is conducive to large-scale promotion in industrial production. This invention ensures the stability of the device during the movement of the tube to be coated on the support rail, and the material strength and processing precision fully meet the requirements.
[0029] In addition, the device of the present invention is also applicable to the surface treatment of the inner wall of tubes, the outer surface treatment of irregular parts, or the surface treatment of flat parts; its surface treatment content is not only applicable to plasma etching cleaning and coating alone or in combination, but also applicable to surface treatment processes such as nitriding, carburizing, sulfidation and oxidation.
[0030] The integrated device in this invention is suitable for cleaning and coating the inner wall of slender tubular workpieces. Attached Figure Description
[0031] Figure 1 This is a schematic diagram of the integrated device for cleaning and coating the inner wall of a slender tubular workpiece in this invention, during plasma sputtering cleaning. In the diagram, 1 represents the cleaning power supply, (2) represents the vacuum chamber, (3) represents the support rail, (4) represents the target power supply, (5) represents the anode, (6) represents the tube to be coated, (7) represents the target, and (8) represents the air inlet pipe.
[0032] Figure 2 This is a schematic diagram of the integrated device for cleaning and coating the inner wall of a slender tubular workpiece in this invention, during magnetron sputtering coating. In the diagram, 1 represents the cleaning power supply, (2) represents the vacuum chamber, (3) represents the support rail, (4) represents the target power supply, (5) represents the anode, (6) represents the tube to be coated, (7) represents the target, and (8) represents the air inlet pipe.
[0033] Figure 3 The image shows the surface element distribution of an Al tube with an inner diameter of Φ50mm pre-coated with Cu film in Example 1 before plasma sputtering cleaning.
[0034] Figure 4 The image shows the surface element distribution of an Al tube with an inner diameter of Φ50mm pre-coated with Cu film in Example 1 after plasma sputtering cleaning.
[0035] Figure 5 The indentation pattern of the carbon steel pipe with an inner diameter of Φ50mm in Example 2, which was directly subjected to magnetron sputtering coating without plasma sputtering cleaning;
[0036] Figure 6 The image shows the indentation pattern of a carbon steel pipe with an inner diameter of Φ50mm in Example 2, which was cleaned by plasma sputtering and then coated by magnetron sputtering. Detailed Implementation
[0037] Specific implementation method one: as follows Figures 1-2 As shown in the figure, this embodiment is an integrated device for cleaning and coating the inner wall of a slender tubular workpiece. It includes a cleaning power supply 1, a vacuum chamber 2, a support rail 3, a target power supply 4, an anode 5, a tube to be coated 6, a target 7, and an air inlet pipe 8.
[0038] The bracket guide rail 3, anode 5 and the tube to be plated 6 are all placed inside the vacuum chamber 2;
[0039] The bracket guide rail 3 includes a tube bracket, a column and a base. One end of the tube bracket is connected to the tube to be plated 6, and the other end is connected to the column through the guide rail groove in the column. The tube bracket can slide linearly along the guide rail groove. The column and the base are rigidly connected vertically. The base is fixed to the lower end of the inner wall of the vacuum chamber 2.
[0040] The anode 5 is placed on the upper end of the inner wall of the vacuum chamber 2 and extends toward the middle of the vacuum chamber 2;
[0041] The target 7 penetrates vertically through the lower end of the inner wall of the vacuum chamber 2 and the base of the support rail 3;
[0042] The anode 5, the tube to be plated 6, and the target 7 are coaxially mounted and insulated from each other.
[0043] The vacuum chamber 2, the support rail 3, and the tube to be plated 6 are connected.
[0044] In this embodiment, both the vacuum chamber 2 and the support rail 3 are made of conductive materials.
[0045] Specific Implementation Method Two: This implementation method differs from Specific Implementation Method One in that the air inlet pipe 8 penetrates the lower end of the inner wall of the vacuum chamber 2. Everything else is the same as in Specific Implementation Method One.
[0046] Specific Implementation Method 3: This implementation method differs from Specific Implementation Method 1 in that the positive terminal of the cleaning power supply 1 is connected to the anode 5, and the negative terminal is connected to the plating tube 6; the positive terminal of the target power supply 4 is connected to the plating tube 6, and the negative terminal is connected to the target 7. Everything else is the same as in Specific Implementation Method 1.
[0047] Specific Implementation Method Four: This implementation method differs from Specific Implementation Method One in that the cleaning power supply 1 is a DC power supply or a pulse power supply; the current range is 0.01-100A, the voltage range is 10-50000V, the duty cycle range is 1-99%, the pulse frequency range is 0.5-100000Hz, and the pulse width range is 5-1000μs. Everything else is the same as in Specific Implementation Method One.
[0048] Specific Implementation Method Five: This implementation method differs from Specific Implementation Method One in that the target power supply 4 is a DC power supply or a pulse power supply; the current range is 0.01-100A, the pulse frequency range is 0.5-100000Hz, the pulse width range is 5-1000μs, and the voltage range is 10-50000V. Everything else is the same as in Specific Implementation Method One.
[0049] Specific Implementation Method Six: This implementation method differs from Specific Implementation Method Five in that the anode 5 is made of a filamentous or rod-shaped conductive material with a diameter ranging from 0.1 to 10 mm. Everything else is the same as in Specific Implementation Method Five.
[0050] Specific Implementation Method Seven: This implementation method differs from Specific Implementation Method Five in that the material of the tube 6 to be plated is a magnetic or non-magnetic conductive material, with an inner diameter of 15-1000mm and a length of 1-50000mm. Everything else is the same as in Specific Implementation Method Five.
[0051] Specific Implementation Method Eight: The following steps are used to implement the integrated device for cleaning and coating the inner wall of a slender tubular workpiece:
[0052] 1. Clean the tube 6 to be plated with acetone and anhydrous ethanol in sequence for 5-60 minutes using ultrasonic cleaning, then remove, dry and install it on the bracket guide rail 3.
[0053] 2. Evacuate vacuum chamber 2 to 8×10⁻⁶. -3 Introduce working gas and adjust the gas pressure to 0.01-20Pa. Adjust the tube to be plated 6 to the position of the anode 5. Turn on the target power supply 4 and the cleaning power supply 1 and adjust the parameters. At the same time, perform plasma sputtering cleaning on the target 7 and the tube to be plated 6. The cleaning time is 5-300min.
[0054] 3. Turn off the target power supply 4 and the cleaning power supply 1, adjust the tube to be coated 6 to the position of the target 7, introduce the mixed gas of working gas and reaction gas and adjust the gas pressure to 0.1-10 Pa, turn on the target power supply 4 and adjust the parameters, and perform magnetron sputtering coating for 1-3000 min to complete the above usage method.
[0055] Specific Implementation Method Nine: This implementation method differs from Specific Implementation Method Eight in that the working gas mentioned in steps one and three is He, Ne, Ar, Kr, Xe, or Rn. Everything else is the same as in Specific Implementation Method Eight.
[0056] Specific Implementation Method Ten: This implementation method differs from Specific Implementation Method Eight in that the reaction gas in step three is N2, H2, CH4, H2S, NH3, or O2. Everything else is the same as in Specific Implementation Method Eight.
[0057] Specific Implementation Method Eleven: This implementation method differs from Specific Implementation Method Eight in that the working gas and reactant gas in step three are mixed in any ratio. Everything else is the same as in Specific Implementation Method Eight.
[0058] The beneficial effects of the present invention are verified through the following embodiments:
[0059] Example 1:
[0060] The method of using an integrated device for cleaning and coating the inner wall of a slender tubular workpiece is as follows:
[0061] 1. Clean the tube 6 to be plated with acetone and anhydrous ethanol by ultrasonic cleaning for 30 minutes in sequence, then take it out, dry it and install it on the bracket guide rail 3.
[0062] 2. Evacuate vacuum chamber 2 to 8×10⁻⁶. -3Introduce working gas and adjust the pressure to 5 Pa. Position the tube to be coated 6 to the location of the anode 5. Turn on the target power supply 4 and the cleaning power supply 1 and adjust the parameters. Simultaneously, perform plasma sputtering cleaning on the target 7 and the tube to be coated 6 for 60 minutes. Figure 1 (As shown)
[0063] 3. Turn off the target power supply 4 and the cleaning power supply 1. Adjust the tube to be coated 6 to the position of the target 7. Introduce the mixture of working gas and reactive gas and adjust the gas pressure to 0.6 Pa. Turn on the target power supply 4 and adjust the parameters. Perform magnetron sputtering coating for 120 minutes to complete the above-described method. (e.g.) Figure 2 (As shown)
[0064] In step two of this embodiment, the working gas is Ar.
[0065] In steps two and three of this embodiment, the mixed gas is Ar and N2, with a volume ratio of 1:1.
[0066] In step two of this embodiment, the cleaning power supply 1 is a medium-frequency power supply; the current is 0.5A, the voltage is 800V, and the duty cycle is 80%.
[0067] In step two of this embodiment, the target power supply 4 is a high-power pulse power supply; the pulse frequency is 100Hz, the pulse width is 100μs, and the voltage is 450V.
[0068] In step three of this embodiment, the target power supply 4 is a bipolar high-power pulse power supply; the pulse frequency is 300Hz, the negative pulse voltage is 600V, the pulse width is 100μs, the positive pulse voltage is 100V, and the pulse width is 50μs.
[0069] In step one of this embodiment, the tube 6 to be plated is an Al tube with an inner diameter of Φ50mm pre-plated with Cu film. After plasma sputtering cleaning in step two, the Cu film on the inner wall is almost completely etched away. Figure 3 and 4 As shown in the figure, the device in this embodiment can perform cleaning very well even when used alone. After magnetron sputtering coating in step three, the adhesion of the resulting film is significantly better than that of the existing unwashed film, indicating a good film-substrate bonding effect.
[0070] Example 2:
[0071] The method of using an integrated device for cleaning and coating the inner wall of a slender tubular workpiece is as follows:
[0072] 1. Clean the tube 6 to be plated with acetone and anhydrous ethanol by ultrasonic cleaning for 30 minutes in sequence, then take it out, dry it and install it on the bracket guide rail 3.
[0073] 2. Evacuate vacuum chamber 2 to 8×10⁻⁶. -3Introduce working gas and adjust the pressure to 5 Pa. Position the tube to be coated 6 to the location of the anode 5. Turn on the target power supply 4 and the cleaning power supply 1 and adjust the parameters. Simultaneously, perform plasma sputtering cleaning on the target 7 and the tube to be coated 6 for 60 minutes. Figure 1 (As shown)
[0074] 3. Turn off the target power supply 4 and the cleaning power supply 1. Adjust the tube to be coated 6 to the position of the target 7. Introduce the mixture of working gas and reactive gas and adjust the gas pressure to 0.6 Pa. Turn on the target power supply 4 and adjust the parameters. Perform magnetron sputtering coating for 120 minutes to complete the above-described method. (e.g.) Figure 2 (As shown)
[0075] In step two of this embodiment, the working gas is Ar.
[0076] In steps two and three of this embodiment, the mixed gas is Ar and H2, with a volume ratio of 1:1.
[0077] In step two of this embodiment, the cleaning power supply 1 is a medium-frequency power supply with a current of 0.5A, a voltage of 800V, and a duty cycle of 80%.
[0078] In step two of this embodiment, the target power supply 4 is a high-power pulse power supply; the pulse frequency is 100Hz, the pulse width is 100μs, and the voltage is 450V.
[0079] In step three of this embodiment, the target power supply 4 is a bipolar high-power pulse power supply; the pulse frequency is 300Hz, the negative pulse voltage is 600V, the pulse width is 100μs, the positive pulse voltage is 100V, and the pulse width is 50μs.
[0080] In this embodiment, the tube 6 to be coated in step one is a carbon steel tube with an inner diameter of Φ50mm. After plasma sputtering cleaning in step two, the inner wall of the carbon steel tube is cleaned. After magnetron sputtering coating in step three, the adhesion of the resulting film is significantly better than that of the existing uncleaned film, indicating a good film-substrate bonding effect. Figure 5 and Figure 6 As shown.
[0081] Example 3:
[0082] The difference between this embodiment and Embodiment 1 is that in step one, the tube 6 to be plated is a carbon steel tube with an inner diameter of Φ40mm that has been pre-plated with a Cr film; otherwise, it is the same as in Embodiment 1.
[0083] In this embodiment, after plasma sputtering cleaning in step two, the Cr film on the inner wall is almost completely etched away. After magnetron sputtering coating in step three, the resulting film layer has significantly better adhesion than the existing uncleaned film layer.
[0084] Example 4:
[0085] The difference between this embodiment and Embodiment 1 is that in step one, the tube 6 to be plated is a stainless steel tube with an inner diameter of Φ50mm pre-plated with TiN film; all other aspects are the same as in Embodiment 1.
[0086] In this embodiment, after plasma sputtering cleaning in step two, the TiN film on the inner wall is almost completely etched away. After magnetron sputtering coating in step three, the resulting film layer has significantly better adhesion than the existing uncleaned film layer.
[0087] In this embodiment, the device is also applicable to the surface treatment of the inner wall of tubes, the outer surface treatment of irregular parts, or the surface treatment of planar parts; its surface treatment content is not only applicable to plasma etching cleaning and coating alone or in combination, but also applicable to surface treatment processes such as nitriding, carburizing, sulfidation and oxidation.
[0088] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. An integrated device for cleaning and coating the inner wall of a slender tubular workpiece, characterized in that... It includes a cleaning power supply (1), a vacuum chamber (2), a support rail (3), a target power supply (4), an anode (5), a tube to be plated (6), a target (7), and an air inlet pipe (8). The support rail (3), anode (5) and the tube to be plated (6) are all placed inside the vacuum chamber (2); The bracket guide rail (3) includes a tube bracket, a column and a base. One end of the tube bracket is connected to the tube to be plated (6), and the other end is connected to the column through the guide rail groove inside the column. The tube bracket can slide linearly along the guide rail groove. The column and the base are rigidly connected vertically. The base is fixed to the lower end of the inner wall of the vacuum chamber (2). The anode (5) is placed on the upper end of the inner wall of the vacuum chamber (2) and extends toward the middle of the vacuum chamber (2); The target (7) penetrates vertically through the lower end of the inner wall of the vacuum chamber (2) and the base of the support rail (3); The anode (5), the tube to be plated (6), and the target (7) are coaxially mounted and insulated from each other; The vacuum chamber (2), the support rail (3), and the tube to be plated (6) are connected; The positive electrode of the cleaning power supply (1) is connected to the anode (5), and the negative electrode is connected to the plating tube (6); the positive electrode of the target power supply (4) is connected to the plating tube (6), and the negative electrode is connected to the target (7).
2. The integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 1, characterized in that, The air inlet pipe (8) penetrates the lower end of the inner wall of the vacuum chamber (2).
3. The integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 1, characterized in that, The cleaning power supply (1) is a DC power supply or a pulse power supply; When the cleaning power supply (1) is a DC power supply, the current range is 0.01-100A and the voltage range is 10-50000V; When the cleaning power supply (1) is a pulse power supply, the current range is 0.01-100A, the voltage range is 10-50000V, the duty cycle range is 1-99%, the pulse frequency range is 0.5-100000Hz, and the pulse width range is 5-1000μs.
4. The integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 1, characterized in that, The target power supply (4) is a DC power supply or a pulse power supply; When the target power supply (4) is a DC power supply, the current range is 0.01-100A and the voltage range is 10-50000V; When the target power supply (4) is a pulse power supply, the current range is 0.01-100A, the voltage range is 10-50000V, the pulse frequency range is 0.5-100000Hz, and the pulse width range is 5-1000μs.
5. The integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 1, characterized in that, The anode (5) is made of filamentous or rod-shaped conductive material with a diameter ranging from 0.1 to 10 mm.
6. The integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 1, characterized in that, The tube to be plated (6) is made of magnetic or non-magnetic conductive material, with an inner diameter of 15-1000mm and a length of 1-50000mm.
7. The method of using the integrated device for cleaning and coating the inner wall of a slender tubular workpiece as described in claim 1, characterized in that, It is implemented in the following steps:
1. Clean the tube (6) to be plated with acetone and anhydrous ethanol in sequence for 5-60 minutes, take it out, dry it and install it on the bracket guide rail (3); 2. Evacuate the vacuum chamber (2) to 8×10 -3 Pa, introduce working gas and adjust the gas pressure to 0.01-20Pa, adjust the tube to be plated (6) to the position of the anode (5), turn on the target power supply (4) and cleaning power supply (1) and adjust the parameters, and at the same time perform plasma sputtering cleaning on the target (7) and the tube to be plated (6) for 5-300min.
3. Turn off the target power supply (4) and the cleaning power supply (1), adjust the tube to be coated (6) to the position of the target (7), introduce the mixed gas of working gas and reaction gas and adjust the gas pressure to 0.1-10Pa, turn on the target power supply (4) and adjust the parameters, and perform magnetron sputtering coating for 1-3000 minutes to complete the above usage method.
8. The method of using the integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 7, characterized in that, The working gas mentioned in steps two and three is He, Ne, Ar, Kr or Xe.
9. The method of using the integrated device for cleaning and coating the inner wall of a slender tubular workpiece according to claim 7, characterized in that, The reaction gas mentioned in step three is N2, H2, CH4, H2S, NH3, or O2.
Citation Information
Patent Citations
Multi-station device special for long pipe efficient magnetron sputtering film-coating
CN109576668A
Device and method for improving surface smoothness and film-substrate bonding strength of inner wall coating of pipe barrel part
CN116219374A