Method for processing silicon residue after rod breaking and single crystal furnace

Abstract

The application discloses a method for processing silicon slag remaining after rod breaking and a single crystal furnace. The method comprises processing the silicon slag by using the single crystal furnace. The single crystal furnace comprises a guide cylinder and a crucible located in a main chamber, and a weight located in a sub-chamber. The guide cylinder is located above the crucible. The weight is connected with a seed crystal rotating and lifting mechanism. The seed crystal rotating and lifting mechanism drives the weight to move in a vertical direction. The bottom of the weight is connected with a silicon slag hitting device. The method comprises the following steps: after rod breaking, the remaining crystal rod is lifted out of the sub-chamber and removed by opening the sub-chamber; the silicon slag hitting device is assembled on the weight; the silicon slag hitting device is lifted into the sub-chamber. The seed crystal rotating and lifting mechanism drives the silicon slag hitting device to move downward in the vertical direction through the weight, so that the silicon slag hitting device knocks down the silicon slag and falls into the crucible below the guide cylinder. The silicon slag remaining after rod breaking is separated from the guide cylinder without heating.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, and more specifically, to a method for treating residual silicon slag after silicon rod explosion and a single crystal furnace. Background Technology

[0002] The production of Czochralski single crystal silicon rods is carried out in a single crystal furnace. The rod pulling process involves using a weighted hammer connected to a graphite chuck to hold the seed crystal, which is then inserted into the surface of the melt for fusion. Simultaneously, the seed crystal rotates in the forward direction while the crucible rotates in the reverse direction, and the seed crystal is slowly lifted upward to promote crystal growth and pull it into a rod.

[0003] During the crystal pulling process, factors such as vibration sources in the environment and airflow vortices in the single crystal furnace can cause the crystal ingot being pulled to shake (arc-like movement), or the single crystal furnace itself may cause the crystal ingot to vibrate, or the crystal ingot may detach from the silicon solution too quickly, or the crystal ingot temperature may drop too quickly. Any of these situations can lead to crystal ingot explosion, making it impossible to pull the crystal ingot further.

[0004] Currently, the method for removing residual silicon slag after blasting by heating it off the guide tube is problematic because it requires lowering the height of the guide tube. However, controlling the height of the guide tube relies solely on the observation window of the auxiliary chamber, which leads to issues with the guide tube being positioned too high or too low. On the one hand, if the guide tube is positioned too high, the silicon slag will be difficult to melt, while if the guide tube is positioned too low, it may come into contact with the molten silicon below, causing damage to the guide tube. Furthermore, the silicon slag needs to be melted using the heat from the molten silicon below, which takes a long time and is inefficient. Therefore, this is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of this, the present invention provides a method for treating residual silicon slag after blasting rods, which solves the problem of the guide tube being damaged due to direct contact with the high-temperature silicon liquid in the crucible below.

[0006] In a first aspect, this application provides a method for treating residual silicon slag after a crystal blasting process. The method utilizes a single crystal furnace to treat the silicon slag. The single crystal furnace includes a flow guide cylinder and a crucible located in the main chamber, and a counterweight located in the secondary chamber. The main chamber and the secondary chamber are connected. The flow guide cylinder is located above the crucible. The counterweight is connected to a seed crystal rotation and lifting mechanism. The seed crystal rotation and lifting mechanism drives the counterweight to move relative to the crystal slag in the vertical direction. A silicon slag impact device is connected to the bottom of the counterweight.

[0007] Includes the following steps:

[0008] After the crystal rod explodes, the sub-chamber is opened and the remaining crystal rods are lifted out of the sub-chamber and removed.

[0009] The silicon slag impact device is mounted on the heavy hammer;

[0010] The silicon slag impact device is hoisted into the secondary chamber, and the seed crystal rotation and lifting mechanism uses the weight to make the silicon slag impact device move downward in the vertical direction, so that the silicon slag impact device knocks down the silicon slag and falls into the crucible.

[0011] Optionally, it also includes:

[0012] After removing the silicon slag, the silicon slag removal device is rotated out of the auxiliary chamber by the seed crystal rotation lifting mechanism, and then removed after cooling.

[0013] Secondly, this application provides a single crystal furnace, including a main chamber and a secondary chamber connected to the main chamber. The main chamber is provided with a flow guide tube and a crucible located below the flow guide tube. The secondary chamber is provided with a weight, which is connected to a seed crystal rotation and lifting mechanism via a steel wire rope. The seed crystal rotation and lifting mechanism drives the weight to move relative to the main chamber in a vertical direction. A silicon slag impacting device is connected to the bottom of the weight, and the orthographic projection of the silicon slag impacting device does not overlap with the orthographic projection of the flow guide tube.

[0014] Optionally, the hammer is detachably connected to the silicon slag impact device.

[0015] Optionally, the hammer is threadedly connected to the silicon slag impact device.

[0016] Optionally, a bolt is provided on the side of the hammer near the silicon slag impact device, and an internal thread that mates with the bolt is provided on the side of the silicon slag impact device near the hammer, and the bolt is threadedly connected to the internal thread.

[0017] Optionally, the silicon slag impact device is cylindrical in shape.

[0018] Optionally, the diameter of the silicon slag impacting device ranges from 220mm to 250mm, and the length of the silicon slag impacting device ranges from 1000mm to 1500mm.

[0019] Optionally, the silicon slag impact device includes a first part and a second part connected to the first part. The first part is located on the side away from the hammer, and the second part is located on the side close to the hammer. The first part is cylindrical in shape, and the second part is cylindrical, rectangular, trapezoidal, or sector-shaped.

[0020] Optionally, the silicon slag impact device is made of quartz.

[0021] Compared with the prior art, the method for treating residual silicon slag after silicon rod blasting and the single crystal furnace provided by the present invention achieve at least the following beneficial effects:

[0022] This invention provides a method for treating residual silicon slag after crystal rod explosion and a single crystal furnace. The method involves treating the residual silicon slag using a single crystal furnace. The single crystal furnace includes a flow guide cylinder and a crucible located in the main chamber, and a weight located in the secondary chamber. The main chamber and the secondary chamber are connected. The flow guide cylinder is located above the crucible. The weight is connected to a seed crystal rotation and lifting mechanism, which drives the weight to move vertically relative to the crystal rod. A silicon slag impact device is connected to the bottom of the weight. The method includes the following steps: after the crystal rod explodes, opening the secondary chamber and lifting the remaining crystal rod out of the secondary chamber and removing it; assembling the silicon slag impact device onto the weight; lifting the silicon slag impact device into the secondary chamber, and rotating the seed crystal. The lifting mechanism uses a hammer to drive the silicon slag impact device to move vertically relative to the silicon slag, causing the impact device to knock down the silicon slag and drop it into the crucible below the guide tube. Using this method, through the mechanical force of gravity, such as the seed crystal rotation lifting mechanism driving the silicon slag impact device to move vertically downwards, the residual silicon slag after the rod explosion is removed from the guide tube and falls into the molten silicon in the crucible below. Therefore, the residual silicon slag after the rod explosion does not need to be removed from the guide tube by heating, thus avoiding direct contact between the guide tube and the high-temperature molten silicon in the crucible below. Since the guide tube does not need to directly contact the high-temperature molten silicon in the crucible, its service life can be extended, and the processing efficiency can be effectively improved.

[0023] Of course, any product implementing this invention does not necessarily need to achieve all of the technical effects described above at the same time.

[0024] Other features and advantages of the invention will become clear from the following detailed description of exemplary embodiments of the invention with reference to the accompanying drawings. Attached Figure Description

[0025] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the invention and, together with their description, serve to explain the principles of the invention.

[0026] Figure 1 This is a schematic flowchart of a method for treating residual silicon slag after blasting rods, provided by the present invention.

[0027] Figure 2 This is a schematic diagram of the structure of a single crystal furnace provided by the present invention;

[0028] Figure 3 This is a schematic diagram of the structure of a hammer and silicon slag impact device provided by the present invention;

[0029] Figure 4 yes Figure 3 Enlarged view of point A in the middle;

[0030] Figure 5 This is a schematic diagram of the structure of another hammer and silicon slag impact device provided by the present invention;

[0031] Figure 6This is a schematic diagram of another hammer and silicon slag impact device provided by the present invention. Detailed Implementation

[0032] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention.

[0033] The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the invention or its application or use.

[0034] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and equipment should be considered part of the specification.

[0035] In all the examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0036] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0037] Figure 1 This is a flowchart illustrating a method for treating residual silicon slag after blasting rods, provided by the present invention; see reference. Figure 1 As shown in the figure, this embodiment describes a method for treating residual silicon slag after a crystal rod explosion. The silicon slag 3 is treated using a single crystal furnace. The single crystal furnace includes a flow guide cylinder 11 and a crucible 12 located in the main chamber 1, and a weight 21 located in the auxiliary chamber 2. The main chamber 1 and the auxiliary chamber 2 are connected. The flow guide cylinder 11 is located above the crucible 12. The weight 21 is connected to a seed crystal rotation and lifting mechanism 22. The seed crystal rotation and lifting mechanism 22 drives the weight 21 to move relative to each other in the vertical direction. A silicon slag impacting device 23 is connected to the bottom of the weight 21.

[0038] The process includes the following steps: after the crystal rod explodes, open the secondary chamber 2, lift the remaining crystal rod out of the secondary chamber 2 and remove it; assemble the silicon slag impact device 23 onto the hammer 21; lift the silicon slag impact device 23 into the secondary chamber 2, and the seed crystal rotation lifting mechanism 22 drives the silicon slag impact device 23 to move vertically downward through the hammer 21, so that the silicon slag impact device 23 knocks down the silicon slag 3 and drops it into the crucible 12.

[0039] Specifically, continue to refer to Figure 1As shown, residual silicon slag 3 is treated using a single crystal furnace. A single crystal furnace is a device that melts polycrystalline materials such as polycrystalline silicon using a graphite heater in an inert gas environment (mainly nitrogen and helium) and grows dislocation-free single crystals using the Czochralski method.

[0040] The single crystal furnace includes a main chamber 1 and a secondary chamber 2. The main chamber 1 is equipped with a crucible 12 that carries the molten silicon. The crucible 12 can be a quartz crucible. Inside the furnace chamber at the upper end of the crucible 12, there is a guide tube 11 with openings at the upper and lower ends. The guide tube 11 can guide the flow of high-temperature gas, allowing the airflow of inert gas (such as argon) to pass through the guide tube 11 from top to bottom and be introduced into the interior of the thermal field. This carries away the SiO above the silicon solution and cools the single crystal silicon, increasing its longitudinal temperature gradient and enabling the single crystal to grow rapidly. The secondary chamber 2 can be a hollow structure. The main body of the secondary chamber 2 is connected to the main chamber 1.

[0041] The hammer 21 is responsible for lifting the high-temperature molten silicon crystals in the crucible 12 of the furnace and gradually crystallizing them upwards to form columnar silicon crystals. The seed crystal rotation and lifting mechanism 22 is connected to the hammer 21 and is responsible for driving the hammer 21 to move up and down in the vertical direction. Depending on the actual situation, the seed crystal rotation and lifting mechanism 22 can also rotate in the circumferential direction. A silicon slag impacting device 23 is connected to the bottom of the hammer 21. When the crystalline silicon explodes, the silicon slag impacting device 23 is responsible for cleaning the residual silicon slag 3 remaining on the guide tube 11.

[0042] Includes the following steps: Continue to refer to Figure 1 As shown, firstly, after the crystal ingot explodes, the auxiliary chamber 2 of the single crystal furnace is opened, and the auxiliary chamber 2 is unscrewed by the seed crystal rotation and lifting mechanism 22. After cooling, the remaining crystal ingot is removed. Secondly, the hammer 21 is assembled with the silicon slag impacting device 23. Optionally, the hammer 21 and the silicon slag impacting device 23 can be connected by threads. Specifically, a bolt 210 structure is provided at the bottom of the hammer 21, and the outer surface of the bolt 210 structure is provided with external threads (not shown in the figure). An internal thread 230 that mates with the external threads is provided at the top of the silicon slag impacting device 23. The external thread of the hammer 21 is connected to the internal thread 230 of the silicon slag impact device 23. Then, the silicon slag impact device 23 is slowly hoisted into the sub-chamber 2 of the single crystal furnace by the seed crystal rotation and lifting mechanism 22 and screwed into the sub-chamber 2 of the single crystal furnace. Since the sub-chamber 2 is connected to the main chamber 1, the silicon slag impact device 23 is slowly lowered by the seed crystal rotation and lifting mechanism 22, so that the silicon slag impact device 23 knocks down the silicon slag 3 at the bottom of the guide tube 11. The silicon slag 3 falls into the silicon solution in the crucible 12, thereby achieving the purpose of removing the residual silicon slag 3 below the guide tube 11.

[0043] As can be seen from the above embodiments, the method for treating residual silicon slag after blasting provided in this embodiment achieves at least the following beneficial effects:

[0044] The method for treating residual silicon slag after ingot blasting provided in this embodiment utilizes a single crystal furnace to process the silicon slag 3. The single crystal furnace includes a guide tube 11 and a crucible 12 located in the main chamber 1, and a weight 21 located in the auxiliary chamber 2. The main chamber 1 and the auxiliary chamber 2 are connected. The guide tube 11 is located above the crucible 12. The weight 21 is connected to a seed crystal rotation and lifting mechanism 22, which drives the weight 21 to move vertically relative to the crystal. A silicon slag impacting device 23 is connected to the side of the weight 21 near the guide tube 11. The method includes the following steps: after the ingot blasting, the auxiliary chamber 2 is opened to lift the remaining ingot out of the auxiliary chamber 2 and remove it; the silicon slag impacting device 23 is assembled onto the weight 21; the silicon slag impacting device 23 is lifted into the auxiliary chamber 2, and the seed crystal rotation and lifting mechanism 22 drives the silicon slag impacting device through the weight 21. The device 23 moves vertically relative to the silicon slag, causing the silicon slag impact device 23 to knock down the silicon slag 3 and drop it into the crucible 12 below the guide tube 11. With this scheme, the silicon slag impact device 23 is driven to move vertically downward by the mechanical force of gravity, such as the seed crystal rotation and lifting mechanism 22, so that the silicon slag 3 remaining after the rod is blown is removed from the guide tube 11 and falls into the silicon liquid in the crucible 12 below. Thus, the silicon slag remaining after the rod is blown does not need to be removed from the guide tube by heating, thereby avoiding the silicon slag 3 being difficult to melt due to the guide tube 11 being too high, and avoiding the guide tube 11 being too low and coming into contact with the high-temperature silicon liquid in the crucible below. Since the guide tube 11 does not need to directly contact the high-temperature silicon liquid in the crucible, the service life of the guide tube can be extended, and the processing efficiency can be effectively improved.

[0045] In an alternative embodiment, continue to refer to Figure 1 As shown, it also includes: after removing silicon slag 3, the silicon slag impacting device 23 is rotated out of the sub-chamber 2 of the single crystal furnace by the seed crystal rotation lifting mechanism 22. After cooling down, the weight 21 is separated from the silicon slag impacting device 23, and the silicon slag impacting device 23 is removed. It can be reused, saving costs.

[0046] Figure 2 This is a schematic diagram of the structure of a single crystal furnace provided by the present invention; see reference. Figure 2 As shown, this embodiment provides a single crystal furnace, including a main chamber 1 and a secondary chamber 2 connected to the main chamber 1. The main chamber 1 is provided with a flow guide cylinder 11 and a crucible 12 located below the flow guide cylinder 11. The secondary chamber 2 is provided with a weight 21. The weight 21 is connected to a seed crystal rotation and lifting mechanism 22 via a steel wire rope 24. The seed crystal rotation and lifting mechanism 22 drives the weight 21 to move relative to each other in the vertical direction. A silicon slag impacting device 23 is connected to the bottom of the weight 21. The orthographic projection of the silicon slag impacting device 23 does not overlap with the orthographic projection of the flow guide cylinder 11.

[0047] Specifically, continue to refer to Figure 2As shown, the single crystal furnace includes a main chamber 1 and a secondary chamber 2, which are connected. A crucible 12, which can be a quartz crucible, is installed in the main chamber 1. The crucible 12 contains molten silicon. A guide tube 11 with openings at the top and bottom is installed in the furnace chamber at the upper end of the crucible 12. The guide tube 11 can guide the flow of high-temperature gas, allowing the airflow of inert gas (such as argon) to pass through the guide tube 11 from top to bottom and be introduced into the interior of the thermal field. This carries away the SiO above the silicon solution and cools the single crystal silicon, increasing its longitudinal temperature gradient and enabling the single crystal to grow rapidly.

[0048] Continue to refer to Figure 2 As shown, the auxiliary chamber 2 contains a weight 21, which is connected to the seed crystal rotation and lifting mechanism 22 via a steel wire rope 24. The seed crystal rotation and lifting mechanism 22 drives the weight 21 to move vertically relative to the crucible 12, and can also drive the weight 21 to move circumferentially. A silicon slag impacting device 23 is installed at the bottom of the weight 21. The material of the silicon slag impacting device 23 can be the same as that of the crucible 12, such as quartz. When the silicon slag impacting device 23 is made of quartz, it has the characteristics of high purity and high temperature resistance. Due to the high purity requirement, it will not contaminate the silicon slag 3, which is beneficial for the reuse of the silicon slag 3. The orthographic projection of the silicon slag impacting device 23 does not overlap with the orthographic projection of the guide tube 11, which is beneficial for the silicon slag impacting device 23. The silicon slag 3 moves downward inside the guide tube 11, eventually being lifted into the molten silicon in the crucible 12. Optionally, the orthographic projection of the part of the silicon slag impact device 23 that penetrates the guide tube 11 does not overlap with the orthographic projection of the guide tube 11, such as the lower middle part of the silicon slag impact device 23. This can also be understood as the inner diameter of the bottom of the guide tube 11 being larger than the outer diameter of the silicon slag impact device 23. With the silicon slag impact device 23 penetrating the guide tube 11, when the crystal rod explodes and silicon slag 3 remains at the bottom of the guide tube 11, the seed crystal rotation and lifting mechanism 22 drives the silicon slag impact device 23 to move downward in the vertical direction through the weight 21, so that the silicon slag impact device 23 impacts the remaining silicon slag 3 at the bottom of the guide tube 11, causing the remaining silicon slag 3 to fall into the crucible 12.

[0049] As can be seen from the above embodiments, the single crystal furnace provided in this embodiment achieves at least the following beneficial effects:

[0050] The single crystal furnace provided in this embodiment includes a main chamber 1 and a secondary chamber 2 connected to the main chamber 1. The main chamber 1 contains a flow guide cylinder 11 and a crucible 12 located below the flow guide cylinder 11. The secondary chamber 2 contains a weight 21, which is connected to a seed crystal rotation and lifting mechanism 22 via a steel wire rope 24. The seed crystal rotation and lifting mechanism 22 drives the weight 21 to move vertically relative to the flow guide cylinder 11. A silicon slag impact device 23 is connected to the bottom of the weight 21. The orthographic projection of the silicon slag impact device 23 does not overlap with the orthographic projection of the flow guide cylinder 11. Using this design, when the crystal rod explodes and silicon slag 3 remains at the bottom of the flow guide cylinder 11, [the solution is to prevent this]. The seed crystal rotation and lifting mechanism 22 drives the silicon slag impact device 23 to move vertically downward through the hammer 21. This causes the silicon slag impact device 23 to impact the residual silicon slag 3 located at the bottom of the guide tube 11, causing the residual silicon slag 3 to fall into the crucible 12. Thus, the residual silicon slag after the rod explodes does not need to be removed from the guide tube by heating, thereby avoiding the risk of the guide tube 11 directly contacting the high-temperature silicon liquid in the crucible 12 below. If the guide tube 11 is damaged, since the guide tube does not need to directly contact the high-temperature silicon liquid in the crucible 12 below, the service life of the guide tube can be extended, and the processing efficiency can be effectively improved.

[0051] In one alternative embodiment, Figure 3 This is a schematic diagram of the structure of a hammer and silicon slag impact device provided by the present invention; Figure 4 yes Figure 3 Enlarged view at point A; refer to Figure 3 and Figure 4 As shown, the hammer 21 and the silicon slag impact device 23 are detachably connected. When the hammer 21 and the silicon slag impact device 23 are detachably connected, the hammer 21 and the silicon slag impact device 23 need to be assembled only when the crystal rod explodes and silicon slag 3 remains at the bottom of the guide tube 11, so as to impact the silicon slag 3 remaining at the bottom of the guide tube 11. After cleaning the silicon slag 3 remaining at the bottom of the guide tube 11, the silicon slag impact device 23 can be directly removed without affecting the subsequent crystal pulling in the single crystal furnace.

[0052] In an alternative embodiment, in conjunction with reference to Figure 3 and Figure 4 As shown, the hammer 21 is threadedly connected to the silicon slag impacting device 23. When the hammer 21 and the silicon slag impacting device 23 are threadedly connected, it has the advantages of simple structure, reliable connection, and easy disassembly and assembly. At the same time, it has good stability and can withstand large tensile and torque forces. For example, a bolt 210 is provided on the side of the hammer 21 near the silicon slag impacting device 23, and an internal thread 230 that mates with the bolt 210 is provided on the side of the silicon slag impacting device 23 near the hammer 21. The bolt 210 and the internal thread 230 are threadedly connected.

[0053] In an alternative embodiment, continue to refer to Figure 2As shown, the silicon slag impact device 23 is cylindrical. Since the guide tube 11 can be bowl-shaped, designing the silicon slag impact device 23 as a cylinder increases the contact area between the bottom area of ​​the cylinder and the residual silicon slag 3. When the seed crystal rotation lifting device drives the silicon slag impact device 23 to move downward, it can be driven.

[0054] In an alternative embodiment, continue to refer to Figure 2 As shown, the diameter of the silicon slag impact device 23 ranges from 220mm to 250mm, and the length of the silicon slag impact device 23 along the first direction X ranges from 1000mm to 1500mm. The first direction X can be the direction from the weight 21 to the silicon slag impact device 23.

[0055] Specifically, in combination Figure 2 and Figure 3 As shown, when the diameter of the silicon slag impacting device 23 is less than 220mm, the bottom area of ​​the silicon slag impacting device 23 is small, and it is impossible to completely remove the silicon slag 3 remaining at the bottom of the guide tube 11. When the diameter of the silicon slag impacting device 23 is greater than 250mm, it is not conducive to the silicon slag impacting device 23 penetrating the guide tube 11, so it is impossible to knock off the residual silicon slag 3 at the bottom of the guide tube 11 through the silicon slag impacting device 23. Therefore, the diameter range of the silicon slag impacting device 23 is designed to be 220mm to 250mm, preferably 230mm to 240mm. This not only maximizes the bottom area of ​​the silicon slag impacting device 23, thereby effectively removing the residual silicon slag 3 at the bottom of the guide tube 11, but also facilitates the silicon slag impacting device 23 penetrating the guide tube 11, thereby knocking off the residual silicon slag 3 at the bottom of the guide tube 11 through the silicon slag impacting device 23. The diameter of the silicon slag impacting device 23 can be 220mm, 230mm, 240mm or 250mm.

[0056] Continue to refer to Figure 2 As shown, on the one hand, when the length of the silicon slag impacting device 23 along the first direction X is less than 1000mm, the length of the silicon slag impacting device 23 is too short, which is not conducive to the silicon slag impacting device 23 knocking off the residual silicon slag 3 at the bottom of the guide tube 11; on the other hand, when the length of the silicon slag impacting device 23 along the first direction X is greater than 1500mm, the length of the silicon slag impacting device 23 is too long, which is not conducive to the operator assembling the hammer 21 with the silicon slag impacting device 23. Therefore, designing the length range of the silicon slag impacting device 23 along the first direction X to be between 1000mm and 1500mm can not only prevent the length of the silicon slag impacting device 23 from being too short, which is conducive to the silicon slag impacting device 23 knocking off the residual silicon slag 3 at the bottom of the guide tube 11, but also avoid the length of the silicon slag impacting device 23 from being too long, which is conducive to the operator assembling the hammer 21 with the silicon slag impacting device 23. Specifically, the length of the silicon slag impact device 23 along the first direction X can be 1000mm, 1100mm, 1200mm, 1300mm, 1400mm or 1500mm.

[0057] In one alternative embodiment, Figure 5 This is a schematic diagram of the structure of another hammer and silicon slag impact device provided by the present invention; Figure 6 This is a schematic diagram of another hammer and silicon slag impact device provided by the present invention; see also Figure 5 and Figure 6 As shown, the silicon slag impact device 23 includes a first part 231 and a second part 232 connected to the first part 231. The first part 231 is located on the side away from the hammer 21, and the second part 232 is located on the side close to the hammer 21. The first part 231 is cylindrical in shape, and the second part 232 is rectangular, trapezoidal or fan-shaped.

[0058] Specifically, the silicon slag impact device 23 includes a first part 231 and a second part 232. The first part 231 is fixedly connected to the side of the hammer 21 near the hammer 21 and the second part 232 is fixedly connected to the side of the hammer 21 away from the hammer 21. The side of the second part 232 near the hammer 21 is connected to the side of the hammer 21 near the silicon slag impact device 23. The shape of the first part 231 can be cylindrical. Since the shape of the guide tube 11 can be bowl-shaped, designing the silicon slag impact device 23 as a cylinder increases the contact area between the bottom area of ​​the cylinder and the residual silicon slag 3. When the seed crystal rotation lifting device drives the silicon slag impact device 23 to move downward, the first part 231 directly knocks the silicon slag 3 at the bottom of the guide tube 11 into the silicon solution in the crucible 12. The shape of the second part 232 can be cylindrical, rectangular, trapezoidal, or fan-shaped. Since the second part 232 does not need to penetrate the guide tube 11, as long as the hammer 21 can be connected to the second part 232, the shape of the second part 232 is not limited.

[0059] Optionally, continue to refer to Figure 5 and Figure 6 As shown, along the first direction X, the cross-section of the second part 232 is smaller than the cross-section of the first part 231. This can save materials and reduce the manufacturing cost of the silicon slag impact device 23. The first direction X can be the direction from the hammer 21 to the silicon slag impact device 23.

[0060] As can be seen from the above embodiments, the method for treating residual silicon slag after blasting and the single crystal furnace provided by the present invention achieve at least the following beneficial effects:

[0061] This invention provides a method for treating residual silicon slag after crystal rod explosion and a single crystal furnace. The method involves treating the residual silicon slag using a single crystal furnace. The single crystal furnace includes a flow guide cylinder and a crucible located in the main chamber, and a weight located in the secondary chamber. The main chamber and the secondary chamber are connected. The flow guide cylinder is located above the crucible. The weight is connected to a seed crystal rotation and lifting mechanism, which drives the weight to move vertically relative to the crystal rod. A silicon slag impact device is connected to the bottom of the weight. The method includes the following steps: after the crystal rod explodes, opening the secondary chamber to lift and remove the remaining crystal rod; and assembling the silicon slag impact device onto the weight. The silicon slag impactor is hoisted into the auxiliary chamber. The seed crystal rotation and lifting mechanism drives the silicon slag impactor to move vertically relative to the chamber via a counterweight. This causes the silicon slag impactor to knock down the silicon slag and fall into the crucible below the guide tube. Using this method, through the mechanical force of gravity, such as the seed crystal rotation and lifting mechanism driving the silicon slag impactor to move vertically downward, the residual silicon slag after the rod explosion is removed from the guide tube and falls into the molten silicon in the crucible below. Thus, the residual silicon slag after the rod explosion does not need to be removed from the guide tube by heating, thereby avoiding the risk of the guide tube directly contacting the high-temperature molten silicon below, and effectively improving the processing efficiency.

[0062] While specific embodiments of the invention have been described in detail by way of examples, those skilled in the art should understand that the examples are for illustrative purposes only and not intended to limit the scope of the invention. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims

1. A method for treating residual silicon slag after frying rods, characterized in that, A single-crystal furnace is used to process silicon slag. The single-crystal furnace includes a flow guide cylinder and a crucible located in the main chamber, and a weight located in the auxiliary chamber. The main chamber and the auxiliary chamber are connected. The flow guide cylinder is located above the crucible. The weight is connected to a seed crystal rotation and lifting mechanism, which drives the weight to move relative to the furnace in the vertical direction. A silicon slag impact device is connected to the bottom of the weight. The orthographic projection of the silicon slag impact device does not overlap with the orthographic projection of the flow guide cylinder. The inner diameter of the bottommost part of the flow guide cylinder is larger than the outer diameter of the silicon slag impact device. Includes the following steps: After the crystal rod explodes, the sub-chamber is opened and the remaining crystal rods are lifted out of the sub-chamber and removed. The silicon slag impact device is mounted on the heavy hammer; The silicon slag impact device is hoisted into the secondary chamber. The seed crystal rotation and lifting mechanism uses the hammer to make the silicon slag impact device move downward in the vertical direction, so that the silicon slag impact device knocks down the silicon slag at the bottom of the guide tube and falls into the crucible.

2. The method for treating residual silicon slag after frying rods according to claim 1, characterized in that, Also includes: After removing the silicon slag, the silicon slag removal device is rotated out of the auxiliary chamber by the seed crystal rotation lifting mechanism, and then removed after cooling.

3. A single crystal furnace, characterized in that, The device includes a main chamber and a secondary chamber connected to the main chamber. The main chamber contains a guide tube and a crucible located below the guide tube. The secondary chamber contains a weight, which is connected to a seed crystal rotation and lifting mechanism via a steel wire rope. The seed crystal rotation and lifting mechanism drives the weight to move relative to the main chamber in a vertical direction. A silicon slag impact device is connected to the bottom of the weight. The orthographic projection of the silicon slag impact device does not overlap with the orthographic projection of the guide tube. The inner diameter of the bottom of the guide tube is larger than the outer diameter of the silicon slag impact device.

4. The single crystal furnace according to claim 3, characterized in that, The hammer is detachably connected to the silicon slag impact device.

5. The single crystal furnace according to claim 4, characterized in that, The hammer is threadedly connected to the silicon slag impact device.

6. The single crystal furnace according to claim 5, characterized in that, The hammer is provided with a bolt on the side near the silicon slag impact device, and the silicon slag impact device is provided with an internal thread that mates with the bolt on the side near the hammer. The bolt is threadedly connected to the internal thread.

7. The single crystal furnace according to claim 3, characterized in that, The silicon slag impact device is cylindrical in shape.

8. The single crystal furnace according to claim 7, characterized in that, The diameter of the silicon slag impact device ranges from 220mm to 250mm, and the length of the silicon slag impact device ranges from 1000mm to 1500mm.

9. The single crystal furnace according to claim 3, characterized in that, The silicon slag impact device includes a first part and a second part connected to the first part. The first part is located on the side away from the hammer, and the second part is located on the side close to the hammer. The first part is cylindrical in shape, and the second part is cylindrical, rectangular, trapezoidal, or sector-shaped.

10. The single crystal furnace according to claim 3, characterized in that, The material of the silicon slag impact device is quartz.

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