Reaction by-product capture devices for capturing available areas by inducing air flow expansion

Abstract

The present invention relates to a reaction by-product capturing device capable of expanding a usable capturing area by inducing a gas flow, characterized in that: by dividing an internal capturing tower of a capturing device for capturing reaction by-products contained in a gas discharged from a process chamber in a semiconductor manufacturing process into a plurality of stages, a capturing reaction is performed while a flowed-in gas flow is induced to a lower portion of an inner area of a middle capturing portion composed of a space portion and discharged to an outer area in a first half of a use period according to a reaction by-product capturing amount, and after flowing to the outer area from an upper portion of the inner area of the middle capturing portion in a second half of the use period in which the capturing amount increases and a usable capturing area decreases, the gas flow is induced to a next step and a supplementary capturing reaction is performed, so that a capturing device capable of performing a supplementary reaction by-product capturing by expanding a usable capturing area.

Description

Technical Field

[0001] This invention relates to a reaction byproduct capture device that can expand the capture area by inducing airflow, and more particularly to a capture device that can induce gas discharged from the process chamber in semiconductor manufacturing processes to the inner region of the inner capture tower during the first half of the usage cycle and capture reaction byproducts, and induce the gas to the outer region of the inner capture tower during the second half of the usage cycle when the capture amount increases and the available capture area decreases, thereby expanding the capture area and improving the capture efficiency. Background Technology

[0002] Generally speaking, semiconductor manufacturing engineering mainly includes front-end engineering (Fabrication engineering) and back-end engineering (Assembly engineering). Front-end engineering refers to the process of selectively etching the deposited thin film on the wafer by repeatedly performing the process in various process chambers to process a specific pattern and thereby manufacture a semiconductor chip. Back-end engineering refers to the process of assembling the chip manufactured in the front-end engineering into a finished product by separating the chip individually and combining it with a lead frame.

[0003] At this point, the aforementioned process of depositing a thin film on the wafer or etching the thin film deposited on the wafer is performed by injecting the required gas, such as the precursor gas used for thin film deposition, into the process chamber through a gas injection system and executing the process under high temperature conditions. During this process, a large amount of harmful gases containing various reaction byproducts not used in the deposition process, unreacted flammable gases, corrosive foreign matter, and toxic components are generated inside the process chamber and are discharged as exhaust gases.

[0004] Therefore, in semiconductor manufacturing equipment, a reaction byproduct capture device is installed to capture reaction byproducts contained in the exhaust gas discharged from the process chamber. After capturing the reaction byproducts contained in the exhaust gas, the unreacted gas is finally purified in a scrubber located on the exhaust line and then discharged into the atmosphere.

[0005] Furthermore, during the use of the reaction byproduct capture device, when the reaction byproducts are captured in the internal capture tower, the reaction byproducts will mainly adhere to or accumulate between the outer shell and the outer side of the capture plate of the internal capture tower, resulting in a sharp decrease in capture efficiency.

[0006] In cases where the efficiency of the reaction byproduct capture device decreases as described above, in order to smoothly carry out semiconductor manufacturing processes, it is necessary to replace it with a new reaction byproduct capture device, or to clean the internal capture tower and the interior of the outer casing of the reaction byproduct capture device to replace it with a regenerated capture device.

[0007] However, even with the decreased capture efficiency of the capture device as described above, there is still an area inside the internal capture tower where additional capture can be performed. Replacing the capture device without fully utilizing the available capture area as described above would result in a shorter service life and higher semiconductor manufacturing unit price.

[0008] Therefore, there is a need for a technology that can extend the lifespan of a capture device by making full use of the usable capture area of ​​the capture device, but so far there is no such technology.

[0009] Prior technology documents

[0010] Patent documents

[0011] (Patent Document 1) Korean Patent Registration No. 10-0717837 (Registered on May 7, 2007)

[0012] (Patent Document 2) Korean Patent Registration No. 10-0862684 (Registered on October 2, 2008)

[0013] (Patent Document 3) Korean Patent Registration No. 10-1447629 (Registered on September 29, 2014)

[0014] (Patent Document 4) Korean Patent Registration No. 10-1806480 (Registered on December 1, 2017) Summary of the Invention

[0015] Technical issues

[0016] In order to solve the existing problems as described above, the object of the present invention is to provide a capture device that divides the internal capture tower of a capture apparatus for capturing reaction byproducts contained in a gas discharged from a process chamber in a semiconductor manufacturing process into multiple sections, thereby performing a capture reaction while inducing the incoming gas flow to the lower part of the inner region of a middle capture section consisting of a space section according to the amount of reaction byproducts captured in the first half of the use cycle and then discharging it to the outer region, and in the second half of the use cycle when the amount of capture increases and the available capture area decreases, flowing from the upper part of the inner region of the middle capture section to the outer region and then inducing it to the next direction to perform an additional capture reaction, thereby performing additional capture of reaction byproducts by expanding the available capture area.

[0017] Another object of the present invention is to provide a method for performing capture in the middle capture section of an internal capture tower that is divided into multiple segments, by arranging multiple planar cross-shaped vertical plates at certain intervals along the outer periphery into a quadrilateral and equipping a planar inner cross-shaped vertical plate in the lower center of the inner region. Each planar cross-shaped vertical plate constituting the outer periphery is formed in a shape where the inner region on the upper side has a relatively larger area and the outer region on the lower side has a relatively larger area. This expands the usable capture area and performs capture by forming a capture space in which the lower space of the inner region is larger than the upper space.

[0018] Another object of the present invention is to provide a capture device that induces the incoming airflow to flow rapidly downwards without resistance along the plane of a planar cross-shaped vertical plate, thereby accumulating in the inner region space after performing a capture reaction in the inner side and the inner planar cross-shaped vertical plate during the first half of the usage cycle, and then allows the airflow to flow from the upper part of the inner region of the planar cross-shaped vertical plate to the outer region during the second half of the usage cycle, and then descends along the outer side to perform an additional capture reaction, thereby expanding the usable capture area and performing the capture reaction.

[0019] Another object of the present invention is to provide a method in which gas discharged from the middle section of an internally segmented trapping tower in the outward direction flows to the lower section trapping section, and is equipped with a vortex plate installed in multiple segments in the vertical direction along the lower outer periphery of the outer side of the middle section trapping section. This reduces the flow velocity of the gas that is discharged to the outside of the middle section trapping section and then flows downward during use, while forming a vortex and thereby increasing the trapping reaction time, thereby preventing the trapped and accumulated reaction byproducts from flowing downward.

[0020] Problem-solving methods

[0021] To achieve the aforementioned objectives and address the problems existing in the prior art, the present invention provides a reaction byproduct capture device that can expand the capture area by inducing airflow. The device is characterized by: containing the gas discharged after deposition in a semiconductor manufacturing process within a housing and heating it with a heater, while simultaneously capturing the reaction byproducts contained in the gas using an internal capture tower and discharging only the gas.

[0022] The internal capture tower is divided into an upper capture section that performs the capture reaction while guiding the main gas flow to the central part and causing it to descend; a middle capture section that uses a space to form an inner region for containing the incoming gas and capturing reaction byproducts; and a lower capture section that performs multi-stage capture of reaction byproducts from the gas flowing in from the side while preventing the captured reaction byproducts from flowing out to the gas outlet of the outer shell, thereby achieving multi-stage capture of reaction byproducts at different heights.

[0023] According to the capture amount changes in different usage cycles, in the first half of the usage cycle, the main gas flow of the induced gas descends to the inner region of the planar cross-shaped vertical plate that forms the outer periphery and flows to the outer region. In the second half of the usage cycle, when a certain amount of capture is accumulated in the inner region, it is induced to flow from the upper part of the inner region of the planar cross-shaped vertical plate to the outer region and then descend, thereby performing an additional capture reaction.

[0024] In a preferred embodiment, the present invention is characterized in that: the upper section capturing section induces the gas distributed from the heater to the inner outer contour direction of the shell and descending through the main gas hole in the center and the relatively small auxiliary gas holes arranged in a circle around the main gas hole to the middle section capturing section at a certain interval in the lower part, and captures the reaction byproducts in the gas on the upper surface where the triangular plate and the cross-shaped plate are installed and on the lower surface where the rectangular plate is installed.

[0025] In a preferred embodiment, the present invention is characterized in that: on the upper surface of the upper capturing section, there are radially arranged triangular plates that pierce through multiple circular auxiliary air holes and protrude in an inclination that gradually increases from the outer contour to the main air hole; between each triangular plate, there are radially arranged cross-shaped plates that pierce through the auxiliary air holes and protrude vertically, thereby inducing airflow and forming vortices to improve capturing efficiency; and on the lower surface, there are radially arranged rectangular plates that pierce through the auxiliary air holes and protrude vertically, thereby performing capturing while inducing the exhaust gas to descend uniformly through the main air hole and auxiliary air holes.

[0026] As a preferred embodiment, the present invention is characterized in that: the middle capturing section is formed by a plurality of planar cross-shaped vertical plates arranged at a certain interval to the lower part of the upper capturing section to form an outer periphery, and a planar inner cross-shaped vertical plate is provided in the lower center of the inner side region of the cross-shaped vertical plates forming the outer periphery.

[0027] As a preferred embodiment, the present invention is characterized in that: at the lower part of the planar cross-shaped vertical plate and the inner cross-shaped vertical plate, an exhaust plate with multiple air holes is provided for discharging gas flowing into the lower part of the inner region to the outer region.

[0028] As a preferred embodiment, the present invention is characterized in that: the planar cross-shaped vertical plate is formed in a shape in which the area protruding inward from the upper side is relatively large and the area protruding outward from the lower side is relatively large, thereby forming a capture space in which the lower space of the inner region is larger than the upper space.

[0029] As a preferred embodiment, the present invention is characterized in that: a vortex plate with a plurality of air holes is installed along the outer periphery in the lower part of the outer region of the planar cross-shaped vertical plate.

[0030] As a preferred embodiment, the present invention is characterized in that: the vortex plate is installed in multiple segments in the vertical direction, and the vortex plate formed in the lower segment is relatively large and is formed in an inclined shape with a relatively high outer side.

[0031] As a preferred embodiment, the present invention is characterized in that: the lower section capturing part is combined with the lower part of the middle section capturing part and is composed of an outer contour capturing plate part, a middle capturing plate part and an inner side capturing plate part having multiple air holes formed on the surface, thereby preventing the gas after the capturing reaction is performed in the inner and outer regions of the middle section capturing part from directly falling down and flowing into the gas outlet formed in the lower plate of the outer shell, and after the gas is induced from the outer contour to the inner side and the final capturing reaction is performed, it flows into the upper part of the gas outlet protruding from the center of the lower plate of the outer shell and falls down.

[0032] As a preferred embodiment, the present invention is characterized in that: the outer contour capturing plate portion is configured with an open lower part, a plurality of air holes are formed in the upper side capturing plate and each side capturing plate, and a plurality of vortex forming plates are arranged in multiple segments along the outer periphery of the outer side, forming an inclined angle that gradually rises from the outside to the upper part.

[0033] As a preferred embodiment, the present invention is characterized in that: the intermediate capturing plate portion is configured with an open lower part, and is spaced at a certain distance from the upper side of the outer contour capturing plate portion by a spacer material, the upper side capturing plate is configured with a closed structure and multiple air holes are formed on each side capturing plate.

[0034] As a preferred embodiment, the present invention is characterized in that: the inner capturing plate portion is formed and fixed to the middle capturing plate portion by a structure that is open at the lower and upper parts, and a plurality of air holes are formed on each side capturing plate.

[0035] As a preferred embodiment, the present invention is characterized in that: multiple filter plates are arranged at certain intervals in the housing, protruding obliquely along the outer periphery of the gas outlet protruding from the upper part of the downward plate, for forming vortices in the rising gas.

[0036] Invention Effects

[0037] The reaction byproduct capture device of the present invention, which expands the usable capture area by inducing airflow, as described above, can be used by dividing an internal capture tower installed inside the reaction byproduct capture device into an upper capture section, a middle capture section, and a lower capture section. In the first half of the usage cycle, the airflow that is discharged from the process cavity in the semiconductor manufacturing process and flows into the capture device after the deposition process is performed flows into the lower part of the inner central part of the middle capture section, which is composed of a space section, and then flows outward. Unreacted reaction byproducts contained in the gas are captured and accumulated in the inner region of the cross-shaped vertical plate. In the second half of the usage cycle, the reaction byproducts captured in the inner region gradually accumulate as the capture reaction time increases, causing the usable capture area to decrease. The airflow that is induced to flow in flows from the upper part of the middle capture section to the outside and then flows downward along the outer region of the planar cross-shaped vertical plate to perform additional capture. Thus, reaction byproduct capture is additionally performed by expanding the usable capture area.

[0038] Furthermore, the present invention can perform capture by arranging multiple planar cross-shaped vertical plates at certain intervals along the outer periphery into a quadrilateral, and equipping the lower center of the inner region with a planar inner cross-shaped vertical plate. In the state where the planar cross-shaped vertical plates constituting the outer periphery form a capture space with a relatively large inner area on the upper side and a relatively large outer area on the lower side, the incoming airflow can flow rapidly downwards along the plane without resistance. Thus, in the first half of the usage cycle, after the capture reaction is performed in the inner region of the square meter installed cross-shaped vertical plates and the inner cross-shaped vertical plate, the gas accumulates in the inner space. In the second half of the usage cycle, the gas descends along the outer surface of the planar cross-shaped vertical plates and performs an additional capture reaction, thereby expanding the usable capture area and performing the capture reaction.

[0039] Furthermore, the present invention enables gas discharged from the middle section of the internal capture tower constituting the reaction byproduct capture device to flow to the lower section capture section, and is equipped with a vortex plate installed in multiple segments along the lower outer periphery of the middle section capture section. This reduces the flow velocity of the gas that is discharged to the outside of the middle section capture section and then descends to the lower part during use, thereby forming a vortex and increasing the capture reaction time. Moreover, the capture reaction can be performed while preventing the reaction byproducts from flowing out.

[0040] Furthermore, the present invention allows the gas flow into the upper section of the internal capture tower constituting the reaction byproduct capture device to flow into the middle section of the capture section through the main gas hole. In order to ensure that the gas flow that descends after being distributed from the heater to the outer contour can flow smoothly from the outer contour of the upper section of the capture section into the central section, a triangular plate shape is adopted with an inclination angle that gradually rises from the outer contour to the center. This allows the capture reaction to be performed while inducing the gas flow. Moreover, the rectangular plate formed on the lower surface can be used to induce the gas through the auxiliary gas holes formed around the main gas hole to the lower direction and perform the capture reaction again.

[0041] Furthermore, the present invention can perform multi-stage capture reaction and place the captured reaction byproducts out as the gas discharged from the middle section of the internal capture tower constituting the reaction byproduct capture device passes through the lower section which is divided into multiple sections, thereby ensuring that only gas is discharged to the outlet.

[0042] Furthermore, the present invention can prevent the discharge of reaction byproducts captured during the passage of multiple lower capture sections by equipping multiple filter plates protruding in an oblique direction along the outer periphery of the discharge port.

[0043] As described above, this invention is a useful invention with multiple effects and has good prospects for industrial application. Attached Figure Description

[0044] Figure 1 This is a cross-sectional view illustrating the internal structure of a reaction byproduct capture device to which one embodiment of the present invention is applied.

[0045] Figure 2 This is a front view illustrating the overall structure of the internal capture tower when it is assembled according to one embodiment of the present invention.

[0046] Figure 3 This is a plan view of an internal capture tower to which one embodiment of the present invention is applied.

[0047] Figure 4 This is a partially exploded perspective view of the internal capture tower of one embodiment of the present invention.

[0048] Figure 5 This is a partially exploded perspective view taken from the lower part of the internal capture tower, according to one embodiment of the present invention.

[0049] Figure 6 This is a perspective view of the middle section capturing part according to one embodiment of the present invention.

[0050] Figure 7 This is a bottom view of the mid-section capturing section according to one embodiment of the present invention.

[0051] Figure 8This is a perspective view of the lower segment capturing part according to one embodiment of the present invention.

[0052] Figure 9 This is a bottom view of the lower segment capturing section according to one embodiment of the present invention.

[0053] Figure 10 This is a schematic diagram illustrating the airflow during the first half of the usage cycle inside a capture device according to one embodiment of the present invention.

[0054] Figure 11 This is a schematic diagram illustrating the capture tendency during the first half of the usage cycle inside a capture device according to one embodiment of the present invention.

[0055] Figure 12 This is a schematic diagram illustrating the airflow during the latter half of the usage cycle inside a capture device according to one embodiment of the present invention.

[0056] Figure 13 This is a schematic diagram illustrating the airflow in the latter half of a cycle inside a capture device to which one embodiment of the present invention is applied.

[0057] (Explanation of reference numerals in the attached diagram)

[0058] 1: Outer casing 2: Heater

[0059] 2a: Radiator; 3: Internal capture tower

[0060] 10a: Wall panel; 11: Main body of the outer shell

[0061] 12: Upper plate 12a: Gas inlet

[0062] 13: Lower plate 13a: Gas outlet

[0063] 13b: Filter plate; 21: Power supply section

[0064] 31: Upper capture section; 32: Middle capture section

[0065] 33: Lower section capture unit; 311: Main air vent.

[0066] 312: Auxiliary vent; 313: Triangular plate

[0067] 314: Cross-shaped plate; 315: Quadrilateral plate

[0068] 316: Spacer material; 317: Support component

[0069] 321: Cross-shaped vertical plate; 322: Internal cross-shaped vertical plate

[0070] 323: Exhaust plate; 323a: Vent hole

[0071] 324: Vortex plate; 331: Outer contour capture plate section

[0072] 331a: Vortex forming plate; 332: Intermediate capturing plate.

[0073] 332a: Spacer material; 333: Inner capture plate section

[0074] 334: Support plate Detailed Implementation

[0075] Next, the structure and function of embodiments to which the present invention applies will be described in detail with reference to the accompanying drawings. Furthermore, in the process of describing the present invention, when it is determined that a detailed description of a related well-known function or structure may obscure the essence of the invention, such detailed description will be omitted.

[0076] Figure 1 This is a cross-sectional view illustrating the internal structure of a reaction byproduct capture device according to one embodiment of the present invention. Figure 2 This is a front view illustrating the overall structure of the internal capture tower when it is assembled according to one embodiment of the present invention. Figure 3 This is a plan view of an internal capture tower applicable to one embodiment of the present invention. Figure 4 This is a partially exploded perspective view of the internal capture tower according to one embodiment of the present invention. Figure 5 This is a partially exploded perspective view taken from the lower part of the internal capture tower according to one embodiment of the present invention. Figure 6 This is a perspective view of the middle section capturing part according to one embodiment of the present invention. Figure 7 This is a bottom view of the mid-section capturing section according to one embodiment of the present invention. Figure 8 This is a perspective view of the lower segment capturing part according to one embodiment of the present invention. Figure 9 This is a bottom view of the lower segment capturing section according to one embodiment of the present invention.

[0077] As shown in the figure, the reaction byproduct capture device to which the present invention can expand the capture area by inducing airflow is a device for capturing reaction byproducts contained in unreacted gas discharged after performing a thin film deposition process in a process chamber (not shown) and then discharging only the remaining gas to the rear end of the capture device.

[0078] The reaction byproduct capture device comprises: a housing 1 for containing and venting the gas discharged after the deposition process in the semiconductor manufacturing process; a heater 2 for heating the gas contained inside the housing; and an internal capture tower 3, which, according to height, is divided into an upper capture section 31 that performs the capture reaction while guiding the main gas flow to the central part and causing it to descend, a middle capture section 32 that adopts a structure that forms an inner region using a space portion to contain the incoming gas and capture the reaction byproducts, and a lower capture section 33 that performs the multi-stage capture of reaction byproducts from the gas flowing in from the side while preventing the captured reaction byproducts from flowing out to the gas outlet of the housing, thereby performing multi-stage capture of reaction byproducts at different heights.

[0079] In particular, the middle section of the internal capture tower 32 varies according to the capture amount in different usage cycles. In the first half of the usage cycle, the main flow of the induced gas descends to the inner region of the planar cross-shaped vertical plate 321 that forms the outer periphery and flows to the outer region. In the second half of the usage cycle, the induced gas flows from the upper part of the inner region to the outer region of the planar cross-shaped vertical plate 321 and then descends, thereby performing an additional capture reaction.

[0080] As one embodiment of the deposition process, it can be a TiN deposition process in which TiCl4 and NH3 gases are injected into the process chamber. However, the present invention is not limited to the capture device used in deposition processes utilizing TiCl4 and NH3 gases, and can also capture reaction byproducts contained in various gases discharged after being supplied to the process chamber in various semiconductor manufacturing processes.

[0081] Next, each component will be described in detail.

[0082] The outer casing 1 is a vertical structure in which gas discharged from the process chamber flows in from the top, is contained therein, and then discharges to the bottom. It includes: an outer casing body 11 for containing the inflowing gas; an upper plate 12 for having a gas inlet 12a protruding in the upward direction; and a lower plate 13 for having gas outlets 13a protruding in the upward and lower directions.

[0083] Furthermore, as illustrated in the accompanying drawings, the housing may also include support legs and casters for movement on the lower part of the lower plate, as needed.

[0084] Regarding the shape of the outer shell body 11, in one embodiment of the present invention, it is described based on a quadrilateral cylindrical shape according to the shape of the internal capture tower. However, the present invention is not limited to the shape described above, and can also be constructed in any desired shape such as a cylindrical shape or a polygonal cylindrical shape.

[0085] In each inner wall of the outer casing 11, a plurality of wall panels 10a are arranged at certain intervals along the vertical direction and installed along the horizontal direction. The wall panels 10a can capture reaction byproducts while forming vortices in the gas passing through the interior of the casing 1 and thereby increasing the time the gas remains in the interior space of the casing.

[0086] As the cross-sectional shape of the wall panel 10a, in one embodiment, it can be formed as a flat plate with a horizontal shape. However, in addition to the shape described above, it can also be formed by bending the end towards the interior side upwards or downwards to form an inclined surface or rounded corners. The wall panel with the shape described above can create resistance to the descending airflow, thereby capturing reaction byproducts while increasing the time spent in the interior space by creating vortices through differences in direction and velocity.

[0087] The gas outlet 13a protrudes above the lower plate 13, and multiple filter plates 13b protruding obliquely can be arranged at certain intervals along the outer periphery. By forming the filter plates 13b in the manner described above, the gas flowing upward along the wall of the gas outlet 13a can collide and form vortices, thereby preventing the gas passing through the multiple lower capture sections from flowing directly into the inside of the gas outlet and delaying the discharge time to the maximum extent, while also preventing the captured reaction byproducts from mixing with the gas and being discharged together.

[0088] The heater 2 is a device for uniformly distributing gas by heating the gas flowing into the housing to form a temperature zone in the upper part of the housing that cannot be captured and to prevent blockage due to the accumulation of by-products in the upper part of the housing and the gas inlet 12a during the initial use. A radiator 2a is formed radially on the upper side so that the heated gas can be evenly distributed.

[0089] In addition, a heater power supply unit 21 is installed on the upper plate 12 of the housing for supplying power to the heater 2 and controlling the power supply according to the internal temperature of the housing.

[0090] The internal capture tower 3 is configured to capture gas flowing into the shell in multiple stages by dividing the capture area into an upper capture section 31, a middle capture section 32 and a lower capture section 33 according to the height. In particular, the middle capture section can change the main gas flow from the inner area to the outer area according to the capture volume changes in different usage cycles, thereby expanding the usable capture area and maximizing the overall capture efficiency.

[0091] The upper section capture unit 31 can guide the gas distributed from the heater to the inner outer contour direction of the shell and descending through the main gas hole 311 in the center and the relatively small auxiliary gas holes 312 arranged in a circle around the main gas hole to the middle section capture unit 32 at a certain distance in the lower part, and capture the reaction byproducts in the gas through the capture plates installed on the upper and lower surfaces respectively by embedding or welding.

[0092] Specifically, the upper capturing section 31 is composed of a quadrilateral flat plate and is formed with a size slightly smaller than the interior of the upper part of the main body of the outer shell. This prevents the gas distributed from the heater 2 located at the top to the outer contour of the interior space of the outer shell and descending directly to the lower part by maximally blocking the internal space. As a result, the main airflow is formed by inducing the gas to the main air hole 311 in the center. At the same time, the auxiliary airflow is formed by distributing and inducing a portion of the gas to a plurality of relatively small auxiliary air holes 312 arranged in multiple circles around the main air hole 311, thereby performing the capturing reaction.

[0093] On the upper surface of the upper capture section 31, there are radially arranged triangular plates 313 that traverse multiple circular auxiliary air holes 312 and protrude vertically. Between each triangular plate 313, there are radially arranged cross-shaped plates 314 that traverse the auxiliary air holes 312 and protrude vertically, thereby inducing airflow and forming vortices to improve capture efficiency. On the lower surface, there are radially arranged rectangular plates 315 that traverse the auxiliary holes 312 and protrude vertically, thereby inducing the exhaust gas that descends through the main air hole 311 and the auxiliary air holes 312 to descend evenly while performing capture.

[0094] Furthermore, the triangular plate 313 can be formed with an angle that gradually increases from the outer contour to the main vent side, thereby more effectively inducing airflow when the gas flowing into the outer contour flows to the main vent 311 side inward.

[0095] Furthermore, perpendicularly intersecting vortex plates can be selectively formed at the upper end of the triangular plate 313, and pores of the through plate can be further formed, thereby improving the vortex formation efficiency.

[0096] Furthermore, the upper capturing section 31 is installed at a certain height from the middle capturing section 32 via a spacer material 316 of a certain length installed at the lower part and a support member 317. In order to fix at least four or more spacer materials, the support member 317 is constructed as a strip of a certain width along the upper end shape of the middle capturing section 32 and has multiple holes, thereby fixing the two sides by bolting or welding.

[0097] The middle section capture section 32 is structured so as to contain the gas flowing into the central section from the upper section capture section 31 and capture the reaction byproducts, and the inner region is formed by the space section. For this purpose, a quadrilateral outer perimeter is formed by multiple planar cross-shaped vertical plates 321 attached to the lower part at a certain distance from the upper section capture section and arranged at a certain gap. Moreover, a planar inner cross-shaped vertical plate 322, which is relatively smaller than the cross-shaped vertical plate 321, is provided in the lower center of the inner region of the cross-shaped vertical plate 321 that forms the outer perimeter.

[0098] Furthermore, an exhaust plate 323 with multiple vent holes 323a is provided at the lower part of the planar cross-shaped vertical plate 321 and the inner cross-shaped vertical plate 322 for discharging gas flowing into the lower part of the inner region to the outside.

[0099] The exhaust plate 323 may also be formed only on the lower part of the planar cross-shaped vertical plate 321 forming the outer periphery and the inner cross-shaped vertical plate 322.

[0100] Furthermore, as another embodiment of the exhaust plate 323, the planar cross-shaped vertical plate 321 and the inner cross-shaped vertical plate 322 can be assembled into a cross-shaped grid by embedding between the planar plates, so that when assembling the middle section capture part 32, the exhaust plate 323 formed at the lower part of each plate is also composed of multiple components assembled into a grid shape.

[0101] Furthermore, the planar cross-shaped vertical plate 321 is formed with a relatively larger area protruding inward from the upper side and a relatively larger area protruding outward from the lower side, thus creating a capture space where the lower space in the inner region is larger than the upper space. That is, based on the cross-shaped planar cross-section, the plates protruding inward and outward are formed at different heights with different areas along the outer perimeter of the plate; specifically, the area of ​​the inward-protruding plate is relatively larger at the top and relatively smaller at the bottom, and the area of ​​the outward-protruding plate is relatively larger at the bottom and relatively smaller at the top.

[0102] By employing the method described above, a more sustained capture can be achieved compared to situations where the upper and lower spaces are identical.

[0103] Furthermore, in the first half of the usage cycle, because the area protruding inward on the upper side of the planar cross-shaped vertical plate 321 is relatively large, more capture reactions can be performed in the main airflow and accumulate in the wider space below. In the second half of the usage cycle, because the area protruding outward on the lower side of the planar cross-shaped vertical plate 321 is relatively large, more capture reactions can be performed in the gas descending through the outer region.

[0104] If the middle capture section is formed in the same way as the upper and lower capture spaces, which are different from the upper and lower capture spaces, the upper part may be blocked first during the execution of the capture reaction, thus leading to a decrease in capture efficiency.

[0105] Furthermore, because the planar cross-shaped vertical plate 321 is constructed in a planar form without forming pores on the plate for gas movement, unlike existing capture plates that have multiple pores of the same or different sizes, the incoming airflow can flow rapidly downwards along the plane without resistance.

[0106] Furthermore, in the lower part of the outer region of the planar cross-shaped vertical plate 321, a vortex plate 324 with multiple vents 324a formed thereon may be included, which is installed along the outer periphery. In this case, the vortex plate 324 may be formed in an inclined shape with a relatively high outer side.

[0107] Furthermore, the vortex plate 324 installed along the outer periphery can be installed in multiple sections in the vertical direction. In this case, by making the vortex plate 324 formed at the lower end relatively large, the vortex forming efficiency can be improved, while multiple sections prevent the captured reaction byproducts from falling downwards and being discharged through the gas outlet 13a.

[0108] The vortex plate 324 can be constructed by forming a groove on the surface of the cross-shaped vertical plate 321 and embedding it, or by welding. In order to support the inclined structure, the support component can be connected to the cross-shaped vertical plate or the lower capture part and fixed by welding or other means.

[0109] By equipping the vortex plate 324 configured as described above, a vortex can be formed while reducing the flow rate of the gas that is discharged to the outside of the middle section of the capture section and does not descend during the latter half of the usage cycle, thereby increasing the capture reaction time. It can also prevent the captured and accumulated reaction byproducts from falling and being discharged through the gas outlet.

[0110] The mid-section capturing section can be manufactured in various forms as described in the various embodiments.

[0111] As an example, although not illustrated in the accompanying drawings, a quadrilateral perimeter can be formed by equipping multiple independent planar cross-shaped vertical plates 321, and then one or more internal cross-shaped vertical plates 322 can be arranged inside it, and then the exhaust plate 323 can be combined by welding or embedding to achieve an integrated structure.

[0112] As another embodiment, a single plate consisting of a single surface can be used and assembled into a grid shape by perpendicularly intersecting each other, thereby forming a planar cross-shaped vertical plate 321, an inner cross-shaped vertical plate 322, and an exhaust plate 323 by intersecting each other in a cross shape at the outer periphery and the center.

[0113] That is, a portion of the exhaust plate 323 protrudes upwards from its upper part to form multiple plates constituting one side of the cross-shaped vertical plate 321, and a portion of the exhaust plate 323 also protrudes upwards from its upper end to form one side of the cross-shaped vertical plate 321. Furthermore, a portion of the exhaust plate 323 protrudes upwards from its upper end to form one side of the cross-shaped vertical plate 321, and a portion of the exhaust plate 323 protrudes upwards from its middle to form one side of the inner cross-shaped vertical plate 322. By forming multiple insert grooves on the exhaust plates 323 of different shapes as described above and inserting them into each other in a grid pattern, the cross-shaped vertical plate 321, the inner cross-shaped vertical plate 322, and the exhaust plate 323 can be constructed. After the inserting and joining are completed, they can be finally welded and fixed.

[0114] In the first half of the usage cycle, the mid-section capture section 32 configured as described above allows the main gas flow to be contained in the lower part of the central part of the inner region of the planar cross-shaped vertical plate 321 forming the outer periphery, and then the gas flow is discharged to the outer region through the exhaust plate 323. As a result, the reaction byproducts contained in the gas are captured and solidified in the inner region space of the planar cross-shaped vertical plate 321 and the inner cross-shaped vertical plate 322. However, in the second half of the usage cycle, the capture space is reduced because the multiple vents 323a formed in the exhaust plate 323 are blocked and it is difficult to exhaust the gas. Therefore, the main gas flow is induced to the outer region through the space between the multiple planar cross-shaped vertical plates 321 that are installed at certain intervals to form the outer periphery, and the reaction byproducts are captured in the outer region of the planar cross-shaped vertical plate 321. That is, when the amount of reaction byproducts captured increases, they can flow to the outside through the spacer on the upper side of the cross-shaped capture plate 321 and then descend, thereby performing an additional capture reaction in the outer region of the planar cross-shaped vertical plate 321.

[0115] By means of the gas flow and capture method described above, since the planar cross-shaped vertical plate 321 is formed with a relatively large area protruding inward on the upper side and a relatively large area protruding outward on the lower side, capture can be performed in the upper part of the inner region and accumulated in the wider space in the lower part during the first half of the usage cycle, while it descends to the lower part of the outer region during the second half of the usage cycle, thereby achieving a greater capture amount.

[0116] Furthermore, by installing a vortex plate 324 with multiple holes along the outer periphery at the lower part of the outer region of the multiple planar cross-shaped vertical plates 321 constituting the outer periphery, a vortex can be formed while reducing the flow rate of the gas that is discharged to the outer side of the middle section and then descends to the lower part in the latter half of the use cycle, thereby increasing the capture reaction time. Moreover, it can also prevent the captured and accumulated reaction byproducts from falling and being discharged through the gas outlet.

[0117] The lower section capture section 33 is combined with the lower part of the middle section capture section 32 and is composed of an outer contour capture plate section 331 with multiple air holes formed on the surface, a middle capture plate section 332 and an inner capture plate section 333. This prevents the gas after the capture reaction is performed in the inner and outer regions of the middle section capture section 32 from falling directly and flowing into the gas outlet 13a formed in the lower plate of the outer shell. After the gas is induced from the outer contour to the inner side and the final capture reaction is performed, the gas flow is induced to flow into the upper part of the gas outlet 13a that protrudes from the center of the lower plate of the outer shell and falls.

[0118] Furthermore, the lower capture section 33 is mounted on the lower plate of the housing, thereby connecting adjacent plates in the lower end of the middle capture plate of the lower capture section 33 and attaching to the support plate 334 on the plane having multiple air holes, thereby supporting the entire middle capture section 32 in a supported state and ensuring smooth gas flow, while capturing reaction byproducts in the gas itself.

[0119] The lower section capturing section 33, which is composed of the outer contour capturing plate section 331, the middle capturing plate section 332 and the inner side capturing plate section 333, is formed such that its lower end gradually approaches the lower plate of the outer shell from the outer contour capturing plate section 331 to the inner side capturing plate section 333, so that it is preferably configured in a shape that allows the incoming gas to flow in sequentially.

[0120] Next, the lower segment capture unit 33 of one embodiment will be described in more detail.

[0121] The outer contour capture plate portion 331 can be constructed as a quadrilateral cylindrical structure (or a cylindrical or polygonal cylindrical structure) with an open lower part, and multiple air holes of the same size can be formed in the upper side capture plate and each side capture plate.

[0122] At this time, multiple vortex-forming plates 331a are arranged in multiple segments in the vertical direction around the outer side of the outer contour capture plate portion 331, forming an inclined angle that gradually rises outward and upward.

[0123] The vortex-forming plate 331a can form vortices while inducing the descending airflow from the top to the inside, thereby improving the capture efficiency. To this end, the outer end of the vortex-forming plate 331a can be machined along its length into a shape such as a continuous semicircle or an uneven surface to further enhance vortex formation efficiency. Furthermore, the vortex-forming plate 331a can also prevent captured and accumulated reaction byproducts from falling off and being discharged through the gas outlet.

[0124] The intermediate capture plate 332 can be constructed as a four-sided cylindrical structure (or a cylindrical or polygonal cylindrical structure) with an open lower part, and is separated from the upper side of the outer capture plate 331 by a spacer material 332a. The upper side capture plate can be constructed as a blocked structure, forming multiple pores in each side capture plate. It can also be formed with larger lower pores and smaller upper pores, thereby forming a main gas flow to the lower side. In this case, it is preferable to form pores in the intermediate capture plate 332 smaller than those in the outer capture plate 331 to ensure smooth gas flow and achieve the capture reaction.

[0125] The inner trapping plate 333 can be constructed as a four-sided cylindrical structure (or a cylindrical or polygonal cylinder) with open lower and upper parts, and is fixed to the middle trapping plate by means such as welding. Multiple pores are formed in each side trapping plate, and the lower pores are larger than the upper pores, so that the gas mainly flows into the lower side. In this case, it is preferable to form pores in the inner trapping plate 333 smaller than those in the outer trapping plate 331 to ensure smooth gas flow and achieve the trapping reaction.

[0126] The internal capture tower 3 of the present invention, as configured as described above, can concentrate the main gas flow into the outer shell from the upper capture section 31 to the central section and transfer it to the middle capture section 32. In the middle capture section 32, which is formed by the space section forming the inner region, the main gas flow can rapidly descend in the downward direction along the inner region of the planar cross-shaped vertical plate 321 that forms the outer periphery of the quadrilateral and perform a capture reaction in the planar cross-shaped vertical plate 321 and the inner cross-shaped vertical plate 322 to form reaction byproducts, thereby forming a main gas flow that is discharged to the outer region through the exhaust plate 323 located at the bottom.

[0127] The reaction byproducts captured in the planar cross-shaped vertical plate 321 and the inner cross-shaped vertical plate 322 will accumulate in the inner region, i.e., the internal space. At this time, by equipping the inner cross-shaped vertical plate, which is installed in the lower center of the inner region, the capture efficiency in the inner region can be improved.

[0128] Next, in the latter half of the usage cycle, where the capture space is reduced due to the capture and accumulation of reaction byproducts in the inner region of the planar cross-shaped vertical plate, the airflow will be induced from the upper part of the planar cross-shaped vertical plate to the outer region and then descend to the lower part, thereby additionally capturing the reaction byproducts.

[0129] Furthermore, the gas discharged to the outside of the middle trapping section 32 during the first or second half of the usage cycle will pass through the lower trapping section 33, which is composed of multiple outer trapping plates 331, middle trapping plates 332 and inner trapping plates 333, and induces the airflow to prevent the discharge of reaction byproducts. At the same time, the reaction byproducts contained in the gas will be captured. Then, after flowing into the upper part of the gas outlet 13a that protrudes upward from the center of the lower plate of the outer casing, it will descend and be discharged.

[0130] Figure 10 This is a schematic diagram illustrating the airflow during the first half of the usage cycle inside a capture device according to one embodiment of the present invention. Figure 11 This is a schematic diagram illustrating the capture tendency during the first half of the usage cycle inside a capture device according to one embodiment of the present invention. The drawing numbers used in the following description can be found in the above description.

[0131] As shown in the figure, the airflow and reaction byproduct capture tendency in the first half of the cycle are described below.

[0132] Gas flowing in through the gas inlet 12a formed on the upper plate 12 constituting the outer casing 1 will be heated by the heater 2 and will then flow radially through the heat sink 2a located at the top to the outer contour of the outer casing body 11 before descending.

[0133] Next, the main gas flow will be induced from the outer contour to the main gas hole 311 in the center by means of the upper section of the internal capture tower 3 and descend, thereby performing a capture reaction in the upper and lower sides and in the triangular plate 313, cross plate 314 and rectangular plate 315 installed on the upper side.

[0134] The main gas flow descending to the main vent 311 will flow into the inner region of the middle trapping section 32 and then downwards, forming a gas flow that is discharged to the outer region through the exhaust plate 323. At this time, the inner region of the planar cross-shaped vertical plate 321 and the inner cross-shaped vertical plate 322 will condense and capture the reaction byproducts in the gas and accumulate them in the inner region.

[0135] In particular, because the area protruding inward on the upper side of the planar cross-shaped vertical plate 321 is relatively large, the capture reaction can effectively occur in the upper part and accumulate in the internal space during the first half of the use cycle.

[0136] Next, the gas discharged to the outer region through the exhaust plate 323 will flow into the upper part of the gas outlet 13a, which protrudes upward from the center of the lower plate of the outer casing located inside it, after passing through the lower section capture part 33 which is divided into multiple sections, and then descend and be discharged.

[0137] Figure 12 This is a schematic diagram illustrating the airflow during the latter half of the usage cycle inside a capture device according to one embodiment of the present invention. Figure 13 This is a schematic diagram illustrating the airflow in the latter half of a cycle inside a capture device to which one embodiment of the present invention is applied.

[0138] As shown in the figure, the airflow in the latter half of the cycle and the tendency to capture reaction byproducts are described below.

[0139] Gas flowing in through the gas inlet 12a formed on the upper plate 12 constituting the outer casing 1 will be heated by the heater 2 and will then flow radially through the heat sink 2a located at the top to the outer contour of the outer casing body 11 before descending.

[0140] Next, the main gas flow will be induced from the outer contour to the main gas hole 311 in the center by means of the upper section of the internal capture tower 3 and descend, thereby performing a capture reaction in the upper and lower sides and in the triangular plate 313, cross plate 314 and rectangular plate 315 installed on the upper side.

[0141] The main gas flow descending to the main vent 311 will be unable to continue descending due to the reduced capture space caused by the capture and accumulation of reaction byproducts in the inner region of the planar cross-shaped vertical plate. The gas flow will be induced to the outer region from the upper part of the planar cross-shaped vertical plate and descend to the lower part, thereby additionally capturing reaction byproducts in the outer region of the planar cross-shaped vertical plate, which has not yet been used to capture a large amount of reaction.

[0142] In particular, because the area protruding outward on the lower side of the planar cross-shaped vertical plate 321 is large, the capture reaction can effectively occur in the lower part of the outer region during the latter half of the use cycle, thereby effectively capturing and accumulating on the lower plate in the outer region formed by the outer side of the outer shell body and the outer side of the planar cross-shaped vertical plate 321.

[0143] At this time, by installing vortex plates 324 along the outer periphery at the lower part of the outer region of the multiple planar cross-shaped vertical plates 321 constituting the outer periphery, vortices can be formed while reducing the flow rate of the gas descending downwards, thereby increasing the capture reaction time. Moreover, it can also prevent the captured and accumulated reaction byproducts from falling and being discharged through the gas outlet.

[0144] Next, the gas flows through the lower section capture section 33 into the upper part of the gas outlet 13a, which protrudes upward from the center of the lower outer shell plate located inside it, and then descends and is discharged.

[0145] This invention is not limited to the specific preferred embodiments described above. Various modifications can be made by those skilled in the art without departing from the spirit of the invention as claimed in the claims, and such modifications are included within the scope of the claims.

Claims

1. A device for capturing reaction byproducts that can expand the capture area by inducing airflow, characterized in that: As a reaction byproduct capture device used to contain the gas discharged after the deposition process in semiconductor manufacturing, inside the housing (1) and heated by the heater (2), while capturing the reaction byproducts contained in the gas by the internal capture tower (3) and only discharging the gas, The internal capture tower (3) is divided into an upper capture section (31) that performs the capture reaction while guiding the main gas flow to the central part and causing it to descend; a middle capture section (32) that has a structure with a space formed in the inner region for containing the incoming gas and capturing the reaction byproducts; and a lower capture section (33) that performs multi-stage capture of the reaction byproducts from the gas flowing in from the side while preventing the captured reaction byproducts from flowing out to the gas outlet (13a) of the outer shell, thereby performing multi-stage capture of the reaction byproducts at different heights. The middle section capturing section (32) is formed by a plurality of planar cross-shaped vertical plates (321) arranged at a certain gap to the lower part of the upper section capturing section (31), and a planar inner cross-shaped vertical plate (322) is provided in the lower center of the inner region of the middle section capturing section (32), which is formed by the planar cross-shaped vertical plates (321). The lower part of the planar cross-shaped vertical plate (321) and the planar inner cross-shaped vertical plate (322) is provided with a means for guiding the flow into the inner section. Gas from the lower part of the side region is discharged to the outside through an exhaust plate (323) with multiple pores (323a). Thus, depending on the capture amount in different usage cycles, in the first half of the usage cycle, the main gas flow is induced to descend to the lower part of the inner region and flow to the outer region to capture reaction byproducts. In the second half of the usage cycle, when the reaction byproducts are accumulated in the inner region and the capture space is reduced, they are induced to flow from the upper part of the inner region of the planar cross-shaped vertical plate (321) to the outer region and then descend, thereby performing additional capture reaction.

2. The reaction byproduct capture device according to claim 1, which can expand the capture area by inducing airflow, is characterized in that: The upper section capturing section (31) induces the gas distributed from the heater to the inner outer contour of the shell and descending through the main gas hole (311) in the center and the relatively small auxiliary gas holes (312) arranged in a circle around the main gas hole to the middle section capturing section (32) at a certain distance in the lower part, and captures the reaction byproducts in the gas on the upper surface where the triangular plate (313) and the cross-shaped plate (314) are installed and on the lower surface where the rectangular plate (315) is installed.

3. The reaction byproduct capture device according to claim 2, which can expand the capture area by inducing airflow, is characterized in that: On the upper surface of the upper capture section (31), a triangular plate (313) is arranged radially across multiple auxiliary air holes (312) arranged in multiple circles and protruding with an inclination that gradually increases from the outer contour to the main air hole. Between each triangular plate (313), a cross-shaped plate (314) is arranged radially across the auxiliary air holes (312) and protruding vertically. This induces the airflow and forms a vortex, thereby improving the capture efficiency. On the lower surface, a rectangular plate (315) is arranged radially across the auxiliary air holes (312) and protruding vertically. This induces the exhaust gas to descend evenly through the main air hole (311) and the auxiliary air holes (312) and performs capture.

4. The reaction byproduct capture device according to claim 1, which can expand the capture area by inducing airflow, is characterized in that: The planar cross-shaped vertical plate (321) is formed by a shape in which the area protruding inward from the upper side is relatively large and the area protruding outward from the lower side is relatively large, thereby forming a capture space in which the lower space of the inner region is larger than the upper space.

5. The reaction byproduct capture device according to claim 1, which can expand the capture area by inducing airflow, is characterized in that: The lower part of the outer region of the planar cross-shaped vertical plate (321) also includes a vortex plate (324) with multiple air holes (324a) installed along the outer periphery.

6. The reaction byproduct capture device according to claim 5, which can expand the capture area by inducing airflow, is characterized in that: The vortex plate (324) is installed in multiple segments in the vertical direction, and the vortex plate (324) formed in the lower segment is relatively large and is formed in an inclined shape with a relatively high outer side.

7. The reaction byproduct capture device according to claim 1, which can expand the capture area by inducing airflow, is characterized in that: The lower section capture section (33) is combined with the lower part of the middle section capture section (32) and is composed of an outer contour capture plate section (331), a middle capture plate section (332) and an inner capture plate section (333) with multiple pores formed on the surface. This prevents the gas after the capture reaction is performed in the inner and outer regions of the middle section capture section (32) from falling directly and flowing into the gas outlet (13a) formed in the lower plate of the outer shell. After the gas is induced from the outer contour to the inner side and the final capture reaction is performed, it flows into the upper part of the gas outlet (13a) that protrudes from the center of the lower plate of the outer shell and falls.

8. The reaction byproduct capture device according to claim 7, which can expand the capture area by inducing airflow, is characterized in that: The outer contour capturing plate (331) is configured with an open lower part, and multiple air holes are formed in the upper side capturing plate and each side capturing plate. Multiple vortex forming plates (331a) are arranged in multiple segments along the outer periphery of the outer side, forming an inclined angle that gradually rises from the outside to the upper part.

9. The reaction byproduct capture device according to claim 7, which can expand the capture area by inducing airflow, is characterized in that: The intermediate capture plate (332) is configured with an open lower part and is separated from the upper side of the outer contour capture plate (331) by a certain distance through a spacer material (332a). The upper side capture plate is configured with a closed structure and multiple air holes are formed on each side capture plate.

10. The reaction byproduct capture device according to claim 7, which can expand the capture area by inducing airflow, is characterized in that: The inner capture plate (333) is formed and fixed to the middle capture plate by a structure with an open lower and upper part, and multiple air holes are formed on each side capture plate.

11. The reaction byproduct capture device according to claim 1, which can expand the capture area by inducing airflow, is characterized in that: Multiple filter plates (13b) are arranged at certain intervals in the outer casing (1) and protrude obliquely along the outer periphery of the gas outlet (13a) protruding from the upper part of the downward plate (13) to form vortices in the rising gas.

Images