光电探测器及其制备方法
By using a gallium telluride layer to form a heterojunction with the substrate in the photodetector and combining it with a hexagonal boron nitride protective layer, the problem of insufficient photosensitiveness of the photodetector is solved, and effective detection of lasers in a wide wavelength range is achieved, which is suitable for polarized light detection.
CN116741868BActive Publication Date: 2026-07-17INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
- Filing Date
- 2023-08-03
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing photodetectors suffer from insufficient light sensitivity and a small photodetection range due to the bandgap of the materials themselves, which limits their application in complex environments.
Method used
By forming a heterojunction between a gallium telluride layer on a substrate and the substrate, and utilizing the in-plane anisotropy of the gallium telluride layer in combination with a hexagonal boron nitride protective layer, photoelectric conversion of laser light over a wide wavelength range can be achieved.
Benefits of technology
It achieves effective detection of lasers in the wavelength range of 450-1064nm, improves the photosensitiveness and detection range of the photodetector, and is suitable for the detection of polarized light.
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Figure CN116741868B_ABST
Abstract
本公开提供了一种光电探测器，包括：衬底；绝缘层，设置在部分的衬底上；碲化镓层，设置在衬底和绝缘层上，与衬底形成异质结，使异质结中的电子吸收来自外部照射的光子产生跃迁；第一电极，设置在碲化镓层上；第二电极，设置在衬底的与绝缘层相对的一侧，通过第一电极和第二电极施加的外加电场使电子定向移动产生探测电流并通过第一电极和第二电极输出。采用低对称晶体结构的碲化镓层与衬底形成异质结，使能带相交或错位，导致电子运输现象的变化，可以同时发挥衬底和碲化镓层两个材料的不同特性，使光电探测器可以探测较宽波长范围内的激光。
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