Semiconductor structure and method of forming the same

By forming a conductive layer on a substrate and patterning it during the memory manufacturing process, and then using a mask layer to etch a semiconductor structure, the height difference problem caused by the loading effect is solved, improving the accuracy of the patterning process and the device performance.

CN116744677BActive Publication Date: 2026-07-24CHANGXIN MEMORY TECH INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHANGXIN MEMORY TECH INC
Filing Date
2023-06-13
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

In the manufacturing process of memory, the load effect causes a height difference between the mask patterns in the central and edge regions, resulting in defects during pattern transfer and affecting device performance.

Method used

By forming a conductive layer covering the central and peripheral regions on a substrate, and forming a peripheral pattern in the peripheral region, and then etching the conductive layer using a mask layer to form a first mask pattern, the height difference problem caused by the loading effect can be overcome, thereby improving the accuracy of the patterning process.

Benefits of technology

It eliminates etching defects during pattern transfer, avoids defects in the formation of conductive layers, improves device yield and performance, and avoids short-circuit risks.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present disclosure provides a semiconductor structure and a forming method thereof, and relates to the technical field of semiconductor. The forming method comprises the following steps: providing a substrate, the substrate comprising a center region and a peripheral region; forming a conductive layer on the substrate, the conductive layer covering the center region and the peripheral region in orthographic projection on the substrate; performing a patterning process on the conductive layer to form a peripheral pattern in the peripheral region; forming a mask layer on the side of the conductive layer away from the substrate, the mask layer comprising a first mask pattern, the orthographic projection of the first mask pattern on the substrate being located in the center region; and etching the conductive layer with the first mask pattern as a mask to form a first target pattern in the center region. The method provided by the present disclosure forms a peripheral pattern in the conductive layer of the peripheral region, and etches the conductive layer with the mask layer having the first mask pattern as a mask to overcome the height difference problem of the center region and the peripheral region due to the load effect, thereby improving the precision of the patterning process and further improving the yield of the device.
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