Memory elements and magnetic memory

Abstract

This invention relates to a memory element and a magnetic memory. The memory element includes: a first spin Hall layer; a first magnetic layer, made of insulating material, stacked on one side of the first spin Hall layer; a second spin Hall layer, stacked on the side of the first magnetic layer facing away from the first spin Hall layer; a second magnetic layer, stacked on the side of the second spin Hall layer facing away from the first magnetic layer; a tunneling layer, stacked on the side of the second magnetic layer facing away from the second spin Hall layer; and a reference layer, stacked on the side of the tunneling layer facing away from the second magnetic layer. The first adjacent ends of the first spin Hall layer and the second spin Hall layer are electrically connected, and the second adjacent ends are respectively used to connect electrode leads. The adjacent ends are the two end faces of the first spin Hall layer and the second spin Hall layer that are closest to each other. This invention connects the electrode leads to the same side, reducing the occupied area, increasing the integration density of the device, and contributing to the improvement of extremely small device manufacturing processes.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a memory element and a magnetic memory. Background Technology

[0002] With the development of semiconductor technology, the demands on information storage are constantly increasing, and information storage technology is facing increasingly severe challenges. Current storage technologies, despite continuous improvements in process nodes, still struggle to improve reliability at extremely small sizes. Therefore, there is an urgent need to explore a new memory mechanism that balances high density, high reliability, and high speed. Magnetic storage chips possess characteristics such as high speed, low power consumption, non-volatility, and radiation resistance, and are expected to further break through the bottlenecks of traditional silicon-based electronic devices in the "post-Moore's Law era."

[0003] The third generation of magnetic memory—spin-orbit-moment magnetic memory (SOT-MRAM)—typically operates by passing an electric current through a heavy metal layer to cause the magnetic moment to flip. SOT-MRAM possesses excellent performance characteristics such as fast write speed and high stability, showing great promise in the field of magnetic memory.

[0004] However, spin orbital magnetic memories are three-terminal devices, and due to their inherent limitations, it is difficult to increase their integration density. Summary of the Invention

[0005] Therefore, it is necessary to provide a memory element and magnetic memory that can improve integration density in response to the above-mentioned technical problems.

[0006] This invention provides a memory element, comprising: First spin Hall layer; The first magnetic layer, made of insulating material, is stacked on one side of the first spin Hall layer; The second spin Hall layer is stacked on the side of the first magnetic layer opposite to the first spin Hall layer; The second magnetic layer is stacked on the side of the second spin Hall layer facing away from the first magnetic layer; A tunneling layer is stacked on the side of the second magnetic layer opposite to the second spin Hall layer; A reference layer is stacked on the side of the tunneling layer opposite to the second magnetic layer; The first adjacent ends of the first spin Hall layer and the second spin Hall layer are electrically connected, and the second adjacent ends are respectively used to connect electrode leads. The adjacent ends are the two end faces of the first spin Hall layer and the second spin Hall layer that are closest to each other.

[0007] In one embodiment, the spin Hall angle directions of the first spin Hall layer and the second spin Hall layer are the same.

[0008] In one embodiment, the first spin Hall layer and the second spin Hall layer are made of the same material.

[0009] In one embodiment, the first spin Hall layer and the second spin Hall layer are made of heavy metal materials including tungsten, platinum or tantalum.

[0010] In one embodiment, the first adjacent end is provided with a connecting layer for conductively connecting the first spin Hall layer and the second spin Hall layer.

[0011] In one embodiment, the first magnetic layer is selected from ferromagnetic or ferrimagnetic insulating materials including ferrite and magnetic topology materials, or from insulating materials including nickel oxide and chromium oxide that can generate self-selected waves.

[0012] In one embodiment, the second magnetic layer is selected from one or more ferromagnetic materials including Fe, Co, Ni, FeCo, CoFeB, and FeB.

[0013] The present invention also provides a magnetic memory, including a substrate, a bottom electrode, a protective layer, and the memory element described above. The bottom electrode is disposed on the side of the reference layer opposite to the tunneling layer. The substrate is stacked on the side of the bottom electrode opposite to the reference layer. The protective layer is stacked on the side of the first spin Hall layer opposite to the first magnetic layer.

[0014] In one embodiment, an antiferromagnetic layer is further included, which is disposed between the bottom electrode and the reference layer.

[0015] The present invention also provides a magnetic memory, including a substrate, a top electrode, and the memory element described above, wherein the substrate is disposed on the side of the first spin Hall layer opposite to the first magnetic layer, and the top electrode is disposed on the side of the reference layer opposite to the tunneling layer.

[0016] In the aforementioned memory element and magnetic memory, the first magnetic layer insulates and separates the first spin Hall layer from the second spin Hall layer, and conductively connects them to the first adjacent end. When current flows through the first spin Hall layer and the second spin Hall layer, it enables the connection of two different electrode leads to the same side of the memory, namely the second adjacent end. Connecting the electrode leads to the same side reduces the occupied area, increases the integration density of the device, and helps to improve the process of extremely small device size. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of a memory element structure according to one embodiment; Figure 2 This is a schematic diagram of a magnetic storage device structure according to one embodiment; Figure 3 This is a schematic diagram of a magnetic storage structure according to another embodiment; Figure 4 This is a schematic diagram of a magnetic storage structure according to another embodiment; Figure 5 This is a schematic diagram of a magnetic storage structure according to yet another embodiment.

[0019] Figure label: 110, First spin Hall layer; 120, First magnetic layer; 130, Second spin Hall layer; 140, Second magnetic layer; 150, Tunneling layer; 160, Reference layer; 170, Connecting layer; 210, Substrate; 220, Top electrode; 310, Base; 320, Bottom electrode; 330, Protective layer; 510, Antiferromagnetic layer. Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on the other component or there may be an intermediate component. When a component is considered to be "connected to" another component, it can be directly connected to the other component or there may be an intermediate component present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this specification are for illustrative purposes only and do not represent the only possible implementation.

[0022] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0023] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "over," and "on top" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0024] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used in this specification includes any and all combinations of one or more of the associated listed items.

[0025] The following is combined Figures 1-5 The present invention describes the memory element and magnetic memory.

[0026] like Figure 1 As shown, in one embodiment, a memory element includes a first spin Hall layer 110, a first magnetic layer 120, a second spin Hall layer 130, a second magnetic layer 140, a tunneling layer 150, and a reference layer 160.

[0027] The first spin Hall layer 110 is generally made of heavy metal materials such as tungsten (W), platinum (Pt) or tantalum (Ta), and can also be called the first heavy metal layer or the first spin orbital moment material layer. It is used to achieve magnetization reversal of the free layer when an electric current flows through it.

[0028] The first magnetic layer 120, made of insulating material, is stacked on one side of the first spin Hall layer 110 to maintain insulation between the opposite surfaces of the first spin Hall layer 110 and the second spin Hall layer 130.

[0029] The second spin Hall layer 130 is stacked on the side of the first magnetic layer 120 facing away from the first spin Hall layer 110. The second spin Hall layer 130 is generally made of heavy metal materials such as tungsten (W), platinum (Pt) or tantalum (Ta), and can also be called the second heavy metal layer or the second spin orbital moment material layer. It is used to achieve magnetization reversal of the free layer when an electric current flows through it.

[0030] The second magnetic layer 140 is stacked on the side of the second spin Hall layer 130 facing away from the first magnetic layer 120. The second magnetic layer 140 serves as a free layer, and its magnetization can be reversed when current flows through the first spin Hall layer 110 and / or the second spin Hall layer 130.

[0031] The tunneling layer 150 is stacked on the side of the second magnetic layer 140 facing away from the second spin Hall layer 130. The tunneling layer 150 is made of a resistive switching material with different resistances under different voltage conditions. It includes, but is not limited to, one or more of magnesium oxide (MgO), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum pentoxide (Ta2O5), zinc oxide (ZnO), zirconium dioxide (ZrO2), or other resistive switching materials.

[0032] A reference layer 160 is stacked on the side of the tunneling layer 150 facing away from the second magnetic layer 140. It typically uses one or more of the following materials: Fe, Co, Ni, FeCo, CoNi, CoFeB, FeB, FePt, FePd, CoPt, or other suitable ferromagnetic materials. The reference layer is a synthetic antiferromagnetic structure comprising one or more non-magnetic (“NM”) metal layers sandwiched between two fixed ferromagnetic (“FM”) layers.

[0033] The first adjacent end 102 of the first spin Hall layer 110 and the second spin Hall layer 130 are electrically connected, and the second adjacent end 104 is used to connect electrode leads. The adjacent ends are the two end faces of the first spin Hall layer 110 and the second spin Hall layer 130 that are closest to each other.

[0034] Specifically, the adjacent ends are the two end faces of the first spin Hall layer 110 and the second spin Hall layer 130 that are closest to each other. The first spin Hall layer 110 and the second spin Hall layer 130 have at least two adjacent ends, namely a first adjacent end 102 and a second adjacent end 104, and the end faces or extension directions of the first adjacent end 102 and the second adjacent end 104 are opposite to each other. The first adjacent end 102 includes a first end face 112 of the first spin Hall layer 110 and a first end face 132 of the second spin Hall layer 130, and the first end face 112 and the first end face 132 are electrically connected. The second adjacent end 104 includes a second end face 114 of the first spin Hall layer 110 and a tail end face 134 of the second spin Hall layer 130. The second end face 114 and the tail end face 134 are respectively connected to two different electrode leads, and the write current flows in from one electrode lead and flows out from the other electrode lead.

[0035] In this embodiment of the memory element, the first magnetic layer 120 insulates and separates the first spin Hall layer 110 from the second spin Hall layer 120, and conductively connects them to the first adjacent end. When current flows through the first spin Hall layer 110 and the second spin Hall layer 130, two different electrode leads are connected to the same side of the memory, namely the second adjacent end 104. Connecting the electrode leads to the same side reduces the occupied area, increases the integration density of the device, and helps to improve the process of extremely small device size.

[0036] In this embodiment, the spin Hall angle directions of the first spin Hall layer 110 and the second spin Hall layer 130 are the same, or the materials used for the first spin Hall layer 110 and the second spin Hall layer 130 are the same, that is, both are made of heavy metal materials such as tungsten, platinum or tantalum.

[0037] A connecting layer 170 is provided at the first adjacent end 102. The connecting layer 170 may be a conductor such as a metal or alloy, and the connecting layer 170 cannot be connected to the reference layer. The connecting layer 170 is used to electrically connect the first spin Hall layer 110 and the second spin Hall layer 130.

[0038] The first magnetic layer 120 is made of ferromagnetic or ferrimagnetic insulating materials, including ferrites and magnetic topological materials, or insulating materials that can generate spin waves, including nickel oxide and chromium oxide. Generally, the first magnetic layer 120 can be made of ferromagnetic / ferrimagnetic insulating materials such as ferrites and magnetic topological materials (MnSb2Te4, MnBi2Se4 and MnSb2Se4), or insulating materials that can generate spin waves such as NiO and CrO.

[0039] When current is applied, the current flows in opposite directions in the first spin Hall layer 110 and the second spin Hall layer 130, improving the switching efficiency. Specifically, the first spin Hall layer 110 and the second spin Hall layer 130 work together on the first magnetic layer 120, resulting in a smaller current required to switch the first magnetic layer 120. At the same time, the second magnetic layer 140 can achieve low-power switching under the coupling effect and the action of the second spin Hall layer 130.

[0040] In this embodiment, the memory element further includes a substrate 180 and a top electrode 190. The substrate 180 is disposed on the side of the first spin Hall layer 110 facing away from the first magnetic layer 120, and the top electrode 190 is disposed on the side of the reference layer facing away from the tunneling layer. The top electrode 190 may be a metal such as Ta, Ru, or Cu.

[0041] In addition, the present invention also provides a magnetic storage device.

[0042] like Figure 2 As shown, in one embodiment, a magnetic memory includes a substrate 210, a top electrode 220, and the aforementioned... Figure 1 The memory element has a substrate 210 disposed on the side of the first spin Hall layer 110 facing away from the first magnetic layer 120, and a top electrode 220 disposed on the side of the reference layer facing away from the tunneling layer. The top electrode 220 may be a metal such as Ta, Ru, or Cu.

[0043] like Figure 3 and Figure 4 As shown, for an out-of-plane (magnetic moment perpendicular to the sample surface) magnetic memory, in one embodiment, a magnetic memory includes a substrate 310, a bottom electrode 320, a protective layer 330, and the aforementioned... Figure 1 The memory element has a bottom electrode 320 disposed on the side of the reference layer 160 facing away from the tunneling layer 150. The bottom electrode 320 can be a metal such as Ta, Ru, or Cu. A substrate 310 is stacked on the side of the bottom electrode 320 facing away from the reference layer 160, and a protective layer 330 is stacked on the side of the first spin Hall layer 110 facing away from the first magnetic layer 120. The protective layer can be made of materials such as Ta or Ru. The connecting layer 170 can be square, trapezoidal, or other shapes.

[0044] like Figure 5 As shown, for in-plane (magnetic moment parallel to the sample surface) magnetic memory, an antiferromagnetic material is needed to pin the reference layer to fix its magnetic moment direction. In one embodiment, a magnetic memory includes an antiferromagnetic layer 510, and Figure 3 The magnetic memory described herein has an antiferromagnetic layer 510 disposed between the bottom electrode 320 and the reference layer 160, and the antiferromagnetic layer 510 is made of antiferromagnetic materials such as PtMn and IrMn.

[0045] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0046] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A memory element, characterized in that, include: First spin Hall layer; The first magnetic layer, made of insulating material, is stacked on one side of the first spin Hall layer; The second spin Hall layer is stacked on the side of the first magnetic layer opposite to the first spin Hall layer; The second magnetic layer is stacked on the side of the second spin Hall layer facing away from the first magnetic layer; A tunneling layer is stacked on the side of the second magnetic layer opposite to the second spin Hall layer; A reference layer is stacked on the side of the tunneling layer facing away from the second magnetic layer; The first adjacent ends of the first spin Hall layer and the second spin Hall layer are electrically connected, and the second adjacent ends are respectively used to connect electrode leads. The adjacent ends are the two end faces of the first spin Hall layer and the second spin Hall layer that are closest to each other.

2. The memory element according to claim 1, characterized in that, The spin Hall angle directions of the first spin Hall layer and the second spin Hall layer are the same.

3. The memory element according to claim 1, characterized in that, The first spin Hall layer and the second spin Hall layer are made of the same material.

4. The memory element according to claim 3, characterized in that, The first spin Hall layer and the second spin Hall layer are made of heavy metal materials including tungsten, platinum or tantalum.

5. The memory element according to claim 1, characterized in that, A connecting layer is provided at the first adjacent end for conductively connecting the first spin Hall layer and the second spin Hall layer.

6. The memory element according to claim 1, characterized in that, The first magnetic layer is made of ferromagnetic or ferrimagnetic insulating materials including ferrite and magnetic topology materials, or insulating materials including nickel oxide and chromium oxide that can generate self-selected waves.

7. The memory element according to claim 1, characterized in that, The second magnetic layer is selected from one or more ferromagnetic materials including Fe, Co, Ni, FeCo, CoFeB, and FeB.

8. A magnetic storage device, characterized in that, The device includes a substrate, a bottom electrode, a protective layer, and a memory element as described in any one of claims 1 to 7, wherein the bottom electrode is disposed on the side of the reference layer opposite to the tunneling layer, the substrate is stacked on the side of the bottom electrode opposite to the reference layer, and the protective layer is stacked on the side of the first spin Hall layer opposite to the first magnetic layer.

9. The magnetic storage device according to claim 8, characterized in that, It also includes an antiferromagnetic layer disposed between the bottom electrode and the reference layer.

10. A magnetic storage device, characterized in that, The device includes a substrate, a top electrode, and a memory element as described in any one of claims 1 to 7, wherein the substrate is disposed on the side of the first spin Hall layer opposite to the first magnetic layer, and the top electrode is disposed on the side of the reference layer opposite to the tunneling layer.

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