An IGBT packaging structure, semiconductor device and packaging method

Abstract

The application discloses an IGBT packaging structure, a semiconductor device and a packaging method. The packaging structure comprises a plastic packaging frame, an electrode bonding part, a planar electrode and a bonding piece. The plastic packaging frame is internally provided with a wafer bonding area, and the top of the frame is a packaging surface. The electrode bonding part is arranged on the wafer bonding area. The planar electrode is arranged on the packaging surface. The bonding piece is arranged between the wafer bonding area and the planar electrode and is electrically connected to the electrode bonding part and the planar electrode at two ends respectively. The packaging structure sets the planar electrode on the packaging surface above the wafer bonding area and arranges the bonding piece between the wafer bonding area and the planar electrode. The electrical connection of the IGBT is realized by electrically connecting the two ends of the bonding piece to the electrode bonding part and the planar electrode, the contact area of the bonding part is increased, the heat gathering effect of the bonding part is effectively reduced, and the heat dissipation of the IGBT during operation is better.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device packaging technology, and in particular to an IGBT packaging structure, semiconductor device, and packaging method. Background Technology

[0002] In recent years, Insulated Gate Bipolar Transistors (IGBTs) have developed rapidly and are widely used in AC motors, variable frequency air conditioners, switching power supplies, traction drives, high-speed rail transportation, and other fields. Furthermore, with increasing application demands, the power and switching frequency of IGBTs have further increased, leading to a significant increase in heat generation. Therefore, the heat dissipation capacity of IGBTs has become a major factor limiting their application. For example... Figure 7 As shown, the traditional packaging of IGBT devices involves encapsulating the IGBT chip and FWD (freewheeling diode chip) together with a pot, and leading the electrode bonding portion to the pins via wire bonding. This packaging structure has a serious heat dissipation problem, especially under high power and high frequency conditions, where the heat generation problem is more prominent. Furthermore, there is a severe heat accumulation effect at the first bonding point of the bonding wire. As the service life increases, the bonding point will become defective due to heat accumulation, resulting in increased contact resistance and severe heat generation, which can easily cause the device to burn out. Summary of the Invention

[0003] This invention provides an IGBT packaging structure, semiconductor device, and packaging method, which solves the problem of severe heat accumulation at the electrode bonding site leading to serious IGBT overheating in the prior art.

[0004] In a first aspect, embodiments of the present invention provide an IGBT packaging structure, which includes a molding frame, an electrode bonding portion, a planar electrode, and a bonding member; the molding frame has a wafer bonding area inside, and the top of the molding frame is a packaging surface; the electrode bonding portion is disposed on the wafer bonding area; the planar electrode is disposed on the packaging surface; the bonding member is disposed between the wafer bonding area and the planar electrode, and its two ends are electrically connected to the electrode bonding portion and the planar electrode, respectively.

[0005] In the IGBT packaging structure provided in this embodiment of the invention, the electrode bonding portion includes an emitter bonding portion, the bonding member includes a first bonding post, the planar electrode includes a first planar electrode, and the two ends of the first bonding post are respectively fixed to the emitter bonding portion and the first planar electrode.

[0006] In the IGBT packaging structure provided in the embodiments of the present invention, the electrode bonding portion further includes an FWD negative electrode bonding portion, and the bonding member further includes a second bonding post. The second bonding post is spaced apart from the first bonding post, and the two ends of the second bonding post are respectively fixed to the FWD negative electrode bonding portion and the first planar electrode.

[0007] In the IGBT packaging structure provided in the embodiments of the present invention, the first planar electrode includes a first side and a second side opposite to each other. The first side extends toward one edge of the molding frame, and the second side extends toward the opposite edge of the molding frame. The first bonding post and the second bonding post are respectively fixed to the first side and the second side.

[0008] In the IGBT packaging structure provided in this embodiment of the invention, the electrode bonding portion further includes a collector bonding portion, the planar electrode includes a second planar electrode, the bonding member includes a third bonding post, and the two ends of the third bonding post are respectively fixed to the second planar electrode and the collector bonding portion.

[0009] In the IGBT packaging structure provided in the embodiments of the present invention, the electrode bonding portion further includes a gate bonding portion, the bonding member includes a fourth bonding post, the planar electrode includes a third planar electrode, and the two ends of the fourth bonding post are respectively fixed to the gate bonding portion and the third planar electrode.

[0010] In the IGBT packaging structure provided in the embodiments of the present invention, at least one side of the planar electrode extends to the edge of the molding frame.

[0011] In the IGBT packaging structure provided in the embodiments of the present invention, the IGBT package further includes a copper substrate, which is laid on the wafer bonding area around the electrode bonding portion.

[0012] In a second aspect, embodiments of the present invention provide a semiconductor device, the semiconductor device comprising the IGBT packaging structure described in the first aspect above.

[0013] Thirdly, embodiments of the present invention provide a packaging method, which uses the IGBT packaging structure described in the first aspect of the present invention for packaging. The method includes: welding electrode bonding portions and bonding elements and planar electrodes; molding and filling with molding compound; and drying and solidifying into a gel.

[0014] This invention provides an IGBT packaging structure, semiconductor device, and packaging method. The packaging structure includes a molding frame, an electrode bonding portion, a planar electrode, and a bonding member. The molding frame has a wafer bonding area inside, and its top is the packaging surface. The electrode bonding portion is disposed on the wafer bonding area. The planar electrode is disposed on the packaging surface. The bonding member is disposed between the wafer bonding area and the planar electrode, with its two ends electrically connected to the electrode bonding portion and the planar electrode, respectively. This packaging structure places the planar electrode on the packaging surface above the wafer bonding area and places the bonding member between the wafer bonding area and the planar electrode. The electrical connection of the IGBT is achieved by electrically connecting the two ends of the bonding member to the electrode bonding portion and the planar electrode, increasing the contact area at the bonding point, effectively mitigating the heat accumulation effect at the bonding point, and resulting in better heat dissipation during IGBT operation. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the IGBT packaging structure provided in an embodiment of the present invention;

[0017] Figure 2 for Figure 1 Enlarged view of part A;

[0018] Figure 3 This is a schematic diagram of the structure of a molding frame provided in an embodiment of the present invention;

[0019] Figure 4 This is a three-dimensional structural diagram of an IGBT packaging structure provided in an embodiment of the present invention;

[0020] Figure 5 for Figure 4 Enlarged view of part B;

[0021] Figure 6 This is an isometric view of an IGBT packaging structure provided in an embodiment of the present invention;

[0022] Figure 7 This is a schematic diagram of the bonding structure of a conventional IGBT package provided in an embodiment of the present invention;

[0023] Figure 8 This is a flowchart illustrating the steps of the encapsulation method provided in an embodiment of the present invention;

[0024] The labels for the attached figures are as follows:

[0025] 10. Molding frame; 11. Wafer bonding area; 12. Packaging surface; 20. Electrode bonding portion; 201. Emitter bonding portion; 202. FWD negative electrode bonding portion; 203. Collector bonding portion; 204. Gate bonding portion; 30. Planar electrode; 31. First planar electrode; 311. First side; 312. Second side; 32. Second planar electrode; 33. Third planar electrode; 40. Bonding component; 401. First bonding post; 402. Second bonding post; 403. Third bonding post; 404. Fourth bonding post; 50. Copper substrate. Detailed Implementation

[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] The directional terms used in this invention, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding this invention, and not for limiting it. Furthermore, in the drawings, structures that are similar or identical are indicated by the same reference numerals.

[0028] Reference Figures 1 to 7 , please refer to Figure 1 and Figure 2 This document illustrates an embodiment of the IGBT packaging structure provided by the present invention. The structure and working principle of this IGBT packaging structure will be described in detail below with reference to the accompanying drawings. The IGBT packaging structure includes a molding frame 10, an electrode bonding portion 20, a planar electrode 30, and a bonding member 40. The molding frame 10 has a wafer bonding region 11 inside, and the top of the molding frame 10 is a packaging surface 12. The electrode bonding portion 20 is disposed on the wafer bonding region 11. The planar electrode 30 is disposed on the packaging surface 12. The bonding member 40 is disposed between the wafer bonding region 11 and the planar electrode 30, and its two ends are electrically connected to the electrode bonding portion 20 and the planar electrode 30, respectively.

[0029] In this embodiment, refer to Figure 3The molding frame 10 serves as the main frame of the IGBT (Insulated Gate Bipolar Transistor), containing the IGBT chip, diode chip, and FWD (Freewheeling diode) used to implement the IGBT function. Additionally, the molding frame 10 includes a solder layer, interconnecting wires, and other structures. The molding frame 10 can be designed using epoxy resin or other molding materials through a potting process to encapsulate and protect the internal wafer, preventing interference from the external environment and avoiding corrosion from moisture, corrosive gases, etc. The wafer bonding region 11 is a planar area inside the molding frame 10, where all the electrodes inside the IGBT are distributed. The electrode bonding portion 20 is where the internal electrodes are connected and bonded to the external environment. Essentially, the internal electrodes are distributed on the metal layer of the wafer bonding region 11, maintaining electrical connection with the internal electrodes. Each electrode corresponds to an electrode bonding portion 20 on a metal layer, and each electrode bonding portion 20 occupies a certain area.

[0030] In this embodiment, refer to Figure 6 The planar electrode 30 is a thin metal sheet structure fixed on the packaging surface 12 of the plastic encapsulation frame 10. It is located vertically above the wafer bonding area 11 and is relatively parallel to the wafer bonding area 11. The planar electrode 30 serves as a structure for external connection and can be made of a metal material with good conductivity, such as copper or aluminum. It can be directly led out to the outside of the plastic encapsulation frame 10 as an external pin of the IGBT device. The specific shape of the led-out part can be freely designed according to actual needs.

[0031] In this embodiment, refer to Figure 2 , Figure 4 and Figure 5The bonding component 40 is disposed between the wafer bonding region 11 and the planar electrode 30. The shape of the bonding component 40 is generally fixed, possessing a certain length and width of conductor structure, typically using a strip or columnar structure. It can be designed using a highly conductive metal material, such as copper or aluminum. One end of the bonding component 40 is connected to the electrode bonding portion 20, and the other end is connected to the downward-facing side of the planar electrode 30. The internal electrodes of the IGBT are electrically connected to the planar electrode 30 through the bonding component 40. Each bonding component 40 corresponding to each electrode bonding portion 20 is independent of each other, which can effectively prevent arcing between electrodes under high voltage conditions. The bonding connection process mainly adopts metal deposition technology. The bonding component 40 is directly formed by metal deposition. During potting, space is reserved between the electrode bonding portion 20 and the planar electrode 30. Metal deposition is performed on the electrode bonding portion 20 in the reserved space until the encapsulation surface 12 is connected to the planar electrode 30. By depositing a bonding component 40 with a fixed shape, a uniform, dense, and well-adhesive metal film is formed on its surface, which can effectively improve the corrosion resistance, wear resistance, conductivity, and other properties of the bonding component 40. The size of the connection end of the bonding component 40 is adapted to the overall area of ​​the electrode bonding portion 20. The end face of the connection end of the bonding component 40 covers the metal layer area of ​​the electrode bonding portion 20 as much as possible, so that the contact is more sufficient. Of course, other processes can also be used for connection bonding, such as welding the two ends of the fixed-shape bonding component 40 to the electrode bonding portion 20 and the planar electrode 30 respectively. After the connection bonding is completed, the current flow direction of the IGBT is electrode bonding portion 20—bonding component 40—planar electrode 30, compared to... Figure 7 The traditional wire bonding structure shown reduces the bonding distance between the electrode and the pin, increases the wire width, increases the contact area at the bonding point, and improves the reliability of the bonding.

[0032] By implementing this embodiment, the contact area at the bonding point between the bonding member 40 and the electrode bonding portion 20 and the planar electrode 30 is increased, which effectively reduces the heat accumulation effect at the bonding point and overcomes the defect of severe heat accumulation effect at the bonding point in the traditional wire bonding method, so that the IGBT has better heat dissipation performance during operation.

[0033] In one embodiment, reference is made to Figures 1 to 5The electrode bonding portion 20 includes an emitter bonding portion 201, the bonding member 40 includes a first bonding post 401, and the planar electrode 30 includes a first planar electrode 31. The two ends of the first bonding post 401 are respectively fixed to the emitter bonding portion 201 and the first planar electrode 31. Specifically, the emitter bonding portion 201 is a metal layer on the wafer bonding region 11 where the emitter inside the IGBT is arranged. The first planar electrode 31 is disposed vertically above the emitter bonding portion 201 and is a thin metal sheet with good conductivity. The side of the first planar electrode 31 can be led out to the outside of the molding frame 10 as a pin of the IGBT emitter. The external shape can be arbitrarily designed according to the welding application requirements. The first bonding post 401 adopts a columnar metal structure, specifically aluminum, which is bonded by a deposition process. Of course, other metal materials or other processes can also be used for bonding. One end of the first bonding post 401 is connected to the emitter bonding portion 201. The emitter bonding portion 201 is connected at one end to the downward-facing side of the first planar electrode 31. The first bonding post 401 is generally perpendicular to both the wafer bonding region 11 and the first planar electrode 31, electrically connecting the first planar electrode 31 to the emitter bonding portion 201. The end faces of the two ends of the first bonding post 401 can maintain a larger contact area with the emitter bonding portion 201 and the first planar electrode 31. As the main output terminal of the current, the emitter of the IGBT can carry a larger current compared with the traditional wire bonding method, and effectively reduce the heat accumulation effect at the emitter bonding point, giving the IGBT better heat dissipation performance as a whole.

[0034] Furthermore, referring to Figure 4The electrode bonding portion 20 further includes an FWD negative electrode bonding portion 202, and the bonding member 40 further includes a second bonding post 402. The second bonding post 402 is spaced apart from the first bonding post 401, and the two ends of the second bonding post 402 are respectively fixed to the FWD negative electrode bonding portion 202 and the first planar electrode 31. Specifically, the FWD negative electrode bonding portion 202 is a metal layer on the wafer bonding region 11 where the negative electrode of the freewheeling diode inside the IGBT is arranged. Due to structural requirements, the FWD negative electrode inside the IGBT is connected to the emitter of the IGBT. Here, the overall area of ​​the first planar electrode 31 is relatively large. Both the FWD negative electrode bonding portion 202 and the emitter bonding portion 201 are located in the area below the first planar electrode 31. The second bonding post 402 can use the same material and connection process as the first bonding post 401. One end of the second bonding post 402 is connected to the FWD negative electrode bonding portion 202, and the other end is connected to the side of the first planar electrode 31 facing downwards. The second bonding post 402 and the first bonding post 31 are connected to each other. The bonding pillars 401 are horizontally spaced at a certain distance and are generally perpendicular to the wafer bonding area 11 and the first planar electrode 31. The first planar electrode 31 is electrically connected to the FWD negative electrode bonding part 202. The FWD negative electrode bonding part 202 is connected to the emitter bonding part 201 through the first planar electrode 31, establishing an electrical connection with the emitter bonding part 201. The end faces of the two ends of the second bonding pillar 402 can maintain a larger contact area with the FWD negative electrode bonding part 202 and the first planar electrode 31. When the IGBT is working, the freewheeling diode can provide a more stable current, and there will be no serious heat accumulation effect at the bonding point, so that the IGBT as a whole has better heat dissipation performance.

[0035] In one embodiment, reference is made to Figure 6The first planar electrode 31 includes a first side 311 and a second side 312 opposite to each other. The first side 311 extends toward one edge of the molding frame 10, and the second side 312 extends toward the other edge of the molding frame 10 opposite to each other. The first bonding post 401 and the second bonding post 402 are respectively fixed to the first side 311 and the second side 312. Specifically, the planar electrode 30 is generally in the shape of a thin sheet. The first side 311 and the second side 312 are two opposite sides of the planar electrode 30. The two sides extend horizontally towards the opposite two edges of the molding frame 10. The upper end of the first bonding post 401 is fixedly connected to the first side 311, and the upper end of the second bonding post 402 is fixedly connected to the second side 312. The upper ends of the first bonding post 401 and the second bonding post 402 are mainly connected to the edge of the first planar electrode 31. A certain distance is formed between the first side 311 and the second side 312, which provides design space between the first bonding post 401 and the second bonding post 402. This allows for a larger cross-section of both, increasing the contact area at the bonding point, reducing the heat accumulation effect at the bonding point, and improving the overall heat dissipation performance of the IGBT.

[0036] In one embodiment, reference is made to Figures 1 to 5The electrode bonding portion 20 further includes a collector bonding portion 203. The planar electrode 30 includes a second planar electrode 32. The bonding member 40 includes a third bonding post 403. The two ends of the third bonding post 403 are respectively fixed to the second planar electrode 32 and the collector bonding portion 203. Specifically, the collector bonding portion 203 is a metal layer on the wafer bonding area 11 where the internal collector of the IGBT is arranged. The second planar electrode 32 is disposed vertically above the collector bonding portion 203 and is a thin metal sheet with good conductivity. The side of the second planar electrode 32 can be led out to the outside of the molding frame 10 as the pin of the IGBT collector. The external shape can be arbitrarily designed according to the welding application requirements. The third bonding post 403 adopts a columnar metal structure. The material can be aluminum, which is connected and bonded through a deposition process. Other metal materials or other processes can also be used for connection and bonding. One end of the third bonding post 403 is fixedly connected to the collector bonding portion. The third bonding post 403 is fixedly connected to the lower side of the second planar electrode 32 at one end. The third bonding post 403 is perpendicular to both the wafer bonding region 11 and the second planar electrode 32, electrically connecting the second planar electrode 32 to the collector bonding part 203. The end faces of the two ends of the third bonding post 403 can maintain a larger contact area with the collector bonding part 203 and the second planar electrode 32. As the end that collects and outputs electrons and converts the electron flow into current output, the collector can withstand a larger current compared with the traditional bonding method and effectively reduce the heat accumulation effect at the emitter bonding point, so that the IGBT as a whole has better heat dissipation performance.

[0037] In one embodiment, reference is made to Figures 1 to 5The electrode bonding portion 20 further includes a gate bonding portion 204. The bonding member 40 includes a fourth bonding post 404, and the planar electrode 30 includes a third planar electrode 33. The two ends of the fourth bonding post 404 are respectively fixed to the gate bonding portion 204 and the third planar electrode 33. Specifically, the gate bonding portion 204 is a metal layer on the wafer bonding region 11 where the internal gate of the IGBT is arranged. The third planar electrode 33 is disposed vertically above the gate bonding portion 204 and is a thin metal sheet with good conductivity. The side of the third planar electrode 33 can be led out to the outside of the molding frame 10 as a pin of the IGBT gate. The external shape can be arbitrarily designed according to the welding application requirements. The fourth bonding post 404 adopts a columnar metal structure. The material can be aluminum, which is connected and bonded through a deposition process. Other metal materials or other processes can also be used for connection and bonding. One end of the fourth bonding post 404 is fixedly connected to the gate bonding portion 204, and the other end is fixedly connected to the third planar electrode 33. On the side where the three planar electrodes 33 face downwards, the fourth bonding post 404 is perpendicular to both the wafer bonding region 11 and the third planar electrode 33, electrically connecting the third planar electrode 33 to the gate bonding portion 204. The end faces of the four bonding posts 404 can maintain a larger contact area with the gate bonding portion 204 and the third planar electrode 33. As the control terminal for turning the IGBT on and off, the gate needs to frequently receive the output of control current during operation, causing the IGBT to switch on and off at high frequency. Compared with the traditional bonding method, when frequently receiving the output of control current, there will be no serious heat accumulation effect at the bonding point of the gate, and the overall heat dissipation performance of the IGBT is better.

[0038] In one embodiment, reference is made to Figure 6 At least one side of the planar electrode 30 extends to the edge of the molding compound 10. Specifically, the planar electrode 30 is a thin metal sheet laid on the encapsulation surface 12 of the molding compound 10. The side of the planar electrode 30 can extend to the edge of the molding compound 10. It can be one side of the planar electrode 30 extending to the edge of the molding compound 10, or both sides of the planar electrode 30 extending to the edge of the molding compound 10. As long as the extended sides of the planar electrode 30 are reasonably arranged on the encapsulation surface 12 and do not exceed the edge range of the molding compound 10, the overall area of ​​the planar electrode 30 can be larger. When current flows through the planar electrode 30, the number of electrons passing through a unit area of ​​the planar electrode 30 is reduced, effectively improving the overall heat dissipation capacity of the IGBT.

[0039] In one embodiment, reference is made to Figures 3 to 5The IGBT package also includes a copper substrate 50, which is laid on the wafer bonding region 11 around the electrode bonding portion 20. Specifically, the copper substrate 50 is electrically connected to the collector of the IGBT and the positive electrode of the freewheeling diode, providing a forward voltage for the IGBT and the freewheeling diode. The copper substrate 50 is made of metallic copper, is thin and plate-shaped, and is laid flat on the entire wafer bonding region 11, surrounding the electrode bonding portion 20. It forms a clearance at the bonding point between the bonding member 40 and the electrode bonding portion 20, isolating it from the electrode bonding portion 20 to prevent multiple electrode bonding portions 20 and bonding members 40 from connecting together and causing a short circuit. When the IGBT is working, the heat generated at the bonding point and other parts is uniformly absorbed by the surface of the copper substrate 50, effectively dispersing the heat and improving the heat dissipation capacity of the IGBT.

[0040] In one embodiment, a semiconductor device is provided, which is packaged using the above-described IGBT packaging structure to realize semiconductor functions such as signal amplification, current control, and signal conversion. Since the specific structure and working principle of the IGBT packaging structure have been described in detail in the previous specification, they will not be repeated here for the sake of brevity.

[0041] The semiconductor device in this embodiment, due to the adoption of the IGBT packaging structure provided by the present invention, has an increased contact area at the bonding point between the electrode and the internal chip of the device, which improves its heat dissipation performance and has a wider range of applications in practice.

[0042] In one embodiment, an encapsulation method is provided, referring to... Figure 8 , Figure 8 This is a flowchart illustrating the steps of the packaging method in this embodiment. The IGBT packaging method is used to fabricate the above-mentioned IGBT packaging structure. The method includes steps S1-S3.

[0043] S1: Welding electrode bonding portion and bonding component, as well as planar electrode;

[0044] S2: Plastic sealing, filling with plastic sealing material;

[0045] S3: Dry and solidify into a gel.

[0046] It should be noted that before step S1, there are steps including material preparation, material selection, functional component soldering, and internal lead soldering. Specifically, the bonding components can be made of aluminum or copper and formed into square or cylindrical shapes. To facilitate soldering, one end of each bonding component is first soldered to the corresponding electrode bonding portion. Then, planar electrodes are soldered to the other end of each bonding component. It is important to note that during soldering, the soldering end of the bonding component should cover the metal layer on the electrode bonding portion as much as possible. Here, a portion of the planar electrode can extend outside the plastic encapsulation frame to facilitate its use as an external pin. Each planar electrode with a different polarity... The spacing between the electrodes should be appropriate, ensuring that the electrical signals do not interfere with each other. After soldering all the planar electrodes, the molding compound is poured into the molding frame. The molding compound is an electronically thermally conductive potting compound. Commonly used electronically thermally conductive potting compounds include epoxy resin, polyurethane, and silicone. The appropriate type can be selected according to the actual design requirements. During potting, it is important to ensure that the molding compound is evenly distributed throughout the molding frame. The molding compound should cover the planar electrodes to a certain thickness. Afterward, the filled molding compound can be dried using a drying device until it is cured. Once the encapsulation is complete, the portion of the planar electrodes outside the molding frame can be shaped into the required pin shape for use.

[0047] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. An IGBT packaging structure, characterized in that, include: A molding frame with a wafer bonding area inside, the top of the molding frame being the encapsulation surface; An electrode bonding portion is disposed on the wafer bonding region; A copper substrate, wherein the copper substrate is deposited on the wafer bonding region around the electrode bonding portion; A planar electrode is disposed on the package surface; the planar electrode is located vertically above the wafer bonding region and is relatively parallel to the wafer bonding region; at least one side of the planar electrode extends to the edge of the molding frame; A bonding component is disposed between the wafer bonding region and the planar electrode, and its two ends are electrically connected to the electrode bonding portion and the planar electrode, respectively. The size of the connecting end of the bonding component is adapted to the area of ​​the electrode bonding portion, and the end face of the connecting end of the bonding component covers the metal layer area of ​​the electrode bonding portion. The copper substrate forms a clearance at the bonding point between the bonding component and the electrode bonding portion, and remains isolated from the electrode bonding portion.

2. The IGBT packaging structure according to claim 1, characterized in that, The electrode bonding portion includes an emitter bonding portion, the bonding member includes a first bonding post, the planar electrode includes a first planar electrode, and the two ends of the first bonding post are respectively fixed to the emitter bonding portion and the first planar electrode.

3. The IGBT packaging structure according to claim 2, characterized in that, The electrode bonding portion further includes an FWD negative electrode bonding portion, and the bonding member further includes a second bonding post, which is spaced apart from the first bonding post. The two ends of the second bonding post are respectively fixed to the FWD negative electrode bonding portion and the first planar electrode.

4. The IGBT packaging structure according to claim 3, characterized in that, The first planar electrode includes a first side and a second side opposite to each other. The first side extends toward one edge of the molding frame, and the second side extends toward the opposite edge of the molding frame. The first bonding post and the second bonding post are respectively fixed to the first side and the second side.

5. The IGBT packaging structure according to claim 1, characterized in that, The electrode bonding portion further includes a collector electrode bonding portion, the planar electrode includes a second planar electrode, and the bonding member includes a third bonding post, the two ends of which are respectively fixed to the second planar electrode and the collector electrode bonding portion.

6. The IGBT packaging structure according to claim 1, characterized in that, The electrode bonding portion further includes a gate bonding portion, the bonding member includes a fourth bonding post, the planar electrode includes a third planar electrode, and the two ends of the fourth bonding post are respectively fixed to the gate bonding portion and the third planar electrode.

7. A semiconductor device, characterized in that, Including the IGBT packaging structure as described in any one of claims 1-6.

8. A packaging method, characterized in that, The package for the IGBT package structure according to any one of claims 1-6 includes: Welding electrode bonding portion and bonding component, as well as planar electrode; Plastic sealing involves filling the plastic sealant. It is dried and solidified into a gel.

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