一种正装高压LED芯片及制作方法
By setting cell isolation trenches on the epitaxial layer of the high-voltage LED chip and covering it with Bragg and metal reflective layers, the light leakage problem was solved, the light emission angle was increased, and the light pattern effect was improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGXI CHANGELIGHT CO LTD
- Filing Date
- 2023-07-24
- Publication Date
- 2026-07-17
AI Technical Summary
The existing high-voltage LED chips have a thin Bragg reflector layer at the isolation slot, which leads to severe light leakage, makes it impossible to effectively expand the light emission angle, and affects the light pattern effect.
N cell isolation trenches are set on the epitaxial layer of the positive high voltage LED chip, and a Bragg reflective layer and a metal reflective layer are covered on the side of the chip facing away from the substrate. The metal reflective layer covers the orthogonal projection of the cell isolation trenches and the first groove to reflect axial light into the chip.
This reduces light leakage, increases the side light emission angle of the upright high-voltage LED chip, and improves the uniformity and efficiency of the light pattern.
Smart Images
Figure CN116759512B_ABST