Robust and intrinsically safe laser fault detection in a circuit

Abstract

The invention provides a light generating system (1000) comprising a solid state light source (100), a luminescent material element (210), a sensor element (400) and a circuit (500), wherein: (a) the solid state light source (100) is configured to generate light source light (101), wherein the solid state light source (100) is functionally coupled to the circuit (500); (b) the luminescent material element (210) comprises a luminescent material (200), wherein the luminescent material element (210) is configured in a light receiving relationship with the solid state light source (100), and wherein the luminescent material (200) is configured to convert at least a part of the light source light (101) into luminescent material light (201); and (c) the sensor element (400) comprises a sensor component (410), wherein the sensor element (400) is comprised in the circuit (500), wherein the sensor component (410) comprises a photoresistor, wherein the photoresistor has a variable resistance that depends on an extent of exposure to light (11) selected from the group consisting of laser light (100) and luminescent material light (201).

Description

Technical Field

[0001] The present invention relates to a light generation system and a light generation device including such a light generation system. Background Technology

[0002] For example, the safety laser described in US10587090 describes an apparatus and method for an electromagnetic radiation source for eye safety, which uses a combination of laser diode excitation sources or waveguide gain elements, such as superluminescent diodes (SLEDs) based on gallium and nitrogen-containing materials and light emission / conversion sources based on phosphor materials. In some embodiments of US10587090, gallium and nitrogen-based violet, blue, or other wavelength emission waveguide gain elements or laser diode sources are tightly integrated with phosphor materials (e.g., yellow phosphors or red and green phosphors, or red, yellow, and green phosphors) to form a compact, high-brightness, and efficient white light source with a novel configuration designed for eye safety. Specifically, the safety configuration is designed to prevent the laser beam from being exposed to the environment in the event of damage to the light source. In some embodiments of US10587090, safety features are designed to terminate the laser action from the laser-based light source by altering the circuitry, optical path, or optical feedback into the laser gain element to reduce the laser below a threshold condition. In some examples of US 10587090, all optical output power from a laser-based light source will be stopped, and in other cases, the output optical power level and coherence will be significantly reduced to a level safe for the eyes. In all embodiments of US 10587090, the safety features are referred to as “inherent,” meaning they are designed to be self-contained in a closed loop and do not require interaction with external monitoring or computing devices. In one example, the source could be provided to a specialized application, such as a general-purpose application.

[0003] US 10408413B2 discloses an illumination device having at least one light sensor. The illumination device includes two or more light sources for emitting a polarized primary beam (P), a phosphor volume for at least partially converting primary light of the primary beam (P) into secondary light (S) having different wavelengths, the phosphor volume being arranged in the path of at least one primary beam (P), a focusing lens for focusing the polarized primary beam (P) from the two or more light sources onto the phosphor volume, and the at least one light sensor being arranged in at least a portion of the original path of the primary beam (P) downstream of the phosphor volume, wherein the light sensor is sensitive to at least the primary light and is polarization-sensitive. Summary of the Invention

[0004] Products using laser lighting may require fault protection measures to ensure user safety even in the event of a system malfunction. Existing products on the market, such as laser projectors, may result in unsafe high laser intensities during malfunctions. These could be equipped with optical sensor-based security protection and tamper detection devices, such as interlocks and safety switches. Such sensors can, for example, detect the amount of laser light and the amount of converted light, and an indication of a problem in the system is when this ratio changes or when the intensity increases above a certain threshold. Furthermore, a combination of optical and electrical sensors can be used, where the drive current is compared to the expected light output, and the system is forced to shut down in the event of unexpected values. One or more sensors can be connected to a control unit, which will shut down the laser power supply when a problem is detected, thus preventing direct user exposure to high-intensity laser light. Therefore, in this embodiment of sensor circuitry for fault detection, additional circuitry is required for the sensors and control unit to control the laser output. These systems need to be very precise and sensitive as they protect the system's safety (and classification). These additional controls add extra complexity to the system and, in some cases, can lead to "false tripping," meaning the laser system is shut down by protection circuitry even when there is no actual problem with the laser system. In the event of a system failure, it is desirable to prevent laser leakage from the system, which could expose people to direct laser light. One possible system failure mode manifests as damage or loss of the phosphor due to thermomechanical stress. When this occurs, reflection of the (blue) pump laser returning to the system from the wavelength converter unit may increase, potentially leading to damage or, in the worst case, laser emission into the environment. Other failure modes may involve the breakage or fracture of optical components, such as lenses and beam splitters, under thermomechanical stress. This may be accompanied by increased light scattering and changes in the laser beam path.

[0005] Therefore, one aspect of the present invention is to provide an alternative light generation system that preferably further eliminates at least partially one or more of the aforementioned disadvantages. The object of the present invention is to overcome or improve at least one disadvantage of the prior art, or to provide a useful alternative.

[0006] In a first aspect, the present invention provides a light generation system comprising, for example, a solid-state light source, a light-emitting material element, a sensor element, and circuitry. Specifically, in embodiments, the (solid-state) light source is configured to generate light from the light source, wherein the (solid-state) light source is functionally coupled to the circuitry. Furthermore, in embodiments, the light-emitting material element comprises a light-emitting material, wherein the light-emitting material element is configured to have a light-receiving relationship with the (solid-state) light source. Specifically, in embodiments, the light-emitting material is configured to convert at least a portion of the light from the light source into light from the light-emitting material. Furthermore, in embodiments, the sensor element may include a sensor component. In embodiments, the sensor element may be included in the circuitry. Furthermore, specifically, in embodiments, the sensor component includes a photoresistor. In embodiments, the photoresistor may have a variable resistance that depends on the degree of exposure to light selected from the group consisting of laser light and light from the light-emitting material. Therefore, in particular, in embodiments, the present invention provides a light generation system including a solid-state light source, a light-emitting material element, a sensor element, and a circuit, wherein: (a) the solid-state light source is configured to generate light source light, wherein the solid-state light source is functionally coupled to the circuit; (b) the light-emitting material element includes a light-emitting material, wherein the light-emitting material element is configured to have a light-receiving relationship with the solid-state light source, and wherein the light-emitting material is configured to convert at least a portion of the light source light into light-emitting material light; and (c) the sensor element includes a sensor component, wherein the sensor element is included in the circuit, wherein the sensor component includes a photoresistor, wherein the photoresistor has a variable resistance that depends on the degree of exposure to light selected from the group consisting of laser light and light-emitting material light.

[0007] This invention provides a simple and safe light generation system based on laser phosphors.

[0008] This invention provides a relatively simple configuration to reduce or block laser output directly in the circuit in the event of a system failure without the need for sensors and controllers, and essentially only works in the event of a genuine system failure, thus reducing the variation in “false tripping” of the laser safety cut-off system.

[0009] As described above, in the embodiments, the light generation system includes a (solid-state) light source, a light-emitting material element, a sensor element, and circuitry.

[0010] The term "light source" can, in principle, refer to any light source known in the art. It can be a conventional (tungsten) bulb, a low-pressure mercury lamp, a high-pressure mercury lamp, a fluorescent lamp, or an LED (light-emitting diode). In specific embodiments, the light source includes solid-state LED light sources (e.g., LEDs or laser diodes (or "diode lasers")). The term "light source" can also refer to multiple light sources, such as 2-200 (solid-state) LED light sources. Therefore, the term LED can also refer to multiple LEDs. Furthermore, the term "light source" in embodiments can also refer to so-called chip-on-board (COB) light sources. The term "COB" specifically refers to LED chips in the form of semiconductor chips that are neither packaged nor connected, but are directly mounted onto a substrate such as a PCB. Therefore, multiple light semiconductor light sources can be configured on the same substrate. In embodiments, a COB is a multi-LED chip configured together as a single lighting module. The light source can have a light-escape surface. For conventional light sources (such as bulbs or fluorescent lamps), this can be the outer surface of a glass or quartz housing. For LEDs, it can be, for example, an LED die, or, when resin is applied to the LED die, the outer surface of the resin. In principle, it can also be the end of an optical fiber. The term "escape surface" specifically refers to a portion of a light source where light actually leaves or escapes from the source. The light source is configured to provide a light beam. This light beam (and therefore) escapes from the light-emitting surface of the light source. The term "light source" can refer to a semiconductor light-emitting device, such as a light-emitting diode (LED), a resonant cavity light-emitting diode (RCLED), a vertical cavity laser diode (VCSEL), an edge-emitting laser, and so on. The term "light source" can also refer to an organic light-emitting diode, such as a passive matrix (PMOLED) or an active matrix (AMOLED). In certain embodiments, the light source includes a solid-state light source (e.g., an LED or laser diode). In one embodiment, the light source includes an LED (light-emitting diode). The term "light source" or "solid-state light source" can also refer to a superluminescent diode (SLED). The term LED can also refer to multiple LEDs. Furthermore, the term "light source" in embodiments can also refer to a so-called chip-on-board (COB) light source. The term "COB" specifically refers to LED chips in the form of semiconductor chips that are neither packaged nor connected, but are directly mounted onto a substrate such as a PCB. Therefore, multiple semiconductor light sources can be configured on the same substrate. In embodiments, a COB is a multi-LED chip configured together as a single lighting module. The term "light source" can also refer to multiple (substantially identical (or different)) light sources, such as 2-2000 solid-state light sources. In embodiments, a light source may include one or more micro-optical elements (microlens arrays) downstream of a single solid-state light source (e.g., an LED) or downstream of multiple solid-state light sources (e.g., shared by multiple LEDs). In embodiments, a light source may include an LED with on-chip optics.In embodiments, the light source comprises pixelated individual LEDs (with or without optics) (providing on-chip beam control in embodiments). In embodiments, the light source can be configured to provide primary radiation, which is used as, for example, a blue light source, such as a blue LED; or a green light source, such as a green LED; and a red light source, such as a red LED. However, in other embodiments, the light source can be configured to provide primary radiation, and a portion of the primary radiation can be converted into secondary radiation. The secondary radiation can be based on the conversion of the luminescent material. Secondary radiation can therefore also be indicated as luminescent material radiation. In embodiments, the luminescent material can be included in the light source, for example, an LED having a layer of luminescent material or a dome including the luminescent material. In other embodiments, the luminescent material can be positioned at a distance from the light source (“far”), for example, an LED having a layer of luminescent material that is not in physical contact with the LED die. Thus, in certain embodiments, the light source can be a source that emits light at least in the wavelength range of 380-470 nm during operation. However, other wavelengths are also possible. Such light can be partially utilized by the luminescent material. In embodiments, the light source can be selected from the group consisting of laser diodes and superluminescent LEDs.

[0011] The term "laser source" specifically refers to a laser. Such a laser can be configured to generate laser light having one or more UV, visible, or infrared wavelengths—especially wavelengths selected from the spectral wavelength range of 200-2000 nm, for example, 300-1500 nm. The term "laser" specifically refers to a device that emits light through an optical amplification process based on stimulated emission of electromagnetic radiation. In particular, in embodiments, the term "laser" may refer to a solid-state laser. In certain embodiments, the term "laser" or "laser source" or similar terms refer to a laser diode (or diode laser).

[0012] Therefore, in the embodiments, the light source includes a laser light source. In the embodiments, the term "laser" or "solid-state laser" may refer to one or more of the following: cerium-doped lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF) laser, chromium-doped chrysoberyl (alexandrite) laser, chromium ZnSe (Cr:ZnSe) laser, divalent samarium-doped calcium fluoride (Sm:CaF2) laser, Er:YAG laser, erbium-doped and erbium-ytterbium co-doped glass laser. F-center laser, holmium YAG (Ho:YAG) laser, Nd:YAG laser, NdCrYAG laser, neodymium-doped yttrium calcium borate (Nd:YCa4O(BO3)3 or Nd:YCOB) laser, neodymium-doped yttrium orthovanadate (Nd:YVO4) laser, neodymium glass (Nd:glass) laser, neodymium YLF (Nd:YLF) solid-state laser, promethium-147-doped phosphate glass (147Pm) 3+Solid-state lasers (glass), ruby ​​lasers (Al2O3:Cr) 3+ ), Thulium YAG (Tm:YAG) laser, Titanium Sapphire (Ti:Sapphire; Al2O3:Ti) 3+ Lasers, trivalent uranium-doped calcium fluoride (U:CaF2) solid-state lasers, ytterbium-doped glass lasers (rods, plates / sheets, and optical fibers), ytterbium YAG (Yb:YAG) lasers, Yb2O3 (glass or ceramic) lasers, etc.

[0013] In the embodiments, the term "laser" or "solid-state laser" may refer to one or more of the following: semiconductor laser diodes (e.g., GaN, InGaN, AlGaInP, AlGaAs, InGaAsP), lead salt lasers, vertical-cavity surface-emitting lasers (VCSELs), quantum cascade lasers, hybrid silicon lasers, etc.

[0014] To achieve shorter (laser) wavelengths, lasers can be combined with up-converters. For example, upconversion can be achieved using some (trivalent) rare-earth ions, or using nonlinear crystals. Alternatively, lasers can be combined with down-converters (such as dye lasers) to achieve longer (laser) wavelengths.

[0015] As will be apparent from the following text, the term "laser source" can also refer to multiple (different or identical) laser sources. In a particular embodiment, the term "laser source" can refer to N (identical) laser sources. In an embodiment, N = 2 or greater. In a specific embodiment, N can be at least 5, for example, especially at least 8. In this way, higher brightness can be obtained. In an embodiment, the laser sources can be arranged in a laser bank (see also above). In an embodiment, the laser bank can include heat sinks and / or optics, such as lenses for collimating the laser.

[0016] A laser source is configured to generate laser light (or "laser"). The light source can consist essentially of laser light. The light source can also include laser light from two or more (different or identical) laser sources. For example, laser light from two or more (different or identical) laser sources can be coupled into a light guide to provide a single beam comprising laser light from two or more (different or identical) laser sources. In a particular embodiment, the light source is therefore, in particular, collimated light. In another embodiment, the light source is, in particular, (collimated) laser light.

[0017] The phrases “different light sources” or “multiple different light sources” and similar phrases in the embodiments may refer to multiple solid-state light sources selected from at least two different bins. Similarly, the phrases “same light source” or “multiple same light sources” and similar phrases in the embodiments may refer to multiple solid-state light sources selected from the same bin.

[0018] The light source is specifically configured to generate light with an optical axis (O), (beam shape), and spectral power distribution. In embodiments, the light source light may include one or more bands having bandwidths known to the laser. In specific embodiments, the band(s) ...

[0019] The beam of light from the source can be a focused or collimated beam of light from the laser source. The term "focused" can specifically refer to converging into a small spot of light. This small spot of light can be in the discrete converter region, or (slightly) upstream or (slightly) downstream of it. In particular, focusing and / or collimation can be performed such that the cross-sectional shape of the beam in the discrete converter region (on the side) (perpendicular to the optical axis) is substantially no larger than the cross-sectional shape of the discrete converter region (where the source light illuminates the discrete converter region) (perpendicular to the optical axis). Focusing can be performed using one or more optical devices—such as (focusing) lenses. In particular, two lenses can be applied to focus the laser source light. Collimation can be performed using one or more (other) optical devices—such as collimating elements, such as lenses and / or parabolic mirrors. In embodiments, the (laser) source beam can be relatively highly collimated, for example, ≤2° (FWHM) in embodiments, more particularly ≤1° (FWHM), and most particularly ≤0.5° (FWHM). Therefore, ≤2° (FWHM) can be considered (highly) collimated light. Optical devices can be used to provide (high) collimation (see also above).

[0020] As described above, the (solid-state) light source is configured to generate light. In an embodiment, this can be one or more of ultraviolet and blue light.

[0021] In a specific embodiment, the (solid-state) light source is functionally coupled to the circuit. Therefore, in particular, the (solid-state) light source is included in the circuit.

[0022] Light-emitting material elements specifically include light-emitting materials. A light-emitting element may include one or more layers and a body. The body may be self-supporting, although this is not mandatory. A light-emitting element may include a host material, such as a polymeric material or a ceramic material, in which the light-emitting material is embedded. A light-emitting element may also be a layer or a host of light-emitting materials, such as, for example, a light-emitting ceramic.

[0023] The term "luminescent material" specifically refers to a material that can convert one or more of a first radiation, particularly UV radiation and blue radiation, into a second radiation. Typically, the first and second radiations have different spectral power distributions. Therefore, instead of the term "luminescent material," the terms "luminescent converter" or "converter" may also be used. Generally, the second radiation has a spectral power distribution at wavelengths greater than the first radiation; this is a case of so-called downconversion. However, in specific embodiments, the second radiation has a spectral power distribution with intensity at wavelengths smaller than the first radiation; this is a case of so-called upconversion.

[0024] In embodiments, "luminescent material" can specifically refer to a material capable of converting radiation into, for example, visible light and / or infrared light. For example, in embodiments, the luminescent material is capable of converting one or more of UV radiation and blue radiation into visible light. In specific embodiments, the luminescent material can also convert radiation into infrared radiation (IR). Therefore, when excited by radiation, the luminescent material emits radiation. Typically, the luminescent material will be a down-converter, i.e., radiation of a smaller wavelength is converted into radiation with a larger wavelength (λ). ex <λ em Although in specific embodiments, the luminescent material may include an up-converter luminescent material, that is, radiation of a larger wavelength is converted into radiation of a smaller wavelength (λ). ex >λ em ).

[0025] In embodiments, the term "luminescence" may refer to phosphorescence. In embodiments, the term "luminescence" may also refer to fluorescence. The term "emission" may also be used instead of "luminescence." Therefore, the terms "first radiation" and "second radiation" may refer to excitation radiation and emission (radiation), respectively. Similarly, the term "luminescent material" in embodiments may refer to phosphorescence and / or fluorescence. The term "luminescent material" may also refer to a variety of different luminescent materials. Examples of possible luminescent materials are shown below.

[0026] In the embodiments, the luminescent material is selected from garnet and nitrides, particularly doped with trivalent cerium or divalent europium, respectively. The term "nitride" may also refer to oxynitrides or nitrogen silicates, etc.

[0027] In a specific embodiment, the luminescent material includes A3B5O. 12Ce-type luminescent materials, wherein A in embodiments comprises one or more of Y, La, Gd, Tb, and Lu, particularly at least one or more of Y, Gd, Tb, and Lu, and wherein B in embodiments comprises one or more of Al, Ga, In, and Sc. Specifically, A may contain one or more of Y, Gd, and Lu, for example, particularly one or more of Y and Lu. Specifically, B may comprise one or more of Al and Ga, more particularly at least Al, for example, substantially all Al. Therefore, cerium-containing garnet materials are particularly suitable luminescent materials. Examples of garnet particularly include A3B5O. 12 Garnet, wherein A comprises at least yttrium or lutetium, and wherein B comprises at least aluminum. This garnet may be doped with cerium (Ce), praseodymium (Pr), or a combination of cerium and praseodymium; however, Ce is particularly preferred. Specifically, B comprises aluminum (Al), however, B may also partially comprise gallium (Ga) and / or scandium (Sc) and / or indium (In), particularly up to about 20% Al, more particularly up to about 10% Al (i.e., the B ion is essentially composed of 90% or more molar ratio of Al and 10% or less molar ratio of one or more of Ga, Sc, and In); B may particularly comprise up to about 10% gallium. In another variant, B and O may be at least partially replaced by Si and N. Element A may particularly be selected from the group consisting of yttrium (Y), gadolinium (Gd), terbium (Tb), and lutetium (Lu). Furthermore, Gd and / or Tb are particularly present only in an amount of up to about 20% of A. In a specific embodiment, the garnet luminescent material includes (Y 1-x Lu x )3B5O 12 :Ce, where x is equal to or greater than 0 and equal to or less than 1. The term ":Ce" indicates that a portion of the metal ions in the luminescent material (i.e., a portion of the "A" ions in garnet) are replaced by Ce. For example, in (Y 1-x Lu x )3Al5O 12 In the case of Ce, a portion of Y and / or Lu is substituted by Ce. This is known to those skilled in the art. Ce will typically substitute no more than 10% of A; generally, the Ce concentration will be in the range of 0.1% to 4%, particularly 0.1% to 2% (relative to A). Assuming 1% Ce and 10% Y, the complete and correct molecular formula might be (Y 0.1 Lu 0.89 Ce 0.01 )3A l5 O 12 As is known to those skilled in the art, Ce in garnet is essentially or only in a trivalent state.

[0028] In the embodiments, the luminescent material (therefore) comprises A3B5O. 12In a specific embodiment, up to 10% of the BO can be replaced by Si-N.

[0029] In a specific embodiment, the luminescent material includes (Y) x1-x2-x3 A' x2 Ce x3 )3(Al yl-y2 B' y2 )5O 12 Where x1 + x2 + x3 = 1, where x3 > 0, where 0 < x2 + x3 ≤ 0.2, where y1 + y2 = 1, where 0 ≤ y2 ≤ 0.2, where A' comprises one or more elements selected from the group consisting of the lanthanides, and where B' comprises one or more elements selected from the group consisting of Ga, In, and Sc. In embodiments, x3 is selected from the range of 0.001-0.1. In particular, x1 > 0, for example > 0.2, such as at least 0.8. Y-containing garnets can provide a suitable spectral power distribution.

[0030] In a specific embodiment, up to 10% of BO can be replaced by Si-N. Here, B in BO refers to one or more of Al, Ga, In, and Sc (and O refers to oxygen); in a specific embodiment, BO can refer to Al-O. As mentioned above, in a specific embodiment, x3 can be selected from the range of 0.001-0.04. In particular, this luminescent material can have a suitable spectral distribution (see below, however), relatively high efficiency, relatively high thermal stability, and allow for high CRI (combining the first light source light and the second light source light (and the filter)). Therefore, in a specific embodiment, A can be selected from the group consisting of Lu and Gd. Alternatively or additionally, B can include Ga. Therefore, in an embodiment, the luminescent material includes (Y x1-x2-x3 (Lu, Gd) x2 Ce x3 )3(Al y1-y2 Ga y2 )5O 12 Wherein Lu and / or Gd may be available. Even more specifically, x3 is selected from the range of 0.001-0.1, where 0 < x2 + x3 ≤ 0.1, and where 0 ≤ y2 ≤ 0.1. Furthermore, in specific embodiments, up to 1% of BO may be replaced by Si-N. Here, percentage refers to molar number (as known in the art); see also, for example, EP3149108. In even more specific embodiments, the luminescent material comprises (Y x1-x3 Ce x3 )3Al5O 12 , where x1+x3=1, and where 0<x3≤0.2, for example 0.001-0.1.

[0031] In a specific embodiment, the light generating device may comprise only a luminescent material selected from the cerium-containing garnet type. In a further specific embodiment, the light generating device comprises a single type of luminescent material, such as (γ-ray disulfide) luminescent material. x1-x2-x3 A' x2 Ce x3 )3(Al y1-y2 B' y2 )5O 12 Therefore, in a specific embodiment, the light generating device includes a light-emitting material, wherein at least 85% by weight, or even more particularly at least about 90% by weight, for example, at least about 95% by weight, of the light-emitting material includes (Y). x1-x2- x3 A' x2 Ce x3 )3(Al y1-y2 B' y2 )5O 12 Here, A' comprises one or more elements selected from the group consisting of the lanthanides, and B' comprises one or more elements selected from the group consisting of Ga, In, and Sc, where x1 + x2 + x3 = 1, where x3 > 0, where 0 < x2 + x3 ≤ 0.2, and where y1 + y2 = 1, where 0 ≤ y2 ≤ 0.2. Specifically, x3 is selected from the range of 0.001 to 0.1. Note that in the embodiments, x2 = 0. Alternatively or additionally, in the embodiments, y2 = 0.

[0032] In a specific embodiment, A may specifically include at least Y, and B may specifically include at least Al.

[0033] In the embodiments, the luminescent material may alternatively or additionally include M2Si5N8:Eu 2+ And / or MAlSiN3:Eu 2+ And / or Ca2AlSi3O2N5:Eu 2+ One or more of the following, wherein M includes one or more of Ba, Sr, and Ca, particularly in embodiments at least Sr. Therefore, in embodiments, the luminescent material may comprise one or more materials selected from the group consisting of (Ba, Sr, Ca)S:Eu, (Ba, Sr, Ca)AlSiN3:Eu, and (Ba, Sr, Ca)2Si5N8:Eu. In these compounds, europium (Eu) is essentially or only divalent and substitutes for one or more of the divalent cations shown. Typically, Eu will not be present in an amount greater than 10% of the cation; its presence is particularly in the range of about 0.5% to 10% relative to the cation(s) it substitutes, more particularly in the range of about 0.5% to 5%. The term ":Eu" indicates that a portion of the metal ion is substituted by Eu (in these examples, Eu is used to replace the metal ion). 2+(Substitution). For example, assuming CaAlSiN3:Eu contains 2% Eu, the correct molecular formula could be (Ca... 0.98 Eu 0.02 AlSiN3. Divalent europium typically substitutes for divalent cations, such as the aforementioned divalent alkaline earth metal cations, particularly Ca, Sr, or Ba. The material (Ba, Sr, Ca)S:Eu can also be represented as MS:Eu, where M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca); particularly, M in this compound includes calcium or strontium, or calcium and strontium, more particularly calcium. Here, Eu is introduced and substitutes for at least a portion of M (i.e., one or more of Ba, Sr, and Ca). Furthermore, the material (Ba, Sr, Ca)2Si5N8:Eu can also be represented as M2Si5N8:Eu, where M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca); particularly, in this compound, M includes Sr and / or Ba. In a further specific embodiment, M consists of Sr and / or Ba (regardless of the presence of Eu), particularly 50 to 100%, more particularly 50 to 90% Ba and 50 to 0%, particularly 50 to 10% Sr, such as Ba. 1.5 Sr 0.5 Si5N8:Eu (i.e., 75% Ba; 25% Sr). Here, Eu is introduced and replaces at least a portion of M (i.e., one or more of Ba, Sr, and Ca). Similarly, the material (Ba, Sr, Ca)AlSiN3:Eu can also be represented as MAlSiN3:Eu, where M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca); in particular, M includes calcium or strontium, or calcium and strontium, more particularly calcium. Here, Eu is introduced and replaces at least a portion of M (i.e., one or more of Ba, Sr, and Ca). In the above-described luminescent materials, Eu is essentially or only in a divalent state, as is known to those skilled in the art.

[0034] In embodiments, the red luminescent material may comprise one or more materials selected from the group consisting of (Ba,Sr,Ca)S:Eu, (Ba,Sr,Ca)AlSiN3:Eu, and (Ba,Sr,Ca)2Si5N8:Eu. In these compounds, europium (Eu) is essentially or only divalent and substitutes for one or more of the divalent cations shown. Typically, Eu will not be present in an amount greater than 10% of the cations; its presence is particularly in the range of about 0.5% to 10% relative to the cation(s) it substitutes, and more particularly in the range of about 0.5% to 5%. The term ":Eu" indicates that a portion of the metal ion is substituted by Eu (in these examples, Eu is used to replace the metal ion). 2+ (Substitution). For example, assuming CaAlSiN3:Eu contains 2% Eu, the correct molecular formula should be (Ca...0.98 Eu 0.02 AlSiN3. Divalent europium usually replaces divalent cations, such as the aforementioned divalent alkaline earth metal cations, especially Ca, Sr, or Ba.

[0035] The material (Ba, Sr, Ca)S:Eu can also be represented as MS:Eu, where M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca); in particular, M contains calcium or strontium, or calcium and strontium, more especially calcium, in the compound. Here, Eu is introduced and replaces at least a portion of M (i.e., one or more of Ba, Sr, and Ca).

[0036] Furthermore, the material (Ba, Sr, Ca)₂Si₅N₈:Eu can also be represented as M₂Si₅N₈:Eu, where M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca); in particular, M in this compound comprises Sr and / or Ba. In further specific embodiments, M consists of Sr and / or Ba (regardless of the presence of Eu), particularly 50 to 100%, more particularly 50 to 90% Ba and 50 to 0%, particularly 50 to 10% Sr, such as Ba 1.5 Sr 0.5 Si5N8:Eu (i.e., 75% Ba; 25% Sr). Here, Eu is introduced and replaces at least a portion of M (i.e., one or more of Ba, Sr, and Ca).

[0037] Similarly, the material (Ba, Sr, Ca)AlSiN3:Eu can also be represented as MAlSiN3:Eu, where M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca); in particular, M contains calcium or strontium, or calcium and strontium, more especially calcium. Here, Eu is introduced and replaces at least a portion of M (i.e., one or more of Ba, Sr, and Ca).

[0038] Eu is essentially or only in a divalent state, as is known to those skilled in the art.

[0039] Blue luminescent materials may include YSO (Y2SiO5:Ce) 3+ ) or similar compounds, or BAM (BaMgAl 10 O 17 Eu 2+ (or similar compounds.)

[0040] The term "luminescent material" here specifically refers to inorganic luminescent materials.

[0041] In addition to the term "luminescent material," there is also the term "phosphor." These terms are known to those skilled in the art.

[0042] Alternatively or additionally, other luminescent materials may be applied. For example, quantum dots and / or organic dyes may be applied and optionally embedded in the transmission matrix, such as polymers, such as PMMA or polysiloxanes, etc.

[0043] Quantum dots are tiny crystals of semiconductor materials, typically only a few nanometers wide or in diameter. When excited by incident light, quantum dots emit light of a color determined by the size and material of the crystal. Therefore, a specific color of light can be produced by adjusting the size of the dot. Most known quantum dots that emit in the visible light range are based on cadmium selenide (CdSe) and have shells such as cadmium sulfide (CdS) and zinc sulfide (ZnS). Cadmium-free quantum dots, such as indium phosphide (InP) and copper indium sulfide (CuInS2) and / or silver indium sulfide (AgInS2), can also be used. Quantum dots exhibit very narrow emission bands, and therefore they display saturated colors. Furthermore, the emission color can be easily tuned by adjusting the size of the quantum dot. Any type of quantum dot known in the art can be used in this invention. However, for environmental safety and considerations, cadmium-free quantum dots or at least quantum dots with very low cadmium content are preferred.

[0044] Other quantum confinement structures can be used instead of quantum dots, or in addition to quantum dots. In the context of this application, the term "quantum confinement structure" should be understood to include, for example, quantum wells, quantum dots, quantum rods, three-branch structures, four-pronged pins, or nanowires.

[0045] Organic phosphors can also be used. Examples of suitable organic phosphor materials include perylene derivative-based organic light-emitting materials, such as those from BASF under the name... Compounds for sale. Examples of suitable compounds include, but are not limited to, Red F305 Orange F240 Yellow F083 and F170.

[0046] Different luminescent materials can have different spectral power distributions of their own luminescent light. Alternatively or additionally, these different luminescent materials can have different color points (or dominant wavelengths).

[0047] As mentioned above, other luminescent materials are also possible. Therefore, in a specific embodiment, the luminescent material is selected from the group consisting of europium-containing nitrides, europium-containing oxynitrides, europium-containing silicates, cerium-containing garnets, and quantum structures. Quantum structures may, for example, include quantum dots or quantum rods (or other quantum types of particles) (see above). Quantum structures may also include quantum wells. Quantum structures may also include photonic crystals.

[0048] In a specific embodiment, the luminescent material may be configured to convert at least a portion of the (solid-state) light source into luminescent material light having one or more wavelengths selected from green, yellow, orange, and red. However, alternatively or additionally, the luminescent material may be configured to convert at least a portion of the (solid-state) light source into luminescent material light having one or more infrared wavelengths.

[0049] The term "violet light" or "violet emission" specifically refers to light with wavelengths in the range of approximately 380-440 nm. The term "blue light" or "blue emission" specifically refers to light with wavelengths in the range of approximately 440-495 nm (including some violet and cyan hues). The term "green light" or "green emission" specifically refers to light with wavelengths in the range of approximately 495-570 nm. The term "yellow light" or "yellow emission" specifically refers to light with wavelengths in the range of approximately 570-590 nm. The term "orange light" or "orange emission" specifically refers to light with wavelengths in the range of approximately 590-620 nm. The term "red light" or "red emission" specifically refers to light with wavelengths in the range of approximately 620-780 nm. The term "pink light" or "pink emission" refers to light with blue and red components. The term "cyan" can refer to one or more wavelengths selected from the range of approximately 490-520 nm. The term "amber" can refer to one or more wavelengths selected from the range of about 585-605 nm (e.g., about 590-600 nm).

[0050] In this document, UV (ultraviolet light) may specifically refer to wavelengths selected from the 190-380 nm range, although other wavelengths may be possible in specific embodiments.

[0051] In this document, IR (infrared) may specifically refer to radiation having wavelengths selected from the range of 780-3000 nm, such as 780-2000 nm, such as wavelengths up to about 1500 nm, such as wavelengths of at least 900 nm, although other wavelengths are possible in specific embodiments. Therefore, the term IR may refer herein to near-infrared (NIR (or IR-A)) and short-wavelength infrared (SWIR (or IR-B)), particularly one or more of NIR.

[0052] As described above, the light-emitting material element can be specifically configured to receive light from a (solid-state) light source. Furthermore, the light-emitting material is specifically configured to convert at least a portion of the light from the light source into light emitting material light. Therefore, the light-emitting material can be disposed downstream of the (solid-state) light source.

[0053] The terms "radiative coupling" or "optical coupling" can specifically mean (i) a light-generating element, such as a light source, and (ii) another article or material, associated with each other such that at least a portion of the radiation emitted by the light-generating element is received by the article or material. In other words, the article or material is configured to be in a light-receiving relationship with the light-generating element. The article or material will receive at least a portion of the radiation from the light-generating element. In embodiments, this can be direct, such as the article or material being in physical contact with the light-emitting surface of the light-generating element. In embodiments, this can be via a medium, such as air, gas, or a liquid or solid light-guiding material. In embodiments, one or more optical devices, such as lenses, reflectors, or filters, can also be arranged in the optical path between the light-generating element and the article or material. As mentioned above, the term "in a light-receiving relationship" does not exclude the presence of intermediate optical elements, such as lenses, collimators, reflectors, dichroic mirrors, etc. In embodiments, the terms "light-receiving relationship" and "downstream" can be substantially synonymous.

[0054] The terms “upstream” and “downstream” refer to the arrangement of items or features relative to the propagation of light from a light generating device (here, in particular, a first light source), wherein a second position within the beam closer to the light generating device is “upstream” relative to a first position within the beam from the light generating device, and a third position within the beam further away from the light generating device is “downstream”.

[0055] In a specific embodiment, for example, the light source of a laser can be directed onto the light-emitting material element such that specular reflection of the light source at the light-emitting material element will substantially prevent it from propagating to the end window of the system along with the light-emitting material light. For example, in an embodiment, the end window (or light exit window) of the system can be configured at an angle of, for example, 90° relative to the light-emitting material light propagating to the end window. For example, the optical axis of the light source upstream of the light-emitting material element and the direction of the light-emitting material light propagating from the light-emitting material element to the end window can be defined by an angle α selected from the range of 20-160°, such as selected from the range of 35-145°.

[0056] Furthermore, the lighting system may specifically include sensor components. In particular, the sensor elements may be included in the circuitry.

[0057] In one embodiment, the circuit can be configured such that the power supplied to the laser via the circuit, depending on the resistance of the sensor components, is controlled.

[0058] In a specific embodiment, the sensor element may include a sensor element selected from the group consisting of (i) radiation-sensitive elements and (ii) heat-sensitive elements.

[0059] Furthermore, in specific embodiments, the sensor element can be configured from a selection of the group consisting of: (a) being in a light-receiving relationship with a light-emitting material; (b) being in a light-receiving relationship with a laser; and (c) being in a heat-absorbing relationship with a light-emitting material.

[0060] Specifically, in the embodiments, one or more of (i) the intensity of the light received by the sensor element, (ii) the intensity of the laser received by the sensor element, and (iii) the heat sensed by the sensor element may depend on the presence or absence of at least a predetermined portion of the functional components in the light generation system, wherein the functional components are selected from the group including the light-emitting material element and the optical component.

[0061] In a specific embodiment, the sensor element may include a sensor component, wherein the sensor component is included in a circuit.

[0062] Specifically, in embodiments, the sensor component may include one or more of the following: (a) a photoresistor configured to receive light selected from the group consisting of laser light and light from luminescent materials, wherein the photoresistor has a variable resistance depending on the degree of exposure to light; and (b) a thermistor configured to receive heat from functional components included in the light generation system, wherein the thermistor has a variable resistance depending on the degree of heat received.

[0063] In a specific embodiment, the sensor component may include one or more of a negative temperature coefficient resistor, a positive temperature coefficient resistor, a light-correlated resistor, and a bimetallic switch. Furthermore, the sensor component may be configured to increase or decrease its resistance in the circuit depending on one or more of the degree of light exposure and the degree of heat received.

[0064] Therefore, in one aspect, the present invention provides a light generation system comprising a solid-state light source, a light-emitting material element, a sensor element, and circuitry, wherein: (a) the solid-state light source is configured to generate light source light, wherein the solid-state light source is functionally coupled to the circuitry; (b) the light-emitting material element comprises a light-emitting material, wherein the light-emitting material element is configured to be in a light-receiving relationship with the solid-state light source, and wherein the light-emitting material is configured to convert at least a portion of the light source light into light-emitting material light; and (c) the sensor element comprises a sensor component, wherein the sensor element is included in the circuitry, wherein the sensor component comprises a thermistor having a variable resistance that depends on the degree of exposure to heat caused by one or more of the following (in, for example, the functional component): laser light, light-emitting material light, and heat generated in the light-emitting material element (due to the conversion of the light source light into light-emitting material light).

[0065] In particular, such a system may also include a switch (or “switching element”) that prevents power from being supplied to the light source after a reduction in power supply due to a change in resistance of sensor components such as one or more photoresistors and thermistors, unless, for example, a reset is performed.

[0066] Therefore, in a specific embodiment, the sensor component may include a photoresistor configured to receive light selected from the group consisting of laser light and light from luminescent materials, wherein the photoresistor has a variable resistance depending on the degree of exposure to light. However, in a specific embodiment, the sensor component includes a photoresistor having a variable resistance that depends on the degree of exposure to light selected from the group consisting of laser light and light from luminescent materials.

[0067] For example, this could imply that when the system is operating normally, the sensor components do not receive light, such as light from a solid-state light source or a light-emitting material. However, when a functional component, such as a light-emitting element or an optical element, is damaged, broken, or at least partially removed, the sensor components can receive light. The resistance can then change.

[0068] For example, this could alternatively (or additionally) imply that when the system is operating normally, the sensor components receive light, such as light from a solid-state light source or a light-emitting material. However, when functional components, such as light-emitting elements or optical elements, are damaged, broken, or at least partially removed, the sensor components may no longer receive light, or may receive light with reduced intensity. The resistance can then change.

[0069] For example, this may alternatively (or additionally) imply that when the system is operating normally, the sensor component receives light, such as solid-state light or light from a luminescent material. However, when a functional component, such as a luminescent element or optical element, is damaged, broken, or at least partially removed, the sensor component may receive light of increased intensity. The resistance may then change. Therefore, as described above, in the embodiments, one or more of (i) the intensity of the luminescent material light received by the sensor element and (ii) the intensity of the laser light received by the sensor element may depend on the presence and absence of at least a predetermined portion of the functional components in the light generation system.

[0070] Therefore, in particular embodiments, the lighting system may include a sensor component, wherein the sensor element is included in a circuit, wherein the sensor component includes a photoresistor, and wherein the photoresistor has a variable resistance that depends on the degree of exposure to light selected from the group consisting of laser light and light from luminescent materials.

[0071] In particular, in an embodiment, the sensor component may be configured to increase or decrease its resistance in the circuit depending on one or more of the degree of exposure to light and the degree of heat received.

[0072] In a specific embodiment, the photoresistor can be configured within a beam dump. In a specific embodiment, the beam dump can be a recess or a cavity. Specifically, in an embodiment, the beam dump can include a light-absorbing material for laser light, such as a black material (e.g., a material with a black coating). This can improve safety. Therefore, in a specific embodiment, the photoresistor can be configured within a recess or cavity of the beam dump.

[0073] Specifically, in the embodiments, the luminescent material element is configured to be located away from the solid-state light source. In this document, the term "away" can refer to the distance between the luminescent material element and the luminescent surface (e.g., the die), and the solid-state light source, such that there is essentially no physical contact. Furthermore, there can also be essentially no thermal contact. Therefore, the minimum distance can be approximately the wavelength of interest, such as the centroid wavelength of the light from the light source or the centroid wavelength of the light from the luminescent material, particularly at least the larger of the two. The wavelength of interest can particularly be the centroid wavelength of the light emitted by the luminescent material.

[0074] The term "centroid wavelength," also denoted as λc, is known in the art and refers to a wavelength value in which half of the light energy is located at wavelengths shorter than that value and half at wavelengths longer than that value; this value is measured in nanometers (nm). This wavelength divides the integral of the spectral power distribution into two equal parts, as expressed by the formula λc = ∑λ*I(λ) / (∑I(λ), where the sum is over the wavelength of interest, and I(λ) is the spectral energy density (i.e., the integral of the product of wavelength and intensity over the emission band normalized to the integral intensity). The centroid wavelength can be determined, for example, under operating conditions.

[0075] When the luminescent material is at a distance, the luminescent element and the light source can be thermally decoupled. However, this is not always the case. Furthermore, by utilizing the distant placement of the luminescent material, the thermal management of the luminescent element can be relatively easier.

[0076] However, in specific embodiments, the light-emitting material element can be in physical contact with the light-emitting surface of the (solid-state) light source.

[0077] As described above, in specific embodiments, the solid-state light source includes one or more of a laser diode and a superluminescent diode. Specifically, the solid-state light source may include a laser diode, which may have a narrower emission band than a superluminescent diode.

[0078] In a specific embodiment, the sensor component can be configured to reduce resistance as the intensity of the light source increases. In particular, in such an embodiment, the sensor component can be configured in parallel with a solid-state light source.

[0079] In a specific embodiment, the sensor component can be configured to increase resistance as the intensity of the light source increases. In particular, in such an embodiment, the sensor component is configured to be connected in series with a solid-state light source.

[0080] The system can also include multiple sensor components. This allows for safety precautions to be taken for different probabilities of failure.

[0081] In a specific embodiment, the light-emitting material element can be configured in a transmission mode, and the sensor component is configured downstream of the light-emitting material element.

[0082] In alternative embodiments, the light-emitting material element may be configured in a reflection mode. Specifically, in the embodiments, the following may be applied: (i) a sensor component may be configured downstream of the light-emitting material element and may be configured to receive at least a portion of the light reflected at the light-emitting material element; or (ii) the sensor component may be configured to receive light in the absence of a predetermined portion of the light-emitting material element and may be configured not to receive light or to receive light with reduced intensity in the presence of a predetermined portion of the light-emitting material element.

[0083] For example, assuming there is a hole in the light-emitting element, light from the (solid-state) light source can propagate through the hole and reach the sensor component. However, in some embodiments, a reflective layer may also be present behind the light-emitting element. In such embodiments, the reflection of the (solid-state) light source may become stronger when the hole is present. This change in reflection may cause a change in the resistance of the sensor component. Furthermore, depending on the angle of the sensor component relative to the light-emitting element, the hole may induce a higher intensity of laser or luminescent material light on the sensor due to reflection at the light-emitting element.

[0084] In a specific embodiment, the sensor component can be configured to reduce resistance as the intensity of light from the luminescent material increases, wherein the sensor component can be configured to be connected in series with a solid-state light source.

[0085] In a specific embodiment, the sensor component can be configured to increase resistance as the intensity of light from the luminescent material increases, wherein the sensor component is configured to be connected in parallel with a solid-state light source.

[0086] In a specific embodiment, the sensor component may be configured to receive stray light from one or more of a solid-state light source and a luminescent material. In an alternative embodiment, a portion of the light from the luminescent material may be directed away from the main beam and directed toward the sensor component.

[0087] As mentioned above, the system can also include multiple sensor components. This allows for safety precautions to be taken for different probabilities of failure.

[0088] In a specific embodiment, the functional component may include a light-emitting element, wherein the sensor component may include a thermistor, and wherein the sensor component may be thermally coupled to the light-emitting element. In another specific embodiment, the functional component may include an optical component, wherein the sensor component includes a thermistor, and wherein the sensor component may be thermally coupled to the optical component. Specifically, in an embodiment, the sensor component may be configured to reduce its resistance upon receiving increased heat, wherein the sensor component may be configured to be connected in series with a solid-state light source, or wherein the sensor component may be configured to increase its resistance upon receiving increased heat, wherein the sensor component may be configured to be connected in parallel with a solid-state light source.

[0089] In an embodiment, the sensor component may be configured to irreversibly change its resistance. For example, due to further or other damage to the phosphor and / or further or other damage to (another) optical component, the reversible resistance of the sensor component may incidentally cause an increase in the power of the solid-state light source, which may be undesirable. Therefore, the change in resistance may be irreversible. For example, it may be necessary to replace the sensor component (and potentially damaged functional components).

[0090] In one embodiment, the power received by the (solid-state) light source can be reduced. However, in other embodiments, the power received by the (solid-state) light source can be turned off. Therefore, in a specific embodiment, the circuit can be configured such that, depending on the resistance of the sensor element, the sensor element terminates the power supplied to the solid-state light source via the circuit. For example, in an embodiment, the light generation system may further include circuit components selected from the group consisting of relays and solid-state switches, wherein the circuit components are configured such that, depending on the resistance of the sensor element, the circuit components terminate the power supplied to the solid-state light source via the circuit. The solid-state switch may include a MOSFET switch or another similar semiconductor switch device. In particular, the circuit components may include such a semiconductor switch device, such as a MOSFET.

[0091] In a specific embodiment, the system may include a control unit configured to prevent the solid-state light source from automatically restarting after an event in which the sensor element has ceased supplying power to the solid-state light source. Specifically, this control unit is not necessarily software-based but may be substantially based on electrical components, including hardware switches.

[0092] As described above, the system can include multiple sensor elements configured at different locations within the light generation system. This can further enhance security.

[0093] In one operating mode, the system can be configured to generate white system light. In other embodiments, in another operating mode, the system can be configured to generate colored light. In yet another operating mode, the system can be configured to generate infrared radiation.

[0094] The term "white light" is known to those skilled in the art herein. It specifically refers to light having a correlated color temperature (CCT) between approximately 1800K and 20000K, for example, between 2000 and 20000K, particularly 2700-20000K, for general illumination, especially in the range of approximately 2700K to 6500K. In embodiments, for backlighting purposes, the correlated color temperature (CCT) can particularly be in the range of approximately 7000K to 20000K. However, further, in embodiments, the correlated color temperature (CCT) is particularly within approximately 15 SDCM (standard deviation of color matching) from the BBL (blackbody track), particularly within approximately 10 SDCM from the BBL, and even more particularly within approximately 5 SDCM from the BBL.

[0095] The terms “visible,” “visible light,” or “visible emission,” and similar terms, refer to light having one or more wavelengths in the range of about 380–780 nm. In this document, UV may specifically refer to wavelengths selected from the range of 200–380 nm.

[0096] The terms “light” and “radiation” are used interchangeably herein unless the context clearly indicates that the term “light” refers only to visible light. The terms “light” and “radiation” can therefore refer to UV radiation, visible light, and IR radiation. In specific embodiments, particularly for lighting applications, the terms “light” and “radiation” refer to (at least) visible light.

[0097] The term "control" and similar terms specifically refer at least to determining the behavior of an element or supervising the operation of an element. Therefore, "control" and similar terms as used herein can refer, for example, to applying behavior to an element (determining behavior or supervising the operation of the element), such as, for example, measuring, displaying, actuating, turning on, moving, changing temperature, etc. In addition, the term "control" and similar terms can additionally include monitoring. Therefore, the term "control" and similar terms can include applying behavior to an element, as well as applying behavior to an element and monitoring the element. Control of the element can be accomplished using a control system, which can also be indicated as a "controller." Therefore, the control system and the element can be functionally coupled, at least temporarily or permanently. The element can include a control system. In embodiments, the control system and the element may not be physically coupled. Control can be accomplished via wired and / or wireless control. The term "control system" can also refer to multiple different control systems, which are particularly functionally coupled, and one of these control systems may be a master control system, and one or more other control systems may be subordinate control systems. The control system may include or may be functionally coupled to a user interface.

[0098] The system, apparatus, or device can perform actions in a “mode,” “operating mode,” or “mode of operation.” Similarly, in a method, an action, stage, or step can be performed in a “mode,” “operating mode,” “mode of operation,” or “operable mode.” The term “mode” can also indicate “control mode.” This does not preclude the system, apparatus, or device from being adapted to provide another control mode, or multiple other control modes. Likewise, this does not preclude the possibility of performing one or more other modes before and / or after performing this mode.

[0099] The light generating system may be, for example, part of, or incorporated into office lighting systems, home lighting systems, shop lighting systems, residential lighting systems, accent lighting systems, spotlight lighting systems, theater lighting systems, fiber optic applications, projection systems, self-emissive display systems, pixelated display systems, segmented display systems, warning sign systems, medical lighting applications, directional sign systems, decorative lighting systems, portable systems, motor vehicle applications, (outdoor) road lighting systems, urban lighting systems, greenhouse lighting systems, horticultural lighting, digital projection, or LCD backlighting. The light generating system (or illuminator) may also be, for example, part of, an optical communication system or a disinfection system.

[0100] In another aspect, the present invention also provides a lamp or illuminator comprising a light generating system as defined herein. The illuminator may further include a housing, optical elements, blinds, etc. The lamp or illuminator may further include a housing encapsulating the light generating system. The lamp or illuminator may include a light window or housing opening in the housing through which system light can escape from the housing. In yet another aspect, the present invention also provides a projection device comprising a light generating system as defined herein. In particular, a projection device, or “projector” or “image projector,” can be an optical device that projects an image (or a moving image) onto a surface, such as a projection screen. The projection device may include one or more light generating systems, such as those described herein. Therefore, in one aspect, the present invention also provides a light generating device selected from the group consisting of lamps, illuminators, projector devices, disinfection devices, and optical wireless communication devices, comprising a light generating system as defined herein.

[0101] In the embodiments, (i) the sensor component can be configured to reduce resistance when the intensity of the light source increases, wherein the sensor component is configured to be connected in parallel with the solid-state light source; (ii) the sensor component can be configured to increase resistance when the intensity of the light source increases, wherein the sensor component is configured to be connected in series with the solid-state light source; (iii) the sensor component can be configured to reduce resistance when the intensity of the light emitting material increases, wherein the sensor component is configured to be connected in series with the solid-state light source; and / or (iv) the sensor component can be configured to increase resistance when the intensity of the light emitting material increases, wherein the sensor component is configured to be connected in parallel with the solid-state light source.

[0102] In one embodiment, the light source may include a laser light source, and the circuitry is configured such that a change in the resistance of a photoresistor causes a decrease in the current and / or voltage of the laser light source, thereby dimming or turning off the laser light source.

[0103] In an embodiment, one or more of (i) the intensity of the light emitted by the luminescent material received by the sensor element and (ii) the intensity of the laser light received by the sensor element may depend on the presence or absence of at least a predetermined portion of the functional components in the light generation system, wherein the functional components are selected from the group including the luminescent material element and the optical components.

[0104] In an embodiment, when (iii) the sensor component can be configured to reduce resistance when the intensity of the light emitted by the luminescent material increases, and wherein the sensor component is configured to be connected in series with a solid-state light source, the sensor component is also configured to increase resistance when the intensity of the light emitted by the luminescent material decreases; and / or when (iv) the sensor component can be configured to increase resistance when the intensity of the light emitted by the luminescent material increases, and wherein the sensor component is configured to be connected in parallel with a solid-state light source, the sensor component is configured to reduce resistance when the intensity of the light emitted by the luminescent material decreases.

[0105] In one embodiment, the sensor component can be configured to reversibly change its resistance. Attached Figure Description

[0106] Embodiments of the invention will now be described by way of example only, with reference to the accompanying schematic drawings, in which corresponding reference numerals indicate corresponding parts, and in the drawings:

[0107] Figures 1a-1b Some aspects are depicted schematically;

[0108] Figures 2a-2g Some embodiments and variations are schematically depicted; and

[0109] Figure 3 Some possible applications are illustrated schematically.

[0110] The schematic diagrams are not necessarily to scale. Detailed Implementation

[0111] Figure 1a An embodiment of system 1000 is schematically depicted. Figure 1b A circuit 500 with multiple variations is schematically depicted. System 1000 and circuit 500 will be discussed further below.

[0112] Figure 1a An embodiment of a light generation system 1000 is schematically depicted. System 1000 includes a solid-state light source 100, a light-emitting material element 210, a sensor element 400, and circuitry 500. The solid-state light source 100 includes one or more of a laser diode and a superluminescent diode. In this embodiment, other light sources besides solid-state light sources are also possible.

[0113] Solid-state light source 100 is configured to generate light source light 101, wherein solid-state light source 100 is functionally coupled to circuit 500.

[0114] The light-emitting material element 210 includes a light-emitting material 200. The light-emitting material element 210 is configured to receive light from the solid-state light source 100. The light-emitting material 200 is configured to convert at least a portion of the light from the light source 101 into light-emitting material light 201.

[0115] System 1000 is configured to generate system light 1001 during operation mode. Specifically, during operation mode, system light 1001 includes a light-emitting material lamp 201.

[0116] Sensor element 400 may include sensor component 410. Sensor element 400 is included in circuit 500. Sensor component 410 may include a photoresistor. The photoresistor has a variable resistance that depends on the degree of exposure to light 11 selected from the group consisting of laser 100 and light 201 from luminescent material.

[0117] As schematically depicted, the light-emitting material element 210 can be configured to be located away from the solid-state light source 100.

[0118] The sensor component 410 can be configured to increase or decrease the resistance of the sensor component 410 in the circuit 500 depending on one or more of the degree of exposure to light 11 and the degree of heat received.

[0119] Specifically, refer to Figure 1b In one embodiment, sensor component 410 can be configured to reduce resistance when the intensity of light source 101 increases, wherein the sensor component is configured to be connected in parallel with solid-state light source 100. In another embodiment, sensor component 410 can be configured to increase resistance when the intensity of light source 101 increases, wherein the sensor component is configured to be connected in series with solid-state light source 100.

[0120] refer to Figure 1a The light-emitting material element 210 is configured in a transmission mode. In such an embodiment, the sensor component 410 can be configured downstream of the light-emitting material element 210.

[0121] Alternatively, in an embodiment, the light-emitting material element 210 is configured in a reflection mode. In such an embodiment, the following can be applied: (i) the sensor component 410 is configured downstream of the light-emitting material element 210 and is configured to receive at least a portion of the light source light 101 reflected at the light-emitting material element 210, or (ii) the sensor component 410 can be configured to receive the light source light 101 in the absence of a predetermined portion of the light-emitting material element 210, and to not receive the light source light 101 or receive light source light 101 with reduced intensity in the presence of a predetermined portion of the light-emitting material element 210.

[0122] In one embodiment, the sensor component can be configured to decrease resistance as the intensity of the light from the luminescent material increases, wherein the sensor component is configured to be connected in series with a solid-state light source. In other embodiments, the sensor component can be configured to increase resistance as the intensity of the light from the luminescent material increases, wherein the sensor component is configured to be connected in parallel with a solid-state light source. For example, this could be the case when the luminescent material operates in reflective mode, and the sensor component is positioned behind the luminescent material element, and can receive only the laser light or the increased laser intensity when the luminescent material element may be damaged.

[0123] In an embodiment, the sensor component may be configured to receive stray light from one or more of a solid-state light source and a luminescent material.

[0124] In one embodiment, the sensor component 410 may be configured to irreversibly change its resistance.

[0125] refer to Figures 1a-1b The light generation system 1000 may include multiple sensor elements 400 configured at different locations within the light generation system 1000.

[0126] In particular, embodiments of the invention may provide a circuit having an element that changes resistance (which may be a change caused by heat or light) upon exposure to laser. This element can be positioned such that it is not exposed under normal operating conditions but will be exposed to direct laser light in the event of a fault. In an alternative configuration, the element can be positioned such that it is exposed to converted laser light under normal conditions and is not exposed in the event of a fault. The circuit can be designed such that the change in resistance causes a decrease in the current and / or voltage of the laser, which then dims or shuts off, thereby preventing unsafe conditions caused by uncontrolled irradiation of the high-intensity laser from escaping from the system into the surrounding environment.

[0127] In embodiments, elements that reduce resistance when exposed to a laser beam can be used. Examples include optically correlated resistors (LDRs) or negative temperature coefficient resistors (NTCs), placed in the optical path after optical elements such as phosphors or beam-shaping lenses or reflectors. In the circuit, this component is connected in parallel with one or more laser devices.

[0128] refer to Figure 2a Under normal operation, this part of the circuit is exposed to a specific light intensity that does not affect the resistance, and it functions normally. When the optical component fails, such as the phosphor shown in the figure (but this also applies to other optical components in the system), the resistor may be exposed to direct laser light. In this case, the resistance may drop due to light scattering (LDR) or resistor heating (NTC).

[0129] When the resistance decreases, more current flows through the resistor portion of the circuit, resulting in the laser receiving less current and power, and it will dim or turn off when the power falls below a threshold. For a 5W blue laser driven at 3.5A and 4.5V, the laser operates normally when R > 50Ω, and turns off when R < 2Ω.

[0130] In embodiments of the described configuration, turning off the laser can be reversible: once the flux or temperature decreases, the resistive element will increase its resistance again, and the laser will turn back on. Therefore, in these configurations, a control mechanism may be needed to prevent the laser from turning on again after being turned off. When such a control mechanism is absent, oscillating behavior may occur: when the laser dims or turns off, the resistor is no longer exposed, so the current increases, and the laser will be powered on again; when it is powered on, the resistor is exposed again, and so on. This control mechanism could be a simple feature that shuts down the driver once the current drops below a certain level and requires (manual) reset or on.

[0131] In other embodiments, a component that increases resistance when exposed to a laser beam can be used. Examples include a positive temperature coefficient resistor (PTC) or a bimetallic switch in thermal contact with, for example, a phosphor or phosphor support, placed in the optical path after an optical element such as a phosphor or beam-shaping lens or reflector. In the circuit, this component is connected in series with one or more laser devices. This effect and the dimming / switching of the laser can be reversible, for example, by increasing the resistance of the PTC or by turning on the circuit via the bimetallic switch: in these cases, a control mechanism is required to prevent the laser from turning back on (as described in the embodiments above).

[0132] Under normal operation, this part of the circuit is exposed to a specific light intensity that does not affect the resistance and operates normally, similar to the parallel circuit with resistance-reducing elements described in the above embodiments. When an optical element fails, such as the phosphor shown in the figure (but this also applies to other optical elements in the system), the resistor or bimetallic switch is exposed to direct laser light. In this case, the resistance increases or an open circuit is created due to the heating element.

[0133] When the resistance increases, the voltage drop across the resistor portion of the circuit increases, resulting in the laser receiving less voltage and power, and dimming or turning off when the power falls below a threshold. For a 5W blue laser driven at 3.5A and 4.5V, the situation is as follows: when R < 0.2Ω, the laser operates normally, and when R > 1.2Ω, the laser turns off.

[0134] Regarding the device's response speed, note that zero-ohm resistors, for example, are sold in various form factors and sizes. Examples may use, for instance, small SMT / SMD resistors, such as the 0603: its dimensions are 1.55 × 0.85 × 0.28 mm = 0.4 mm. 3 = ~1mg of material. Specific heat capacity of the material, 0.1-1J / g for metals. -1 K -1 The glass has a strength of 0.8-1 Jg. -1 K -1 The organic material content is 2.2-2.5 Jg. -1 K -1 Assume the worst-case resistance is 2.5 Jg. -1 K -1 =2.5*10 -3 Jg -1 K -1 .

[0135] For a 3-5W laser, when the phosphor fails, all the laser power will reach the resistor. Assuming a moderate absorption of 20-35% in the resistor, this means a power of 1W is applied across it. 1W of power will raise the temperature of 1mg of material by 100K in 0.25 seconds. When the absorbed power is 2W and the specific resistance is 1.0Jg... -1 K -1 At that time, the heating time of 1 mg to 100 K was only 50 ms.

[0136] Regarding the reliability of components and methods, it is noted that SMT (Surface Mount Technology) and leaded resistors are standard components used in PCB assemblies, and their lifespan / reliability meets PCB quality requirements. The effect is also reliable: the components can be well aligned and positioned relative to the (unconverted) laser beam, ensuring that the laser beam heats the resistor. The characteristics of the resistor depend on its type. An example of a Murata thermistor shows at least two orders of magnitude resistance change when heated from 20°C (room temperature) to 120°C. Two orders of magnitude are typically sufficient to cut off the laser power supply, and this can be achieved over a temperature increase range of 40°C.

[0137] As an extension of the examples described in some of the above embodiments, an irreversible change in resistance can be achieved by using sacrificial components such as fuses or zero resistors, which will be damaged and cause an open circuit upon direct exposure to a laser.

[0138] Generally, if laser light is absorbed by a surface, it generates a significant amount of heat locally. Therefore, a simple 0Ω fuse or wire can be connected in series with the laser's current-carrying circuit. In the event of a phosphor failure or other faults at critical points in the system (e.g., a broken beam steering mirror), this "melted fuse" will be irradiated by the laser, heated, and melted, shutting down the laser before it is emitted into the surrounding environment. This approach can be applied to critical locations along the entire optical path that are susceptible to light emission into the environment, in case of specific component failure. Since the open circuit is irreversible, no additional switches or electronics are needed to prevent the system from restarting after it has cooled down.

[0139] In one embodiment, the sacrificial resistor can be made of a thin layer of aluminum. A layer 35 μm thick, 300 μm wide, and 10 mm long has a resistance of 25 mΩ. This may be low enough for normal operation.

[0140] When a malfunction occurs, the track is exposed to unconverted laser light. For estimation purposes, let's assume an absorption of 1W power for a 3-5W laser source. Assuming a 500μm laser spot, exposing a 300×500μm area of ​​Al, the exposure is 0.014mg Al. The specific heat capacity of aluminum is 0.897J·g. -1 K -1 This means that heating 0.014 mg of Al to 1000 K may take 13 ms. This may be enough to melt Al (melting point 933 K) and break the circuit. When the Al orbital is 70 μm thick and 500 μm wide, with an initial resistance of 8 mΩ, the time required to heat the point to 1000 K is 43 ms.

[0141] In the above embodiments, the resistance-changing element is placed after one or more optical components in the optical path. Alternatively, the resistance-changing element can be combined with a reflective element after the optical components and placed near the laser. The advantage is further simplification of the electrical layout, and the absence of electrical components in the optical path. See also Figure 2b .

[0142] In another configuration, a resistance-changing element (e.g., an LDR) that reduces resistance upon exposure to light is placed in series with the laser source. In the example described here, the resistive element is exposed to converted light from a phosphor. Alternatively, the element may be exposed to redistributed laser or converted light after an optical element in the system.

[0143] Under normal operation, the resistance-changing element is exposed to the converted light and therefore has low resistance. When the phosphor is damaged, no converted light reaches the resistance element, the resistance increases, and therefore the voltage on the laser drops, causing the laser to dim or shut down.

[0144] It is beneficial to have an additional switching element in the circuit to facilitate laser startup because the resistive element still has a high resistance value during startup. During startup, the switch will be set to position 1, directly connecting the laser to the power supply. When light is emitted, converted light is generated, and the resistance value of R decreases, the switch will move to position 2, connecting the laser and resistor in series to the power supply. See also Figure 2c In the event of a malfunction, no converted light reaches the resistive element, causing the resistance to rise and the voltage across the laser to drop. This results in the laser dimming or shutting off completely. The resistance variation range required to achieve the desired effect is the same as those described in Example 2 above. The circuit should be designed to keep the switch in position 2. Only a (manual) reset or restart can set the switch back to position 1, after which the laser can be powered on again.

[0145] exist Figure 2d In the schematic diagram, the resistive element is placed after the conversion or beam shaping element in the optical path. In an alternative configuration, the resistive element may be placed in another location, taking advantage of the fact that the converted light radiates in all directions, or by using optical components to reflect the light toward the resistive element (as described in some of the above embodiments).

[0146] refer to Figure 2e The laser current can be controlled via a (solid-state) relay circuit. The relay is powered via an LDR, PTC, or NTC, and one of its own contacts. When the resistance increases or decreases, the relay trips, interrupting the current. This only occurs after a reset switch is pressed. Advantages: Simple circuitry; low current through the PTC / NTC means low power loss during operation.

[0147] This invention provides a resistor-based safety circuit that is easy to configure and robust.

[0148] When we incorporate a control system, security protection for this configuration can be based on photoelectric sensors, controllers, and electrical connections. However, security protection based on resistive elements may only require rewiring in the circuitry and dedicated resistors between the phosphor and the optics / front panel.

[0149] Resistor-based solutions may require fewer and cheaper components than photoelectric sensor-based solutions. Furthermore, this solution offers intrinsic safety: the circuitry is disconnected or altered in a way that cuts off the laser's power supply, and therefore the laser will stop emitting. This is independent of the rest of the circuitry, so even if these components (e.g., internally within the driver) fail, no power is supplied to the laser, and no laser light escapes from the system. In the case of photoelectric sensors and control circuitry, failures in the photoelectric sensor, control circuitry, and power supply while the laser is still powered can lead to unsafe conditions (in principle, this could happen under specific circumstances because the circuitry between the power supply and the laser remains intact).

[0150] The implementation can be a separate component, or the laser, phosphor, and protection resistor can be combined into a single package (e.g., an SMD package or a laser TO can).

[0151] refer to Figure 2e In one embodiment, circuit 500 is configured such that, depending on the resistance of sensor element 410, sensor element 400 terminates the power supplied to solid-state light source 100 via circuit 500. Specifically, in another embodiment, system 1000 may further include circuit element 420 selected from the group consisting of relays and solid-state switches, such as MOSFETs, wherein circuit element 420 is configured such that, depending on the resistance of sensor element 410, circuit element 420 terminates the power supplied to solid-state light source 100 via circuit 500.

[0152] In a specific embodiment, the light generation system 1000 may further include a control unit 310 configured to prevent the solid-state light source 100 from automatically turning on again after an event in which the sensor element 400 has ceased supplying power to the solid-state light source 100. For example, in an embodiment, the control unit 310 may be configured to sense the current passing through the light source 100 (e.g., a laser). When the control unit 310 senses that the current has dropped below a certain level (e.g., substantially 0 A), it may cut off the power until a reset is performed.

[0153] In this embodiment, the control unit 310 may include a first input terminal, a second input terminal, and a third input terminal. The first input terminal may include a current sensor (not circuit component 420), the second input terminal is a reset signal, and the third input terminal is a power supply. Furthermore, the control unit 310 may have an output to the laser, for example, by turning off the laser's power until a reset is performed.

[0154] refer to Figure 2f The diagram schematically illustrates an embodiment of the reflective configuration. Normal operation is depicted on the left. A separate blue laser is used to pump the phosphor (high power) and mixes blue light (low power) into the emitted beam. The unconverted blue light from the pump laser is transmitted through a dichroic mirror (an embodiment of optical element 620) and collected in the beam collector. In the event of a phosphor failure, the unconverted light will also be collected in the beam collector. Because the intensity is much higher than under normal operation, a safety circuit can be easily included in the beam collector. As described in the embodiment, this requires a resistor connected in series or parallel with the pump laser. Under high-intensity blue light, the resistor will change its resistance, thereby cutting off the power supply to the pump laser. Reference numeral 1005 indicates end window 1005 (or light exit window). Reference numeral 270 indicates a reflector. In this embodiment, a reflective layer may be present behind the light-emitting element 210.

[0155] Therefore, in a specific embodiment, the photoresistor, serving as the sensor component 410, can be configured within the beam collector BD. In a specific embodiment, the beam collector BD can be a recess or a cavity. Specifically, in an embodiment, the beam collector BD can include a light-absorbing material for laser light, such as a black material (similar to a material with a black coating). This can improve safety. Therefore, in a specific embodiment, the photoresistor, serving as the sensor component 410, can be configured within the recess or cavity of the beam collector BD.

[0156] Figure 2g Further embodiments of possible transmission modes are schematically depicted. Reference numeral 300 may refer to a control system (or driver).

[0157] refer to Figure 2g In an embodiment, light source 101, such as a laser, can be directed to the light-emitting material element 210 such that specular reflection of the light source 101 at the light-emitting material element 210 will substantially prevent it from propagating to the end window 1005 of the system 1000 along with the light-emitting material light 201. For example, the end window 1005 (or light exit window) of the system 1000 can be configured at an angle of, for example, 90° relative to the light-emitting material light 201 propagating to the end window 1005. Figure 2gIn this context, angle α represents the angle, which is 90° in this case. This improves safety. Other angles beyond 90° are also possible, such as those specifically selected from the range of 20-160°, or from the range of 35-145°.

[0158] Figure 3 An embodiment of an illuminator 2 including the light generating system 1000 as described above is schematically depicted. Reference numeral 301 indicates a user interface that can be functionally coupled to a control system 300, which is included in or functionally coupled to the light generating system 1000. Figure 3 An embodiment of a lamp 1 including a light generating system 1000 is also schematically depicted. Reference numeral 3 indicates a projector device or projector system, which can be used, for example, to project images onto a wall, and may also include the light generating system 1000.

[0159] The term "multiple" refers to two or more.

[0160] Those skilled in the art will understand the terms "substantially" or "basically" and similar terms used herein. The term "substantially" or "basically" may also include embodiments with terms such as "completely," "entirely," "entirely," etc. Therefore, in embodiments, the adjectives "substantially" or "basically" may also be removed. Where applicable, the term "substantially" or "basically" may also refer to 90% or higher, such as 95% or higher, particularly 99% or higher, even more particularly 99.5% or higher, including 100%.

[0161] The term "comprising" also includes embodiments that mean "consisting of".

[0162] The term “and / or” specifically refers to one or more items mentioned before and after “and / or”. For example, the phrase “item 1 and / or item 2” and similar phrases can refer to one or more of item 1 and item 2. The term “comprising” in one embodiment can mean “consisting of”, but in another embodiment it can also mean “containing at least the defined kinds and optional one or more other kinds”.

[0163] Furthermore, the terms first, second, third, etc., used in the specification and claims are used to distinguish between similar elements and are not necessarily used to describe a sequential or chronological order. It should be understood that such terms are interchangeable where appropriate, and the embodiments of the invention described herein can operate in orders other than those described or shown herein.

[0164] During operation, the equipment, apparatus, or system may be described herein—among others. As will be apparent to those skilled in the art, the invention is not limited to the method of operation, or the equipment, apparatus, or system in operation.

[0165] It should be noted that the above embodiments are illustrative and not limiting of the invention, and those skilled in the art will be able to devise many alternative embodiments without departing from the scope of the appended claims.

[0166] In the claims, any reference numerals placed between parentheses shall not be construed as limiting the claims.

[0167] The use of the verb "comprising" and its variations does not exclude the presence of elements or steps other than those stated in the claims. Unless the context explicitly requires it, throughout the specification and claims, the words "comprising," "including," etc., should be interpreted as encompassing, not exclusive or exhaustive; that is, in the sense of "including but not limited to."

[0168] The article "one" or "a" preceding an element does not preclude the existence of multiple such elements.

[0169] This invention can be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In an apparatus claim, device claim, or system claim listing several components, several of these components may be embodied by the same hardware item. The mere fact that certain measures are referenced in mutually different dependent claims does not indicate that a combination of these measures cannot be used advantageously.

[0170] The present invention also provides a control system that can control a device, apparatus, or system, or perform the methods or processes described herein. Furthermore, the present invention provides a computer program product that, when functionally coupled to or executed on a computer included in a device, apparatus, or system, controls one or more controllable elements of such device, apparatus, or system.

[0171] The present invention is also applicable to devices, apparatuses, or systems that include one or more features described in the specification and / or shown in the accompanying drawings. The present invention also relates to methods or processes that include one or more features described in the specification and / or shown in the accompanying drawings.

[0172] The various aspects discussed in this patent can be combined to provide additional advantages. Furthermore, those skilled in the art will understand that embodiments can be combined, and more than two embodiments can be combined. Additionally, some features can form the basis of one or more divisional applications.

[0173] In particular, the present invention can directly provide a laser safety protection method in the circuit to dim / turn off the laser using a resistance-changing element in the laser circuit. In embodiments, the protection method uses elements that reduce resistance upon laser exposure, these elements being placed in parallel with the laser device. In embodiments, the protection method uses elements that increase resistance upon laser exposure, these elements being placed in series with the laser device. In embodiments, the protection method uses elements that reduce resistance upon exposure to converted light, these elements being placed in series with the laser device. In embodiments, the resistance-changing element is a resistor or switch that reversibly changes resistance upon exposure. In embodiments, the resistance-changing element is an NTC. In embodiments, the resistance-changing element is an LDR. In embodiments, the resistance-changing element is a PTC. In embodiments, the resistance-changing element is a (bimetallic) switch. In embodiments, an additional control unit in the circuit can be applied to prevent the laser from automatically restarting after a fault. In embodiments, the resistance-changing element irreversibly changes resistance. In embodiments, the resistance-changing element can be a fuse or a 0Ω resistor that causes an open circuit upon exposure. In embodiments, the resistance-changing element can be located in the optical path. In one embodiment, the resistance changing element may be placed after the conversion element / phosphor. In another embodiment, the resistance changing element may be placed after the beam shaping element (lens, reflector). In yet another embodiment, the resistance changing element may be placed at multiple locations within the optical section. In yet another embodiment, the resistance changing element may be exposed to blue laser light after a failure.

Claims

1. A light generation system (1000) comprising a solid-state light source (100), a light-emitting material element (210), a sensor element (400), and a circuit (500), wherein: - The solid-state light source (100) is configured to generate light source light (101), wherein the solid-state light source (100) is functionally coupled to the circuit (500). - The light-emitting material element (210) includes a light-emitting material (200), wherein the light-emitting material element (210) is configured to receive light from the solid-state light source (100), and wherein the light-emitting material (200) is configured to convert at least a portion of the light from the light source (101) into light-emitting material light (201); and - The sensor element (400) includes a sensor component (410), wherein the sensor element (400) is included in the circuit (500), wherein the sensor component (410) includes a photoresistor having a variable resistance that depends on the degree of exposure to light (11) selected from the group consisting of laser light and light from luminescent materials (201); and -One or more of the following are applicable: (i) the sensor component (410) is configured to decrease resistance when the intensity of the light source light (101) increases, wherein the sensor component is configured to be connected in parallel with the solid-state light source (100); (ii) the sensor component (410) is configured to increase resistance when the intensity of the light source light (101) increases, wherein the sensor component is configured to be connected in series with the solid-state light source (100); (iii) the sensor component (410) is configured to decrease resistance when the intensity of the luminescent material light (201) increases, wherein the sensor component is configured to be connected in series with the solid-state light source (100); and (iv) the sensor component (410) is configured to increase resistance when the intensity of the luminescent material light (201) increases, wherein the sensor component is configured to be connected in parallel with the solid-state light source (100); and - The light source includes a laser light source, and the circuit (500) is configured such that a change in the resistance of the photoresistor causes a decrease in the current and / or voltage of the laser light source, thereby dimming or turning off the laser light source.

2. The light generation system (1000) according to claim 1, wherein the light-emitting material element (210) is configured to be located away from the solid-state light source (100), wherein the solid-state light source (100) includes one or more of a laser diode and a superluminescent diode, and wherein the sensor component (410) is configured to increase or decrease the resistance of the sensor component (410) in the circuit (500) depending on one or more of the degree of exposure to light (11) and the degree of heat received.

3. The light generation system (1000) according to claim 1 or 2, wherein, One or more of (i) the intensity of the light from the luminescent material received by the sensor element and (ii) the intensity of the laser received by the sensor element depend on the presence or absence of at least a predetermined portion of a functional component in the light generation system, wherein the functional component is selected from the group comprising the luminescent material element and optical components.

4. The light generation system (1000) according to claim 1 or 2, wherein the light-emitting material element (210) is configured in a transmission mode, and wherein the sensor component (410) is configured downstream of the light-emitting material element (210).

5. The light generation system (1000) according to claim 1 or 2, wherein the light-emitting material element (210) is configured in a reflection mode, and wherein the following applies: (i) the sensor component (410) is disposed downstream of the light-emitting material element (210) and is configured to receive at least a portion of the light source light (101) reflected at the light-emitting material element (210), or (ii) the sensor component (410) is configured to receive the light source light (101) in the absence of a predetermined portion of the light-emitting material element (210), and is configured not to receive the light source light (101) or to receive the light source light (101) with reduced intensity in the presence of a predetermined portion of the light-emitting material element (210).

6. The light generation system (1000) according to claim 1, wherein the light generation system (1000) is configured according to configuration (iii) and / or configuration (iv), wherein: - When the sensor component (410) is configured to decrease resistance when the intensity of the light emitted by the luminescent material (201) increases, and when the sensor component is configured to be connected in series with the solid-state light source (100), the sensor component (410) is also configured to increase resistance when the intensity of the light emitted by the luminescent material (201) decreases; and / or - When (iv) the sensor component (410) is configured to increase resistance when the intensity of the light emitting material (201) increases, and when the sensor component is configured to be connected in parallel with the solid-state light source (100), the sensor component (410) is configured to decrease resistance when the intensity of the light emitting material (201) decreases.

7. The light generation system (1000) according to claim 1, wherein the light generation system (1000) is configured (iii) and / or (iv) in which the sensor component (410) is configured to reversibly change its resistance.

8. The light generation system (1000) according to claim 1, wherein the light generation system (1000) is configured (i) and / or (ii) in such a way that the sensor component (410) is configured to irreversibly change its resistance.

9. The light generation system (1000) according to claim 1 or 2, wherein, The circuit (500) is configured such that, depending on the resistance of the sensor element (410), the sensor element (400) terminates the power supplied to the solid-state light source (100) via the circuit (500).

10. The light generation system (1000) of claim 9 further includes a circuit component (420) selected from the group consisting of relays and solid-state switches, wherein the circuit component (420) is configured such that, depending on the resistance of the sensor component (410), the circuit component (420) terminates the power supplied to the solid-state light source (100) via the circuit (500).

11. The light generation system (1000) according to claim 9, further comprising a control unit (310) configured to prevent the solid-state light source (100) from automatically turning on again after the sensor element (400) has stopped supplying power to the solid-state light source (100).

12. The light generation system (1000) according to claim 1 or 2, wherein, The sensor component (410) is configured to receive stray light from one or more of the solid-state light source (100) and the luminescent material (200).

13. The light generation system (1000) according to claim 1 or 2, comprising a plurality of sensor elements (400) disposed at different locations within the light generation system (1000).

14. A light generating device (1200) selected from the group consisting of a lamp (1), an illuminator (2), a projector device (3), a disinfection device, and an optical wireless communication device, comprising a light generating system (1000) according to claim 1 or 2.

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