Spindle growth apparatus and method of monitoring thereof

Abstract

An ingot growing apparatus for growing an ingot from a melt contained in a crucible of a chamber and a monitoring method thereof. The apparatus includes a first sensor and a controller. The first sensor is installed on one side of the chamber to detect a detection signal from a side portion of the ingot in real time. The side portion of the ingot rotates through a detection area focused by the first sensor. The controller obtains a detection signal at each of a plurality of sampling points based on the detection signal detected in real time, obtains a value of a center point of the ingot based on the detection signal at each of the plurality of sampling points, and determines whether the ingot is defective based on the value of the center point of the ingot.

Description

Technical Field

[0001] This embodiment relates to ingot growth equipment and its monitoring method. Background Technology

[0002] Silicon single crystals, the basic material for semiconductor integrated circuits, are manufactured using the Czochralski (CZ) method.

[0003] In the CZ process, silicon single crystal ingots can be grown from the raw material melt by placing the raw material melt into a crucible and heating the crucible, using a seed crystal.

[0004] Growing silicon single crystal ingots with uniform diameter is very important.

[0005] However, orbits can occur due to uneven rotation during the growth process. Alternatively, ingots grown from seed crystals via cables may exhibit dog legs due to setup issues or temperature asymmetry within the chamber. For example, cable problems can exist as a setup issue. Furthermore, orbits or dog legs can occur because the thermal environment is not optimized due to setup issues with appendages such as hot zones.

[0006] Considering the possibility of rings or bends, the ingot diameter is grown to be larger than the customer's required diameter. Ingots grown in this way can then be ground to the diameter required by the customer.

[0007] However, if the ring or bend is severe, the grown ingot may be partially or completely discarded even without grinding because the ingot is smaller than the diameter required by the customer.

[0008] At the same time, there is currently no technology developed for real-time monitoring of loops or kinks during ingot growth. Therefore, a drawback is that the ingot growth equipment must be stopped until inspection results are obtained regarding whether kinks have occurred in the produced ingots. Furthermore, even if kinks are confirmed after the ingot growth equipment has been stopped and a detailed inspection is conducted, it is difficult to determine the cause if the problem is not with the ingot growth equipment itself.

[0009] On the other hand, even if folding occurs partially in the ingot, if the degree of occurrence is not severe, the folding can be removed by grinding after block cutting around the folded portion. However, since block cutting is necessary for this purpose, there is a problem of reduced productivity due to increased processing time. Summary of the Invention

[0010] The purpose of these embodiments is to address the aforementioned and other problems.

[0011] Another objective of the embodiments is to provide an ingot growth apparatus and a monitoring method that can monitor ingot-related defects (such as loops or bends) in real time as the ingot grows.

[0012] Furthermore, another objective of the embodiments is to provide an ingot growth apparatus and a monitoring method that can determine, in real time, whether an ingot is completely or partially discarded based on ingot-related defects as the ingot grows.

[0013] Another objective of the embodiments is to provide an ingot growth apparatus and a monitoring method that can prevent unnecessary block cutting of the ingot.

[0014] The technical problems of the embodiments are not limited to those described in this section, but include those that can be understood from the description of the invention.

[0015] According to a first aspect of an embodiment for achieving the above or other purposes, an apparatus for growing an ingot from a melt contained in a crucible within a chamber, the apparatus comprising: a first sensor mounted on one side of the chamber for real-time detection of a detection signal from a side portion of the ingot; and a controller, wherein the side portion of the ingot rotates through a detection area focused by the first sensor, and wherein the controller is configured to: obtain a detection signal at each of a plurality of sampling points based on the real-time detected detection signal, obtain a value of a center point of the ingot based on the detection signal at each of the plurality of sampling points, and determine whether the ingot is defective based on the value of the center point of the ingot.

[0016] Multiple sampling points are set at least three or more along the side circumference of the ingot.

[0017] The value of the center point of the ingot is the value of the center point of the polygon with each of the multiple sampling points as its vertex.

[0018] The controller compares the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber with a threshold, and identifies the ingot as defective when the obtained difference between the obtained value of the center point of the ingot and the value of the center point of the chamber exceeds the threshold.

[0019] When the value of the center point of the ingot is the same as the value of the center point of the chamber, the controller determines that the ingot is normal.

[0020] The controller determines the ingot to be normal when the difference between the value of the center point of the ingot and the value of the center point of the chamber is less than or equal to the threshold.

[0021] The device also includes a display unit. The controller displays the ideal shape of the ingot, the shape of the critical ring surrounding the ideal ingot shape, and the shape of the ingot on the display unit.

[0022] The controller monitors defects in the ingot in real time, and when a defect occurs in the ingot during the monitoring period, it sends at least one piece of information related to the defect to at least one site.

[0023] The device also includes a second sensor configured to acquire thermal image information of the ingot. Defects in the ingot include kinking. The controller determines, based on the thermal image information, whether the kinking is caused by a problem with the device setup within the chamber or by temperature asymmetry.

[0024] According to a second aspect of the embodiments, a monitoring method is provided in an apparatus for growing an ingot from a melt contained in a crucible within a chamber. The apparatus includes a first sensor mounted on one side of the chamber for real-time detection of a detection signal from a side portion of the ingot, wherein the side portion of the ingot rotates through a detection area focused by the first sensor. The monitoring method includes: obtaining a detection signal at each of a plurality of sampling points based on the real-time detected detection signal; obtaining a value of a center point of the ingot based on the detection signal at each of the plurality of sampling points; and determining whether the ingot is defective based on the value of the center point of the ingot.

[0025] Multiple sampling points are set at least three or more along the side circumference of the ingot.

[0026] The value of the center point of the ingot is the value of the center point of the polygon with each of the multiple sampling points as its vertex.

[0027] Determining whether an ingot is defective involves comparing the difference between the obtained value of the ingot's center point and the value of the cavity's center point with a threshold, and identifying the ingot as defective when the obtained difference between the obtained value of the ingot's center point and the value of the cavity's center point exceeds the threshold.

[0028] Determining whether an ingot is defective includes: if the value of the obtained center point of the ingot is the same as the value of the center point of the chamber, the ingot is determined to be normal.

[0029] Determining whether an ingot is defective includes: if the difference between the obtained value of the ingot's center point and the value of the chamber's center point is less than or equal to a threshold, the ingot is determined to be normal.

[0030] The device includes a display unit. The monitoring method includes displaying the shape of the ideal ingot, the shape of the critical ring surrounding the ideal ingot shape, and the shape of the ingot on the display unit.

[0031] The monitoring method includes real-time monitoring of defects in the ingot; and when a defect occurs in the ingot during monitoring, sending at least one piece of information related to the defect to at least one site.

[0032] The device includes a second sensor configured to acquire thermal image information of the ingot, and the ingot's defects include kinking. The monitoring method includes determining, based on the thermal image information, whether the kinking is caused by a problem with the device setup within the chamber or by temperature asymmetry.

[0033] The effects of the ingot growth equipment and the monitoring method for the ingot growth equipment according to the embodiments are as follows.

[0034] According to at least one embodiment, during ingot growth, different detection signals can be sensed in real time along the side circumference of the ingot, depending on its shape, whether protruding outwards or retracting inwards. In this way, a detection signal corresponding to each of a plurality of sampled signals can be selected from the real-time sensed detection signals. The value of the ingot's center point can be obtained based on the detection signal corresponding to each of the acquired plurality of sampled signals. When loops or bends occur, the value of the ingot's center point can vary depending on the ingot's growth direction.

[0035] Defects in an ingot can be determined based on the value of its center point. For example, when the difference between the value of the ingot's center point and the value of the center point of the chamber exceeds a threshold, the corresponding ingot can be identified as a defective ingot. The threshold can be set considering the relationship between the target diameter and the diameter required by the customer. The target diameter can be larger than the diameter required by the customer. In this case, the threshold can be a minimum value at which the ingot can be processed to remove the loops or kinks, even if kinks or loops are present, and an ingot with the minimum diameter required by the customer can be produced.

[0036] Therefore, according to the embodiments, by monitoring ingot growth in real time, defective ingots that cannot be reused due to processing, etc., can be easily identified, thereby significantly reducing costs and increasing productivity by shortening processing time.

[0037] The further applicability of the embodiments will become apparent from the following detailed description. However, since various changes and modifications within the spirit and scope of the embodiments will be readily understood by those skilled in the art, it should be understood that the detailed description and specific embodiments (e.g., preferred embodiments) are given by way of example only. Attached Figure Description

[0038] Figure 1 This is a cross-sectional view showing an ingot growth apparatus according to an embodiment.

[0039] Figure 2 The diagram illustrates the use of a first sensor to sense the detection signal.

[0040] Figure 3 The detection area used to obtain the detection signal is shown.

[0041] Figure 4Multiple sampling points are shown in polar coordinates.

[0042] Figure 5 The diagram shows a normal ingot and an ingot with folds.

[0043] Figure 6 This is a block diagram illustrating an ingot growth apparatus according to an embodiment.

[0044] Figure 7 This is a flowchart illustrating a method for monitoring an ingot growth apparatus according to an embodiment.

[0045] Figure 8 It is shown in detail Figure 7 The flowchart of S540.

[0046] Figure 9A This is a diagram showing the polar coordinate system.

[0047] Figure 9B yes Figure 9A A magnified view of region B.

[0048] Figure 10A This demonstrates how to determine if an actual ingot is normal by comparing the shape of the actual ingot with the shape of the critical ring.

[0049] Figure 10B This demonstrates how to determine if an actual ingot is defective by comparing the shape of the actual ingot with the shape of the critical ring.

[0050] Figure 11 The monitoring of multiple lots within the same chamber is shown.

[0051] Figure 12 This is a flowchart illustrating an example of a method for processing monitoring results.

[0052] Figure 13 This is a flowchart illustrating a method for determining the cause of a defect using thermal image information.

[0053] Figure 14 illustrates the use of thermal image information to determine the causes of normal and abnormal conditions. Detailed Implementation

[0054] In the following description, the embodiments disclosed herein will be described in detail with reference to the accompanying drawings. However, regardless of the reference numerals, the same or similar parts will be given the same reference numerals, and redundant descriptions of the same or similar parts will be omitted. For ease of writing this specification, the suffixes “module” and “part” used for parts in the following description are given or used interchangeably, and these suffixes do not themselves have different meanings or functions from each other. Furthermore, the drawings are provided to facilitate understanding of the embodiments disclosed herein, and the technical ideas disclosed herein are not limited to the drawings. Additionally, when an element such as a layer, region, or substrate is described as being “on” another element, this includes the element being directly on the other element or having other intermediate elements between the element and the other element.

[0055] Figure 1 This is a cross-sectional view showing an ingot growth apparatus according to an embodiment.

[0056] Reference Figure 1 The ingot growth apparatus according to the embodiment may include a chamber 100, a crucible 102, a heater 104, a first heat shield 106, and a second heat shield 200.

[0057] Chamber 100 provides space for performing predetermined processes for growing silicon single crystal ingots, which are the basic material for semiconductor integrated circuits.

[0058] The crucible 102 is a hot zone structure installed within the chamber 100, and the molten silicon M can be contained within the crucible. The crucible 102 is connected to a drive unit and can rotate and / or move up and down.

[0059] Heater 104 may be arranged around the outer periphery of crucible 102. Heater 104 may generate heat energy to be applied to crucible 102 to melt polycrystalline silicon.

[0060] The first heat shield 106 can be arranged between the chamber 100 and the heater 104 to have heat insulation capabilities, so that the heat applied from the heater 104 to the crucible 102 is not discharged to the outer part of the chamber 100.

[0061] A seed crystal chuck 300 can be arranged on the crucible 102, and a seed crystal for growing a silicon single crystal ingot is contained within the seed crystal chuck. Furthermore, a cable 310 for rotating and / or moving the seed crystal chuck 300 vertically can be connected to the seed crystal chuck 300. The cable 310 is connected to a drive mechanism for rotation and / or vertical movement.

[0062] The second heat shield 200 can be arranged to prevent heat from being released from the upper part of the crucible 102 to the outside.

[0063] As in Figure 1As shown, the ingot growth apparatus according to the embodiment may further include a first sensor 130 and a second sensor 140.

[0064] The first sensor 130 is mounted on one side of the chamber 100 and can detect the detection signal from the side portion of the spindle I in real time. That is, the first sensor 130 can be mounted on the observation port 120, which is arranged on the upper part of the chamber 100. The first sensor 130 can be a camera, but is not limited to this.

[0065] Polycrystalline silicon can be melted by heater 104 to become melt M.

[0066] The seed crystal is contained in the seed crystal chuck 300 of the cable 310. The cable moves downward so that the seed crystal in the seed crystal chuck 300 can be immersed in the melt M.

[0067] Subsequently, as cable 310 rotates and / or moves upward, melt M adheres to the seed crystal, allowing ingot I to grow. Cable 310 (or ingot I) can rotate and / or move upward until ingot I grows to the desired length. The ingot can rotate at a predetermined rotational speed.

[0068] As in Figure 2 and Figure 3 As shown, a meniscus phenomenon occurs on the surface of the melt M adjacent to ingot I, and the area where this meniscus phenomenon occurs can be defined as meniscus region 220.

[0069] The first sensor 130 can be focused on the detection area 210 to detect the detection signal from the detection area 210. The detection area 210 can be the area where the first sensor can detect the detection signal.

[0070] As ingot I rotates, its side portion rotates through a detection area 210 focused on the first sensor 130. The detection area 210 focused on by the first sensor 130 can be a fixed area. Even if the detection area 210 focused by the first sensor 130 is fixed, as ingot I rotates, the entire side portion along the circumference of ingot I sequentially passes through the detection area 210. Therefore, the first sensor 130 detects a detection signal from the detection area 210, which includes or is adjacent to the side portion of ingot I that passes through the fixed detection area 210 as ingot I rotates. As described above, ingot I will not grow with a constant diameter due to ingot I wobbling, temperature asymmetry, or device configuration issues in chamber 100. That is, the side portion of ingot I may grow to protrude outwards along the growth direction. While the side portion of ingot I protrudes outwards, another side portion of ingot I may have an inwardly concave shape, located on an opposite side that passes through the center of ingot I from its side.

[0071] Therefore, the first sensor 130 can detect the detection signal in real time along the side circumference of the ingot I. For example, the detection area 210 may include at least the meniscus area 220.

[0072] For example, the detection signal may include brightness information (or brightness value) of the meniscus region 220.

[0073] The brightness value of the meniscus region 220 can vary as the diameter of ingot I increases or decreases. For example, when the diameter of ingot I increases, ingot I expands outward (arrow indicates outward), which may mean that the brightness value of the meniscus region 220 increases. Conversely, when the diameter of ingot I decreases, ingot I contracts inward (arrow indicates inward), which may mean that the brightness value of the meniscus region 220 decreases.

[0074] As will be described later, the detection signal at each of the multiple sampling points can be selected from the real-time sensed detection signal. Multiple sampling points can be preset.

[0075] As in Figure 4 As shown, eight sampling points SM1 to SM8 can be set. For example, multiple sampling points SM1 to SM8 can be set along the circumference of the side of spindle I.

[0076] For example, eight sampling points SM1 to SM8 can be arranged at 45° intervals along the side circumference of spindle I. That is, when the first sampling point SM1 is at 0°, the second sampling point SM2 can be located at a rotation interval of 45° from the first sampling point SM1. The third sampling point SM3 can be located at a rotation interval of 45° from the second sampling point SM2. In this way, the remaining sampling points SM4 to SM8 can also be located at rotation intervals of 45° from each other.

[0077] As described above, ingot I can rotate, and the first sensor 130 can be focused on a fixed detection area 210. Therefore, when the circumference of the side of ingot I passes through the detection area 210, the brightness value of the meniscus region 220 can be detected in real time as a detection signal. The brightness value of this meniscus region changes as the diameter of the side of ingot I increases or decreases. In this way, among the detection signals sensed in real time along the circumference of the side of ingot I, detection signals corresponding to preset sampling points SM1 to SM8 can be selectively obtained. For example, when eight sampling points SM1 to SM8 are set, the detection signal of each of the eight sampling points SM1 to SM8 can be selectively obtained.

[0078] Meanwhile, although not shown, three sampling points can be arranged at 120° intervals along the side circumference of spindle I. Furthermore, although not shown, four sampling points can be arranged at 90° intervals along the side circumference of spindle I.

[0079] Multiple sampling points SM1 to SM8 are used to determine the center point of the ingot, and at least three sampling points can be set.

[0080] The following section will describe in detail how defects in spindle I are determined based on the detection signals from each of the multiple sampling points SM1 to SM8.

[0081] Meanwhile, for example, the second sensor 140 can be mounted on one side of the cable 310. Although not shown, the second sensor 140 can be mounted on another observation port. The second sensor 140 can be a pyrometer sensor, but is not limited thereto.

[0082] The second sensor 140 can acquire thermal image information of ingot I. For example, the thermal image information can be temperature distribution information.

[0083] The cause of the folding defect, which is a defect of ingot I, can be determined based on the thermal image information of ingot I obtained from the second sensor 140, and will be described in detail later.

[0084] Although not shown, a sensor for detecting the number of rotations of spindle I can be installed in a predetermined area of ​​chamber 100. For example, a corresponding sensor can be installed in a predetermined area of ​​cable 310.

[0085] Meanwhile, ingot defects such as ring tracks and bends exist. Ring tracks can be defects that grow asymmetrically when the ingot is shaken. Bends can be defects caused by problems with the device setup in chamber 100 or temperature asymmetry, resulting in the ingot not growing to the same diameter and growing in a zigzag pattern on the outer surface. When bends occur, the center point of the ingot can be located like a whirlwind according to the growth direction.

[0086] As in Figure 5 As shown in the figure, it can be seen that the bending occurs along the growth direction. Figure 4 The same sampling points SM1 to SM8 are shown. For example, the center point of the ingot repeatedly moves to the left and then to the right according to the growth direction. When the center point of the ingot is tilted to the left, the ingot may have a shape that protrudes from the left and enters from the right side compared to a normal ingot in the corresponding segment. When the center point of the ingot is tilted to the right, the ingot may have a shape that enters from the left and protrudes from the right side compared to a normal ingot.

[0087] Generally, even if bending occurs, ingots grown in this way can be side-machined to the diameter required by the customer. In this case, the left or right recessed portion formed by side machining can be removed and made into a flat shape.

[0088] However, if the degree of left or right indentation in a bent ingot is severe (i.e., if the degree of left or right indentation exceeds a threshold), even with side processing, the ingot will not form a flat shape, and the ingot may still be indented to the left or right. In this case, because the diameter is smaller than the diameter required by the customer, the corresponding section of the ingot or the entire ingot can be identified as defective and discarded.

[0089] exist Figure 5 In the middle, the left side can be the first sampling point ( Figure 4 SM1 in the middle), the right side can be the fifth sampling point ( Figure 4 (SM5 in the sample). Therefore, it can be seen that the bending occurs at each of the first sampling point SM1 and the fifth sampling point SM5 according to the growth direction.

[0090] According to the embodiments, the growth of the ingot can be monitored. As a result of this monitoring, the occurrence of bends or loops can be detected. Furthermore, even if bends or loops occur, it can be determined whether the ingot should be discarded based on a threshold.

[0091] Figure 6 This is a block diagram illustrating an ingot growth apparatus according to an embodiment.

[0092] Reference Figure 6 The ingot growth apparatus according to an embodiment may include a first sensor 130, a second sensor 140, and a controller 410. The ingot growth apparatus according to an embodiment may include more components than these.

[0093] The first sensor 130 can detect the detection signal in real time from the side of the ingot.

[0094] The controller 410 can obtain a detection signal at each of the multiple sampling points based on the detection signal detected in real time, obtain the value of the center point of the ingot based on the detection signal at each of the multiple sampling points, and determine whether the ingot has a defect based on the value of the center point of the ingot.

[0095] As in Figure 9A and Figure 9B As shown, the center point CP1 of chamber 100, the threshold PV, and multiple sampling points SM1 to SM4 can be located (or displayed) in a polar coordinate system. Depending on the detection signal (i.e., the brightness value of the meniscus region 220), the multiple sampling points SM1 to SM4 can be located differently in the polar coordinate system. That is, when the detection signal at each of the multiple sampling points SM1 to SM4 changes, the position of each of the multiple sampling points SM1 to SM4 in the polar coordinate system can also change.

[0096] Although the number of sampling points SM1 to SM4 is Figure 9AThe diagram shows four sampling points, but this is just an example; three or more sampling points can be set. The threshold PV can be set differently depending on the target diameter or the operator's requirements.

[0097] Among the detected signals in real time, the detection signal corresponding to each of the multiple sampling points SM1 to SM4 can be selectively obtained.

[0098] In this case, the controller 410 can obtain the value of the spindle's center point CP2 based on the detection signal of each of the multiple sampling points SM1 to SM4. The value of the spindle's center point CP2 can be located in a polar coordinate system.

[0099] As described above, when loops or bends occur during the growth of the ingot, the diameter of the ingot changes, causing the side portions of the ingot to protrude or contract outwards, and the degree of protrusion or contraction can vary. The degree of this difference can be detected as brightness information (i.e., a detection signal) of the meniscus region 220.

[0100] Therefore, the detection signal at each of the multiple sampling points SM1 to SM4 (i.e., the brightness information of the meniscus region 220) can be changed according to the growth direction of the ingot, and the value of the ingot's center point CP2 obtained based on the detection signal at each of the multiple sampling points SM1 to SM4 can also be changed.

[0101] If the center point CP2 of the ingot, obtained according to the growth direction of the ingot, is constant, then the ingot can grow with a constant diameter according to the growth direction.

[0102] If the center point CP2 of the ingot is not constant according to the growth direction of the ingot, the ingot grows with a non-constant diameter according to the growth direction, and in particular, loops or bends may occur.

[0103] For example, the value of the ingot's center point CP2 can be, but is not limited to, the value of the center point of a polygon with each of the multiple sampling points SM1 to SM4 as its vertices. Here, the center point of the polygon can be the centroid of the polygonal ingot. For example, when the density of the ingot is the same in all regions, the center point of the polygon and the centroid of the ingot may coincide.

[0104] For example, the center point CP2 of the ingot can be obtained by transforming multiple sampling points SM1 to SM4 into the XY coordinate system, and then adding the detection signal into the transformed XY coordinate system, but it is not limited to this.

[0105] Simultaneously, the threshold PV can be located in a polar coordinate system. For example, the threshold PV can have a loop shape. The center point of the polar coordinate system can be, for example, the center point CP1 of chamber 100. The center point CP1 of chamber 100 can be fixed. The center point CP1 of chamber 100 can be the position of the cable within chamber 100. The center point CP1 of chamber 100 is a fixed point. Therefore, the defect of the spindle can be determined based on the degree to which the center point CP2 of the spindle deviates from the center point CP1 of chamber 100.

[0106] For example, the threshold PV with a loop shape can be a value of the distance d between it and the center point CP1 of the chamber 100. This is because the threshold PV can be spaced from the center point CP1 of the chamber 100 by the same distance d along the loop.

[0107] When the center point CP2 of the ingot is located in a region other than the center point CP1 of the chamber 100, this may indicate the presence of a defect.

[0108] For example, when the value of the center point CP2 of an ingot is greater than the threshold PV (i.e., distance d), the ingot can be determined to be defective.

[0109] More specifically, the controller 410 can compare the difference DV between the value of the center point CP2 of the ingot and the value of the center point CP1 of the chamber 100 with a threshold PV, and determine that the ingot is defective when the obtained difference DV between the value of the center point CP2 of the ingot and the value of the center point CP1 of the chamber 100 exceeds the threshold PV. That is, when the obtained difference DV between the value of the center point CP2 of the ingot and the value of the center point CP1 of the chamber 100 exceeds a distance d, the controller 410 can determine that the ingot is defective. Ingots determined to be defective may have severe loops or bends, meaning that the ingot cannot be reused even after processing and should be discarded.

[0110] For example, when the center point CP1 of chamber 100 is 0, the difference DV can be the value of the center point CP2 of the ingot.

[0111] When the value of the center point CP2 of the ingot is the same as the value of the center point CP1 of the chamber 100, or when the difference DV between the value of the center point CP2 of the ingot and the value of the center point CP1 of the chamber 100 is less than or equal to the threshold PV, the controller 410 can determine that the corresponding ingot is normal.

[0112] According to an embodiment, by monitoring the entire growth process of the ingot and identifying defective and normal ingots for each segment, only the ingots corresponding to the defective segments are discarded, and the ingots corresponding to the normal segments can be machined to the diameter required by the customer. Therefore, costs can be reduced by preventing indiscriminate discarding of ingots.

[0113] The ingot growth apparatus according to the embodiment may include a display unit 420 and an output interface 430.

[0114] For example, as in Figure 10A and Figure 10B As shown, the controller 410 can display on the display unit 420 the ideal ingot shape 610, the shape 620 of the critical ring surrounding the ideal ingot shape 610, and the shapes 631 and 632 of the actual ingot that have been grown through the growth process.

[0115] The operator can easily determine whether the ingot is defective by the relationship between the actual ingot shapes 631 and 632 and the critical ring shape 620.

[0116] As in Figure 10A As shown, when the actual ingot shape 631 grown through the growth process is not the same as the ideal ingot shape 610 but is located within the critical ring, the ingot can be determined to be a normal ingot.

[0117] As in Figure 10B As shown, when the shape 632 of the actual ingot grown through the growth process deviates from the critical ring, the corresponding ingot can be identified as a defective ingot. Defective ingots may be due to, for example, bending, but are not limited to this.

[0118] The operator can take immediate follow-up measures based on whether the ingot is defective. Whether the ingot is defective is determined by the relationship between the actual ingot shape 631 and 632 and the shape 620 of the critical ring.

[0119] The output interface 430 can be, for example, a speaker. The controller 410 can monitor defects in the ingot in real time, and when a defect occurs in the ingot during monitoring, it outputs information related to the defect through the output interface 430.

[0120] Simultaneously, the controller 410 can monitor defects in the ingot in real time, and when a defect occurs in the ingot during monitoring, it sends defect-related information to at least one or more sites. These sites can be production sites, offices, servers, management centers, etc. The defect-related information can be displayed on display units 420 located at these sites. The defect-related information can be included in... Figure 10A and Figure 10B The information shown includes information on measures to be taken when defects occur, information on new processing conditions to be changed, etc.

[0121] On the other hand, such as in Figure 11As shown, controller 410 can monitor each of multiple batches (batch 1 and batch 2) to easily determine whether a defect has occurred in a particular batch or a particular segment. If the movement capability of the spindle center exceeds a threshold in a particular segment, the corresponding segment can be easily identified as a defective area.

[0122] Although not shown, controller 410 monitors each device (or chamber 100) to easily determine whether a defect has occurred in a particular device, batch, or section.

[0123] Simultaneously, the second sensor 140 can acquire thermal image information of the ingot. The second sensor 140 can be a thermometer sensor.

[0124] The controller 410 can determine whether the bending is due to a problem with the device setup or temperature asymmetry in the chamber 100 based on the thermal image information obtained by the second sensor 140. The presence of a defect in the ingot can be determined before determining whether the bending is due to a problem with the device setup or temperature asymmetry in the chamber 100. That is, the determination of whether the bending is due to a problem with the device setup or temperature asymmetry in the chamber 100 can only be made based on the thermal image information from the second sensor 140 if a defect in the ingot is determined.

[0125] As in Figure 14A and Figure 14B As shown, the temperature distribution included in the thermal image information is seen in stages from the center of the ingot to the side portions of the ingot. That is, the temperature distribution may increase in stages from the center of the ingot to the sides. At this time, the temperature may have an edge shape at each step.

[0126] As in Figure 14A As shown, since the edge shape of the temperature at each level is constant from the center of the ingot to the side portion of the ingot (i.e., symmetrical), the corresponding ingot can be identified as a normal ingot.

[0127] As in Figure 14B As shown, because the edge shape of the temperature at each level is not constant from the center of the ingot to the side portion (i.e., asymmetrical), the ingot can be identified as an anomalous or asymmetrical ingot. From Figure 14B The thermal image information shown makes it easy to identify the corresponding defects in the ingot, namely, the bending is caused by temperature asymmetry.

[0128] Figure 7 This is a flowchart illustrating a method for monitoring an ingot growth apparatus according to an embodiment.

[0129] Reference Figure 6 and Figure 7The controller 410 can receive detection signals from the first sensor 130 in real time (S510).

[0130] The detection signal can be in Figure 2 and Figure 3 The brightness value of the meniscus region 220 detected in the detection area 210 is shown. As the ingot grows while rotating and / or moving upwards, the entire side portion of the ingot can pass through the detection area 210. When the entire side portion of the ingot passes through the detection area 210, the brightness value of the meniscus region 220 can vary as the side portion of the ingot protrudes outwards or extends inwards. Therefore, the detection signal measured in real time can vary along the circumference of the ingot's side and along the growth direction of the ingot.

[0131] The controller 410 can obtain the detection signal at each of the multiple sampling points SM1 to SM4 based on the real-time sensed detection signal (S520).

[0132] As in Figure 9A As shown, the detection signal at each of the multiple sampling points SM1 to SM4 can be located in a polar coordinate system. The detection signal at each of the multiple sampling points SM1 to SM4 varies according to the shape of the side portion of the ingot corresponding to each of the multiple sampling points SM1 to SM4 (i.e., a shape that protrudes outward or is concave inward). Therefore, the detection signal at each of the multiple sampling points SM1 to SM4 can vary according to the growth direction of the ingot.

[0133] The controller 410 can obtain the value of the center point CP2 of the spindle based on the detection signal at each of the multiple sampling points SM1 to SM4 (S530).

[0134] For example, the value of the ingot's center point CP2 can be the value of the center point of a polygon with each of the multiple sampling points SM1 to SM4 as its vertices. The value of the ingot's center point CP2 can also change as the detection signal of each of the corresponding sampling points SM1 to SM4 changes along the growth direction of the ingot.

[0135] The controller 410 can determine whether the spindle has a defect based on the value of the center point CP2 of the spindle (S540).

[0136] For example, the value of the center point CP2 of the ingot can be the same as the value of the center point CP1 of the chamber 100. Alternatively, the value of the center point CP2 of the ingot can be different from the value of the center point CP1 of the chamber 100, but the difference DV between the values ​​of the center point CP2 of the ingot and the center point CP1 of the chamber 100 can be less than or equal to the threshold PV. Or, the value of the center point CP2 of the ingot can be different from the value of the center point CP1 of the chamber 100, and the difference DV between the values ​​of the center point CP2 of the ingot and the center point CP1 of the chamber 100 can exceed the threshold PV.

[0137] Reference Figure 8 Describe methods for determining whether an ingot is defective under these different conditions.

[0138] As in Figure 8 As shown, the controller 410 can determine whether the value of the center point CP2 of the spindle is consistent with the value of the center point CP1 of the chamber 100 (S541).

[0139] When the value of the center point CP2 of the ingot is the same as the value of the center point CP1 of the chamber 100, the corresponding ingot can be identified as a normal ingot (S544).

[0140] When the value of the center point CP2 of the spindle is the same as the value of the center point CP1 of the chamber 100, the controller 410 can determine whether the difference DV between the value of the center point CP2 of the spindle and the value of the center point CP1 of the chamber 100 exceeds the threshold PV (S542).

[0141] When the difference DV between the value of the center point CP2 of the spindle and the value of the center point CP1 of the chamber 100 is less than or equal to the threshold PV, the controller 410 can determine the corresponding spindle as a normal spindle (S544).

[0142] When the difference DV between the value of the center point CP2 of the ingot and the value of the center point CP1 of the chamber 100 exceeds the threshold PV, the controller 410 can identify the corresponding ingot as a defective ingot (S543).

[0143] Figure 12 This is a flowchart illustrating an example of a method for processing monitoring results.

[0144] As in Figure 12 As shown, the controller 410 can monitor defects in the ingot in real time (S550). S550 can be included in... Figure 7 S510, S520, S530 and S540 are shown in the figure.

[0145] As a result of monitoring, if a defect is found in the spindle (S560), the controller 410 can send defect-related information to at least one station (S570). The defect-related information can be included in... Figure 10Aand Figure 10B The information shown includes information on measures to be taken when defects occur, information on new processing conditions to be changed, etc.

[0146] Figure 13 This is a flowchart illustrating a method for determining the cause of a defect using thermal image information.

[0147] As in Figure 6 and Figure 13 As shown, the second sensor 140 can acquire thermal image information (S580). The acquired thermal image information can be provided to the controller 410.

[0148] The controller 410 can analyze the cause of the folding based on the thermal image information (S590). That is, it can determine whether the cause of the folding is due to a problem with the device setup in the chamber 100 or a temperature asymmetry based on the thermal image information obtained by the second sensor.

[0149] For example, when the temperature distribution of the edge shape at each step included in the thermal image information is symmetrical, the corresponding ingot can be identified as a normal ingot. Figure 14A ).

[0150] For example, when the temperature distribution of the edge shape at each step included in the thermal image information is asymmetrical, the ingot can be identified as an anomalous or asymmetrical ingot. Figure 14B ).

[0151] The detailed description above should not be construed as limiting in all respects, but rather as illustrative. The scope of the embodiments should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the embodiments are included within the scope of the embodiments.

Claims

1. An apparatus for growing an ingot from a melt contained in a crucible within a chamber, characterized in that, The device includes: A first sensor, mounted on one side of the chamber, is used to detect a signal from the side portion of the ingot in real time; and Controller Wherein, the side portion of the ingot rotates through the detection area focused by the first sensor, and The controller is configured to: A detection signal is obtained at each of a plurality of sampling points based on the real-time detected detection signal, wherein at least three or more sampling points are arranged along the side circumference of the ingot. The value of the center point of the ingot is obtained based on the detection signal at each of the plurality of sampling points. The value of the center point of the ingot is the value of the center point of a polygon with each of the plurality of sampling points as vertices. The presence or absence of defects in the ingot is determined based on the value of its center point. The controller is configured to: compare the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber with a threshold, and determine the ingot as defective when the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber exceeds the threshold.

2. The device according to claim 1, wherein, The detection signal includes brightness information of the meniscus region.

3. The device according to claim 1, wherein, The controller is configured to: The ingot is considered normal when the value of the center point obtained by the ingot is the same as the value of the center point of the chamber.

4. The device according to claim 1, wherein, The controller is configured to: The ingot is determined to be normal when the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber is less than or equal to the threshold.

5. The device according to claim 1, further comprising: Display unit, The controller is configured to: The display unit displays the shape of the ideal ingot, the shape of the critical ring surrounding the shape of the ideal ingot, and the shape of the ingot itself.

6. The device according to claim 1, wherein, The controller is configured to: Real-time monitoring of defects in the ingot, and When the defect is detected in the ingot during monitoring, at least one piece of information related to the defect is sent to at least one site.

7. The device according to claim 1, further comprising: A second sensor, configured to acquire thermal image information of the ingot. The defects in the ingot include folding, and The controller is configured to: Based on the thermal image information, it can be determined whether the bending is due to a problem with the device setup in the chamber or temperature asymmetry.

8. A monitoring method in an apparatus for growing an ingot from a melt contained in a crucible within a chamber, characterized in that, The device includes a first sensor mounted on one side of the chamber for real-time detection of a detection signal from a side portion of the ingot, wherein the side portion of the ingot rotates through a detection area focused by the first sensor. The monitoring method includes: A detection signal is obtained at each of a plurality of sampling points based on the detection signal detected in real time, wherein at least three or more sampling points are set along the side circumference of the ingot. The value of the center point of the ingot is obtained based on the detection signal at each of the plurality of sampling points, wherein the value of the center point of the ingot is the value of the center point of a polygon with each of the plurality of sampling points as a vertex; and The presence or absence of defects in the ingot is determined based on the value of its center point. The determination of whether the ingot is defective includes: comparing the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber with a threshold; and determining the ingot as defective when the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber exceeds the threshold.

9. The monitoring method according to claim 8, wherein, The detection signal includes brightness information of the meniscus region.

10. The monitoring method according to claim 8, wherein, Determining whether the ingot is defective includes: The ingot is considered normal when the value of the center point obtained by the ingot is the same as the value of the center point of the chamber.

11. The monitoring method according to claim 8, wherein, Determining whether the ingot is defective includes: The ingot is determined to be normal when the difference between the obtained value of the center point of the ingot and the value of the center point of the chamber is less than or equal to the threshold.

12. The monitoring method according to claim 8, wherein, The device includes a display unit. The monitoring method includes: The display unit displays the shape of the ideal ingot, the shape of the critical ring surrounding the shape of the ideal ingot, and the shape of the ingot itself.

13. The monitoring method according to claim 8, further comprising: Real-time monitoring of defects in the ingot; as well as When the defect is detected in the ingot during monitoring, at least one piece of information related to the defect is sent to at least one site.

14. The monitoring method according to claim 8, wherein, The device includes a second sensor configured to acquire thermal image information of the ingot. The defects in the ingot include folding, and The monitoring method includes: Based on the thermal image information, it can be determined whether the bending is due to a problem with the device setup in the chamber or temperature asymmetry.

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