一种半导体器件电荷输运中同步辐射微观结构检测装置
By designing a synchrotron radiation microstructure detection device for charge transport in semiconductor devices, the charge transport behavior of semiconductors under high-energy X-rays can be observed in real time and the microstructure can be characterized. This solves the problem of difficulty in real-time observation in existing technologies and achieves efficient detection results.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FUDAN UNIVERSITY
- Filing Date
- 2023-06-23
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies lack effective means to observe the charge transport behavior and microstructure changes of semiconductor materials under high-energy X-ray irradiation in real time, especially in the context of synchrotron X-rays, where it is difficult to characterize the microstructure information of samples.
Design a synchrotron radiation microstructure detection device for charge transport in semiconductor devices. The device connects to the sample electrode via a metal probe, uses synchrotron X-rays to detect the charge transport behavior of the sample, and characterizes the microstructure of the sample through X-ray diffraction signals. The device includes a pressing screw, a housing, a fixing rod, a spring, a metal probe, a fixing bolt, a pressing rod, and wires to ensure stable contact between the probe and the sample.
This invention enables real-time detection of charge transport behavior and real-time characterization of microstructure of semiconductor devices under synchrotron X-ray environment. The device has a simple structure, small size, is easy to operate, avoids sample damage, and does not block X-rays.
Smart Images
Figure CN116794080B_ABST