基于拓扑声子晶体的拓扑逻辑门、制备和调控方法
By utilizing topological phononic crystal-based topological logic gate devices, and employing zinc oxide single crystals and phononic crystal electrode layers, topological phononic crystals were fabricated and manipulated. This enabled the coupling of acoustic waves and electrical signals with logic gate functions, solving the problems of multifunctionality and electroacoustic integration of topological phononic crystal devices, and demonstrating high robustness and anti-interference capabilities.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAZHONG UNIV OF SCI & TECH
- Filing Date
- 2023-08-14
- Publication Date
- 2026-07-17
AI Technical Summary
Existing topological phononic crystal devices have fixed structures, making it difficult to achieve multifunctionality and electroacoustic integration, and thus unable to meet the needs of intelligentization.
Design a topological logic gate device based on a topological phononic crystal. The topological phononic crystal is prepared by femtosecond laser etching using zinc oxide single crystal material and phononic crystal electrode layer. Triangular prism surface and bottom electrodes are set on its boundary. Combined with wire output port, the coupling of acoustic waves and electrical signals and logic gate function are realized.
This invention achieves multifunctionality of topological phononic crystals, possessing high robustness and anti-interference capabilities. It enables the electrical output of logic OR gates and XOR gates without altering the structure, providing a new approach to electroacoustic integration.
Smart Images
Figure CN116798399B_ABST