一种提升碳化硅开关器件散热性能的方法
By wrapping a graphene thermally conductive coating layer and an adhesive metal rod inside a silicon carbide switching device, combined with ohmic contact electrodes and a metal layer, the problem of poor heat dissipation in silicon carbide switching devices is solved, achieving a high-efficiency improvement in heat dissipation performance, making it suitable for high-power and long-life applications.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUBEI TECHPOW ELECTRIC CO LTD
- Filing Date
- 2023-06-08
- Publication Date
- 2026-07-17
AI Technical Summary
Existing silicon carbide switching devices have poor heat dissipation performance. The thermal conductivity of silicon carbide alone cannot meet the heat dissipation requirements of high-power switching devices, and it is impossible to improve heat dissipation performance without occupying device space.
A graphene thermally conductive coating is wrapped inside a silicon carbide switching device, and a metal rod is attached to the outside. Combined with ohmic contact electrodes and a metal layer, a silicon carbide switching device with high heat dissipation effect is formed through rapid thermal annealing.
It achieves a significant improvement in the heat dissipation performance of silicon carbide switching devices without increasing device space, making it suitable for high-power and long-life applications and enhancing the thermal conductivity of the devices.
Smart Images
Figure CN116798971B_ABST