阵列基板及其制备方法和显示装置
By setting the electrodes and light-shielding layer of the driving circuit area on the same layer on the array substrate, and setting the insulating layer and buffer layer on the same layer, a differentiated transistor structure is formed, which solves the problems of high short-circuit risk and increased process cost in the driving circuit area and display area of OLED display devices, and improves product yield and production adaptability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
- Filing Date
- 2023-06-27
- Publication Date
- 2026-07-17
AI Technical Summary
In existing OLED display devices, the difference in transistor structure between the driving circuit area and the display area of the array substrate leads to a high risk of short circuits, which increases process costs and reduces product yield.
The first electrode of the driving circuit area and the light-shielding layer of the display area are disposed on the same layer on the array substrate, and the first insulating layer and the buffer layer are disposed on the same layer. Different gate insulating layers and etching barrier layers of different thicknesses are used to form a differentiated transistor structure, which ensures display performance while reducing the risk of short circuit.
This improved product yield, avoided increased process costs due to structural differences, and adapted to actual production needs.
Smart Images
Figure CN116799011B_ABST