一种用于GaN MIS-HEMT功率器件的短路保护方法及保护电路
By detecting the gate leakage charge of GaN MIS-HEMT devices through differential sampling and integration circuits, and using comparators and latches to achieve hard shutdown, the problems of complex, high cost and weak anti-interference ability of short circuit protection in the prior art are solved, and fast and reliable short circuit protection is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHONGQING UNIV
- Filing Date
- 2023-07-14
- Publication Date
- 2026-07-17
AI Technical Summary
Existing short-circuit protection methods for GaN MIS-HEMT power devices are susceptible to parasitic parameters of PCB layout and device package structure, resulting in complex designs, high costs, long response times, and weak anti-interference capabilities.
The voltage of the gate drive resistor is obtained by a differential sampling circuit, the gate leakage charge is obtained by an integrator circuit, the short circuit fault signal is detected by a comparator, and hard shutdown is achieved by an SR latch and a digital isolator. The output signal of the latch controls the driver chip to enable operation.
It achieves fast short-circuit protection, reduces delay time, enhances device reliability, simplifies circuit design, improves anti-interference capability, and is suitable for medium and high voltage environments.
Smart Images
Figure CN116799745B_ABST