Low reflection layer, optical lens assembly, image capturing device and electronic device
Patent Information
- Application Number
- CN202310281872.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2022-03-23
- Filing Date
- 2023-03-22
- Publication Date
- 2026-10-27
- Estimated Expiration
- 2043-03-22
AI Technical Summary
在非移动装置光学镜头领域具有其他降低反射率技术,其通过蚀刻膜层表面以产生具多孔洞的微结构,但其结构支撑性不足,易因外力导致膜层变形而大幅降低抗反射效果
Smart Images

Figure CN116804775B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to an optical lens assembly, an image capturing device, and an electronic device, particularly to an optical lens assembly, an image capturing device, and an electronic device comprising an optical lens or an optical element, wherein the surface of the optical lens or the optical element has a low-reflection layer. Background Technology
[0002] In recent years, it has become increasingly popular to take photos using miniature optical lenses on mobile devices. However, mobile devices are often exposed to strong sunlight when used outdoors, which causes the optical lenses to be significantly degraded in image quality by strong non-imaging stray light.
[0003] Conventional strategies involve applying techniques such as ink coating, sandblasting, and coating to the surface of opaque optical elements that make up optical lenses to reduce reflectivity and eliminate stray light. While this improves optical image quality, it is still insufficient to eliminate high-intensity stray light. Other reflectivity reduction techniques exist in the field of non-mobile device optical lenses, which create porous microstructures by etching the film surface. However, these structures lack structural support and are easily deformed by external forces, significantly reducing their anti-reflective effect. Further, while conventional techniques employ multi-layer coatings to achieve even better anti-reflective effects, the complex manufacturing process and high coating costs limit their widespread application in the optical lens industry. Summary of the Invention
[0004] The optical lens assembly disclosed herein has a low-reflection layer disposed on at least one surface of an optical lens or optical element. The surface of the low-reflection layer is roughened by a process (e.g., dry etching), and then nucleation reactions are performed on the surface with an appropriate material (e.g., physical vapor deposition, chemical vapor deposition, vacuum evaporation, sputtering, and ion plating) to create a nano-crystallization surface structure through a crystallization process. Furthermore, since the low-reflection layer surface has nano-crystallized particles of appropriate size, it can destroy and weaken the intensity of stray light incident on the surface. By selecting a nano-crystallized material with an appropriate refractive index, the refractive index between the surface of the optical lens or optical element and the air can achieve a gradual distribution, allowing light to enter smoothly but not be reflected, which helps maintain the ultra-low reflectivity of the surface of the optical lens or optical element and significantly improves the optical imaging quality of the optical lens assembly. Furthermore, the outer hydrophobic layer design helps prevent adhesive diffusion during the assembly of optical lens assemblies, thus preventing severe reflections and protecting the internal reflective layer structure without affecting the ultra-low reflection effect. Therefore, the technology disclosed herein is suitable for application on the surfaces of various components in optical lens assemblies and image capturing devices in mobile devices, offering significant advantages in improving optical imaging quality and cost-effectiveness for wide application.
[0005] An optical lens assembly is provided according to one embodiment of the present disclosure, comprising at least one optical lens and at least one optical element. At least one surface of the optical lens or optical element has a low-reflection layer comprising a roughening layer, a nanocrystalline particle, and a hydrophobic layer. The nanocrystalline particle is disposed between the roughening layer and the hydrophobic layer, and the hydrophobic layer is further away from the surface of the optical lens or optical element than the nanocrystalline particle. The material of the nanocrystalline particle comprises at least SiO2. The average particle size of the nanocrystalline particle is DC, and the surface having the low-reflection layer has a reflectance of R70100 at wavelengths of 700 nm to 1000 nm, which satisfies the following conditions: 200 nm < DC < 1000 nm; and 0% < R70100 ≤ 2.2%.
[0006] According to another embodiment of this disclosure, an imaging device is provided, comprising an optical lens assembly and at least one carrier. At least one surface of the optical lens assembly or the carrier has a low-reflection layer, comprising a roughening layer, nanocrystalline particles, and a hydrophobic layer. The nanocrystalline particles are disposed between the roughening layer and the hydrophobic layer, and the hydrophobic layer is further away from the surface of the optical lens assembly or the carrier than the nanocrystalline particles. The material of the nanocrystalline particles comprises at least SiO2. The average particle size of the nanocrystalline particles is DC, and the surface having the low-reflection layer has a reflectance of R70100 at wavelengths of 700 nm to 1000 nm, which satisfies the following conditions: 200 nm < DC; and 0% < R70100 ≤ 2.2%.
[0007] According to another aspect of this disclosure, an electronic device is provided, comprising the image capturing device described above.
[0008] According to another embodiment of this disclosure, a low-reflection layer is provided, comprising a roughening layer, nanocrystalline particles, and a hydrophobic layer, wherein the nanocrystalline particles are disposed between the roughening layer and the hydrophobic layer. The material of the nanocrystalline particles contains at least SiO2. The average particle size of the nanocrystalline particles is DC, and the reflectance of a surface having the low-reflection layer at wavelengths of 400 nm - 1000 nm is R40100, and the reflectance of the surface having the low-reflection layer at wavelengths of 700 nm - 1000 nm is R70100, which satisfies the following conditions: 200 nm < DC < 1000 nm; 0% < R40100 ≤ 2.4%; and 0% < R70100 ≤ 2.2%. Attached Figure Description
[0009] To make the above and other objects, features, advantages and embodiments of this disclosure more apparent and understandable, the accompanying drawings are described below:
[0010] Figure 1 This is an image of the substrate surface of the first comparative example;
[0011] Figure 2 It is a graph showing the relationship between the reflectivity of the surface with the reflective layer and the wavelength in the first comparative example;
[0012] Figure 3 This is a graph showing the relationship between the reflectivity of the surface with the reflective layer and the wavelength in the second comparative example;
[0013] Figure 4 This is an image of the substrate surface of the first embodiment;
[0014] Figure 5 It is a graph showing the relationship between the reflectivity of the surface with the low-reflectivity layer and the wavelength in the first embodiment;
[0015] Figure 6 This is an image of the crystalline surface of the second embodiment;
[0016] Figure 7 This is a graph illustrating the relationship between the reflectivity of the surface with the low-reflectivity layer and the wavelength in the second embodiment;
[0017] Figure 8 This is a graph illustrating the relationship between the reflectivity of the surface with the low-reflectivity layer and the wavelength in the third embodiment;
[0018] Figure 9 This is an image of the crystalline surface of the fourth embodiment;
[0019] Figure 10 This is a graph illustrating the relationship between the reflectivity of the surface with the low-reflectivity layer and the wavelength in the fourth embodiment;
[0020] Figure 11 A perspective view of an imaging device according to the fifth embodiment of this disclosure is shown;
[0021] Figure 12A A schematic diagram showing one side of an electronic device according to the sixth embodiment of this disclosure;
[0022] Figure 12B Drawing according to Figure 12A A schematic diagram of the other side of the electronic device;
[0023] Figure 12C Drawing according to Figure 12A A schematic diagram of the electronic device in the middle;
[0024] Figure 13 A schematic diagram showing one side of an electronic device according to the seventh embodiment of this disclosure;
[0025] Figure 14 A schematic diagram showing one side of an electronic device according to the eighth embodiment of this disclosure;
[0026] Figure 15A A schematic diagram illustrating one side of an electronic device according to the ninth embodiment of this disclosure;
[0027] Figure 15B Drawing according to Figure 15A A schematic diagram of the other side of the electronic device;
[0028] Figure 16A A schematic diagram illustrating an arrangement of optical path deflection elements in an optical lens assembly in accordance with this disclosure;
[0029] Figure 16B A schematic diagram illustrating another configuration of the optical path deflection element in an optical lens assembly according to this disclosure;
[0030] Figure 16C A schematic diagram illustrating a configuration relationship of two optical path deflection elements in an optical lens assembly in accordance with the present disclosure;
[0031] Figure 16D A schematic diagram illustrating another configuration of the two optical path deflection elements in an optical lens assembly according to this disclosure; and
[0032] Figure 16E A schematic diagram illustrating another configuration of the optical path reversing element in an optical lens assembly in accordance with this disclosure.
[0033] [Symbol Explanation]
[0034] 100, 110, 120, 130, 140, 310, 320, 330, 410, 420, 430, 440, 450, 460, 470, 480, 490, 510, 520, 530, 540: Image capturing device
[0035] 200, 300, 400, 500: Electronic devices
[0036] 101: Optical Lens Group
[0037] 102: Drive unit assembly
[0038] 103: Electronic photosensitive element
[0039] 104: Image Stabilization Module
[0040] 201, 301, 401: Flash module
[0041] 202: Focusing Assist Module
[0042] 203: Image Signal Processor
[0043] 204, 504: User Interface
[0044] 205: Image Software Processor
[0045] 206: Subject
[0046] OA1: First optical axis
[0047] OA2: Second optical axis
[0048] OA3: Third optical axis
[0049] LF, LF1, LF2: Optical path switching elements
[0050] LG: Lens Group
[0051] IMG: Imaging Surface
[0052] FL: Filter element
[0053] DC: Average particle size of nanocrystalline particles
[0054] Tc: Height of nanocrystalline particles
[0055] R40100: Surface with low reflectance layer has a reflectivity of 400 nm - 1000 nm.
[0056] R70100: Surface with low reflectance layer has a reflectivity of 700 nm - 1000 nm.
[0057] R80100: Surface with low reflectivity at wavelengths of 800 nm - 1000 nm
[0058] R90100: Surface with low reflectance layer has a reflectivity of 900 nm - 1000 nm.
[0059] R4060: Surface with low reflectivity at wavelengths of 400 nm - 600 nm
[0060] R4070: Surface with low reflectivity at wavelengths of 400 nm - 700 nm
[0061] R5060: Surface with low reflectance layer has a reflectivity of 500 nm - 600 nm.
[0062] R5070: Surface with low reflectance layer has a reflectivity of 500 nm - 700 nm. Detailed Implementation
[0063] One embodiment of this disclosure provides an optical lens assembly comprising at least one optical lens and at least one optical element. At least one surface of the optical lens or optical element has a low-reflection layer comprising a roughening layer, a nanocrystalline particle, and a hydrophobic layer. The nanocrystalline particle is disposed between the roughening layer and the hydrophobic layer, and the hydrophobic layer is further away from the surface of the optical lens or optical element than the nanocrystalline particle. The material of the nanocrystalline particle comprises at least SiO2. The average particle size of the nanocrystalline particle is DC, which satisfies the following condition: 200 nm < DC < 1000 nm. In this way, a low-reflection layer is provided on at least one surface of the optical lens or optical element of the optical lens assembly, and the surface of the low-reflection layer is roughened. Then, a nucleation reaction is carried out on the surface with an appropriate material to create a surface structure with nanocrystalline particles through a crystallization process. Since the surface of the low-reflection layer has nanocrystalline particles of appropriate size, it can destroy and weaken the intensity of stray light incident on the surface. By selecting a nanocrystalline material with an appropriate refractive index, the refractive index between the surface of the optical lens or optical element and the air can be gradually distributed, so that light can be incident smoothly but cannot be reflected. This helps to maintain the ultra-low reflectivity of the surface of the optical lens or optical element, significantly improving the optical imaging quality of the optical lens assembly. Furthermore, by coating the outer layer of the low-reflection layer with a hydrophobic layer, it helps to prevent the spread of adhesive during the assembly of the optical lens assembly, which would cause severe reflection. This protects the internal reflective layer structure and does not affect the ultra-low reflection effect.
[0064] Another embodiment of this disclosure provides an imaging device comprising an optical lens assembly and at least one carrier. At least one surface of the optical lens assembly or the carrier has a low-reflection layer comprising a roughening layer, a nanocrystalline particle, and a hydrophobic layer. The nanocrystalline particle is disposed between the roughening layer and the hydrophobic layer, and the hydrophobic layer is further away from the surface of the optical lens assembly or the carrier than the nanocrystalline particle. The material of the nanocrystalline particle comprises at least SiO2. The average particle size of the nanocrystalline particle is DC, which satisfies the following condition: 200 nm < DC. Therefore, a low-reflection layer is formed on at least one surface of the optical lens assembly or carrier of the imaging device. The surface of the low-reflection layer is roughened, and a nucleation reaction is carried out on the surface with an appropriate material to create a surface structure with nanocrystalline particles through a crystallization process. Because the surface of the low-reflection layer has nanocrystalline particles of appropriate size, it can destroy and weaken the intensity of stray light incident on the surface. By selecting a nanocrystalline material with an appropriate refractive index, the refractive index between the surface of the optical lens assembly or carrier and the air can be gradually distributed, allowing light to enter smoothly but not be reflected. This helps maintain the ultra-low reflectivity of the surface of the optical lens assembly or carrier, significantly improving the optical imaging quality of the imaging device. Furthermore, by coating the outer layer with a hydrophobic layer, it helps prevent the spread of adhesive during the assembly of the imaging device, which would cause severe reflection, thus protecting the internal reflective layer structure without affecting the ultra-low reflectivity effect.
[0065] Another embodiment of this disclosure provides a low-reflection layer comprising a roughening layer, nanocrystalline particles, and a hydrophobic layer, wherein the nanocrystalline particles are disposed between the roughening layer and the hydrophobic layer. The nanocrystalline particles are made of a material containing at least SiO2. The average particle size of the nanocrystalline particles is DC, and the surface of the low-reflection layer has a reflectance of R40100 at wavelengths of 400 nm to 1000 nm, which satisfies the following conditions: 200 nm < DC < 1000 nm; and 0% < R40100 ≤ 2.4%. By applying a roughening process to the surface of the low-reflection layer and then performing a nucleation reaction on the surface with a suitable material, a surface structure with nanocrystalline particles is created through a crystallization process. Because the surface of the low-reflection layer has nanocrystalline particles of appropriate size, the intensity of stray light incident on the surface can be destroyed and weakened. Furthermore, by selecting a nanocrystalline material with an appropriate refractive index, light can be smoothly incident on the surface but cannot be reflected, thus contributing to achieving an ultra-low reflectance. Furthermore, applying a hydrophobic coating to the outer layer helps prevent adhesive diffusion that could lead to severe reflection, thus protecting the internal reflective layer structure without affecting the ultra-low reflection effect.
[0066] The average particle size of the nanocrystalline particles disclosed herein is DC, which can satisfy the following conditions: 200 nm < DC < 800 nm. Alternatively, it can satisfy the following conditions: 200 nm < DC < 600 nm. Alternatively, it can satisfy the following conditions: 200 nm < DC < 400 nm. Alternatively, it can satisfy the following conditions: 240 nm < DC < 350 nm.
[0067] The hydrophobic layer disclosed herein may be selected from at least one polyurethane compound, polyimide compound, organosilane compound, fluoroalkane compound, fluoroalkenyl ether polymer, fluorosilane compound, or fluoroacrylate compound. Therefore, by coating the outer layer with a hydrophobic layer, it helps prevent the diffusion of adhesives or aqueous solutions on the surface of the low-reflection layer, which would cause severe reflection, thus protecting the internal reflective layer structure without affecting the ultra-low reflectivity.
[0068] The nanocrystalline particles disclosed herein can have a multilayer structure, comprising at least one high-refractive-index film layer and at least one low-refractive-index film layer. The high-refractive-index and low-refractive-index film layers are alternately stacked, with the low-refractive-index film layer positioned closer to the hydrophobic layer than the high-refractive-index film layer, and the primary material of the low-refractive-index film layer is SiO2. This alternating stacking of high-refractive-index and low-refractive-index film layers allows light to be destructively interfered with at the film surface, thereby reducing reflected light.
[0069] The height of the nanocrystalline particles of the present disclosure is Tc, which may satisfy the following condition: 200 nm < Tc < 800 nm. Thereby, by designing an appropriate height of the nanocrystalline particles, it is beneficial to maintain the structural integrity of the nanocrystalline particles and achieve the optimal low reflection effect. Alternatively, it may satisfy the following condition: 200 nm < Tc < 700 nm. Alternatively, it may satisfy the following condition: 200 nm < Tc < 600 nm. Alternatively, it may satisfy the following condition: 200 nm < Tc < 500 nm. Alternatively, it may satisfy the following condition: 240 nm < Tc < 400 nm.
[0070] The reflectivity of the surface with the low reflection layer of the present disclosure at a wavelength of 400 nm - 1000 nm is R40100, which may satisfy the following condition: 0% < R40100 ≤ 2.0%. Thereby, the reflection effect of light in a wide wavelength domain on the surface can be effectively controlled, which is beneficial to increasing the low reflection effect in a wide wavelength range. Alternatively, it may satisfy the following condition: 0% < R40100 ≤1.5%. Alternatively, it may satisfy the following condition: 0% < R40100 ≤ 1.0%. Alternatively, it may satisfy the following condition: 0.1% ≤R40100 ≤ 0.7%.
[0071] The reflectivity of the surface with the low reflection layer of the present disclosure at a wavelength of 400 nm - 700 nm is R4070, which may satisfy the following condition: 0% < R4070 ≤ 2.5%. Thereby, the reflection effect of light in the visible light band on the surface can be effectively controlled, which is beneficial to increasing the low reflection effect in the blue, green and red visible light regions. Alternatively, it may satisfy the following condition: 0% < R4070≤ 2.0%. Alternatively, it may satisfy the following condition: 0% < R4070 ≤ 1.5%. Alternatively, it may satisfy the following condition: 0% <R4070 ≤ 1.0%. Alternatively, it may satisfy the following condition: 0.1% ≤ R4070 ≤ 0.7%.
[0072] The reflectivity of the surface with the low reflection layer of the present disclosure at a wavelength of 500 nm - 700 nm is R5070, which may satisfy the following condition: 0% < R5070 ≤ 2.4%. Thereby, the reflection effect of light in a specific wavelength range on the surface can be effectively controlled, which is beneficial to increasing the low reflection effect in the specific wavelength range. Alternatively, it may satisfy the following condition: 0% < R5070 ≤2.0%. Alternatively, it may satisfy the following condition: 0% < R5070 ≤ 1.5%. Alternatively, it may satisfy the following condition: 0% <R5070 ≤ 1.0%. Alternatively, it may satisfy the following condition: 0.1% ≤ R5070 ≤ 0.7%.
[0073] For the surface with the low-reflection layer of the present disclosure, the reflectance at a wavelength of 400 nm - 600 nm is R4060, which can satisfy the following condition: 0% < R4060 ≤ 2.5%. Thereby, stray light can be effectively absorbed, and the low reflectance of the surface in a specific wavelength range can be maintained. Alternatively, it can satisfy the following condition: 0% < R4060 ≤ 2.0%. Alternatively, it can satisfy the following condition: 0% < R4060 ≤ 1.5%. Alternatively, it can satisfy the following condition: 0% < R4060 ≤ 1.0%. Alternatively, it can satisfy the following condition: 0.1% ≤ R4060 ≤ 0.7%.
[0074] For the surface with the low-reflection layer of the present disclosure, the reflectance at a wavelength of 500 nm - 600 nm is R5060, which can satisfy the following condition: 0% < R5060 ≤ 2.4%. Thereby, stray light in a specific wavelength range, such as stray light in the green visible light wavelength range, can be effectively absorbed, and the low reflectance of the surface can be maintained. Alternatively, it can satisfy the following condition: 0% < R5060 ≤ 2.0%. Alternatively, it can satisfy the following condition: 0% < R5060 ≤ 1.5%. Alternatively, it can satisfy the following condition: 0% < R5060 ≤ 1.0%. Alternatively, it can satisfy the following condition: 0.1% ≤ R5060 ≤ 0.7%.
[0075] For the surface with the low-reflection layer of the present disclosure, the reflectance at a wavelength of 700 nm - 1000 nm is R70100, which can satisfy the following condition: 0% < R70100 ≤ 2.2%. Thereby, the reflection effect of light in the near-infrared band on the surface can be effectively controlled, which is beneficial to enhancing the low-reflection effect in the long wavelength range. Alternatively, it can satisfy the following condition: 0% < R70100 ≤ 2.0%. Alternatively, it can satisfy the following condition: 0% < R70100 ≤ 1.6%. Alternatively, it can satisfy the following condition: 0% < R70100 ≤ 1.2%. Alternatively, it can satisfy the following condition: 0.1% ≤ R70100 ≤ 1.0%.
[0076] The surface with a low-reflectivity layer disclosed herein has a reflectivity of R80100 at wavelengths of 800 nm to 1000 nm, which satisfies the following condition: 0% < R80100 ≤ 2.2%. This effectively absorbs stray light in the near-infrared wavelength range, maintaining the surface's low reflectivity. Alternatively, it can satisfy the following conditions: 0% < R80100 ≤ 2.0%. Alternatively, it can satisfy the following conditions: 0% < R80100 ≤ 1.6%. Alternatively, it can satisfy the following conditions: 0% < R80100 ≤ 1.2%. Alternatively, it can satisfy the following conditions: 0.1% ≤ R80100 ≤ 1.0%.
[0077] The surface with a low-reflectivity layer disclosed herein has a reflectivity of R90100 at wavelengths of 900 nm to 1000 nm, which satisfies the following condition: 0% < R90100 ≤ 2.2%. This effectively absorbs stray light in the near-infrared wavelength range, maintaining the surface's low reflectivity. Alternatively, it can satisfy the following conditions: 0% < R90100 ≤ 2.0%. Alternatively, it can satisfy the following conditions: 0% < R90100 ≤ 1.8%. Alternatively, it can satisfy the following conditions: 0% < R90100 ≤ 1.5%. Alternatively, it can satisfy the following conditions: 0.1% ≤ R90100 ≤ 1.3%.
[0078] The optical lens described herein may have a low-reflection layer in the ineffective area of the object-side surface facing the optical lens group, the ineffective area of the image-side surface facing the optical lens group, or the outer peripheral surface connecting the object-side surface and the image-side surface, which can effectively reduce stray light generated by peripheral reflection of light.
[0079] This disclosure allows for the appropriate placement of one or more optical elements to restrict the form of light passing through the optical lens assembly. These optical elements can be light-shielding elements, annular spacers, lens elements, cover glass, blue glass, filters (color filters), light path deflectors, prisms, or mirrors, but are not limited to these. Furthermore, the optical elements can be monolithic, composite components, or thin films, but are not limited to these methods. The optical elements can be positioned on the object side, image side, or between optical lenses of the optical lens assembly to control the passage of specific forms of light, thereby meeting application requirements.
[0080] The light-shielding element described in this disclosure can be placed in front of or behind an optical lens, and is typically a dark-colored thin ring that helps absorb stray light.
[0081] The annular spacer element described herein can be disposed in front of and behind optical lenses to provide a larger spacing between the optical lenses, which helps to adjust the appropriate spacing between the optical lenses and to securely assemble the optical lenses.
[0082] The lens barrel element described in this disclosure is a cylindrical shell that can support optical lenses, light-shielding elements, and annular spacers, and has the function of fixing and protecting the internal components.
[0083] The carrier described in this disclosure can be any non-optical lens or non-optical element accessible to the optical path in the imaging device. It can be the lens mount of an optical lens group for fixing or supporting the imaging device and the optical lens group. Alternatively, it can be a microlens on the photosensitive element, the periphery of the photosensitive element substrate, or a glass sheet for protecting the photosensitive element. The carrier can be disposed on the object side, image side, or around the imaging device, which helps to reduce reflected light generated after peripheral light incident on the carrier surface.
[0084] The dry etching technology described in this disclosure is a roughening process, which can be a liquid-free etching technology, and is divided into physical sputtering (ion milling), active ion etching, and plasma etching. Physical sputtering, also known as ion milling or ion polishing, performs anisotropic etching and surface damage through physical kinetic energy transfer. The environment is usually less than 100 millitorr, and argon (Ar) and oxygen (oxygen) can be used as gases. The workpiece is bombarded at an angle with high excitation energy ions through bombardment and sputtering effects, and the atoms on the material surface are peeled off one by one. It is a nanometer and atomic scale processing technology.
[0085] The roughened layer described herein can be roughened using a dry etching technique to create multiple irregular pores in the internal structure and surface of the roughened layer, thereby achieving a roughening effect. This provides light with multiple reflections due to the unevenness of the internal structure and surface, forming a light trap structure, which helps to increase the area of the light absorption region and reduce total internal reflection.
[0086] The rough layer material described in this disclosure can be a dark coating with light absorption effect, such as a black ink spraying layer formed by quick-drying ink based on epoxy resin, a blackened coating layer formed by chemical vapor deposition, or a photoresistive coating layer. The coating has the characteristics of being easy to apply and adhere to the surface of the component and is suitable for mass production.
[0087] The nucleation reaction described herein can form a uniform nanolayered film or nanocrystalline particles with a multilayer structure, depending on the surface roughness of the material to be coated.
[0088] The average particle size of the nanocrystalline particles described in this disclosure was determined by observing the top view of the low-reflection layer using an electron microscope. Particles closer to the air and conforming to granular or spherical shapes were selected, and the maximum diameter of a single particle was measured, with a value of 36 μm. 2 At least 5 objects within the area range should be selected for average calculation.
[0089] Each image of the crystal surface disclosed herein is approximately 6 μm wide and 6 μm long, with a total area of approximately 36 μm. 2 .
[0090] The height of the nanocrystalline particles described in this disclosure is calculated by observing the cross-section of the low-reflection layer with an electron microscope. If the nanocrystalline particle to be tested is selected to contact the rough layer, the maximum height in the direction perpendicular to the contact surface between the nanocrystalline particle to be tested and the rough layer is measured. If the nanocrystalline particle to be tested is selected to contact at least one other nanocrystalline particle, the maximum height in the direction perpendicular to the contact surface between the nanocrystalline particle to be tested and the at least one other nanocrystalline particle is measured.
[0091] The materials of the nanocrystalline particles described in this disclosure can be metal or non-metal oxides, such as SiO2, Al2O3, TiO2, Ta2O5, TeO2, ZnO, ZrO2, GeO2, MgO, etc.; the nanocrystalline materials can also be metal nitrides, such as AlN, SiN, Si3N4, etc.; the nanocrystalline materials can also be metal fluorides, such as MgF2, CaF2, etc.
[0092] The hydrophobic layer described herein may be a fluorinated alkyl polymer such as a polyurethane compound containing isocyanate groups, a polyimide compound containing cyclic imide groups, an organosilane compound containing alkoxy groups, a fluorinated polyurethane compound, a perfluoroalkane compound, a fluoroolefin ether polymer, a fluorinated silane compound, or a fluorinated acrylate compound. Examples include polyurethane (PUR), polyisopropylacrylamide (PNIPA), polytetrafluoroethylene (PTFE), perfluorooctanoic acid (PFOA), perfluorooctane sulfonic acid (PFOS), triethoxy(1H,1H,2H,2H-nonafluorohexyl)silane, and trifluoroethyl methacrylate (2,2,2-trifluoroethyl 2-methylprop-2-enoate).
[0093] The optical lens assembly disclosed herein can also selectively include at least one element with a light-path-deflecting function, such as a prism or mirror, between the subject and the imaging plane in the optical path. This provides greater spatial flexibility in the optical lens assembly, allowing the thinner and lighter electronic device to be made less constrained by the overall optical length of the optical lens assembly. For further explanation, please refer to... Figure 16A as well as Figure 16B ,in Figure 16A A schematic diagram illustrating one configuration of the optical path deflection element LF in an optical lens assembly according to this disclosure is provided. Figure 16B A schematic diagram illustrating another configuration of the optical path deflection element LF in an optical lens assembly, according to this disclosure. (See diagram below.) Figure 16A as well as Figure 16B As shown, the optical lens assembly can travel along the light path from the subject (not shown) to the imaging plane IMG, and sequentially includes a first optical axis OA1, a light path deflection element LF, a second optical axis OA2, and a filter element FL. The light path deflection element LF is disposed between the subject and the lens group LG of the optical lens assembly, and the incident and exit surfaces of the light path deflection element LF can be... Figure 16A The image shown is planar, or as... Figure 16B The surface shown is curved. Additionally, please refer to... Figure 16C as well as Figure 16D ,in Figure 16CA schematic diagram illustrating one configuration of the two optical path deflection elements LF1 and LF2 in an optical lens assembly according to this disclosure is provided. Figure 16D A schematic diagram illustrating another configuration of the two optical path deflecting elements LF1 and LF2 in an optical lens assembly, according to this disclosure. (See diagram below.) Figure 16C as well as Figure 16D As shown, the optical lens assembly can also follow the light path from the subject (not shown) to the imaging plane IMG, and sequentially includes a first optical axis OA1, a light path reversing element LF1, a second optical axis OA2, a light path reversing element LF2, a filter element FL, and a third optical axis OA3. The light path reversing element LF1 is disposed between the subject and the lens group LG of the optical lens assembly, and the light path reversing element LF2 is disposed between the lens group LG of the optical lens assembly and the imaging plane IMG. Furthermore, the light path reversing element LF2 can... Figure 16C The image shown is of a prism, or as... Figure 16D The image shown is of a mirror. Additionally, please refer to... Figure 16E ,in Figure 16E A schematic diagram illustrating another configuration of the optical path deflection element LF in an optical lens assembly, according to this disclosure. For example... Figure 16E As shown, the optical lens assembly can also follow the light path from the subject (not shown) to the imaging plane IMG, and sequentially includes a first optical axis OA1, a filter element FL, a light path deflection element LF, a second optical axis OA2, and a third optical axis OA3. The light path deflection element LF is disposed between the lens group LG and the imaging plane IMG of the optical lens assembly, and the light path can be as follows... Figure 16E The optical path reversal element LF is shown to perform a secondary reversal. The optical lens assembly may also selectively be configured with more than three optical path reversal elements. This disclosure is not limited to the type, number and position of the optical path reversal elements disclosed in the figures.
[0094] The optical lens assembly disclosed herein can also be applied in various electronic devices such as 3D image capture, digital cameras, mobile products, digital tablets, smart TVs, network monitoring equipment, motion-sensing game consoles, dashcams, reversing cameras, wearable products, and drones.
[0095] The technical features disclosed above can be combined and configured to achieve the corresponding effects.
[0096] Another embodiment of this disclosure provides an electronic device including the aforementioned image capturing device. This improves image quality. Furthermore, the electronic device may further include a control unit, a display unit, a storage unit, a temporary storage unit, or a combination thereof.
[0097] Based on the above implementation methods, specific embodiments are described in detail below.
[0098] <First Comparative Example>
[0099] Please refer to Figure 1 This is an image of the substrate surface of the first comparative example. The substrate of the first comparative example has a reflective layer, which sequentially includes a roughening layer and nanocrystalline particles from the surface of the substrate upwards. A layer of adhesive is applied to the reflective layer, and the nanocrystalline particles are disposed between the roughening layer and the adhesive. Specifically, the substrate used in the reflective layer design of the first comparative example can be any optical lens, any optical element, or any carrier described in this disclosure. Figure 1 As shown, because the surface of the substrate of the first comparative example does not have the low-reflection layer design disclosed herein, the upper half of the substrate surface suffers from severe reflection due to the adhesive.
[0100] In the first comparative example, the nanocrystalline particles have a multilayer structure, and the details of each layer of the reflective layer in the first comparative example are shown in Table 1A.
[0101]
[0102] Please refer to the above as well. Figure 2 Compared with Table 1B, Figure 2 This is a graph showing the relationship between the reflectivity of the surface with the reflective layer in the first comparative example and the wavelength, while Table 1B shows the reflectivity values of the surface with the reflective layer in the first comparative example at wavelengths from 400 nm to 1000 nm.
[0103]
[0104]
[0105]
[0106]
[0107]
[0108] Please refer to Table 1C, which shows the values of R4060, R4070, R5060, R5070, R40100, R70100, R80100, and R90100 for the reflective surface of the first comparative example. R4060 represents the reflectivity of the surface with the low-reflectivity layer at wavelengths of 400 nm - 600 nm; R4070 represents the reflectivity of the surface with the low-reflectivity layer at wavelengths of 400 nm - 700 nm; R5060 represents the reflectivity of the surface with the low-reflectivity layer at wavelengths of 500 nm - 600 nm; R5070 represents the reflectivity of the surface with the low-reflectivity layer at wavelengths of 500 nm - 700 nm; R40100 represents the reflectivity of the surface with the low-reflectivity layer at wavelengths of 400 nm - 1000 nm; and R70100 represents the reflectivity of the surface with the low-reflectivity layer at wavelengths of 700 nm - 1000 nm. The reflectance is measured in nm. R80100 is the reflectance of the surface with the low-reflection layer at wavelengths of 800 nm - 1000 nm, and R90100 is the reflectance of the surface with the low-reflection layer at wavelengths of 900 nm - 1000 nm. Furthermore, if the definitions of the data in the tables of the following comparative examples or embodiments are the same as those in Table 1C, they will not be repeated.
[0109]
[0110] <Second Comparative Example>
[0111] The substrate of the second comparative example has a reflective layer on its surface. The reflective layer includes, from the surface of the substrate upwards, a roughening layer and a nanocrystalline particle, and an adhesive layer is applied to the reflective layer, with the nanocrystalline particle disposed between the roughening layer and the adhesive. Specifically, the substrate used in the reflective layer design of the second comparative example can be any optical lens, any optical element, or any carrier described in this disclosure.
[0112] In the second comparative example, the nanocrystalline particles have a multilayer structure, and the details of each layer of the reflective layer in the second comparative example are shown in Table 2A.
[0113]
[0114] Please refer to the above as well. Figure 3 Compared with Table 2B, Figure 3 Table 2B shows the relationship between the reflectivity of the surface with the reflective layer in the second comparative example and the wavelength, while Table 2B shows the reflectivity values of the surface with the reflective layer in the second comparative example at wavelengths from 400 nm to 1000 nm.
[0115]
[0116]
[0117]
[0118]
[0119]
[0120] Please refer to Table 2C, which shows the values of R4060, R4070, R5060, R5070, R40100, R70100, R80100 and R90100 for the reflective surface of the second comparative example.
[0121]
[0122] <First Embodiment>
[0123] Please refer to Figure 4 This is an image of the substrate surface of the first embodiment. The substrate surface of the first embodiment has a low-reflection layer, which sequentially includes a roughening layer, a nanocrystalline particle, and a hydrophobic layer from the substrate surface upwards. An adhesive layer is applied to the low-reflection layer, and the nanocrystalline particle is disposed between the roughening layer and the hydrophobic layer. Specifically, the substrate used in the low-reflection layer design of the first embodiment can be any optical lens, any optical element, or any carrier described in this disclosure. Figure 4 As shown, the surface of the substrate in the first embodiment can effectively maintain the appearance of blackness and ultra-low reflectivity.
[0124] In the first embodiment, the nanocrystalline particles have a multilayer structure, and the details of each layer of the low-reflection layer in the first embodiment are shown in Table 3A.
[0125]
[0126] Please refer to the above as well. Figure 5 Compared with Table 3B, Figure 5 Table 3B shows the relationship between the reflectance of the surface with the low reflectance layer in the first embodiment and the wavelength, while Table 3B shows the reflectance values of the surface with the low reflectance layer in the first embodiment at wavelengths from 400 nm to 1000 nm.
[0127]
[0128]
[0129]
[0130]
[0131]
[0132] Please refer to Table 3C, which contains the values of R4060, R4070, R5060, R5070, R40100, R70100, R80100, and R90100 for the surface with the low-reflection layer in the first embodiment.
[0133]
[0134] <Second Embodiment>
[0135] The substrate of the second embodiment has a low-reflection layer on its surface. The low-reflection layer includes, from the surface of the substrate upwards, a roughening layer, a nanocrystalline particle, and a hydrophobic layer, with the nanocrystalline particle disposed between the roughening layer and the hydrophobic layer. Specifically, the substrate used in the low-reflection layer design of the second embodiment can be any optical lens, any optical element, or any carrier described in this disclosure.
[0136] In the second embodiment, the nanocrystalline particles have a multilayer structure, and the details of each layer of the low-reflection layer in the second embodiment are shown in Table 4A.
[0137]
[0138] Please refer to the above as well. Figure 6 Compared with Table 4B, Figure 6 Table 4B shows the image of the crystalline surface of the second embodiment, while Table 4B shows the particle size values of the nanocrystalline particles of the second embodiment.
[0139]
[0140] Please refer to the above as well. Figure 7 Compared with Table 4C, Figure 7 This is a graph showing the relationship between the reflectivity and wavelength of the surface with the low-reflectivity layer in the second embodiment, while Table 4C shows the reflectivity values of the surface with the low-reflectivity layer in the second embodiment at wavelengths from 400 nm to 1000 nm.
[0141]
[0142]
[0143]
[0144]
[0145]
[0146] Please refer to Table 4D, which contains the values of R4060, R4070, R5060, R5070, R40100, R70100, R80100, and R90100 for the surface with the reflective layer in the second embodiment.
[0147]
[0148] <Third Embodiment>
[0149] The substrate of the third embodiment has a low-reflection layer on its surface. The low-reflection layer includes, from the surface of the substrate upwards, a roughening layer, a nanocrystalline particle, and a hydrophobic layer. An adhesive layer is applied to the low-reflection layer, and the nanocrystalline particle is disposed between the roughening layer and the hydrophobic layer. Specifically, the substrate used in the low-reflection layer design of the third embodiment can be any optical lens, any optical element, or any carrier described in this disclosure.
[0150] In the third embodiment, the nanocrystalline particles have a multilayer structure, and the details of each layer of the low-reflection layer in the third embodiment are shown in Table 5A.
[0151]
[0152] Please refer to the above as well. Figure 8 Compared with Table 5B, Figure 8 This is a graph showing the relationship between the reflectivity and wavelength of the surface with the low reflectivity layer in the third embodiment, while Table 5B shows the reflectivity values of the surface with the low reflectivity layer in the third embodiment at wavelengths from 400 nm to 1000 nm.
[0153]
[0154]
[0155]
[0156]
[0157]
[0158] Please refer to Table 5C, which contains the values of R4060, R4070, R5060, R5070, R40100, R70100, R80100, and R90100 for the surface with the reflective layer in the third embodiment.
[0159]
[0160] <Fourth Embodiment>
[0161] The substrate of the fourth embodiment has a low-reflection layer on its surface. The low-reflection layer includes, from the surface of the substrate upwards, a roughening layer, a nanocrystalline particle, and a hydrophobic layer, with the nanocrystalline particle disposed between the roughening layer and the hydrophobic layer. Specifically, the substrate used in the low-reflection layer design of the fourth embodiment can be any optical lens, any optical element, or any carrier described in this disclosure.
[0162] In the fourth embodiment, the nanocrystalline particles have a multilayer structure, and the details of each layer of the low-reflection layer in the fourth embodiment are shown in Table 6A.
[0163]
[0164] Please refer to the above as well. Figure 9 Compared with Table 6B, Figure 9 Table 6B shows the image of the crystalline surface of the fourth embodiment, while Table 6B shows the particle size values of the nanocrystalline particles of the fourth embodiment.
[0165]
[0166] Please refer to the above as well. Figure 10 Compared with Table 6C, Figure 10 This is a graph showing the relationship between the reflectivity and wavelength of the surface with the low-reflectivity layer in the fourth embodiment, while Table 6C shows the reflectivity values of the surface with the low-reflectivity layer in the fourth embodiment at wavelengths from 400 nm to 1000 nm.
[0167]
[0168]
[0169]
[0170]
[0171]
[0172] Please refer to Table 6D, which contains the values of R4060, R4070, R5060, R5070, R40100, R70100, R80100, and R90100 for the surface with the reflective layer in the fourth embodiment.
[0173]
[0174] <Fifth Embodiment>
[0175] Please refer to Figure 11 This is a perspective view illustrating an image-capturing device 100 according to the fifth embodiment of this disclosure. Figure 11As can be seen, the image capturing device 100 in the fifth embodiment is a camera module. The image capturing device 100 includes an optical lens group 101, a driving device group 102, and an electronic image sensor 103. The optical lens group 101 includes the optical lenses and optical elements disclosed herein, and the image capturing device 100 also includes a carrier (not otherwise labeled). The image capturing device 100 uses the optical lens group 101 to focus light and capture an image of the subject, and works with the driving device group 102 to focus the image. Finally, the image is captured on the electronic image sensor 103, and the image data is output.
[0176] The drive unit assembly 102 can be an autofocus module, and its driving method can be a voice coil motor, microelectromechanical system, piezoelectric system, or shape memory metal drive system. The drive unit assembly 102 enables the optical lens assembly 101 to achieve a better imaging position, and can enable clear images of the subject at different object distances.
[0177] The image capturing device 100 may be equipped with a high-sensitivity and low-noise electronic image sensor 103 (such as CMOS or CCD) disposed on the imaging surface of the optical lens group 101, which can truly present the good image quality of the optical lens group 101. In addition, the image capturing device 100 may also include an image stabilization module 104, which may be a kinetic energy sensing element such as an accelerometer, gyroscope or Hall effect sensor. In the fifth embodiment, the image stabilization module 104 is a gyroscope, but it is not limited thereto. By adjusting the changes in different axes of the optical lens group 101 to compensate for the blurry image caused by shaking at the moment of shooting, the image quality of shooting in dynamic and low-light scenes is further improved, and advanced image compensation functions such as optical image stabilization (OIS) and electronic image stabilization (EIS) are provided.
[0178] <Sixth Embodiment>
[0179] Please refer to Figure 12A , Figure 12B and Figure 12C ,in Figure 12A A schematic diagram showing one side of an electronic device 200 according to the sixth embodiment of this disclosure is provided. Figure 12B Drawing according to Figure 12A A schematic diagram of the other side of the electronic device 200. Figure 12C Drawing according to Figure 12A A system schematic diagram of the electronic device 200. (By...) Figure 12A , Figure 12B and Figure 12CAs can be seen, the electronic device 200 in the sixth embodiment is a smartphone. The electronic device 200 includes image capturing devices 100, 110, 120, 130, and 140, a flash module 201, a focus assist module 202, an image signal processor (ISP), a user interface 204, and an image software processor 205, wherein the image capturing devices 120, 130, and 140 are front-facing cameras. When the user takes a picture of the subject 206 using the user interface 204, the electronic device 200 uses the image capturing devices 100, 110, 120, 130, and 140 to capture the light, activates the flash module 201 for supplemental lighting, and uses the subject distance information provided by the focus assist module 202 for fast focusing. In addition, the image signal processor 203 and the image software processor 205 perform image optimization processing to further improve the image quality produced by the image lens. The focus assist module 202 can use an infrared or laser focus assist system to achieve fast focusing, and the user interface 204 can use a touch screen or a physical shooting button, combined with the diverse functions of the image processing software for image shooting and image processing.
[0180] In the sixth embodiment, at least one of the image-capturing devices 100, 110, 120, 130, and 140 may include the optical lens group disclosed herein, and may have the same or similar structure as the image-capturing device 100 in the aforementioned fifth embodiment, which will not be described again here. Specifically, in the sixth embodiment, image-capturing devices 100 and 110 may be a wide-angle image-capturing device and an ultra-wide-angle image-capturing device, or a wide-angle image-capturing device and a telephoto image-capturing device, respectively. Image-capturing devices 120, 130, and 140 may be a wide-angle image-capturing device, an ultra-wide-angle image-capturing device, and a TOF module (Time-Of-Flight); however, this configuration is not limiting. Furthermore, the connection relationships between image-capturing devices 110, 120, 130, and 140 and other components can be... Figure 11 The image capturing device 100 shown in the figure is the same as that shown in the figure, or may be adapted to the type of image capturing device, and will not be shown or described in detail here.
[0181] <Seventh Embodiment>
[0182] Please refer to Figure 13 The diagram illustrates a side view of an electronic device 300 according to a seventh embodiment of the present disclosure. The electronic device 300 of the seventh embodiment is a smartphone, and the electronic device 300 includes image capturing devices 310, 320, and 330 and a flash module 301.
[0183] The electronic device 300 of the seventh embodiment may include the same or similar elements as those in the sixth embodiment, and the connection relationships between the image capturing devices 310, 320, and 330 and other elements may also be the same or similar as those disclosed in the sixth embodiment, which will not be repeated here. The image capturing devices 310, 320, and 330 in the seventh embodiment may all include the optical lens group disclosed herein, and may all have the same or similar structure as the image capturing device 100 in the fifth embodiment, which will not be repeated here. Specifically, the image capturing device 310 may be an ultra-wide-angle image capturing device, the image capturing device 320 may be a wide-angle image capturing device, and the image capturing device 330 may be a telephoto image capturing device (which may include an optical path deflection element), or may be other types of image capturing devices, and is not limited to this configuration.
[0184] <Eighth Embodiment>
[0185] Please refer to Figure 14 The diagram illustrates a side view of an electronic device 400 according to the eighth embodiment of the present disclosure. The electronic device 400 of the eighth embodiment is a smartphone, and the electronic device 400 includes image capturing devices 410, 420, 430, 440, 450, 460, 470, 480, 490 and a flash module 401.
[0186] The electronic device 400 of the eighth embodiment may include the same or similar components as those in the sixth embodiment described above, and the connection relationships between the image capturing devices 410, 420, 430, 440, 450, 460, 470, 480, 490 and the flash module 401 and other components may also be the same or similar as those disclosed in the sixth embodiment, and will not be repeated here. The image capturing devices 410, 420, 430, 440, 450, 460, 470, 480, and 490 in the eighth embodiment may all include the optical lens group disclosed herein, and may all have the same or similar structure as the image capturing device 100 in the fifth embodiment described above, and will not be repeated here.
[0187] In detail, imaging devices 410 and 420 can be ultra-wide-angle imaging devices, imaging devices 430 and 440 can be wide-angle imaging devices, imaging devices 450 and 460 can be telephoto imaging devices, imaging devices 470 and 480 can be telephoto imaging devices (which may include optical path bending elements), and imaging device 490 can be a TOF module, or other types of imaging devices, and is not limited to this configuration.
[0188] <Ninth Embodiment>
[0189] Please refer to Figure 15A as well as Figure 15B ,in Figure 15A A schematic diagram showing one side of an electronic device 500 according to the ninth embodiment of this disclosure is provided. Figure 15B Drawing according to Figure 15A A schematic diagram of the other side of the electronic device 500. (By...) Figure 15A as well as Figure 15B It is understood that the electronic device 500 of the ninth embodiment is a smartphone, and the electronic device 500 includes image capturing devices 510, 520, 530, 540 and user interface 504.
[0190] The electronic device 500 of the ninth embodiment may include the same or similar components as those in the sixth embodiment, and the connection relationships between the image capturing devices 510, 520, 530, 540 and the user interface 504 and other components may also be the same or similar as those disclosed in the sixth embodiment, and will not be repeated here. In detail, the image capturing device 510 may capture an image through a non-circular opening on the outside of the electronic device, and the image capturing devices 520, 530, and 540 may be a telephoto image capturing device, a wide-angle image capturing device, and an ultra-wide-angle image capturing device, respectively, or may be other types of image capturing devices, and are not limited to this configuration.
[0191] Although the present disclosure has been described above with reference to embodiments, it is not intended to limit the present disclosure. Any person skilled in the art may make various modifications and alterations without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be determined by the appended claims.
Claims
1. An optical lens assembly, characterized in that, Include: At least one optical lens; and At least one optical element; The optical lens or optical element has at least one surface with a low-reflection layer, the low-reflection layer comprising a roughening layer, a nanocrystalline particle and a hydrophobic layer, the nanocrystalline particle being disposed between the roughening layer and the hydrophobic layer, and the hydrophobic layer being farther away from the surface of the optical lens or optical element than the nanocrystalline particle. The nanocrystalline particles contain at least SiO2. The average particle size of the nanocrystalline particles is DC, and the surface with the low-reflection layer has a reflectance of R70100 at wavelengths of 700 nm to 1000 nm, which satisfies the following conditions: 200 nm < DC < 1000 nm; and 0% < R70100 ≤ 2.2%。 2. The optical lens assembly as described in claim 1, characterized in that, The hydrophobic layer is selected from at least one polyurethane compound, polyimide compound, organosilane compound, fluoroalkane compound, fluoroalkenyl ether polymer, fluorosilane compound, or fluoroacrylate compound.
3. The optical lens assembly as described in claim 1, characterized in that, The nanocrystalline particle has a multilayer structure and includes at least one high refractive index film layer and at least one low refractive index film layer. The high-refractive-index film layer and the low-refractive-index film layer are stacked alternately, the low-refractive-index film layer is closer to the hydrophobic layer than the high-refractive-index film layer, and the main material of the low-refractive-index film layer is SiO2.
4. The optical lens assembly as described in claim 1, characterized in that, The height of the nanocrystalline particle is Tc, which satisfies the following condition: 200 nm < Tc < 800 nm.
5. The optical lens assembly as described in claim 1, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R40100 at wavelengths of 400 nm to 1000 nm, which satisfies the following conditions: 0% < R40100 ≤ 2.4%。 6. The optical lens assembly as described in claim 5, characterized in that, The surface with this low-reflectivity layer has a reflectivity of R4070 at wavelengths of 400 nm to 700 nm, which satisfies the following conditions: 0% < R4070 ≤ 2.5%。 7. The optical lens assembly as described in claim 6, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R5070 at wavelengths of 500 nm to 700 nm, which satisfies the following conditions: 0% < R5070 ≤ 2.4%。 8. The optical lens assembly as described in claim 6, characterized in that, The surface with this low-reflectivity layer has a reflectivity of R4060 at wavelengths of 400 nm to 600 nm, which satisfies the following conditions: 0% < R4060 ≤ 2.5%。 9. The optical lens assembly as described in claim 6, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R5060 at wavelengths of 500 nm - 600 nm, which satisfies the following conditions: 0% < R5060 ≤ 2.4%。 10. The optical lens assembly as described in claim 5, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R70100 at wavelengths of 700 nm - 1000 nm, which satisfies the following conditions: 0% < R70100 ≤ 2%。 11. An image capturing device, characterized in that, Include: An optical lens assembly; and At least one carrier; The optical lens assembly or the carrier has at least one surface with a low-reflection layer, the low-reflection layer comprising a roughening layer, a nanocrystalline particle and a hydrophobic layer, the nanocrystalline particle being disposed between the roughening layer and the hydrophobic layer, and the hydrophobic layer being farther away from the surface of the optical lens assembly or the carrier than the nanocrystalline particle. The nanocrystalline particles contain at least SiO2. The average particle size of the nanocrystalline particles is DC, and the surface with the low-reflection layer has a reflectance of R70100 at wavelengths of 700 nm to 1000 nm, which satisfies the following conditions: 200 nm < DC; and 0% < R70100 ≤ 2.2%。 12. The imaging device as described in claim 11, characterized in that, The hydrophobic layer is selected from at least one polyurethane compound, polyimide compound, organosilane compound, fluoroalkane compound, fluoroalkenyl ether polymer, fluorosilane compound, or fluoroacrylate compound.
13. The imaging device as described in claim 11, characterized in that, The nanocrystalline particle has a multilayer structure and includes at least one high refractive index film layer and at least one low refractive index film layer. The high-refractive-index film layer and the low-refractive-index film layer are stacked alternately, the low-refractive-index film layer is closer to the hydrophobic layer than the high-refractive-index film layer, and the main material of the low-refractive-index film layer is SiO2.
14. The imaging device as described in claim 11, characterized in that, The height of the nanocrystalline particle is Tc, which satisfies the following condition: 200 nm < Tc < 800 nm.
15. The imaging device as described in claim 11, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R40100 at wavelengths of 400 nm to 1000 nm, which satisfies the following conditions: 0% < R40100 ≤ 2.4%。 16. The imaging device as described in claim 15, characterized in that, The surface with this low-reflectivity layer has a reflectivity of R4070 at wavelengths of 400 nm to 700 nm, which satisfies the following conditions: 0% < R4070 ≤ 2.5%。 17. The imaging device as described in claim 16, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R5070 at wavelengths of 500 nm to 700 nm, which satisfies the following conditions: 0% < R5070 ≤ 2.4%。 18. The imaging device as described in claim 16, characterized in that, The surface with this low-reflectivity layer has a reflectivity of R4060 at wavelengths of 400 nm to 600 nm, which satisfies the following conditions: 0% < R4060 ≤ 2.5%。 19. The imaging device as claimed in claim 16, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R5060 at wavelengths of 500 nm - 600 nm, which satisfies the following conditions: 0% < R5060 ≤ 2.4%。 20. The imaging device as described in claim 15, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R70100 at wavelengths of 700 nm - 1000 nm, which satisfies the following conditions: 0% < R70100 ≤ 2%。 21. An electronic device, characterized in that, Include: The imaging device as described in claim 11.
22. A low-reflection layer, characterized in that, Include: A rough layer, a nanocrystalline particle, and a hydrophobic layer, wherein the nanocrystalline particle is disposed between the rough layer and the hydrophobic layer; The nanocrystalline particles contain at least SiO2. The average particle size of the nanocrystalline particles is DC, the reflectance of one surface with the low-reflection layer is R40100 at wavelengths of 400 nm - 1000 nm, and the reflectance of the same surface with the low-reflection layer is R70100 at wavelengths of 700 nm - 1000 nm, satisfying the following conditions: 200 nm < DC < 1000 nm; 0% < R40100 ≤ 2.4%; and 0% < R70100 ≤ 2.2%。 23. The low-reflection layer as claimed in claim 22, characterized in that, The hydrophobic layer is selected from at least one polyurethane compound, polyimide compound, organosilane compound, fluoroalkane compound, fluoroalkenyl ether polymer, fluorosilane compound, or fluoroacrylate compound.
24. The low-reflection layer as claimed in claim 22, characterized in that, The nanocrystalline particle has a multilayer structure and includes at least one high refractive index film layer and at least one low refractive index film layer. The high-refractive-index film layer and the low-refractive-index film layer are stacked alternately, the low-refractive-index film layer is closer to the hydrophobic layer than the high-refractive-index film layer, and the main material of the low-refractive-index film layer is SiO2.
25. The low-reflection layer as claimed in claim 22, characterized in that, The height of the nanocrystalline particle is Tc, which satisfies the following condition: 200 nm < Tc < 800 nm.
26. The low-reflection layer as claimed in claim 22, characterized in that, The surface with this low-reflectivity layer has a reflectivity of R4070 at wavelengths of 400 nm to 700 nm, which satisfies the following conditions: 0% < R4070 ≤ 2.5%。 27. The low-reflection layer as claimed in claim 22, characterized in that, The surface with the low-reflectivity layer has a reflectivity of R70100 at wavelengths of 700 nm - 1000 nm, which satisfies the following conditions: 0% < R70100 ≤ 2%。
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