Method of manufacturing a microbolometer

Abstract

A method of manufacturing a microbolometer includes the following steps. A substrate having a first region and a second region is provided. A first patterned metal layer is formed on the substrate. The first patterned metal layer includes a first reflective layer in the first region and a second reflective layer in the second region. A sacrificial layer is formed on the first region. A second patterned metal layer is formed on part of the sacrificial layer and part of the first patterned metal layer. An insulating layer is formed on the substrate. A patterned thermally sensitive material layer is formed on the insulating layer, the patterned thermally sensitive material layer including a first thermally sensitive layer in the first region and a second thermally sensitive layer in the second region. The first thermally sensitive layer corresponds to the first reflective layer, and the second thermally sensitive layer corresponds to the second reflective layer. The sacrificial layer in the first region is removed to form a cavity.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a thermal sensor, and more particularly to a method for manufacturing a micro-radiation thermal meter. Background Technology

[0002] Thermal sensor arrays, such as micro-bolometer arrays, include standard pixels and reference pixels. Standard pixels sense the target's thermal, material, and electrical responses, while reference pixels are essentially unresponsive to target radiation, primarily sensing material and electrical responses to serve as a reference for the standard pixels. This allows for temperature compensation, correcting the thermal sensor array's sensing results. Generally, reference pixels are formed by adding a shielding structure above some standard pixels during the standard pixel fabrication process, which may limit the overall package size. Alternatively, reference pixels and standard pixels can be manufactured separately, then placed and packaged on a substrate, potentially limiting the overall package integration density. Summary of the Invention

[0003] This invention provides a method for manufacturing a micro-radiative thermal meter, which can simultaneously manufacture pixel units and reference pixels under the same process, and improve the integration density of the micro-radiative thermal meter.

[0004] A method for manufacturing a micro-radiative thermal meter according to an embodiment of the present invention includes the following steps: A substrate is provided, wherein the substrate has a first region and a second region. A first patterned metal layer is formed on the substrate. The first patterned metal layer includes a first reflective layer located in the first region and a second reflective layer located in the second region. A sacrificial layer is formed on the first region. A second patterned metal layer is formed on a portion of the sacrificial layer and a portion of the first patterned metal layer. An insulating layer is formed on the substrate to cover the first patterned metal layer, the second patterned metal layer, and the sacrificial layer. A patterned thermistor layer is formed on the insulating layer, wherein the patterned thermistor layer includes a first thermistor layer located in the first region and a second thermistor layer located in the second region. The first thermistor layer corresponds to the first reflective layer, and the second thermistor layer corresponds to the second reflective layer. The sacrificial layer located in the first region is removed to form a cavity.

[0005] In one embodiment of the present invention, during the process of forming the sacrificial layer on the first region, the sacrificial layer is also formed on the second region to cover the first patterned metal layer.

[0006] In one embodiment of the present invention, the manufacturing method further includes forming trenches in the sacrificial layer before forming the insulating layer on the substrate to expose a portion of the substrate surface. In the step of forming the insulating layer on the substrate, the insulating layer also fills the trenches to isolate the sacrificial layer located in the first region from the sacrificial layer located in the second region.

[0007] In one embodiment of the present invention, the first patterned metal layer further includes a pair of first conductive electrodes and a pair of second conductive electrodes. The pair of first conductive electrodes is located in a first region, wherein a first reflective layer is located between the pair of first conductive electrodes. The pair of second conductive electrodes is located in a second region, wherein a second reflective layer is located between the pair of second conductive electrodes. The step of forming a second patterned metal layer on a portion of the sacrificial layer and a portion of the first patterned metal layer includes forming a plurality of first openings in the sacrificial layer to expose a portion of the pair of first conductive electrodes and a portion of the pair of second conductive electrodes; and forming a second patterned metal layer on the sacrificial layer and in the plurality of first openings.

[0008] In one embodiment of the invention, during the process of forming the sacrificial layer on the first region, the sacrificial layer is also formed on the second region to cover a portion of the first patterned metal layer, wherein the sacrificial layer has a second opening to expose the second reflective layer.

[0009] In one embodiment of the present invention, in the step of forming an insulating layer on the substrate, the insulating layer further fills a second opening to cover the second reflective layer.

[0010] In one embodiment of the present invention, the first patterned metal layer further includes a pair of first conductive electrodes and a pair of second conductive electrodes. The pair of first conductive electrodes is located in a first region, wherein a first reflective layer is located between the pair of first conductive electrodes. The pair of second conductive electrodes is located in a second region, wherein a second reflective layer is located between the pair of second conductive electrodes. The step of forming a second patterned metal layer on a portion of the sacrificial layer and a portion of the first patterned metal layer includes forming a plurality of first openings in the sacrificial layer in the first region to expose a portion of the pair of first conductive electrodes, and forming a second patterned metal layer on the sacrificial layer in the first region and in the plurality of first openings, as well as on the pair of second conductive electrodes and a portion of the substrate in the second region.

[0011] In one embodiment of the present invention, the step of forming a patterned thermosensitive material layer on an insulating layer includes forming an opening in the insulating layer to expose a portion of a sacrificial layer corresponding to the first reflective layer or the second reflective layer, and forming a patterned thermosensitive material layer in the opening of the insulating layer.

[0012] In one embodiment of the present invention, the method further includes forming a protective layer on a patterned thermosensitive material layer.

[0013] In one embodiment of the present invention, the method further includes forming a substrate insulating layer on the substrate before forming a first patterned metal layer on the substrate.

[0014] A method for manufacturing a micro-radiative thermal meter according to another embodiment of the present invention includes the following steps: Providing a substrate having a first region and a second region. Forming a substrate insulating layer on the substrate. Forming a first patterned metal layer on the substrate, wherein the first patterned metal layer includes a first reflective layer located in the first region and a second reflective layer located in the second region. Forming a sacrificial layer on the substrate to cover the surfaces of the first and second regions. Forming a second patterned metal layer on a portion of the sacrificial layer and a portion of the first patterned metal layer. Forming an insulating layer on the substrate to cover the first patterned metal layer, the second patterned metal layer, and the sacrificial layer. Forming a patterned thermistor layer on the insulating layer, wherein the patterned thermistor layer includes a first thermistor layer located in the first region and a second thermistor layer located in the second region, the first thermistor layer corresponding to the first reflective layer and the second thermistor layer corresponding to the second reflective layer. Removing the sacrificial layer located in the first region to form a cavity, and retaining the sacrificial layer in the second region to form a spacer.

[0015] In one embodiment of the present invention, the aforementioned partition is located between the second reflective layer and the insulating layer, and is in direct contact with the second reflective layer.

[0016] In one embodiment of the present invention, the aforementioned partition layer is in direct contact with the second thermosensitive layer.

[0017] In one embodiment of the invention, the method further includes forming trenches in the sacrificial layer before forming the insulating layer on the substrate to expose a portion of the substrate surface. In the step of forming the insulating layer on the substrate, the insulating layer also fills the trenches to form an isolation structure that isolates the sacrificial layer located in the first region from the sacrificial layer located in the second region.

[0018] A method for manufacturing a micro-radiative thermal meter according to another embodiment of the present invention includes the following steps: Providing a substrate having a first region and a second region. Forming a substrate insulating layer on the substrate. Forming a first patterned metal layer on the substrate, wherein the first patterned metal layer includes a first reflective layer located in the first region and a second reflective layer located in the second region. Forming a sacrificial layer on the first region of the substrate. Forming a second patterned metal layer on a portion of the sacrificial layer and a portion of the first patterned metal layer. Forming an insulating layer on the substrate to cover the first patterned metal layer, the second patterned metal layer, and the sacrificial layer, wherein the insulating layer includes a first insulating layer located in the first region and a second insulating layer located in the second region. A second reflective layer is in direct contact with the second insulating layer. Forming a patterned thermistor material layer on the insulating layer, wherein the patterned thermistor material layer includes a first thermistor layer located in the first region and a second thermistor layer located in the second region, the first thermistor layer corresponding to the first reflective layer and the second thermistor layer corresponding to the second reflective layer. Removing the sacrificial layer to form a cavity in the first region.

[0019] In one embodiment of the present invention, the first patterned metal layer further includes a pair of second conductive electrodes disposed on a second region of the substrate, and the second reflective layer is located between the pair of second conductive electrodes.

[0020] In one embodiment of the present invention, the aforementioned portion of the second patterned metal layer covers the top and sidewalls of a pair of second conductive electrodes.

[0021] In one embodiment of the invention, during the process of forming the sacrificial layer on the first region, the sacrificial layer is also formed on the second region to cover a pair of second conductive electrodes, wherein the sacrificial layer has a second opening to expose the second reflective layer.

[0022] In one embodiment of the present invention, during the process of removing the sacrificial layer, a portion of the sacrificial layer located in the second region is removed to form a cavity in the second region, wherein the cavity in the first region is connected to the cavity in the second region.

[0023] In one embodiment of the invention, during the removal of the sacrificial layer, another portion of the sacrificial layer located in the second region is retained to form a spacer, the spacer portion covering a pair of second wire electrodes.

[0024] Based on the above, the micro-radiative thermal measurement meter of the present invention includes multiple pixel units and at least one reference pixel, which can be formed in the same manufacturing process to simplify the manufacturing process and help improve its integration density. Attached Figure Description

[0025] Figure 1 This is a top view schematic diagram of a micro-radiative thermal measurement meter according to an embodiment of the present invention;

[0026] Figure 2 This is a cross-sectional schematic diagram of a micro-radiative thermal measurement meter according to an embodiment of the present invention;

[0027] Figures 3A to 3F This is a cross-sectional schematic diagram of the manufacturing process of a micro-radiative thermal meter according to an embodiment of the present invention;

[0028] Figures 4A to 4B This is a cross-sectional schematic diagram of the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention;

[0029] Figures 5A to 5C This is a cross-sectional schematic diagram of the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention;

[0030] Figure 6 This is a cross-sectional schematic diagram of a micro-radiative thermal measurement device according to another embodiment of the present invention;

[0031] Figures 7A to 7DThis is a cross-sectional schematic diagram of the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention;

[0032] Figure 8 This is a cross-sectional schematic diagram of a micro-radiative thermal measurement device according to another embodiment of the present invention;

[0033] Figures 9A to 9D This is a cross-sectional schematic diagram of the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention;

[0034] Figure 10 This is a top view schematic diagram of a microradiative thermal meter according to another embodiment of the present invention;

[0035] Figure 11 This is a cross-sectional schematic diagram of a microradiative thermal meter according to another embodiment of the present invention.

[0036] Explanation of icon numbers

[0037] 10a, 10b, 10c, 20, 30, 40: Micro-radiation thermal meter

[0038] 100:Substrate

[0039] 101: Substrate insulating layer

[0040] 110: First patterned metal layer

[0041] 112a: First reflective layer

[0042] 112b: Second reflective layer

[0043] 114a, 116a: First wire electrode

[0044] 114b, 116b: Second wire electrode

[0045] 120: Sacrifice Layer

[0046] 130: Second patterned metal layer

[0047] 130a: First connecting line

[0048] 130b: Second connection line

[0049] 132a: First metal electrode

[0050] 132b: Second metal electrode

[0051] 134a: Pixel connection electrode

[0052] 134b: Reference pixel connection electrode

[0053] 140: Insulation layer

[0054] 140a: First insulating layer

[0055] 140b: Second insulating layer

[0056] 140W, 160W: Sidewall

[0057] 142: Isolation Structure

[0058] 150: Patterned thermal material layer

[0059] 150a: First thermal layer

[0060] 150b: Second thermal layer

[0061] 160: Protective layer

[0062] C,C': Cavity

[0063] OP1: First opening

[0064] OP2: Opening

[0065] OP3, OP3': Opening

[0066] OP4: Second opening

[0067] PX1: Pixel unit

[0068] PX2: Reference pixel

[0069] R1: Zone 1

[0070] R2: Second Zone

[0071] S: partition

[0072] T: Trench Detailed Implementation

[0073] Figure 1 This is a top view schematic diagram of the pixels and reference pixel array of a micro-radiative thermal meter according to an embodiment of the present invention. Figure 2 This is a cross-sectional schematic diagram of the pixels and reference pixel array of a micro-radiative thermal meter according to an embodiment of the present invention. Figure 2 It can be along Figure 1 A sectional view along section line A-A'. For clarity, Figure 1 Some components are omitted from the diagram; please refer to the reference section for the omitted parts. Figure 2 To understand.

[0074] Please refer to Figure 1 and Figure 2The micro-radiative thermal meter 10a includes a substrate 100, a plurality of pixel units PX1, at least one reference pixel PX2, and a protective layer 160. The plurality of pixel units PX1 are arrayed on the substrate 100. Each of the plurality of pixel units PX1 includes a first reflective layer 112a, a first thermistor layer 150a, and a first insulating layer 140a. The first reflective layer 112a is disposed above the substrate 100. The first insulating layer 140a is disposed above the first reflective layer 112a, and a cavity C is formed between the first insulating layer 140a and the first reflective layer 112a, forming a micro-bridge structure. The first thermistor layer 150a is disposed on the first insulating layer 140a. The reference pixel PX2 is disposed on the substrate 100 and located on at least one side of the plurality of pixel units PX1. Each reference pixel PX2 includes a second reflective layer 112b, a second thermistor layer 150b, and a second insulating layer 140b. The second reflective layer 112b is disposed above the substrate 100. The second thermally sensitive layer 150b is disposed above the second reflective layer 112b. The second insulating layer 140b is disposed between the second reflective layer 112b and the second thermally sensitive layer 150b. The protective layer 160 covers the plurality of pixel units PX1 and the reference pixel PX2. The first insulating layer 140a of the plurality of pixel units PX1 and the second insulating layer 140b of the reference pixel PX2 are separated from each other to avoid affecting the thermal response characteristics of the pixel units PX1 and the reference pixel PX2.

[0075] In this embodiment, the reference pixel PX2 further includes a spacer S disposed between the second insulating layer 140b and the second reflective layer 112b. That is, there is no cavity between the second insulating layer 140b and the second reflective layer 112b in the reference pixel PX2. The spacer S can absorb radiant heat to reduce the thermal response of the second thermistor layer 150b. In some embodiments, the material of the spacer S can be silicon oxide, silicon nitride, polyamide, or a combination of the above materials or other suitable filler materials.

[0076] The substrate 100 may be a silicon substrate or other suitable substrate, and the present invention is not limited thereto. In some embodiments, the substrate 100 may include driving elements and circuits formed therein.

[0077] In some embodiments, a substrate insulating layer 101 is formed between the substrate 100 and the first reflective layer 112a and between the substrate 100 and the second reflective layer 112b, and the material of the insulating layer 101 is, for example, silicon dioxide.

[0078] In some embodiments, the micro-radiative thermal meter 10a further includes an isolation structure 142 disposed between adjacent pixel units PX1 and reference pixel PX2 to separate the separator S of reference pixel PX2 from pixel unit PX1. In some embodiments, the isolation structure 142 is separated from the first insulating layer 140a and the second insulating layer 140b.

[0079] In some embodiments, the first insulating layer 140a of each pixel unit PX1 is independent of each other, that is, the first insulating layer 140a of different pixel units PX1 is not connected to each other.

[0080] In some embodiments, the second insulating layer 140b of each reference pixel PX2 is independent of each other, that is, the second insulating layer 140b of different reference pixels PX2 is not connected to each other. However, the present invention is not limited thereto, and in other embodiments, the second insulating layer 140b of adjacent reference pixels PX2 may be connected.

[0081] In some embodiments, the isolation structure 142 surrounds the reference pixel PX2 so that the partition S is located only in the area surrounded by the isolation structure 142. Figure 1 Although a single isolation structure 142 is shown surrounding two reference pixels PX2, it is not intended to limit the invention. The single isolation structure 142 may surround one or more reference pixels PX2, and may be adjusted according to actual needs.

[0082] In some embodiments, a portion of the protective layer 160 may be disposed on the isolation structure 142. In some embodiments, the protective layers 160 of pixel unit PX1 and reference pixel PX2 are independent of each other and not connected. However, the arrangement of the protective layer 160 can be adjusted according to actual needs, and the present invention is not limited thereto. For example, in other embodiments, the protective layer 160 may be conformally disposed on the surfaces of pixel unit PX1 and reference pixel PX2.

[0083] In some embodiments, the cavity C of the pixel unit PX1 is formed by the space between the first insulating layer 140a and the substrate 100 or the first reflective layer 112a.

[0084] In some embodiments, the cavities C of adjacent pixel units PX1 may be connected.

[0085] In pixel unit PX1, the first reflective layer 112a and the first thermal layer 150a are correspondingly disposed, that is, the first thermal layer 150a overlaps with the first reflective layer 112a in the normal direction of the substrate 100. In reference pixel PX2, the second reflective layer 112b and the second thermal layer 150b are correspondingly disposed, that is, the second thermal layer 150b overlaps with the second reflective layer 112b in the normal direction of the substrate 100.

[0086] In some embodiments, each of the plurality of pixel units PX1 further includes first conductive electrodes 114a and 116a and a first connecting line 130a. The first conductive electrodes 114a and 116a are disposed on the substrate 100, and a first reflective layer 112a is disposed between the first conductive electrodes 114a and 116a. The first connecting line 130a connects the first conductive electrodes 114a and 116a and the first thermal layer 150a. For example, the first connecting line 130a may include a first metal electrode 132a and a pixel connecting electrode 134a. The first metal electrode 132a is disposed on the first conductive electrodes 114a and 116a and does not contact the substrate 100, so as to be electrically connected to the first conductive electrode 114a and form a cavity C with the substrate 100. The pixel connecting electrode 134a connects the first metal electrode 132a and the first thermal layer 150a. The first metal electrode 132a essentially provides an electrical connection in the vertical direction between the first conductive electrodes 114a and 116a and the first thermistor layer 150a, and the pixel connection electrode 134a essentially provides an electrical connection in the horizontal direction between the first conductive electrodes 114a and 116a and the first thermistor layer 150a. In some embodiments, viewed from above, the pixel connection electrode 134a has a serpentine or S-shaped pattern, but the invention is not limited thereto.

[0087] In some embodiments, the first thermal layer 150a extends through the first insulating layer 140a to be electrically connected to the pixel connection electrode 134a, but the present invention is not limited thereto.

[0088] In some embodiments, the material of the first thermistor layer 150a is different from the material of the first connection line 130a. For example, the material of the first connection line 130a may include titanium, germanium, or a combination of the above materials, alloys, or other suitable conductive materials, and the material of the first thermistor layer 150a may include vanadium oxide (VOx), silicon germanium (SiGe), amorphous silicon (α-Si), or other suitable thermistor materials, but the present invention is not limited thereto.

[0089] In some embodiments, the reference pixel PX2 further includes second conductive electrodes 114b and 116b and a second connection line 130b. The second conductive electrodes 114b and 116b are disposed on the substrate 100, and a second reflective layer 112b is located between the second conductive electrodes 114b and 116b. The second connection line 130b connects the second conductive electrodes 114b and 116b to the second thermal layer 150b. For example, the second connection line 130b may include a second metal electrode 132b and a reference pixel connection electrode 134b. The second metal electrode 132b is disposed on the second conductive electrodes 114b and 116b and penetrates the separator S to be electrically connected to the second conductive electrodes 114b and 116b. The reference pixel connection electrode 134b connects the second metal electrode 132b and the second thermal layer 150b. The second metal electrode 132b essentially provides an electrical connection in the vertical direction between the second conductive electrodes 114b and 116b and the second thermistor layer 150b, and the reference pixel connection electrode 134b essentially provides an electrical connection in the horizontal direction between the second conductive electrodes 114b and 116b and the second thermistor layer 150b. In some embodiments, viewed from above, the reference pixel connection electrode 134b has a serpentine or S-shaped pattern, but the invention is not limited thereto. In some embodiments, the second thermistor layer 150b extends through the second insulating layer 140b to be electrically connected to the reference pixel connection electrode 134b, but the invention is not limited thereto.

[0090] In some embodiments, the material of the second thermistor layer 150b is different from the material of the second connection line 130b. For example, the material of the second connection line 130b may include titanium, germanium, or a combination of the above materials, alloys, or other suitable conductive materials, and the material of the second thermistor layer 150b may include vanadium oxide (VOx), silicon germanium (SiGe), amorphous silicon (α-Si), or other suitable thermistor materials, but the present invention is not limited thereto.

[0091] Figure 1 The diagram schematically shows 6 pixel units PX1 and 4 reference pixels PX2, but it is not intended to limit the invention. The number and arrangement of pixel units PX1 and reference pixels PX2 can be adjusted according to actual needs.

[0092] Figures 3A to 3F This is a cross-sectional schematic diagram illustrating the manufacturing process of a micro-radiative thermal meter according to an embodiment of the present invention. It must be noted that... Figures 3A to 3F The embodiments follow Figure 2 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0093] Please refer to Figure 3AA substrate 100 is provided, wherein the substrate 100 has a first region R1 and a second region R2. The first region R1 is, for example, an active region or an imaging region, on which pixel units are formed; the second region R2 is, for example, a peripheral region, on which reference pixels are formed. In some embodiments, a substrate insulating layer 101 may be formed on the surface of the substrate 100.

[0094] Please continue to refer to Figure 3A A first patterned metal layer 110 is formed above the substrate 100. For example, a first metal material layer (not shown) can be formed first on the substrate insulating layer 101, and then the first metal material layer can be patterned, for example, by performing a photolithography process on the first metal material layer using a photomask as a mask, to obtain the first patterned metal layer 110. The first patterned metal layer 110 includes a first reflective layer 112a and first conductive electrodes 114a and 116a located in the first region R1, and a second reflective layer 112b and second conductive electrodes 114b and 116b located in the second region R2. In some embodiments, the material of the first patterned metal layer 110 may include gold, aluminum, titanium, or alloys of the above materials or other suitable metallic materials, and the present invention is not limited thereto.

[0095] Please refer to Figure 3B A sacrificial layer 120 is formed on the substrate 100 to cover the surfaces of the first region R1 and the second region R2. The material of the sacrificial layer 120 may be, for example, silicon oxide, silicon nitride, polyamide, or a combination of the above materials or other suitable materials.

[0096] Then, a trench T may be formed in the sacrificial layer 120 to expose the substrate 100. In some embodiments, the trench T is formed between the first region R1 and the second region R2 to separate the first region R1 and the second region R2. In some embodiments, the trench T is disposed around the second region R2 to isolate the second region R2.

[0097] In some embodiments, a plurality of first openings OP1 may be formed in the sacrificial layer 120 to expose portions of the first wire electrodes 114a, 116a and the second wire electrodes 114b, 116b.

[0098] The first opening OP1 and the trench T can be formed by a photolithography process, and the first opening OP1 and the trench T can be formed in the same process step, but the present invention is not limited thereto.

[0099] Please refer to Figure 3CA second patterned metal layer 130 is formed on a portion of the sacrificial layer 120 and a portion of the first patterned metal layer 110. The method for forming the second patterned metal layer 130 can be similar to the method for forming the first patterned metal layer 110. The second patterned metal layer 130 may include a first connection line 130a located in the first region R1 and a second connection line 130b located in the second region R2. In some embodiments, the material of the second patterned metal layer 130 may include titanium, germanium, or a combination of the above materials, alloys, or other suitable metallic materials, and the present invention is not limited thereto.

[0100] In some embodiments, the first connection line 130a includes a first metal electrode 132a and a pixel connection electrode 134a. The first metal electrode 132a is formed in a first opening OP1 in the first region R1 to be electrically connected to the first conductor electrodes 114a and 116a. The pixel connection electrode 134a is formed on the sacrificial layer 120 of the first region R1 and is electrically connected to the first metal electrode 132a. In some embodiments, the second connection line 130b includes a second metal electrode 132b and a reference pixel connection electrode 134b. The second metal electrode 132b is formed in a first opening OP1 in the second region R2 to be electrically connected to the second conductor electrodes 114b and 116b. The pixel connection electrode 134b is formed on the sacrificial layer 120 of the second region R2 and is electrically connected to the second metal electrode 132b.

[0101] Please refer to Figure 3D An insulating layer 140 is conformally formed on the substrate 100 to cover the first patterned metal layer 110, the second patterned metal layer 130, and the sacrificial layer 120. The insulating layer 140 can be divided into a first insulating layer 140a formed in the first region R1 and a second insulating layer 140b formed in the second region R2. In some embodiments, the insulating layer 140 is further filled with trenches T to isolate the sacrificial layer 120 located in the first region R1 from the sacrificial layer 120 located in the second region R2. The insulating layer 140 filled with trenches T is also referred to as an isolation structure 142. In other words, the isolation structure 142 is composed of the insulating layer 140.

[0102] In some embodiments, the insulating layer 140 may be patterned to form a plurality of openings OP2 in the insulating layer 140 to expose a portion of the pixel connection electrode 134a or the reference pixel connection electrode 134b.

[0103] In some embodiments, the material of the insulating layer 140 may include polycrystalline silicon nitride, silicon oxide, silicon nitride or other suitable insulating materials, and the present invention is not limited thereto.

[0104] Please refer to Figure 3EA patterned thermally sensitive material layer 150 is formed on the insulating layer 140. The patterned thermally sensitive material layer 150 includes a first thermally sensitive layer 150a located in a first region R1 and a second thermally sensitive layer 150b located in a second region R2. The first thermally sensitive layer 150a corresponds to the first reflective layer 112a, and the second thermally sensitive layer 150b corresponds to the second reflective layer 112b. Specifically, the first thermally sensitive layer 150a is formed on the first insulating layer 140a corresponding to the first reflective layer 112a and extends into the opening OP2 to connect the first thermally sensitive layer 150a to the pixel connection electrode 134a. The second thermally sensitive layer 150b is formed on the second insulating layer 140b corresponding to the second reflective layer 112b and extends into the opening OP2 to connect the second thermally sensitive layer 150b to the reference pixel connection electrode 134b. The method of forming the patterned thermally sensitive material layer 150 can be similar to the method of forming the first patterned metal layer 110.

[0105] In some embodiments, the material of the patterned thermistor layer 150 may include vanadium oxide (VOx), silicon germanium (SiGe), amorphous silicon (α-Si), or other suitable thermistor materials, and the present invention is not limited thereto.

[0106] Please refer to Figure 3F The sacrificial layer 120 located in the first region R1 is removed to form a cavity C. For example, the insulating layer 140 can be patterned to form an opening OP3 through the first insulating layer 140a to expose the sacrificial layer 120. Then, the sacrificial layer 120 is wet-etched through the opening OP3 to form a cavity C in the first region R1. The etching solution used for wet etching can be, for example, hydrofluoric acid, but the invention is not limited thereto, as long as the etching solution can selectively etch the sacrificial layer 120. Since the isolation structure 142 separates the sacrificial layer 120 located in the first region R1 from the sacrificial layer 120 located in the second region R2, the etching solution does not flow into the second region R2. Only the sacrificial layer 120 in the first region R1 is removed, while the sacrificial layer 120 remaining in the second region R2 is also referred to as the spacer layer S. In some embodiments, the opening OP3 separates the first insulating layer 140a from the isolation structure 142. In some embodiments, during the patterning of the insulating layer 140, an opening OP3' penetrating the second insulating layer 140b is also formed. The opening OP3' exposes the spacer S and separates the second insulating layer 140b from the isolation structure 142. That is, after the insulating layer 140 is patterned, the first insulating layer 140a, the second insulating layer 140b, and the isolation structure 142 can be separated from each other. The first insulating layer 140a, the second insulating layer 140b, and the isolation structure 142 are all composed of the insulating layer 140 but are independent and do not contact each other. In other embodiments, during the patterning of the insulating layer 140, the opening OP3' may not be formed, meaning that the second insulating layer 140b and the isolation structure 142 can be connected.

[0107] In some embodiments, during the patterning of the insulating layer 140, the first insulating layer 140a may be patterned to form a pattern that overlaps with the first connection line 130a and the first thermal layer 150a. In other words, from a top view, the outline of the first insulating layer 140a is consistent with... Figure 1 The outlines of the patterns formed by the connection of the first connecting line 130a and the first thermal layer 150a shown are similar. Therefore, in Figure 3F In the middle, along Figure 1 There is a gap g between the portion of the first insulating layer 140a that overlaps with the first thermal layer 150a and the portion of the first insulating layer 140a that overlaps with the first connecting line 130a.

[0108] Similarly, in some embodiments, during the patterning of the insulating layer 140, the second insulating layer 140b can be patterned to form a pattern that overlaps with the second connection line 130b and the second thermal layer 150b. In other words, from a top view, the outline of the second insulating layer 140b is similar to... Figure 1 The outlines of the patterns formed by the connection of the second connecting line 130b and the second thermal layer 150b shown are similar. Therefore, in Figure 3F In the middle, along Figure 1 The cross-section A-A' shows a gap g' between the portion of the second insulating layer 140b that overlaps with the second thermal layer 150b and another portion of the second insulating layer 140b that overlaps with the second connecting line 130b. However, the invention is not limited thereto; in other embodiments, the second insulating layer 140b may cover... Figure 3F The gap g' is left unpatterned. In this way, from a top view, the second insulating layer 140b can completely cover the second connecting line 130b and the sacrificial layer 120 (or spacer S) exposed between the second connecting lines 130b.

[0109] In some embodiments, opening OP3 and opening OP2 can be performed in the same process step, but the present invention is not limited thereto.

[0110] Then please refer to Figure 2 A protective layer 160 is formed on the patterned thermistor layer 150. For example, the protective layer 160 can be deposited on the surfaces of the first insulating layer 140a, the isolation structure 142, and the second insulating layer 140b, and cover the patterned thermistor layer 150. The material of the protective layer 160 can be polysilicon oxide, silicon oxide, silicon nitride, or other suitable insulating materials. In this embodiment, the protective layer 160 is formed after the sacrificial layer 120 of the first region R1 is removed, but the invention is not limited thereto, and the protective layer 160 can also be formed before the sacrificial layer 120 of the first region R1 is removed. Figure 2The location of the protective layer 160 is schematically shown, but it is not intended to limit the invention. The protective layer 160 may cover the surfaces of the first region R1 and the second region R2 completely or partially as needed, and may selectively fill the openings OP3, OP3', gap g or gap g'.

[0111] In some embodiments, the material of the protective layer 160 may be the same as the material of the insulating layer 140, but the invention is not limited thereto. In other embodiments, the material of the protective layer 160 may be different from the material of the insulating layer 140.

[0112] After the above process, the fabrication of the micro-radiation thermal measuring instrument 10a can be roughly completed.

[0113] Figures 4A to 4B This is a cross-sectional schematic diagram illustrating the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention. It must be noted here that... Figures 4A to 4B The embodiments follow Figure 2 , Figures 3A to 3F The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here. Figures 4A to 4B Can be continued Figure 3E A cross-sectional schematic diagram of the manufacturing process of a microradiative thermal meter. (About...) Figures 3A to 3E The steps are explained in the foregoing embodiments and will not be repeated here.

[0114] Please refer to Figure 4A A protective layer 160 is formed on the patterned thermal material layer 150, so that the protective layer 160 conformally covers the surfaces of the first region R1 and the second region R2.

[0115] Please refer to Figure 4B The insulating layer 140 and the protective layer 160 are patterned to form an opening OP3 in the first region R1 to expose the sacrificial layer 120. The opening OP3 penetrates the first insulating layer 140a and the protective layer 160 to separate the first insulating layer 140a from the isolation structure 142 and to separate the protective layer 160 located in the first region R1 from the protective layer 160 located on the isolation structure 142.

[0116] In some embodiments, during the patterning of the insulating layer 140 and the protective layer 160, an opening is also formed through the second insulating layer 140b and the protective layer 160, exposing the sacrificial layer 120 and separating the second insulating layer 140b from the isolation structure 142. However, in other embodiments, during the patterning of the insulating layer 140 and the protective layer 160, the opening through the second insulating layer 140b and the protective layer 160 may not be formed.

[0117] Please continue to refer to Figure 4B Then, through the opening OP3, the sacrificial layer 120 in the first region R1 is wet-etched, forming a cavity C in the first region R1. Since the isolation structure 142 separates the sacrificial layer 120 in the first region R1 from the sacrificial layer 120 in the second region R2, the etching solution will not flow into the second region R2. Only the sacrificial layer 120 in the first region R1 is removed, while the sacrificial layer 120 remaining in the second region R2 is also called the spacer layer S.

[0118] After the above process, the fabrication of the micro-radiation thermal meter 10b can be roughly completed.

[0119] In this embodiment, the micro-radiation thermal meter 10b and Figure 2 The main difference between the micro-radiative thermal meter 10a and the micro-radiative thermal meter 10b is that the sidewall 140w of the first insulating layer 140a and the sidewall 160w of the protective layer 160 define an opening OP3, wherein the sidewall 140w and the sidewall 160w are substantially flush. Furthermore, the insulating layer 140 (i.e., the first insulating layer 140a) and the protective layer 160 located in the first region R1 are separate from the insulating layer 140 (i.e., the second insulating layer 140b) and the protective layer 160 located in the second region R2.

[0120] Figures 5A to 5C This is a cross-sectional schematic diagram illustrating the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention. It must be noted here that... Figures 5A to 5C The embodiments follow Figure 2 , Figures 3A to 3F The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here. Figures 5A to 5C Can be continued Figure 3C A cross-sectional schematic diagram of the manufacturing process of a microradiative thermal meter. (About...) Figures 3A to 3C The steps are explained in the foregoing embodiments and will not be repeated here.

[0121] Please refer to Figure 5AAn insulating layer 140 is formed on the substrate 100 to cover the first patterned metal layer 110, the second patterned metal layer 130, and the sacrificial layer 120, and trenches T are filled to form an isolation structure 142. Then, an opening OP2 is formed in the insulating layer 140. The opening OP2 corresponds to either the first reflective layer 112a or the second reflective layer 112b, and exposes the sacrificial layer 120 corresponding to either the first reflective layer 112a or the second reflective layer 112b. In some embodiments, the opening OP2 located in the first region R1 exposes the sacrificial layer 120 corresponding to the first reflective layer 112a and a portion of the sidewall of the pixel connection electrode 134a. The opening OP2 located in the second region R2 exposes the sacrificial layer 120 corresponding to the second reflective layer 112b and a portion of the sidewall of the reference pixel connection electrode 134b.

[0122] In some embodiments, an opening OP3 is formed in the first insulating layer 140a (i.e., the insulating layer 140 located in the first region R1) to separate the first insulating layer 140a from the isolation structure 142. The opening OP3 exposes the sacrificial layer 120 of the first region R1. In some embodiments, the opening OP3 and the opening OP2 may be performed in the same process step, but the invention is not limited thereto.

[0123] In some embodiments, an opening may be formed in the second insulating layer 140b to separate the second insulating layer 140b from the isolation structure 142 and expose the sacrificial layer 120 of the second region R2. However, the invention is not limited thereto, and in other embodiments, an opening may not be formed in the second insulating layer 140b.

[0124] Please refer to Figure 5B A patterned thermal material layer 150 is formed in the opening OP2 of the insulating layer 140. The patterned thermal material layer 150 includes a first thermal layer 150a located in the first region R1 and a second thermal layer 150b located in the second region R2. Specifically, the first thermal layer 150a is formed on the sidewall and bottom surface of the opening OP2 in the first region R1, and is laterally connected to the pixel connection electrode 134a exposed through the opening OP2. The second thermal layer 150b is formed on the sidewall and bottom surface of the opening OP2 in the second region R2, and is laterally connected to the reference pixel connection electrode 134b exposed through the opening OP2.

[0125] In some embodiments, the first thermal layer 150a extends from the corresponding opening OP2 and is formed on the top surface of the first insulating layer 140a, and the second thermal layer 150b extends from the corresponding opening OP2 and is formed on the top surface of the second insulating layer 140b (i.e., the insulating layer 140 located in the second region R2).

[0126] Please refer to Figure 5CThe sacrificial layer 120 located in the first region R1 is removed to form a cavity C. For example, the sacrificial layer 120 in the first region R1 can be wet-etched through the opening OP3 to form a cavity C in the first region R1. Since the isolation structure 142 separates the sacrificial layer 120 located in the first region R1 from the sacrificial layer 120 located in the second region R2, the etching solution will not flow into the second region R2. Only the sacrificial layer 120 in the first region R1 is removed, while the sacrificial layer 120 remaining in the second region R2 is also called the spacer layer S.

[0127] Subsequently, a protective layer 160 can be formed on the patterned thermal material layer 150, such that the protective layer 160 is disposed on the surfaces of the first insulating layer 140a, the isolation structure 142, and the second insulating layer 140b, and covers the patterned thermal material layer 150. In this embodiment, the protective layer 160 is formed after the sacrificial layer 120 in the first region R1 is removed, but the present invention is not limited thereto, and the protective layer 160 can also be formed as follows. Figures 4A to 4B The embodiment is formed before the sacrificial layer 120 of the first region R1 is removed.

[0128] After the above process, the fabrication of the micro-radiation thermal meter 10c can be roughly completed.

[0129] In this embodiment, the micro-radiation thermal meter 10c and Figure 2 The main difference between the micro-radiative thermal meter 10a and the micro-radiative thermal meter 10c is that the micro-radiative thermal meter 10c includes a substrate 100, a plurality of pixel units PX1, at least one reference pixel PX2, and a protective layer 160. The plurality of pixel units PX1 are arranged in an array on the substrate 100, and each of the plurality of pixel units PX1 includes a first reflective layer 112a, a first thermally sensitive layer 150a, and a first insulating layer 140a. The first reflective layer 112a is disposed on the substrate 100. The first insulating layer 140a is disposed on the substrate 100. The first thermally sensitive layer 150a is disposed on and extends through the first insulating layer 140a, and is suspended above the first reflective layer 112a, with a cavity C spaced between the first thermally sensitive layer 150a and the first reflective layer 112a.

[0130] The reference pixel PX2 includes a second reflective layer 112b, a second thermally sensitive layer 150b, and a second insulating layer 140b. The second reflective layer 112b is disposed on the substrate 100. A spacer S covers the second reflective layer 112b. The second insulating layer 140b is disposed on the spacer S. The second thermally sensitive layer 150b is disposed on the second insulating layer 140b and extends through the second insulating layer 140b to contact the spacer S. That is, the spacer S is disposed between the second reflective layer 112b and the second thermally sensitive layer 150b, and is in direct contact with both the second thermally sensitive layer 150b and the second reflective layer 112b.

[0131] The protective layer 160 covers multiple pixel units PX1 and a reference pixel PX2. The first insulating layer 140a of the multiple pixel units PX1 and the second insulating layer 140b of the reference pixel PX2 are separated from each other.

[0132] Figure 6 This is a cross-sectional schematic diagram of a microradiative thermal meter according to another embodiment of the present invention. It must be noted here that... Figure 6 The embodiments follow Figure 2 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here. Figure 6 The top view diagram can be referenced. Figure 1 ,but Figure 6 The embodiments do not include an isolation structure and do not include a spacer between the second reflective layer and the second thermally sensitive layer.

[0133] Please refer to Figure 6 , Figure 6 The main difference between the micro-radiative thermal meter 20 and the micro-radiative thermal meter 10a is that the second insulating layer 140b of the micro-radiative thermal meter 20 is located between the second reflective layer 112b and the second thermistor layer 150b, and is in direct contact with both the second reflective layer 112b and the second thermistor layer 150b. The second insulating layer 140b can cover the top and sidewalls of the second reflective layer 112b. In this way, the second insulating layer 140b can help absorb radiant heat, thereby reducing the thermal response of the second thermistor layer 150b.

[0134] In some embodiments, the microradiation thermal meter 20 further includes a partition S disposed between the second insulating layer 140b and the second conductive electrodes 114b, 116b and the second metal electrode 132b. In some embodiments, the partition S partially covers the second conductive electrodes 114b, 116b.

[0135] In some embodiments, the reference pixel PX2 may include a cavity C' located outside the second conductive electrodes 114b, 116b and the second metal electrode 132b (i.e., on the side of the second conductive electrodes 114b, 116b and the second metal electrode 132b away from the second reflective layer 112b). In some embodiments, the cavity C of the first region R1 may extend between the adjacent pixel unit PX1 and the reference pixel PX2. In other words, the cavity C of the pixel unit PX1 and the cavity C' of the adjacent reference pixel PX2 are interconnected.

[0136] Figures 7A to 7D This is a cross-sectional schematic diagram illustrating the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention. It must be noted here that... Figures 7A to 7D The embodiments follow Figure 2 , Figures 3A to 3F The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here. Figures 7A to 7D Can be continued Figure 3A A cross-sectional schematic diagram of the manufacturing process of a microradiative thermal meter. (About...) Figure 3A The steps are explained in the foregoing embodiments and will not be repeated here.

[0137] Please refer to Figure 7A A sacrificial layer 120 is formed on the substrate 100, wherein the sacrificial layer 120 has a plurality of first openings OP1 and second openings OP4. For example, a sacrificial material layer (not shown) may be conformally formed on the substrate 100 firstly, and then the sacrificial material layer may be patterned to form a plurality of first openings OP1 and second openings OP4. The plurality of first openings OP1 expose portions of the first conductive electrodes 114a, 116a and portions of the second conductive electrodes 114b, 116b. The second openings OP4 expose the second reflective layer 112b and portions of the substrate 100 surrounding the second reflective layer 112b.

[0138] Please refer to Figure 7B A second patterned metal layer 130 is formed in the first opening OP1 and on a portion of the sacrificial layer 120 and the portion of the substrate 100 exposed by the second opening OP4. The second patterned metal layer 130 may include a first connection line 130a located in the first region R1 and a second connection line 130b located in the second region R2.

[0139] In some embodiments, the first connection line 130a includes a first metal electrode 132a and a pixel connection electrode 134a. The first metal electrode 132a is formed in a first opening OP1 in the first region R1 to be electrically connected to the first conductor electrodes 114a and 116a. The pixel connection electrode 134a is formed on the sacrificial layer 120 of the first region R1 and is electrically connected to the first metal electrode 132a. In some embodiments, the second connection line 130b includes a second metal electrode 132b and a reference pixel connection electrode 134b. The second metal electrode 132b is formed in a first opening OP1 in the second region R2 to be electrically connected to the second conductor electrodes 114b and 116b. The reference pixel connection electrode 134b is formed on the portion of the substrate 100 exposed by the second opening OP4 in the second region R2 and is electrically connected to the second metal electrode 132b.

[0140] Please refer to Figure 7CAn insulating layer 140 is conformally formed on the substrate 100 and a second opening OP4 is filled in to cover the second reflective layer 112b, the second patterned metal layer 130, and the sacrificial layer 120. In some embodiments, the insulating layer 140 may be divided into a first insulating layer 140a formed in the first region R1 and a second insulating layer 140b formed in the second region R2.

[0141] Then, multiple openings (not shown) can be formed in the insulating layer 140 to expose a portion of the pixel connection electrode 134a or the reference pixel connection electrode 134b.

[0142] Subsequently, a patterned thermally sensitive material layer 150 is formed on the insulating layer 140. The patterned thermally sensitive material layer 150 includes a first thermally sensitive layer 150a located in the first region R1 and a second thermally sensitive layer 150b located in the second region R2. The first thermally sensitive layer 150a corresponds to the first reflective layer 112a, and the second thermally sensitive layer 150b corresponds to the second reflective layer 112b. Specifically, the first thermally sensitive layer 150a is formed on the first insulating layer 140a corresponding to the first reflective layer 112a and extends through the first insulating layer 140a to connect the first thermally sensitive layer 150a to the pixel connection electrode 134a. The second thermally sensitive layer 150b is formed on the second insulating layer 140b corresponding to the second reflective layer 112b and extends through the second insulating layer 140b to connect the second thermally sensitive layer 150b to the reference pixel connection electrode 134b.

[0143] Please refer to Figure 7D The sacrificial layer 120 located in the first region R1 is removed to form a cavity C. For example, the insulating layer 140 can be patterned first to form an opening OP3 through the insulating layer 140 to expose the sacrificial layer 120. After the insulating layer 140 is patterned, the first insulating layer 140a and the second insulating layer 140b can be separated from each other. In some embodiments, opening OP3 and opening OP2 can be performed in the same process step, but the present invention is not limited thereto.

[0144] Subsequently, the sacrificial layer 120 is wet-etched through the opening OP3, forming a cavity C in the first region R1. In some embodiments, the opening OP3 may be located between the first region R1 and the second region R2. In some embodiments, during the wet etching process, a portion of the sacrificial layer 120 located in the second region R2 is removed, forming a cavity C' in the second region R2. For example, in the second region R2, the sacrificial layer 120 located outside the second metal electrode 132b and the second wire electrodes 114b and 116b (i.e., the side of the second metal electrode 132b and the second wire electrodes 114b and 116b away from the second reflective layer 112b) is removed during the wet etching, while the sacrificial layer 120 located inside the second metal electrode 132b and the second wire electrodes 114b and 116b (i.e., the side of the second metal electrode 132b and the second wire electrodes 114b and 116b close to the second reflective layer 112b) is retained to form a spacer layer S.

[0145] In some embodiments, the cavity C of the first region R1 and the cavity C' of the second region R2 can be connected.

[0146] Please refer to Figure 6 A protective layer 160 is formed on the patterned thermal material layer 150, such that the protective layer 160 covers the surfaces of the first region R1 and the second region R2. In this embodiment, the protective layer 160 is formed after the sacrificial layer 120 of the first region R1 is removed, but the present invention is not limited thereto, and the protective layer 160 can also be formed as follows. Figures 4A to 4B The embodiment is formed before the sacrificial layer 120 of the first region R1 is removed.

[0147] After the above process, the fabrication of the micro-radiation thermal measuring instrument 20 can be roughly completed.

[0148] Figure 8 This is a cross-sectional schematic diagram of a microradiative thermal meter according to another embodiment of the present invention. It must be noted here that... Figure 8 The embodiments follow Figure 2 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here. Figure 8 The top view diagram can be referenced. Figure 1 ,but Figure 8 The embodiments do not include isolation structures and partitions.

[0149] Please refer to Figure 8 , Figure 8The main difference between the micro-radiative thermal meter 30 and the micro-radiative thermal meter 10a is that the reference pixel PX2 of the micro-radiative thermal meter 30 does not include a spacer or cavity. The second insulating layer 140b is located between the second reflective layer 112b and the second thermistor layer 150b, and is in direct contact with both. The second insulating layer 140b covers the top and sidewalls of the second reflective layer 112b. In this way, the second insulating layer 140b helps absorb radiant heat, thereby reducing the thermal response of the second thermistor layer 150b.

[0150] exist Figure 8 In this embodiment, the second connection line 130b covers the top and sidewalls of the second conductive electrodes 114b and 116b, and extends onto the substrate 100 to connect with the second thermistor layer 150b. That is, the second connection line 130b does not have a second metal electrode. In some embodiments, viewed from above, the second connection line 130b has a serpentine or S-shaped pattern, but the invention is not limited thereto.

[0151] Figures 9A to 9D This is a cross-sectional schematic diagram illustrating the manufacturing process of a micro-radiative thermal meter according to another embodiment of the present invention. It must be noted here that... Figures 9A to 9D The embodiments follow Figure 2 , Figures 3A to 3F The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here. Figures 9A to 9D Can be continued Figure 3A A cross-sectional schematic diagram of the manufacturing process of a microradiative thermal meter. (About...) Figure 3A The steps are explained in the foregoing embodiments and will not be repeated here.

[0152] Please refer to Figure 9A A sacrificial layer 120 is formed on a first region R1 of the substrate 100, wherein the sacrificial layer 120 has a plurality of first openings OP1. For example, a photoresist layer (not shown) may be covered on a second region R2, and then a sacrificial material layer (not shown) may be formed on the substrate 100. The sacrificial material layer is then patterned to form a plurality of first openings OP1 in the first region R1. The plurality of first openings OP1 expose portions of the first conductive electrodes 114a, 116a. The photoresist layer is then removed. That is, the sacrificial layer 120 is not formed on the second region R2.

[0153] Please refer to Figure 9BA second patterned metal layer 130 is formed on a portion of the first patterned metal layer 110, a portion of the sacrificial layer 120, and a portion of the substrate 100. The second patterned metal layer 130 may include a first connection line 130a located in the first region R1 and a second connection line 130b located in the second region R2.

[0154] In some embodiments, the first connection line 130a includes a first metal electrode 132a and a pixel connection electrode 134a. The first metal electrode 132a is formed in the first opening OP1 of the first region R1 to be electrically connected to the first conductor electrodes 114a and 116a. The pixel connection electrode 134a is formed on the sacrificial layer 120 of the first region R1 and is electrically connected to the first metal electrode 132a. In some embodiments, the second connection line 130b is formed on the top and sidewalls of the second conductor electrodes 114b and 116b and extends to the substrate 100.

[0155] Please refer to Figure 9C An insulating layer 140 is conformally formed on the substrate 100 to cover the first patterned metal layer 110, the second patterned metal layer 130, the sacrificial layer 120, and the substrate 100. In some embodiments, the insulating layer 140 may be divided into a first insulating layer 140a formed in a first region R1 and a second insulating layer 140b formed in a second region R2.

[0156] Then, multiple openings (not shown) can be formed in the insulating layer 140 to expose portions of the pixel connection electrode 134a or the second connection line 130b.

[0157] Subsequently, a patterned thermal material layer 150 is formed on the insulating layer 140. The patterned thermal material layer 150 includes a first thermal layer 150a located in the first region R1 and a second thermal layer 150b located in the second region R2. The first thermal layer 150a corresponds to the first reflective layer 112a, and the second thermal layer 150b corresponds to the second reflective layer 112b. Specifically, the first thermal layer 150a is formed on the first insulating layer 140a corresponding to the first reflective layer 112a and extends through the first insulating layer 140a to connect the first thermal layer 150a to the pixel connection electrode 134a. The second thermal layer 150b is formed on the second insulating layer 140b corresponding to the second reflective layer 112b and extends through the second insulating layer 140b to connect the second thermal layer 150b to the second connection line 130b.

[0158] Please refer to Figure 9DThe sacrificial layer 120 located in the first region R1 is removed to form a cavity C. For example, the insulating layer 140 can be patterned first to form an opening OP3 through the first insulating layer 140a, exposing the sacrificial layer 120. After patterning, the first insulating layer 140a and the second insulating layer 140b can be separated from each other. In some embodiments, opening OP3 and opening OP2 can be performed in the same process step, but the present invention is not limited thereto. Then, the sacrificial layer 120 is wet-etched through opening OP3 to form a cavity C in the first region R1.

[0159] Please refer to Figure 8 A protective layer 160 is formed on the patterned thermal material layer 150, such that the protective layer 160 covers the surfaces of the first region R1 and the second region R2. In this embodiment, the protective layer 160 is formed after the sacrificial layer 120 of the first region R1 is removed, but the present invention is not limited thereto, and the protective layer 160 can also be formed as follows. Figures 4A to 4B The embodiment is formed before the sacrificial layer 120 of the first region R1 is removed.

[0160] After the above process, the micro-radiation thermal measuring instrument 30 can be roughly completed.

[0161] Figure 10 This is a top view schematic diagram of a micro-radiative thermal meter according to another embodiment of the present invention. Figure 11 This is a cross-sectional schematic diagram of a microradiative thermal meter according to another embodiment of the present invention. Figure 11 It can be along Figure 10 A sectional view along section line B-B'. It must be noted here that... Figure 10 and Figure 11 The embodiments follow Figure 1 and Figure 2 The component designations and partial contents of the embodiments are as follows, wherein the same or similar designations are used to represent the same or similar components, and descriptions of the same technical content are omitted. For descriptions of the omitted parts, please refer to the foregoing embodiments, and they will not be repeated here. The manufacturing process of the micro-radiation thermal meter 40 is similar to that of the micro-radiation thermal meter 10a, and can be referred to... Figures 3A to 3F To understand.

[0162] Please refer to Figure 10 and Figure 11The main difference between the micro-radiative thermal meter 40 and the micro-radiative thermal meter 10a in this embodiment is that the first thermal layer 150a of the pixel unit PX1 partially overlaps with the pixel connection electrode 134a, and the second thermal layer 150b of the reference pixel PX2 partially overlaps with the reference pixel connection electrode 134b. The first thermal layer 150a passes through the first insulating layer 140a and extends to cover the top surface of the pixel connection electrode 134a, and the second thermal layer 150b passes through the second insulating layer 140b and extends to cover the top surface of the reference pixel connection electrode 134b.

[0163] In summary, the micro-radiative thermal measurement meter of the present invention includes multiple pixel units and at least one reference pixel, which can be formed in the same manufacturing process to simplify the manufacturing process and help improve its integration density.

Claims

1. A method for manufacturing a micro-radiation thermal meter, comprising: A substrate is provided, wherein the substrate has a first region and a second region; A first patterned metal layer is formed on the substrate, wherein the first patterned metal layer includes a first reflective layer located in the first region and a second reflective layer located in the second region; A sacrificial layer is formed on the first region, wherein, in the process of forming the sacrificial layer on the first region, the sacrificial layer is further formed on the second region to cover a portion of the first patterned metal layer, wherein the sacrificial layer has a second opening to expose the second reflective layer; A second patterned metal layer is formed on a portion of the sacrificial layer and a portion of the first patterned metal layer; An insulating layer is formed on the substrate to cover the first patterned metal layer, the second patterned metal layer, and the sacrificial layer; A patterned thermal material layer is formed on the insulating layer, wherein the patterned thermal material layer includes a first thermal layer located in the first region and a second thermal layer located in the second region, the first thermal layer corresponding to the first reflective layer and the second thermal layer corresponding to the second reflective layer; The sacrificial layer located in the first region is removed to form a cavity.

2. The method for manufacturing the micro-radiation thermal meter according to claim 1 further includes: Before forming the insulating layer on the substrate, trenches are formed in the sacrificial layer to expose a portion of the substrate surface; as well as In the step of forming the insulating layer on the substrate, the insulating layer further fills the trench to isolate the sacrificial layer located in the first region from the sacrificial layer located in the second region.

3. The method for manufacturing a micro-radiative thermal meter according to claim 1, wherein the first patterned metal layer further comprises: A pair of first conductive electrodes are located in the first region, wherein the first reflective layer is located between the pair of first conductive electrodes; as well as A pair of second conductive electrodes are located in the second region, wherein the second reflective layer is located between the pair of second conductive electrodes. The step of forming the second patterned metal layer on a portion of the sacrificial layer and a portion of the first patterned metal layer includes: Multiple first openings are formed in the sacrificial layer to expose portions of the pair of first wire electrodes and portions of the pair of second wire electrodes; as well as The second patterned metal layer is formed on the sacrificial layer and in the plurality of first openings.

4. The method of manufacturing a micro-radiation thermal meter according to claim 1, wherein in the step of forming the insulating layer on the substrate, the insulating layer further fills the second opening to cover the second reflective layer.

5. The method for manufacturing a micro-radiative thermal meter according to claim 1, wherein the first patterned metal layer further comprises: A pair of first conductive electrodes are located in the first region, wherein the first reflective layer is located between the pair of first conductive electrodes; as well as A pair of second conductive electrodes are located in the second region, wherein the second reflective layer is located between the pair of second conductive electrodes. The step of forming the second patterned metal layer on a portion of the sacrificial layer and a portion of the first patterned metal layer includes: Multiple first openings are formed in the sacrificial layer of the first region to expose portions of the pair of first wire electrodes; as well as The second patterned metal layer is formed on the sacrificial layer in the first region and in the plurality of first openings, as well as on the pair of second conductive electrodes and a portion of the substrate in the second region.

6. The method for manufacturing a micro-radiation thermal meter according to claim 1, wherein the step of forming the patterned thermistor layer on the insulating layer comprises: An opening is formed in the insulating layer to expose a portion of the sacrificial layer corresponding to the first reflective layer or the second reflective layer; as well as The patterned thermal material layer is formed in the opening of the insulating layer.

7. The method for manufacturing the micro-radiation thermal meter according to claim 1 further includes: A protective layer is formed on the patterned thermosensitive material layer.

8. The method for manufacturing the micro-radiation thermal meter according to claim 1 further includes: Before forming the first patterned metal layer on the substrate, a substrate insulating layer is formed on the substrate.

9. A method for manufacturing a micro-radiation thermal meter, comprising: A substrate is provided, wherein the substrate has a first region and a second region; A substrate insulating layer is formed on the substrate; A first patterned metal layer is formed on the substrate, wherein the first patterned metal layer includes a first reflective layer located in the first region and a second reflective layer located in the second region; A sacrificial layer is formed on the substrate to cover the surfaces of the first region and the second region; A second patterned metal layer is formed on a portion of the sacrificial layer and a portion of the first patterned metal layer; An insulating layer is formed on the substrate to cover the first patterned metal layer, the second patterned metal layer, and the sacrificial layer; A patterned thermal material layer is formed on the insulating layer, wherein the patterned thermal material layer includes a first thermal layer located in the first region and a second thermal layer located in the second region, the first thermal layer corresponding to the first reflective layer and the second thermal layer corresponding to the second reflective layer; The sacrificial layer located in the first region is removed to form a cavity, and the sacrificial layer in the second region is retained to form a partition.

10. The method of manufacturing a micro-radiation thermal meter according to claim 9, wherein the partition is located between the second reflective layer and the insulating layer, and is in direct contact with the second reflective layer.

11. The method of manufacturing a micro-radiation thermal meter according to claim 9, wherein the partition layer is in direct contact with the second thermistor layer.

12. The method for manufacturing the micro-radiation thermal meter according to claim 9 further includes: Before forming the insulating layer on the substrate, trenches are formed in the sacrificial layer to expose a portion of the substrate surface; as well as In the step of forming the insulating layer on the substrate, the insulating layer is further filled into the trench to form an isolation structure that isolates the sacrificial layer located in the first region from the sacrificial layer located in the second region.

13. A method for manufacturing a micro-radiation thermal meter, comprising: A substrate is provided, wherein the substrate has a first region and a second region; A substrate insulating layer is formed on the substrate; A first patterned metal layer is formed on the substrate, wherein the first patterned metal layer includes a first reflective layer located in the first region and a second reflective layer located in the second region; A sacrificial layer is formed on the first region of the substrate; A second patterned metal layer is formed on a portion of the sacrificial layer and a portion of the first patterned metal layer; An insulating layer is formed on the substrate to cover the first patterned metal layer, the second patterned metal layer and the sacrificial layer, wherein the insulating layer includes a first insulating layer located in the first region and a second insulating layer located in the second region, wherein the second reflective layer is in direct contact with the second insulating layer; A patterned thermal material layer is formed on the insulating layer, wherein the patterned thermal material layer includes a first thermal layer located in the first region and a second thermal layer located in the second region, the first thermal layer corresponding to the first reflective layer and the second thermal layer corresponding to the second reflective layer; The sacrificial layer is removed to form a cavity in the first region.

14. The method of manufacturing a micro-radiative thermal meter according to claim 13, wherein the first patterned metal layer further comprises: A pair of second conductive electrodes are disposed on the second region of the substrate, and the second reflective layer is located between the pair of second conductive electrodes.

15. The method of manufacturing a microradiative thermal meter according to claim 14, wherein a portion of the second patterned metal layer covers the top and sidewalls of the pair of second conductive electrodes.

16. The method of manufacturing a microradiation thermal meter according to claim 14, wherein in the process of forming the sacrificial layer on the first region, the sacrificial layer is further formed on the second region to cover the pair of second conductive electrodes, wherein the sacrificial layer has a second opening to expose the second reflective layer.

17. The method of manufacturing a microradiation thermal meter according to claim 16, wherein during the removal of the sacrificial layer, a portion of the sacrificial layer located in the second region is removed to form a cavity in the second region, wherein the cavity in the first region is connected to the cavity in the second region.

18. The method of manufacturing a microradiation thermal meter according to claim 17, wherein during the removal of the sacrificial layer, another portion of the sacrificial layer located in the second region is retained to form a partition layer, the partition layer partially covering the pair of second wire electrodes.

19. A micro-radiation thermal meter, comprising: A substrate having a substrate insulating layer on its surface; A plurality of pixel units are arranged in an array on the insulating layer of the substrate, wherein each of the plurality of pixel units includes: A first reflective layer is disposed on the substrate; A first insulating layer is disposed on the first reflective layer, wherein a cavity separates the first insulating layer from the first reflective layer; and A first thermally sensitive layer is disposed on the first insulating layer; At least one reference pixel is disposed on the substrate and located on at least one side of the plurality of pixel units, wherein the at least one reference pixel includes: A second reflective layer is disposed on the substrate; A sacrificial layer is disposed on top of the second reflective layer; A second insulating layer is disposed above the sacrificial layer; and A second thermally sensitive layer is disposed above the second reflective layer, and a sacrificial layer and a second insulating layer are present between the second reflective layer and the second thermally sensitive layer; and An isolation structure is disposed between the plurality of pixel units and the reference pixel, wherein the first insulating layer of the plurality of pixel units and the second insulating layer of the at least one reference pixel are separated from each other.

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