Infrared, electrical and mechanical imaging apparatus and method for obtaining nanomaterials

Abstract

The application relates to the technical field of material characterization, and particularly relates to an imaging device for acquiring infrared, electrical and mechanical images of nanomaterials, which comprises an atomic force microscope, the atomic force microscope having a probe and a sample placement area; further comprising a light source generator for emitting an infrared light source, the infrared light source being irradiated to the sample placement area; a first conductive part being arranged on the sample placement area, the first conductive part being electrically connected with an external power supply end to apply a voltage to the sample, the probe being connected with the voltage on the sample through a second conductive part; the probe acquiring a current signal and a deflection signal on a to-be-measured area of the sample; an analysis module on the imaging device analyzing the current signal and the deflection signal to acquire infrared imaging, electrical imaging and mechanical imaging on the to-be-measured area of the sample. The imaging device of the application can acquire multi-modal imaging of the surface of the sample, so that the detection steps of the performance of the sample are optimized, and the accuracy of the performance detection of the sample is improved.

Description

Technical Field

[0001] This invention relates to the technical field of materials characterization, and more specifically to an infrared, electrical, and mechanical imaging device and method for acquiring nanomaterials. Background Technology

[0002] In recent years, the rapid development of nanomaterials, solar cells, semiconductors, organometallic composites and other fields has led to the development of nanoscale features that affect the performance of these materials. As a result, understanding how to obtain the properties of these materials has become a top priority in their research.

[0003] When studying the microscopic properties of nanomaterials, it is necessary to obtain the material's mechanical, infrared, and electrical properties. Currently, to detect all three properties of the same region of a material, the sample needs to be labeled and then tested step by step. This makes the sample performance testing process cumbersome, and the properties of the sample surface may have changed during the testing process, leading to inaccurate test results. Summary of the Invention

[0004] To overcome the shortcomings of the prior art, the present invention aims to provide an infrared, electrical, and mechanical imaging device for acquiring nanomaterials. By applying infrared radiation and voltage to the sample in the peak force tapping mode of an atomic force microscope, the device can simultaneously acquire mechanical, electrical, and infrared images of the sample at the same location within the same time period, thereby optimizing the sample performance detection steps and improving the accuracy of sample performance detection.

[0005] Another object of the present invention is to provide an infrared, electrical and mechanical imaging method for acquiring nanomaterials.

[0006] One embodiment of the present invention provides an imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials, including an atomic force microscope (AFM), which has a probe and a sample placement area, and further includes:

[0007] A light source generator is used to emit infrared light and illuminate the sample placement area;

[0008] The first conductive element is disposed in the sample placement area and electrically connected to the external power supply terminal. The first conductive element applies voltage to the sample in the sample placement area.

[0009] The second conductive element is disposed on the probe, and the probe conducts electricity with the sample through the second conductive element;

[0010] The probe acquires current and deflection signals in the test area of ​​the sample;

[0011] The imaging device is equipped with an analysis module, which is used to analyze current signals and deflection signals to obtain infrared imaging, electrical imaging and mechanical imaging of the sample's test area.

[0012] In some embodiments, the analysis module includes an electrical sensor and an infrared demodulator. The electrical sensor is electrically connected to a probe to acquire a current signal, and the electrical sensor analyzes the current signal to acquire an electrical image of the sample.

[0013] The infrared demodulator is connected to the controller of the atomic force microscope to obtain the deflection signal. The infrared demodulator analyzes the deflection signal to obtain electrical and mechanical imaging of the sample.

[0014] In some embodiments, a through hole is provided on the sample placement area, the through hole is located below the probe, an infrared window is provided inside the through hole, the upper surface of the infrared window is located outside the through hole, and the upper surface of the infrared window is used to place the sample.

[0015] An infrared light source shines from below the through-hole onto the infrared window. The infrared light source penetrates the infrared window and is focused onto the surface of the sample located on the infrared window.

[0016] In some embodiments, the first conductive element is a first metal coating, which is disposed on the upper surface of the infrared window, and the infrared window is electrically connected to an external power supply terminal through the first metal coating.

[0017] The second conductive element is a second metal coating, which is disposed on the surface of the probe. The probe obtains the current signal on the test area of ​​the sample through the second metal coating.

[0018] In some embodiments, both the first metal coating and the second metal coating are thin-film metal coatings.

[0019] In some embodiments, two focusing lenses are provided directly below the through hole, and the two focusing lenses are symmetrically arranged so that the infrared light source is focused onto the infrared window through the two focusing lenses.

[0020] In some embodiments, the light source generator further includes a method for emitting visible light, wherein the visible light is beamed in parallel with an infrared light source.

[0021] In some embodiments, a displacement stage is also included, on which a sample placement area is disposed. The displacement stage changes the detection area of ​​the probe on the sample and changes the irradiation position of the infrared light source on the sample.

[0022] To achieve another objective of the present invention, one embodiment of the present invention provides an infrared, electrical, and mechanical imaging method for acquiring nanomaterials, which uses the imaging device of the present invention to detect samples, and further includes the following steps:

[0023] Illuminate the sample's test area with an infrared light source;

[0024] A voltage is applied to the sample, and the probe on the atomic force microscope conducts voltage with the area of ​​the sample to be measured;

[0025] The peak force tapping mode of an atomic force microscope is used to control the probe to detect the area to be tested in the sample;

[0026] The probe acquires the deflection signal on the test area of ​​the sample and simultaneously acquires the current signal on the test area of ​​the sample.

[0027] By analyzing the deflection and current signals, infrared, electrical, and mechanical imaging of the sample's test area can be obtained.

[0028] In some embodiments, the frequency of the infrared pulse is equal to the frequency at which the probe detects the area to be tested in the sample.

[0029] The beneficial effects of this invention are:

[0030] The technical solution of this invention involves placing the sample on the sample placement area of ​​an atomic force microscope (AFM). A voltage and an infrared light source are applied to the sample. The peak force tapping mode of the AFM controls the probe to detect the test area of ​​the sample. Simultaneously, the probe on the AFM acquires the current signal on the test area and the deflection signal generated by the interaction between the probe and the test area caused by the infrared pulse. The analysis module analyzes the current and deflection signals. This technical solution enables multimodal imaging of the sample surface, simultaneously acquiring mechanical, electrical, and infrared images of the sample at the same location within the same timeframe. This optimizes the sample performance detection steps and improves the accuracy of sample performance detection. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of the device for obtaining infrared, electrical, and mechanical imaging of nanomaterials according to the present invention;

[0032] Figure 2 for Figure 1 Enlarged view of point A in the middle;

[0033] Figure 3 This is a schematic diagram of the principle of the probe on the imaging device of the present invention acquiring current signals and deflection signals;

[0034] Figure 4 This is a multi-mode imaging image obtained from the surface of a perovskite sample using the technical solution of the present invention;

[0035] Figure 5 The present invention provides a current-voltage diagram and infrared spectrum obtained from the surface of a perovskite sample using the technical solution of the present invention.

[0036] Label Explanation:

[0037] 1. Atomic force microscope; 2. Probe; 3. Sample placement area; 4. Light source generator; 5. First conductive element; 6. Through hole; 7. Infrared window; 8. Focusing lens; 9. Electrical sensor; 10. Displacement stage; 11. Sample; 12. Second conductive element; 13. Infrared demodulator. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] It should be noted that the following detailed descriptions are exemplary and intended to provide further illustration of the invention. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. Furthermore, the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.

[0040] The inventive concept of this technical solution is as follows: Under the peak force tapping mode of an atomic force microscope, a voltage is applied to the sample and an infrared light source is irradiated. The probe simultaneously acquires the deflection signal and current signal of the sample in the same area, and analyzes the deflection signal and current signal. At the same time, the mechanical imaging, electrical imaging and infrared imaging of the measured area of ​​the sample are acquired.

[0041] Reference Figure 1 and Figure 2An embodiment of the present invention provides an imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials, including an atomic force microscope 1, which has a probe 2 and a sample placement area 3. The imaging device further includes a light source generator 4, a first conductive element 5, and a second conductive element 12. The light source generator 4 emits an infrared light source, which generates infrared pulses. The infrared light source irradiates the sample placement area 3, focusing on the area where the probe 2 interacts with the sample 11. The coverage area of ​​the infrared light source on the sample 11 is larger than the area of ​​interaction between the probe 2 and the sample 11; that is, the detection range of the probe 2 on the surface of the sample 11 is within the coverage area of ​​the infrared light source. The first conductive element 5 is disposed in the sample placement area 3 and is electrically connected to an external power supply terminal, applying a voltage to the sample 11 in the sample placement area 3. The second conductive element 12 is disposed on the probe 2, and the probe 2 conducts voltage to the sample 11 through the second conductive element 12. The imaging device is equipped with an analysis module. The probe 2 acquires the current signal and deflection signal on the test area of ​​the sample 11 and transmits the current signal and deflection signal to the analysis module. The analysis module analyzes the current signal and deflection signal to acquire infrared imaging, electrical imaging and mechanical imaging on the test area of ​​the sample 11.

[0042] Detection principle of the present invention

[0043] In use, the first conductive element 5 is electrically connected to an external power supply terminal using a wire, thus connecting the sample placement area 3 to the external power supply terminal and energizing the sample placement area 3. The sample 11 is then placed on the sample placement area 3, and the external power supply terminal applies a voltage to the sample 11. The focusing position of the infrared light source in the sample placement area 3 is adjusted so that the infrared light source illuminates the area where the probe 2 interacts with the sample 11. The peak force tapping mode of the atomic force microscope 1 is used to control the probe 2 to detect the test area of ​​the sample 11. The probe 2 on the atomic force microscope 1 simultaneously acquires the current signal on the test area of ​​the sample 11 and the deflection signal generated by the interaction between the probe 2 and the test area of ​​the sample 11 caused by the infrared pulse. The analysis module analyzes the current signal and the deflection signal. Using the imaging device of this invention, multimodal imaging of the sample 11 can be acquired, that is, the mechanical imaging, electrical imaging, and infrared imaging of the sample 11 at the same position at the same time can be acquired simultaneously, optimizing the detection steps of the sample 11 performance and improving the accuracy of the sample 11 performance detection.

[0044] Furthermore, refer to Figure 1 and Figure 2The analysis module includes an electrical sensor 9 and an infrared demodulator 13. The electrical sensor is electrically connected to the probe 2 to acquire a current signal, and the electrical sensor 9 analyzes the current signal to acquire an electrical image of the sample 11. The infrared demodulator 13 is connected to the controller of the atomic force microscope to acquire a deflection signal, and the infrared demodulator 13 analyzes the deflection signal to acquire an electrical and mechanical image of the sample.

[0045] Furthermore, refer to Figure 1 and Figure 2 A through-hole 6 is provided at the relative position of the sample placement area 3 and the probe 2, and the through-hole 6 is located below the probe 2. An infrared window 7 is provided inside the through-hole 6, and the upper surface of the infrared window 7 extends out of the through-hole 6. The upper surface of the infrared window 7 is used to place the sample 11. An infrared light source shines from below the through-hole 6 onto the infrared window 7, and the infrared light source penetrates the infrared window and is focused on the surface of the sample located on the infrared window. When the infrared light source shines from below the through-hole 6 onto the infrared window 7, the sample 11 is in a thin sheet shape, allowing the infrared light source to penetrate from the bottom of the sample 11 to the upper surface of the sample 11.

[0046] The technical solution adopted is as follows: when the thin sample 11 is detected by setting the through hole 6 and the infrared window 7, the infrared light source shines from below the through hole 6 onto the infrared window 7 and is focused on the upper surface of the thin sample 11, so as to avoid the infrared light source being blocked by the atomic force microscope 1 or the probe 2.

[0047] Furthermore, refer to Figure 1 and Figure 2 The first conductive element 5 is a first metal coating, which is disposed on the upper surface of the infrared window 7. The infrared window 7 is electrically connected to an external power supply terminal through the first metal coating. The second conductive element 12 is a second metal coating, which is disposed on the outer surface of the probe 2. The probe 2 acquires the current signal on the test area of ​​the sample 11 through the second metal coating.

[0048] The technical solution adopted is as follows: the first conductive element 5 adopts a first metal coating, and the probe 2 adopts a second metal coating to obtain the surface current of the sample 11. Both the first metal coating and the second metal coating can be deposited by vapor deposition on the surface of the infrared window 7 and the surface of the probe 2 respectively, which is simple in structure.

[0049] Furthermore, refer to Figure 1 and Figure 2 Both the first and second metal coatings are thin-film metal coatings.

[0050] The technical solution adopted is that both the first metal coating and the second metal coating are thin film structures. The first metal coating can reduce the influence on the infrared light source and improve the irradiation effect of the infrared light source on the sample 11. The second metal coating can reduce the influence on the probe 2 and improve the detection effect of the probe 2, thereby improving the overall detection accuracy of the sample 11.

[0051] Furthermore, refer to Figure 1 and Figure 2 In some embodiments, a focusing lens 8 is provided on both sides directly below the through hole 6, and the two focusing lenses 8 are symmetrically arranged so that the infrared light source is focused onto the infrared window 7 through the two focusing lenses 8.

[0052] The technical solution employs a focusing lens 8 to improve the illumination effect of the infrared light source.

[0053] Furthermore, refer to Figure 1 and Figure 2 The light source generator 4 also includes a beam for emitting visible light, which is combined with an infrared light source.

[0054] The technical solution employs visible light as a guide light to determine the focusing effect of the infrared light source, which can improve the accuracy of focusing the infrared light source on the test area of ​​sample 11.

[0055] Furthermore, refer to Figure 1 and Figure 2 The imaging device of the present invention also includes a displacement stage 10, a sample placement area 3 disposed on the displacement stage 10, and the displacement stage 10 changes the detection area of ​​the probe 2 on the sample 11 and changes the irradiation position of the infrared light source on the sample 11.

[0056] This technical solution involves moving the displacement stage 10 to change the relative position of the sample 11 and the probe 2, while maintaining the direction of the infrared light source. Since the entire surface of the sample 11 carries a voltage, it enables the detection of electrical, mechanical, and infrared characterization properties at different locations on the same sample 11.

[0057] Reference Figure 1 and Figure 2An infrared, electrical, and mechanical imaging method for obtaining nanomaterials involves irradiating the test area of ​​a sample 11 with an infrared light source, generating infrared pulses. A voltage is applied to the sample 11, and a probe 2 on an atomic force microscope 1 establishes voltage conduction with the test area of ​​the sample 11. The peak force tapping mode of the atomic force microscope 1 controls the probe 2 to detect the test area of ​​the sample 11. The probe 2 acquires the deflection signal and simultaneously acquires the current signal on the test area of ​​the sample 11. The deflection signal and current signal are analyzed to obtain infrared, electrical, and mechanical images of the test area of ​​the sample 11. The timing of the infrared light source irradiating the surface of the sample 11 can also be set: the infrared light source irradiates the contact area between the probe tip and the sample surface at the instant the probe tip contacts the sample surface. This technique prevents the infrared light source from irradiating the sample for too long, which could alter the sample properties, thus obtaining more accurate characterization parameters of the sample.

[0058] This technical solution involves applying voltage and an infrared light source to sample 11. The probe 2 on the atomic force microscope 1 simultaneously acquires the current signal on the test area of ​​sample 11 and the deflection signal generated by the interaction between probe 2 and the test area of ​​sample 11 caused by the infrared pulse. The current signal and the deflection signal are then analyzed. This technical solution allows for the simultaneous acquisition of mechanical, electrical, and infrared imaging of the same location on sample 11 within the same timeframe, optimizing the detection steps for sample 11 performance and improving the accuracy of sample 11 performance detection.

[0059] Furthermore, the frequency of the infrared pulse is equal to the frequency of the probe 2 when it detects the area to be tested on the sample 11.

[0060] The technical solution adopted is as follows: once the frequency of detection by the peak force tapping mode control probe 2 is determined, the frequency of the infrared light source can be adjusted to improve the accuracy of obtaining infrared imaging. Specific Implementation

[0062] Reference Figure 1 and Figure 2 An embodiment of the present invention provides an imaging device for acquiring infrared, electrical and mechanical properties of nanomaterials, including an atomic force microscope 1, a displacement stage 10, an infrared window 7, a first conductive element 5, a second conductive element 12 and a light source generator 4.

[0063] Reference Figure 1 and Figure 2The atomic force microscope 1 has a probe 2 and a sample placement area 3. The probe 2 is provided with a second conductive element 12, which is a second metal coating deposited on the probe by vapor deposition. The second metal coating is a thin-film metal coating located on the outer surface of the probe. A displacement stage 10 is located below the probe 2, and the sample placement area 3 is located on the upper surface of the displacement stage 10. The displacement stage 10 changes the detection area of ​​the probe 2 on the sample 11 and also changes the irradiation position of the infrared light source on the sample 11.

[0064] Reference Figure 1 and Figure 2 Both the displacement stage 10 and the sample placement area 3 are provided with a through hole 6. The through holes 6 on the displacement stage 10 and the sample placement area 3 are aligned vertically, and the through holes 6 are located below the probe 2. An infrared window 7 is disposed in the through hole 6, and the upper surface of the infrared window 7 extends above the sample placement area. The upper surface of the infrared window 7 is provided with a first conductive element 5, which is a first metal coating deposited on the upper surface of the infrared window 7 by vapor deposition. The first metal coating is an ultrathin metal layer. The atomic force microscope 1 is provided with a wire, which electrically connects the first metal coating to an external power supply terminal, so that the upper surface of the infrared window 7 is charged. The sample 11 is placed on the upper surface of the infrared window 7. The external power supply terminal applies a voltage to the sample 11 through the wire and the first metal coating on the infrared window 7. The probe 2 conducts through the second metal coating to the voltage on the sample 11.

[0065] Reference Figure 1 and Figure 2 The light source generator 4 includes a quantum cascade laser and a visible laser source to emit infrared and visible light. The infrared and visible light are beamed together using optical elements. The visible light serves as the navigation light, adjusting the illumination position of the infrared light source on the sample 11. The light source generator 4 is located on one side below the displacement stage 10. A focusing lens 8 is located on each side directly below the through-hole 6. The two focusing lenses 8 are symmetrically arranged, and the infrared light source is converged at the bottom of the infrared window 7 through the two focusing lenses 8. The infrared light source illuminates the sample 11 from the bottom and penetrates the entire sample 11, focusing the infrared light source onto the upper surface of the sample 11. The infrared light source is not blocked by the components on the atomic force microscope 1, improving the illumination effect of the infrared light source. The infrared light source penetrates the entire sample 11 from the bottom, which is suitable for thin-sheet samples 11. If the sample 11 is thick or the infrared light source has poor penetration, the illumination direction of the infrared light source needs to be adjusted, such as illuminating the sample 11 from above the sample placement area.

[0066] Reference Figure 1 and Figure 2The imaging device includes an analysis module comprising an electrical sensor 9 and an infrared demodulator 13. The electrical sensor is electrically connected to the probe 2 to acquire a current signal, and the infrared demodulator 13 is connected to the controller on the atomic force microscope to acquire a deflection signal. The probe 2 acquires the current signal from the surface of the sample 11 and the deflection signal generated by the interaction between the probe 2 and the test area of ​​the sample 11 caused by the infrared pulse. Both the current and deflection signals are transmitted to the analysis module. The electrical sensor analyzes the current signal to acquire an electrical image of the test area of ​​the sample 11. The infrared demodulator 13 analyzes the deflection signal to acquire infrared and mechanical images of the test area of ​​the sample 11. Specifically, the infrared demodulator 13 separates the mechanical and infrared parameters contained in the deflection signal to acquire pure infrared and pure mechanical images. The atomic force microscope 1 also includes a current amplifier, which is a high-bandwidth, low-noise amplifier. The current signal acquired by the probe 2 is transmitted to the current amplifier, and after amplification, it is transmitted to the electrical sensor 9. The electrical sensor 9 can be a current collector, which acquires the current and voltage curves on the sample surface.

[0067] The atomic force microscope 1 is equipped with a control system, which controls the operating mode of the atomic force microscope 1, the detection frequency of the probe 2, and the frequency of the infrared pulses. An infrared demodulator 13 is integrated into the control system. This invention allows the control system to synchronize the frequency of the infrared pulses with the detection frequency of the probe 2, i.e., to synchronize the frequency of the infrared pulses with the driving voltage signal of the probe. This ensures that the infrared light source illuminates the contact area between the probe tip and the sample surface at the instant the probe tip contacts the sample surface. This technical solution prevents excessively long infrared irradiation of the sample, which could alter the sample's properties, thereby obtaining more accurate sample characterization parameters.

[0068] Principle of use

[0069] Reference Figure 1 , Figure 2 and Figure 3Sample 11, which is thin-film, is placed on the infrared window 7 of the sample placement area 3. The infrared window 7 is electrically connected to an external power supply terminal using a first metal coating and wires to apply voltage to the sample 11. Probe 2 conducts through the second metal coating to the voltage on the sample 11, acquiring the current signal on the surface of sample 11. The infrared light source is adjusted so that it shines from the bottom of the displacement stage 10 through the through-hole 6 onto the infrared window 7, penetrating the sample 11 placed on the infrared window 7, focusing the infrared light source on the area where probe 2 interacts with sample 11. The atomic force microscope 1 is adjusted to peak force tapping mode. The controller of the atomic force microscope applies a driving voltage to the tip of the probe. Under the control of the driving voltage, the tip of the probe periodically approaches and moves away from the sample. The scanner on the atomic force microscope 1 controls probe 2 to detect the sample. During the approach and movement of the tip towards and away from the sample, the force curve signal and the current curve signal between the tip and the sample are collected by a four-quadrant detector. The force curve signal reflects the change in the force between the tip and the sample, and the current curve reflects the change in the current between the tip and the sample. The frequency of the infrared pulse is synchronized with the driving voltage signal so that the needle tip is excited by the infrared pulse when it approaches the sample. That is, at the instant the needle tip contacts the sample, the infrared light source illuminates the contact area between the needle tip and the sample. During infrared pulse excitation, the contact area on the force curve of the needle tip and the sample will show infrared oscillation. The infrared signal can be obtained by demodulating this oscillation signal through the infrared demodulator 13. The synchronously recorded current curve, force curve, and demodulated infrared signal are correlated to obtain synchronized mechanical, electrical, and infrared information acquisition. If it is necessary to obtain features on different areas of sample 11, the detection area of ​​probe 2 on sample 11 is changed by the displacement stage 10, while keeping the irradiation direction of the infrared light source unchanged. Since the entire surface of sample 11 carries voltage, the performance testing of electrical, mechanical, and infrared characterization at different locations of the same sample 11 can be achieved. Specific Implementation Example 1

[0071] This embodiment is a further illustration of the detection through the characterization of perovskite thin film samples.

[0072] A method for combined infrared, electrical, and mechanical characterization of tantalum mineral thin film samples using atomic force microscopy in peak force tapping mode includes the following steps:

[0073] S1. A 10-nanometer-thick metal gold layer is deposited on an infrared window 7 composed of barium fluoride. A perovskite precursor solution composed of lead iodide, methyl iodide, dimethylformamide, and dimethyl sulfoxide is spin-coated onto the metal gold layer and heated on a hot plate at 100°C for 10 minutes.

[0074] S2. Place the prepared sample on the displacement stage 10, connect the external power supply terminal to the metal gold layer using a wire, and adjust the optical elements and displacement stage 10 so that the infrared light is focused on the area where the sample and the tip of probe 2 interact.

[0075] S3. Set the infrared wavelength and optimize the infrared pulse frequency and pulse number parameters to obtain the deflection signal generated by the interaction between probe 2 and the sample's test area caused by the infrared pulse. Convert the deflection signal of the probe 2-sample interaction into an infrared signal and transmit the infrared signal to the input (input3) channel of the controller (NanoScope) of atomic force microscope 1.

[0076] S4. Apply a suitable voltage to the sample in the peak force tapping mode of atomic force microscope 1, and optimize the force and amplitude parameters of probe 2.

[0077] S5. Obtain infrared, electrical, and mechanical images of the same area on the sample surface.

[0078] like Figure 4 The images shown are morphology 40, infrared imaging 41, electrical imaging 42, adhesion force imaging 43, and modulus imaging 44, obtained simultaneously from the same area on the surface of the perovskite sample.

[0079] like Figure 5 As shown, by moving probe 2 to a specific area on the sample surface, an IV image (left) and an infrared spectrum (right) can be acquired at the same site. The infrared spectrum is obtained by scanning the laser frequency to acquire the intensity of the infrared signal at different wavelengths.

[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials, comprising an atomic force microscope having a probe and a sample placement area, characterized in that: Also includes: A light source generator is used to emit an infrared light source and illuminate the sample placement area; A first conductive element is disposed in the sample placement area and electrically connected to an external power supply terminal. The first conductive element applies a voltage to the sample in the sample placement area. A second conductive element is disposed on the probe, and the probe is connected to the voltage on the sample through the second conductive element; In the peak force tapping mode of the atomic force microscope, the probe simultaneously acquires the current signal and deflection signal on the test area of ​​the sample; The imaging device is equipped with an analysis module, which is used to analyze the current signal and the deflection signal to simultaneously acquire infrared imaging, electrical imaging and mechanical imaging of the sample's test area at the same time.

2. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 1, characterized in that: The analysis module includes an electrical sensor and an infrared demodulator. The electrical sensor is electrically connected to the probe to obtain the current signal, and the electrical sensor analyzes the current signal to obtain an electrical image of the sample. The infrared demodulator is connected to the controller of the atomic force microscope to obtain the deflection signal, and the infrared demodulator analyzes the deflection signal to obtain infrared imaging and mechanical imaging of the sample.

3. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 1, characterized in that: The sample placement area is provided with a through hole, which is located below the probe. An infrared window is provided inside the through hole, and the upper surface of the infrared window is located outside the through hole. The upper surface of the infrared window is used to place the sample. The infrared light source illuminates the infrared window from below the through hole, and the infrared light source penetrates the infrared window and is focused on the surface of the sample located on the infrared window.

4. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 3, characterized in that: The first conductive element is a first metal coating, which is disposed on the upper surface of the infrared window, and the infrared window is electrically connected to an external power supply terminal through the first metal coating. The second conductive element is a second metal coating, which is disposed on the surface of the probe. The probe obtains the current signal on the test area of ​​the sample through the second metal coating.

5. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 4, characterized in that: Both the first metal coating and the second metal coating are thin-film metal coatings.

6. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 3, characterized in that: Two focusing lenses are provided directly below the through hole. The two focusing lenses are symmetrically arranged, and the infrared light source is focused at the bottom of the infrared window through the two focusing lenses.

7. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 1, characterized in that: The light source generator also includes a means for emitting visible light, which is beamed in parallel with the infrared light source.

8. The imaging device for acquiring infrared, electrical, and mechanical properties of nanomaterials according to claim 1, characterized in that: It also includes a displacement stage, on which the sample placement area is disposed. The displacement stage changes the detection area of ​​the probe on the sample and changes the irradiation position of the infrared light source on the sample.

9. A method for acquiring infrared, electrical, and mechanical imaging of nanomaterials, characterized in that: The imaging device according to any one of claims 1 to 8 further includes the following steps: Illuminate the sample's test area with an infrared light source; A voltage is applied to the sample, and the probe on the atomic force microscope conducts voltage with the area of ​​the sample to be tested; The peak force tapping mode of the atomic force microscope is used to control the probe to detect the area to be tested in the sample; The probe acquires the deflection signal on the test area of ​​the sample and simultaneously acquires the current signal on the test area of ​​the sample. Analyze the deflection signal and the current signal to obtain infrared imaging, electrical imaging and mechanical imaging of the test area of ​​the sample.

10. The method for obtaining infrared, electrical, and mechanical imaging of nanomaterials according to claim 9, characterized in that: The frequency of the infrared pulse is equal to the frequency at which the probe detects the area to be tested in the sample.

Images