A passive memristor circuit using a mosfet and a capacitor

Abstract

The application discloses a passive memristor circuit composed of MOSFET and capacitor. The whole circuit is composed of only three MOS tubes M 1 、 M 2 、 M 3 and one capacitor C , without using any active module and other kinds of passive devices. Among them, M 1 and M 2 the charging and discharging of the capacitor C is controlled, and the voltage on the capacitor C is changed; M 3 the current flowing through the capacitor C is controlled; the resistance value of the circuit is equivalent to the ratio between the voltage across the circuit and M 3 the current flowing through. The designed circuit constitutes a two-terminal passive device, and the structure is simple, and can be applied in logic circuits such as NAND gate and NOR gate.

Description

Technical Field

[0001] This invention belongs to the field of novel devices, specifically relating to a passive memristor circuit composed of a MOSFET and a capacitor. Background Technology

[0002] Professor Cai Shaotang proposed the concept of memristors in 1971, and HP Labs physically realized nanoscale memristors in 2008. However, due to the complex design process and high cost, the commercial manufacturing of memristors remains a very challenging task. Many researchers choose to build memristor circuits to represent the circuit characteristics of memristors. Memristor circuits designed using MOSFETs offer researchers greater flexibility, and using MOSFETs to simulate memristors is the future trend. Among the memristor circuits proposed to date, some use a large number of MOSFETs and require bias voltage or bias current during operation, resulting in high power consumption and difficulties in integration; some memristor circuits are three-terminal devices, requiring additional grounding, which violates the concept that memristors are two-terminal devices; some memristor circuits use resistors and other passive components, limiting their applications. These memristor circuits have a limited range of applications, mostly used as variable resistors. Therefore, it is necessary to find entirely new memristor circuits, especially passive floating memristor circuits, observe the circuit characteristics of memristors, and study applications related to memristors. Summary of the Invention

[0003] The purpose of this invention is to propose a passive memristor circuit using MOSFETs and capacitors.

[0004] To achieve this invention, the technical solution adopted is: a passive memristor circuit composed of MOSFETs and capacitors, with the entire circuit consisting of only 3 MOSFETs. M 1 , M 2 , M 3 and 1 capacitor C constitute. M 1 and M 2 Control capacitor C Charging and discharging, M 3 The magnitude of the current is determined by the capacitor. C The voltage across the terminals determines the circuit's design. The circuit consists only of MOSFETs and capacitors, requiring no active modules or other passive components, resulting in a simple structure.

[0005] The beneficial effects of this invention are as follows: 1. This invention uses three MOSFETs and one capacitor to implement a memristor circuit, resulting in a simple structure. 2. This invention is a two-terminal passive device; the circuit does not require separate grounding and does not require any bias signal during operation. 3. This invention has been verified to be applicable to logic circuits such as NAND gates and NOR gates. Attached Figure Description

[0006] Figure 1 This is the overall circuit diagram of the designed passive memristor circuit.

[0007] Figure 2 This is the positive half-cycle loop diagram of the designed passive memristor circuit when a sinusoidal voltage signal is input.

[0008] Figure 3 This is the negative half-cycle loop diagram of the designed passive memristor circuit when a sinusoidal voltage signal is input.

[0009] Figure 4 This is the voltage-current characteristic curve of the passive memristor circuit with a capacitor capacitance of 20 pF and a sinusoidal voltage signal with a frequency of 100 kHz and an amplitude of 1 V applied across the circuit.

[0010] Figure 5 This is the voltage-current characteristic curve of the passive memristor circuit with a capacitor capacitance of 2 pF and a sinusoidal voltage signal with a frequency of 500 kHz and an amplitude of 1 V applied across the circuit.

[0011] Figure 6 This is the voltage-current characteristic curve of the passive memristor circuit designed with a capacitor capacitance of 200 fF, when a sinusoidal voltage signal with a frequency of 1 MHz and an amplitude of 1 V is applied across the circuit.

[0012] Figure 7 This is the voltage-current characteristic curve of the passive memristor circuit with a capacitor capacitance of 10 fF and a sinusoidal voltage signal with a frequency of 10 MHz and an amplitude of 1 V applied across the circuit.

[0013] Figure 8 The curves of input voltage and input current are shown for a passive memristor circuit with a capacitor capacitance of 10 pF, when a pulse voltage signal with a high level of 1 V, a low level of 0 V, a pulse width of 2 μs, and a period of 20 μs is applied across the circuit. Implementation

[0014] A passive memristor circuit using MOSFETs and capacitors, the entire circuit consists of 3 MOSFETs. M 1 , M 2 , M 3 and 1 capacitor C constitute.

[0015] Working principle: When a sinusoidal AC signal is applied across the two ends of the circuit, M 2 and M 1 Alternate conduction to control capacitors C The charging and discharging of the capacitor changes the capacitor's properties. C The magnitude of the voltage across the two ends. If the circuit is operating in the positive half-cycle, let... v B =0, v A First, it keeps rising. v A and v B The voltage difference between them reaches the MOSFET M 2 After the conduction condition is met, M 2 When the circuit is turned on, current flows through port A. M 2 Inflow capacitor C In the middle, capacitor C The capacitor is in a charging state at this time. C The voltage across the terminals gradually increases; then v A continuously decreasing, when v C Greater than v A At that time, capacitor C Stop charging, capacitor C pass M 2 Discharge to port A, at which time the capacitor C The voltage across the terminals gradually decreases until... M 2 Turn off; if the circuit is operating in the negative half-cycle, assume v B =0, v A First, continuously reduce... v A and v B The voltage difference between them reaches the MOSFET M 1 After the conduction condition is met,M 1 On, capacitor C pass M 1 Discharge to port A, at which time the capacitor C The voltage across the terminals gradually decreases; then v A It keeps rising, when v C Less than v A At that time, capacitor C Discharge stops, and current flows through port A. M 1 Inflow capacitor C In the middle, capacitor C The capacitor is in a charging state at this time. C The voltage across the terminals gradually increases until... M 1 Turn off. Therefore, the capacitor... C A voltage signal that changes periodically over time will be generated at both ends. M 3 Gate and substrate with capacitor C One end is connected, M 3 The magnitude of the current will be determined by the capacitor. C It is determined by the voltage at both ends. M 3 The aspect ratio is much greater than M 1 , M 2 Given its aspect ratio, the current flowing through the memristor circuit is equivalent to... M 3 The current flowing through it, the resistance of the memristor circuit is equivalent to the voltage across the circuit and the current passing through it. M 3 The ratio between the currents. The memristor constructed by the designed circuit is a two-terminal passive device. The entire circuit consists only of a MOSFET and a capacitor, without the need for any active modules or other types of passive components. Both port A and port B can be used as input and output ports. The circuit structure is simple and can be applied to logic circuits such as NAND gates and NOR gates.

[0016] Specific connection method: M 1 The source pole and M 2 The source is connected and connected to port A of the circuit; M 1 Drain and M 2 Drain, M3 The gate is connected, and with the capacitor C One end is connected; M 1 gate and M 2 gate, capacitor C The other end is connected and connected to port B of the circuit; M 3 substrate and M 3 Gate connection; M 3 Connect either the source or drain terminal to port A of the circuit; M 3 The other end of the source and drain is connected to port B of the circuit.

Claims

1. A passive memristor circuit using MOSFETs and capacitors, characterized in that the entire circuit consists of only 3 MOSFETs. M 1 , M 2 , M 3 and 1 capacitor C constitute, M 1 and M 2 They are two N-channel MOSFETs. M 3 It is a P-channel MOSFET, requiring no active modules or other types of passive components; among which, M 1 The source pole and M 2 The source is connected and connected to port A of the circuit; M 1 Drain and M 2 Drain, capacitor C One end is connected; M 1 gate and M 2 gate, capacitor C The other end is connected and connected to port B of the circuit; M 3 gate and capacitor C One end is connected, M 3 substrate and M 3 gate connection, M 3 Connect either the source or drain terminal to port A of the circuit. M 3 The other end of the source and drain is connected to port B of the circuit; when a sinusoidal voltage signal is applied to the two ends of the memristor circuit, M 2 and M 1 The capacitors will be switched on alternately to control the conduction. C The charging and discharging of the capacitor changes the capacitor's properties. C The magnitude of the voltage across the terminals; M 3 The gate voltage is determined by the capacitor. C control, M 3 The magnitude of the current will be determined by the capacitor. C The resistance is determined by the voltage across the terminals; the resistance of a memristor circuit is equivalent to the voltage across the circuit and the resistance through which the current flows. M 3 The ratio between the currents.

2. A passive memristor circuit using a MOSFET and a capacitor as described in claim 1, characterized in that: when a sinusoidal AC signal is applied to both ends of the circuit, the positive half-cycle loop of the circuit includes a MOSFET. M 2 , M 3 and capacitors C ;set up v B When it is 0, v A rise, v A and v B The voltage difference between them satisfies the requirements of the MOSFET. M 2 When the conduction condition is met, M 2 When the circuit is turned on, current flows through port A. M 2 Inflow capacitor C In the middle, capacitor C Charging, at this time the capacitor C The voltage across the terminals increases; when v A reduce, v C Greater than v A At that time, capacitor C pass M 2 Discharge to port A, at which time the capacitor C The voltage across the terminals decreases until... M 2 Turn off.

3. A passive memristor circuit using a MOSFET and a capacitor as described in claim 1, characterized in that: when a sinusoidal AC signal is applied to the two ends of the circuit, the negative half-cycle loop of the circuit includes a MOSFET. M 1 , M 3 and capacitors C ;set up v B When it is 0, v A reduce, v A and v B The voltage difference between them satisfies the requirements of the MOSFET. M 1 When the conduction condition is met, M 1 On, capacitor C pass M 1 Discharge to port A, at which time the capacitor C The voltage across the terminals decreases; when v A rise, v C Less than v A At that time, current flows from port A. M 1 Inflow capacitor C In the middle, capacitor C Charging, at this time the capacitor C The voltage across the terminals increases until... M 1 Turn off.

4. A passive memristor circuit using a MOSFET and a capacitor as described in claim 1, wherein the memristor circuit is characterized by: transistors M 3 Its aspect ratio is much larger than that of a transistor. M 1 , M 2 Given the aspect ratio, the resistance of a memristor circuit is equivalent to the voltage across the circuit and the resistance through which the circuit is connected. M 3 The ratio between the currents.

5. A passive memristor circuit using MOSFET and capacitor as described in claim 1, wherein the memristor circuit is characterized in that the memristor formed by the designed circuit is a two-terminal passive device, wherein both port A and port B can be used as input and output ports of the circuit.

6. A passive memristor circuit using MOSFETs and capacitors as described in claim 1, characterized in that: the designed circuit consists only of MOSFETs and capacitors, without the need for any active modules or other types of passive devices.

7. A passive memristor circuit using MOSFETs and capacitors as described in claim 1, wherein the memristor circuit is characterized in that the designed memristor circuit can be applied in logic circuits.

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