Substrate processing method and substrate processing apparatus

Abstract

A substrate processing method includes: a substrate holding step of holding a substrate horizontally using a substrate holding tool; a liquid film forming step of forming a liquid film of a processing liquid on an upper surface of the substrate by supplying the processing liquid to the upper surface of the substrate; a liquid-tight heating step of filling a space between a heater unit provided between the substrate and a susceptor and the substrate with a heat medium by supplying the heat medium to the space, and heating the heat medium by the heater unit; an opening forming step of forming an opening in a central region of the liquid film on the substrate in a state where the substrate is heated by the liquid-tight heating step so that a temperature of the substrate becomes a boiling point or more of the processing liquid; and an opening expanding step of expanding the opening while rotating the substrate about a rotation axis along a vertical direction by rotating the susceptor. The liquid-tight heating step is performed concurrently with at least a part of the opening expanding step.

Description

[0001] This application is a divisional application of the application filed on January 24, 2019, with application number 201910066183X and title "Substrate Processing Method and Substrate Processing Apparatus". Technical Field

[0002] This application claims priority based on Japanese Patent Application No. 2018-15253, filed on January 31, 2018, the entire contents of which are incorporated herein by reference.

[0003] This invention relates to a substrate processing method and a substrate processing apparatus for processing substrates. Substrates that can be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) devices such as organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for optical disc drives, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like. Background Technology

[0004] In substrate processing performed by a single-sheet substrate processing apparatus that processes substrates one by one, for example, a chemical solution is supplied to a substrate held approximately horizontally by a rotating chuck. Then, a rinsing liquid is supplied to the substrate, thereby replacing the chemical solution on the substrate with the rinsing liquid. Then, a rotary drying process is performed to remove the rinsing liquid from the substrate.

[0005] like Figure 10 As shown, when a pattern is formed on the surface of a substrate, the rinsing liquid that has penetrated into the pattern may not be removed during the spin drying process. This can lead to poor substrate drying. Because the liquid surface (air-liquid interface) of the rinsing liquid that has penetrated the pattern is formed inside the pattern, the surface tension of the liquid acts on the contact point between the liquid surface and the pattern. When this surface tension is high, pattern collapse is likely to occur. Since water, a typical rinsing liquid, has a high surface tension, pattern collapse during the spin drying process cannot be ignored.

[0006] Therefore, a method is proposed to supply isopropyl alcohol (IPA), an organic solvent with a surface tension lower than that of water. By treating the upper surface of the substrate with IPA, water that has entered the pattern is replaced by IPA. Then, the upper surface of the substrate is dried by removing the IPA.

[0007] However, in recent years, fine, high-aspect-ratio micro-patterns (columnar patterns, linear patterns, etc.) have been formed on the surface of substrates to achieve high integration. These fine, high-aspect-ratio micro-patterns are prone to collapse. Therefore, after forming an IPA liquid film on the upper surface of the substrate, it is necessary to shorten the time that surface tension acts on the micro-patterns.

[0008] Therefore, U.S. Patent Application No. 2016 / 214148 discloses a substrate processing method that uses a heater to heat the substrate. By heating the substrate with the heater, a vapor layer of IPA is formed between a liquid film of IPA and the upper surface of the substrate. As a result, the interior of the fine pattern is filled with the vapor phase of IPA. In this state, nitrogen gas is blown into the center of the liquid film, forming an opening in the center of the liquid film. By expanding this opening, IPA is discharged from the substrate. In this method, because the interior of the fine pattern is filled with the vapor phase of IPA, the time for surface tension to act on the fine pattern is shortened compared to methods that allow the IPA inside the fine pattern to slowly evaporate from above.

[0009] However, in the substrate processing method described in U.S. Patent Application No. 2016 / 214148, in order to heat the substrate to the temperature at which the vapor layer of the IPA is formed, the substrate is supported by a heater so that the lower surface of the substrate is in contact with the heater. In this state, since the substrate is separated from the rotating chuck, it cannot be rotated. Therefore, according to the substrate processing method described in U.S. Patent Application No. 2016 / 214148, since centrifugal force cannot be applied to the liquid film, the opening of the liquid film is expanded only by the blowing force of nitrogen gas. However, in this case, the blowing of nitrogen gas will cool the substrate, and it is possible that the IPA cannot be maintained as a vapor layer when the opening expands. Summary of the Invention

[0010] Therefore, one object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of maintaining a vapor layer between a liquid film of a processing liquid and the upper surface of a substrate while expanding an opening formed in the liquid film.

[0011] One embodiment of the present invention provides a substrate processing method, characterized in that the substrate processing method includes: a substrate holding step, wherein a substrate is held using a substrate holding device disposed on the upper surface of a base and the substrate is held horizontally at intervals from the upper surface of the base; a liquid film forming step, wherein a liquid film of the processing liquid is formed on the upper surface of the substrate by supplying a processing liquid to the upper surface of the substrate; a liquid-tight heating step, wherein a heat medium is supplied to the space between the substrate and the base and the space between the substrate to fill the space with the heat medium, and the heat medium is heated using the heater unit; an opening forming step, wherein an opening is formed in the central region of the liquid film on the substrate while the substrate is heated by the liquid-tight heating step to a temperature above the boiling point of the processing liquid; and an opening widening step, wherein the opening is widened while the substrate is rotated about a rotation axis along the vertical direction by rotating the base, and the liquid-tight heating step is performed in parallel with the opening widening step for at least a portion of the period.

[0012] According to this method, in the liquid-tight heating process, a heating medium filling the space between the heating unit and the substrate is heated by a heating unit, and the substrate is heated by the heating medium filling the space. Therefore, while the substrate is held by a substrate holding device provided on a base, the substrate can be heated by the heating unit via the heating medium. Thus, the substrate can be sufficiently heated while the base is rotated, thereby rotating the substrate.

[0013] When an opening is formed in the liquid film, the substrate is heated above the boiling point of the processing liquid, causing partial vaporization near the upper surface of the substrate in the liquid film, thus creating a vapor layer between the liquid film and the upper surface of the substrate. Then, during the opening expansion, a liquid-tight heating process is performed for at least a portion of its duration. Therefore, it is possible to suppress the temperature drop of the substrate and allow the opening to expand. Thus, it is possible to expand the opening while maintaining the vapor layer in place.

[0014] It should be noted that although the liquid-tight heating process is performed in parallel with at least a portion of the opening expansion process, this means that, in the opening expansion process, there may be periods during which the liquid-tight heating process is not performed, as long as the gas phase layer can be maintained.

[0015] In one embodiment of the present invention, the liquid-tight heating process includes a rotational supply process in which the heat transfer medium is supplied to the space while the substrate is rotated. Therefore, centrifugal force acts on the heat transfer medium supplied to the space between the substrate and the heater unit. This allows the heat transfer medium to permeate the entire space.

[0016] In one embodiment of the invention, the liquid-tight heating process continues at least until the periphery of the opening reaches the outer peripheral region of the upper surface of the substrate. Therefore, during the opening enlargement process, the vapor layer can be more easily maintained.

[0017] After the periphery of the opening reaches the outer peripheral region of the upper surface of the substrate, the liquid-tight state of the space between the substrate and the heater unit can be released as needed. This allows the drying of the lower surface of the substrate to be performed in parallel with the drying of the upper surface. Therefore, the time required for substrate processing can be shortened.

[0018] In one embodiment of the present invention, the substrate processing method further includes a heat medium supply stopping step, which stops the supply of the heat medium after the space is filled with the heat medium and before the opening forming step begins.

[0019] According to this method, after the space between the heater unit and the substrate is filled with heat medium, and before the opening formation process begins, the heat medium in this space cannot be replaced. Therefore, during the period from when the supply of heat medium to this space stops until the opening formation process begins, the temperature of the heat medium in this space is sufficiently raised by the heat transferred from the heater unit. Therefore, the vapor layer can be more easily maintained during the opening formation process.

[0020] In one embodiment of the present invention, the substrate processing method further includes a heat medium replacement step in which the heat medium located in the space is replaced by supplying the heat medium to a position between the central region of the lower surface of the substrate and the heater unit during the opening enlargement step.

[0021] The heat transfer medium located in the peripheral area of ​​the lower surface of the substrate and between the heater unit is easily affected by the space outside the substrate and the heater unit, resulting in a temperature drop.

[0022] Therefore, if a heat medium is supplied to the position between the central region of the lower surface of the substrate and the heater unit during the opening expansion process, the portion of the heat medium located in the space between the peripheral region of the lower surface of the substrate and the heater unit can be pushed out of the space by the heat medium on the inside side of the portion between the peripheral region of the lower surface of the substrate and the heater unit. Thus, the portion of the heat medium located in the space between the peripheral region of the lower surface of the substrate and the heater unit is replaced by the inner heat medium, which is less affected by the outside of the space. Therefore, it is easier to maintain the temperature near the periphery of the substrate above the boiling point of the processing liquid until the opening expansion process is completed.

[0023] In one embodiment of the present invention, the substrate processing method further includes: a heat medium supply stopping step, wherein the supply of the heat medium is stopped after the space is filled with the heat medium and before the opening forming step begins; and a heat medium replacement step, wherein, during the opening enlargement step, the heat medium located in the space is replaced by supplying the heat medium to a position between the central region of the lower surface of the substrate and the heater unit. Furthermore, the supply flow rate of the heat medium in the heat medium replacement step is less than the supply flow rate of the heat medium before the heat medium supply stopping step.

[0024] According to this method, after the space between the heater unit and the substrate is filled with heat medium, and before the opening formation process begins, the heat medium in this space is not replaced. Therefore, from the time the supply of heat medium to this space stops until the opening formation process begins, the temperature of the heat medium in this space is sufficiently raised by the heat transferred from the heater unit. Therefore, the vapor layer can be more easily maintained during the opening formation process.

[0025] Furthermore, if a heat medium is supplied to the location between the central region of the lower surface of the substrate and the heater unit during the opening expansion process, the portion of the heat medium located between the peripheral region of the lower surface of the substrate and the heater unit in the space can be pushed out of the space by the inner heat medium of the portion between the peripheral region of the lower surface of the substrate and the heater unit. Therefore, the portion of the heat medium located between the peripheral region of the lower surface of the substrate and the heater unit in the space is replaced by the inner heat medium, which is less affected by the outside of the space. Thus, it is easier to maintain the temperature near the periphery of the substrate above the boiling point of the processing liquid until the opening expansion process is completed.

[0026] Furthermore, the flow rate of the heat medium is relatively large before the heat medium supply stops. Therefore, the time required to raise the substrate temperature above the boiling point of the processing liquid through the liquid-tight heating process can be shortened.

[0027] On the other hand, the flow rate of the heat medium is relatively small when replacing the heat medium located between the substrate and the heater unit. Therefore, the time required for the heat medium supplied to the portion between the central region of the lower surface of the substrate and the heater unit in the space to move to the portion between the peripheral region of the lower surface of the substrate and the heater unit in the space can be extended. Therefore, the heat medium supplied to the portion between the central region of the lower surface of the substrate and the heater unit in the space is more fully heated by the heater unit during the period when it moves to the portion between the peripheral region of the lower surface of the substrate and the heater unit in the space.

[0028] In one embodiment of the present invention, the opening forming step includes a step of positioning the heater unit at a first position close to the substrate. Furthermore, the heat transfer medium replacement step includes a step of positioning the heater unit at a second position further away from the substrate than the first position.

[0029] According to this method, in the opening formation process, the heater unit is positioned at a first position. Therefore, the space between the substrate and the heater unit is relatively narrow. This reduces the time required to bring the space to a liquid-tight state. On the other hand, in the heat transfer fluid replacement process, the heater unit is positioned at a second position further away from the substrate than the first position. Therefore, the space between the substrate and the heater unit is relatively wide. This reduces the amount of heat transfer fluid replaced per unit time by the supply of heat transfer fluid. This prevents a sharp drop in the temperature of the heat transfer fluid in the space caused by the supply of heat transfer fluid.

[0030] In one embodiment of the present invention, the opening-forming step includes forming the opening by supplying gas to the central region of the liquid film. Therefore, an opening can be rapidly formed in the central region of the liquid film.

[0031] In one embodiment of the present invention, the opening enlargement process includes a treatment liquid aspiration process in which the treatment liquid constituting the liquid film is aspirated by a suction nozzle.

[0032] According to this method, the opening is enlarged by drawing in the processing liquid through a suction nozzle. Therefore, the time required to perform the opening enlargement process can be shortened. Furthermore, the time required for substrate processing can be reduced.

[0033] In one embodiment of the present invention, the substrate processing method includes: a rinsing fluid supply step, supplying a rinsing fluid for rinsing the upper surface of the substrate; and a replacement step, replacing the rinsing fluid with a low surface tension liquid, which is the processing fluid and has a surface tension lower than that of the rinsing fluid, by supplying the processing fluid to the upper surface of the substrate. Furthermore, the liquid film formation step includes a step of forming a liquid film of the low surface tension liquid as the liquid film on the upper surface of the substrate.

[0034] Therefore, by removing a liquid film of a low-surface-tension liquid (with a surface tension lower than that of the rinsing liquid) from the substrate, the upper surface of the substrate can be dried. This further reduces the surface tension acting on the upper surface of the substrate when the liquid film is removed from the substrate.

[0035] One embodiment of the present invention provides a substrate processing apparatus, characterized in that the substrate processing apparatus comprises: a substrate holding device disposed on the upper surface of a base and horizontally spaced upward from the upper surface of the base; a processing liquid supply unit for supplying processing liquid to the upper surface of the substrate; a heater unit disposed between the substrate and the base; a heat medium supply unit for supplying heat medium to the space between the substrate and the heater unit; an opening forming unit for forming an opening in the central region of a liquid film of the processing liquid formed on the upper surface of the substrate; a substrate rotation unit for rotating the base to rotate the substrate about a rotation axis in the vertical direction; and a controller for controlling the processing liquid supply unit, the heater unit, the heat medium supply unit, the opening forming unit, and the substrate rotation unit.

[0036] Furthermore, the controller executes: a liquid film formation process, in which a liquid film of the processing liquid is formed on the upper surface of the substrate held by the substrate holding device by supplying processing liquid from the processing liquid supply unit to the upper surface of the substrate; a liquid-tight heating process, in which the space is filled with heat medium by supplying heat medium from the heat medium supply unit to the space, and the heat medium is heated by the heater unit; an opening formation process, in which the opening is formed on the liquid film by the opening forming unit while the substrate is heated by the liquid-tight heating process to a temperature above the boiling point of the processing liquid; and an opening expansion process, in which the opening is expanded while the substrate is rotated by the substrate rotation unit, wherein the liquid-tight heating process is executed in parallel with the opening expansion process during at least a portion of the opening expansion process.

[0037] According to this structure, in the liquid-tight heating process, the heater unit heats the heat medium that fills the space between the heater unit and the substrate, and the heat medium filling the space heats the substrate. Therefore, with the substrate held by a substrate holding device provided on the base, the heater unit can heat the substrate through the heat medium. Thus, the substrate can be sufficiently heated while rotating the base to rotate it.

[0038] When an opening is formed in the liquid film, the substrate is heated above the boiling point of the processing liquid, causing partial vaporization near the upper surface of the substrate in the liquid film, thus creating a vapor layer between the liquid film and the upper surface of the substrate. Furthermore, a liquid-tight heating process is performed during at least a portion of the opening's expansion. Therefore, it is possible to suppress a drop in substrate temperature and allow the opening to expand. Thus, it is possible to expand the opening while maintaining the vapor layer in place.

[0039] It should be noted that although the liquid-tight heating process is performed in parallel with at least a portion of the opening expansion process, this means that, in the opening expansion process, there may be periods during which the liquid-tight heating process is not performed, as long as the gas phase layer can be maintained.

[0040] In one embodiment of the invention, the controller performs a rotational supply process in the liquid-tight heating process: while rotating the substrate using the substrate rotation unit, the heat medium is supplied from the heat medium supply unit into the space. Therefore, centrifugal force acts on the heat medium supplied to the space between the substrate and the heater unit. This allows the heat medium to permeate the entire space.

[0041] In one embodiment of the invention, the controller causes the liquid-tight heating process to continue at least until the periphery of the opening reaches the outer peripheral region of the upper surface of the substrate. Therefore, during the opening widening process, the vapor layer can be maintained more easily. Furthermore, after the periphery of the opening reaches the outer peripheral region of the upper surface of the substrate, the liquid-tight state of the space between the substrate and the heater unit can be released as needed. This allows the drying of the lower surface of the substrate to be performed in parallel with the drying of the upper surface of the substrate. Therefore, the time required for substrate processing can be shortened.

[0042] In one embodiment of the present invention, the controller performs a heat medium supply stop process by stopping the supply of heat medium from the heat medium supply unit after the space is filled with the heat medium and before the opening forming process begins.

[0043] According to this structure, after the space between the heater unit and the substrate is filled with heat medium, and before the opening formation process begins, the heat medium in this space cannot be replaced. Therefore, during the period from when the supply of heat medium to this space stops until the opening formation process begins, the temperature of the heat medium in this space is sufficiently raised by the heat transferred from the heater unit. Therefore, the vapor layer can be more easily maintained during the opening formation process.

[0044] In one embodiment of the present invention, the controller performs a heat medium replacement process in which the heat medium located in the space is replaced by supplying the heat medium from the heat medium supply unit to a position between the central region of the lower surface of the substrate and the heater unit during the opening expansion process.

[0045] The heat transfer medium located in the peripheral area of ​​the lower surface of the substrate and between the heater unit is easily affected by the space outside the substrate and the heater unit, resulting in a temperature drop.

[0046] Therefore, if a heat medium is supplied to the position between the central region of the lower surface of the substrate and the heater unit during the opening expansion process, the portion of the heat medium located in the space between the peripheral region of the lower surface of the substrate and the heater unit can be pushed out of the space by the heat medium on the inside of the portion between the peripheral region of the lower surface of the substrate and the heater unit. Thus, the heat medium in the portion between the peripheral region of the lower surface of the substrate and the heater unit is replaced by the inner heat medium, which is less affected by the outside of the space. Therefore, it is easier to maintain the temperature near the periphery of the substrate above the boiling point of the processing liquid until the opening expansion process is completed.

[0047] In one embodiment of the present invention, the controller executes: a heat medium supply stop step, wherein after the space is filled with the heat medium and before the opening formation step begins, the supply of heat medium from the heat medium supply unit is stopped; and a heat medium replacement step, wherein during the opening expansion step, the heat medium located in the space is replaced by supplying heat medium from the heat medium supply unit to a position between the central region of the substrate and the heater unit in the space filled with the heat medium. Furthermore, the supply flow rate of the heat medium during the heat medium replacement step is less than the supply flow rate of the heat medium before the heat medium supply stop step.

[0048] According to this structure, after the space between the heater unit and the substrate is filled with the heat medium, and before the opening formation process begins, the heat medium in this space is not replaced. Therefore, from the time the supply of heat medium to this space stops until the opening formation process begins, the temperature of the heat medium in this space is sufficiently raised by the heat conducted from the heater unit. Therefore, the vapor layer can be more easily maintained during the opening formation process.

[0049] Furthermore, if a heat medium is supplied to the location between the central region of the lower surface of the substrate and the heater unit during the opening expansion process, the portion of the heat medium located between the peripheral region of the lower surface of the substrate and the heater unit in the space can be pushed out of the space by the inner heat medium of the portion between the peripheral region of the lower surface of the substrate and the heater unit. Therefore, the portion of the heat medium located between the peripheral region of the lower surface of the substrate and the heater unit in the space is replaced by the inner heat medium, which is less affected by the outside of the space. Thus, it is easier to maintain the temperature near the periphery of the substrate above the boiling point of the processing liquid until the opening expansion process is completed.

[0050] Furthermore, the flow rate of the heat medium is relatively large before the heat medium supply stops. Therefore, the time required to raise the substrate temperature above the boiling point of the processing liquid through the liquid-tight heating process can be shortened.

[0051] On the other hand, the flow rate of the heat medium is relatively small when replacing the heat medium located between the substrate and the heater unit. Therefore, the time required for the heat medium supplied to the portion between the central region of the lower surface of the substrate and the heater unit in the space to move to the portion between the peripheral region of the lower surface of the substrate and the heater unit in the space can be extended. Therefore, the heat medium supplied to the portion between the central region of the lower surface of the substrate and the heater unit in the space is more fully heated by the heater unit during the period when it moves to the portion between the peripheral region of the lower surface of the substrate and the heater unit in the space.

[0052] In one embodiment of the present invention, the substrate processing apparatus further includes a heater lifting unit for raising and lowering the heater unit. Furthermore, the controller uses the heater lifting unit to position the heater unit at a first position close to the substrate during the opening formation process, and uses the heater lifting unit to position the heater unit at a second position further away from the substrate than the first position during the heat transfer medium replacement process.

[0053] According to this structure, in the opening formation process, the heater unit is positioned at a first position. Therefore, the space between the substrate and the heater unit is relatively narrow. This reduces the time required to bring the space to a liquid-tight state. On the other hand, in the heat transfer fluid replacement process, the heater unit is positioned at a second position further away from the substrate than the first position. Therefore, the space between the substrate and the heater unit is relatively wide. This reduces the amount of heat transfer fluid replaced per unit time by the supply of heat transfer fluid. This prevents a sharp drop in the temperature of the heat transfer fluid in the space caused by the supply of heat transfer fluid.

[0054] In one embodiment of the present invention, the opening forming unit includes a gas supply unit for supplying gas to a central region of the upper surface of the substrate. The controller performs the process of forming the opening by supplying gas from the gas supply unit to the central region of the liquid film during the opening forming process.

[0055] In one embodiment of the present invention, the substrate processing apparatus further includes a suction nozzle for attracting the processing liquid on the substrate. Furthermore, the controller performs a processing liquid suction step during the opening widening step: the suction nozzle attracts the processing liquid constituting the liquid film.

[0056] According to this structure, the opening is enlarged by drawing in the processing liquid through the nozzle. Therefore, the time required for the opening enlargement process can be shortened. Furthermore, the time required for substrate processing can be reduced.

[0057] In one embodiment of the present invention, the substrate processing apparatus further includes a rinsing liquid supply unit for supplying rinsing liquid to the upper surface of the substrate for rinsing the upper surface of the substrate. Furthermore, the processing liquid supply unit further includes a low surface tension liquid supply unit for supplying a low surface tension liquid with a surface tension lower than that of the rinsing liquid to the upper surface of the substrate.

[0058] Furthermore, the controller performs: a rinsing fluid supply step, supplying the rinsing fluid to the upper surface of the substrate; and a displacement step, replacing the rinsing fluid with the low surface tension liquid by supplying the low surface tension liquid to the upper surface of the substrate, and forming a liquid film of the low surface tension liquid on the upper surface of the substrate in the liquid film formation step.

[0059] Therefore, by removing a liquid film of a low-surface-tension liquid (with a surface tension lower than that of the rinsing liquid) from the substrate, the upper surface of the substrate can be dried. This further reduces the surface tension acting on the upper surface of the substrate when the liquid film is removed from the substrate.

[0060] The above and other objects, features and effects of the present invention will become clear from the description of the embodiments with reference to the accompanying drawings. Attached Figure Description

[0061] Figure 1 This is a schematic top view illustrating the internal layout of the substrate processing apparatus according to the first embodiment of the present invention.

[0062] Figure 2 This is a schematic diagram of the processing unit in the substrate processing apparatus.

[0063] Figure 3 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus.

[0064] Figure 4 This is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus.

[0065] Figure 5 This is a low surface tension liquid treatment used to illustrate the substrate processing. Figure 4 A flowchart of an example of S4).

[0066] Figures 6A to 6G This is a schematic cross-sectional view used to illustrate the low surface tension liquid treatment.

[0067] Figures 7A to 7C This is a schematic cross-sectional view of the periphery of the upper surface of the substrate during the removal of the liquid film from the substrate in the low surface tension liquid treatment.

[0068] Figure 8This is a schematic diagram of the processing unit included in the substrate processing apparatus of the second embodiment.

[0069] Figure 9 This is used to explain the low surface tension liquid treatment in substrate processing performed by the substrate processing apparatus of the second embodiment. Figure 4 A schematic cross-sectional view of S4.

[0070] Figure 10 It is a schematic cross-sectional view used to illustrate the principle of pattern collapse caused by surface tension. Detailed Implementation

[0071] First Implementation Method

[0072] Figure 1 This is a schematic top view illustrating the internal layout of the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is a single-sheet type apparatus for processing substrates W such as silicon wafers one by one. (See reference...) Figure 1 The substrate processing apparatus 1 includes: multiple processing units 2 that process substrates W using processing fluid; a loading stage LP for holding a carrier C, wherein the carrier C is used to hold multiple substrates W processed by the processing units 2; a transport robot IR and CR for transporting substrates W between the loading stage LP and the processing units 2; and a controller 3 for controlling the substrate processing apparatus 1.

[0073] A transfer robot IR transfers substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers substrate W between the transfer robot IR and the processing unit 2. Multiple processing units 2, for example, have the same structure. The processing fluid includes liquids such as pharmaceutical solutions, rinsing solutions, processing fluids (low surface tension liquids), heat transfer media, or gases such as inactive gases, as described later.

[0074] Figure 2 This is a schematic diagram illustrating an example of the structure of the processing unit 2. The processing unit 2 includes a rotary chuck 5, a processing cup 8, a first moving nozzle 15, a second moving nozzle 18, a fixed nozzle 17, a lower surface nozzle 19, and a heater unit 6.

[0075] The rotary chuck 5 holds the substrate W horizontally while rotating around a vertical rotation axis A1 that passes through the center of the substrate W. The rotary chuck 5 is included in a substrate holding unit that holds the substrate W horizontally. The substrate holding unit is also called a substrate holder. The rotary chuck 5 has multiple chuck pins 20, a rotating base 21, a rotating shaft 22, and an electric motor 23.

[0076] The rotating base 21 has a circular plate shape in the horizontal direction. On the upper surface of the rotating base 21, a plurality of chuck pins 20 are arranged at intervals in the circumferential direction. The plurality of chuck pins 20 are provided on the upper surface of the base (rotating base 21), and the plurality of chuck pins 20 are included in a substrate holding device that holds the substrate W horizontally from the upper surface of the base upward at intervals.

[0077] The plurality of chuck pins 20 can be opened and closed between a closed state in which they contact and hold the substrate W at its periphery and an open state in which they retract from the periphery of the substrate W. Furthermore, in the open state, the plurality of chuck pins 20 separate from the periphery of the substrate W and release their grip, while on the other hand, the plurality of chuck pins 20 contact the lower surface of the periphery of the substrate W to support the substrate W from below.

[0078] The processing unit 2 also includes a chuck pin drive unit 25 that drives the opening and closing of a plurality of chuck pins 20. The chuck pin drive unit 25 includes, for example, a linkage mechanism 27 built into the rotating base 21 and a drive source 28 disposed outside the rotating base 21. The drive source 28 includes, for example, a ball screw mechanism and an electric motor that applies driving force to the ball screw mechanism.

[0079] The rotating shaft 22 extends vertically along the rotation axis A1. The upper end of the rotating shaft 22 is joined to the center of the lower surface of the rotating base 21. Viewed from above, a through hole 21a is formed in the central region of the rotating base 21, penetrating vertically through the rotating base 21. The through hole 21a communicates with the internal space 22a of the rotating shaft 22.

[0080] An electric motor 23 applies a rotational force to the rotating shaft 22. The electric motor 23 rotates the rotating shaft 22, thereby rotating the rotating base 21. As a result, the substrate W rotates about the rotation axis A1. Hereinafter, the radial inner side centered on the rotation axis A1 will be simply referred to as the "radial inner side," and the radial outer side centered on the rotation axis A1 will be simply referred to as the "radial outer side." The electric motor 23 is included in a substrate rotation unit that rotates the base (rotating base 21) to cause the substrate W to rotate about the rotation axis A1.

[0081] The processing cup 8 has multiple baffles 11 for receiving liquid that splashes outward from the substrate W held by the rotating chuck 5, multiple cups 12 for receiving liquid that is guided downward by the multiple baffles 11, and a cylindrical outer wall member 13 surrounding the multiple baffles 11 and the multiple cups 12. In this embodiment, an example is shown with two baffles 11 (first baffle 11A and second baffle 11B) and two cups 12 (first cup 12A and second cup 12B).

[0082] The first cup 12A and the second cup 12B each have an upwardly opening, groove-like shape. A first baffle 11A surrounds the rotating base 21. The second baffle 11B surrounds the rotating base 21 at a position radially outward compared to the first baffle 11A. The first cup 12A receives liquid guided downward by the first baffle 11A. The second cup 12B is integrally formed with the first baffle 11A and receives liquid guided downward by the second baffle 11B.

[0083] Refer again Figure 1 The processing cup 8 is housed within the chamber 4. An inlet / outlet (not shown) is formed within the chamber 4 for moving the substrate W into or out of the chamber 4. A gate unit (not shown) is provided within the chamber 4 for opening and closing the inlet / outlet.

[0084] Refer again Figure 2 The first movable nozzle 15 is included in a liquid supply unit for supplying (ejecting) liquid medicine to the upper surface of the substrate W. The liquid medicine ejected from the first movable nozzle 15 is, for example, hydrofluoric acid. However, the liquid medicine ejected from the first movable nozzle 15 is not limited to hydrofluoric acid.

[0085] That is, the liquid sprayed from the first movable nozzle 15 can be a liquid containing at least one of the following: sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia, hydrogen peroxide, organic acid (e.g., citric acid, oxalic acid, etc.), organic base (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactant, and preservative. Examples of liquids formed by mixing these liquids include SPM (sulfuric acid / hydrogen peroxide mixture) and SC1 (ammonia-hydrogen peroxide mixture).

[0086] The first movable nozzle 15 is connected to the liquid medicine piping 40 that guides the liquid medicine. When the liquid medicine valve 50 installed on the liquid medicine piping 40 is opened, the liquid medicine is continuously sprayed downward from the first movable nozzle 15.

[0087] The first nozzle moving unit 31 moves the first moving nozzle 15 in both the horizontal and vertical directions. The first moving nozzle 15 can move between a central position and an original position (retracted position). When in the central position, the first moving nozzle 15 faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W refers to the intersection point on the upper surface of the substrate W that intersects with the rotation axis A1. When in the original position, the first moving nozzle 15 does not face the upper surface of the substrate W, but is located outside the processing cup 8 when viewed from above. The first moving nozzle 15 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.

[0088] The first nozzle moving unit 31, for example, includes a vertically oriented rotating shaft, an arm connected to the rotating shaft and extending horizontally, and a rotating shaft drive unit that raises, lowers, and rotates the rotating shaft. The rotating shaft drive unit causes the arm to swing by rotating the rotating shaft about a vertical axis of rotation. Furthermore, the rotating shaft drive unit causes the arm to move up and down by raising and lowering the rotating shaft vertically. The first moving nozzle 15 is fixed to the arm. The first moving nozzle 15 moves horizontally and vertically as the arm swings and rises and falls.

[0089] The fixed nozzle 17 is included in a rinsing fluid supply unit that supplies (ejects) rinsing fluid to the upper surface of the substrate W. The rinsing fluid is, for example, DIW. In addition to DIW, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, ammonia water, and hydrochloric acid water with a dilution concentration (e.g., about 10 ppm to 100 ppm) can also be used as rinsing fluid.

[0090] In this embodiment, the fixed nozzle 17 is connected to the DIW piping 42 that guides the DIW. When the DIW valve 52 installed on the DIW piping 42 is opened, DIW is continuously sprayed downwards from the outlet of the fixed nozzle 17.

[0091] The second movable nozzle 18 has the functions of a low surface tension liquid supply unit (processing liquid supply unit) for supplying (ejecting) low surface tension liquids (processing liquids) such as IPA to the upper surface of the substrate W, and a gas supply unit for supplying (ejecting) gases such as nitrogen (N2 gas) to the upper surface of the substrate W.

[0092] Low surface tension liquids are liquids with a surface tension lower than that of rinsing fluids such as water. Low surface tension liquids can be made from organic solvents that do not chemically react with the upper surface of the substrate W and the patterns formed on the substrate W (those with poor reactivity).

[0093] More specifically, a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene can be used as a low surface tension liquid. Furthermore, a low surface tension liquid is not necessarily composed of a single component; it can also be a mixture of other components. For example, a low surface tension liquid can be a mixture of IPA solution and pure water, or a mixture of IPA solution and HFE solution.

[0094] Preferably, the gas ejected from the second moving nozzle 18 is an inactive gas. An inactive gas is a gas that is inactive relative to the upper surface and pattern of the substrate W, such as a rare gas like argon, or nitrogen. The gas ejected from the second moving nozzle 18 may also be air.

[0095] The second moving nozzle 18 has a central nozzle outlet 70 that ejects the second treatment liquid in a vertical direction. The second moving nozzle 18 also has a linear flow nozzle outlet 71 that ejects a straight stream of gas in a vertical direction. Furthermore, the second moving nozzle 18 also has a horizontal flow nozzle outlet 72 that ejects gas radially around itself in a horizontal direction. Additionally, the second moving nozzle 18 also has an inclined flow nozzle outlet 73 that ejects gas radially around itself in a downward-sloping direction.

[0096] The gas ejected from the linear jet outlet 71 forms a linear airflow that is perpendicularly injected into the upper surface of the substrate W. The gas ejected from the horizontal jet outlet 72 forms a horizontal airflow that is parallel to and covers the upper surface of the substrate W. The gas ejected from the inclined jet outlet 73 forms an inclined airflow with a conical profile that is injected at an angle relative to the upper surface of the substrate W.

[0097] The second movable nozzle 18 is connected to an IPA pipe 44 and multiple nitrogen pipes 45A, 45B, and 45C. When the IPA valve 54 installed on the IPA pipe 44 is opened, IPA is continuously sprayed downwards from the center outlet 70 of the second movable nozzle 18.

[0098] When the first nitrogen valve 55A, installed on the first nitrogen pipe 45A, is opened, nitrogen gas is continuously sprayed downwards from the linear flow outlet 71 of the second movable nozzle 18. When the second nitrogen valve 55B, installed on the second nitrogen pipe 45B, is opened, nitrogen gas is continuously sprayed horizontally from the horizontal flow outlet 72 of the second movable nozzle 18. When the third nitrogen valve 55C, installed on the third nitrogen pipe 45C, is opened, nitrogen gas is continuously sprayed downwards at an angle from the inclined flow outlet 73 of the second movable nozzle 18.

[0099] A mass flow controller 56 is installed on the first nitrogen pipe 45A to accurately regulate the flow rate of nitrogen flowing within the first nitrogen pipe 45A. The mass flow controller 56 has a flow control valve. Furthermore, a variable flow valve 57B is installed on the second nitrogen pipe 45B to regulate the flow rate of nitrogen flowing within the second nitrogen pipe 45B. Additionally, a variable flow valve 57C is installed on the third nitrogen pipe 45C to regulate the flow rate of nitrogen flowing within the third nitrogen pipe 45C. Furthermore, filters 58A, 58B, and 58C for removing foreign matter are installed on nitrogen pipes 45A, 45B, and 45C, respectively.

[0100] The second nozzle moving unit 33 moves the second moving nozzle 18 in both the horizontal and vertical directions. The second moving nozzle 18 can move between a central position and an original position (retracted position). When in the central position, the second moving nozzle 18 faces the rotation center of the upper surface of the substrate W. When in the original position, the second moving nozzle 18 does not face the upper surface of the substrate W, but is positioned outside the processing cup 8 when viewed from above. The second moving nozzle 18 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving in the vertical direction.

[0101] The second nozzle moving unit 33 has the same structure as the first nozzle moving unit 31. That is, the second nozzle moving unit 33 has, for example, a rotating shaft in the vertical direction, an arm that is connected to the rotating shaft and the second moving nozzle 18 and extends horizontally, and a rotating shaft drive unit that raises, lowers and rotates the rotating shaft.

[0102] The heater unit 6 has the shape of a circular heating plate. The heater unit 6 has an opposing surface 6a facing the lower surface of the substrate W from below.

[0103] The heater unit 6 includes a plate body 60, a plurality of support pins 61, and a heater 62. Viewed from above, the plate body 60 is slightly smaller than the substrate W. The plurality of support pins 61 protrude from the upper surface of the plate body 60. The upper surface of the plate body 60 and the surfaces of the plurality of support pins 61 form an opposing surface 6a. The heater 62 may be a resistor built into the plate body 60. By energizing the heater 62, the opposing surface 6a is heated. Furthermore, power is supplied to the heater 62 from the heater energizing unit 64 via a power supply wire 63.

[0104] The heater unit 6 is disposed between the lower surface of the substrate W held by the chuck pin 20 and the upper surface of the rotating base 21. The processing unit 2 has a heater lifting unit 65 that raises and lowers the heater unit 6 relative to the rotating base 21. The heater lifting unit 65 includes, for example, a ball screw mechanism and an electric motor that applies driving force to the ball screw mechanism.

[0105] The lower surface of heater unit 6 is coupled to a lifting shaft 30 extending vertically along the rotation axis A1. The lifting shaft 30 passes through the hollow rotating shaft 22 and a through hole 21a formed in the center of the rotating base 21. A power wire 63 passes through the interior of the lifting shaft 30. The heater lifting unit 65 can raise and lower the heater unit 6 via the lifting shaft 30, thereby positioning the heater unit 6 in any intermediate position between the lower and upper positions. When the heater unit 6 is in the lower position, the distance between the facing surface 6a and the lower surface of the substrate W is, for example, 15 mm. When the heater unit 6 is in the upper position, the facing surface 6a is in contact with the substrate W. When the heater unit 6 is in the upper position, the substrate W can also be transferred from the chuck pin 20 to the facing surface 6a and supported by the facing surface 6a.

[0106] The lower surface nozzle 19 is included in a heat medium supply unit that supplies heat medium to the space 100 between the lower surface of the substrate W and the opposing surface 6a of the heater unit 6. The lower surface nozzle 19 is inserted through the hollow lifting shaft 30 and passes through the heater unit 6. The upper end of the lower surface nozzle 19 has an outlet 19a facing the rotation center of the lower surface of the substrate W. The rotation center of the lower surface of the substrate W refers to the intersection position on the lower surface of the substrate W that intersects with the rotation axis A1.

[0107] The heat transfer medium is a liquid used to transfer heat to the substrate W. Examples of heat transfer media include warm water. For instance, the warm water used as a heat transfer medium is DIW (distilled water) with a temperature higher than room temperature (5°C to 35°C). The temperature of the warm water used as a heat transfer medium is, for example, 75°C to 80°C. The lower surface nozzle 19 is connected to the warm water piping 43. When the warm water valve 53 installed on the warm water piping 43 is opened, warm water is continuously sprayed from the nozzle outlet 19a of the lower surface nozzle 19 into the central region of the lower surface of the substrate W. The central region of the lower surface of the substrate W refers to a defined area including the rotation center of the lower surface of the substrate W.

[0108] Figure 3 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus 1. The controller 3 has a microcomputer that controls the controlled objects in the substrate processing apparatus 1 according to a predetermined program. More specifically, the controller 3 is configured to have a processor (CPU) 3A and a memory 3B storing the program, and executes various controls for substrate processing by executing the program through the processor 3A.

[0109] Specifically, controller 3 controls the conveying robots IR and CR, electric motor 23, nozzle moving units 31 and 33, heater energizing unit 64, heater lifting unit 65, chuck pin driving unit 25, and valves 50, 52, 53, 54, 55A, 55B, 55C, 56, 57B, and 57C. By controlling valves 50, 52, 53, 54, 55A, 55B, 55C, 56, 57B, and 57C, the ejection of the processing fluid from the corresponding nozzles is controlled.

[0110] Figure 4 This is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1, mainly showing the processing implemented by the controller 3 executing a program.

[0111] For example, such as Figure 4 As shown, the substrate processing performed by the substrate processing apparatus 1 is carried out in the following order: substrate loading (S1), chemical treatment (S2), rinsing treatment (S3), low surface tension liquid treatment (S4), drying treatment (S5), and substrate unloading (S6).

[0112] In the substrate processing, substrate loading (S1) is performed first. During substrate loading (S1), heater unit 6 is in the lower position, and nozzles 15 and 18 are in the retracted position. Unprocessed substrate W is loaded from carrier C into processing unit 2 by transfer robots IR and CR and passed to chuck pin 20 (S1). Then, substrate W is held horizontally by chuck pin 20 of rotary chuck 5 until it is removed by transfer robot CR (substrate holding process).

[0113] Next, after the transport robot CR retracts outside the processing unit 2, the liquid treatment begins (S2). The electric motor 23 rotates the rotating base 21. This causes the horizontally held substrate W to rotate (substrate rotation process). Meanwhile, the first nozzle moving unit 31 positions the first moving nozzle 15 at the liquid treatment position above the substrate W. The liquid treatment position can be the position where the liquid ejected from the first moving nozzle 15 lands on the upper surface of the substrate W at the center of rotation. Then, the liquid valve 50 is opened. This supplies liquid from the first moving nozzle 15 to the upper surface of the rotating substrate W (liquid supply process). The supplied liquid is distributed across the entire upper surface of the substrate W by centrifugal force.

[0114] Next, after a certain period of chemical treatment (S2), the chemical solution on the substrate W is replaced by DIW (rinsing solution), thereby performing a rinsing process to remove the chemical solution from the substrate W (S3).

[0115] Specifically, the liquid rinsing valve 50 is closed, and the DIW valve 52 is opened. This supplies DIW (rinsing liquid supply process) from the fixed nozzle 17 to the upper surface of the rotating substrate W. The supplied DIW is distributed across the entire upper surface of the substrate W by centrifugal force. The liquid rinsing on the substrate W is achieved by this DIW. During this process, the first nozzle moving unit 31 retracts the first moving nozzle 15 from the upper retracted position of the substrate W.

[0116] Next, as will be described in detail later, after a rinsing process (S3) for a certain period of time, a low surface tension liquid treatment (S4) is performed. In the low surface tension liquid treatment (S4), the DIW (rinsing liquid) on the substrate W is replaced by IPA (low surface tension liquid), and then the low surface tension liquid is removed from the substrate W. Figure 5 This is a flowchart illustrating the low surface tension liquid treatment (S4).

[0117] In the low surface tension liquid treatment (S4), firstly, DIW on the substrate W is replaced with IPA by supplying IPA to the upper surface of the substrate W from the second moving nozzle 18 (replacement step T1). Then, by continuing to supply IPA from the second moving nozzle 18, a liquid film of IPA is formed on the substrate W (liquid film formation step T2). Then, by blowing nitrogen gas from the second moving nozzle 18, an opening is formed in the central region of the liquid film of IPA (opening formation step T3). Then, the centrifugal force generated by the rotation of the substrate W takes effect, causing the opening to expand (opening expansion step T4). In the opening expansion step T4, the IPA on the substrate W is finally expelled from the substrate W.

[0118] Then, a drying process (S5) is performed to dry the upper and lower surfaces of the substrate W. Specifically, the electric motor 23 rotates the rotating base 21 at a high speed (e.g., 800 rpm). As a result, a large centrifugal force acts on the IPA on the substrate W, and the IPA on the substrate W is thrown to the surrounding area of ​​the substrate W.

[0119] Then, the transfer robot CR enters the processing unit 2, picks up the processed substrate W from the chuck pin 20 of the rotary chuck 5, and moves it out of the processing unit 2 (S6). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and the transfer robot IR stores the substrate W on the tray C.

[0120] Next, using Figures 6A to 6G Specific instructions for low surface tension liquid treatment (S4). Figures 6A to 6G This is a schematic cross-sectional view used to illustrate the low surface tension liquid treatment (S4).

[0121] Reference Figure 6AFirst, the replacement process T1 is performed. The second nozzle moving unit 33 positions the second moving nozzle 18 at the IPA supply position. When the second moving nozzle 18 is in the IPA supply position, the center outlet 70 of the second moving nozzle 18 faces the rotation center of the upper surface of the substrate W. The DIW valve 52 is then closed to stop the supply of DIW to the upper surface of the substrate W. Then, with the second moving nozzle 18 in the IPA supply position, the IPA valve 54 is opened. As a result, IPA is supplied from the second moving nozzle 18 to the upper surface of the rotating substrate W. The supplied IPA is distributed across the entire upper surface of the substrate W by centrifugal force. Thus, the DIW on the substrate W is replaced by IPA.

[0122] In replacement process T1, electric motor 23 changes the rotation speed of rotating base 21 to a predetermined replacement speed. The replacement speed is, for example, 300 rpm. In replacement process T1, heater lifting unit 65 positions heater unit 6 close to substrate W in a first position without contacting it. When heater unit 6 is in the first position, the facing surface 6a of heater unit 6 is, for example, 2 mm below the lower surface of substrate W. During substrate processing, heater energizing unit 64 supplies power to heater unit 6, maintaining heater unit 6 at a constant temperature (e.g., 180°C to 220°C).

[0123] Reference Figure 6B and Figure 6C Next, the liquid film formation process T2 is performed.

[0124] like Figure 6B As shown, in the liquid film formation process T2, after the DIW on the substrate W is replaced with IPA, IPA is continued to be supplied to the substrate W from the second moving nozzle 18, thereby forming a liquid film 150 of IPA on the substrate W.

[0125] In the liquid film formation process T2, the heater lifting unit 65 maintains the heater unit 6 in the first position. In the liquid film formation process T2, the warm water valve 53 is opened. This initiates the ejection (supply) of warm water as a heat transfer medium from the nozzle outlet 19a of the lower surface nozzle 19 into the space 100 (heat transfer medium supply start process). Since the warm water is supplied to the position between the central region of the lower surface of the substrate W and the opposing surface 6a of the heater unit 6 in the space 100, the warm water ejected from the nozzle outlet 19a of the lower surface nozzle 19 gradually expands radially outward from the portion between the central region of the lower surface of the substrate W and the heater unit 6 (the central portion 101 of the space 100). By continuing to supply warm water, the space 100 is eventually filled with warm water (liquid filling process).

[0126] In the liquid film formation process T2, the electric motor 23 decelerates the rotation of the rotating base 21, changing the rotation speed to a predetermined liquid film holding speed. The liquid film holding speed is, for example, 10 to 50 rpm. In the liquid film formation process T2, the rotation of the rotating base 21 can be decelerated in stages. Specifically, the rotation of the rotating base 21 is decelerated to 50 rpm and maintained at this state for a predetermined time, then decelerated to 10 rpm. While the substrate W is rotating, warm water is supplied to the space 100 (rotation supply process).

[0127] From the start of warm water supply until space 100 is filled with warm water, the lower surface nozzle 19 supplies warm water to space 100 at a first supply flow rate. The first supply flow rate is, for example, 500 cc / min. The warm water supplied to space 100 (warm water filling space 100) is heated by heater unit 6 (liquid-tight heating process). The liquid-tight heating process continues at least until the middle of the opening expansion process T4.

[0128] Reference Figure 6C In the liquid film formation process T2, after space 100 is filled with warm water, the warm water valve 53 is closed. Thus, after space 100 is filled with warm water and before the opening formation process T3 begins, the supply of warm water to space 100 is stopped (heat medium supply stop process). Since the supply of heat medium is stopped, the warm water in space 100 is not replaced. Therefore, when the supply of warm water to space 100 is stopped, the heat transferred from heater unit 6 causes the temperature of the warm water filling space 100 to rise.

[0129] Then, the IPA valve 54 is closed. This stops the supply of IPA from the second moving nozzle 18 to the upper surface of the substrate W. As a result, the liquid film 150 of IPA is supported on the substrate W in a puddle state.

[0130] The substrate W receives heat from the heater unit 6 via warm water filling the space 100, thereby being heated to a temperature above the boiling point of IPA (82.4°C). The liquid film 150 on the substrate W is heated by the substrate W. As a result, IPA evaporates at the interface between the liquid film 150 and the upper surface of the substrate W. As a result, a vapor layer composed of IPA gas is generated between the upper surface of the substrate W and the liquid film 150. Therefore, the entire upper surface of the substrate W is in a state where the liquid film 150 is supported on the vapor layer.

[0131] Next, the opening forming process T3 and the opening enlargement process T4 are performed.

[0132] Reference Figure 6DAfter heating the substrate W through a liquid-tight heating process to a temperature above the boiling point of the IPA, the opening formation process T3 is performed. Specifically, the second nozzle moving unit 33 positions the second moving nozzle 18 in the gas supply position. When the second moving nozzle 18 is in the gas supply position, the linear flow outlet 71 of the second moving nozzle 18 faces the rotation center of the upper surface of the substrate W. When the second moving nozzle 18 reaches the gas supply position, the first nitrogen valve 55A is opened. As a result, gas is ejected (supplied) from the linear flow outlet 71 of the second moving nozzle 18.

[0133] The linear airflow formed by the gas ejected from the linear jet nozzle 71 pushes the IPA in the central region of the liquid film 150 radially outward. This rapidly forms an opening 151 in the liquid film 150. Thus, the second moving nozzle 18 functions as an opening-forming unit for forming the opening 151 in the central region of the liquid film 150. During the opening-forming process T3, the heater lifting unit 65 holds the heater unit 6 in a first position.

[0134] Reference Figure 6E and Figure 6F The opening enlargement process T4 is performed by expanding the opening 151 toward the outer periphery of the substrate W and moving the liquid film 150 on the vapor layer.

[0135] like Figure 6E As shown, in the opening widening process T4, the electric motor 23 decelerates the rotation of the rotating base 21, changing the rotation speed to a predetermined first widening speed. The first widening speed is, for example, 10 rpm to 50 rpm. Due to the centrifugal force generated by the rotation of the substrate W, the IPA on the substrate W is discharged outward from the substrate W in an open-ended state.

[0136] In the opening enlargement process T4, the heater lifting unit 65 lowers the heater unit 6 from a first position to a second position. The second position is a position further away from the substrate W than the first position. When the heater unit 6 is in the second position, the facing surface 6a of the heater unit 6 is separated from the lower surface of the substrate W by, for example, 4 mm.

[0137] Then, the warm water valve 53 is opened. This supplies warm water, which serves as the heat transfer medium, into the space 100 between the lower surface of the substrate W and the opposing surface 6a of the heater unit 6. Warm water is again sprayed (supplied) from the nozzle 19a of the lower surface nozzle 19 into the portion (central portion 101) between the central region of the lower surface of the substrate W and the opposing surface 6a of the heater unit 6 in the space 100. By supplying new warm water to the central portion 101, the warm water in the portion (peripheral portion 102) between the peripheral region of the lower surface of the substrate W and the opposing surface 6a of the heater unit 6 in the space 100 is pushed out of the space 100. Thus, by continuing to supply new warm water to the central portion 101, the warm water in the space 100 is replaced with new warm water (heat transfer medium replacement process). The peripheral region of the lower surface of the substrate W refers to the region on the lower surface of the substrate W that includes the peripheral portion of the substrate W. During the heat transfer medium replacement process, the heater unit 6 is positioned in the second position.

[0138] During the heat transfer fluid replacement process, the lower surface nozzle 19 supplies warm water to the space 100 at a second supply flow rate, which is smaller than the first supply flow rate. The second supply flow rate is, for example, 100 cc / min. Therefore, the supply flow rate of warm water during the heat transfer fluid replacement process is less than the supply flow rate of warm water before the heat transfer fluid supply stop process. Warm water is supplied to the space 100 while the substrate W is rotated.

[0139] In substrate processing where the liquid film 150 is pushed outward from the substrate W by centrifugal force, when the periphery 151a of the opening 151 approaches the peripheral region of the upper surface of the substrate W, the force by which the IPA located radially inward from the peripheral region of the upper surface of the substrate W pushes the IPA located in the peripheral region of the upper surface of the substrate W outward decreases. Therefore, it becomes difficult to push the IPA in the peripheral region of the upper surface of the substrate W outward from the substrate W. The peripheral region of the upper surface of the substrate W refers to the area near the peripheral portion of the substrate W on the upper surface of the substrate W.

[0140] Therefore, as Figure 6F As shown, when the opening 151 expands to the point that its periphery 151a reaches the peripheral region of the upper surface of the substrate W, the electric motor 23 accelerates the rotation of the rotating base 21, changing the rotation speed to a predetermined second expansion speed. This second expansion speed is, for example, 50 rpm to 100 rpm. This allows IPA to be removed from the substrate W.

[0141] like Figure 6GAs shown, after the liquid film 150 is removed from the substrate W, the warm water valve 53 is closed. Furthermore, the heater lifting unit 65 lowers the heater unit 6 from the second position to the lower position. This releases the liquid-tight state of the space 100. In other words, in this substrate processing, the liquid-tight heating process is continuously performed from the middle of the liquid film formation process T2 until the end of the opening expansion process T4. Since the substrate W continues to rotate even after the heater unit 6 reaches the lower position, the warm water adhering to the lower surface of the substrate W is expelled by centrifugal force.

[0142] At this time, the first nitrogen valve 55A and the third nitrogen valve 55C can be opened to spray nitrogen gas from the second moving nozzle 18. Specifically, the nitrogen gas sprayed from the linear flow outlet 71 of the second moving nozzle 18 forms a linear airflow, while the nitrogen gas sprayed from the inclined flow outlet 73 of the second moving nozzle 18 forms an inclined airflow. The linear airflow and the inclined airflow are blown toward the upper surface of the substrate W, causing the liquid components remaining on the substrate W to evaporate.

[0143] Next, as described above, a drying process (S5) is performed, and then the substrate W is removed from the processing unit 2. Thus, the substrate processing performed by the substrate processing apparatus 1 is completed.

[0144] Figure 7A and Figure 7B This is a schematic cross-sectional view illustrating the formation of the vapor layer 152 on the surface of substrate W. Fine patterns 161 are formed on the surface of substrate W. Patterns 161 include fine, raised structures 162 formed on the surface of substrate W. Structures 162 may include insulating films or conductive films. Furthermore, structures 162 may be a stacked film composed of multiple layers. When linear structures 162 are adjacent, grooves are formed between them. In this case, the width W1 of structures 162 may be approximately 10 nm to 45 nm, and the spacing W2 between structures 162 may be approximately 10 nm to several μm. The height T of structures 162 may, for example, be approximately 50 nm to 5 μm. When structures 162 are cylindrical, holes are formed on their inner sides.

[0145] like Figure 7A As shown, in the liquid film formation process T2, the liquid film 150 formed on the surface of the substrate W fills the interior of the pattern 161 (the space between adjacent structures 162 or the interior space of the cylindrical structure 162).

[0146] When the temperature of the warm water reaches above the boiling point of IPA through a liquid-tight heating process, the IPA in contact with the surface of the substrate W evaporates, generating IPA gas, such as... Figure 7BAs shown, a vapor layer 152 is formed. The vapor layer 152 fills the interior of the pattern 161 and extends further to the outer side of the pattern 161, forming an interface 155 with the liquid film 150 at a position higher than the upper surface 162A of the structure 162. The liquid film 150 is supported on this interface 155. In this state, since the liquid surface of the IPA does not contact the pattern 161, pattern collapse caused by the surface tension of the liquid film 150 will not occur.

[0147] When the IPA evaporates due to heating of the substrate W, the liquid phase of the IPA is instantaneously expelled from the pattern 161. Then, the liquid phase of the IPA is supported on the formed vapor layer 152, isolating the liquid phase of the IPA from the pattern 161. Thus, the vapor layer 152 of the IPA is sandwiched between the upper surface of the pattern 161 (the upper surface 162A of the structure 162) and the liquid film 150, and supports the liquid film 150.

[0148] like Figure 7C As shown, if cracks 153 are generated in the liquid film 150 that floats from the upper surface of the substrate W, they will become the cause of defects such as watermarks after drying. Therefore, in this embodiment, the supply of IPA is stopped after the rotation of the substrate W is slowed down, thereby forming a thick liquid film 150 on the substrate W and avoiding the generation of cracks 153.

[0149] With the liquid film 150 supported on the vapor layer 152, the frictional resistance acting on the liquid film 150 is so small as to be considered zero. Therefore, when a force is applied to the liquid film 150 in a direction parallel to the upper surface of the substrate W, the liquid film 150 can move easily. In this embodiment, an opening 151 can be formed in the center of the liquid film 150, thereby generating IPA flow through the temperature difference at the periphery 101a of the opening 151, which in turn assists in the expansion of the opening 151 by moving the liquid film 150 supported on the vapor layer 152.

[0150] In the first embodiment, warm water (heat medium) is supplied to the space 100 between the heater unit 6 and the substrate W, thereby filling the space 100 with warm water, and the heater unit 6 heats the warm water (liquid-tight heating process). Then, while the substrate W is heated through the liquid-tight heating process to a temperature above the boiling point of IPA (processing liquid, low surface tension liquid), an opening 151 is formed in the central region of the IPA liquid film 150 on the substrate W (opening formation process). Then, the opening 151 is enlarged while the substrate W is rotated (opening enlargement process). Furthermore, the liquid-tight heating process is performed in parallel with the opening enlargement process.

[0151] According to this embodiment, in the liquid-tight heating process, warm water filling the space 100 between the heater unit 6 and the substrate W is heated by the heater unit 6, and the substrate W is heated by the warm water filling the space 100. Therefore, the substrate W can be heated by the heater unit 6 via warm water while the substrate W is held by a plurality of chuck pins 20 provided on the rotating base 21. Therefore, the substrate W can be sufficiently heated while the rotating base 21 is rotated, thereby rotating the substrate W.

[0152] When an opening 151 is formed on the liquid film 150, the substrate W is heated to above the boiling point of the IPA, and therefore the portion of the liquid film 150 near the upper surface of the substrate W is heated to the boiling point of the IPA. As a result, a vapor layer 152 is formed between the liquid film 150 and the upper surface of the substrate W. Then, a liquid-tight heating process is performed as the opening 151 expands. Therefore, it is possible to suppress the temperature drop of the substrate W while simultaneously expanding the opening 151. Thus, it is possible to maintain the presence of the vapor layer 152 while expanding the opening 151.

[0153] In the first embodiment, during the liquid-tight heating process, warm water is supplied to the space 100 while the substrate W is rotated (rotation supply process). Therefore, centrifugal force acts on the warm water supplied to the space 100. As a result, warm water can be distributed throughout the entire space 100.

[0154] In the first embodiment, the liquid-tight heating process continues until the opening expansion process T4 is completed. Therefore, the gas layer 152 can be maintained more reliably during the opening expansion process T4.

[0155] In the first embodiment, the supply of warm water is stopped after the space 100 is filled with warm water and before the opening formation process begins (heat medium supply stop process). Therefore, the heat medium in the space 100 is not replaced after the space 100 between the heater unit 6 and the substrate W is filled with warm water and before the opening formation process begins. Therefore, during the period from the cessation of the supply of warm water to the space 100 until the start of the opening formation process, the temperature of the heat medium in the space 100 rises sufficiently using the heat transferred from the heater unit 6. Therefore, the vapor layer 152 can be maintained more easily during the opening formation process.

[0156] The warm water located between the periphery of the substrate W and the heater unit 6 is easily affected by the outside of the space 100 and its temperature drops. In the first embodiment, when performing the opening expansion process T4, the warm water located in the space 100 is replaced by supplying warm water to the position between the central region of the lower surface of the substrate W and the heater unit 6 (the central part 101 of the space 100) (heat medium replacement process).

[0157] Therefore, if warm water is supplied to the position between the central region of the lower surface of the substrate W and the heater unit during the opening expansion process T4, the warm water located in the peripheral portion 102 of the space 100 can be pushed out of the space 100 by the warm water located in the space 100 that is further inward than the peripheral portion 102. Thus, the heat medium located in the peripheral portion 102 of the space 100 is replaced with warm water located in the space 100 that is less affected by the outside of the space 100 and is further inward than the peripheral portion 102. Therefore, it is easy to maintain the temperature near the periphery of the substrate W above the boiling point of the processing liquid until the opening expansion process T4 is completed.

[0158] Furthermore, the flow rate of the heat medium is relatively large before the heat medium supply is stopped. Therefore, the time required to raise the temperature of the substrate W above the boiling point of the IPA through the liquid-tight heating process can be shortened.

[0159] On the other hand, the flow rate of warm water when replacing the warm water located between the substrate W and the heater unit 6 is relatively small. Therefore, the time required for the warm water supplied to the central portion 101 of the space 100 to move to the peripheral portion 102 of the space 100 can be extended. Therefore, the warm water supplied to the central portion 101 of the space 100 is heated more thoroughly by the heater unit 6 before moving to the peripheral portion 102 of the space 100.

[0160] In the first embodiment, during the opening formation process, the heater unit 6 is positioned at a first location close to the substrate W. Furthermore, during the heat transfer medium replacement process, the heater unit 6 is positioned at a second location further away from the substrate W than the first location.

[0161] According to this method, in the opening formation process T3, the heater unit 6 is positioned at a first position. Therefore, the space 100 is narrower. This reduces the time required to bring the space 100 to a liquid-tight state. On the other hand, in the heat transfer medium replacement process, the heater unit 6 is positioned at a second position further away from the substrate W than at the first position. Therefore, the space 100 is wider. This reduces the amount of warm water replaced per unit time by the supply of warm water. This prevents a sharp drop in the temperature of the warm water in the space 100 caused by the supply of warm water.

[0162] In the first embodiment, a rinsing fluid supply step and a displacement step are performed. In the liquid film formation step, a liquid film 150 of IPA, which is a low surface tension liquid, is formed. Then, by removing the liquid film 150 of IPA (low surface tension liquid) with a surface tension lower than DIW (rinsing fluid) from the substrate W, the upper surface of the substrate W can be dried. Therefore, the surface tension acting on the upper surface of the substrate W when the liquid film 150 is removed from the substrate W can be further reduced.

[0163] Second Implementation Method

[0164] Figure 8 This is a schematic diagram of the processing unit 2P included in the substrate processing apparatus 1P of the second embodiment. Figure 9 This is a schematic cross-sectional view used to illustrate the low surface tension liquid treatment (S4) in the substrate processing performed by the substrate processing apparatus 1P. Figure 8 and Figure 9 In this document, components identical to those described above are marked with the same reference numerals, and their descriptions are omitted.

[0165] The main difference between the processing unit 2P of the second embodiment and the processing unit 2 of the first embodiment is that the processing unit 2P of the second embodiment is provided with a suction nozzle 90.

[0166] A suction nozzle 90 is included in a suction unit for suctioning IPA (processing liquid) on the substrate W. One end of the suction nozzle 90 is connected to a suction tube 91 that guides the IPA. A suction valve 92 is installed on the suction tube 91 to open and close the flow path. The other end of the suction tube 91 is connected to a suction device 93, such as a vacuum pump. With the suction port 90a at the lower end of the suction nozzle 90 in contact with the IPA on the substrate W, the suction valve 92 is opened to begin suctioning the IPA by the suction device 93.

[0167] The nozzle moving unit 95 moves the nozzle 90 in both the horizontal and vertical directions. The nozzle 90 can move between a central position and an original position (retracted position). When in the central position, the nozzle 90 faces the rotation center of the upper surface of the substrate W. When in the original position, the nozzle 90 does not face the upper surface of the substrate W, but is located outside the processing cup 8 when viewed from above. More specifically, by moving in the vertical direction, the nozzle 90 can approach or retract upward from the upper surface of the substrate W.

[0168] The nozzle moving unit 95 has the same structure as the first nozzle moving unit 31. That is, the nozzle moving unit 95 has, for example, a rotating shaft in the vertical direction, an arm that is connected to the rotating shaft and the nozzle 90 and extends horizontally, and a rotating shaft drive unit that raises or lowers or rotates the rotating shaft.

[0169] The suction valve 92, suction device 93, and suction nozzle moving unit 95 are controlled by controller 3 (see reference). Figure 3 ).

[0170] By utilizing the substrate processing apparatus 1P, the same substrate processing as that performed by the substrate processing apparatus 1 can be performed.

[0171] In the substrate processing performed by the substrate processing apparatus 1P, before the opening enlargement process T4 begins, the nozzle moving unit 95 positions the nozzle 90 facing the periphery of the substrate W. Then, as... Figure 9As shown, in the opening enlargement process T4, the suction valve 92 is opened, and the suction device 93 begins to suction. Then, the suction nozzle 90 begins to suction the IPA constituting the liquid film 150 on the substrate W. This assists in the enlargement of the opening 151 on the substrate W (removal of the liquid film 150). Therefore, the time required to perform the opening enlargement process T4 can be shortened. Furthermore, the time required for substrate processing can be shortened.

[0172] In the second embodiment, the opening widening process T4 begins with the suction nozzle 90 positioned facing the periphery of the substrate W. However, during the opening widening process T4, the suction nozzle 90 may also move outward from the substrate W as the opening 151 widens. In this case, the suction nozzle 90 moves while maintaining the position between the periphery 151a of the opening 151 and the periphery of the substrate W.

[0173] The present invention is not limited to the embodiments described above, and can be implemented in other forms.

[0174] In the above embodiment, warm water is supplied to space 100 during the opening expansion step T4. However, unlike the above embodiment, the supply of warm water to space 100 may be stopped during the opening expansion step T4.

[0175] In the above embodiment, the liquid film 150 is removed from the substrate W during the opening expansion process T4. However, the liquid film 150 may not be completely removed at the end of the opening expansion process T4. That is, after the periphery 151a of the opening 151 reaches the outer peripheral region of the upper surface of the substrate W by expanding the opening 151 while rotating the substrate W, the liquid film 150 may be removed from the upper surface of the substrate W using methods other than expanding the opening 151. Examples of methods other than expanding the opening 151 include blowing gas from the second moving nozzle 18 (peripheral liquid film removal process). In this case, a liquid film heating process is also performed during the peripheral liquid film removal process. That is, a liquid-tight heating process can also be performed after the opening expansion process T4.

[0176] In the above embodiments, the liquid-tight heating process continues at least until the opening expansion process T4 ends. However, as long as the vapor layer 152 can be maintained during the period from the formation of the opening 151 on the liquid film 150 to the removal of the liquid film 150 from the substrate W, the liquid-tight heating process can be terminated midway through the opening expansion process T4 as needed. That is, the liquid-tight heating process can be performed in parallel with the opening expansion process T4 for at least a portion of the period.

[0177] Preferably, the liquid-tight heating process continues at least until the periphery 151a of the opening 151 reaches the outer peripheral region of the upper surface of the substrate W. The outer peripheral region of the upper surface of the substrate W is the region between the central region and the peripheral region of the upper surface of the substrate W. By releasing the liquid-tight state of the space 100 when the periphery 151a of the opening 151 reaches the outer peripheral region of the upper surface of the substrate W, the drying of the lower surface of the substrate W can be performed in parallel with the removal of the liquid film 150 (drying of the upper surface of the substrate W). Therefore, the time required for substrate processing can be shortened.

[0178] Furthermore, the above embodiments describe an example of substrate processing in which a liquid film 150 of a low surface tension liquid is formed on a substrate W, and a vapor layer 152 is maintained between the liquid film 150 and the upper surface of the substrate W while removing the liquid film 150 from the substrate W.

[0179] Unlike the embodiments described above, the present invention is also applicable to substrate processing in which a liquid film of a processing liquid other than a low surface tension liquid (e.g., a rinsing liquid such as DIW) is formed on a substrate W, and the liquid film of the processing liquid is removed from the substrate W while maintaining a vapor layer between the liquid film and the upper surface of the substrate W. In the case where the processing liquid is DIW, the step of... Figure 4 Low surface tension liquid treatment (S4). Instead, it is performed in the rinsing process (S3). Figure 5 The process includes the displacement process T1, the liquid film formation process T2, the orifice formation process T3, and the orifice enlargement process T4.

[0180] Furthermore, in the above embodiment, the lower surface nozzle 19 has an outlet 19a facing the rotation center of the lower surface of the substrate W. However, unlike the above embodiment, the lower surface nozzle 19 may also have a plurality of outlets arranged in the rotation radius direction.

[0181] The embodiments of the present invention have been described in detail above, but these are merely specific examples illustrating the technical content of the present invention. The present invention should not be construed as being limited to these specific examples, and the scope of the present invention is defined only by the claims.

Claims

1. A substrate processing method, characterized in that, include: In the substrate holding process, a substrate holding device is used to hold the substrate. The substrate holding device is disposed on the upper surface of the base and holds the substrate horizontally at intervals from the upper surface of the base upwards. In the liquid film formation process, while rotating the base so that the substrate rotates about a rotation axis along the vertical direction, a processing liquid is supplied to the upper surface of the substrate, thereby forming a liquid film of the processing liquid on the upper surface of the substrate. The liquid-tight heating process involves supplying a heat medium to the space between the upper surface of a heater unit disposed between the substrate and the base and the lower surface of the substrate, thereby forming a liquid-tight state in which the heat medium fills the space and contacts both the lower surface of the substrate and the upper surface of the heater unit, and heating the heat medium using the heater unit while maintaining the liquid-tight state. In the liquid film removal process, the liquid film is removed from the upper surface of the substrate after the substrate has been heated to a temperature above the boiling point of the processing liquid through the liquid-tight heating process. The heat medium supply stop process involves stopping the supply of the heat medium after the space is filled with the heat medium and before the liquid film removal process begins. as well as In the full-state formation process, after the heat medium supply process and before the liquid film removal process, the supply of processing liquid to the upper surface of the substrate is stopped, and the rotation of the substrate is reduced to a speed lower than when the processing liquid supply begins, so as to form a full state in which the liquid film is supported on the upper surface of the substrate.

2. The substrate processing method according to claim 1, characterized in that, The substrate processing method further includes a heat medium replacement step, wherein during the liquid film removal step, the heat medium located in the space is replaced by supplying the heat medium to the position between the central region of the lower surface of the substrate and the heater unit.

3. The substrate processing method according to claim 1, characterized in that, The substrate processing method further includes: In the heat transfer medium replacement process, during the liquid film removal process, the heat transfer medium located in the space is replaced by supplying the heat transfer medium to the central region of the lower surface of the substrate and the position between the heater unit. The supply flow rate of the heat medium during the heat medium replacement process is less than the supply flow rate of the heat medium before the heat medium supply stop process is executed.

4. A substrate processing method, characterized in that, include: In the substrate holding process, a substrate holding device is used to hold the substrate. The substrate holding device is disposed on the upper surface of the base and holds the substrate horizontally at intervals from the upper surface of the base upwards. The liquid film formation process involves supplying a processing liquid to the upper surface of the substrate to form a liquid film of the processing liquid on the upper surface of the substrate. The liquid-tight heating process involves supplying a heat medium to the space between the upper surface of a heater unit disposed between the substrate and the base and the lower surface of the substrate, thereby forming a liquid-tight state in which the heat medium fills the space and contacts both the lower surface of the substrate and the upper surface of the heater unit, and heating the heat medium using the heater unit while maintaining the liquid-tight state. In the liquid film removal process, the liquid film is removed from the upper surface of the substrate after the substrate has been heated to a temperature above the boiling point of the processing liquid through the liquid-tight heating process. The heat medium supply stop process involves stopping the supply of the heat medium after the space is filled with the heat medium and before the liquid film removal process begins. as well as In the heat transfer medium replacement process, during the liquid film removal process, the heat transfer medium located in the space is replaced by supplying the heat transfer medium to the central region of the lower surface of the substrate and the position between the heater unit. The supply flow rate of the heat medium during the heat medium replacement process is less than the supply flow rate of the heat medium before the heat medium supply stop process is executed.

5. The substrate processing method according to claim 1 or 4, characterized in that, The liquid-tight heating process includes a rotational supply process in which the heat medium is supplied to the space while the substrate is rotated.

6. The substrate processing method according to claim 1 or 4, characterized in that, The liquid film removal process also includes: An opening-forming process is performed to form an opening in the central region of the liquid film on the substrate; and The opening enlargement process involves expanding the opening by rotating the base to enlarge the substrate. The liquid-tight heating process continues at least until the periphery of the opening reaches the outer peripheral region of the upper surface of the substrate.

7. The substrate processing method according to claim 6, characterized in that, The opening forming process includes the step of forming the opening in the central region of the liquid film on the substrate by supplying gas to the central region of the liquid film.

8. The substrate processing method according to claim 6, characterized in that, The opening enlargement process includes a treatment liquid aspiration process in which the treatment liquid constituting the liquid film is aspirated by a suction nozzle.

9. The substrate processing method according to claim 3 or 4, characterized in that, The liquid film removal process includes the step of positioning the heater unit at a first location close to the substrate. The heat transfer medium replacement process includes the step of positioning the heater unit at a second position further away from the substrate than the first position.

10. The substrate processing method according to claim 1 or 4, characterized in that, The substrate processing method includes: The rinsing fluid supply process involves supplying rinsing fluid to the upper surface of the substrate for rinsing the upper surface of the substrate; and The replacement process involves supplying a low-surface-tension liquid, which is the processing liquid and has a surface tension lower than that of the rinsing liquid, to the upper surface of the substrate, thereby replacing the rinsing liquid with the low-surface-tension liquid. The liquid film forming process includes the process of forming a liquid film of the low surface tension liquid as the liquid film on the upper surface of the substrate.

11. A substrate processing apparatus, characterized in that, have: A substrate holding device is disposed on the upper surface of the base and holds the substrate horizontally spaced upward from the upper surface of the base; The processing liquid supply unit supplies processing liquid to the upper surface of the substrate; A heater unit is disposed between the substrate and the base; A heat medium supply unit supplies heat medium into the space between the lower surface of the substrate and the upper surface of the heater unit; A liquid film removal unit removes a liquid film of the processing liquid formed on the upper surface of the substrate from the upper surface of the substrate; A substrate rotation unit rotates the substrate about a rotation axis along the vertical direction by rotating the base; and The controller controls the processing liquid supply unit, the heater unit, the heat medium supply unit, the liquid film removal unit, and the substrate rotation unit. The controller performs: In the liquid film formation process, while rotating the substrate using the substrate rotation unit, processing liquid is supplied from the processing liquid supply unit to the upper surface of the substrate held by the substrate holding device, thereby forming the liquid film of the processing liquid on the upper surface of the substrate. In the liquid-tight heating process, heat medium is supplied from the heat medium supply unit to the space to form a liquid-tight state in which the space is filled with the heat medium and the heat medium contacts both the lower surface of the substrate and the upper surface of the heater unit. The heat medium is heated by the heater unit while maintaining the liquid-tight state. In the liquid film removal process, the liquid film is removed from the substrate by means of the liquid-tight heating process, where the temperature of the substrate is heated to a state above the boiling point of the processing liquid. The heat medium supply stop process involves stopping the supply of heat medium from the heat medium supply unit after the space is filled with the heat medium and before the liquid film removal process begins. as well as In the full-state formation process, after the heat medium supply process and before the liquid film removal process, the supply of processing liquid from the processing liquid supply unit is stopped, and the rotation of the substrate by the substrate rotation unit is reduced to a speed lower than when the processing liquid supply begins, so as to form a full state in which the liquid film is supported on the upper surface of the substrate.

12. A substrate processing apparatus, characterized in that, have: A substrate holding device is disposed on the upper surface of the base and holds the substrate horizontally spaced upward from the upper surface of the base; The processing liquid supply unit supplies processing liquid to the upper surface of the substrate; A heater unit is disposed between the substrate and the base; A heat medium supply unit supplies heat medium into the space between the lower surface of the substrate and the upper surface of the heater unit; A liquid film removal unit removes a liquid film of the processing liquid formed on the upper surface of the substrate from the upper surface of the substrate; and The controller controls the processing fluid supply unit, the heater unit, the heat medium supply unit, and the liquid film removal unit. The controller performs: The liquid film formation process involves supplying a processing liquid from the processing liquid supply unit to the upper surface of the substrate held by the substrate holding device, thereby forming a liquid film of the processing liquid on the upper surface of the substrate. In the liquid-tight heating process, heat medium is supplied from the heat medium supply unit to the space to form a liquid-tight state in which the space is filled with the heat medium and the heat medium contacts both the lower surface of the substrate and the upper surface of the heater unit. The heat medium is heated by the heater unit while maintaining the liquid-tight state. In the liquid film removal process, after the substrate is heated through the liquid-tight heating process to a temperature above the boiling point of the processing liquid, the liquid film is removed from the upper surface of the substrate using the liquid film removal unit. The heat medium supply stop process involves stopping the supply of heat medium from the heat medium supply unit after the space is filled with the heat medium and before the liquid film removal process begins. as well as In the heat transfer medium replacement process, during the liquid film removal process, the heat transfer medium located in the space is replaced by supplying the heat transfer medium from the heat transfer medium supply unit to a position between the central region of the substrate and the heater unit in the space filled with the heat transfer medium. The supply flow rate of the heat medium during the heat medium replacement process is less than the supply flow rate of the heat medium before the heat medium supply stop process is executed.

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