Semiconductor device and method of controlling the same

Abstract

This disclosure provides a semiconductor device and its control method, relating to the field of semiconductor technology, for solving the technical problem of uneven temperature on wafers. The semiconductor device includes a reaction chamber, an electrostatic chuck, a first adjustment device, and a second adjustment device. The electrostatic chuck is disposed within the reaction chamber and includes an adsorption surface and a non-adsorption surface disposed opposite each other. The adsorption surface is used to adsorb the wafer. The first adjustment device is located on one side of the non-adsorption surface and abuts against it, for adjusting the temperature of the wafer from the back side. The second adjustment device is disposed on the side wall of the reaction chamber and located on one side of the adsorption surface, for adjusting the temperature of the wafer from the front side. This disclosure utilizes the first and second adjustment devices to adjust the temperature of the back and front sides of the wafer respectively, reducing the temperature difference between the central and edge regions of the wafer, thus making the temperature of each region of the wafer more uniform.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor structure manufacturing, and more particularly to a semiconductor device and its control method. Background Technology

[0002] In the semiconductor fabrication process, thin films can be formed on the surface of a wafer using vacuum deposition processes. For example, Physical Vapor Deposition (PVD) is a technique that uses low-voltage, high-current arc discharge under vacuum conditions. This process involves evaporating a target material and ionizing both the evaporated material and the gas. The electric field then accelerates the evaporation, causing the evaporated material and its reaction products to deposit onto the wafer, thus forming a thin film.

[0003] Specifically, when physical vapor deposition is used to form interconnects in an interconnect layer, the interconnects may protrude outward from the surface of the interconnect layer, leading to wire breakage or short circuits between adjacent interconnects, thus reducing the yield of semiconductor structures formed using semiconductor equipment. Summary of the Invention

[0004] In view of the above problems, this disclosure provides a semiconductor device and a control method thereof to improve the yield of semiconductor structures formed using the semiconductor device.

[0005] A first aspect of this disclosure provides a semiconductor device, comprising: a reaction chamber, an electrostatic chuck, a first adjustment device, and a second adjustment device. The electrostatic chuck is disposed within the reaction chamber and includes an adsorption surface and a non-adsorption surface disposed opposite to each other. The adsorption surface is used to adsorb wafers.

[0006] The first adjustment device is located on one side of the non-adsorption surface and abuts against the non-adsorption surface, and is used to adjust the temperature of the wafer from the back side;

[0007] The second adjustment device is disposed on the side wall of the reaction chamber and located on one side of the adsorption surface, and is used to adjust the temperature of the wafer from the front.

[0008] In some embodiments, the first adjustment device includes a plurality of first temperature adjustment sections, which are spaced apart along the direction from the center of the electrostatic chuck to the edge, and each first temperature adjustment section is used to adjust the temperature of the adsorption surface corresponding to it.

[0009] In some embodiments, the first temperature regulating unit includes an annular cooling pipe, and a plurality of the annular cooling pipes are arranged at intervals along the direction from the center of the electrostatic chuck to the edge.

[0010] Along the direction from the center of the electrostatic chuck to the edge, the inner diameters of the plurality of annular cooling tubes decrease sequentially.

[0011] In some embodiments, the second regulating device includes at least two opposingly arranged second temperature regulating units, each of which is configured to inject cooling gas into the reaction chamber;

[0012] Alternatively, the second regulating device includes an annular cooling plate; the annular cooling plate includes a second cavity and a second air inlet and a plurality of spaced-apart second air outlets respectively connected to the second cavity, the second air inlet being used for connecting to a cooling gas source, and the plurality of second air outlets being used for introducing cooling gas into the reaction chamber.

[0013] In some embodiments, at least two second temperature adjustment units are spaced apart along the circumferential direction of the electrostatic chuck, and there is a preset distance between adjacent second temperature adjustment units.

[0014] In some embodiments, each of the second temperature regulating units includes an arc-shaped cooling plate, which is fixedly connected to the reaction chamber.

[0015] The arc-shaped cooling plate includes a first cavity and a first air inlet and a first air outlet respectively connected to the first cavity. The first air inlet is used to connect to a cooling gas source, and the first air outlet is used to introduce cooling gas into the reaction chamber.

[0016] In some embodiments, the number of first air outlets is multiple, and the multiple first air outlets include multiple air outlet groups, and the multiple air outlet groups are spaced apart on the arc-shaped cooling plate along a direction perpendicular to the electrostatic chuck.

[0017] Along the direction from the top of the arc-shaped cooling plate to the bottom of the arc-shaped cooling plate, the number of air outlets in the plurality of air outlet groups decreases sequentially.

[0018] In some embodiments, a first temperature sensor is further included, which is disposed within the reaction chamber and at least near the second temperature regulating unit.

[0019] A second aspect of this disclosure provides a control method for a semiconductor device, the semiconductor device including a first adjustment device, a second adjustment device, and an electrostatic chuck; the electrostatic chuck includes an adsorption surface and a non-adsorption surface disposed opposite to each other, the adsorption surface being used to adsorb wafers; the first adjustment device is located on one side of the non-adsorption surface, wherein the first adjustment device includes a plurality of first temperature adjustment units; the second adjustment device is located on one side of the adsorption surface.

[0020] The control method includes:

[0021] The first temperature of the wafer and the region corresponding to each of the first temperature adjustment sections is obtained, and the plurality of first temperatures form a first temperature set;

[0022] Based on each of the first temperatures and the first preset temperatures in the first temperature set, the operating state of each of the first temperature regulating units of the first regulating device is determined;

[0023] The first regulating device is controlled to execute a preset time according to the working state of each of the first temperature regulating units;

[0024] The second temperature of the wafer corresponding to each of the first temperature adjustment sections is obtained, and the plurality of second temperatures form a second temperature set;

[0025] The operating state of the first regulating device is determined based on the difference between any two second temperatures in the second temperature set and the second preset temperature; if the difference between any two second temperatures is higher than the second preset temperature, the above steps are repeated until the difference between any two second temperatures is lower than the second preset temperature.

[0026] If the difference between any two of the second temperatures is lower than the second preset temperature, the first regulating device is controlled to close, and the second regulating device is controlled to open, for rapid cooling. In some embodiments, the second regulating device includes at least two opposing second temperature regulating units; the steps of controlling the first regulating device to close and the second regulating device to open according to each set of second temperatures include:

[0027] The third temperature of the wafer and the region corresponding to each second temperature adjustment section is obtained, and multiple third temperatures form a third temperature set;

[0028] The operating state of each of the second temperature regulating units is determined based on each of the third temperatures and the third preset temperatures in the third temperature set.

[0029] In the semiconductor device and its fabrication method provided in this disclosure, a first adjustment device and a second adjustment device are provided in the reaction chamber. The first adjustment device is located below the electrostatic chuck and abuts against the non-adsorption surface; the second adjustment device is located above the electrostatic chuck. In this way, the temperature of the back side of the wafer is adjusted by the first adjustment device and the temperature of the front side of the wafer is adjusted by the second adjustment device. This reduces the temperature difference between the central and edge areas of the wafer, making the temperature of each area of ​​the wafer more uniform, thereby improving the yield of the semiconductor structure formed using this semiconductor device.

[0030] In addition to the technical problems solved by the embodiments of this disclosure, the technical features constituting the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions described above, other technical problems that can be solved by the semiconductor devices and control methods provided by the embodiments of this disclosure, other technical features included in the technical solutions, and the beneficial effects brought about by these technical features will be further described in detail in the specific implementation. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 A schematic diagram of the semiconductor structure fabricated for semiconductor devices in related technologies;

[0033] Figure 2 Schematic diagram of the structure of the semiconductor device provided in the embodiments of this disclosure Figure 1 ;

[0034] Figure 3 This is a schematic diagram of the structure of the heating assembly provided in an embodiment of the present disclosure;

[0035] Figure 4 A schematic diagram of the first adjusting device provided in an embodiment of this disclosure;

[0036] Figure 5 A schematic diagram of the second adjustment device provided in an embodiment of this disclosure;

[0037] Figure 6 Schematic diagram of the structure of the semiconductor device provided in the embodiments of this disclosure Figure 2 ;

[0038] Figure 7 A flowchart of a control method for a semiconductor device provided in an embodiment of this disclosure.

[0039] Figure label:

[0040] 1: Interconnect layer; 2: Bump;

[0041] 100: Reaction chamber; 200: Electrostatic chuck; 210: Adsorption surface; 220: Ejector pin mechanism; 230: Heating assembly; 231: Heating tube; 300: First adjustment device; 310: First temperature adjustment unit; 400: Wafer; 500: Second adjustment device; 510: Second temperature adjustment unit; 520: Support; 530: First gas outlet; 540: First gas outlet group; 600: First temperature sensor; 700: Circulation pump. Detailed Implementation

[0042] When performing related processes on wafers using semiconductor processing equipment, an electrostatic chuck (E-Chuck) is typically used to hold the wafer in place within the reaction chamber of the semiconductor processing equipment. Furthermore, the electrostatic chuck usually contains heating elements to heat the wafer, ensuring that the formed film meets the required performance specifications.

[0043] Semiconductor processing equipment can be deposition equipment. When forming interconnect layers 1 on a wafer using deposition equipment, the temperature of the electrostatic chuck is uneven along the center to the edge of the wafer, resulting in uneven temperatures in different areas of the wafer, with some areas having high temperatures and others low temperatures. Please refer to the appendix. Figure 1 In the process of sputtering conductive metal into the contact hole, such as depositing aluminum, the sputtering particles bombard the contact hole and the local temperature of the electrostatic chuck is too high, causing the aluminum film temperature to rise sharply and forming a large local temperature difference. This causes the aluminum film to expand and deform, so that part of the aluminum film is squeezed out to form a sharp protrusion 2 on the surface of the interconnect layer. Subsequently, when other film layers are formed on the interconnect layer, the sharp protrusion 2 will pierce the film layer located on it, which will lead to wire breakage or short circuit between adjacent wires, reducing the yield of the semiconductor structure formed by the semiconductor device.

[0044] To address the aforementioned technical problems, this disclosure provides a semiconductor device and its control method. By providing a first adjustment device and a second adjustment device within the reaction chamber, wherein the first adjustment device is positioned below the electrostatic chuck and abuts against the non-adsorption surface, and the second adjustment device is positioned above the electrostatic chuck, the temperature of the back side of the wafer is adjusted using the first adjustment device, and the temperature of the front side of the wafer is adjusted using the second adjustment device. This reduces the temperature difference between the central and edge regions of the wafer, making the temperature of each region of the wafer more uniform, thereby improving the yield of the semiconductor structure formed using this semiconductor device.

[0045] To make the above-mentioned objects, features, and advantages of the embodiments of this disclosure more apparent and understandable, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0046] Please refer to the attached document. Figure 2 This disclosure provides a semiconductor device that may include a physical vapor deposition (PVD) device. Under vacuum conditions, a low-voltage, high-current arc discharge technique is used to evaporate the target material and ionize both the evaporated material and the gas. The PVD device is then accelerated by an electric field to deposit the evaporated material and its reaction products onto a wafer, thereby forming a thin film.

[0047] The semiconductor device 1000 includes a reaction chamber 100 and an electrostatic chuck 200, the electrostatic chuck 200 being disposed within the reaction chamber 100. The electrostatic chuck 200 includes opposing adsorption surfaces 210 and non-adsorption surfaces for adsorption... Figure 2 Taking the orientation shown as an example, the adsorption surface 210 is the upper surface of the electrostatic chuck 200, the adsorption surface is used for the wafer 400, and the non-adsorption surface is the lower surface of the electrostatic chuck 200. The electrostatic chuck 200 is typically mounted within the reaction chamber 100 via a base. At least three ejector pin mechanisms 220 are also provided within the base. Correspondingly, the electrostatic chuck 200 has through holes to facilitate the insertion of the ejector pin mechanisms 220.

[0048] The application process of the electrostatic chuck 200 is as follows: After the wafer is transferred to the electrostatic chuck by the robotic arm, a positive voltage is applied using the high voltage module (HV Module) and transmitted through the bottom of the base to the high voltage electrode (HV Electrode), and then to the electrostatic chuck to hold the wafer. At this time, at least three ejector pin mechanisms 220 are embedded in the base. Next, a gas (such as helium) is supplied between the wafer and the electrostatic chuck to start processes such as etching, physical vapor deposition (PVD), or chemical vapor deposition (CVD). After the process is completed, the helium is turned off, and a negative voltage is applied by the high voltage module for de-chuck operation. Finally, the ejector pins of the ejector pin mechanism are pushed up so that the top surface of the ejector pin is higher than the electrostatic chuck and lifts the wafer so that the robotic arm can move and transfer the wafer from the electrostatic chuck.

[0049] The semiconductor structure also includes a first adjustment device 300, which is located on one side of the non-adsorption surface and abuts against it. The first adjustment device 300 is located below the wafer and is used to adjust the temperature of the wafer 400 from the back side. That is, the first adjustment device 300 adjusts the temperature of the wafer 400 from the non-adsorption surface.

[0050] The semiconductor structure also includes a second adjustment device 500, which is disposed on the side wall of the reaction chamber 100 and located on one side of the adsorption surface 210, i.e., above the adsorption surface 210. It is used to adjust the temperature of the wafer 400 from the front side, specifically to adjust the temperature of the upper surface of the wafer 400. In this embodiment, the first adjustment device 300 is used to adjust the temperature of the back side of the wafer 400, and the second adjustment device 500 is used to adjust the temperature of the front side of the wafer 400. This reduces the temperature difference between the central and edge regions of the wafer 400, making the temperature of each region of the wafer 400 more uniform, thereby improving the yield of the semiconductor structure formed using this semiconductor device.

[0051] It should be noted that the electrostatic chuck 200 contains a heating element 230, which is used to provide a suitable temperature for the wafer 400. Please refer to the attached diagram for details. Figure 3 The heating assembly 230 includes a plurality of heating tubes 231. Each heating tube 231 is annular, for example, each heating tube 231 is circular. The plurality of heating tubes 231 are spaced apart along the direction from the center of the electrostatic chuck 200 to the edge, for heating different areas of the electrostatic chuck 200.

[0052] Each heating tube 231 contains multiple resistance wires. Power is supplied to the resistance wires to achieve the heating function of the heating assembly 230. The number of resistance wires in each heating tube 231 may be the same or different.

[0053] As an example, along the direction from the center of the electrostatic chuck 200 to the edge, the diameter of the heating tube 231 gradually increases, and the number of resistance wires in the multiple heating tubes 231 also gradually increases. By adjusting the number of resistance wires and the diameter of the heating tube 231, the temperature of different areas can be adjusted.

[0054] The electrostatic chuck 200 is typically circular. Along the direction from the center to the edge, the electrostatic chuck 200 can be divided into multiple annular sub-regions, all with the same inner diameter. Since the area of ​​these annular sub-regions gradually increases along the direction from the center to the edge, the temperature in the central region of the electrostatic chuck 200 will be significantly higher than the temperature in the edge region. Therefore, in this embodiment, the diameter of the heating tube 231 and the number of resistance wires are adjusted along the direction from the center to the edge of the electrostatic chuck 200 to maximize the edge temperature of the electrostatic chuck 200. This makes the edge temperature of the electrostatic chuck 200 more consistent with the center temperature, thereby avoiding a temperature gradient on the wafer 400, facilitating the reduction of thermal stress accumulation on the wafer 400, and improving the yield of the wafer 400.

[0055] In one possible implementation, the first regulating device 300 includes a first temperature regulating section 310, and a plurality of first temperature regulating sections 310 are arranged at intervals along the direction from the center of the electrostatic chuck 200 to the edge, that is, the first temperature regulating section 310 corresponds to the heating tube 231.

[0056] Each first temperature regulating unit 310 is used to regulate the temperature of its corresponding adsorption surface 210. Each first temperature regulating unit 310 regulates the temperature of its corresponding adsorption surface 210 from below the electrostatic chuck 200, and can reasonably adjust the regulating temperature of the first temperature regulating unit 310 according to the temperature difference of its corresponding adsorption surface 210, so as to control the temperature more effectively.

[0057] As an example, each first temperature regulating unit 310 can be a nozzle that sprays cooling gas onto the non-adsorption surface of the electrostatic chuck 200, first cooling the non-adsorption surface, and then cooling the adsorption surface 210 through conduction.

[0058] Please refer to the attached document. Figure 4 As another example, each first temperature regulating unit 310 includes an annular cooling tube. Each annular cooling tube is filled with a cooling medium, which is configured to circulate within the annular cooling tube and exchange heat with the electrostatic chuck 200. The cooling medium may include a heat-conducting gas or a heat-conducting liquid; for example, the cooling medium may include an inert gas or deionized water.

[0059] In this embodiment, multiple annular cooling tubes are arranged sequentially at intervals along the direction from the center of the electrostatic chuck 200 to the edge, and are nested within each other. That is, the multiple annular cooling tubes are concentric rings, and the diameter of the multiple annular cooling tubes gradually increases.

[0060] This embodiment can reasonably adjust whether cooling medium is introduced into each annular cooling pipe and the flow rate of the cooling medium according to the temperature of different areas along the direction from the center to the edge of the electrostatic chuck 200, so as to more effectively regulate the temperature of the electrostatic chuck 200 and make the temperature of each area of ​​the electrostatic chuck 200 more uniform.

[0061] It should be noted that the inner diameters of the multiple annular cooling tubes can be the same or different. As an example, along the direction from the center to the edge of the electrostatic chuck 200, the inner diameters of the multiple annular cooling tubes decrease sequentially.

[0062] Since the area of ​​each sub-region increases along the direction from the center to the edge of the electrostatic chuck 200, the electrostatic chuck 200 will have a phenomenon where the temperature of the central region is high and the temperature of the edge region is low.

[0063] Furthermore, in this embodiment, the inner diameters of the multiple annular cooling tubes decrease sequentially along the direction from the center to the edge of the electrostatic chuck 200. This arrangement reduces the cooling effect of the annular cooling tubes corresponding to the edge region of the electrostatic chuck 200, thereby making the temperature of the electrostatic chuck 200 as uniform as possible.

[0064] When the aforementioned semiconductor equipment is used to fabricate interconnect layers, the temperature of each region of the electrostatic chuck 200 tends to be uniform, and correspondingly, the temperature of each region of the wafer 400 also tends to be uniform. This prevents the aluminum film temperature from rising sharply, thereby avoiding the aluminum film from expanding and deforming to the point that some of the aluminum film is squeezed out, and also avoids the formation of sharp protrusions on the surface of the interconnect layer. This reduces or even avoids wire breakage or short circuits between adjacent wires, and improves the yield of semiconductor structures formed using semiconductor equipment.

[0065] Please continue to refer to the appendix. Figure 2 and attached Figure 5 In one possible implementation, the second regulating device 500 includes at least two second temperature regulating units 510, which are arranged opposite to each other. For example, with an attached... Figure 2 Taking the orientation shown as an example, one of the second temperature adjustment units 510 is located on the left side wall of the reaction chamber 100, and the other second temperature adjustment unit 510 is located on the right side wall of the reaction chamber 100.

[0066] Each second temperature regulating unit 510 is configured to inject cooling gas into the reaction chamber 100. The beneficial effects of the second regulating device 500, assuming it includes two second temperature regulating units 510, will be described in detail below.

[0067] The cooling gas injected by one of the second temperature regulating units 510 is directed towards the other second temperature regulating unit 510. The cooling gases from the two second temperature regulating units 510 collide with each other, forming a convection flow that flows from the periphery of the reaction chamber 100 towards the center of the wafer 400. This increases the flow rate of cooling gas in the central region of the wafer 400, thereby enhancing the cooling effect of the second regulating device 500 on the central region of the wafer 400. Simultaneously, it avoids excessively lowering the temperature of the edge region of the wafer 400, preventing an increase in the temperature gradient between the central and edge regions of the wafer 400.

[0068] It should be noted that a circulation pump 700 is also installed on the bottom wall of the reaction chamber 100. The circulation pump 700 can guide the gas inside the reaction chamber 100 to the outside of the reaction chamber 100. For example, the circulation pump 700 cooperates with the second regulating device 500. After the cooling gas from the second regulating device 500 cools the wafer 400 from the front, the cooling gas will carry away the impurity particles located in the reaction chamber 100. Then, by turning on the circulation pump 700, the impurity particles and residual gas in the reaction chamber 100 can be discharged to the outside of the reaction chamber 100, which can purify the reaction chamber 100, prevent the impurity particles in the reaction chamber 100 from affecting the performance of the prepared film, and improve the yield of the semiconductor structure formed using this semiconductor equipment.

[0069] Please refer to the attached document. Figure 5 At least two second temperature regulating parts 510 are arranged at intervals along the circumference of the electrostatic chuck 200, and there is a preset distance between adjacent second temperature regulating parts 510. That is, adjacent second temperature regulating parts 510 do not contact each other.

[0070] The second regulating device 500 is usually mounted on the side wall of the reaction chamber 100 via a bracket 520. In this embodiment, multiple second temperature regulating parts 510 are arranged at intervals. On the one hand, this can prevent adjacent second temperature regulating parts 510 from interfering with each other, and on the other hand, it can prevent the bracket 520 from deforming, thereby improving the safety performance of the second regulating device 500.

[0071] The preset spacing can be freely set according to the performance of the semiconductor equipment and the wafer film layer, and this embodiment does not impose specific limitations.

[0072] Please continue to refer to the appendix. Figure 5 In one possible implementation, each second temperature regulating unit 510 includes an arc-shaped cooling plate fixedly connected to the reaction chamber 100; as an example, the arc-shaped cooling plate is fixedly connected to the support 520.

[0073] The arc-shaped cooling plate includes a first cavity and a first air inlet and a first air outlet respectively connected to the first cavity. The first air inlet is used to connect to a cooling air source to provide cooling gas into the first cavity.

[0074] The first outlet is used to introduce cooling gas into the reaction chamber 100. As an example, the first outlet is equipped with an outlet nozzle, the material of which can include any one of Al, Fe, Al₂O₃, and AlN. This enhances the hardness of the outlet nozzle, preventing deformation and extending the service life of the second regulating device 500, thereby improving the service life of the semiconductor device.

[0075] In this embodiment, each arc-shaped cooling plate includes an independent air inlet and an air outlet, which can reasonably adjust the flow rate of cooling gas in each arc-shaped cooling plate according to actual needs, and specifically regulate the temperature of the front side of the wafer 400.

[0076] It should be noted that the number of the first air outlets on each arc-shaped cooling plate can be freely set according to actual needs. For example, please refer to the attached diagram. Figure 6 There are multiple first air outlets 530, and these multiple first air outlets 530 include multiple first air outlet groups 540, that is, the multiple first air outlets 530 are divided into multiple first air outlet groups 540. Among them, the first air outlets 530 located within the dashed box constitute a first air outlet group 540.

[0077] Multiple first exhaust port groups 540 are spaced apart on the arc-shaped cooling plate along a direction perpendicular to the electrostatic chuck 200; the number of exhaust ports in the multiple first exhaust port groups 540 decreases sequentially from the top to the bottom of the arc-shaped cooling plate. That is, from top to bottom, the number of first exhaust ports 530 in the multiple first exhaust port groups 540 decreases sequentially. This arrangement allows for selective modification of the flow rate in each exhaust port group, thereby changing the gas flow rate in the entire arc-shaped cooling plate and mitigating the thermal stress accumulation on the aluminum film on the wafer surface caused by sputtering particle bombardment.

[0078] It should be noted that the second adjustment device 500 is not limited to the structure described above, and other options are also possible.

[0079] In one possible implementation, the second regulating device 500 includes an annular cooling plate, the shape of which may correspond to the shape of the reaction chamber 100.

[0080] The annular cooling plate includes a second cavity, a second air inlet, and multiple second air outlets. The second air inlet is connected to the second cavity and is also connected to a cooling air source to introduce cooling gas into the second cavity.

[0081] Multiple second air outlets are spaced apart on the annular cooling plate, and all of the multiple second air outlets are connected to the second cavity for introducing cooling gas into the reaction chamber 100. These multiple second air outlets may also include multiple groups of second air outlets, which are spaced apart along the direction perpendicular to the electrostatic chuck 200, and the number of second air outlets in each group decreases sequentially.

[0082] This configuration allows for selective adjustment of the flow rate in each air outlet group, thereby altering the gas flow rate throughout the entire arc-shaped cooling plate and mitigating thermal stress accumulation on the aluminum film on the wafer surface caused by sputtering particle bombardment. Furthermore, this embodiment offers the advantage of structural simplicity by configuring the second adjustment device as a single annular cooling plate.

[0083] In one possible implementation, the semiconductor device further includes a first temperature sensor 600, wherein the first temperature sensor 600 is disposed within the reaction chamber 100 and at least near the second temperature regulating unit 510, for testing the temperature of the area of ​​the wafer 400 corresponding to the second temperature regulating unit 510.

[0084] Please refer to the attached document. Figure 5 There are multiple first temperature sensors 600. In one example, the number of first temperature sensors 600 is the same as the number of second temperature regulating units 510, and they are arranged in a one-to-one correspondence. For example, one of the first temperature sensors 600 is located below one of the second temperature regulating units 510, and is used to test the temperature of the area of ​​the wafer 400 corresponding to that second temperature regulating unit 510. With this arrangement, multiple first temperature sensors 600 can sense temperature changes in different areas of the wafer 400, thereby controlling the flow rate of cooling gas from each second temperature regulating unit to achieve uniform cooling.

[0085] Furthermore, based on the detection results of multiple first temperature sensors 600, the cooling gas flow rate and velocity of multiple second temperature regulating units 510 can be controlled to ensure uniform heating of the wafer 400 and reduce the risk of wafer 400 cracking due to uneven heating.

[0086] In another example, the number of first temperature sensors 600 is greater than the number of second temperature regulating units 510. For example, the number of first temperature sensors 600 is twice the number of second temperature regulating units 510. Two first temperature sensors 600 are positioned below one of the second temperature regulating units 510, thus allowing for more accurate characterization of the temperature of the area of ​​the wafer 400 corresponding to that second temperature regulating unit 510. This arrangement allows multiple first temperature sensors 600 to sense temperature changes in different areas of the wafer 400, thereby controlling the flow rate of cooling gas from each second temperature regulating unit to achieve uniform cooling.

[0087] It should be noted that when the second adjustment device is an annular cooling plate, the number of first temperature sensors 600 can also be multiple. Multiple first temperature sensors 600 are located below the annular cooling plate and are spaced apart along the circumference of the annular cooling plate.

[0088] Please refer to the attached document. Figure 7 This disclosure provides a method for controlling a semiconductor device, wherein the semiconductor device can be referenced in the appendix. Figure 2 To be continued Figure 6 It includes a first adjusting device 300, a second adjusting device 500, and an electrostatic chuck 200; the electrostatic chuck 200 includes an adsorption surface 210 and a non-adsorption surface disposed opposite to each other, the adsorption surface 210 being used to adsorb the wafer 400; the first adjusting device 300 is located on one side of the non-adsorption surface, wherein the first adjusting device 300 includes a plurality of first temperature adjusting parts 310; the second adjusting device 500 is located on one side of the adsorption surface 210.

[0089] Control methods for semiconductor devices include:

[0090] Step S100: Obtain the first temperature of the wafer and the corresponding region of each first temperature adjustment section, and form a first temperature set from multiple first temperatures.

[0091] In this embodiment, the temperature of the region of the wafer 400 corresponding to each first temperature adjustment unit 310 can be detected by a second temperature sensor. In this way, multiple first temperatures can be obtained, and the multiple first temperatures can form a first temperature set.

[0092] Step S200: Determine the working state of each first temperature regulating unit of the first regulating device according to each first temperature in the first temperature set and the first preset temperature.

[0093] The operating state of each first temperature regulating unit includes whether the first temperature regulating unit is turned on or turned off. The operating efficiency of the first temperature regulating unit may also be included.

[0094] For example, it is determined whether each first temperature is higher than a first preset temperature. If the first temperature is higher than the first preset temperature, the corresponding first temperature adjustment unit 310 is turned on; if the first temperature is lower than the first preset temperature, the corresponding first temperature adjustment unit 310 is turned off.

[0095] When the first temperature regulating unit 310 is turned on, the flow rate of the cooling medium in the first temperature regulating unit 310 can also be adjusted according to the first temperature.

[0096] Step S300: Control the first regulating device to execute a preset time according to the working state of each first temperature regulating unit.

[0097] After the first regulating device operates for a preset time according to the working state of each first temperature regulating unit, the temperature of each area corresponding to the wafer 400 and the first temperature regulating unit 310 is made as uniform as possible, and the temperature difference between each area is controlled within 30 degrees.

[0098] Step S400: Obtain the second temperature of the wafer corresponding to each region of the first temperature adjustment section, and form a second temperature set from multiple second temperatures.

[0099] After the first adjustment device 300 cools the wafer 400 from the back for a preset time, the second temperature of the wafer 400 and the corresponding area of ​​each first temperature adjustment unit 310 are obtained again by the second temperature sensor to form a second temperature set.

[0100] Step S500: Determine the operating state of the first regulating device based on the difference between any two second temperatures in the second temperature set and the second preset temperature; if the difference between any two second temperatures is higher than the second preset temperature, repeat the above steps until the difference between any two second temperatures is lower than the second preset temperature.

[0101] The first adjustment device 300 has two operating states: working and not working. For example, after a preset time has been executed according to step S300, the second temperature of the wafer 400 corresponding to each region of the first temperature adjustment unit 310 can be obtained.

[0102] The operating state of the first regulating device 300 is determined by judging the relationship between the difference between any two second temperatures and a second preset temperature. The relationship between the difference between any two second temperatures and the second preset temperature is used to characterize whether the multiple second temperatures tend to be consistent. In one example, the second preset temperature is 30°C.

[0103] If the difference between any two second temperatures is higher than the second preset temperature, it indicates that the temperature of each region of wafer 400 has not become uniform. Then, the above steps S100 to S400 are repeated until the difference between any two second temperatures is lower than the second preset temperature. At this time, the temperature of each region of wafer 400 is approximately uniform.

[0104] Step S600: If the difference between any two second temperatures is lower than the second preset temperature, control the first regulating device to close and control the second regulating device to open, so as to perform rapid cooling.

[0105] Once the temperature of each area of ​​wafer 400 is approximately uniform, the first regulating device 300 can be turned off and the second regulating device 500 can be turned on. The second regulating device 500 will rapidly cool the wafer 400 from the front, causing the temperature of the wafer 400 to drop rapidly to below 100°C.

[0106] In this embodiment, the second regulating device 500 includes at least two opposing second temperature regulating units 510, each second temperature regulating unit 510 injecting cooling gas into the reaction chamber 100; the control method for the semiconductor device further includes:

[0107] A third temperature is acquired for the region corresponding to each second temperature adjustment section of the wafer, and multiple third temperatures form a third temperature set. The third temperature can be acquired by a first temperature sensor 600.

[0108] Then, based on each third temperature in the third temperature set and the third preset temperature, the operating state of each second temperature regulating unit is determined. The operating state of each second temperature regulating unit 510 includes whether the second temperature regulating unit 510 is on or off. It may also include the operating efficiency of the second temperature regulating unit 510.

[0109] For example, it is determined whether each third temperature is higher than a third preset temperature. If the third temperature is higher than the third preset temperature, the corresponding second temperature adjustment unit 510 is turned on; if the third temperature is lower than the third preset temperature, the corresponding second temperature adjustment unit 510 is turned off.

[0110] It should be noted that the second temperature regulating unit 510 includes multiple air outlets 530, and the multiple air outlets include multiple air outlet groups 540; when the second temperature regulating unit 510 is turned on, it can also determine whether each air outlet group 540 is turned on, and the flow rate of cooling gas in each air outlet group 540. That is to say, the operating state of each air outlet group 540 can be selectively determined.

[0111] In this embodiment, by reasonably controlling the working states of the first regulating device 300 and the second regulating device 500, the temperature on the back side of the wafer 400 can be made more uniform and consistent. Then, the second regulating device 500 can rapidly cool the wafer 400 from the front side, achieving a balanced cooling effect, effectively improving the defects of the wafer 400 and increasing its yield.

[0112] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0113] In the description of this specification, references to terms such as “one embodiment,” “some embodiments,” “illustrative embodiment,” “example,” “specific example,” or “some examples” refer to specific features, structures, materials, or characteristics described in connection with an embodiment or example that are included in at least one embodiment or example of this disclosure.

[0114] In this specification, the illustrative expressions of the terms used do not necessarily refer to the same implementation or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more implementations or examples.

[0115] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A semiconductor device, characterized in that, include: The reaction chamber, the electrostatic chuck, the first adjustment device, and the second adjustment device are provided. The electrostatic chuck is disposed in the reaction chamber and includes an adsorption surface and a non-adsorption surface arranged opposite to each other. The adsorption surface is used to adsorb wafers. The first adjustment device is located on one side of the non-adsorption surface and abuts against the non-adsorption surface, and is used to adjust the temperature of the wafer from the back side; The second adjustment device is disposed on the side wall of the reaction chamber and located on one side of the adsorption surface, and is used to adjust the temperature of the wafer from the front. The first adjustment device includes a plurality of first temperature adjustment sections, which are spaced apart along the direction from the center of the electrostatic chuck to the edge. Each first temperature adjustment section is used to adjust the temperature of the adsorption surface corresponding to it. The first temperature regulating unit includes an annular cooling pipe, and a plurality of the annular cooling pipes are arranged at intervals along the direction from the center of the electrostatic chuck to the edge; Along the direction from the center of the electrostatic chuck to the edge, the inner diameters of the plurality of annular cooling tubes decrease sequentially; The second regulating device includes at least two opposing second temperature regulating units, each of which is configured to inject cooling gas into the reaction chamber; Alternatively, the second regulating device includes an annular cooling plate; the annular cooling plate includes a second cavity and a second air inlet and a plurality of spaced-apart second air outlets respectively connected to the second cavity, the second air inlet being used for connecting to a cooling gas source, and the plurality of second air outlets being used for introducing cooling gas into the reaction chamber.

2. The semiconductor device according to claim 1, characterized in that, At least two second temperature adjustment units are arranged at intervals along the circumferential direction of the electrostatic chuck, and there is a preset distance between adjacent second temperature adjustment units.

3. The semiconductor device according to claim 2, characterized in that, Each of the second temperature regulating units includes an arc-shaped cooling plate, which is fixedly connected to the reaction chamber; The arc-shaped cooling plate includes a first cavity and a first air inlet and a first air outlet respectively connected to the first cavity. The first air inlet is used to connect to a cooling gas source, and the first air outlet is used to introduce cooling gas into the reaction chamber.

4. The semiconductor device according to claim 3, characterized in that, The number of first air outlets is multiple, and the multiple first air outlets include multiple air outlet groups. The multiple air outlet groups are spaced apart on the arc-shaped cooling plate along a direction perpendicular to the electrostatic chuck. Along the direction from the top of the arc-shaped cooling plate to the bottom of the arc-shaped cooling plate, the number of air outlets in the plurality of air outlet groups decreases sequentially.

5. The semiconductor device according to any one of claims 2-4, characterized in that, It also includes a first temperature sensor, which is disposed within the reaction chamber and at least near the second temperature regulating unit.

6. A method for controlling a semiconductor device, characterized in that, The semiconductor device includes a first adjustment device, a second adjustment device, and an electrostatic chuck; the electrostatic chuck includes an adsorption surface and a non-adsorption surface arranged opposite to each other, the adsorption surface being used to adsorb wafers; the first adjustment device is located on one side of the non-adsorption surface, wherein the first adjustment device includes a plurality of first temperature adjustment sections; the second adjustment device is located on one side of the adsorption surface. The control method includes: The first temperature of the wafer and the region corresponding to each of the first temperature adjustment sections is obtained, and the plurality of first temperatures form a first temperature set; Based on each of the first temperatures and the first preset temperatures in the first temperature set, the operating state of each of the first temperature regulating units of the first regulating device is determined; The first regulating device is controlled to execute a preset time according to the working state of each of the first temperature regulating units; The second temperature of the wafer corresponding to each of the first temperature adjustment sections is obtained, and the plurality of second temperatures form a second temperature set; The operating state of the first regulating device is determined based on the difference between any two second temperatures in the second temperature set and the second preset temperature; if the difference between any two second temperatures is higher than the second preset temperature, the above steps are repeated until the difference between any two second temperatures is lower than the second preset temperature. If the difference between any two of the second temperatures is lower than the second preset temperature, the first regulating device is turned off and the second regulating device is turned on to perform rapid cooling.

7. The control method for a semiconductor device according to claim 6, characterized in that, The second regulating device includes at least two opposingly arranged second temperature regulating units; the steps of controlling the first regulating device to close and controlling the second regulating device to open according to each second temperature set include: The third temperature of the wafer and the region corresponding to each second temperature adjustment section is obtained, and multiple third temperatures form a third temperature set; The operating state of each of the second temperature regulating units is determined based on each of the third temperatures and the third preset temperatures in the third temperature set.

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