Filter and antenna composite

Abstract

A filter and antenna composite part capable of adjusting the influence of a cavity resonator on the characteristics of the whole is provided. The filter of the present invention includes a first port, a second port, a path, a circuit portion, and at least one cavity resonator. The path connects the first port with the second port. The circuit portion is disposed on the path. The at least one cavity resonator is each coupled with the path from the outside of the path on the circuit structure. The first cavity resonator is coupled with the path between the first port and the circuit portion. The second cavity resonator is coupled with the path between the second port and the circuit portion.

Description

Technical Field

[0001] The present invention relates to a filter having a cavity resonator and an antenna composite component having the filter. Background Technology

[0002] As one of the electronic components used in communication devices, bandpass filters exist. Bandpass filters require reducing insertion loss in the passband and increasing insertion loss outside the passband.

[0003] Chinese Patent Application Publication No. 111710941A describes a filter device composed of a bandpass filter and a band-stop filter. In this filter device, the band-stop filter is used to increase the insertion loss in the frequency range higher than the passband.

[0004] Chinese Patent Application Publication No. 112385079A describes a filter resonator having sidewalls made of conductive material and a dielectric.

[0005] Currently, communication services using the fifth-generation mobile communication system (hereinafter referred to as 5G) have begun to be provided. 5G envisions using frequency bands above 10 GHz, particularly the 10–30 GHz quasi-millimeter wave band and the 30–300 GHz millimeter wave band. Within these frequency bands, similar to those used in mobile communication systems up to the fourth generation, there are multiple standards with relatively similar frequency bands. Therefore, in the bandpass filters used for 5G, it is also required that the insertion loss varies drastically within a frequency range close to the passband.

[0006] In this context, to achieve a characteristic where the insertion loss changes drastically in the frequency range close to the passband in a bandpass filter, a bandstop filter is considered. In this case, the center frequency of the stopband of the bandstop filter needs to be set close to the passband frequency. However, this results in an increase in the insertion loss of the passband of the bandpass filter.

[0007] As described in Chinese Patent Application Publication No. 112385079A, a cavity resonator can increase the Q value. Therefore, the use of a cavity resonator to construct a band-stop filter is considered. When using a cavity resonator, it is also necessary to suppress the increase in insertion loss in the passband of the bandpass filter. To this end, countermeasures are needed to appropriately adjust the effect of the cavity resonator on the passband attenuation characteristics of the bandpass filter. However, such countermeasures have not been sufficiently studied. Summary of the Invention

[0008] The purpose of this invention is to provide a filter and antenna composite component that can adjust the effect of a cavity resonator on the overall characteristics.

[0009] The filter of the present invention includes: a first port, a second port, a path connecting the first port and the second port, a circuit portion disposed on the path, and at least one cavity resonator coupled to the path from the outside of the path in terms of circuit structure.

[0010] In the filter of the present invention, at least one cavity resonator may be composed of a conductor surrounding a three-dimensional region and a dielectric located in the region.

[0011] Furthermore, in the filter of the present invention, at least one cavity resonator can constitute a band-stop filter.

[0012] Additionally, in the filter of the present invention, the path may include a conductor portion disposed within at least one cavity resonator and extending in one direction. The conductor portion may be located offset from the center of gravity of the at least one cavity resonator when viewed from one direction. The at least one cavity resonator may be coupled to the conductor portion.

[0013] Furthermore, in the filter of the present invention, at least one cavity resonator can be multiple cavity resonators. Multiple cavity resonators may include a first cavity resonator coupled to a path between a first port and a circuit section, and a second cavity resonator coupled to a path between a second port and a circuit section.

[0014] Furthermore, in the filter of this invention, the circuit portion can be a bandpass filter. Alternatively, the circuit portion can also be a line.

[0015] Additionally, the filter of the present invention may further include a main body for integrating the first port, the second port, the path, the circuit portion, and at least one cavity resonator into one unit. The main body may have a first surface and a second surface facing opposite sides. Furthermore, in this case, the dimension of the at least one cavity resonator in the direction perpendicular to the first surface may be smaller than the dimension of the at least one cavity resonator in the direction parallel to the first surface.

[0016] Alternatively, if the main body has a first surface and a second surface, the first port may be disposed on the first surface, and the second port may be disposed at a different position in a direction perpendicular to the first surface. Or, both the first port and the second port may be disposed on the first surface.

[0017] The antenna composite component of the present invention includes the filter of the present invention and an antenna connected to the second port.

[0018] In the filter and antenna composite component of the present invention, at least one cavity resonator is coupled to the path from the outside of the path connecting the first port and the second port in the circuit structure. Therefore, according to the present invention, a filter can be implemented that can adjust the effect of the cavity resonator on the overall characteristics.

[0019] Other objects, features and benefits of the present invention will become fully apparent from the following description. Attached Figure Description

[0020] Figure 1 This is a circuit diagram showing the circuit structure of the filter according to the first embodiment of the present invention.

[0021] Figure 2 This is an explanatory diagram showing the pattern formation surface of the first dielectric layer in the main body of the filter according to the first embodiment of the present invention.

[0022] Figure 3 This is an explanatory diagram showing the pattern formation surface of the second dielectric layer in the main body of the filter according to the first embodiment of the present invention.

[0023] Figure 4 This is an explanatory diagram showing the pattern formation surface of the third to ninth dielectric layers in the main body of the filter according to the first embodiment of the present invention.

[0024] Figure 5 This is an explanatory diagram showing the pattern formation surface of the tenth dielectric layer in the main body of the filter according to the first embodiment of the present invention.

[0025] Figure 6 This is an explanatory diagram showing the pattern formation surface of the eleventh dielectric layer in the main body of the filter according to the first embodiment of the present invention.

[0026] Figure 7 This is an explanatory diagram showing the pattern formation surfaces of the twelfth to seventeenth dielectric layers in the main body of the filter according to the first embodiment of the present invention.

[0027] Figure 8 This is an explanatory diagram showing the terminal forming surface of the eighteenth dielectric layer in the main body of the filter according to the first embodiment of the present invention.

[0028] Figure 9 This is a perspective view showing the appearance of the filter according to the first embodiment of the present invention.

[0029] Figure 10 This is a perspective view showing the interior of the main body of the filter according to the first embodiment of the present invention.

[0030] Figure 11 This is a top view showing the interior of the main body of the filter according to the first embodiment of the present invention.

[0031] Figure 12 This is a characteristic diagram showing one example of the frequency characteristics of the filter according to the first embodiment of the present invention.

[0032] Figure 13 It is Figure 11 The frequency response shown is a magnified representation of a portion of the frequency response.

[0033] Figure 14 This is a circuit diagram showing the circuit structure of the antenna composite component according to the second embodiment of the present invention.

[0034] Figure 15 This is an explanatory diagram showing the pattern formation surface of the first dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0035] Figure 16 This is an explanatory diagram showing the pattern formation surface of the second dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0036] Figure 17 This is an explanatory diagram showing the pattern formation surface of the third to eighth dielectric layers in the main body of the antenna composite component according to the second embodiment of the present invention.

[0037] Figure 18 This is an explanatory diagram showing the pattern formation surface of the ninth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0038] Figure 19 This is an explanatory diagram showing the pattern formation surface of the tenth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0039] Figure 20 This is an explanatory diagram showing the pattern formation surface of the eleventh dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0040] Figure 21 This is an explanatory diagram showing the pattern formation surfaces of the twelfth to seventeenth dielectric layers in the main body of the antenna composite component according to the second embodiment of the present invention.

[0041] Figure 22 This is an explanatory diagram showing the pattern formation surface of the eighteenth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0042] Figure 23 This is an explanatory diagram showing the pattern formation surfaces of the nineteenth and twentieth dielectric layers in the main body of the antenna composite component according to the second embodiment of the present invention.

[0043] Figure 24 This is an explanatory diagram showing the pattern formation surface of the twenty-first dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0044] Figure 25This is an explanatory diagram showing the pattern formation surfaces of the twenty-second and twenty-third dielectric layers in the main body of the antenna composite component according to the second embodiment of the present invention.

[0045] Figure 26 This is an explanatory diagram showing the pattern formation surface of the twenty-fourth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0046] Figure 27 This is an explanatory diagram showing the pattern formation surface of the twenty-fifth to thirty-second dielectric layers in the main body of the antenna composite component according to the second embodiment of the present invention.

[0047] Figure 28 This is an explanatory diagram showing the pattern formation surface of the thirty-third dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0048] Figure 29 This is an explanatory diagram showing the pattern formation surface of the thirty-fourth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0049] Figure 30 This is an explanatory diagram showing the pattern formation surface of the thirty-fifth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0050] Figure 31 This is an explanatory diagram showing the pattern formation surfaces of the thirty-sixth to fifty-fourth dielectric layers in the main body of the antenna composite component according to the second embodiment of the present invention.

[0051] Figure 32 This is an explanatory diagram showing the pattern formation surface of the fifty-fifth dielectric layer in the main body of the antenna composite component according to the second embodiment of the present invention.

[0052] Figure 33 This is a perspective view showing the appearance of the antenna composite component according to the second embodiment of the present invention.

[0053] Figure 34 This is a perspective view showing the interior of the first part of the main body of the antenna composite component according to the second embodiment of the present invention.

[0054] Figure 35 This is a top view showing the interior of the second part of the main body of the antenna composite component according to the second embodiment of the present invention.

[0055] Figure 36 This is a top view showing the interior of the first part of the main body of the antenna composite component according to the second embodiment of the present invention.

[0056] Figure 37 This is a circuit diagram showing the circuit structure of the antenna composite component according to the third embodiment of the present invention.

[0057] Figure 38 This is an explanatory diagram showing the pattern formation surface of the second dielectric layer in the main body of the antenna composite component according to the third embodiment of the present invention.

[0058] Figure 39 This is an explanatory diagram showing the pattern formation surface of the third to ninth dielectric layers in the main body of the antenna composite component according to the third embodiment of the present invention.

[0059] Figure 40 This is an explanatory diagram showing the pattern formation surface of the tenth dielectric layer in the main body of the antenna composite component according to the third embodiment of the present invention.

[0060] Figure 41 This is an explanatory diagram showing the pattern formation surfaces of the eleventh to seventeenth dielectric layers in the main body of the antenna composite component according to the third embodiment of the present invention.

[0061] Figure 42 This is a perspective view showing the interior of the first part of the main body of the antenna composite component according to the third embodiment of the present invention. Detailed Implementation

[0062] [First Implementation Method]

[0063] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 A general description of the structure of the filter 1 according to the first embodiment of the present invention will be given. Figure 1 This is a circuit diagram showing the circuit structure of filter 1. Filter 1 includes: a first port 3, a second port 4, a path 5 connecting the first port 3 and the second port 4, a circuit section 10 disposed on the path 5, and at least one cavity resonator. The first and second ports 3 and 4 are each ports used for signal input or output.

[0064] In this embodiment, circuit section 10 is a bandpass filter. Filter 1 as a whole functions as a bandpass filter.

[0065] At least one cavity resonator is coupled to path 5 from the outside of path 5 in the circuit structure. Furthermore, at least one cavity resonator is not disposed on path 5 in the circuit structure. Additionally, in this application, the phrase "in the circuit structure" is used to indicate that it is a configuration in the circuit diagram, not a physical configuration. Therefore, as long as at least one cavity resonator is coupled to path 5 from the outside of path 5 in the circuit diagram, path 5 can also physically pass through the interior of at least one cavity resonator.

[0066] In this embodiment, at least one cavity resonator constitutes a band-stop filter. Alternatively, at least one cavity resonator can be multiple cavity resonators. Figure 1 In the example shown, multiple cavity resonators include a cavity resonator 21 coupled to path 5 between the first port 3 and the circuit section 10, and a cavity resonator 22 coupled to path 5 between the second port 4 and the circuit section 10. Figure 1 In the diagram, cavity resonators 21 and 22 are each represented by an equivalent circuit consisting of two inductors and two capacitors.

[0067] The following is for reference Figure 1 An example of the circuit structure of filter 1 and circuit section 10 is described below. Circuit section 10 includes two resonators 11 and 12 arranged sequentially from the first port 3 side in the circuit structure. Resonators 11 and 12 are each a quarter-wavelength resonator with one end short-circuited and the other end open. Resonators 11 and 12 are magnetically coupled to each other.

[0068] One end of resonator 11 is coupled to the first port 3. One end of resonator 12 is coupled to the second port 4. The other ends of resonators 11 and 12 are grounded. Figure 1 In the figure, reference numeral L3 indicates the inductive component of the line connecting resonators 11 and 12 to ground potential.

[0069] The filter 1 also includes a capacitor C1 disposed in the circuit structure between the resonator 11 and the first port 3, and a capacitor C2 disposed in the circuit structure between the resonator 12 and the second port 4.

[0070] Path 5 includes conductor sections L1 and L2. Conductor section L1 is located between the first port 3 and capacitor C1 in the circuit structure. Conductor section L2 is located between the second port 4 and capacitor C2 in the circuit structure. Cavity resonators 21 and 22 are coupled to conductor sections L1 and L2, respectively. Figure 1 In the figure, the two curves marked with the reference numeral M represent the coupling between the cavity resonator 21 and the conductor part L1, and the coupling between the cavity resonator 22 and the conductor part L2, respectively.

[0071] Next, the physical structure of filter 1 will be described. Filter 1 includes components for converting a reference... Figure 1 The components of the filter 1 described herein are integrated into a single body 50. The first port 3, the second port 4, the path 5, the circuit section 10, and the cavity resonators 21 and 22 are integrated with the body 50. Furthermore, the body 50 is shown in the following description. Figure 9 .

[0072] The main body 50 includes multiple stacked dielectric layers, multiple conductor layers formed on the multiple dielectric layers, and multiple vias. See below for reference. Figures 2 to 8The plurality of dielectric layers and the plurality of conductor layers constituting the main body 50 will be described. In this embodiment, the main body 50 has 18 stacked dielectric layers. Hereinafter, these 18 dielectric layers will be referred to as the first layer to the eighteenth layer from bottom to top. In addition, the first layer to the eighteenth layer will be indicated by reference numerals 51 to 68.

[0073] Figure 2 This indicates the patterned surface of the first dielectric layer 51. Multiple conductor layers are formed on the patterned surface of the dielectric layer 51. These conductor layers include conductor layers 511 and 512. Furthermore, multiple vias are formed on the dielectric layer 51, each connected to one of the conductor layers. These vias include specific vias 51T1 and 51T2, each connected to conductor layers 511 and 512. Figure 2 The image depicts multiple first circles and multiple second circles located inside the first circles. The multiple first circles represent multiple conductor layers, and the multiple second circles represent multiple vias.

[0074] Figure 3 This indicates the patterned surface of the second dielectric layer 52. Conductor layers 521, 522, and 523 are formed on the patterned surface of the dielectric layer 52. Specific vias 51T1 and 51T2 formed in the dielectric layer 51 are connected to the conductor layers 521 and 522, respectively. Multiple vias formed in the dielectric layer 51 (excluding the specific vias 51T1 and 51T2) are connected to the conductor layer 523. Additionally, two specific vias 52T1 and 52T2 connected to the conductor layers 521 and 522, respectively, and multiple vias connected to the conductor layer 523 are formed on the dielectric layer 52. Figure 3 In the diagram, multiple circles depicted within the conductor layer 523 represent multiple through holes.

[0075] Figure 4 This represents the patterned surfaces of the third to ninth dielectric layers 53 to 59. Each of the dielectric layers 53 to 59 has multiple vias formed. These vias include specific vias 53T1 and 53T2 formed in each of the dielectric layers 53 to 59. Specific vias 52T1 and 52T2 formed in dielectric layer 52 are respectively connected to specific vias 53T1 and 53T2 formed in dielectric layer 53. Figure 4 In the diagram, multiple circles represent multiple through-holes. Furthermore, in dielectric layers 53-59, adjacent through-holes are interconnected.

[0076] Figure 5This represents the patterned surface of the tenth dielectric layer 60. Conductor layers 601, 602, 603, and 604 for the resonator are formed on the patterned surface of the dielectric layer 60. Conductor layers 601 and 602 each have a first end and a second end located on opposite sides of each other. The first end of conductor layer 601 is connected to the first end of conductor layer 602. The second end of conductor layer 601 is adjacent to conductor layer 603 at a predetermined interval. The second end of conductor layer 602 is adjacent to conductor layer 604 at a predetermined interval. Specific vias 53T1 and 53T2 formed in the dielectric layer 59 are connected to conductor layers 603 and 604, respectively.

[0077] In addition, multiple vias are formed in the dielectric layer 60. Figure 5 In the diagram, multiple circles represent multiple through holes.

[0078] Figure 6 This indicates the patterned surface of the eleventh dielectric layer 61. Conductor layers 611 and 612 are formed on the patterned surface of the dielectric layer 61. Additionally, multiple vias are formed in the dielectric layer 61. Figure 6 In the diagram, multiple circles represent multiple through holes.

[0079] Figure 7 This indicates the pattern formation surfaces of the twelfth to seventeenth dielectric layers 62-67. Multiple vias are formed in each of the dielectric layers 62-67. Figure 7 In the diagram, multiple circles represent multiple through holes. Furthermore, in dielectric layers 62-67, adjacent through holes are interconnected.

[0080] Figure 8 This indicates the patterned surface of the eighteenth dielectric layer 68. A conductor layer 681 is formed on the patterned surface of the dielectric layer 68. Multiple vias formed in the dielectric layer 67 are connected to the conductor layer 681.

[0081] Figure 9 This refers to the main body 50, which is composed of 51 to 68 dielectric layers, from the first to the eighteenth layer. Figure 10 and Figure 11 This indicates the interior of the main body 50. The main body 50 has a bottom surface 50A and a top surface 50B located at both ends of the stacking direction T of the multiple dielectric layers, and four side surfaces 50C to 50F connecting the bottom surface 50A and the top surface 50B. Side surfaces 50C and 50D face opposite sides to each other, and side surfaces 50E and 50F also face opposite sides to each other. Side surfaces 50C to 50F are perpendicular to the bottom surface 50A and the top surface 50B.

[0082] Here, as Figure 9The diagram defines the X, Y, and Z directions. The X, Y, and Z directions are orthogonal to each other. In this embodiment, the direction parallel to the stacking direction T is designated as the Z direction. Furthermore, the direction opposite to the X direction is designated as the -X direction, the direction opposite to the Y direction as the -Y direction, and the direction opposite to the Z direction as the -Z direction.

[0083] like Figure 9 As shown, bottom surface 50A is located at the end of the main body 50 in the -Z direction. Top surface 50B is located at the end of the main body 50 in the Z direction. Side surface 50C is located at the end of the main body 50 in the -X direction. Side surface 50D is located at the end of the main body 50 in the X direction. Side surface 50E is located at the end of the main body 50 in the -Y direction. Side surface 50F is located at the end of the main body 50 in the Y direction.

[0084] The bottom surface 50A and the top surface 50B face opposite sides. The bottom surface 50A corresponds to the "first surface" in this invention. The top surface 50B corresponds to the "second surface" in this invention.

[0085] The main body 50 is constructed by stacking the first to eighteenth dielectric layers 51 to 68, with the patterned surface of the first dielectric layer 51 forming the bottom surface 50A of the main body 50 and the side of the eighteenth dielectric layer 68 opposite to the patterned surface forming the top surface 50B of the main body 50. For example... Figure 10 As shown, there are layers inside the main body 50. Figures 2 to 8 The diagram shows multiple conductor layers and multiple vias.

[0086] In addition to the aforementioned specific through holes Figures 2 to 7 The multiple vias shown are each connected to a conductor layer or other vias overlapping in the stacking direction T when the first to eighteenth dielectric layers 51 to 68 are stacked.

[0087] The following is about Figure 1 The components of filter 1 shown are the same as Figures 2 to 10 The correspondence of the internal components of the main body 50 is explained below. The first port 3 is composed of a conductor layer 511. The second port 4 is composed of a conductor layer 512. In this embodiment, both the first port 3 and the second port 4 are disposed on the bottom surface 50A of the main body 50.

[0088] The resonator 11 of the circuit section 10 is composed of a resonator conductor layer 601. The resonator 12 of the circuit section 10 is composed of a resonator conductor layer 602.

[0089] Capacitor C1 is composed of resonator conductor layers 601, 603, and 611, and a dielectric layer 60 between these conductor layers. Capacitor C2 is composed of resonator conductor layers 602, 604, and 612, and a dielectric layer 60 between these conductor layers.

[0090] The conductor portion L1 of path 5 is composed of specific through holes 52T1 and 53T1. The conductor portion L2 of path 5 is composed of specific through holes 52T2 and 53T2.

[0091] Here, a structure formed by connecting two or more through holes in series is called a through-hole array. A through-hole array is a structure of conductors extending in a direction parallel to the Z-direction. The main body 50 includes through-hole arrays T1 and T2. Through-hole array T1 is composed of specific through holes 52T1 and 53T1. Through-hole array T2 is composed of specific through holes 52T2 and 53T2. The conductor portion L1 of path 5 is composed of through-hole array T1. The conductor portion L2 of path 5 is composed of through-hole array T2.

[0092] The main body 50 also includes multiple through-hole arrays T3, T4, T5, T6, and T7. For example... Figure 11 As shown, multiple through-hole arrays T3 are arranged in a direction parallel to the Y direction near side 50C. Multiple through-hole arrays T4 are arranged in a direction parallel to the Y direction near side 50D. Multiple through-hole arrays T5 are arranged in a direction parallel to the X direction near side 50E. Multiple through-hole arrays T6 are arranged in a direction parallel to the X direction near side 50F. Multiple through-hole arrays T7 are arranged in a direction parallel to the Y direction at the center of the main body 50 in a direction parallel to the X direction.

[0093] Multiple via arrays T3, T4, T5, T6, and T7 each connect conductor layer 523 to conductor layer 681. Multiple vias formed in dielectric layer 51 (excluding specific vias 51T1 and 51T2) are connected to conductor layer 523 and to multiple conductor layers (excluding conductor layers 511 and 512) formed on the patterned surface of dielectric layer 51. The multiple conductor layers (excluding conductor layers 511 and 512) formed on the patterned surface of dielectric layer 51 are grounded. Therefore, multiple via arrays T3, T4, T5, T6, and T7, as well as conductor layers 523 and 681, are grounded. Additionally, multiple via array T7 includes a via array connected to conductor layers 601 and 602 for resonators.

[0094] like Figure 11As shown, multiple via arrays T3, T5, T6, and T7, along with conductor layers 523 and 681, surround the three-dimensional region R1. Additionally, multiple via arrays T4, T5, T6, and T7, along with conductor layers 523 and 681, surround the three-dimensional region R2.

[0095] A first dielectric exists in region R1. The first dielectric is composed of a portion of each of dielectric layers 52 to 67. Additionally, a second dielectric exists in region R2. The second dielectric is composed of another portion of each of dielectric layers 52 to 67.

[0096] Cavity resonator 21 is composed of conductors (multiple via strings T3, T5, T6, and T7, and conductor layers 523 and 681) surrounding a three-dimensional region R1 and a first dielectric (a portion of each of dielectric layers 52 to 67) located in region R1. Cavity resonator 22 is composed of conductors (multiple via strings T4, T5, T6, and T7, and conductor layers 523 and 681) surrounding a three-dimensional region R2 and a second dielectric (another portion of each of dielectric layers 52 to 67) located in region R2.

[0097] Next, refer to Figures 2 to 11 The structural features of the filter 1 in this embodiment will be described. The via array T1, i.e., the conductor portion L1 of path 5, is disposed within the cavity resonator 21, specifically within region R1. Furthermore, the conductor portion L1 extends in a direction parallel to the Z-direction. When viewed from the Z-direction, i.e., when viewing the main body 50 from a position away from the main body 50 in the Z-direction, the conductor portion L1 is located at a position offset from the center of gravity of the cavity resonator 21. In this embodiment, in particular, the conductor portion L1 is located at a position offset from the center of gravity of the cavity resonator 21 in the X-direction when viewed from the Z-direction. The distance from the conductor portion L1 to the plurality of via arrays T7 is smaller than the distance from the conductor portion L1 to the plurality of via arrays T3.

[0098] The via string T2, i.e., the conductor portion L2 of path 5, is disposed within the cavity resonator 22, specifically within region R2. Furthermore, the conductor portion L2 extends in a direction parallel to the Z-direction. When viewed from the Z-direction, the conductor portion L2 is located at a position offset from the center of gravity of the cavity resonator 22. In this embodiment, in particular, the conductor portion L2 is located at a position offset from the center of gravity of the cavity resonator 22 in the -X-direction relative to the Z-direction. The distance from the conductor portion L2 to the plurality of via strings T7 is smaller than the distance from the conductor portion L1 to the plurality of via strings T4.

[0099] The size of the cavity resonator 21 in the direction parallel to the Z direction is smaller than the size of the cavity resonator 21 in the direction parallel to the bottom surface 50A (e.g., the size of the cavity resonator 21 in the direction parallel to the X direction and the size of the cavity resonator 21 in the direction parallel to the Y direction). The resonance mode of the cavity resonator 21 is the TE011 mode.

[0100] The size of the cavity resonator 22 in the direction parallel to the Z direction is smaller than the size of the cavity resonator 22 in the direction parallel to the bottom surface 50A (e.g., the size of the cavity resonator 22 in the direction parallel to the X direction and the size of the cavity resonator 22 in the direction parallel to the Y direction). The resonance mode of the cavity resonator 22 is the TE011 mode.

[0101] Cavity resonators 21 and 22 are arranged in a direction parallel to the X direction. In this embodiment, in particular, cavity resonator 21 is positioned closer to side 50C than to side 50D. Cavity resonator 22 is positioned closer to side 50D than to side 50C.

[0102] The resonator conductor layer 601 constituting resonator 11 extends from the outside of region R1 to the inside of region R1. The resonator conductor layer 602 constituting resonator 12 extends from the outside of region R2 to the inside of region R2.

[0103] Next, an example of the frequency characteristics of filter 1 in this embodiment will be shown. Figure 12 This is a characteristic diagram representing one example of the frequency characteristics of filter 1. Figure 13 It is Figure 12 The frequency response shown is a portion of the overall frequency response, specifically a magnified representation of the frequency range near the passband. Figure 12 and Figure 13 In the graph, the horizontal axis represents frequency, and the vertical axis represents attenuation. Additionally, in... Figure 12 and Figure 13 In the figure, the curve marked with reference numeral 91 represents the insertion loss, and the curve marked with reference numeral 92 represents the reflection loss.

[0104] exist Figure 12 and Figure 13 In the example shown, the center frequency of the stopband of the band-stop filter composed of cavity resonators 21 and 22 is located in the low-frequency range of the passband of the band-pass filter composed of circuit section 10. Figure 12 and Figure 13 As shown, according to this embodiment, it is possible to obtain a characteristic where the insertion loss (attenuation) changes drastically in a frequency range close to the passband. Furthermore, the magnitude of the insertion loss (the absolute value of the attenuation) in the passband is sufficiently small.

[0105] Next, the function and effect of the filter 1 in this embodiment will be explained. In this embodiment, the cavity resonators 21 and 22 are each coupled to the path 5 from the outside of the path 5 in the circuit structure. Therefore, according to this embodiment, the coupling between the cavity resonators 21 and 22 and the first and second ports 3 and 4 can be made weaker than the coupling between the circuit part 10 and the first and second ports 3 and 4. Therefore, according to this embodiment, the influence of the cavity resonators 21 and 22 on the overall characteristics of the filter 1 can be adjusted or suppressed.

[0106] Furthermore, in this embodiment, the conductor portion L1 of path 5 is located at a position offset in the X direction relative to the center of gravity of the cavity resonator 21 when viewed from the Z direction. In this embodiment, the coupling strength between the cavity resonator 21 and path 5 can be adjusted by adjusting the distance from the conductor portion L1 to the plurality of vias T7. Specifically, if the distance from the conductor portion L1 to the plurality of vias T7 is reduced, the coupling between the cavity resonator 21 and path 5 weakens. The distance from the conductor portion L1 to the plurality of vias T7 can be adjusted, for example, by shifting the position of the plurality of vias T7 in a direction parallel to the X direction.

[0107] Similarly, in this embodiment, the conductor portion L2 of path 5 is located at a position offset in the -X direction relative to the center of gravity of the cavity resonator 22 when viewed from the Z direction. In this embodiment, the coupling strength between the cavity resonator 22 and path 5 can be adjusted by adjusting the distance from the conductor portion L2 to the plurality of vias T7. Specifically, if the distance from the conductor portion L2 to the plurality of vias T7 is reduced, the coupling between the cavity resonator 22 and path 5 weakens. The distance from the conductor portion L2 to the plurality of vias T7 can be adjusted, for example, by shifting the position of the plurality of vias T7 in a direction parallel to the X direction.

[0108] Furthermore, in this embodiment, the cavity resonators 21 and 22 are arranged in a direction parallel to the X direction. Therefore, according to this embodiment, compared to the case where the cavity resonators 21 and 22 are stacked in a direction parallel to the Z direction, the size of the main body 50 in the direction parallel to the Z direction can be reduced.

[0109] [Second Implementation]

[0110] Next, the second embodiment of the present invention will be described. First, referring to... Figure 14 The general structure of the antenna composite component 101 in this embodiment will be described. Figure 14 This is a circuit diagram showing the circuit structure of the antenna composite component 101.

[0111] The antenna composite component 101 includes a first filter 1A and a second filter 1B. The circuit structures of the first and second filters 1A and 1B are the same as those of the filter 1 in the first embodiment. The first and second filters 1A and 1B function as bandpass filters, just like the filter 1.

[0112] In the following description, the constituent elements of the first and second filters 1A and 1B, except for the first and second ports, are referred to by the same reference numerals as those used for the constituent elements of filter 1. Furthermore, the first port of the first filter 1A is indicated by reference numeral 3A, the second port of the first filter 1A is indicated by reference numeral 4A, the first port of the second filter 1B is indicated by reference numeral 3B, and the second port of the second filter 1B is indicated by reference numeral 4B.

[0113] The antenna composite component 101 also includes two distributors 111 and 112 and two antennas 121 and 122. Distributor 111 has a first end 111a, a second end 111b and a third end 111c. Distributor 112 has a first end 112a, a second end 112b and a third end 112c.

[0114] The second port 4A of the first filter 1A is connected to the first terminal 111a of the distributor 111. The second terminal 111b of the distributor 111 is connected to the antenna 121. The third terminal 111c of the distributor 111 is connected to the antenna 122. The distributor 111 has the function of distributing the signal output from the second port 4A of the first filter 1A to the antennas 121 and 122.

[0115] The second port 4B of the second filter 1B is connected to the first terminal 112a of the distributor 112. The second terminal 112b of the distributor 112 is connected to the antenna 121. The third terminal 112c of the distributor 112 is connected to the antenna 122. The distributor 112 has the function of distributing the signal output from the second port 4B of the second filter 1B to the antennas 121 and 122.

[0116] Antennas 121 and 122 are each connected to the second port 4A of the first filter 1A via splitter 111, and to the second port 4B of the second filter 1B via splitter 112.

[0117] Next, the physical structure of the antenna composite component 101 will be described. The antenna composite component 101 includes components for referencing... Figure 14The constituent elements of the antenna composite component 101 described herein are integrated into a main body 150. The first filter 1A, the second filter 1B, the distributors 111 and 112, and the antennas 121 and 122 are integrated into the main body 150. The main body 150 also serves to integrate the constituent elements of the first filter 1A. Similarly, the main body 150 also serves to integrate the constituent elements of the second filter 1B. Furthermore, the main body 150 is shown in the following description. Figure 33 and Figure 34 .

[0118] The main body 150 includes multiple stacked dielectric layers, multiple conductor layers formed on the multiple dielectric layers, and multiple vias. See below for reference. Figures 15 to 32 The plurality of dielectric layers and the plurality of conductor layers constituting the main body 150 will be described. In this embodiment, the main body 150 has 55 stacked dielectric layers. Hereinafter, these 55 dielectric layers will be referred to as the first layer to the fifty-fifth layer from bottom to top. In addition, the first layer to the fifty-fifth layer will be indicated by reference numerals 151 to 205.

[0119] Figure 15 This indicates the patterned surface of the first dielectric layer 151. Multiple conductor layers are formed on the patterned surface of the dielectric layer 151. These conductor layers include conductor layers 511A and 511B. Furthermore, multiple vias are formed on the dielectric layer 151, each connected to one of the conductor layers. These vias include specific vias 51T1A and 51T1B, each connected to conductor layers 511A and 511B. Figure 15 The image depicts multiple first circles and multiple second circles located inside the first circles. The multiple first circles represent multiple conductor layers, and the multiple second circles represent multiple vias.

[0120] Figure 16 This indicates the patterned surface of the second dielectric layer 152. Conductor layers 521A, 521B, and 1521 are formed on the patterned surface of the dielectric layer 152. Specific vias 51T1A and 51T1B formed in the dielectric layer 151 are connected to conductor layers 521A and 521B, respectively. Multiple vias formed in the dielectric layer 151 (excluding the specific vias 51T1A and 51T1B) are connected to conductor layer 1521. Additionally, two specific vias 52T1A and 52T1B are formed on the dielectric layer 152, respectively, connecting to conductor layers 521A and 521B, and multiple vias connecting to conductor layer 1521. Figure 16 In the diagram, multiple circles depicted within the conductor layer 1521 represent multiple through holes.

[0121] Figure 17This represents the patterned surfaces of the third to eighth dielectric layers 153 to 158. Each of the dielectric layers 153 to 158 has multiple vias formed. These vias include specific vias 53T1A and 53T1B formed in each of the dielectric layers 153 to 158. Specific vias 52T1A and 52T1B formed in dielectric layer 152 are respectively connected to specific vias 53T1A and 53T1B formed in dielectric layer 153. Figure 17 In the diagram, multiple circles represent multiple vias. Furthermore, in dielectric layers 153-158, adjacent vias are interconnected.

[0122] Figure 18 This indicates the patterned surface of the ninth dielectric layer 159. Conductor layers 591A and 591B are formed on the patterned surface of the dielectric layer 159. Additionally, a plurality of vias are formed in the dielectric layer 159. These vias include two specific vias 59T1A and 59T1B that are respectively connected to specific vias 53T1A and 53T1B formed in the dielectric layer 158. Figure 18 In the diagram, multiple circles represent multiple through holes.

[0123] Figure 19 This indicates the patterned surface of the tenth dielectric layer 160. Resonator conductor layers 601A, 601B, 602A, 602B and conductor layers 603A, 603B, 604A, 604B are formed on the patterned surface of dielectric layer 160. Conductor layers 601A, 601B, 602A, and 602B each have a first end and a second end located on opposite sides of each other. The first end of conductor layer 601A is connected to the first end of conductor layer 602A. The second end of conductor layer 601A is adjacent to conductor layer 603A at a predetermined interval. The second end of conductor layer 602A is adjacent to conductor layer 604A at a predetermined interval. A specific via 59T1A formed in dielectric layer 159 is connected to conductor layer 603A.

[0124] The first end of conductor layer 601B is connected to the first end of conductor layer 602B. The second end of conductor layer 601B is adjacent to conductor layer 603B at a predetermined interval. The second end of conductor layer 602B is adjacent to conductor layer 604B at a predetermined interval. A specific via 59T1B formed in dielectric layer 159 is connected to conductor layer 603B.

[0125] Additionally, multiple vias are formed in the dielectric layer 160. These vias include two specific vias 60T2A and 60T2B, which are respectively connected to the conductor layers 604A and 604B. Figure 19 In the diagram, multiple circles represent multiple through holes.

[0126] Figure 20This indicates the patterned surface of the eleventh dielectric layer 161. Conductor layers 611A and 611B are formed on the patterned surface of the dielectric layer 161. Additionally, a plurality of vias are formed in the dielectric layer 161. These vias include two specific vias 61T2A and 61T2B, respectively connected to specific vias 60T2A and 60T2B formed in the dielectric layer 160. Figure 20 In the diagram, multiple circles represent multiple through holes.

[0127] Figure 21 This indicates the patterned surfaces of dielectric layers 162-167, from the twelfth to the seventeenth layers. Each of dielectric layers 162-167 has a plurality of vias. These vias include specific vias 62T2A and 62T2B formed in each of dielectric layers 162-167. Specific vias 61T2A and 61T2B formed in dielectric layer 161 are connected to specific vias 62T2A and 62T2B formed in dielectric layer 162, respectively. Figure 21 In the diagram, multiple circles represent multiple vias. Furthermore, in dielectric layers 162-167, adjacent vias are interconnected.

[0128] Figure 22 This indicates the patterned surface of the eighteenth dielectric layer 168. Conductor layers 681A, 681B, and 1681 are formed on the patterned surface of dielectric layer 168. Specific vias 62T2A and 62T2B formed in dielectric layer 167 are connected to conductor layers 681A and 681B, respectively. Multiple vias formed in dielectric layer 167 (excluding specific vias 62T2A and 62T2B) are connected to conductor layer 1681.

[0129] Additionally, two specific vias 68T3A and 68T3B, respectively connected to conductor layers 681A and 681B, are formed on the dielectric layer 168, as well as multiple vias connected to conductor layer 1681. Figure 22 In the diagram, the shaded area 168T represents the area where multiple through holes are formed. Preferably, the multiple through holes are arranged in a configuration that is spaced apart from each other at predetermined intervals within area 168T. Furthermore, in the following description... Figure 22 In the same diagram, multiple through holes, in addition to specific through holes, also use the same... Figure 22 The same representation method.

[0130] Figure 23This indicates the patterned surfaces of the nineteenth and twentieth dielectric layers 169 and 170, respectively. Each of the dielectric layers 169 and 170 has a plurality of vias. These vias include specific vias 69T3A and 69T3B formed in each of the dielectric layers 169 and 170. Specific vias 68T3A and 68T3B formed in dielectric layer 168 are connected to specific vias 69T3A and 69T3B formed in dielectric layer 169, respectively. The plurality of vias formed in dielectric layer 168 (excluding specific vias 68T3A and 68T3B) are connected to the plurality of vias formed in dielectric layer 169 (excluding specific vias 69T3A and 69T3B). Figure 23 In the diagram, the shaded area 169T indicates the region where multiple vias are formed. Furthermore, in the dielectric layers 169 and 170, adjacent vias are interconnected.

[0131] Figure 24 This indicates the patterned surface of the twenty-first dielectric layer 171. Conductor layers 711A, 711B, 712A, and 712B are formed on the patterned surface of dielectric layer 171. Each of conductor layers 711A, 711B, 712A, and 712B has a first end and a second end located on opposite sides of each other. A specific via 69T3A formed in dielectric layer 170 is connected to a portion near the first end of conductor layer 711A. The second end of conductor layer 711A is connected to conductor layer 712A. A specific via 69T3B formed in dielectric layer 170 is connected to a portion near the first end of conductor layer 711B. The second end of conductor layer 711B is connected to conductor layer 712B.

[0132] Additionally, a plurality of vias are formed in the dielectric layer 171. These vias include four specific vias 71T4A, 71T4B, 71T5A, and 71T5B. Specific via 71T4A is connected to a portion near the first end of the conductor layer 712A. Specific via 71T5A is connected to a portion near the first end of the conductor layer 712B. Specific via 71T4B is connected to a portion near the second end of the conductor layer 712A. Specific via 71T5B is connected to a portion near the second end of the conductor layer 712B. Figure 24 In the diagram, the shaded area 171T represents the area where multiple through-holes are formed, in addition to the specific through-holes 71T4A, 71T4B, 71T5A, and 71T5B. The area 171T has a shape that surrounds the conductor layers 711A, 711B, 712A, and 712B.

[0133] Figure 25This indicates the patterned surfaces of the twenty-second and twenty-third dielectric layers 172 and 173, respectively. Each of the dielectric layers 172 and 173 has a plurality of vias. These vias include specific vias 72T4A, 72T4B, 72T5A, and 72T5B formed in each of the dielectric layers 172 and 173. The specific vias 71T4A, 71T4B, 71T5A, and 71T5B formed in dielectric layer 171 are respectively connected to the specific vias 72T4A, 72T4B, 72T5A, and 72T5B formed in dielectric layer 172. Figure 25 In the diagram, the shaded area 172T indicates the region where multiple vias are formed, in addition to the specific vias 72T4A, 72T4B, 72T5A, and 72T5B. Furthermore, in the dielectric layers 172 and 173, adjacent vias are interconnected.

[0134] Figure 26 This indicates the patterned surface of the twenty-fourth dielectric layer 174. Conductor layers 741A, 741B, 742A, 742B, and 1741 are formed on the patterned surface of the dielectric layer 174. Specific vias 72T4A, 72T4B, 72T5A, and 72T5B formed in the dielectric layer 173 are connected to conductor layers 741A, 741B, 742A, and 742B, respectively. Multiple vias formed in the dielectric layer 173 (excluding the specific vias 72T4A, 72T4B, 72T5A, and 72T5B) are connected to conductor layer 1741.

[0135] In addition, a plurality of vias are formed in the dielectric layer 174. These vias include four specific vias 74T4A, 74T4B, 74T5A, and 74T5B, which are respectively connected to the conductor layers 741A, 741B, 742A, and 742B. Figure 26 In the diagram, the shaded areas 174TA and 174TB indicate areas with multiple vias in addition to the four specific vias 74T4A, 74T4B, 74T5A, and 74T5B. Area 174TA has a shape that surrounds conductor layers 741A and 742A. Area 174TB has a shape that surrounds conductor layers 741B and 742B.

[0136] Figure 27This indicates the patterned surfaces of the twenty-fifth and thirty-second dielectric layers 175-182. Each of the dielectric layers 175-182 has a plurality of vias. These vias include specific vias 75T4A, 75T4B, 75T5A, and 75T5B formed in each of the dielectric layers 175-182. Specific vias 74T4A, 74T4B, 74T5A, and 74T5B formed in dielectric layer 174 are connected to specific vias 75T4A, 75T4B, 75T5A, and 75T5B formed in dielectric layer 175, respectively. Figure 27 In the diagram, the shaded areas 175TA and 175TB indicate areas where multiple vias are formed, in addition to the specific vias 75T4A, 75T4B, 75T5A, and 75T5B. Furthermore, in the dielectric layers 175–182, adjacent vias are interconnected.

[0137] Figure 28 This indicates the patterned surface of the thirty-third dielectric layer 183. Conductor layers 831A and 831B are formed on the patterned surface of dielectric layer 183. Specific vias 75T4A and 75T4B formed in dielectric layer 182 are connected to conductor layers 831A and 831B, respectively.

[0138] Additionally, a plurality of vias are formed in the dielectric layer 183. These vias include two specific vias 83T5A and 83T5B, respectively connected to specific vias 75T5A and 75T5B formed in the dielectric layer 182. Figure 28 In the diagram, the shaded areas 183TA and 183TB indicate areas where multiple vias are formed, in addition to the specific vias 83T5A and 83T5B. Area 183TA has a shape that surrounds conductor layer 831A. Area 183TB has a shape that surrounds conductor layer 831B.

[0139] Figure 29 This indicates the patterned surface of the thirty-fourth dielectric layer 184. Conductor layers 841A, 841B, 842A, and 842B are formed on the patterned surface of dielectric layer 184. Specific vias 83T5A and 83T5B formed in dielectric layer 183 are connected to conductor layers 842A and 842B, respectively. Additionally, multiple vias are formed in dielectric layer 184. Figure 29 In the diagram, the shaded areas 184TA and 184TB represent areas where multiple vias are formed. Area 184TA has a shape that surrounds conductor layers 841A and 842A. Area 184TB has a shape that surrounds conductor layers 841B and 842B.

[0140] Figure 30This indicates the patterned surface of the thirty-fifth dielectric layer 185. Conductor layers 851A and 851B are formed on the patterned surface of the dielectric layer 185. Additionally, multiple vias are formed in the dielectric layer 185. Figure 30 In the diagram, the shaded areas 185TA and 185TB indicate areas where multiple vias are formed. Area 185TA has a shape that surrounds conductor layer 851A. Area 185TB has a shape that surrounds conductor layer 851B.

[0141] Figure 31 This indicates the pattern formation surfaces of the thirty-sixth and fifty-fourth dielectric layers 186-204. Multiple vias are formed in each of the dielectric layers 186-204. Figure 31 In the diagram, the shaded areas 186TA and 186TB indicate areas where multiple vias are formed. Furthermore, in the dielectric layers 186–204, adjacent vias are interconnected.

[0142] Figure 32 This indicates the patterning surface of the fifty-fifth dielectric layer 205. Conductor layers 2051 and 2052 are formed on the patterning surface of the dielectric layer 205.

[0143] Figure 33 This refers to the main body 150, which is composed of the first to the fifty-fifth dielectric layers 151 to 205. Figure 34 This refers to the interior of the portion of the main body 150 containing the dielectric layers 151 to 167 (hereinafter referred to as the first portion 1501). Figure 35 This refers to the interior of the portion of the main body 150 containing the dielectric layers 168 to 205 (hereinafter referred to as the second portion 1502). Additionally, Figure 35 The text omits several through holes other than several specific through holes. Figure 36 This is a top view showing the interior of the first part 1501.

[0144] The main body 150 has a bottom surface 150A and a top surface 150B located at both ends of the stacking direction T of the multiple dielectric layers, and four side surfaces 150C to 150F connecting the bottom surface 150A and the top surface 150B. Side surfaces 150C and 150D face opposite sides to each other, and side surfaces 150E and 150F also face opposite sides to each other. Side surfaces 150C to 150F are perpendicular to the bottom surface 150A and the top surface 150B.

[0145] exist Figure 33 The first embodiment is shown in the figure. Figure 9 The X, Y, and Z directions are defined in the diagram. In this embodiment, similar to the first embodiment, a direction parallel to the stacking direction T is designated as the Z direction. For example... Figure 33As shown, bottom surface 150A is located at the end of the main body 150 in the -Z direction. Top surface 150B is located at the end of the main body 150 in the Z direction. Side surface 150C is located at the end of the main body 150 in the -X direction. Side surface 150D is located at the end of the main body 150 in the X direction. Side surface 150E is located at the end of the main body 150 in the -Y direction. Side surface 150F is located at the end of the main body 150 in the Y direction.

[0146] The bottom surface 150A and the top surface 150B face opposite sides. The bottom surface 150A corresponds to the "first surface" in this invention. The top surface 150B corresponds to the "second surface" in this invention.

[0147] The main body 150 is constructed by stacking the first to the fifty-fifth dielectric layers 151 to 205, with the patterned surface of the first dielectric layer 151 forming the bottom surface 150A of the main body 150 and the side of the fifty-fifth dielectric layer 205 opposite to the patterned surface forming the top surface 150B of the main body 150. For example... Figure 34 and Figure 35 As shown, layers are stacked inside the main body 150. Figures 15 to 32 The diagram shows multiple conductor layers and multiple vias.

[0148] In addition to the aforementioned specific through holes Figures 15 to 31 The plurality of vias shown are each connected to a conductor layer overlapping in the stacking direction T or other vias overlapping in the stacking direction T during the stacking of the first to fifty-fifth dielectric layers 151-205. In addition, beyond the aforementioned plurality of specific vias... Figures 15 to 31 The via shown, located within the conductor layer, is connected to the conductor layer.

[0149] The planar shapes (shapes viewed from the Z direction) of regions 168T, 169T, and 173T are the same as the planar shape of region 171T. Multiple vias disposed in each of regions 168T, 169T, 171T, and 173T are arranged in a series to form multiple vias when the first to fifty-fifth dielectric layers 151–205 are stacked.

[0150] The planar shapes of regions 175TA and 183TA to 186TA are the same as those of region 174TA. Multiple vias disposed in each of regions 174TA, 175TA, and 183TA to 186TA are arranged in a series to form multiple vias when the first to fifty-fifth dielectric layers 151 to 205 are stacked.

[0151] The planar shapes of regions 175TB and 183TB to 186TB are the same as those of region 174TB. The multiple vias disposed in each of regions 174TB, 175TB, and 183TB to 186TB are arranged in a series of vias when the first to fifty-fifth dielectric layers 151 to 205 are stacked.

[0152] The following is about Figure 14 The constituent elements of the antenna composite component 101 shown are similar to Figures 15 to 32 The correspondence of the internal components of the main body 150 shown will be explained. First, the components of the first filter 1A, excluding the cavity resonators 21 and 22, will be explained. The first port 3A is composed of a conductor layer 511A. The second port 4A is composed of a conductor layer 681A. In this embodiment, the first port 3A is disposed on the bottom surface 150A of the main body 150. The second port 4A is disposed at a different position from the bottom surface 150A in a direction parallel to the Z direction.

[0153] In the first filter 1A, the resonator 11 of the circuit section 10 is composed of a resonator conductor layer 601A. The resonator 12 of the circuit section 10 is composed of a resonator conductor layer 602A. The capacitor C1 is composed of resonator conductor layers 601A, 603A, 611A and a dielectric layer 160 between these conductor layers. The capacitor C2 is composed of resonator conductor layers 602A, 591A, 604A and a dielectric layer 159 between these conductor layers. The conductor section L1 of path 5 is composed of a via array T1A formed by specific vias 52T1A, 53T1A, and 59T1A. The conductor section L2 of path 5 is composed of a via array T2A formed by specific vias 60T2A, 61T2A, and 62T2A.

[0154] Next, the constituent elements of the second filter 1B, excluding the cavity resonators 21 and 22, will be described. The first port 3B is composed of a conductor layer 511B. The second port 4B is composed of a conductor layer 681B. In this embodiment, the first port 3B is disposed on the bottom surface 150A of the main body 150. The second port 4B is disposed at a position different from the bottom surface 150A in a direction parallel to the Z direction.

[0155] In the second filter 1B, the resonator 11 of the circuit section 10 is composed of a resonator conductor layer 601B. The resonator 12 of the circuit section 10 is composed of a resonator conductor layer 602B. The capacitor C1 is composed of resonator conductor layers 601B, 603B, 611B, and a dielectric layer 160 between these conductor layers. The capacitor C2 is composed of resonator conductor layers 602B, 591B, 604B, and a dielectric layer 159 between these conductor layers. The conductor section L1 of path 5 is composed of a via array T1B including specific vias 52T1B, 53T1B, and 59T1B. The conductor section L2 of path 5 is composed of a via array T2B including specific vias 60T2B, 61T2B, and 62T2B.

[0156] Next, the cavity resonators 21 and 22 of the first filter 1A and the cavity resonators 21 and 22 of the second filter 1B will be described. Figure 36 As shown, the first part 1501 of the main body 150 contains four three-dimensional regions R1A, R1B, R2A, and R2B. Regions R1A, R1B, R2A, and R2B are arranged in the order R2A, R1A, R1B, and R2B, starting from the side 150C and proceeding in a direction parallel to the X direction.

[0157] A first dielectric exists in each region R1A and R1B. The first dielectric is composed of a portion of each of dielectric layers 152 to 167. A second dielectric exists in each region R2A and R2B. The second dielectric is composed of another portion of each of dielectric layers 152 to 167.

[0158] The cavity resonator 21 of the first filter 1A is composed of a conductor (multiple vias and conductor layers 1521, 1681) surrounding a three-dimensional region R1A and a first dielectric (a portion of each of dielectric layers 152 to 167) located in the region R1A. The cavity resonator 22 of the first filter 1A is composed of a conductor (multiple vias and conductor layers 1521, 1681) surrounding a three-dimensional region R2A and a second dielectric (another portion of each of dielectric layers 152 to 167) located in the region R2A.

[0159] The cavity resonator 21 of the second filter 1B is composed of a conductor (multiple vias and conductor layers 1521, 1681) surrounding a three-dimensional region R1B and a first dielectric (a portion of each of dielectric layers 152-167) located in the region R1B. The cavity resonator 22 of the second filter 1B is composed of a conductor (multiple vias and conductor layers 1521, 1681) surrounding a three-dimensional region R2B and a second dielectric (another portion of each of dielectric layers 152-167) located in the region R2B.

[0160] Besides conductor layer 1521, multiple conductors of the cavity resonators 21 and 22 constituting the first filter 1A and the second filter 1B, which constitute cavity resonators 21 and 22, are connected to conductor layer 1521. Multiple vias formed in dielectric layer 151 (excluding specific vias 51T1A and 51T1B) are connected to conductor layer 1521 and to multiple conductor layers (excluding conductor layers 511A and 511B) formed on the patterned surface of dielectric layer 151. Multiple conductor layers (excluding conductor layers 511A and 511B) formed on the patterned surface of dielectric layer 151 are grounded. Therefore, multiple conductors of the cavity resonators 21 and 22 constituting the first filter 1A and the second filter 1B are grounded.

[0161] The cavity resonators 21 and 22 of the first filter 1A are arranged in a direction parallel to the X direction. Similarly, the cavity resonators 21 and 22 of the second filter 1B are also arranged in a direction parallel to the X direction. In this embodiment, in particular, all the cavity resonators of the first and second filters 1A and 1B are arranged in a direction parallel to the X direction.

[0162] Next, distributors 111 and 112 will be described. Distributor 111 is composed of conductor layers 711A and 712A. Conductor layer 711A is connected to conductor layer 681A, which constitutes the second port 4A of the first filter 1A, via specific through-holes 68T3A and 69T3A.

[0163] The distributor 112 is composed of conductor layers 711B and 712B. Conductor layer 711B is connected to conductor layer 681B, which constitutes the second port 4B of the second filter 1B, via specific vias 68T3B and 69T3B.

[0164] Next, antennas 121 and 122 will be described. Antenna 121 is composed of a conductor layer 2051 that functions as a radiating conductor and conductor layers 841A and 851A that function as power supply conductors. Conductor layer 841A extends in a direction parallel to the Y direction. Conductor layer 841A supplies vertically polarized signals to conductor layer 2051. In addition, conductor layer 851A extends in a direction parallel to the X direction. Conductor layer 851A supplies horizontally polarized signals to conductor layer 2051.

[0165] Conductor layer 841A is opposite conductor layer 831A across dielectric layer 183 and is capacitively coupled to conductor layer 831A. Conductor layer 831A is connected to the portion near the first end of conductor layer 712A constituting distributor 111 via specific vias 71T4A, 72T4A, conductor layer 741A, and specific vias 74T4A, 75T4A.

[0166] Conductor layer 851A is opposite conductor layer 842A across dielectric layer 184 and is capacitively coupled to conductor layer 842A. Conductor layer 842A is connected to the portion near the first end of conductor layer 712B constituting distributor 112 via specific vias 71T5A, 72T5A, conductor layer 742A, and specific vias 74T5A, 75T5A, and 83T5A.

[0167] Antenna 122 is composed of a conductor layer 2052 that functions as a radiating conductor and conductor layers 841B and 851B that function as power supply conductors. Conductor layer 841B extends in a direction parallel to the Y direction. Conductor layer 841B supplies vertically polarized signals to conductor layer 2052. Additionally, conductor layer 851B extends in a direction parallel to the X direction. Conductor layer 851B supplies horizontally polarized signals to conductor layer 2052.

[0168] Conductor layer 841B is opposite conductor layer 831B across dielectric layer 183 and is capacitively coupled to conductor layer 831B. Conductor layer 831B is connected to the vicinity of the second end of conductor layer 712A constituting distributor 111 via specific vias 71T4B, 72T4B, conductor layer 741B, and specific vias 74T4B, 75T4B.

[0169] Conductor layer 851B is opposite conductor layer 842B across dielectric layer 184 and is capacitively coupled to conductor layer 842B. Conductor layer 842B is connected to the vicinity of the second end of conductor layer 712B constituting distributor 112 via specific vias 71T5B, 72T5B, conductor layer 742B, and specific vias 74T5B, 75T5B, and 83T5B.

[0170] The other structures, functions, and effects in this embodiment are the same as in the first embodiment.

[0171] [Third Implementation Method]

[0172] Next, the third embodiment of the present invention will be described. First, referring to... Figure 37 A general description of the structure of the antenna composite component 301 in this embodiment will be given. Figure 34 This is a circuit diagram showing the circuit structure of the antenna composite component 301.

[0173] The structure of the antenna composite component 301 in this embodiment differs from that of the antenna composite component 101 in the second embodiment in the following aspects. In the antenna composite component 301, the first and second filters 1A and 1B in the second embodiment are replaced by the first and second filters 301A and 301B.

[0174] The structure of the first filter 301A is the same as that of the first filter 1A, except for the circuit portion 10 and capacitors C1 and C2. Similarly, the structure of the second filter 301B is the same as that of the second filter 1B, except for the circuit portion 10 and capacitors C1 and C2. In this embodiment, the circuit portion 10 of both the first filter 301A and the second filter 301B is line 13. Furthermore, neither the first nor the second filter 301A nor the second filter 301B contains capacitors C1 and C2.

[0175] Next, the differences between the structure of the main body 150 of the antenna composite component 301 and the structure of the main body 150 of the antenna composite component 101 in the second embodiment will be explained. In this embodiment, instead of the second to seventeenth dielectric layers 152 to 167 in the first embodiment, the main body 150 has second to seventeenth dielectric layers 252 to 267.

[0176] Figure 38 This indicates the patterning surface of the second dielectric layer 252. Conductor layers 521C, 521D, and 2521 are formed on the patterning surface of the dielectric layer 252. Specific vias 51T1A and 51T1B are formed in the dielectric layer 151 (see reference). Figure 15 These are respectively connected to conductor layers 521C and 521D. Multiple vias formed in dielectric layer 151 (except for specific vias 51T1A and 51T1B) are connected to conductor layer 2521. Additionally, two specific vias 52T1C and 52T1D are formed on dielectric layer 252, respectively connected to conductor layers 521C and 521D, and multiple vias are formed to connect to conductor layer 2521. Figure 38 In the diagram, multiple circles depicted within the conductor layer 2521 represent multiple vias.

[0177] Figure 39 This represents the patterned surfaces of the third to ninth dielectric layers 253-259. Each of the dielectric layers 253-259 has a plurality of vias formed. These vias include specific vias 53T1C and 53T1D formed in each of the dielectric layers 253-259. Specific vias 52T1C and 52T1D formed in dielectric layer 252 are respectively connected to specific vias 53T1C and 53T1D formed in dielectric layer 253. Figure 39 In the diagram, multiple circles represent multiple vias. Furthermore, in dielectric layers 253-259, adjacent vias are interconnected.

[0178] Figure 40This represents the patterned surface of the tenth dielectric layer 260. Conductor layers 601C and 601D are formed on the patterned surface of the dielectric layer 260. Conductor layers 601C and 601D each have a first end and a second end located on opposite sides of each other. A specific via 53T1C formed in the dielectric layer 259 is connected to a portion near the first end of conductor layer 601C. A specific via 53T1D formed in the dielectric layer 259 is connected to a portion near the first end of conductor layer 601D.

[0179] Additionally, multiple vias are formed in the dielectric layer 260. These vias include two specific vias 60T2C and 60T2D. Specific via 60T2C is connected to a portion near the second end of the conductor layer 601C. Specific via 60T2D is connected to a portion near the second end of the conductor layer 601D. Figure 40 In the diagram, multiple circles represent multiple through holes.

[0180] Figure 41 This represents the patterned surfaces of dielectric layers 261-267, from the eleventh to the seventeenth layer. Each of dielectric layers 261-267 has a plurality of vias. These vias include specific vias 61T2C and 61T2D formed in each of dielectric layers 261-267. Specific vias 60T2C and 60T2D formed in dielectric layer 260 are connected to specific vias 61T2C and 61T2D formed in dielectric layer 261, respectively. Figure 40 In the diagram, multiple circles represent multiple vias. Furthermore, in dielectric layers 261-267, adjacent vias are interconnected.

[0181] Specific vias 61T2C and 61T2D formed in dielectric layer 267 are respectively connected to conductor layers 681A and 681B formed on the patterned surface of dielectric layer 168 (see reference). Figure 22 The multiple vias formed in the dielectric layer 267 (excluding specific vias 61T2C and 61T2D) are connected to the conductor layer 1681 (see reference) formed on the patterned surface of the dielectric layer 168. Figure 22 )connect.

[0182] In this embodiment, the main body 150 consists of a first dielectric layer 151 (refer to...). Figure 15 ), the second to seventeenth dielectric layers 252-267, the eighteenth to fifty-fifth dielectric layers 168-205 (refer to) Figures 22 to 32 It is constructed by stacking layers. In addition, in the main body 150 of this embodiment, a first portion 3501 is included instead of the first portion 1501 in the second embodiment. The first portion 3501 is the portion of the main body 150 that includes dielectric layers 151, 252 to 267.

[0183] Figure 42 This indicates the interior of the first part, 3501.

[0184] The circuit 13 of the first filter 301A is composed of a conductor layer 601C. The conductor layer 601C is connected via a specific via 51T1A (see reference). Figure 15 ), conductor layer 521C and specific vias 52T1C, 53T1C, and conductor layer 511A constituting the first port 3A of the first filter 301A (refer to Figure 15 The conductor layer 601C is connected to the conductor layer 681A (see reference 681A) constituting the second port 4A of the first filter 301A via specific vias 60T2C and 61T2C. Figure 22 )connect.

[0185] In the first filter 301A, the conductor portion L1 of path 5 is composed of a series of vias T1C including specific vias 52T1C and 53T1C. The conductor portion L2 of path 5 is composed of a series of vias T2C including specific vias 60T2C and 61T2C.

[0186] The circuit 13 of the second filter 301B is composed of a conductor layer 601D. The conductor layer 601D is connected via a specific via 51T1B (see reference). Figure 15 ), conductor layer 521D and specific vias 52T1D, 53T1D, and conductor layer 511B constituting the first port 3B of the second filter 301B (refer to Figure 15 The conductor layer 601D is connected to the conductor layer 681B (see reference 60T2D, 61T2C) that constitutes the second port 4B of the second filter 301B via specific vias 60T2D, 61T2C. Figure 22 )connect.

[0187] In the second filter 301B, the conductor portion L1 of path 5 is composed of a series of vias T1D, including specific vias 52T1D and 53T1D. The conductor portion L2 of path 5 is composed of a series of vias T2D, including specific vias 60T2D and 61T2D.

[0188] In this embodiment, the first and second filters 301A and 301B function as band-stop filters, respectively.

[0189] The other structures, functions, and effects in this embodiment are the same as in the second embodiment.

[0190] Furthermore, the present invention is not limited to the embodiments described above and various modifications can be made. For example, the number of cavity resonators can be one or more.

[0191] Based on the above description, it can be seen that various methods and modifications of the present invention can be implemented. Therefore, within the equivalent scope of the claimed technical solutions, the present invention can be implemented in ways other than the above-described preferred methods.

Claims

1. A filter, characterized in that, include: First port; Second port; The path connecting the first port and the second port; The circuit portion located on the path; and In the circuit structure, at least one cavity resonator is coupled to the path from the outside of the path. The circuit portion is a bandpass filter, and includes a first resonator and a second resonator that are sequentially arranged and coupled to each other from the first port side in the circuit structure. The path includes a conductor portion disposed on the circuit structure between the first port or the second port and the circuit portion. The at least one cavity resonator is not coupled to the circuit portion in terms of circuit structure, but is coupled to the conductor portion and coupled to the path.

2. The filter as described in claim 1, characterized in that: The at least one cavity resonator is composed of a conductor surrounding a three-dimensional region and a dielectric located in the region.

3. The filter as described in claim 1, characterized in that: The at least one cavity resonator constitutes a band-stop filter.

4. The filter as described in claim 1, characterized in that: The conductor portion is disposed within the at least one cavity resonator and extends in one direction. The conductor portion is located at a position offset from the center of gravity of the at least one cavity resonator when viewed from the one direction.

5. The filter as described in claim 1, characterized in that: The at least one cavity resonator is a plurality of cavity resonators.

6. The filter as described in claim 5, characterized in that: The plurality of cavity resonators includes a first cavity resonator coupled to the path between the first port and the circuit portion, and a second cavity resonator coupled to the path between the second port and the circuit portion.

7. The filter as described in claim 1, characterized in that: The circuit section refers to the wiring.

8. The filter as described in claim 1, characterized in that: It also includes a main body for integrating the first port, the second port, the path, the circuit portion, and the at least one cavity resonator into a single unit. The main body has a first side and a second side that face opposite to each other.

9. The filter as described in claim 8, characterized in that: The size of the at least one cavity resonator in the direction perpendicular to the first surface is smaller than the size of the at least one cavity resonator in the direction parallel to the first surface.

10. The filter as described in claim 8, characterized in that: The first port is configured on the first surface. The second port is configured at a different position from the first surface in a direction perpendicular to the first surface.

11. The filter as described in claim 8, characterized in that: The first port and the second port are configured on the first surface.

12. An antenna composite component, characterized in that, include: The filter according to claim 1; and The antenna connected to the second port.

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