一种基于金属氧化物薄膜晶体管的鉴频鉴相器
By designing a frequency and phase detector based on an all-N-type MO-TFT, the problem of the lack of P-type MO-TFT in frequency and phase detectors is solved, realizing a low-power, flexible-manufacturing frequency and phase detector suitable for wearable device system circuits.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI UNIV
- Filing Date
- 2023-07-10
- Publication Date
- 2026-07-17
AI Technical Summary
In the existing technology, frequency and phase detectors lack the P-type MO-TFT found in traditional CMOS, making it difficult to reconstruct traditional CMOS circuit systems.
Design a frequency and phase detector based on metal oxide thin film transistors. Employ an edge-triggered circuit using an all-N-type MO-TFT, including a D flip-flop, an inverter, a delay module, and a NAND gate. By adding capacitors in the NAND and NOR gate circuits, the static current is reduced, thereby lowering the overall power consumption.
It achieves a simple fabrication process with low environmental requirements, can be manufactured on flexible substrates, and reduces the overall power consumption of frequency and phase detectors, thus expanding its application in wearable device system circuits.
Smart Images
Figure CN116827337B_ABST