A method of manufacturing a semiconductor device

Abstract

The application provides a manufacturing method of a semiconductor device, comprising the following steps: providing batches of aluminum substrates and sampling inspection, laser etching the back surface of the aluminum substrate of a qualified batch, and cleaning the etched aluminum substrate; printing tin paste on the cleaned aluminum substrate, and then pasting a chip; pasting a resistor-capacitor component at a preset position of the aluminum substrate pasted with the chip; reflow soldering the aluminum substrate pasted with the resistor-capacitor component; performing AOI full inspection on the reflow soldered aluminum substrate, cleaning the aluminum substrate passing the AOI full inspection, and performing first baking; pre-baking the first baked aluminum substrate, and then welding metal wires; performing AOI full inspection on the aluminum substrate after the metal wire welding is completed, and performing second pre-baking on the aluminum substrate passing the detection; packaging and marking the second pre-baked aluminum substrate; performing post-curing and flattening treatment on the marked aluminum substrate, and cutting a rib to form the semiconductor device. The manufacturing method has high cleaning strength on the aluminum substrate, and the product has high reliability.

Description

Technical Field

[0001] This invention relates to the field of semiconductor application technology, and in particular to a method for manufacturing a semiconductor device. Background Technology

[0002] In fully encapsulated power modules based on the IMS substrate architecture, one of the production processes is the cleaning of the aluminum-based copper clad laminate. The main purpose of this process is to clean organic contaminants from the substrate to avoid quality defects caused by inadequate cleaning by the etching plant or secondary contamination during transportation.

[0003] However, current cleaning methods involve using the organic solvent n-propane-C3H7Br and plasma cleaning. When aluminum-based copper-clad laminates are manufactured at the original factory, a protective film is applied to the aluminum surface to prevent contamination or scratches before shipment to the etching plant. During etching, due to the viscosity of the protective film, silicone residue remains on the back of the aluminum substrate during film removal. This silicone penetrates into the oxide pores on the aluminum substrate surface. Since organic solvents and plasma have limited cleaning capabilities, they cannot completely remove the silicone residue. This residue affects the bonding between the molding compound and the aluminum substrate during module molding, leading to delamination and impacting product reliability.

[0004] Therefore, a new method for manufacturing semiconductor devices is needed to solve the above problems. Summary of the Invention

[0005] In view of the shortcomings of the above-mentioned related technologies, the present invention proposes a method for manufacturing semiconductor devices.

[0006] To address the aforementioned technical problems, embodiments of the present invention provide a method for manufacturing a semiconductor device, comprising:

[0007] S10, providing multiple batches of aluminum substrates, sampling inspection of the aluminum substrates, laser etching the back side of the qualified batches of aluminum substrates, and cleaning the laser-etched aluminum substrates with plasma water.

[0008] S20, Solder paste is printed onto the cleaned aluminum substrate;

[0009] S30, IGBT chip, FRD chip and HVIC chip are attached to specific positions on the aluminum substrate after solder paste printing;

[0010] S40, a resistor-capacitor is attached to a predetermined position on the aluminum substrate on which the IGBT chip, the FRD chip and the HVIC chip are attached;

[0011] S50, the aluminum substrate on which the resistors and capacitors are attached is subjected to SMT reflow soldering;

[0012] S60, the aluminum substrate after reflow soldering is subjected to AOI full inspection, the aluminum substrate that passes the AOI full inspection is cleaned, and the cleaned aluminum substrate is baked for the first time.

[0013] S70, the aluminum substrate after the first baking is pre-baked, and the aluminum substrate after the pre-baking is welded with metal wires;

[0014] S80, perform AOI full inspection on the aluminum substrate after the metal wire welding is completed, and perform a second pre-baking on the qualified aluminum substrate;

[0015] S90, the aluminum substrate after the second pre-baking is packaged, and the packaged aluminum substrate is laser-marked;

[0016] S100, the marked aluminum substrate is post-cured and leveled, and the post-cured and leveled aluminum substrate is placed into a forming mold for cutting and forming to form a semiconductor device.

[0017] S110, perform electrical parameter testing on the semiconductor device, perform appearance inspection on the semiconductor device that passes the electrical parameter test, and package, label, and stamp the qualified semiconductor device into the warehouse.

[0018] Preferably, in step S10, the back side of the qualified batch of aluminum substrates is laser-etched, and the laser-etched aluminum substrates are cleaned with plasma water. The specific steps include:

[0019] S1, place the qualified batch of aluminum substrates onto the carrier, then transport the carrier to the laser equipment inspection area, open the side door of the laser equipment, and fix the carrier to the irradiation platform of the laser equipment. After the carrier is fixed to the irradiation platform, close the side door.

[0020] S2, turn on the power of the laser device and adjust the working parameters so that the laser device can irradiate and etch the back of the aluminum substrate according to the preset program. At the same time, the slag suction tube of the laser device removes aluminum slag from the irradiated area of ​​the laser device.

[0021] S3, After etching is completed, turn off the power of the laser equipment and clean the etched aluminum substrate.

[0022] Preferably, in step S3, the etched aluminum substrate is cleaned, and the specific steps include:

[0023] S31, the etched aluminum substrate is placed into the small slot of the cleaning basket, and then the cleaning basket is transported to the cleaning area of ​​the cleaning equipment.

[0024] S32, the cleaning equipment is started to automatically identify and fix the cleaning basket, and the cleaning basket is sequentially transported to the three fine washing tanks of the cleaning equipment for step-by-step fine washing and drying;

[0025] S33, the aluminum substrate is removed from the dried cleaning basket and transported to the solder paste printing equipment.

[0026] Preferably, the aluminum substrate welding metal line after pre-baking in S70 includes:

[0027] S71, weld thick aluminum wires at the preset positions of the aluminum substrate after pre-baking;

[0028] S72, a thin aluminum wire is welded to a predetermined position on the aluminum substrate after the thick aluminum wire has been welded.

[0029] Preferably, the laser device includes a laser device body, a carrier for placing the aluminum substrate, an irradiation platform fixed to the bottom inner side of the laser device body, a power exciter fixed to the top inner side of the laser device body and disposed opposite to the irradiation platform, wherein the power exciter is slidably connected to the laser device body via a movable track, an energy emitter fixed to the bottom of the power exciter, a laser device side door installed on the side of the laser device body, and a slag suction pipe located inside the laser device body for aluminum slag removal.

[0030] Compared with related technologies, the semiconductor device manufacturing method provided by this invention involves laser etching the back side of the aluminum substrate before cleaning. Laser equipment is used to perform laser scanning etching on the back side of the aluminum substrate, removing a thin layer of aluminum from the aluminum surface. Then, the substrate is cleaned with plasma water, which completely removes contaminants such as silicone from the aluminum surface. This effectively ensures the removal of silicone from the aluminum surface, increasing the surface roughness and cleanliness of the aluminum substrate, thereby improving the adhesion between the aluminum surface and the molding compound. Furthermore, cleaning with plasma water reduces environmental pollution. Attached Figure Description

[0031] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0032] Figure 1 This is a schematic flowchart of a method for manufacturing a semiconductor device according to the present invention;

[0033] Figure 2 This is a schematic diagram of the laser etching process for the aluminum substrate in this invention;

[0034] Figure 3This is a schematic diagram of the cleaning process for the aluminum substrate in S3 of the present invention;

[0035] Figure 4 This is a schematic diagram of the laser device in this invention. Detailed Implementation

[0036] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0037] The specific embodiments and examples described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation methods or scope of the present invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein, all of which are within the protection scope of the present invention.

[0038] Please refer to Figure 1-4 As shown, the present invention provides a method for manufacturing a semiconductor device, comprising:

[0039] S10, providing multiple batches of aluminum substrates, sampling inspection of the aluminum substrates, laser etching the back side of the qualified batches of aluminum substrates, and cleaning the laser-etched aluminum substrates with plasma water.

[0040] S20, Solder paste is printed onto the cleaned aluminum substrate;

[0041] S30, IGBT chip, FRD chip and HVIC chip are attached to specific positions on the aluminum substrate after solder paste printing;

[0042] S40, a resistor-capacitor is attached to a predetermined position on the aluminum substrate on which the IGBT chip, the FRD chip and the HVIC chip are attached;

[0043] S50, the aluminum substrate on which the resistors and capacitors are attached is subjected to SMT reflow soldering;

[0044] S60, the aluminum substrate after reflow soldering is subjected to AOI full inspection, the aluminum substrate that passes the AOI full inspection is cleaned, and the cleaned aluminum substrate is baked for the first time.

[0045] S70, the aluminum substrate after the first baking is pre-baked, and the aluminum substrate after the pre-baking is welded with metal wires;

[0046] S80, perform AOI full inspection on the aluminum substrate after the metal wire welding is completed, and perform a second pre-baking on the qualified aluminum substrate;

[0047] S90, the aluminum substrate after the second pre-baking is packaged, and the packaged aluminum substrate is laser-marked;

[0048] S100, the marked aluminum substrate is post-cured and leveled, and the post-cured and leveled aluminum substrate is placed into a forming mold for cutting and forming to form a semiconductor device.

[0049] S110, perform electrical parameter testing on the semiconductor device, perform appearance inspection on the semiconductor device that passes the electrical parameter test, and package, label, and stamp the qualified semiconductor device into the warehouse.

[0050] Specifically, in step S10, the back side of the qualified batch of aluminum substrates is laser-etched, and the laser-etched aluminum substrates are cleaned with plasma water. The steps specifically include:

[0051] S1, place the qualified batch of aluminum substrates onto the carrier, then transport the carrier to the laser equipment inspection area, open the side door of the laser equipment, and fix the carrier to the irradiation platform of the laser equipment. After the carrier is fixed to the irradiation platform, close the side door.

[0052] S2, turn on the power of the laser device and adjust the working parameters so that the laser device can irradiate and etch the back of the aluminum substrate according to the preset program. At the same time, the slag suction tube of the laser device removes aluminum slag from the irradiated area of ​​the laser device.

[0053] S3, After etching is completed, turn off the power of the laser equipment and clean the etched aluminum substrate.

[0054] Furthermore, in step S3, the etched aluminum substrate is cleaned, and the specific steps include:

[0055] S31, the etched aluminum substrate is placed into the small slot of the cleaning basket, and then the cleaning basket is transported to the cleaning area of ​​the cleaning equipment.

[0056] S32, the cleaning equipment is started to automatically identify and fix the cleaning basket, and the cleaning basket is sequentially transported to the three fine washing tanks of the cleaning equipment for step-by-step fine washing and drying;

[0057] S33, the aluminum substrate is removed from the dried cleaning basket and transported to the solder paste printing equipment.

[0058] In this embodiment, the welding of the aluminum substrate metal wire in S70 after pre-baking includes: S71, welding a thick aluminum wire at a preset position of the pre-baked aluminum substrate; S72, welding a thin aluminum wire at the preset position of the aluminum substrate after welding the thick aluminum wire.

[0059] In the above method, laser etching is performed on the back side of the aluminum substrate before cleaning. Laser equipment is used to scan and etch the back side of the aluminum substrate, removing a thin layer of aluminum from the aluminum surface. Then, it is cleaned with plasma water, which completely removes contaminants such as silicone from the aluminum surface. This effectively ensures the removal of silicone, increasing the surface roughness and cleanliness of the aluminum substrate, thereby improving the adhesion between the aluminum surface and the molding compound. Furthermore, cleaning with plasma water reduces environmental pollution.

[0060] It is worth mentioning that the laser device 100 includes a laser device body 207, a carrier 201 for placing the aluminum substrate 200, an irradiation platform 203 fixed to the bottom inner side of the laser device body 207, a power exciter 209 fixed to the top inner side of the laser device body 207 and disposed opposite to the irradiation platform 203, and the power exciter 209 is slidably connected to the laser device body 207 via a movable track 208, an energy emitter 204 fixed to the bottom of the power exciter 209, a laser device side door 206 installed on the side of the laser device body 207, and a slag suction pipe 205 located inside the laser device body 207 for aluminum slag removal.

[0061] Compared with related technologies, the semiconductor device manufacturing method provided by this invention involves laser etching the back side of the aluminum substrate before cleaning. Laser equipment is used to perform laser scanning etching on the back side of the aluminum substrate, removing a thin layer of aluminum from the aluminum surface. Then, the substrate is cleaned with plasma water, which completely removes contaminants such as silicone from the aluminum surface. This effectively ensures the removal of silicone from the aluminum surface, increasing the surface roughness and cleanliness of the aluminum substrate, thereby improving the adhesion between the aluminum surface and the molding compound. Furthermore, cleaning with plasma water reduces environmental pollution.

[0062] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any alterations, equivalent substitutions, or improvements made within the spirit and principles of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A method for manufacturing a semiconductor device, characterized in that, The method for manufacturing the semiconductor device includes: S10, providing multiple batches of aluminum substrates, sampling inspection of the aluminum substrates, laser etching the back side of the qualified batches of aluminum substrates, and cleaning the laser-etched aluminum substrates with plasma water. S20, Solder paste is printed onto the cleaned aluminum substrate; S30, IGBT chip, FRD chip and HVIC chip are attached to specific positions on the aluminum substrate after solder paste printing; S40, a resistor-capacitor is attached to a predetermined position on the aluminum substrate on which the IGBT chip, the FRD chip and the HVIC chip are attached; S50, the aluminum substrate on which the resistors and capacitors are attached is subjected to SMT reflow soldering; S60, the aluminum substrate after reflow soldering is subjected to AOI full inspection, the aluminum substrate that passes the AOI full inspection is cleaned, and the cleaned aluminum substrate is baked for the first time. S70, the aluminum substrate after the first baking is pre-baked, and the aluminum substrate after the pre-baking is welded with metal wires; S80, perform AOI full inspection on the aluminum substrate after the metal wire welding is completed, and perform a second pre-baking on the qualified aluminum substrate; S90, the aluminum substrate after the second pre-baking is packaged, and the packaged aluminum substrate is laser-marked; S100, the marked aluminum substrate is post-cured and leveled, and the post-cured and leveled aluminum substrate is placed into a forming mold for cutting and forming to form a semiconductor device. S110, perform electrical parameter testing on the semiconductor device, perform appearance inspection on the semiconductor device that passes the electrical parameter test, and package, label, and stamp the qualified semiconductor device into the warehouse.

2. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, In step S10, the back side of the qualified batch of aluminum substrates is laser-etched, and the laser-etched aluminum substrates are cleaned with plasma water. The specific steps include: S1, place the qualified batch of aluminum substrates onto the carrier, then transport the carrier to the laser equipment inspection area, open the side door of the laser equipment, and fix the carrier to the irradiation platform of the laser equipment. After the carrier is fixed to the irradiation platform, close the side door. S2, turn on the power of the laser device and adjust the working parameters so that the laser device can irradiate and etch the back of the aluminum substrate according to the preset program. At the same time, the slag suction tube of the laser device removes aluminum slag from the irradiated area of ​​the laser device. S3, After etching is completed, turn off the power of the laser equipment and clean the etched aluminum substrate.

3. The method for manufacturing a semiconductor device as described in claim 2, characterized in that, In step S3, the etched aluminum substrate is cleaned, and the specific steps include: S31, the etched aluminum substrate is placed into the small slot of the cleaning basket, and then the cleaning basket is transported to the cleaning area of ​​the cleaning equipment. S32, the cleaning equipment is started to automatically identify and fix the cleaning basket, and the cleaning basket is sequentially transported to the three fine washing tanks of the cleaning equipment for step-by-step fine washing and drying; S33, the aluminum substrate is removed from the dried cleaning basket and transported to the solder paste printing equipment.

4. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, The aluminum substrate welding metal line after pre-baking in S70 includes: S71, weld thick aluminum wires at the preset positions of the aluminum substrate after pre-baking; S72, a thin aluminum wire is welded to a predetermined position on the aluminum substrate after the thick aluminum wire has been welded.

5. The method for manufacturing a semiconductor device as described in claim 2, characterized in that, The laser device includes a laser device body, a carrier for placing the aluminum substrate, an irradiation platform fixed to the bottom inner side of the laser device body, a power exciter fixed to the top inner side of the laser device body and disposed opposite to the irradiation platform, wherein the power exciter is slidably connected to the laser device body via a movable track, an energy emitter fixed to the bottom of the power exciter, a laser device side door installed on the side of the laser device body, and a slag suction pipe located inside the laser device body for aluminum slag removal.

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