Light-emitting device and its preparation method

Abstract

The light-emitting device includes a conductive layer disposed on a substrate; a first bump seat and a second bump seat disposed on the conductive layer and separated from each other; a first electrode layer disposed on the first bump seat, the conductive layer and the second bump seat, the first electrode layer including a sidewall of the first bump seat, a sidewall of the second bump seat and a first recess between the first bump seat and the second bump seat; a first bump disposed on the first bump seat and a portion of the first recess; a second bump disposed on the second bump seat and a portion of a portion of the first recess; a light-emitting unit formed in the first recess and located between the first bump and the second bump; and a convex lens disposed on the light-emitting unit and perpendicularly aligned with the light-emitting unit, the convex lens having a bottom surface and a convex surface facing the light-emitting unit, and the angle between the bottom surface and the convex surface being in the range of 20° to 50°.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device and a method for manufacturing the same, and more particularly to a light-emitting device comprising a bump and a convex lens and a method for manufacturing the same. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are widely used in displays of high-end electronic devices. However, due to limitations in current technology, the brightness of these OLEDs is restricted. Therefore, for display manufacturers, developing OLEDs with higher brightness has become a key objective. Summary of the Invention

[0003] A light-emitting device includes a substrate, a first conductive layer disposed on the substrate, a first bump seat disposed on the first conductive layer, a second bump seat disposed on the first conductive layer and separate from the first bump seat, and a first electrode layer disposed on the first bump seat, the first conductive layer and the second bump seat. The first electrode layer includes a sidewall of the first bump seat, a sidewall of the second bump seat and a first recess between the first bump seat and the second bump seat. The light-emitting device further includes a first protrusion disposed on at least a portion of the first protrusion seat and the first recess, a second protrusion disposed on at least a portion of the second protrusion seat and the first recess, a light-emitting unit formed in the first recess and located between the first and second protrusions, and a convex lens disposed on the light-emitting unit and perpendicularly aligned with the light-emitting unit. The convex lens has a bottom surface and a convex surface, the convex surface protruding towards the light-emitting unit, and an angle between the bottom surface and the convex surface, the angle ranging from 20° to 50°.

[0004] In some embodiments, the light-emitting device further includes a third bump seat disposed on the first conductive layer and separated from the first bump seat and the second bump seat; and a second recess formed between the second bump seat and the third bump seat, wherein the second bump fills the second recess.

[0005] In some embodiments, when viewed from above, the convex lens overlaps with at least a portion of the first protrusion seat and at least a portion of the second protrusion seat, and is separated from the second recess.

[0006] In some embodiments, the light-emitting device further includes a cover layer disposed on the first protrusion, the second protrusion, and the light-emitting unit; and a filler layer disposed on the cover layer and the convex lens, wherein the convex lens has a first refractive index, the filler layer has a second refractive index, and the difference between the first refractive index and the second refractive index is less than 0.05.

[0007] In some embodiments, the capping layer has a third refractive index, the second refractive index being greater than the first refractive index, and the first refractive index being greater than or equal to the third refractive index.

[0008] A light-emitting device includes a pixel array, a first convex lens, and a second convex lens. The pixel array includes a first pixel and a second pixel spaced apart next to the first pixel, and a recess located between the first pixel and the second pixel. The first convex lens is disposed on the first pixel and perpendicularly aligned with it. The second convex lens is disposed on the second pixel and separate from the first convex lens. The first pixel includes a first bump seat; a second bump seat separate from the first bump seat; a first bump disposed on the first bump seat and covering at least a portion of an upper surface and a sidewall of the first bump seat; a second bump disposed on the second bump seat and covering at least a portion of an upper surface and a sidewall of the second bump seat, the sidewall of the first bump seat and the sidewall of the second bump seat being opposite each other; an electrode layer disposed between the first bump and the second bump; and a light-emitting unit disposed on the electrode layer between the first bump and the second bump. The second pixel includes a third bump seat that is separate from the second bump seat. The recess is disposed between the second bump seat and the third bump seat, and the second bump fills the recess and extends to cover the third bump seat.

[0009] In some embodiments, the electrode layer extends between the first bump and the sidewall of the first bump seat, and between the second bump and the sidewall of the second bump seat.

[0010] In some embodiments, the light-emitting unit is elliptical, and the first convex lens has a bottom surface and a convex surface, the convex surface protruding toward the light-emitting unit, and the bottom surface and the convex surface having an angle ranging from 20° to 50°.

[0011] A method for fabricating a light-emitting device includes forming a first conductive layer on a first substrate; forming a dielectric layer on the first conductive layer; forming a second conductive layer on the dielectric layer; forming a first electrode layer on the second conductive layer; patterning the first electrode layer, the second conductive layer, and the dielectric layer to form a first opening exposing the first conductive layer; forming a second electrode layer on the first opening and the first electrode layer to form a first recess conforming to the first opening, the first recess having a first sidewall and a second sidewall opposite to the first sidewall, and a bottom located between the first sidewall and the second sidewall; forming a first protrusion on the first sidewall of the first recess; forming a second protrusion on the second sidewall of the first recess; forming a light-emitting unit on the bottom of the first recess and between the first protrusion and the second protrusion; forming a convex lens on a second substrate; and disposing the convex lens and the second substrate on the light-emitting unit, and aligning the convex lens perpendicularly with the light-emitting unit. The convex lens has a bottom surface and a convex surface, the convex surface protrudes towards the light-emitting unit, and there is an angle (θ) between the bottom surface and the convex surface, the angle ranging from 20° to 50°.

[0012] In some embodiments, the method of fabricating a light-emitting device further includes forming a capping layer between the light-emitting unit and the convex lens; and forming a filler layer between the capping layer and the convex lens, and in contact with the convex lens. The convex lens has a first refractive index, the filler layer has a second refractive index, and the capping layer has a third refractive index. The second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to the third refractive index. The difference between the first refractive index and the second refractive index is less than 0.05. Attached Figure Description

[0013] To aid readers in achieving the best understanding, it is recommended to refer to the appendix illustrations and their detailed descriptions while reading this disclosure. Please note that, in accordance with industry standard practice, the features are not drawn to scale. In fact, for clarity, the dimensions of the features may have been intentionally enlarged or reduced.

[0014] Figure 1 This is a top view of a light-emitting device according to certain embodiments.

[0015] Figure 2 This is a cross-sectional view of a light-emitting device according to certain embodiments.

[0016] Figure 3 This is a top view of a light-emitting device according to certain embodiments.

[0017] Figure 4 This is a flowchart of a method for preparing a light-emitting device according to certain embodiments.

[0018] Figures 5 to 26The schematic diagram illustrates a light-emitting device at different manufacturing stages according to certain embodiments of the method described herein. Detailed Implementation

[0019] The following disclosure provides many different embodiments or examples for implementing various features of this application. Specific examples of components and configurations are described below to simplify the disclosure. Of course, these are merely examples and are not intended to limit the scope of this application. For example, the following description of forming a first feature on or above a second feature may include embodiments where the first and second features are in direct contact, or embodiments where other features are formed between the first and second features, thus the first and second features are not in direct contact. Furthermore, component symbols and / or letters may be repeated in different examples within this application. This repetition is for simplification and clarity, and does not govern the relationships between different embodiments and / or the architectures discussed.

[0020] Furthermore, this application may use spatial correspondence terms, such as "below," "between," "lower," "lower," "higher," and similar simple descriptions, to describe the relationship between one component or feature and another component or feature in the drawings. Spatial correspondence terms are used to include different orientations of the device in use or operation, other than those described in the drawings. The device may be positioned (rotated 90 degrees or otherwise), and the spatial correspondence descriptions used in this application may be interpreted accordingly.

[0021] Although the numerical ranges and parameters disclosed in this broad disclosure are approximate, the values ​​described in the specific embodiments are as accurate as possible. However, any numerical value inherently includes some error due to the standard deviation obtained from individual test measurements. Furthermore, as herein, "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of an average value as generally considered by those skilled in the art. Except in operational / working examples, or unless specifically indicated, all numerical ranges, quantities, values, and proportions disclosed herein, such as amounts of material, time periods, temperatures, operating conditions, proportions of quantities, and the like, should be understood to be modified by the term "about" in all cases. Therefore, unless stated to the contrary, the numerical parameters of this disclosure and the claims are approximate values ​​that may vary as needed. Each numerical parameter should be interpreted at least according to the number of significant figures reported and with the application of common rounding techniques. In this document, a range may be expressed as from one endpoint to another, or between two endpoints. Unless otherwise stated, all ranges disclosed herein include endpoints.

[0022] Figure 1The diagram shows a top view illustrating a light-emitting device 100. The light-emitting device 100 has a pixel array comprising a plurality of pixels, each pixel including a light-emitting unit 350. The pixel array may, for example but not limited to, include a first pixel and a second pixel spaced apart next to the first pixel, each pixel including a light-emitting unit 350, and a recess 361 located between the first pixel and the second pixel. Viewed from above, the light-emitting unit 350 can be of any shape, such as, but not limited to, a circle, an ellipse, a polygon, etc.

[0023] In some embodiments, the light-emitting device 100 includes a plurality of light-emitting units 350 and a cover layer 381, a filler layer 382, ​​a silicon oxide layer 383, and a second substrate 384 located above the light-emitting units 350. For each light-emitting unit 350, a first recess 331 may be disposed between a plurality of bumps 340, for example, between a first bump 341 and a second bump 342. The first recess 331 provides an array of recesses for accommodating an array of light-emitting units 350. To improve the brightness of the light-emitting device 100, a second recess 361 is provided under the second bump 342, and a convex lens 390 is provided on each light-emitting unit 350. In some embodiments, the plurality of second recesses 361 form an array of recesses for reflecting the light emitted by the array of light-emitting units 350. In some embodiments, the plurality of light-emitting units 350 are separated by a plurality of bumps 340.

[0024] In some embodiments, each convex lens 390 is provided corresponding to each light-emitting unit 350. In some embodiments, viewed from above, the second recess 361 is offset from the plurality of convex lenses 390.

[0025] Figure 2 This is a cross-sectional view of a light-emitting device according to certain embodiments of the present disclosure. Figure 2 For example, along Figure 1 The diagram shows a cross-sectional view of line AA, illustrating only that area. The light-emitting device has several bumps 340 to define a pattern of light-emitting pixels. A first recess 331 is located between two adjacent bumps 340 and provides space to accommodate the light-emitting pixels.

[0026] See Figure 2 The light-emitting device 100 includes a first substrate 110 and a first conductive layer 310 disposed on the first substrate 110. In some embodiments, the first substrate 110 is located below the first conductive layer 310. In some embodiments, the first substrate 110 may include a transistor array configured to correspond to the light-emitting unit 350. The first substrate 110 may include a plurality of capacitors. In some embodiments, more than one transistor is configured to form a circuit with a capacitor and a light-emitting unit 350.

[0027] In some embodiments, the first substrate 110 includes a substrate 111, a dielectric layer 112, and one or more circuits disposed on the substrate 111. In some embodiments, the substrate 111 is a transparent substrate, or at least a portion of it is transparent. In some embodiments, the substrate 111 is a non-flexible substrate, and the material of the substrate 111 may include glass, quartz, low-temperature polysilicon (LTPS), or other suitable materials. In some embodiments, the substrate 111 is a flexible substrate, and the material of the substrate 111 may include transparent epoxy resin, polyimide, polyvinyl chloride, methyl methacrylate, or other suitable materials. The dielectric layer 112 may be disposed on, as needed, such as... Figure 1 110 is shown on the substrate. In some embodiments, the dielectric layer 112 may include silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials.

[0028] In some embodiments, the circuit may include a CMOS circuit, or a plurality of transistors 210 and a plurality of capacitors 220 adjacent to the transistors, wherein the transistors 210 and capacitors 220 are formed on the dielectric layer 112. In some embodiments, the transistors 210 are thin-film transistors (TFTs). Each transistor 210 includes a source / drain region 212 (including at least one source region and one drain region), a channel region 213 between the source / drain regions 212, a gate electrode 214 disposed above the channel region 213, and a gate insulator 215 between the channel region 213 and the gate electrode 214. The gate electrode 214 may be made of a conductive material, such as a metal, silicide, or metal alloy. In some embodiments, the gate electrode 214 may be a composite structure comprising several different layers, which can be distinguished from each other by applying an etchant and observing under a microscope. In some embodiments, the gate electrode 214 and the first metal layer of the interlayer dielectric structure 230 are formed simultaneously. An interlayer dielectric structure 230 is disposed on the circuit or transistor 210. The interlayer dielectric structure 230 may include several layers of metal wires and dielectric material for electrical connection and insulation. The channel region 213 of the transistor 210 may be made of a semiconductor material, such as silicon or other elements selected from Group IV, III, and V. In some embodiments, the interlayer dielectric structure 230 has a thickness between about 100 nm and 1000 nm. In some embodiments, the interlayer dielectric structure 230 has a thickness between about 200 nm and 500 nm.

[0029] In some embodiments, a gate insulator 215 covers the channel region 213 and the source / drain region 212 of the transistor 210, and the gate insulator 215 is disposed between adjacent capacitors 220 and dielectric layer 112. In some embodiments, the gate insulator 215 is formed after the source / drain region 212 and the channel region 213 are formed on the dielectric layer 112. The source / drain region 212 is disposed on the opposite side of the channel region 213 to provide charge carriers. In some embodiments, capacitors 220 are disposed between transistors 210. Each capacitor 220 includes a lower electrode 221, an upper electrode 222, and an insulating layer 223 located between the upper electrode 222 and the lower electrode 221. In some embodiments, the lower electrode 221 and the metal layer of the interlayer dielectric structure 230 on the dielectric layer 112 are formed simultaneously. In some embodiments, the insulating layer 223 is formed on the transistor 210 after the metal layer is formed. In some embodiments, an insulating layer 223 is disposed on and conformally fitted to the lower electrode 221 and the transistor 210. An upper electrode 222 is disposed on the insulating layer 223 in the interlayer dielectric structure 230. The upper electrode 222 may include titanium, aluminum, copper, titanium nitride, combinations thereof, or other suitable materials. In some embodiments, the upper electrode 222 and the metal layer of the interlayer dielectric structure 230 are formed simultaneously. In some embodiments, the upper electrode 222 and the metal layer of the interlayer dielectric structure 230 are formed after the insulating layer 223 is formed.

[0030] In some embodiments, a connection structure 240 electrically connects transistor 210 to capacitor 220. Connection structure 240 includes a plurality of connection paths and a plurality of connection lines. The connection paths may connect to the source / drain region 212 of transistor 210, the gate electrode 214 of transistor 210, and the lower electrode and / or upper electrode 221 and 222 of capacitor 220, and are connected to the connection lines, forming an integrated circuit on substrate 111. Connection structure 240 may include certain connection paths 241, one end of which is connected to the drain region 212 of transistor 210. Connection structure 240 may include certain connection paths 242, one end of which is connected to the source region 212 of transistor 210. Connection structure 240 may include certain connection paths 243, one end of which is connected to the lower electrode 221 of capacitor 220. Connection structure 240 may include certain connection lines 244, one end of which is connected to connection paths 241 respectively. The connection structure 240 may include certain connecting lines (not shown) with one end connected only to connection paths 242. The connection structure 240 may also include certain connecting lines 245 with one end connected to both connection paths 242 and 243. In some embodiments, the connecting lines are formed simultaneously with the metal layer (e.g., a third metal layer) of the interlayer dielectric structure 230. The connection structure 240 is electrically connected to a conductive plug 246. In some embodiments, the conductive plug 246 is electrically connected to connecting lines 244 and / or connection paths 241.

[0031] The data line (not shown in the figure) is located above the connection line of the connection structure 240 and is electrically connected to the source / drain region 212.

[0032] In the light-emitting device 100, a first conductive layer 310 is disposed above the interlayer dielectric structure 230 and the connection structure 240, wherein a portion of the first conductive layer 310 is electrically connected to the connection structure 240. In some embodiments, the first conductive layer 310 has a flat surface like the first substrate 110, and is electrically connected to the transistor 210 and / or the capacitor 220 via a conductive plug 246 and the connection structure 240 (including connection paths 242, 243 and connection lines 245). In some embodiments, the first conductive layer 310 is discontinuously disposed on the first substrate 110. In some embodiments, the first conductive layer 310 is interrupted by a second recess 361.

[0033] In some embodiments, the first conductive layer 310 comprises Al. In some embodiments, the thickness of the first conductive layer 310 ranges from 50 nm to 300 nm.

[0034] In some embodiments, an etch stop layer 311 is disposed between the first substrate 110 and the first conductive layer 310. In some embodiments, a portion of the etch stop layer 311 is exposed from the first conductive layer 310 and contacts the second bump 342. In some embodiments, the etch stop layer 311 comprises a material with an etch selectivity different from that of aluminum. In some embodiments, the etch stop layer 311 comprises Ti. In some embodiments, the thickness of the etch stop layer 311 ranges from 300 nm to 800 nm. In some embodiments, the etch stop layer 311 surrounds the conductive plug 246.

[0035] In some embodiments, the first bump seat 321 and the second bump seat 322 are respectively disposed on the first conductive layer 310 and are separated from each other. In some embodiments, viewed from a cross-sectional perspective, a radius angle σ1 is formed between the sidewall 3212 and the lower surface of the first bump seat 321, the radius angle σ1 ranging from 10 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional perspective, the first bump seat 321 is trapezoidal. In some embodiments, the sidewall 3212 of the first bump seat 321 has an arcuate surface. In some embodiments, the sidewall 3212 of the first bump seat 321 has a concave arcuate surface.

[0036] In some embodiments, the first bump seat 321 comprises a stack of at least three different layers. In some embodiments, the first bump seat 321 includes a dielectric layer 324 disposed on a first conductive layer 310, a second conductive layer 325 disposed on the dielectric layer 324, and a second electrode layer 326 disposed on the second conductive layer 325. In some embodiments, the dielectric layer 324 comprises a dielectric material. In some embodiments, the dielectric layer 324 comprises SiN. In some embodiments, the thickness of the dielectric layer 324 is less than the thickness of the first conductive layer 310, for example, having a thickness ranging from 5 nm to 50 nm. In some embodiments, the second conductive layer 325 comprises aluminum. In some embodiments, the thickness of the second conductive layer 325 is greater than the thickness of the dielectric layer 324, for example, having a thickness ranging from 50 nm to 300 nm. In some embodiments, the thickness of the first conductive layer 310 is greater than the thickness of the second conductive layer 325. In some embodiments, the second electrode layer 326 is transparent. In some embodiments, the second electrode layer 326 comprises an electrode material, such as, but not limited to, indium tin oxide (ITO), molybdenum, or a combination thereof. In some embodiments, the thickness of the second electrode layer 326 ranges from 5 nm to 50 nm.

[0037] In some embodiments, viewed in cross-sectional view, a radius angle σ2 is sandwiched between the first sidewall 3222 and the lower surface of the second bump seat 322, the radius angle σ2 ranging from 10 degrees to 90 degrees. In some embodiments, viewed in cross-sectional view, the second bump seat 322 is trapezoidal. In some embodiments, the first sidewall 3222 of the second bump seat 322 has an arcuate surface. In some embodiments, the first sidewall 3222 of the second bump seat 322 has a concave arcuate surface. In some embodiments, the second bump seat 322 comprises a stack of at least three different layers. In some embodiments, the second bump seat 322 comprises a dielectric layer 324 disposed on a first conductive layer 310, a second conductive layer 325 disposed on the dielectric layer 324, and a second electrode layer 326 disposed on the second conductive layer 325. In some embodiments, the second bump seat 322 comprises the same stacking structure as the first bump seat 321. In some embodiments, the second protrusion seat 322 has the same height as the first protrusion seat 321. In some embodiments, the widths of the second protrusion seat 322 and the first protrusion seat 321 may be the same or different.

[0038] In the light-emitting device 100, a first electrode layer 330 is disposed on a first protrusion seat 321, a second protrusion seat 322, and a first conductive layer 310 between the first protrusion seat 321 and the second protrusion seat 322. In some embodiments, the first electrode layer 330 is continuously disposed on the first protrusion seat 321, the first conductive layer 310, and the second protrusion seat 322. In some embodiments, the first electrode layer 330 is in contact with the first protrusion seat 321, the first conductive layer 310, and the second protrusion seat 322. In some embodiments, the first electrode layer 330 is in contact with the first conductive layer 310 between the first protrusion seat 321 and the second protrusion seat 322. In some embodiments, the first electrode layer 330 is in contact with the sidewall 3212 and the upper surface 3211 of the first protrusion seat 321. In some embodiments, the first electrode layer 330 is in contact with the first sidewall 3222 and the upper surface 3221 of the second protrusion seat 322.

[0039] In some embodiments, the first electrode layer 330 is transparent. In some embodiments, the first electrode layer 330 comprises an electrode material, such as, but not limited to, indium tin oxide (ITO), molybdenum, or a combination thereof. In some embodiments, the thickness of the first electrode layer 330 ranges from 5 nm to 50 nm. In some embodiments, the thickness of the first electrode layer 330 may be the same as or different from the thickness of the second electrode layer 326. In some embodiments, the refractive index of the first electrode layer 330 is different from the refractive index of the second electrode layer 326. In some embodiments, the first electrode layer 330 and the second electrode layer 326 comprise electrode materials with different crystal phases; by configuring materials with different crystal phases and different refractive indices, the brightness of the light-emitting device 100 is increased.

[0040] In some embodiments, the first electrode layer 330 includes a first recess 331 located between a first bump seat 321 and a second bump seat 322. In some embodiments, the first recess 331 is located on a sidewall 3212 of the first bump seat 321 and a first sidewall 3222 of the second bump seat 322. In some embodiments, the first recess 331 has a first sidewall 332 and a second sidewall 333 opposite to the first sidewall 332, and a bottom 334 located between the first sidewall 332 and the second sidewall 333. In some embodiments, the first sidewall 332 of the first recess 331 is disposed on the sidewall 3212 of the first bump seat 321, and the second sidewall 333 of the first recess 331 is disposed on the first sidewall 3222 of the second bump seat 322. In some embodiments, the bottom 334 of the first recess 331 is in contact with the first conductive layer 310.

[0041] In the light-emitting device 100, a first protrusion 341 and a second protrusion 342 are respectively provided on the two opposite sidewalls 332 and 333 of the first recess 331. The first protrusion 341 and the second protrusion 342 are separated from each other. In some embodiments, the first protrusion seat 321 and the second protrusion seat 322 are used to mount the protrusion 340 thereon. In some embodiments, the first protrusion 341 is disposed on the first protrusion seat 321 and covers at least a portion of the first sidewall 332 of the first recess 331 of the first electrode layer 330. In some embodiments, the first protrusion 341 covers the upper surface 3211 and the sidewall 3212 of the first protrusion seat 321. The first protrusion 341 and the second protrusion 342 each have a curved surface protruding from the first substrate 110. In some embodiments, the protrusion 340 serves as a pattern definition layer. In some embodiments, the area between the first protrusion 341 and the second protrusion 342 is configured to accommodate the light-emitting unit 350. In some embodiments, the first bump 341 and / or the second bump 342 comprises a photosensitive material. In some embodiments, the first bump 341 and / or the second bump 342 comprises a light-absorbing material. In some embodiments, the first bump 341 and / or the second bump 342 comprises a light-transmitting material. In some embodiments, the first bump 341 and / or the second bump 342 does not contain fluorine. In some embodiments, the first bump 341 and the second bump 342 comprise the same material. In some embodiments, the thickness T1 of the first bump 341 (corresponding to the distance from the upper surface of the first electrode layer 330 on the first bump seat 321 to the apex of the first bump 341) ranges from 100 nm to 500 nm.

[0042] In some embodiments, the second bump 342 is disposed on the second bump seat 322 and covers at least a portion of the second sidewall 333. In some embodiments, the second bump 342 covers the upper surface 3221 and the sidewall 3222 of the second bump seat 322. In some embodiments, the first electrode layer 330 is disposed between the first bump 341 and the second bump 342, and extends between the first bump 341 and the sidewall 3212 of the first bump seat 321, and extends between the second bump 342 and the first sidewall 3222 of the second bump seat 322. In some embodiments, the thickness T2 of the second bump 342 (corresponding to the distance from the upper surface of the first electrode layer 330 on the second bump seat 322 to the apex of the second bump 342) ranges from 100 nm to 500 nm.

[0043] In the light-emitting device 100, a light-emitting unit 350 is formed on the bottom 334 of the first recess 331 and located between the first protrusion 341 and the second protrusion 342. In some embodiments, the light-emitting unit 350 is conformal to the first recess 331. In some embodiments, the light-emitting unit 350 is in contact with the first protrusion 341 and the second protrusion 342. In some embodiments, the upper surface of the light-emitting unit 350 is higher than the upper surface 3211 of the first protrusion seat 321 and lower than the apex of the first protrusion 341. When the upper surface of the light-emitting unit 350 is lower than the apex of the first protrusion 341, the light-emitting device 100 is less prone to wire breakage and facilitates lateral light emission from the light-emitting unit 350.

[0044] In some embodiments, the light-emitting unit 350 includes a carrier injection layer 351. The carrier injection layer 351 is disposed on the exposed surface of the bottom surface 334 of the first recess 331 of the first electrode layer 330. The carrier injection layer 351 is lining along the bottom surface 334. More specifically, the region between the first bump 341 and the second bump 342 is configured as the effective light-emitting area of ​​the light-emitting unit 350. In some embodiments, each light-emitting unit 350 has an individual carrier injection layer 351. In some embodiments, the carrier injection layer 351 is in contact with the bottom surface 334 of the first recess 331 of the first electrode layer 330. In some embodiments, the carrier injection layer 351 is in contact with the first bump 341 and the second bump 342. In some embodiments, the carrier injection layer 351 is for hole injection or electron injection. In some embodiments, the carrier injection layer 351 comprises an organic material.

[0045] In some embodiments, the light-emitting unit 350 includes a carrier transport layer 352 (or a first-type carrier transport layer). A carrier injection layer 351 is disposed below the carrier transport layer 352. In some embodiments, the carrier transport layer 352 is lined along the carrier injection layer 351. Each light-emitting unit has an individual carrier transport layer 352. In some embodiments, the carrier transport layer 352 is used for hole transport or electron transport. In some embodiments, the carrier transport layer 352 is in contact with the carrier injection layer 351. In some embodiments, the carrier transport layer 352 is in contact with a first bump 341 and a second bump 342. In some embodiments, the carrier transport layer 352 comprises an organic material.

[0046] In some embodiments, the light-emitting unit 350 includes an organic light-emitting (EM) layer 353. In some embodiments, the EM layer 353 covers the carrier transport layer 352. In some embodiments, the EM layer 353 is lined along the carrier transport layer 352. In some embodiments, the EM layer 263 is configured to emit a color, such as red, green, or blue. In some embodiments, the EM layer 263 includes an organic light-emitting material.

[0047] In some embodiments, the light-emitting unit 350 includes a carrier transport layer 354 (or a type II carrier transport layer). In some embodiments, the carrier transport layer 354 (or a type II carrier transport layer) is disposed on the organic light-emitting layer 353. In some embodiments, the carrier transport layer 354 may be a hole transport layer or an electron transport layer. In some embodiments, the carrier transport layer 354 and the carrier transport layer 352 are each configured with opposite valence states. In some embodiments, the carrier transport layer 354 comprises an organic material.

[0048] In some embodiments, the light-emitting unit 350 includes a second electrode 355. In some embodiments, the second electrode 355 is disposed on the organic carrier transport layer 354. In some embodiments, the second electrode 355 extends to the side surfaces of the first bump 341 and the second bump 342. The second electrode 355 may be a metallic material, such as Ag, Mg, etc. In some embodiments, the second electrode 355 includes ITO or IZO (indium zinc oxide). In some embodiments, each light-emitting unit 350 has an independent second electrode 355. In some embodiments, a plurality of light-emitting units 350 share a common second electrode 355.

[0049] The light-emitting device 100 further includes a second recess 361, which is separate from the first recess 331. In some embodiments, the second recess 361 is used to reflect light emitted by the light-emitting unit 350, thereby increasing the brightness of the light-emitting device 100. The second recess 361 is formed between the second bump seat 322 and the third bump seat 323, and the second bump 342 fills the second recess 361. In some embodiments, the third bump seat 323 is disposed on the first conductive layer 310 and is separate from the first bump seat 321 and the second bump seat 322. In some embodiments, the second bump seat 322 is located between the first bump seat 321 and the third bump seat 343.

[0050] In some embodiments, viewed in cross-sectional view, a radius angle σ3 is formed between the sidewall 3232 and the lower surface of the third bump seat 323, the radius angle σ3 ranging from 10 degrees to 90 degrees. In some embodiments, viewed in cross-sectional view, the third bump seat 323 is trapezoidal. In some embodiments, the sidewall 3232 of the third bump seat 323 has an arcuate surface. In some embodiments, the sidewall 3232 of the third bump seat 323 has a concave arcuate surface. In some embodiments, the third bump seat 323 comprises a stack of at least three different layers. In some embodiments, the third bump seat 323 comprises a dielectric layer 324 disposed on a first conductive layer 310, a second conductive layer 325 disposed on the dielectric layer 324, and a second electrode layer 326 disposed on the second conductive layer 325. In some embodiments, the third bump seat 323 comprises the same stacking structure as the first bump seat 321. In some embodiments, the third protrusion seat 323 has the same height as the first protrusion seat 321 or the second protrusion seat 322. In some embodiments, the width of the third protrusion seat 323 may be the same as or different from that of the first protrusion seat 321 or the second protrusion seat 322.

[0051] In some embodiments, the first electrode layer 330 is disposed on the upper surface 3221 of the second protrusion seat 322 and the upper surface 3231 of the third protrusion seat 323. In some embodiments, the first electrode layer 330 is not disposed in the second recess 361. In some embodiments, the first electrode layer 330 does not contact the second sidewall 3223 of the second protrusion seat 322 and the sidewall 3232 of the third protrusion seat 323. The first sidewall 3222 and the second sidewall 3223 of the second protrusion seat 322 are respectively located on opposite sides of the second protrusion seat 322. In some embodiments, the second sidewall 3223 of the second protrusion seat 322 has an arcuate surface. In some embodiments, the second sidewall 3223 of the second protrusion seat 322 has a concave arcuate surface.

[0052] In some embodiments, the light emitted by the light-emitting unit 350 includes lateral light emission. The light passes through the second protrusion 342 and enters the second recess 362, and then exits the second recess 361 after being reflected by the second sidewall 3223 of the second protrusion seat 322 and the sidewall 3232 of the third protrusion seat 323. In some embodiments, a second protrusion seat 322 is provided between the second recess 361 and the first recess 331. In some embodiments, a second protrusion 342 is also provided between the second recess 361 and the first recess 331. In some embodiments, the distance between the second recess 361 and the first recess 331 used to house the light-emitting unit 350 is not particularly limited, as long as the second recess 361 allows the light emitted by the light-emitting unit 350 to be reflected through the second recess 361, or can increase the brightness of the light-emitting device 100.

[0053] In some embodiments, the depth of the second recess 361 is greater than that of the first recess 331. In some embodiments, the second recess 361 extends into the space between the first conductive layers 310. In some embodiments, the second recess 361 is surrounded by the first electrode layer 330, the second bump seat 322, the third bump seat 323, and the first conductive layer 310. In some embodiments, the bottom of the second recess 361 is an etch stop layer 311.

[0054] The second protrusion 342 is disposed on the second protrusion seat 322 and in the second recess 361. In some embodiments, the second protrusion 342 is disposed on the second protrusion seat 322 and the third protrusion seat 323, and in the second recess 361. In some embodiments, the second protrusion 342 covers at least a portion of the upper surface 3221 and the first sidewall 3222 of the second protrusion seat 322, and also covers the second sidewall 3223 of the second protrusion seat 322. In some embodiments, the second protrusion 342 contacts at least a portion of the upper surface 3221 and the first sidewall 3222 of the second protrusion seat 322, and also contacts the second sidewall 3223 of the second protrusion seat 322. In some embodiments, the second protrusion 342 contacts the upper surface 3231 and the sidewall 3232 of the third protrusion seat 323. In some embodiments, the second bump 342 extends into the second recess 361 and contacts the etch stop layer 311.

[0055] In some embodiments, the light-emitting device 100 further includes a third conductive layer 370 disposed on the light-emitting unit 350. In some embodiments, the third conductive layer 370 is disposed on the second electrode 355. In some embodiments, the third conductive layer 370 is disposed on the first bump 341, the second bump 342, and the light-emitting unit 350. In some embodiments, the third conductive layer 370 is conformal to the light-emitting unit 350, the first bump 341, and the second bump 342. In some embodiments, the third conductive layer 370 comprises Ag, Mg, or combinations thereof. In some embodiments, the third conductive layer 370 and the second electrode 355 comprise materials with different crystal phases; by configuring materials with different crystal phases and different refractive indices, the brightness of the light-emitting device 200 is increased. In some embodiments, the third conductive layer 370 comprises a multilayer structure, which may be, for example, but not limited to, a combination of an Ag layer (not shown) and a Mg layer (not shown). The thickness of the third conductive layer 370 ranges from 20 Å to 500 Å.

[0056] In some embodiments, the light-emitting device 100 further includes a cover layer 381 disposed on the first protrusion 341, the second protrusion 342, and the light-emitting unit 350. In some embodiments, the cover layer 381 comprises an organic material. In some embodiments, the transmittance of the cover layer 381 is greater than 99%. In some embodiments, the upper surface of the cover layer 381 is flat.

[0057] In some embodiments, a filler layer 382 is further disposed on the cover layer 381. In some embodiments, the cover layer 381 is located between the light-emitting unit 350 and the filler layer 382. In some embodiments, the filler layer 382 comprises a resin material. In some embodiments, the transmittance of the filler layer 382 is greater than 99%.

[0058] In some embodiments, a convex lens 390 is disposed on and perpendicularly aligned with the light-emitting unit 350, allowing light emitted from the light-emitting unit 350 to pass through the convex lens 390. In some embodiments, the convex lens 390 has a bottom surface 391 and a convex surface 392, the convex surface 392 protruding from the bottom surface 391 toward the light-emitting unit 350 and surrounded by a filler layer 382. In some embodiments, the bottom surface 391 of the convex lens 390 is coplanar with the upper surface of the filler layer 382.

[0059] In some embodiments, viewed from above, the convex lens 390 overlaps with at least a portion of the first protrusion seat 321 and at least a portion of the second protrusion seat 322. In some embodiments, viewed from above, the convex lens 390 overlaps with at least a portion of the sidewall 3212 of the first protrusion seat 321 and at least a portion of the first sidewall 3222 of the second protrusion seat 322. In some embodiments, viewed from above, the convex lens 390 overlaps with at least a portion of the upper surface 3221 of the second protrusion seat 322. In some embodiments, viewed from above, the convex lens 390 is separate from the second recess 361, and no convex lens 390 is disposed above the second recess 361.

[0060] In some embodiments, the bottom surface 391 and the convex surface 392 of the convex lens 390 form an angle θ, which ranges from 20° to 50°. When the angle is greater than 50°, the increased thickness of the convex lens 390 results in a larger overall thickness of the light-emitting device 100, and the convex lens 390 easily reflects the light emitted by the light-emitting unit, leading to stray light in the light-emitting device and a gradual decrease in the brightness of the light-emitting device. When the angle is less than 20°, the refracting effect of the convex lens is poor. In some embodiments, the angle θ ranges from 20° to 40°. In some embodiments, the convex lens 390 comprises an organic material.

[0061] In some embodiments, one convex lens 390 is spaced apart from another convex lens 390, and each convex lens 390 corresponds to a different light-emitting unit 350. In some embodiments, at least a portion of the filler layer 382 is located between adjacent convex lenses 390. In some embodiments, viewed from above, the second recess 361 is located between one convex lens 390 and another convex lens 390.

[0062] In some embodiments, the convex lens 390 has a first refractive index, the filler layer 382 has a second refractive index, and the capping layer 381 has a third refractive index. In some embodiments, the difference between the second and first refractive indices is less than 0.05. In some embodiments, the second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to the third refractive index. In some embodiments, the difference between the first and third refractive indices is less than or equal to 0.08. In some embodiments, the first refractive index ranges from 1.45 to 1.55. In some embodiments, the second refractive index ranges from 1.51 to 1.6. In some embodiments, the third refractive index ranges from 1.45 to 1.55.

[0063] In some embodiments, the light-emitting device 100 further includes a silicon oxide layer 383 disposed on the filler layer 382 and the convex lens 390, and a second substrate 384 disposed on the silicon oxide layer 383. In some embodiments, the silicon oxide layer 383 is in contact with the bottom surface 391 of the convex lens 390 and the filler layer 382. In some embodiments, the silicon oxide layer 383 comprises silicon dioxide. In some embodiments, the silicon oxide layer 383 has a fourth refractive index. In some embodiments, the second refractive index is greater than the fourth refractive index. In some embodiments, the fourth refractive index is equal to the first refractive index. In some embodiments, the second substrate 384 is a transparent substrate, which may include, for example, but is not limited to, glass.

[0064] Figure 3 This is a top view illustrating a light-emitting device 200. The light-emitting device 200 has a pixel array comprising a plurality of pixels, each pixel including a light-emitting unit 350. The pixel array may, for example but not limited to, include first pixels 201 and second pixels 202 spaced apart next to the first pixels 201. In some embodiments, the pixel array may, for example but not limited to, include a plurality of first pixels 201, a plurality of second pixels 202, and a plurality of third pixels 203 for displaying different colors. Each first pixel 201 includes a light-emitting unit 350G and a convex lens 390G; each second pixel 202 includes a light-emitting unit 350R and a convex lens 390R; and each third pixel 203 includes a light-emitting unit 350B and a convex lens 390B. The light-emitting units 350G, 350R, and 350B can respectively emit light of a first color, a second color, and a third color. For example, the light-emitting unit 350G can be used to display green, the light-emitting unit 350R can be used to display red, and the light-emitting unit 350B can be used to display blue.

[0065] In some embodiments, the pixel array is arranged from left to right as a second pixel 202, a first pixel 201, followed by a third pixel 203, but is not limited thereto. In some embodiments, the plurality of first pixels 201 are dispersed relative to each other, the plurality of third pixels 203 are clustered together, and the arrangement of the second pixels 202 is not particularly limited. The arrangement of various pixels can also be changed according to design or other considerations. Furthermore, although Figure 3 The illustrated light-emitting units 350G, 350R, and 350B are elliptical in shape, but other shapes may also be used. Furthermore, the number of pixel types can be, but is not limited to, three types of pixels; the number of pixels can be changed, and other appropriate types of pixels can be used to display different colors, such as yellow, white, or other colors.

[0066] In some embodiments, the light-emitting units 350G, 350R, and 350B are elliptical in shape, each having a major axis D1 and a minor axis D2, where the major axis D1 ranges from 3.4 to 4 μm and the minor axis D2 ranges from 2.5 to 3.1 μm. In some embodiments, the major axis D1 and minor axis D2 of the light-emitting units 350G, 350R, and 350B are each 3.7 μm. In some embodiments, the convex lenses 390G, 390R, and 390B are circular or elliptical in shape, or other shapes may be used. The dimensions and shapes of the convex lenses 390G, 390R, and 390B may be the same or different.

[0067] In some embodiments, convex lens 390G has a major axis D3 and a minor axis D4, where the major axis D3 ranges from 4.7 to 5.3 μm and the minor axis D4 ranges from 4.1 to 4.7 μm. In some embodiments, the major axis D3 of convex lens 390G is 5.0 μm and the minor axis D4 is 4.4 μm. In some embodiments, convex lens 390R has a major axis D5 and a minor axis D6, where the major axis D5 ranges from 4.5 to 5.1 μm and the minor axis D6 ranges from 4.1 to 4.7 μm. In some embodiments, the major axis D5 of convex lens 390R is 4.8 μm and the minor axis D6 is 4.4 μm. In some embodiments, convex lens 390B has a major axis D7 and a minor axis D8, where the major axis D7 ranges from 4.6 to 5.1 μm and the minor axis D8 ranges from 4.0 to 4.7 μm. In some embodiments, the major axis D7 of the convex lens 390B is 4.8 μm and the minor axis D8 is 4.3 μm.

[0068] In some embodiments, the distance D9 between adjacent pixels, such as, but not limited to, the distance D9 between the first pixel 201 and the second pixel 202, the distance D9 between the second pixel 202 and the third pixel 203, or the distance D9 between the first pixel 201 and the third pixel 203, may be the same or different. The range of distance D9 is 0.5-1.1 μm. In some embodiments, the distance D9 between adjacent pixels is 0.8 μm.

[0069] To further explain the contents of this disclosure, Figure 4 This is a flowchart of a method 400 for preparing a light-emitting device according to certain embodiments. A method 400 for fabricating a light-emitting device, such as light-emitting device 100, includes the following steps: 401 forming a first conductive layer on a first substrate; 402 forming a dielectric layer on the first conductive layer; 403 forming a second conductive layer on the dielectric layer; 404 forming a second electrode layer on the second conductive layer; 405 patterning the second electrode layer, the second conductive layer, and the dielectric layer to form a first opening exposing the first conductive layer; 406 forming the first electrode layer on the first opening and the second electrode layer to form a first recess conforming to the first opening, the first recess having a first sidewall and a second sidewall opposite to the first sidewall, and a bottom located between the first sidewall and the second sidewall; 407 forming a first protrusion on the first sidewall of the first recess; 408 forming a second protrusion on the second sidewall of the first recess; 409 forming a light-emitting unit at the bottom of the first recess and between the first protrusion and the second protrusion; 410 forming a convex lens on the second substrate; and 411 disposing the convex lens and the second substrate on the light-emitting unit, and aligning the convex lens perpendicularly to the light-emitting unit. It should be noted that... Figure 4 The flowchart shown is for illustrative purposes only and is not intended to limit the steps to a specific order. Depending on the implementation, steps 401 to 411 may be arranged in different orders.

[0070] Reference Figures 5 to 26 , Figures 5 to 26 This illustration depicts a method for preparing a light-emitting device according to certain embodiments of the present disclosure. Figures 5 to 26 for Figure 1 Cross-sectional view along line AA in the middle.

[0071] Step 401 includes forming a first conductive layer 310 on a first substrate 110. For example... Figure 5 As shown, the first substrate 110 may include a substrate 111, a dielectric layer 112, a transistor 210, a capacitor 220, an interlayer dielectric structure 230, a connection structure 240, and a planar layer 320 (shown in...). Figure 3 The components described above are similar to those in the light-emitting device 100 above, and therefore will not be repeated here. Figure 6As shown, a first conductive layer 310 is formed on a first substrate 110. In some embodiments, the first conductive layer 310 is formed on the top surface of the first substrate 110 using deposition techniques, such as, but not limited to, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, plating, laser-induced thermal imaging (LITI), inkjet printing, shadow masking, or wet coating. In some embodiments, method 400 further includes forming an etch stop layer 311 between the first substrate 110 and the first conductive layer 310, and forming a conductive plug 246 surrounded by the etch stop layer 311 and electrically connected to the first conductive layer 310 and the first substrate 110. In some embodiments, a deposition technique is used to form an etch stop layer 311 on the top surface of the first substrate 110.

[0072] like Figure 7 As shown, step 402 includes forming a dielectric layer 324 on the first conductive layer 310, step 403 includes forming a second conductive layer 325 on the dielectric layer 324, and step 404 includes forming a second electrode layer 326 on the second conductive layer 325. In some embodiments, the dielectric layer 324 is formed on the top surface of the first conductive layer 310 using a deposition technique. In some embodiments, the second conductive layer 325 is formed on the top surface of the dielectric layer 324 using a deposition technique. In some embodiments, the second electrode layer 326 is formed on the top surface of the second conductive layer 325 using a deposition technique. In some embodiments, forming the first bump seat 321, the second bump seat 322, and the third bump seat 323 includes forming the dielectric layer 324, the second conductive layer 325, and the second electrode layer 326 sequentially stacked on the first conductive layer 310.

[0073] like Figures 8 to 12 As shown, step 405 includes patterning the second electrode layer 326, the second conductive layer 325, and the dielectric layer 324 to form a first opening 504 exposing the first conductive layer 310. In some embodiments, such as Figure 8As shown, a photoresist layer 501 is formed above the second electrode layer 326. In some embodiments, the photoresist layer 501 is coated on the top surface of the second electrode layer 326. In some embodiments, the photoresist layer 501 is formed by spin coating or spray coating. In some embodiments, the photoresist layer 501 may contain positive or negative photoresist. In some embodiments, the photoresist layer 501 may contain organic and inorganic materials. In some embodiments, the organic materials may include, for example, phenolic resin, epoxy resin, ethers, amines, rubber, acrylic acid, acrylic resin, acrylic epoxy resin, and melamine acrylate. In some embodiments, the inorganic materials may include, for example, metal oxides and silicides. In some embodiments, the photoresist layer 501 may comprise a single layer composed of one material. In some embodiments, the photoresist layer 501 may comprise several layers composed of several different materials, such as an organic material layer stacked on an inorganic material layer.

[0074] In some embodiments, an etching process is further used to pattern the photosensitive layer 501, causing a portion of the photosensitive layer 501 to be removed, while the remaining portion of the photosensitive layer 501 is used for positioning, such as... Figure 2 The first bump seat 321 and the second bump seat 322 are shown, and the portion of the photosensitive layer 501 that has been removed is used in subsequent steps to set, for example... Figure 2 The light-emitting unit 350 is shown. In some embodiments, the remaining portion of the photosensitive layer 501 is also used for positioning such as... Figure 2 The third bump seat 323 shown, the portion of the photosensitive layer 501 that has been removed, is also used to form, in subsequent steps, such as Figure 2 The second recess 361 is shown. In some embodiments, the pattern of the photosensitive layer 501 is designed to form an array of first bump seats 321 and second bump seats 322.

[0075] In some implementations, such as Figure 9 As shown, patterning is performed by dry etching to pattern the photosensitive layer 501, removing a portion of the photosensitive layer 501, a portion of the second electrode layer 326, and a portion of the second conductive layer 325 to form the first groove 502 and the second groove 503. In some embodiments, viewed from a cross-sectional perspective, a radius angle σ4 is formed between the sidewall and the lower surface of the photosensitive layer 501, with the radius angle σ4 ranging from 60 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional perspective, the first groove 502 and the second groove 503 are U-shaped. In some embodiments, viewed from a cross-sectional perspective, a radius angle σ5 is formed between the sidewall and the lower surface of the second conductive layer 325, with the radius angle σ5 ranging from 10 degrees to 90 degrees.

[0076] In some implementations, such as Figure 10As shown, patterning is performed by wet etching, which removes a portion of the photosensitive layer 501, a portion of the second electrode layer 326, and a portion of the second conductive layer 325, forming a first groove 502 and a second groove 503. In some embodiments, the patterned second electrode layer 326 and second conductive layer 325 undergo undercut (not shown). In some embodiments, viewed from a cross-sectional view, a radius angle σ6 is formed between the sidewall and the lower surface of the photosensitive layer 501, with the radius angle σ6 ranging from 45 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional view, the radius angle σ6 ranges from 55 degrees to 80 degrees. In some embodiments, viewed from a cross-sectional view, a radius angle σ7 is formed between the sidewall and the lower surface of the second conductive layer 325, with the radius angle σ7 ranging from 10 degrees to 90 degrees. In some embodiments, the radius angle σ5 formed by the dry etching process is larger than the radius angle σ7 formed by the wet etching process.

[0077] In some implementations, such as Figure 11 As shown, a portion of the dielectric layer 324 is further removed using an etching process, leaving the second electrode layer 326, the second conductive layer 325, and the dielectric layer 324 to form a first bump seat 321 and a second bump seat 322 separated from each other, and forming a first opening 504 between the first bump seat 321 and the second bump seat 322. In some embodiments, a portion of the first conductive layer 310 is exposed between the first bump seat 321 and the second bump seat 322. In some embodiments, a portion of the dielectric layer 324 is removed using a dry etching process. In some embodiments, viewed from a cross-sectional perspective, a radius angle σ1 is formed between the sidewall 3212 and the lower surface of the first bump seat 321, the radius angle σ1 ranging from 10 degrees to 90 degrees. In some embodiments, viewed from a cross-sectional perspective, a radius angle σ2 is formed between the sidewall 3222 and the lower surface of the second bump seat 322, the radius angle σ2 ranging from 10 degrees to 90 degrees.

[0078] In some embodiments, the patterned second electrode layer 326, second conductive layer 325, and dielectric layer 324 further form a third bump seat 323 separate from the second bump seat 322, and form a second opening 505 between the second bump seat 322 and the third bump seat 323. The first opening 504 and the second opening 505 are separate from each other. In some embodiments, the first opening 504 and the second opening 505 are formed simultaneously. In some embodiments, a portion of the first conductive layer 310 is exposed between the third bump seat 323 and the second bump seat 322. In some embodiments, viewed in cross-sectional view, a radius angle σ3 is formed between the sidewall 3232 and the lower surface of the third bump seat 323, the radius angle σ3 ranging from 10 degrees to 90 degrees. In some embodiments, a first bump seat 321, a second bump seat 322, and a third bump seat 323, separated from each other, are formed on the first conductive layer 310.

[0079] In some implementations, such as Figure 12 As shown, the photosensitive layer 501 is removed. In some embodiments, after removing the photosensitive layer 501, the upper surface 3211 of the first protrusion seat 321, the upper surface 3221 of the second protrusion seat 322, and the upper surface 3231 of the third protrusion seat 323 are exposed. In some embodiments, the first opening 504 and the second opening 505 have the same depth.

[0080] like Figure 13 As shown, step 406 includes forming a first electrode layer 330 on the first opening 504 and the second electrode layer 326 to form a first recess 331 conformally to the first opening 504. The first recess 331 has a first sidewall 332 and a second sidewall 333 opposite to the first sidewall 332, and a bottom 334 located between the first sidewall 332 and the second sidewall 333. In some embodiments, the first electrode layer 330 is also formed on the second opening 505. In some embodiments, conformal deposition is performed to form the first electrode layer 330 on the first opening 504, the upper surface 3211 and the side surface 3212 of the first bump seat 321, and the upper surface 3221, the first sidewall 3222, and the second sidewall 3223 of the second bump seat 322.

[0081] In some embodiments, method 400 further includes conformally depositing a first electrode layer 330 on the upper surface 3231 and side surface 3232 of the second opening 505 and the third bump seat 323. In some embodiments, the first electrode layer 330 has a recess 360 formed between the second opening 505 and the third bump seat 323, the recess 360 being conformally formed with the second opening 505. In some embodiments, the first electrode layer 330 is formed sequentially on the first opening 504, the second opening 505, the first bump seat 321, the second bump seat 322, and the third bump seat 323.

[0082] In some implementations, such as Figures 14 to 16 As shown, method 400 further includes removing the first electrode layer 330 located at the second opening 505. In some embodiments, the recess 360 of the first electrode layer 330 is removed. In some embodiments, such as Figure 14 As shown, a photosensitive layer 510 is formed above the first electrode layer 330, and the photosensitive layer 510 located in the recess 360 is removed. In some embodiments, the photosensitive layer 510 is coated on the top surface of the first electrode layer 330 and in the first recess 331 and recess 360, and the photosensitive layer 510 is patterned so that the recess 360 of the first electrode layer 330 is exposed from the photosensitive layer 510. In some embodiments, the photosensitive layer 510 is formed by spin coating or spray coating. In some embodiments, the photosensitive layer 510 may contain positive photoresist or negative photoresist. In some embodiments, the photosensitive layer 510 is patterned using an etching process so that a portion of the photosensitive layer 510 is removed, and the removed portion of the photosensitive layer 510 is used in subsequent steps to form, for example, Figure 2 The second recess 361 is shown.

[0083] In some implementations, such as Figure 15 As shown, a groove 511 is formed by patterning through an etching process to remove the first electrode layer 330 exposed from the photosensitive layer 510. In some embodiments, the groove 511 is formed by patterning through wet etching to remove the recess 360 of the first electrode layer 330.

[0084] In some implementations, such as Figure 16 As shown, the photosensitive layer 510 is removed, exposing the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323, as well as a portion of the first metal layer 310. In some embodiments, the groove 511 is surrounded by the first electrode layer 330, the second bump seat 322, the third bump seat 323, and the first metal layer 310.

[0085] In some implementations, such as Figures 17-18 As shown, method 400 further includes patterning the first conductive layer 310 exposed from the groove 511 to form the second recess 361. In some embodiments, such as Figure 17As shown, a photosensitive layer 520 is formed above the first electrode layer 330, and the photosensitive layer 520 located above the first electrode layer 330 in the groove 511 is removed. In some embodiments, the photosensitive layer 520 contacts the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323. In some embodiments, the photosensitive layer 510 is coated on the top surface of the first electrode layer 330 and in the first recess 331 and the groove 511, and the photosensitive layer 520 is patterned so that the first electrode layer 330 in the groove 511 is exposed from the photosensitive layer 520, and then the first conductive layer 310 located in the groove 511 is removed. In some embodiments, the photosensitive layer 520 is formed by spin coating or spray coating. In some embodiments, the photosensitive layer 520 may contain positive photoresist or negative photoresist.

[0086] In some embodiments, patterning is performed by dry etching to remove the first conductive layer 310 exposed from the recess 511. In some embodiments, the first conductive layer 310 is patterned such that the depth of the second recess 361 is greater than the depth of the first recess 331. In some embodiments, the first conductive layer 310 is patterned such that the etch stop layer 311 is exposed from the second recess 361.

[0087] In some implementations, such as Figure 18 As shown, the photosensitive layer 520 is removed to form the second recess 361. In some embodiments, after removing the photosensitive layer 520, the second sidewall 3223 of the second bump seat 322 and the sidewall 3232 of the third bump seat 323, a portion of the first metal layer 310, and a portion of the etch stop layer 311 are exposed.

[0088] like Figure 19 As shown, step 407 includes forming a first protrusion 341 on the first sidewall 332 of the first recess 331, and step 408 includes forming a second protrusion 342 on the second sidewall 333 of the first recess 331. In some embodiments, the first protrusion 341 and the second protrusion 342 are formed simultaneously. In some embodiments, the bottom 334 of the first recess 331 is exposed between the first protrusion 341 and the second protrusion 342. In some embodiments, the second protrusion 342 is also formed in the second recess 361 and on the third protrusion seat 323. In some embodiments, the second protrusion 342 fills the second recess 361.

[0089] like Figure 20As shown, step 409 includes forming a light-emitting unit 350 between the bottom 334 of the first recess 331 of the first electrode layer 330 and between the first bump 341 and the second bump 342. In some embodiments, conformal deposition is used to form the light-emitting unit 350. In some embodiments, the light-emitting unit 350 is in contact with the first electrode layer 330, the first bump 341, and the second bump 342. In some embodiments, a carrier injection layer 351, a carrier transport layer 352, an organic light-emitting layer 353, a carrier transport layer 354, and a second electrode 355 are sequentially formed on the bottom 334.

[0090] In some implementations, such as Figure 21 As shown, method 400 further includes forming a capping layer 381 on the first bump 341, the second bump 342, and the light-emitting unit 350. In some embodiments, the capping layer 381 is formed using a deposition technique. In some embodiments, the upper surface of the capping layer 381 is planarized.

[0091] In some implementations, such as Figure 22-24 As shown, step 410 includes forming a convex lens 390 on the second substrate 384. In some embodiments, a plurality of convex lenses 390 are formed on the second substrate 384. The plurality of convex lenses 390 are arranged spaced apart from each other. In some embodiments, such as Figure 22 As shown, a silicon oxide layer 383 is formed on the second substrate 384, and a lens material layer 393 is formed on the silicon oxide layer 383. In some embodiments, a lens material is coated on the silicon oxide layer 383 to form the lens material layer 393. The lens material includes an organic material, such as, but not limited to, the commercially available product SU8. In some embodiments, such as... Figure 23 As shown, the patterned lens material layer 393 is such that a portion of the lens material layer 393 is removed. In some embodiments, the portion of the lens material layer 393 corresponding to the second recess 361 is removed. In some embodiments, the patterned lens material layer 393 includes the location corresponding to the light-emitting unit 350. In some embodiments, such as... Figure 24 As shown, the lens material layer 393 is formed into a convex lens 390. In some embodiments, the lens material layer 393 is formed into a convex lens 390 having a bottom surface 391 and a convex surface 392, with an angle θ between the bottom surface and the convex surface, the angle ranging from 20° to 50°. In some embodiments, the patterned lens material layer 393 is subjected to a photoacid reaction and thermal reflow to form the convex lens 390.

[0092] In some implementations, such as Figure 25As shown, method 400 further includes forming a filler layer 382 on the capping layer 381. In some embodiments, the filler layer 382 is formed on the capping layer 381 using a deposition technique or a coating method. In some embodiments, the filler layer 382 formed on the capping layer 381 is not yet fully cured.

[0093] In some implementations, such as Figure 26 As shown, step 411 includes placing the convex lens 390 and the second substrate 384 on the light-emitting unit 350, and aligning the convex lens 390 perpendicularly to the light-emitting unit 350. In some embodiments, the second substrate 384 is flipped so that the convex surface 392 of the convex lens 390 protrudes from the bottom surface 391 toward the light-emitting unit 350, and then the convex lens 390 under the second substrate is perpendicularly aligned with the corresponding light-emitting unit 350, so that the convex lens 390 and the filler layer 382 approach each other until the convex surface 392 is in complete contact with the filler layer 382. In some embodiments, after the filler layer 382 surrounds the convex surface 392 of the convex lens 390, the filler layer 382 is cured. In some embodiments, the filler layer 382 is in contact with the convex surface 392 of the convex lens 390 and the silicon oxide layer 383. In some embodiments, method 400 produces as shown in the figure. Figure 2 The light-emitting device 100 shown.

[0094] Therefore, one embodiment of this disclosure provides a light-emitting device, comprising a substrate; a first conductive layer disposed on the substrate; a first bump seat disposed on the first conductive layer; a second bump seat disposed on the first conductive layer and separate from the first bump seat; a first electrode layer disposed on the first bump seat, the first conductive layer and the second bump seat, the first electrode layer including a sidewall of the first bump seat, a sidewall of the second bump seat and a first recess between the first bump seat and the second bump seat; a first protrusion... A block is disposed on at least a portion of the first protrusion seat and the first recess; a second protrusion is disposed on at least a portion of the second protrusion seat and the first recess; a light-emitting unit is formed in the first recess and located between the first protrusion and the second protrusion; and a convex lens is disposed on the light-emitting unit and perpendicularly aligned with the light-emitting unit, the convex lens having a bottom surface and a convex surface, the convex surface protruding toward the light-emitting unit, and an angle between the bottom surface and the convex surface, the angle ranging from 20° to 50°.

[0095] One embodiment of this disclosure provides a light-emitting device comprising a pixel array including a first pixel and a second pixel spaced apart next to the first pixel, and a recess located between the first pixel and the second pixel; a first convex lens disposed on the first pixel and perpendicularly aligned with the first pixel; and a second convex lens disposed on the second pixel and separate from the first convex lens (390a). The first pixel includes a first bump seat; a second bump seat separate from the first bump seat; a first bump disposed on the first bump seat and covering at least a portion of an upper surface and a sidewall of the first bump seat; a second bump disposed on the second bump seat and covering at least a portion of an upper surface and a sidewall of the second bump seat, the sidewall of the first bump seat and the sidewall of the second bump seat being opposite each other; an electrode layer disposed between the first bump and the second bump; and a light-emitting unit disposed on the electrode layer between the first bump and the second bump. The second pixel includes a third bump seat that is separate from the second bump seat. The recess is disposed between the second bump seat and the third bump seat, and the second bump fills the recess and extends to cover the third bump seat.

[0096] One embodiment of this disclosure provides a method for fabricating a light-emitting device, comprising: forming a first conductive layer on a first substrate; forming a dielectric layer on the first conductive layer; forming a second conductive layer on the dielectric layer; forming a first electrode layer on the second conductive layer; patterning the first electrode layer, the second conductive layer, and the dielectric layer to form a first opening exposing the first conductive layer; forming a second electrode layer on the first opening and the first electrode layer to form a first recess conforming to the first opening, the first recess having a first sidewall and a second sidewall opposite to the first sidewall, and located at... A bottom between the first sidewall and the second sidewall; a first protrusion is formed on the first sidewall of the first recess; a second protrusion is formed on the second sidewall of the first recess; a light-emitting unit is formed at the bottom of the first recess and between the first protrusion and the second protrusion; a convex lens is formed on a second substrate; and the convex lens and the second substrate are disposed on the light-emitting unit, and the convex lens is perpendicularly aligned with the light-emitting unit, wherein the convex lens has a bottom surface and a convex surface, the convex surface protrudes toward the light-emitting unit, and there is an angle between the bottom surface and the convex surface, the angle ranging from 20° to 50°.

[0097] The foregoing outlines some features of the embodiments, thus enabling those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures to achieve the same purpose and / or the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure.

Claims

1. A light-emitting device, comprising: One substrate; A first conductive layer is disposed on the substrate; A first bump seat is disposed on the first conductive layer; A second bump seat is disposed on the first conductive layer and is separate from the first bump seat; A third bump seat is disposed on the first conductive layer and is separate from the first bump seat and the second bump seat; A first electrode layer is disposed on the first bump seat, the first conductive layer and the second bump seat. The first electrode layer includes a sidewall of the first bump seat, a sidewall of the second bump seat and a first recess between the first bump seat and the second bump seat. A first protrusion is disposed on the first protrusion seat and at least a portion of the first recess; A second protrusion is disposed on the second protrusion seat and at least a portion of the first recess; A light-emitting unit is formed in the first recess and located between the first protrusion and the second protrusion; and A convex lens is disposed on the light-emitting unit and is perpendicularly aligned with the light-emitting unit. The convex lens has a bottom surface and a convex surface. The convex surface protrudes towards the light-emitting unit, and there is an angle between the bottom surface and the convex surface, the angle ranging from 20° to 50°.

2. The light-emitting device as claimed in claim 1, further comprising: A second recess is formed between the second protrusion seat and the third protrusion seat, and the second protrusion fills the second recess.

3. The light-emitting device of claim 2, wherein, viewed from above, the convex lens overlaps with at least a portion of the first protrusion seat and at least a portion of the second protrusion seat, and is separated from the second concave portion.

4. The light-emitting device as claimed in claim 1, further comprising: A cover layer is disposed on the first protrusion, the second protrusion, and the light-emitting unit; and A filler layer is disposed between the cover layer and the convex lens. The convex lens has a first refractive index, the filler layer has a second refractive index, and the difference between the second refractive index and the first refractive index is less than 0.

05.

5. The light-emitting device of claim 4, wherein the covering layer has a third refractive index, the second refractive index being greater than the first refractive index, and the first refractive index being greater than or equal to the third refractive index.

6. A light-emitting device, comprising: A pixel array includes a first pixel, a second pixel spaced apart next to the first pixel, and a recess located between the first pixel and the second pixel; A first convex lens is disposed on the first pixel and is perpendicularly aligned with the first pixel; and A second convex lens is disposed on the second pixel and is separate from the first convex lens. The first pixel includes: First protrusion seat; A second protrusion seat separate from the first protrusion seat; A first protrusion is disposed on the first protrusion seat and covers at least a portion of an upper surface and a side wall of the first protrusion seat; A second protrusion is disposed on the second protrusion seat and covers at least a portion of an upper surface and a side wall of the second protrusion seat, wherein the side wall of the first protrusion seat is disposed opposite to the side wall of the second protrusion seat; An electrode layer is disposed between the first bump and the second bump; and A light-emitting unit is disposed on the electrode layer between the first bump and the second bump. The second pixel includes a third bump seat that is separate from the second bump seat. The recess is disposed between the second bump seat and the third bump seat, and the second bump fills the recess and extends to cover the third bump seat.

7. The light-emitting device of claim 6, wherein the electrode layer extends between the first protrusion and the sidewall of the first protrusion seat, and extends between the second protrusion and the sidewall of the second protrusion seat.

8. The light-emitting device as claimed in claim 6, wherein the light-emitting unit is elliptical, and the first convex lens has a bottom surface and a convex surface, the convex surface protruding toward the light-emitting unit, and the bottom surface and the convex surface having an included angle, the included angle being in the range of 20° to 50°.

9. A method for preparing a light-emitting device, comprising: A first conductive layer is formed on a first substrate; A dielectric layer is formed on the first conductive layer; A second conductive layer is formed on the dielectric layer; A first electrode layer is formed on the second conductive layer; The first electrode layer, the second conductive layer and the dielectric layer are patterned to form a first bump seat, a second bump seat and a third bump seat that are separated from each other on the first conductive layer and expose a first opening in the first conductive layer between the first bump seat and the second bump seat. A second electrode layer is formed on the first opening and the first electrode layer to form a first recess that conforms to the first opening. The first recess has a first sidewall and a second sidewall opposite to the first sidewall, and a bottom located between the first sidewall and the second sidewall. A first protrusion is formed on the first sidewall of the first recess; A second protrusion is formed on the second sidewall of the first recess; A light-emitting unit is formed at the bottom of the first recess and between the first protrusion and the second protrusion; A convex lens is formed on a second substrate; and The convex lens and the second substrate are disposed on the light-emitting unit, and the convex lens is perpendicularly aligned with the light-emitting unit. The convex lens has a bottom surface and a convex surface, the convex surface protrudes towards the light-emitting unit, and there is an angle between the bottom surface and the convex surface, the angle ranging from 20° to 50°.

10. The method for preparing a light-emitting device as described in claim 9, further comprising: A covering layer is formed between the light-emitting unit and the convex lens; and A filler layer is formed between the cover layer and the convex lens, and contacts the convex lens. in, The convex lens has a first refractive index, the filler layer has a second refractive index, and the cover layer has a third refractive index. The second refractive index is greater than the first refractive index, and the first refractive index is greater than or equal to the third refractive index. The difference between the first refractive index and the second refractive index is less than 0.05.

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