An asymmetric electrode interface-based non-temperature difference dependent ionic thermoelectric device, a preparation method and application thereof

Abstract

The application provides a non-temperature difference dependent ionic thermoelectric device based on an asymmetric electrode interface and a preparation method and application thereof, and relates to the technical field of thermoelectric materials. Specifically, the application comprises electrodes with different interface properties and an ionic conductor connected between the electrodes; wherein the ionic conductor is in direct contact with the electrodes. In the application, a novel non-temperature difference dependent ionic thermoelectric device is manufactured by constructing an asymmetric ion adsorption and desorption interface. There is no complex molecular synthesis and structure design, and the application has universality. Experiments prove that the device can realize series connection of the device through simple electrode position arrangement, so as to achieve the purpose of voltage signal amplification, and thus a module array for high-temperature early warning can be mass-produced by means of cheap process. The application provides a new way out for getting rid of the predicament of traditional thermoelectric materials in the scene of Internet of Things sensing without temperature difference and energy supply.

Description

Technical Field

[0001] This invention belongs to the field of thermoelectric materials technology, specifically relating to a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface, its preparation method, and its application. Background Technology

[0002] The Seebeck effect refers to the directional diffusion of electrons or holes within a material under a temperature gradient, thereby generating a voltage across the material's hot and cold ends. In recent years, similar thermoelectric phenomena have been observed in some ionic conductors, such as ionic liquids and ionic gels; the underlying mechanism of this phenomenon is called the Soret effect. The Soret effect involves the thermal diffusion of ions as transport carriers under a temperature gradient, thereby altering the original double-layer electrical structure of the electrodes and resulting in a potential difference between the two electrodes at different temperatures. These two types of thermoelectric conversion mechanisms have become new forms of energy utilization and are commonly used in self-powered thermal sensing materials. Thermoelectric materials based on the Seebeck or Soret effect are highly dependent on temperature difference; however, for miniaturized thermoelectric devices or uniform thermal environments, it is difficult to construct an ideal temperature gradient to induce voltage generation. Limited by the indispensable condition of temperature difference, traditional thermoelectric materials struggle to fully meet practical application requirements, thus restricting the expansion of applications for such functional materials.

[0003] In classical electric double-layer theory, the compact layer specifically adsorbs ions and induces excess surface charge in the electrode phase through short-range electrostatic forces, forming a potential on the electrode surface. This surface potential is generally considered to be related to temperature, the work function of the electrode material, and the strength of the interaction between ions and the electrode. Therefore, as the electrode surface temperature increases, the increased disorder caused by thermal processes leads to desorption and redistribution of ions in the compact layer, thus establishing a new surface potential. For the same electrode interface, the electric double-layer structure formed at the interface is identical, and the change in surface potential with temperature is synchronous, making it difficult to achieve temperature-free power generation. In other words, constructing a thermally induced rearrangement process of ions at the electrode interface has become an inherent requirement for developing temperature-free ion thermoelectric materials.

[0004] Therefore, developing a type of thermoelectric conversion device that is not temperature-dependent is of great practical significance, given the difficulties and shortcomings encountered by traditional temperature-dependent thermoelectric materials in practical applications. Constructing an ion system with a heterogeneous electrode interface holds promise for achieving temperature-dependent thermoelectric conversion. Summary of the Invention

[0005] The purpose of this invention is to provide a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface. By utilizing the difference in the interaction between the heterogeneous electrode interface and ions, an asymmetric ion adsorption and desorption process that varies with temperature is generated on the surface of the two electrodes, creating an asymmetric electrode potential, thereby achieving a temperature-independent thermoelectric conversion.

[0006] To achieve the above objectives, the present invention provides a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface, comprising electrodes with different interface properties and an ion conductor connected between the electrodes; wherein the ion conductor is in direct contact with the electrodes.

[0007] In a preferred embodiment, the number of electrodes with different interface properties is two or more; preferably, the number of electrodes with different interface properties is two.

[0008] In a preferred embodiment, the electrodes with different interface properties refer to electrodes made of different materials, or electrodes made of the same material but treated with different interface modifications, resulting in different interfacial tensions and / or work functions of the electrode materials.

[0009] In a preferred embodiment, the electrode material includes inert metal materials such as gold, silver, platinum, copper, titanium, nickel, gallium-indium alloy, or other conductive materials; more preferably, the two electrodes are made of one of gold and silver, gold and platinum, or gold and copper.

[0010] In a preferred embodiment, the different interface modification treatments refer to materials formed by asymmetric ionic modification of a single metal interface, such as modifying the gold electrode interface with 1-ethyl-3-methylimidazolium thiocate ([EMIm]TA) or ethyl thiocate-3-methylimidazolium bromide ([TA-EMIm]Br) by means of sulfur-gold bond interaction. Other interface modification methods and types of modifying ions known to those skilled in the art are also included, as long as they can produce different interfacial tensions and / or work functions of the electrode materials.

[0011] In a preferred embodiment, the ionic conductor includes at least one of ionic liquid, molten salt, electrolyte solution, and ionic gel.

[0012] In a preferred embodiment, the ionic liquid includes at least one of imidazole salts, pyridine salts, quaternary ammonium salts, quaternary phosphonium salts, pyrrolidines, piperidines, and functionalized ionic liquids;

[0013] The molten salt includes ionic compounds in a molten state;

[0014] The electrolyte solution comprises a solute-solution system in which the charge carriers are ions;

[0015] The ion gel comprises a solid-like system in which the charge carriers are ions.

[0016] In a preferred embodiment, the ionic liquid comprises any one or more of 1-octyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([OMIm][TFSI]), 1-octyl-3-methylimidazolium acetate ([OMIm]Ac), 1-ethyl-3-methylimidazolium acetate ([EMIm]Ac), 1-octyl-3-methylimidazolium chloride ([OMIm]Cl), and 1-octyl-3-methylimidazolium hexafluorophosphate ([OMIm][PF6]).

[0017] In this invention, the electrodes with different interfacial properties are all in direct contact with the ionic liquid, enabling the ionic conductor within the ion thermoelectric device to achieve rapid heat exchange with the analyte, thereby ensuring that there is no temperature gradient between the electrodes. By detecting the change in thermal voltage of the ionic conductor through the electrodes and electrochemical equipment, and mapping the open-circuit voltage to temperature, accurate temperature detection can be achieved. Furthermore, the sensing elements can be further integrated to obtain a two-dimensional array ion thermoelectric sensing chip.

[0018] In a preferred embodiment, the response temperature of the ion thermoelectric device is -80 to 300°C.

[0019] Another objective of this invention is to provide a method for fabricating a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface. The method involves directly contacting an ion conductor with electrodes having different interface properties to connect the electrodes. The overall method is simple, easy to operate, and particularly suitable for large-scale industrial production.

[0020] To achieve the above objectives, this invention provides a method for fabricating a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface, specifically comprising the following steps:

[0021] S1 loads the ionic conductor onto the support substrate;

[0022] S2 connects the electrode to the load substrate obtained in step S1 and assembles it into an ion thermoelectric device, wherein the electrode is in direct contact with the ion conductor on the load substrate.

[0023] In a preferred embodiment, in step S1, the loading method includes at least one of capillary, microfluidic chip, liquid tank, and gel material.

[0024] In a preferred embodiment, in step S1, the material of the support matrix includes at least one of ceramics, glass, metal, polymethyl methacrylate, polyethylene, polyvinyl chloride, polypropylene, polycarbonate, and polyurea.

[0025] In a preferred embodiment, in step S1, the specific operation of transferring the ion conductor onto the load substrate can be carried out in a conventional manner known to those skilled in the art. For example, an injection operation can be used, in which the ion conductor is loaded into a syringe and injected into the load substrate; or a drop-coating operation can be used, in which the ion conductor is loaded into a dropper and uniformly added to the load substrate.

[0026] In a preferred embodiment, in step S2, the electrode shape can be a conventional shape known to those skilled in the art, for example, a rectangle with a size of 0.5cm × 1cm; or a cylinder with a diameter of 1-2mm.

[0027] In a preferred embodiment, in step S2, there is a certain spacing between the electrodes. Preferably, the spacing length is 0.2-0.8 cm, and more preferably, the spacing length is 0.5 cm.

[0028] Another objective of this invention is to provide the application of non-temperature-dependent ion thermoelectric devices based on asymmetric electrode interfaces in the fabrication of two-dimensional thermoelectric sensing arrays, that is, by connecting the aforementioned non-temperature-dependent ion thermoelectric devices based on asymmetric electrode interfaces in series, a two-dimensional thermoelectric sensing array can be obtained.

[0029] In a preferred embodiment, the method for fabricating the two-dimensional thermoelectric sensing array includes the following steps:

[0030] 1) Prepare a lower substrate, a middle groove, and an upper substrate of the same size;

[0031] 2) Deposit multiple parallel electrode strips 1 on the upper surface of the lower substrate; using the same method, deposit multiple parallel electrode strips 2 at corresponding positions on the lower surface of the upper substrate.

[0032] 3) Cut out multiple square hollow frames of equal size and with the same spacing from the middle groove;

[0033] 4) Assemble the device by bonding the various components together in the manner of lower substrate - middle groove - upper substrate;

[0034] 5) Multiple small holes are made on the upper surface of the upper substrate, and ion conductors are added to them respectively, so that the electrodes at the corresponding positions of electrode strip 1 and electrode strip 2 can be connected through the ion conductors, and the ion conductors between each slot are not connected to each other.

[0035] 6) By sealing the small hole to encapsulate the device, the two-dimensional temperature sensing array can be obtained.

[0036] In a preferred embodiment, in step 1), the materials of the lower substrate, the intermediate groove, and the upper substrate include acrylic, glass, or other conventional packaging materials known to those skilled in the art.

[0037] In a preferred embodiment, in step 4), the two electrodes at corresponding positions of electrode strip 1 and electrode strip 2 have different interface properties during assembly, that is, the two electrodes are made of different materials, or although the electrodes are made of the same material, they have undergone different interface modification treatments.

[0038] In a preferred embodiment, in step 5), the specific operation of adding the ionic conductor can be carried out in a conventional manner known to those skilled in the art. For example, an injection operation can be used, in which the ionic conductor is loaded into a syringe and injected into the hollow groove; or a drop-coating operation can be used, in which the ionic conductor is loaded into a dropper and evenly dripped into the hollow groove.

[0039] Another objective of this invention is to provide an application of a temperature-differential-dependent ion thermoelectric device based on an asymmetric electrode interface in fire monitoring.

[0040] In a preferred embodiment, the application in fire monitoring specifically includes the following steps:

[0041] 1) Fabricate a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface; connect it to a microcontroller, and connect a signal transceiver chip to the microcontroller to form a signal transmitter;

[0042] 2) Connect the microcontroller, which also has a signal transceiver chip, to the computer to form a signal receiver, and connect the red LED and the buzzer in series to form an early warning module;

[0043] 3) The signal receiver is connected to the alarm module, and the warning threshold is set;

[0044] 4) When a fire breaks out near the signal transmitter, the signal receiver voltage signal will trigger an alarm when it reaches the threshold, thereby achieving the purpose of fire monitoring.

[0045] In a preferred embodiment, in step 3), the warning threshold is 50-150mV, and more preferably, the warning threshold is 80mV.

[0046] In a preferred embodiment, the fire is a forest fire, an industrial fire, or a domestic fire.

[0047] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0048] 1. The ionic conductor material used in this invention has good stability, and its performance changes are caused by the deterioration of the ionic conductor. Moreover, the raw materials used are inexpensive and readily available, and the entire preparation process does not involve expensive equipment or complex processing techniques. The overall preparation method is simple and reliable, and there are no problems of environmental pollution or high processing energy consumption, which can fully meet the needs of large-scale and green industrial production.

[0049] 2. The ion thermoelectric device of this invention does not rely on a temperature gradient; it only requires a uniform temperature field to operate, thereby enabling the construction of miniaturized and precise thermoelectric sensors. Furthermore, the technical solution provided by this invention can operate normally under low-temperature conditions, possessing the potential for temperature sensing under extreme conditions.

[0050] 3. The thermoelectric sensor obtained by this invention is based on voltage-type temperature response, which has better sensitivity than traditional resistance-type temperature sensors.

[0051] 4. The thermoelectric sensor device prepared by the present invention is very convenient for designing sensor groups. By connecting multiple thermoelectric devices in series and in parallel, the sensing performance of the thermoelectric sensing device can be effectively adjusted.

[0052] 5. The thermoelectric sensor device obtained in this invention has low manufacturing cost and is easy to promote, making it very suitable for wide-ranging use in natural environments and effectively improving sensing accuracy. Attached Figure Description

[0053] These and / or other aspects and advantages of the present invention will become clearer and more readily understood from the following detailed description of embodiments of the invention taken in conjunction with the accompanying drawings, wherein:

[0054] Figure 1 The diagram shows the non-temperature-dependent ion thermoelectric device structure prepared in Examples 1-7.

[0055] Figure 2 The voltage-temperature relationship of ion thermoelectric devices using different electrode materials in Examples 1-3 is shown.

[0056] Figure 3 The voltage-temperature relationship of ion thermoelectric devices using different ion conductors in Examples 4-6 is shown.

[0057] Figure 4 The voltage-temperature relationship is shown for the modified gold electrode and the ion thermoelectric device with different ion conductors used in Examples 7-10.

[0058] Figure 5 This is a schematic diagram of the non-temperature-dependent ion thermoelectric device prepared in Example 11.

[0059] Figure 6 This is a schematic diagram of the signal amplification achieved by connecting ion thermoelectric devices in series in Example 12, and the relationship between voltage and temperature.

[0060] Figure 7 This is a physical image of the two-dimensional thermoelectric sensor array without temperature difference in Example 13.

[0061] Figure 8This is a process test diagram of the early fire warning simulation experiment in Example 14. Detailed Implementation

[0062] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. However, it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0063] This invention provides a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface, its preparation method, and its application. This addresses the limitations of existing temperature-dependent thermoelectric materials in practical applications and expands the pathways for non-temperature-dependent hotspot conversion.

[0064] Unless otherwise specified, the technical means used in this invention are conventional means well known to those skilled in the art. All raw materials, reagents, instruments, and equipment used in this invention can be purchased commercially or prepared using existing methods. Unless otherwise specified, all reagents used in this invention are of analytical grade.

[0065] In this embodiment of the invention, the ionic liquids 1-octyl-3-methylimidazolium acetate ([OMIm]Ac), 1-ethyl-3-methylimidazolium acetate ([EMIm]Ac), 1-octyl-3-methylimidazolium chloride ([OMIm]Cl), and 1-octyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([OMIm][TFSI]) were purchased from Lanzhou Zhongke Kaitai Industry and Trade Co., Ltd.

[0066] 1-Ethyl-3-methylimidazolium lipoic acid salt ([EMIm]TA) is a self-made material. The preparation method is as follows: 1-Ethyl-3-methylimidazolium chloride ([EMIm]Cl) and potassium hydroxide are mixed at a mass ratio of 1:0.38, and then added to a mixed solution of water and ethanol at a volume ratio of 60:1. After being dispersed evenly, 1.42 times the mass of 1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) lipoic acid is added, and the solvent is removed by rotary evaporation to obtain the product.

[0067] Ethyl 1-lipoic acid ester-3-methylimidazolium bromide ([TA-EMIm]Br) was prepared in-house. The preparation method involved adding lipoic acid and dicyclohexylcarbodiimide in a 1:1 molar ratio to a suitable amount of dichloromethane to prepare solution 1. Then, adding an equal molar amount of 2-bromoethanol and a small amount of 4-dimethylaminopyridine to a suitable amount of dichloromethane to prepare solution 2. Solution 2 was added dropwise to solution 1, stirred at room temperature for 2 hours, filtered to remove the precipitate, and the concentrated solution was used for the next reaction. The solvent was removed by rotary evaporation, and 1-methylimidazolium in a 3-molar amount (equivalent to lipoic acid) was added and dissolved in a suitable amount of acetonitrile. The reaction was carried out at 60°C under a nitrogen atmosphere for 36 hours, followed by purification to obtain the final product.

[0068] In this embodiment of the invention, the metal electrode material used was purchased from Zhongnuo New Materials Beijing Technology Co., Ltd.

[0069] In the embodiments of the present invention, the encapsulation material used is glass.

[0070] Example 1

[0071] Figure 1 This is a schematic diagram of a temperature-independent ion thermoelectric device. It includes a metal electrode (A)1, a metal electrode (B)4, an ion conductor 2, and an intermediate tank 3. The ion conductor is located between the metal electrodes (A)1 and (B)4, and is in direct contact with both electrodes. The ion conductor 2 is loaded in the intermediate tank 3.

[0072] (1) The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0073] Electrode materials: 1mm diameter wire gold electrode and wire silver electrode;

[0074] Ionic conductor: 1-Octyl-3-methylimidazolium acetate ([OMIm]Ac);

[0075] Material of the intermediate groove (load substrate): glass.

[0076] (2) The specific preparation steps are as follows:

[0077] 1) 1-Octyl-3-methylimidazolium acetate was injected into the intermediate tank.

[0078] 2) Gold and silver wire electrodes are inserted into both sides of the middle groove to form a sensing structure with an electrode spacing of 0.5cm, and then encapsulated.

[0079] Example 2

[0080] (1) The difference between this embodiment and Embodiment 1 is that the electrode materials used are different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0081] Electrode materials: 1mm diameter wire gold electrode and wire platinum electrode;

[0082] Ionic conductor: 1-Octyl-3-methylimidazolium acetate ([OMIm]Ac);

[0083] Material of the middle channel: glass.

[0084] (2) The preparation method is the same as in Example 1.

[0085] Example 3

[0086] (1) The difference between this embodiment and Embodiment 1 is that the electrode materials used are different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0087] Electrode materials: 1mm diameter wire gold electrode and wire copper electrode;

[0088] Ionic conductor: 1-Octyl-3-methylimidazolium acetate ([OMIm]Ac);

[0089] Material of the middle channel: glass.

[0090] (2) The preparation method is the same as in Example 1.

[0091] The non-temperature-dependent ion thermoelectric devices prepared in Examples 1-3 were tested, and the results are as follows: Figure 2 As shown in the figure, the thermoelectric sensing chips without temperature difference prepared in Examples 1-3 can all achieve temperature-controlled output of voltage signals. By changing the electrode material, the degree of voltage signal change with temperature can be effectively adjusted. Specifically, the thermoelectric coefficient of the thermoelectric sensing chip in Example 1 is 10.2 mV / K, the thermoelectric coefficient of the thermoelectric sensing chip in Example 2 is 1.7 mV / K, and the thermoelectric coefficient of the thermoelectric sensing chip in Example 3 is 1.5 mV / K.

[0092] Example 4

[0093] (1) The difference between this embodiment and Embodiment 1 is that the ion conductor used is different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0094] Electrode materials: 1mm diameter wire gold electrode and wire silver electrode;

[0095] Ionic conductor: 1-Octyl-3-methylimidazolium chloride ([OMIm]Cl);

[0096] Material of the middle channel: glass.

[0097] (2) The preparation method is the same as in Example 1.

[0098] Example 5

[0099] (1) The difference between this embodiment and Embodiment 1 is that the ion conductor used is different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0100] Electrode materials: 1mm diameter wire gold electrode and wire silver electrode;

[0101] Ionic conductor: 1-Octyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt ([OMIm][TFSI]);

[0102] Material of the middle channel: glass.

[0103] (2) The preparation method is the same as in Example 1.

[0104] Example 6

[0105] (1) The difference between this embodiment and Embodiment 1 is that the ion conductor used is different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0106] Electrode materials: 1mm diameter wire gold electrode and wire silver electrode;

[0107] Ionic conductor: 1-Ethyl-3-methylimidazolium acetate ([EMIm]Ac);

[0108] Material of the middle channel: glass.

[0109] (2) The preparation method is the same as in Example 1.

[0110] The non-temperature-dependent ion thermoelectric devices prepared in Examples 4-6 were tested, and the results are as follows: Figure 3 As shown in the figure, the thermoelectric sensing chips without temperature difference prepared in Examples 4-6 can all achieve temperature-controlled output of voltage signals. Replacing the ion conductor can effectively adjust the degree of voltage signal change with temperature. Specifically, the thermoelectric coefficient of the thermoelectric sensing chip in Example 4 is 0.8 mV / K, the thermoelectric coefficient of the thermoelectric sensing chip in Example 5 is 1.1 mV / K, and the thermoelectric coefficient of the thermoelectric sensing chip in Example 6 is 9.6 mV / K. Figure 3 As shown.

[0111] Example 7

[0112] (1) The difference between this embodiment and Embodiment 1 is that the electrode materials used are different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0113] Electrode materials: 1 mm diameter filament gold electrodes modified with 1-ethyl-3-methylimidazolium lipoic acid ([EMIm]TA) and filament gold electrodes modified with ethyl 1-lipoic acid-3-methylimidazolium bromide ([TA-EMIm]Br);

[0114] Ionic conductor: 1-Octyl-3-methylimidazolium acetate ([OMIm]Ac);

[0115] Material of the middle channel: glass.

[0116] (2) In this embodiment, the electrode is modified by immersing it in a 4 mmol / L modification solution for 8 hours.

[0117] (3) The preparation method is the same as in Example 1.

[0118] Example 8

[0119] (1) The only difference between this embodiment and embodiment 7 is the ionic conductor used; the other raw materials and steps are exactly the same.

[0120] Ionic conductor: 1-Octyl-3-methylimidazolium chloride ([OMIm]Cl).

[0121] Example 9

[0122] (1) The only difference between this embodiment and embodiment 7 is the ionic conductor used; the other raw materials and steps are exactly the same.

[0123] Ionic conductor: 1-Octyl-3-methylimidazolium bis(trifluorosulfonyl)imide ([OMIm][TFSI]).

[0124] Example 10

[0125] (1) The only difference between this embodiment and embodiment 7 is the ionic conductor used; the other raw materials and steps are exactly the same.

[0126] Ionic conductor: 1-Octyl-3-methylimidazolium hexafluorophosphate ([OMIm][PF6]).

[0127] The non-temperature-dependent ion thermoelectric devices prepared in Examples 7-10 were tested, and the results are as follows: Figure 4 As shown in the figure, the thermoelectric sensing chips without temperature difference prepared in Examples 7-10 can all achieve temperature-controlled output of voltage signals. By changing the ion conductor, the degree of change of the voltage signal with temperature can be effectively adjusted.

[0128] Example 11

[0129] Figure 5 This is a schematic diagram of another non-temperature-dependent ion thermoelectric device according to Example 11. The device includes a metal electrode (A) 1, a metal electrode (B) 4, an ion conductor 2, and an intermediate tank 3. The ion conductor is located between the metal electrode (A) 1 and the metal electrode (B) 4, and is in direct contact with both electrodes. The ion conductor 2 is loaded in the intermediate tank 3.

[0130] (1) The difference between this embodiment and Embodiment 1 is that the electrode preparation method, electrode shape and intermediate groove material are different. The raw materials used in the non-temperature-dependent ion thermoelectric device in this embodiment are composed of the following:

[0131] Electrode materials: thin-film gold electrodes and thin-film silver electrodes, specifically prepared by depositing template-based, designable-shape gold or silver onto polymethyl methacrylate using a magnetron sputtering coating machine (model: JCP-200, Beijing Taicono Technology Co., Ltd.). The dimensions of all thin films are 0.5cm × 1cm.

[0132] Ionic conductor: 1-Octyl-3-methylimidazolium acetate ([OMIm]Ac);

[0133] Intermediate tank material: polymethyl methacrylate.

[0134] (2) The specific preparation steps are as follows:

[0135] 1) Thin-film gold electrodes and thin-film silver electrodes are respectively bonded in parallel to both sides of the middle groove to form a sensing structure, with an electrode spacing of 0.5cm.

[0136] 2) 1-Octyl-3-methylimidazolium acetate was loaded into the intermediate tank by drop coating and then encapsulated.

[0137] Example 12

[0138] In this embodiment, 1 to 5 sensor chips from Embodiment 1 are connected in series (see structural diagram). Figure 6 (Illustration), thus enabling voltage multiplication ( Figure 6 ).

[0139] Example 13: Application of non-temperature-dependent ion thermoelectric devices based on asymmetric electrode interfaces in the fabrication of two-dimensional thermoelectric sensing arrays.

[0140] Figure 7 The image on the left shows a physical diagram of a two-dimensional thermoelectric sensor array with no temperature difference. The assembly relationship is as follows: Figure 7 As shown on the right, the two-dimensional thermoelectric sensing array without temperature difference consists of an upper substrate layer 1, a middle groove layer 2, and a lower substrate layer 3 from top to bottom. The upper substrate layer 1 and the lower substrate layer 3 have electrodes with different interface properties at corresponding positions.

[0141] (1) Fabrication of a two-dimensional thermoelectric sensor array without temperature difference

[0142] 1) Electrode deposition: Five rectangular gold electrode strips, each 1.0 cm × 0.5 cm in size, were deposited on a 4.2 cm × 4.2 cm glass slide (upper and lower substrates) using a magnetron sputtering deposition system (model: JCP-200, Beijing Taicono Technology Co., Ltd.). Subsequently, five silver electrode strips, each 1.0 cm × 0.5 cm in size, were deposited in close proximity to the gold electrodes using the same method.

[0143] 2) Device assembly: The device is assembled by bonding the various components in the manner of lower substrate - middle groove - upper substrate.

[0144] 3) Upper substrate processing: Drill small holes with a diameter of 1mm at the marked locations on the upper substrate, with a hole spacing of 1.4cm.

[0145] 4) Filling with ion conductors: 1-Octyl-3-methylimidazolium acetate ([OMIm]Ac) is transferred into the intermediate cell through the orifice using an injection method, while observing to ensure effective isolation between the cells. Finally, the orifice is sealed to complete the device encapsulation.

[0146] Example 14: Application of non-temperature-dependent ion thermoelectric devices based on asymmetric electrode interfaces in fire monitoring.

[0147] The entire process of the early fire warning simulation experiment is as follows: Figure 8 As shown.

[0148] The electrodes of the two-dimensional thermoelectric sensor chip without temperature difference prepared in Example 13 were connected to a microcontroller (model: Arduino, purchased from Beijing Xinzhongfa Electronics Market), and a suitable signal transceiver chip (model: nRF24L01, purchased from Beijing Xinzhongfa Electronics Market) was connected to the microcontroller to form a signal transmitter. The other end of the microcontroller, also connected to a signal transceiver chip, was connected to a computer to form a signal receiver. A red LED and a buzzer were connected in series to form an alarm module. The signal receiver was connected to the alarm module, and the alarm threshold was set to 80mV. The specific experimental process and results are as follows:

[0149] 1) Attach the signal transmitter to the trunk of a green tree and place it outdoors, place the signal receiver and the early warning module indoors, and monitor the reading of the signal receiver in real time.

[0150] 2) Ignite near the outdoor signal transmitter. After about 20 seconds, the voltage signal of the indoor signal receiver reaches the threshold and triggers the alarm.

[0151] 3) After extinguishing the fire with a fire extinguisher, the signal receiver reading was observed to drop back to the baseline.

[0152] Experimental results demonstrate the reliability of the two-dimensional thermoelectric sensor chip with no temperature difference.

[0153] The foregoing description of specific exemplary embodiments of the invention is for illustrative and explanatory purposes. These descriptions are not intended to limit the invention to the precise forms disclosed, and it will be apparent that many changes and variations can be made in accordance with the foregoing teachings. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application, thereby enabling those skilled in the art to implement and utilize various different exemplary embodiments of the invention, as well as various different choices and variations. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface, characterized in that, It includes electrodes with different interface properties, and an ion conductor connected between the electrodes; wherein the ion conductor is in direct contact with the electrodes; The ion thermoelectric device operates in a uniform temperature field where there is no temperature gradient between the electrodes, and its response temperature is -80~300℃. The ion thermoelectric device directly contacts the ion conductor through electrodes with different interface properties. By utilizing the difference in the interaction between the heterogeneous electrode interface and the ions, an asymmetric ion adsorption and desorption process that varies with temperature is generated on the surface of the two electrodes, creating an asymmetric electrode potential and outputting an open-circuit voltage that corresponds one-to-one with the temperature.

2. The non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface as described in claim 1, characterized in that... The electrodes with different interface properties refer to electrodes made of different materials, or electrodes made of the same material but treated with different interface modifications.

3. The non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface as described in claim 1, characterized in that, The ionic conductor includes at least one of ionic liquid, molten salt, electrolyte solution, and ionic gel.

4. The non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface as described in claim 3, characterized in that, The ionic liquid includes at least one of imidazole salts, pyridine salts, quaternary ammonium salts, quaternary phosphonium salts, pyrrolidines, piperidines, and functionalized ionic liquids; The molten salt includes ionic compounds in a molten state; The electrolyte solution comprises a solute-solution system in which the charge carriers are ions; The ion gel comprises a solid-like system in which the charge carriers are ions.

5. The method for fabricating a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface as described in any one of claims 1-4, characterized in that, Includes the following steps: S1 loads the ionic conductor onto the support substrate; S2 connects the electrode to the load substrate obtained in step S1 and assembles it into an ion thermoelectric device, wherein the electrode is in direct contact with the ion conductor on the load substrate.

6. The method for fabricating a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface as described in claim 5, characterized in that, In step S1, the loading method includes at least one of capillary tube, microfluidic chip, liquid tank, and gel material.

7. The method for fabricating a non-temperature-dependent ion thermoelectric device based on an asymmetric electrode interface as described in claim 6, characterized in that, In step S1, the material of the load matrix includes at least one of ceramics, glass, metal, polymethyl methacrylate, polyethylene, polyvinyl chloride, polypropylene, polycarbonate, and polyurea.

8. The application of the non-temperature-dependent ion thermoelectric device based on asymmetric electrode interface as described in any one of claims 1-4 in the fabrication of a two-dimensional thermoelectric sensing array.

9. The application of the non-temperature-dependent ion thermoelectric device based on asymmetric electrode interface as described in any one of claims 1-4 in fire monitoring.

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