Method for regulating resistive switching type of planar memristor

By introducing oxygen into the vacuum thermal evaporation coating process for oxygen doping, combined with coating, exposure, and etching processes, copper selenide thin films with adjustable thickness and doping degree are prepared. This solves the problem of controlling the multifunctional resistive switching type in the large-area and wafer-level fabrication of memristors, realizes the conversion between volatile and non-volatile characteristics, and exhibits low power consumption and high-temperature stability.

CN116828968BActive Publication Date: 2026-07-14FUDAN UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
FUDAN UNIVERSITY
Filing Date
2023-07-24
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing technologies make it difficult to achieve multi-functional resistance switching control of memristors in large-area and wafer-level fabrication, especially the switching between volatile and non-volatile modes.

Method used

By introducing oxygen into the vacuum thermal evaporation coating process for oxygen doping, and combining it with coating, exposure and development, and etching processes, copper selenide thin films with adjustable thickness and doping degree can be prepared to realize memristors with different channel lengths and control their resistive switching type.

Benefits of technology

It realizes the fabrication of memristors with large area and wafer-level fabrication, which can exhibit resistive switching between volatile and non-volatile modes under different channel lengths, and has low set/reset voltage and nanosecond-level switching speed, making it suitable for low power consumption and high temperature stable operation.

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Abstract

The application discloses a regulation and control method of a planar memristor of a resistance change type, and the memristor structure is planar, and sequentially comprises a source electrode, a thin film material and a drain electrode from left to right. A large-area doped thin film material is deposited on a substrate by adopting a vacuum coating process; the thin film material is designed to have different channel lengths and widths by adopting an ultraviolet lithography and etching process; then, the source electrode and the drain electrode are patterned by adopting an ultraviolet lithography process; finally, the source electrode and the drain electrode are evaporated by adopting a vacuum coating process, and then, the preparation of the device is completed through a stripping and heat annealing process. The thin film preparation method can realize the regulation and control of the thickness and the doping degree, and can realize the large-area and wafer-level preparation of the thin film. The planar memristor of the volatile or non-volatile type is selectively prepared by regulating and controlling the channel length of the thin film, and the regulation and control of the same channel material of different resistance change types are realized.
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