Change curve generation method, detection method, device, equipment and medium

Abstract

The embodiment of the application provides a change curve generation method, a detection method, a device, equipment and a medium, relates to the photoelectric detection technical field, and the change curve generation method comprises the following steps: obtaining a first change curve representing the corresponding relationship between the voltage value obtained by detecting a preset object under a preset environment temperature and the real temperature of the preset object; based on the sum of the first internal radiation intensity corresponding to each target structure unit in the infrared equipment to which the infrared detector belongs and the responsivity of the infrared detector under the target environment temperature, adjusting the first change curve to obtain a second change curve corresponding to the target environment temperature, so as to represent the corresponding relationship between the voltage value obtained by detecting the measured object under the target environment temperature and the temperature of the measured object; the first internal radiation intensity corresponding to one target structure unit is the radiation intensity of the target structure unit to the infrared detector under the target environment temperature. In this way, the accuracy of the detection result can be improved.

Description

Technical Field

[0001] This application relates to the field of photoelectric detection technology, and in particular to a method for generating change curves, a detection method, an apparatus, equipment, and a medium. Background Technology

[0002] Objects with temperatures above absolute zero (-273°C) emit infrared radiation, which can represent their temperature. Correspondingly, infrared devices can collect this emitted infrared radiation to measure the object's temperature. The infrared detector is a key component of infrared devices, used to convert incident infrared radiation into an electrical signal. For example, an infrared device can be an infrared thermal imager. The infrared detector in an infrared thermal imager receives the infrared radiation emitted by the object being measured and converts it into an electrical signal. This electrical signal can then be processed to obtain a voltage value, and the temperature of the object being measured can be determined based on this voltage value.

[0003] In related technologies, a preset object can be detected in advance at any ambient temperature to obtain the correspondence between the voltage value obtained by the infrared detector at that ambient temperature and the actual temperature of the preset object, which serves as the change curve of the infrared detector. Furthermore, at any ambient temperature, the voltage value obtained by the infrared detector on the object being measured is acquired, and the temperature corresponding to the voltage value calculated according to the change curve is taken as the temperature of the object being measured.

[0004] However, when the ambient temperature changes, the correlation between the voltage value obtained by the infrared detector and the temperature of the object being measured will also change due to temperature drift. Related technologies do not consider the influence of ambient temperature, which leads to a certain deviation between the final obtained temperature of the object and its true temperature, reducing the accuracy of the infrared detector's detection results. Summary of the Invention

[0005] The purpose of this application is to provide a method, detection method, apparatus, device, and medium for generating change curves, so as to reduce the deviation between the final obtained temperature of the measured object and the true temperature of the measured object, and improve the accuracy of the detection results of the infrared detector. The specific technical solution is as follows:

[0006] A first aspect of this application provides a method for generating a change curve, the method comprising:

[0007] Obtain a first variation curve; wherein, the first variation curve represents the correspondence between the voltage value obtained by the infrared detector detecting a preset object at a preset ambient temperature and the actual temperature of the preset object;

[0008] Based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first responsivity of the infrared detector at the target ambient temperature, the first variation curve is adjusted to obtain a second variation curve corresponding to the target ambient temperature; wherein, the second variation curve represents the correspondence between the voltage value obtained by the infrared detector from detecting the object under the target ambient temperature and the temperature of the object under the target ambient temperature; the first internal irradiance corresponding to a target structural unit represents the irradiance of the target structural unit on the infrared detector at the target ambient temperature.

[0009] Optionally, the target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

[0010] Optionally, the first internal irradiance corresponding to a target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and specified parameters;

[0011] The specified parameters include: the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature;

[0012] The structural parameters of the target structural unit include at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit.

[0013] Optionally, the first internal irradiance corresponding to a target structural unit is calculated based on the following formula:

[0014] E = μ1 × μ2 × T m

[0015] Wherein, E represents the first internal irradiance corresponding to the target structural unit; T represents the thermodynamic temperature of the target structural unit at the target ambient temperature; μ1 represents the first weight value corresponding to the target structural unit, which is obtained based on at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit; μ2 represents the second weight value corresponding to the target structural unit, which is obtained based on the temperature of the target structural unit at the target ambient temperature and / or the transmittance of the infrared detector at the target ambient temperature; and m represents a preset parameter.

[0016] Optionally, for each target structural unit, the first weight value corresponding to the target structural unit is positively correlated with the surface area of ​​the target structural unit, negatively correlated with the distance between the target structural unit and the infrared detector, positively correlated with the solid angle between the target structural unit and the infrared detector, and positively correlated with the emissivity of the target structural unit.

[0017] The second weight value corresponding to the target structural unit is positively correlated with the transmittance of the infrared detector at the target ambient temperature; at the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths less than a specified wavelength is less than a preset transmittance, then the second weight value corresponding to the target structural unit is negatively correlated with the temperature of the target structural unit at the target ambient temperature.

[0018] Optionally, the first change curve is represented by a first formula, which is:

[0019] y = k·R v (T1)·[E1(T2)+E2(T3)]·S·t+C

[0020] Wherein, for each pixel in the infrared detector, y represents the voltage value obtained by that pixel detecting the preset object at the preset ambient temperature; k represents the gain coefficient; T1 represents the temperature of the infrared detector at the preset ambient temperature; R v (T1) represents the second responsivity of the infrared detector at the preset ambient temperature; T2 represents the temperature of the preset object at the preset ambient temperature; E1(T2) represents the irradiance of the preset object on the pixel at the preset ambient temperature, where E1(T2) is a function of the object's temperature; T3 represents the temperature of each target structural unit at the preset ambient temperature; E2(T3) represents the sum of the second internal irradiances corresponding to each target structural unit; the second internal irradiance of a target structural unit represents the irradiance of that target structural unit on the infrared detector at the preset ambient temperature; S represents the area of ​​the pixel; t represents the circuit closing time of the infrared detector; C represents the offset coefficient.

[0021] The first variation curve is adjusted based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first responsivity of the infrared detector at the target ambient temperature, to obtain a second variation curve corresponding to the target ambient temperature, including:

[0022] Replace the second response rate in the first formula with the first response rate of the infrared detector at the target ambient temperature;

[0023] Replace the sum of the second internal irradiance corresponding to each target structural unit in the first formula with the sum of the first internal irradiance corresponding to each target structural unit to obtain a formula for representing the second change curve corresponding to the target ambient temperature.

[0024] A second aspect of this application provides a detection method, the method comprising:

[0025] The voltage value obtained by the infrared detector in the infrared device when detecting the target object at the target ambient temperature is used as the target voltage value;

[0026] The temperature corresponding to the target voltage value is calculated according to the second change curve corresponding to the target ambient temperature, and is taken as the temperature of the target object at the target ambient temperature; wherein, the second change curve is obtained based on any of the change curve generation methods described above.

[0027] A third aspect of this application provides an infrared device, the infrared device comprising: an infrared detector, a processor, and various target structural units; wherein the processor is configured to execute any of the aforementioned change curve generation methods or detection methods.

[0028] Optionally, the target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

[0029] Optionally, the infrared device further includes at least one of the following: a first temperature sensor for detecting the temperature of the lens, a second temperature sensor for detecting the temperature of the baffle, and a third temperature sensor for detecting the temperature of the infrared detector.

[0030] A fourth aspect of this application provides a change curve generation apparatus, the apparatus comprising:

[0031] The change curve acquisition module is used to acquire a first change curve; wherein, the first change curve represents the correspondence between the voltage value obtained by the infrared detector detecting a preset object at a preset ambient temperature and the actual temperature of the preset object;

[0032] The variation curve adjustment module is used to adjust the first variation curve based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first response rate of the infrared detector at the target ambient temperature, to obtain a second variation curve corresponding to the target ambient temperature; wherein, the second variation curve represents the correspondence between the voltage value obtained by the infrared detector from detecting the object under test at the target ambient temperature and the temperature of the object under test; the first internal irradiance corresponding to a target structural unit represents the irradiance of the target structural unit on the infrared detector at the target ambient temperature.

[0033] Optionally, the target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

[0034] Optionally, the first internal irradiance corresponding to a target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and specified parameters;

[0035] The specified parameters include: the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature;

[0036] The structural parameters of the target structural unit include at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit.

[0037] Optionally, the first internal irradiance corresponding to a target structural unit is calculated based on the following formula:

[0038] E = 1 × μ² × T m

[0039] Wherein, E represents the first internal irradiance corresponding to the target structural unit; T represents the thermodynamic temperature of the target structural unit at the target ambient temperature; μ1 represents the first weight value corresponding to the target structural unit, which is obtained based on at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit; μ2 represents the second weight value corresponding to the target structural unit, which is obtained based on the temperature of the target structural unit at the target ambient temperature and / or the transmittance of the infrared detector at the target ambient temperature; and m represents a preset parameter.

[0040] Optionally, for each target structural unit, the first weight value corresponding to the target structural unit is positively correlated with the surface area of ​​the target structural unit, negatively correlated with the distance between the target structural unit and the infrared detector, positively correlated with the solid angle between the target structural unit and the infrared detector, and positively correlated with the emissivity of the target structural unit.

[0041] The second weight value corresponding to the target structural unit is positively correlated with the transmittance of the infrared detector at the target ambient temperature; at the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths less than a specified wavelength is less than a preset transmittance, then the second weight value corresponding to the target structural unit is negatively correlated with the temperature of the target structural unit at the target ambient temperature.

[0042] Optionally, the first change curve is represented by a first formula, which is:

[0043] y = k·R v (T1)·[E1(T2)+E2(T3)]·S·t+C

[0044] Wherein, for each pixel in the infrared detector, y represents the voltage value obtained by that pixel detecting the preset object at the preset ambient temperature; k represents the gain coefficient; T1 represents the temperature of the infrared detector at the preset ambient temperature; R v (T1) represents the second responsivity of the infrared detector at the preset ambient temperature; T2 represents the temperature of the preset object at the preset ambient temperature; E1(T2) represents the irradiance of the preset object on the pixel at the preset ambient temperature, where E1(T2) is a function of the object's temperature; T3 represents the temperature of each target structural unit at the preset ambient temperature; E2(T3) represents the sum of the second internal irradiances corresponding to each target structural unit; the second internal irradiance of a target structural unit represents the irradiance of that target structural unit on the infrared detector at the preset ambient temperature; S represents the area of ​​the pixel; t represents the circuit closing time of the infrared detector; C represents the offset coefficient.

[0045] The change curve adjustment module is specifically used to replace the second response rate in the first formula with the first response rate of the infrared detector at the target ambient temperature.

[0046] Replace the sum of the second internal irradiance corresponding to each target structural unit in the first formula with the sum of the first internal irradiance corresponding to each target structural unit to obtain a formula for representing the second change curve corresponding to the target ambient temperature.

[0047] Another aspect of this application provides a detection device, the device comprising:

[0048] The voltage value acquisition module is used to acquire the voltage value obtained by the infrared detector in the infrared device when detecting the target object at the target ambient temperature, and use it as the target voltage value;

[0049] The temperature calculation module is used to calculate the temperature corresponding to the target voltage value according to the second change curve corresponding to the target ambient temperature, and use it as the temperature of the target object at the target ambient temperature; wherein, the second change curve is obtained based on any of the change curve generation methods described above.

[0050] Another aspect of this application provides an electronic device, comprising:

[0051] Memory, used to store computer programs;

[0052] When a processor executes a program stored in memory, it implements any of the above-described methods for generating or detecting change curves.

[0053] Another aspect of this application provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements any of the above-described methods for generating or detecting change curves.

[0054] This application also provides a computer program product containing instructions that, when run on a computer, cause the computer to execute any of the above-described change curve generation methods or detection methods.

[0055] This application provides a method for generating a change curve, which can obtain a first change curve. The first change curve represents the correspondence between the voltage value obtained by an infrared detector detecting a preset object at a preset ambient temperature and the actual temperature of the preset object. Based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first response rate of the infrared detector at the target ambient temperature, the first change curve is adjusted to obtain a second change curve corresponding to the target ambient temperature. The second change curve represents the correspondence between the voltage value obtained by the infrared detector detecting the measured object at the target ambient temperature and the temperature of the measured object. The first internal irradiance corresponding to a target structural unit represents the irradiance of that target structural unit to the infrared detector at the target ambient temperature.

[0056] The voltage value obtained by an infrared detector from a measured object is related to the irradiance received by the detector and its responsivity. The irradiance received by the detector includes the irradiance from the measured object (the target object) and the irradiance from other components of the infrared device (each target structural unit). When the ambient temperature changes, the irradiance from each target structural unit changes, leading to a change in the irradiance received by the detector and consequently, a change in the detector's temperature, which in turn affects its responsivity. Therefore, for a target object at the same temperature, if the target ambient temperature changes relative to a preset ambient temperature, the voltage value obtained by the infrared detector at the target ambient temperature will also change compared to the voltage value obtained at the preset ambient temperature. In other words, if the target ambient temperature changes relative to a preset ambient temperature, the relationship between the voltage value obtained by the infrared detector and the object's temperature will also change.

[0057] Based on the method provided in this application embodiment, at a target ambient temperature, for each target structural unit in the infrared device, the irradiance of that target structural unit to the infrared detector (i.e., the first internal irradiance corresponding to that target structural unit) can be obtained. Correspondingly, the sum of the first internal irradiances corresponding to each target structural unit in the infrared device can be obtained, and the first response rate of the infrared detector at the target ambient temperature can be obtained. In other words, the changes in factors affecting the voltage value obtained by the infrared detector when detecting a target object can be determined; that is, these changes can represent the change between the voltage value obtained when detecting the object at the target ambient temperature and the temperature of the object (i.e., the second change curve), relative to the change between the voltage value obtained when detecting a preset object at a preset ambient temperature and the actual temperature of the preset object (i.e., the first change curve).

[0058] Therefore, based on the determined change of the second variation curve relative to the first variation curve, the first variation curve can be adjusted to obtain the second variation curve. Since the first variation curve represents the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, the second variation curve can also represent the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, thus achieving temperature drift compensation. This, in turn, reduces the deviation between the final detected temperature of the measured object and the actual temperature of the measured object, improving the accuracy of the infrared detector's detection results.

[0059] Of course, implementing any product or method of this application does not necessarily require achieving all of the advantages described above at the same time. Attached Figure Description

[0060] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0061] Figure 1 A flowchart illustrating a method for generating a change curve provided in an embodiment of this application;

[0062] Figure 2 A flowchart illustrating a detection method provided in an embodiment of this application;

[0063] Figure 3 This is a schematic diagram of the structure of an infrared device provided in an embodiment of this application;

[0064] Figure 4 This is a schematic diagram of a change curve generation device provided in an embodiment of this application;

[0065] Figure 5 This is a schematic diagram of the structure of a detection device provided in an embodiment of this application;

[0066] Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0067] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art based on this application are within the scope of protection of this application.

[0068] To reduce the deviation between the final obtained temperature of the measured object and its true temperature, and to improve the accuracy of the infrared detector's results, see [reference needed]. Figure 1 , Figure 1 A flowchart of a method for generating a change curve provided in this application embodiment, the method may include the following steps:

[0069] Step S101: Obtain the first change curve.

[0070] The first variation curve represents the relationship between the voltage value obtained by the infrared detector when detecting a preset object at a preset ambient temperature and the actual temperature of the preset object.

[0071] Step S102: Based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first response rate of the infrared detector at the target ambient temperature, adjust the first change curve to obtain the second change curve corresponding to the target ambient temperature.

[0072] The second variation curve represents the relationship between the voltage value obtained by the infrared detector at the target ambient temperature and the temperature of the object being measured; the first internal irradiance of a target structural unit represents the irradiance of the target structural unit to the infrared detector at the target ambient temperature.

[0073] Based on the method provided in this application embodiment, at a target ambient temperature, for each target structural unit in the infrared device, the irradiance of that target structural unit to the infrared detector (i.e., the first internal irradiance corresponding to that target structural unit) can be obtained. Correspondingly, the sum of the first internal irradiances corresponding to each target structural unit in the infrared device can be obtained, and the first response rate of the infrared detector at the target ambient temperature can be obtained. In other words, the changes in factors affecting the voltage value obtained by the infrared detector when detecting the object under test can be determined; that is, these changes can represent the change between the voltage value obtained when detecting the object under test at the target ambient temperature and the temperature of the object under test (i.e., the second change curve), relative to the change between the voltage value obtained when detecting a preset object at a preset ambient temperature and the actual temperature of the preset object (i.e., the first change curve).

[0074] Therefore, based on the determined change of the second variation curve relative to the first variation curve, the first variation curve can be adjusted to obtain the second variation curve. Since the first variation curve represents the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, the second variation curve can also represent the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, thus achieving temperature drift compensation. This, in turn, reduces the deviation between the final detected temperature of the measured object and the actual temperature of the measured object, improving the accuracy of the infrared detector's detection results.

[0075] For step S101, the preset ambient temperature can be any pre-selected ambient temperature, without specific limitations. For example, the preset ambient temperature can be 20℃ or 25℃. The preset object can be an object capable of regulating its own temperature; for example, the preset object can be a blackbody capable of regulating its own temperature. The preset object can be detected by an infrared device at the preset ambient temperature. By adjusting the temperature of the preset object, the voltage values ​​obtained by the infrared detector in the infrared device for the preset object at various temperatures are obtained. For example, the infrared detector is made of a material capable of absorbing infrared radiation. When the object being measured is detected, the infrared detector can absorb the infrared radiation emitted by the object and convert the absorbed infrared radiation into heat energy. Correspondingly, this will cause the temperature of the sensitive element in the infrared device to rise, causing a change in the resistance of the sensitive element. Then, the readout circuit designed in the infrared device converts the change in resistance value into a voltage value. Based on the obtained voltage value and the change curve of the infrared detector, the temperature of the object being measured is determined.

[0076] An infrared detector can contain multiple pixels of the same size, which convert received infrared radiation into electrical signals. Each pixel can be considered a single pixel point, and the voltage value output by that pixel can be processed to obtain its corresponding pixel value. Consequently, the pixel values ​​of each pixel can be obtained, resulting in an image representing the temperature distribution of the measured object. For each pixel in the infrared detector, the temperature of a preset object and the voltage value obtained by that pixel when detecting the preset object can be recorded. This allows for the determination of the correspondence between the voltage value obtained by each pixel when detecting the preset object at a preset ambient temperature and the actual temperature of the preset object. Consequently, a first variation curve representing the correspondence between the voltage value obtained when detecting the preset object at a preset ambient temperature and the actual temperature of the preset object can be obtained. For example, a preset object can be detected at a preset ambient temperature, and multiple voltage values ​​and the corresponding actual temperatures of the preset object can be acquired. Then, a first variation curve can be fitted based on the acquired multiple sets of voltage values ​​and actual temperatures. The first variation curve can be a non-linear curve.

[0077] For step S102, the target ambient temperature can be any ambient temperature from which the change curve needs to be determined. Each target structural unit can be determined based on the internal structure of the infrared device, excluding the infrared detector. The infrared detector and each target structural unit constitute the internal structure of the infrared device's core. A target structural unit can be any component within the infrared device that generates infrared radiation, excluding the infrared detector; that is, a target structural unit can be a component within the infrared device. Alternatively, a target structural unit can also be obtained by dividing a component; that is, multiple target structural units can be obtained by dividing a component.

[0078] Since the irradiance of an object is related to its temperature, after determining each target structural unit, the temperature of each target structural unit at the target ambient temperature can be obtained. Based on this temperature, the irradiance of the target structural unit on the infrared detector (i.e., the first internal irradiance corresponding to that target structural unit) can be calculated. Furthermore, the sum of the first internal irradiances corresponding to each target structural unit in the infrared device (which can be called the first irradiance sum) can be determined; that is, the irradiance of the infrared detector on the infrared detector from other structures in the infrared device, excluding the infrared detector itself, can be obtained.

[0079] The responsivity of an infrared detector can be expressed as the change in voltage detected when the temperature of the object being measured increases by 1 K (Kelvin, a unit of thermodynamic temperature). The unit of responsivity is mV (millivolts) / K.

[0080] The voltage value obtained by an infrared detector from the measured object is related to the irradiance received by the infrared detector and the detector's responsivity. Furthermore, when the ambient temperature changes, the irradiance received by each target structural unit from the infrared detector changes, leading to changes in the irradiance received by the infrared detector. Simultaneously, the temperature of the infrared detector also changes, causing a change in its responsivity.

[0081] Therefore, when the ambient temperature changes, the relationship between the voltage value obtained from detecting the object and the temperature of the object can be determined based on the changes in the irradiance of each target structural unit to the infrared detector and the response rate of the infrared detector. The object being detected is the object that needs to be detected by the infrared detector.

[0082] For example, the relationship between the temperature and responsivity of the infrared detector can be obtained in advance through actual testing. Accordingly, the responsivity of the infrared detector at the target ambient temperature (i.e., the first responsivity) can be determined. Furthermore, based on the first total irradiance, the variation in irradiance of each target structural unit to the infrared detector can be determined, and based on the first responsivity, the variation in the responsivity of the infrared detector can be determined. That is, based on the first total irradiance and the first responsivity, the variation curve corresponding to the target ambient temperature (i.e., the second variation curve) relative to the variation curve corresponding to the preset ambient temperature (i.e., the first variation curve) can be determined. Therefore, based on the first total irradiance and the first responsivity, the first variation curve can be adjusted to obtain the second variation curve corresponding to the target ambient temperature. The second variation curve can also be a non-linear curve.

[0083] In one embodiment, the target structural unit is determined based on at least one of a lens, cavity, and baffle in the infrared device.

[0084] In the embodiments of this application, the components in the infrared device capable of generating infrared radiation include a lens, a cavity, and a baffle. A target structural unit can be one component in the infrared device; that is, a target structural unit can be a lens, a cavity, or a baffle. Alternatively, a component can be divided to obtain multiple target structural units; that is, a target structural unit can be obtained by dividing at least one of the lens, cavity, and baffle. For example, a lens can be divided into two equal parts as two target structural units; a cavity can be divided into three parts as three target structural units. Those skilled in the art can determine the target structural units according to actual needs; the method of determining the target structural units and the number of determined target structural units are not specifically limited.

[0085] Based on the above processing, the target structural unit can be determined according to other structures in the infrared device besides the infrared detector (i.e., at least one of the lens, cavity, and baffle). For each target structural unit, the irradiance of that target structural unit to the infrared detector can be determined, and thus, the first total irradiance can be determined. That is, the irradiance of each target structural unit to the infrared detector can be determined, further ensuring that the variation of the irradiance of the target structural unit to the infrared detector can be determined, so as to obtain the second variation curve. Therefore, temperature drift compensation can be achieved through the second variation curve, reducing the deviation between the finally detected temperature of the measured object and the actual temperature of the measured object, and improving the accuracy of the detection results of the infrared detector.

[0086] Because the temperature distribution of infrared devices is often uneven—that is, the temperature of different components within an infrared device can vary—for example, the temperature of the part of the lens closest to the external environment differs from the temperature of the part closest to the interior of the infrared device, when the components of an infrared device are divided into target structural units, the temperatures of different target structural units derived from the same component can also differ. In other words, the more finely a component is divided, the more accurately the temperature of the different target structural units can be determined based on the component's own temperature distribution, thus improving the accuracy of determining the temperature of different target structural units. Correspondingly, this improves the accuracy of the first internal irradiance corresponding to each target structural unit, and consequently, the accuracy of the total first irradiance. Furthermore, since the second variation curve is obtained by adjusting the first variation curve based on the total first irradiance, the accuracy of the obtained second variation curve is also improved. This improves the accuracy of temperature drift compensation when detecting the object under target ambient temperature, further reducing the deviation between the temperature of the object determined from the detected voltage value and the actual temperature of the object, thereby improving the accuracy of the infrared detector's detection results.

[0087] In one implementation, temperature sensors can be installed on some components of the infrared device, and then the temperature of each target structural unit can be obtained by calculation or thermal design simulation based on the detected temperature of some components.

[0088] In one embodiment, the first internal irradiance corresponding to a target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and specified parameters.

[0089] The specified parameters include: the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature.

[0090] The structural parameters of the target structural unit include at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit.

[0091] In the embodiments of this application, since each voltage value is obtained from a pixel of the infrared detector, the corresponding first internal irradiance of a target structural unit is also obtained for each pixel. Therefore, the parameters related to the infrared detector in the specified parameters are all for each pixel.

[0092] For example, when a pixel receives infrared light, it reflects some of the infrared light. Therefore, the infrared light actually received by the pixel is only a portion of the infrared light emitted to the pixel. For each pixel in an infrared detector, the transmittance of the infrared detector to each infrared band at the target ambient temperature can be expressed as the ratio between the irradiance received by the pixel in that infrared band at the target ambient temperature and the irradiance emitted to the pixel.

[0093] For example, when calculating the distance between the target structural unit and the infrared detector, for each pixel, the distance between that pixel and the center point of the target structural unit can be calculated, and correspondingly, the distance between the target structural unit and each pixel in the infrared detector can be obtained. When calculating the solid angle between the target structural unit and the infrared detector, for each pixel, the solid angle between the target structural unit and that pixel can be calculated. The solid angle can be the cone angle of a cone with that pixel as its vertex, and that cone is the smallest circumscribed cone of the target structural unit. For example, the infrared device can be modeled in advance to obtain a three-dimensional model of the infrared device. For each pixel, the distance between each target structural unit and that pixel, as well as the solid angle between each target structural unit and that pixel, can be determined based on the three-dimensional model of the infrared device. The emissivity of a target structural unit can be the emissivity of the material that makes up the target structural unit. Emissivity can represent the ratio of the radiant flux radiated per unit area of ​​an object's surface to the radiant flux radiated by a blackbody at the same temperature.

[0094] For each target structural unit, the first internal irradiance is related to the irradiance emitted by the target structural unit and the transmittance of the infrared detector. Therefore, the first irradiance of the target structural unit can be calculated based on the irradiance emitted by the target structural unit and the transmittance of the infrared detector. The greater the irradiance emitted by the target structural unit, the greater the first internal irradiance of the target structural unit. Since the higher the temperature of the target structural unit, the higher the proportion of shorter wavelength infrared light in the infrared light emitted by the target structural unit, the lower the transmittance of the infrared detector for shorter wavelength infrared light, the smaller the first internal irradiance of the target structural unit.

[0095] The larger the surface area of ​​the target structural unit, the greater the irradiance emitted by the target structural unit, and correspondingly, the greater the first internal irradiance of the target structural unit. The closer the target structural unit is to the infrared detector, the less the irradiance loss emitted by the target structural unit, and correspondingly, the greater the irradiance received by the infrared detector, that is, the greater the first internal irradiance of the target structural unit. The larger the solid angle between the target structural unit and the infrared detector, the closer the target structural unit is to the infrared detector, and correspondingly, the greater the first internal irradiance of the target structural unit. The higher the emissivity of the constituent materials of the target structural unit, the greater the irradiance emitted by the target structural unit, and correspondingly, the greater the first internal irradiance of the target structural unit.

[0096] Therefore, for a target structural unit, the first internal irradiance can be determined based on the temperature of the target structural unit at the target ambient temperature, the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature. Furthermore, the more parameters used in determining the first internal irradiance of the target structural unit, the more accurate the obtained first internal irradiance will be.

[0097] Based on the above processing, the first internal irradiance corresponding to each target structural unit can be calculated, improving the accuracy of the first internal irradiance corresponding to that target structural unit, and thus improving the accuracy of the total first irradiance. Furthermore, since the second variation curve is obtained by adjusting the first variation curve based on the total first irradiance, the accuracy of the obtained second variation curve can also be improved. Correspondingly, by implementing temperature drift compensation through the second curve, the deviation between the final obtained temperature of the measured object and the true temperature of the measured object can be further reduced, improving the accuracy of the infrared detector's detection results.

[0098] In one embodiment, the first internal irradiance corresponding to a target structural unit is calculated based on formula (1):

[0099] E = μ1 × μ2 × T m (1)

[0100] Where E represents the first internal irradiance corresponding to the target structural unit; T represents the thermodynamic temperature of the target structural unit at the target ambient temperature; μ1 represents the first weight value corresponding to the target structural unit, which is obtained based on at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit; μ2 represents the second weight value corresponding to the target structural unit, which is obtained based on the temperature of the target structural unit at the target ambient temperature, and / or the transmittance of the infrared detector at the target ambient temperature; m represents a preset parameter, T m This represents T raised to the power of m. For example, m can be 4 or 5.

[0101] In this embodiment, for each target structural unit, the temperature of the target structural unit at the target ambient temperature (which can be referred to as the target structural temperature) can be expressed as a thermodynamic temperature. The second weight value corresponding to the target structural unit is a function with the target structural temperature as the independent variable. The weight value (i.e., the first weight value and the second weight value) corresponding to the target structural unit can be determined according to the specified parameters and the target structural temperature. Then, based on the determined weight value and the target structural temperature, the first internal irradiance corresponding to the target structural unit is determined.

[0102] Based on this, the accuracy of the first internal irradiance corresponding to each identified target structural unit can be improved, thus improving the accuracy of the total first irradiance. Furthermore, since the second variation curve is obtained by adjusting the first variation curve based on the total first irradiance, the accuracy of the obtained second variation curve can also be improved. Correspondingly, by implementing temperature drift compensation through the second curve, the deviation between the final obtained temperature of the measured object and its true temperature can be further reduced, improving the accuracy of the infrared detector's detection results.

[0103] In one embodiment, for each target structural unit, the first weight value corresponding to the target structural unit is positively correlated with the surface area of ​​the target structural unit, negatively correlated with the distance between the target structural unit and the infrared detector, positively correlated with the solid angle between the target structural unit and the infrared detector, and positively correlated with the emissivity of the target structural unit.

[0104] The second weight value corresponding to the target structural unit is positively correlated with the transmittance of the infrared detector at the target ambient temperature; at the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths smaller than the specified wavelength is less than the preset transmittance, then the second weight value corresponding to the target structural unit is negatively correlated with the temperature of the target structural unit at the target ambient temperature.

[0105] In this embodiment, for each target structural unit, a weight value corresponding to that target structural unit can be determined based on specified parameters and the target structural temperature. Then, based on the determined weight value and the target structural temperature, the first internal irradiance corresponding to that target structural unit is determined. This improves the accuracy of the determined first internal irradiance for each target structural unit, thus improving the accuracy of the total first irradiance. Furthermore, since the second variation curve is obtained by adjusting the first variation curve based on the total first irradiance, the accuracy of the obtained second variation curve is also improved. Correspondingly, by implementing temperature drift compensation through the second curve, the deviation between the final obtained temperature of the measured object and the actual temperature of the measured object can be further reduced, improving the accuracy of the infrared detector's detection results.

[0106] For each target structural unit, the larger the surface area of ​​the target structural unit, the greater the irradiance emitted by the target structural unit, and correspondingly, the greater the first internal irradiance of the target structural unit. Therefore, the first weight value corresponding to the target structural unit can be set to be positively correlated with the surface area of ​​the target structural unit.

[0107] The closer the target structural unit is to the infrared detector, the less irradiance is lost from the target structural unit. Consequently, the irradiance received by the infrared detector is greater, meaning the first internal irradiance corresponding to the target structural unit is also greater. Therefore, the first weight value corresponding to the target structural unit can be set to be negatively correlated with the distance between the target structural unit and the infrared detector.

[0108] The larger the solid angle between the target structural unit and the infrared detector, the closer the target structural unit is to the infrared detector, and correspondingly, the greater the first internal irradiance of the target structural unit. Therefore, the first weight value corresponding to the target structural unit can be set to be positively correlated with the solid angle between the target structural unit and the infrared detector.

[0109] The higher the emissivity of the constituent materials of the target structural unit, the greater the irradiance emitted by the target structural unit, and correspondingly, the greater the first internal irradiance of the target structural unit. Therefore, the first weight value corresponding to the target structural unit can be set to be positively correlated with the emissivity of the target structural unit.

[0110] For example, for each target structural unit, the first weight value of the target structural unit can be expressed as formula (2), as shown below:

[0111]

[0112] Wherein, μ1 represents the first weight value corresponding to the target structural unit; α, β, γ, and ρ represent preset constant coefficients, and τ represents a preset constant exponent, which can be set as needed by those skilled in the art; S0 represents the surface area of ​​the target structural unit; S1 represents the solid angle between the target structural unit and the infrared detector; S2 represents the emissivity of the target structural unit; and L represents the distance between the target structural unit and the infrared detector.

[0113] The higher the transmittance of the infrared detector at the target ambient temperature, the more infrared light emitted by the target structural unit can be received by the infrared detector, and correspondingly, the greater the irradiance received by the infrared detector, that is, the greater the first internal irradiance of the target structural unit. Therefore, the second weight value corresponding to the target structural unit can be set to be positively correlated with the transmittance of the infrared detector at the target ambient temperature. Furthermore, since the higher the temperature of the target structural unit, the higher the proportion of shorter wavelength infrared light in the emitted infrared light, if the transmittance of the infrared detector for shorter wavelength infrared light is lower, the first internal irradiance of the target structural unit will be lower. Therefore, at the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths smaller than a specified wavelength is less than a preset transmittance, the second weight value corresponding to the target structural unit can be set to be negatively correlated with the temperature of the target structural unit at the target ambient temperature. For example, the specified wavelength can be 8 micrometers or 9 micrometers, and the preset transmittance can be 0.6 or 0.7.

[0114] For example, at the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths shorter than a specified wavelength is less than a preset transmittance, then the second weight value of the target structural unit can be expressed as formula (3), as shown below:

[0115]

[0116] Where μ3 represents the second weight value corresponding to the target structural unit; θ, S represents a pre-set constant coefficient, σ is a pre-set constant exponent, which can be set as needed by those skilled in the art; S3 represents the transmittance of the infrared detector at the target ambient temperature; T represents the temperature of the target structural unit at the target ambient temperature.

[0117] In one embodiment, the first change curve is represented by a first formula, which is formula (4), as shown below:

[0118] y = k·R v (T10·[E1(T2)+E2(T3)]·S·t+C (4)

[0119] Wherein, for each pixel in the infrared detector, y represents the voltage value obtained by that pixel when detecting a preset object at a preset ambient temperature; k represents the gain coefficient; and T1 represents the temperature of the infrared detector at the preset ambient temperature. v (T1 represents the second responsivity of the infrared detector at the preset ambient temperature; T2 represents the temperature of the preset object at the preset ambient temperature; E1(T2) represents the irradiance of the preset object on the pixel at the preset ambient temperature, and E1(T2) is a function with the object's temperature as the independent variable; T3 represents the temperature of each target structural unit at the preset ambient temperature; E2(T3) represents the sum of the second internal irradiance corresponding to each target structural unit; the second internal irradiance corresponding to a target structural unit represents: the irradiance of the target structural unit on the infrared detector at the preset ambient temperature; S represents the area of ​​the pixel; t represents the circuit closing time of the infrared detector; C represents the offset coefficient.)

[0120] Step S102 includes:

[0121] Step 1: Replace the second response rate in the first formula with the first response rate of the infrared detector at the target ambient temperature.

[0122] Step 2: Replace the sum of the second internal irradiance corresponding to each target structural unit in the first formula with the sum of the first internal irradiance corresponding to each target structural unit to obtain the formula used to represent the second change curve corresponding to the target ambient temperature.

[0123] In this embodiment, the gain coefficient, offset coefficient, and t are preset fixed values. E1(T2) is a function with the temperature of the object as the independent variable, and this function can be a nonlinear function. The circuit closing time of the infrared detector can represent the time it takes for the infrared detector to receive the infrared radiation emitted by the object being measured.

[0124] For each pixel in the infrared detector, the voltage value obtained by that pixel detecting a preset object at a preset ambient temperature can be represented by formula (4). Formula (4) can also be called the response model of the infrared detector. The correspondence between the temperature of the infrared detector and the response rate of the infrared detector can be obtained in advance through actual testing, and correspondingly, the second response rate of the infrared detector at the preset ambient temperature can be determined.

[0125] For each pixel in the infrared detector, the voltage value obtained by that pixel when detecting a preset object at a preset ambient temperature is related to the radiant energy received by that pixel and the second responsivity. The radiant energy received by that pixel can be calculated using formula (5):

[0126] Q(T2, T3)=E(T2, T3)·S·t (5)

[0127] Where Q(T2, T3) represents the radiation energy received by the pixel; E(T2, T3) represents the irradiance received by the pixel, i.e. [E1(T2)+E2(T3)] in formula (4); T2 represents the temperature of the preset object at the preset ambient temperature; T3 represents the temperature of each target structural unit in the infrared device at the preset ambient temperature; S represents the area of ​​the pixel; and t represents the circuit closing time of the infrared detector.

[0128] In one implementation, the sum of the second internal irradiance corresponding to each target structural unit (which can be called the second irradiance sum) can be calculated by formula (6):

[0129]

[0130] Where E2(T3) represents the total second irradiance; n represents the number of target structural units in the infrared device; j represents the j-th target structural unit; μ 1，j μ represents the first weight value of the j-th target structural unit; 2，j T represents the second weight value of the j-th target structural unit; 3，j The temperature of the j-th target structural unit is represented by ; m represents the preset parameter.

[0131] The irradiance received by the infrared detector includes the irradiance emitted by the object being measured and the sum of the irradiance emitted by each target structural unit in the infrared device. For each pixel, when the ambient temperature changes, the temperature of the infrared detector also changes, causing changes in the sum of the irradiance emitted by each target structural unit and the responsivity of the infrared detector. Consequently, the voltage value obtained by that pixel when detecting the object being measured will also change.

[0132] Therefore, when the ambient temperature changes to the target ambient temperature, the first responsivity of the infrared detector at the target ambient temperature can be determined, as well as the first total irradiance. Replacing the first responsivity with the second responsivity in the first formula allows adjustment of the slope of the first formula. Replacing the second total irradiance in the first formula with the first total irradiance allows adjustment of the intercept of the first formula. The formula obtained after adjusting the first formula can then represent the second change curve corresponding to the target ambient temperature.

[0133] Based on the above processing, the first formula representing the first change curve can be adjusted according to the determined change of the second change curve relative to the first change curve to obtain the formula representing the second change curve. Based on this, for any given ambient temperature, a formula representing the change curve corresponding to that ambient temperature can be obtained; that is, the correspondence between the voltage value obtained by the infrared detector at any ambient temperature and the temperature of the measured object can be obtained. Therefore, when the ambient temperature changes, the temperature corresponding to the voltage value obtained by the infrared detector at the current ambient temperature can be calculated according to the formula representing the change curve corresponding to the current ambient temperature, and this temperature can be taken as the temperature of the measured object. Furthermore, since the formula representing the change curve can represent the correspondence between the voltage value obtained by the detector and the true temperature of the measured object, temperature drift compensation can be achieved. This, in turn, reduces the deviation between the final obtained temperature of the target object and the true temperature of the target object, improving the accuracy of the infrared detector's detection results.

[0134] This application also provides a detection method, see [link to relevant documentation] Figure 2 , Figure 2 A flowchart of a detection method provided in this application embodiment, the method may include the following steps:

[0135] Step S201: Obtain the voltage value obtained by the infrared detector in the infrared device when detecting the target object at the target ambient temperature, and use it as the target voltage value.

[0136] Step S202: Calculate the temperature corresponding to the target voltage value according to the second change curve corresponding to the target ambient temperature, and use it as the temperature of the target object under the target ambient temperature.

[0137] The second change curve is obtained based on any of the change curve generation methods described in the above embodiments.

[0138] In this embodiment, the target object is the object that needs to be detected. At the target ambient temperature, for each pixel in the infrared detector, the voltage value (i.e., the target voltage value) obtained by that pixel in detecting the target object can be acquired, and a second change curve corresponding to the target ambient temperature can be generated according to any of the change curve generation methods described in the above embodiments. Furthermore, the temperature corresponding to the target voltage value can be determined based on the second change curve, which serves as the temperature of the target object detected by that pixel at the target ambient temperature.

[0139] Based on the above processing, since the second variation curve can represent the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, determining the temperature corresponding to the target voltage value based on the second variation curve, and using this temperature as the target object's temperature at the target ambient temperature, can achieve temperature drift compensation. Furthermore, this reduces the deviation between the final detected temperature of the target object and its actual temperature, improving the accuracy of the infrared detector's detection results.

[0140] This application also provides an infrared device, including an infrared detector, a processor, and various target structural units.

[0141] The processor is used to execute any of the change curve generation methods or detection methods described in the above embodiments.

[0142] Based on the infrared device provided in this application embodiment, at a target ambient temperature, for each target structural unit in the infrared device, the irradiance of that target structural unit to the infrared detector (i.e., the first internal irradiance corresponding to that target structural unit) can be obtained. Correspondingly, the sum of the first internal irradiances corresponding to each target structural unit in the infrared device can be obtained, and the first response rate of the infrared detector at the target ambient temperature can be obtained. In other words, the changes in factors affecting the voltage value obtained by the infrared detector when detecting a target object can be determined; that is, these changes can represent the change between the voltage value obtained when detecting the object at the target ambient temperature and the temperature of the object (i.e., the second change curve), relative to the change between the voltage value obtained when detecting a preset object at a preset ambient temperature and the actual temperature of the preset object (i.e., the first change curve).

[0143] Therefore, based on the determined change of the second variation curve relative to the first variation curve, the first variation curve can be adjusted to obtain the second variation curve. Since the first variation curve represents the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, the second variation curve can also represent the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, thus achieving temperature drift compensation. This, in turn, reduces the deviation between the final detected temperature of the target object and the actual temperature of the target object, improving the accuracy of the infrared detector's detection results.

[0144] In one embodiment, the target structural unit is determined based on at least one of a lens, cavity, and baffle in the infrared device.

[0145] Based on the above processing, the target structural unit can be determined according to other structures in the infrared device besides the infrared detector (i.e., at least one of the lens, cavity, and baffle). For each target structural unit, the irradiance of that target structural unit to the infrared detector can be determined, and thus, the first total irradiance can be determined. That is, the irradiance of each target structural unit to the infrared detector can be determined, further ensuring that the variation of the irradiance of the target structural unit to the infrared detector can be determined, so as to obtain the second variation curve. Therefore, temperature drift compensation can be achieved through the second variation curve, reducing the deviation between the finally detected temperature of the measured object and the actual temperature of the measured object, and improving the accuracy of the detection results of the infrared detector.

[0146] Because the temperature distribution of infrared devices is often uneven—that is, the temperature of different components within an infrared device can vary—for example, the temperature of the part of the lens closest to the external environment differs from the temperature of the part closest to the interior of the infrared device, the more finely the components are divided into target structural units, the more accurate the temperature determination for each target structural unit can be based on the temperature distribution of the infrared device itself. Correspondingly, this improves the accuracy of the first internal irradiance corresponding to that target structural unit, and consequently, the accuracy of the total first irradiance. Furthermore, since the second variation curve is obtained by adjusting the first variation curve based on the total first irradiance, the accuracy of the obtained second variation curve is also improved. This improves the accuracy of temperature drift compensation when detecting the object under target ambient temperature, further reducing the deviation between the temperature of the object determined from the detected voltage value and the actual temperature of the object, thus improving the accuracy of the infrared detector's detection results.

[0147] In one embodiment, the infrared device further includes at least one of the following: a first temperature sensor for detecting the temperature of the lens, a second temperature sensor for detecting the temperature of the baffle, and a third temperature sensor for detecting the temperature of the infrared detector.

[0148] In this embodiment, temperature sensors can be used to detect the temperatures of the lens, the baffle, and the infrared detector in the infrared device. Furthermore, the temperature of each target structural unit in the infrared device can be estimated based on the detected temperatures of the lens, the baffle, and the infrared detector. It is understood that, based on this method, temperature sensors can be installed on some components of the infrared device, and the temperature of each target structural unit can be estimated based on the detected temperatures of these components. This eliminates the need for a temperature sensor for each target structural unit, reducing the number of temperature sensors used and thus lowering the manufacturing cost of the infrared device.

[0149] Based on the above processing, the temperature of each target structural unit in the infrared device and the temperature of the infrared detector can be determined using the temperature sensor. Furthermore, the first responsivity and the first total irradiance can be obtained from the determined temperatures. Correspondingly, the first variation curve can be adjusted based on the first responsivity and the first total irradiance to obtain a second variation curve corresponding to the target ambient temperature. That is, by further ensuring the determination of the second variation curve corresponding to the target ambient temperature, temperature drift compensation can be achieved. This reduces the deviation between the finally detected temperature of the target object and the actual temperature of the target object, improving the accuracy of the infrared detector's detection results.

[0150] In one implementation, a temperature sensor can be installed for each target structural unit in the infrared device to detect the temperature of that target structural unit. Based on this, the temperature of each target structural unit can be determined according to the detection results of the temperature sensors, improving the accuracy of the determined temperature of each target structural unit.

[0151] In one embodiment, see Figure 3 , Figure 3 This is a schematic diagram of the structure of an infrared device provided in an embodiment of this application. The infrared device includes a first temperature sensor 301, a lens 302, a second temperature sensor 303, a cavity 304, a baffle 305, an infrared detector 306, and a third temperature sensor 307.

[0152] In this embodiment, the first temperature sensor 301 is used to detect the temperature of the lens 302, the second temperature sensor 303 is used to detect the temperature of the baffle 305, and the third temperature sensor 307 is used to detect the temperature of the infrared detector 306. Figure 3 The structure described can also be referred to as the internal structure of the infrared device's core.

[0153] Based on this infrared device, a second variation curve corresponding to the target's ambient temperature can be determined. This second variation curve represents the correspondence between the voltage value obtained from detecting the target object and the actual temperature of the target object, thus enabling temperature drift compensation. Therefore, this infrared device can also be called a temperature drift correction device. Consequently, when detecting a target object, the deviation between the final obtained temperature of the target object and its actual temperature can be reduced, improving the accuracy of the detection results.

[0154] The infrared device provided in this application embodiment can be equipped with multiple temperature sensors (i.e., multi-point monitoring) or a single temperature sensor (i.e., single-point monitoring) to obtain the temperature of the infrared device. Furthermore, the internal temperature distribution of the infrared device can be obtained through calculation or thermal design simulation. Based on the response model of the infrared detector and the current ambient temperature, the corresponding change curve of the current ambient temperature can be determined. This determined change curve can represent the correspondence between the voltage value obtained from detecting the object and the true temperature of the object, thus achieving temperature drift compensation. Consequently, the deviation between the finally detected temperature of the target object and the true temperature of the target object can be reduced, improving the accuracy of the detection results.

[0155] This application also provides a device for generating a change curve, see [link to relevant documentation]. Figure 4 , Figure 4 This is a schematic diagram of a change curve generation device provided in an embodiment of this application. The device includes:

[0156] The change curve acquisition module 401 is used to acquire the first change curve.

[0157] The first variation curve represents the correspondence between the voltage value obtained by the infrared detector when detecting a preset object at a preset ambient temperature and the actual temperature of the preset object.

[0158] The variation curve adjustment module 402 is used to adjust the first variation curve based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first response rate of the infrared detector at the target ambient temperature, to obtain a second variation curve corresponding to the target ambient temperature.

[0159] Wherein, the second change curve represents the correspondence between the voltage value obtained by the infrared detector from detecting the object under the target ambient temperature and the temperature of the object under the target ambient temperature; the first internal irradiance corresponding to a target structural unit represents the irradiance of the target structural unit to the infrared detector under the target ambient temperature.

[0160] Based on the apparatus provided in this application embodiment, at a target ambient temperature, for each target structural unit in the infrared device, the irradiance of that target structural unit to the infrared detector (i.e., the first internal irradiance corresponding to that target structural unit) can be obtained. Correspondingly, the sum of the first internal irradiances corresponding to each target structural unit in the infrared device can be obtained, and the first responsivity of the infrared detector at the target ambient temperature can be obtained. In other words, the changes in factors affecting the voltage value obtained by the infrared detector when detecting a target object can be determined; that is, these changes can represent the change between the voltage value obtained when detecting the object at the target ambient temperature and the temperature of the object (i.e., the second change curve), relative to the change between the voltage value obtained when detecting a preset object at a preset ambient temperature and the actual temperature of the preset object (i.e., the first change curve).

[0161] Therefore, based on the determined change of the second variation curve relative to the first variation curve, the first variation curve can be adjusted to obtain the second variation curve. Since the first variation curve represents the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, the second variation curve can also represent the correspondence between the voltage value obtained from detecting the measured object and the actual temperature of the measured object, thus achieving temperature drift compensation. This, in turn, reduces the deviation between the final detected temperature of the measured object and the actual temperature of the measured object, improving the accuracy of the infrared detector's detection results.

[0162] In one embodiment, the target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

[0163] In one embodiment, the first internal irradiance corresponding to a target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and specified parameters;

[0164] The specified parameters include: the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature;

[0165] The structural parameters of the target structural unit include at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit.

[0166] In one embodiment, the first internal irradiance corresponding to a target structural unit is calculated based on the following formula:

[0167] E = μ1 × μ2 × T m

[0168] Wherein, E represents the first internal irradiance corresponding to the target structural unit; T represents the thermodynamic temperature of the target structural unit at the target ambient temperature; μ1 represents the first weight value corresponding to the target structural unit, which is obtained based on at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit; μ2 represents the second weight value corresponding to the target structural unit, which is obtained based on the temperature of the target structural unit at the target ambient temperature and / or the transmittance of the infrared detector at the target ambient temperature; and m represents a preset parameter.

[0169] In one embodiment, for each target structural unit, the first weight value corresponding to the target structural unit is positively correlated with the surface area of ​​the target structural unit, negatively correlated with the distance between the target structural unit and the infrared detector, positively correlated with the solid angle between the target structural unit and the infrared detector, and positively correlated with the emissivity of the target structural unit.

[0170] The second weight value corresponding to the target structural unit is positively correlated with the transmittance of the infrared detector at the target ambient temperature; at the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths less than a specified wavelength is less than a preset transmittance, then the second weight value corresponding to the target structural unit is negatively correlated with the temperature of the target structural unit at the target ambient temperature.

[0171] In one embodiment, the first change curve is represented by a first formula, which is:

[0172] y = k·R v (T1)·[E1(T2)+E2(T3)]·S·t+C

[0173] Wherein, for each pixel in the infrared detector, y represents the voltage value obtained by that pixel detecting the preset object at the preset ambient temperature; k represents the gain coefficient; T1 represents the temperature of the infrared detector at the preset ambient temperature; R v(T1) represents the second responsivity of the infrared detector at the preset ambient temperature; T2 represents the temperature of the preset object at the preset ambient temperature; E1(T2) represents the irradiance of the preset object on the pixel at the preset ambient temperature, where E1(T2) is a function of the object's temperature; T3 represents the temperature of each target structural unit at the preset ambient temperature; E2(T3) represents the sum of the second internal irradiances corresponding to each target structural unit; the second internal irradiance of a target structural unit represents the irradiance of that target structural unit on the infrared detector at the preset ambient temperature; S represents the area of ​​the pixel; t represents the circuit closing time of the infrared detector; C represents the offset coefficient.

[0174] The change curve adjustment module 402 is specifically used to replace the second response rate in the first formula with the first response rate of the infrared detector at the target ambient temperature.

[0175] Replace the sum of the second internal irradiance corresponding to each target structural unit in the first formula with the sum of the first internal irradiance corresponding to each target structural unit to obtain a formula for representing the second change curve corresponding to the target ambient temperature.

[0176] This application also provides a detection device, see [link to relevant documentation] Figure 5 , Figure 5 This is a schematic diagram of a detection device provided in an embodiment of this application. The device includes:

[0177] The voltage value acquisition module 501 is used to acquire the voltage value obtained by the infrared detector in the infrared device when detecting the target object at the target ambient temperature, and use it as the target voltage value.

[0178] The temperature calculation module 502 is used to calculate the temperature corresponding to the target voltage value according to the second change curve corresponding to the target ambient temperature, and use it as the temperature of the target object at the target ambient temperature.

[0179] The second change curve is obtained based on any of the change curve generation methods described above.

[0180] This application also provides an electronic device, such as... Figure 6 As shown, it includes:

[0181] Memory 601 is used to store computer programs;

[0182] When processor 602 executes a program stored in memory 601, it performs the following steps:

[0183] Obtain a first variation curve; wherein, the first variation curve represents the correspondence between the voltage value obtained by the infrared detector detecting a preset object at a preset ambient temperature and the actual temperature of the preset object;

[0184] Based on the sum of the first internal irradiance corresponding to each target structural unit in the infrared device to which the infrared detector belongs, and the first responsivity of the infrared detector at the target ambient temperature, the first variation curve is adjusted to obtain a second variation curve corresponding to the target ambient temperature; wherein, the second variation curve represents the correspondence between the voltage value obtained by the infrared detector from detecting the object under the target ambient temperature and the temperature of the object under the target ambient temperature; the first internal irradiance corresponding to a target structural unit represents the irradiance of the target structural unit on the infrared detector at the target ambient temperature.

[0185] Furthermore, the aforementioned electronic device may also include a communication bus and / or a communication interface, with the processor 602, the communication interface, and the memory 601 communicating with each other via the communication bus.

[0186] The communication bus mentioned in the above electronic devices can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, only one thick line is used to represent it in the diagram, but this does not mean that there is only one bus or one type of bus.

[0187] The communication interface is used for communication between the aforementioned electronic devices and other devices.

[0188] The memory may include random access memory (RAM) or non-volatile memory (NVM), such as at least one disk storage device. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor.

[0189] The processors mentioned above can be general-purpose processors, including central processing units (CPUs), network processors (NPs), etc.; they can also be digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0190] In another embodiment provided in this application, a computer-readable storage medium is also provided, which stores a computer program that, when executed by a processor, implements the steps of any of the above-described methods for generating or detecting change curves.

[0191] In another embodiment provided in this application, a computer program product containing instructions is also provided, which, when run on a computer, causes the computer to execute any of the change curve generation methods or detection methods described above.

[0192] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially as a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a storage medium (e.g., solid state disk (SSD)).

[0193] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0194] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on its differences from other embodiments. In particular, the embodiments for infrared devices, apparatuses, electronic devices, and storage media are basically similar to the method embodiments, so the descriptions are relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0195] The above description is merely a preferred embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application are included within the scope of protection of this application.

Claims

1. A method for generating a variation curve of an infrared detector, characterized in that, The method includes: Obtain a first variation curve; wherein, the first variation curve represents the correspondence between the voltage value obtained by the infrared detector detecting a preset object at a preset ambient temperature and the actual temperature of the preset object; The first change curve is obtained by: detecting a preset object at a preset ambient temperature and obtaining multiple voltage values ​​and the actual temperature of the preset object corresponding to the multiple voltage values; fitting the first change curve based on the obtained multiple sets of voltage values ​​and actual temperatures. The first change curve is represented by the first formula, which is: ； Specifically, for each pixel in the infrared detector... This represents the voltage value obtained by the pixel when detecting the preset object at the preset ambient temperature; Indicates the gain coefficient; This indicates the temperature of the infrared detector at the preset ambient temperature; This represents the second responsivity of the infrared detector at the preset ambient temperature; This indicates the temperature of the preset object at the preset ambient temperature; This represents the irradiance of the preset object on that pixel at the preset ambient temperature. It is a function with the temperature of the object as the independent variable; This indicates the temperature of each target structural unit in the infrared device to which the infrared detector belongs at the preset ambient temperature; The sum of the second internal irradiance corresponding to each target structural unit; the second internal irradiance corresponding to a target structural unit represents the irradiance of that target structural unit on the infrared detector at the preset ambient temperature; This indicates the area of ​​the pixel; This indicates the circuit closing time of the infrared detector; Indicates the offset coefficient; Replace the second response rate in the first formula with the first response rate of the infrared detector at the target ambient temperature; The sum of the second internal irradiance corresponding to each target structural unit in the first formula is replaced with the sum of the first internal irradiance corresponding to each target structural unit to obtain a formula for representing the second variation curve corresponding to the target ambient temperature; wherein, the second variation curve represents the correspondence between the voltage value obtained by the infrared detector at the target ambient temperature and the temperature of the object being measured; the first internal irradiance corresponding to a target structural unit represents the irradiance of the target structural unit to the infrared detector at the target ambient temperature; the second variation curve is used to determine the temperature corresponding to the target voltage value after obtaining the target voltage value obtained by the infrared detector in the infrared device at the target ambient temperature, as the temperature of the target object at the target ambient temperature.

2. The method according to claim 1, characterized in that, The target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

3. The method according to claim 1, characterized in that, The first internal irradiance corresponding to a target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and specified parameters; The specified parameters include: the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature; The structural parameters of the target structural unit include at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit.

4. The method according to claim 3, characterized in that, The first internal irradiance corresponding to a target structural unit is calculated based on the following formula: ； in, This represents the first internal irradiance corresponding to the target structural unit; This indicates the thermodynamic temperature of the target structural unit at the target ambient temperature; The first weight value corresponding to the target structural unit is obtained based on at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit. This represents the second weight value corresponding to the target structural unit. The second weight value corresponding to the target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and / or the transmittance of the infrared detector at the target ambient temperature. This indicates the preset parameters.

5. The method according to claim 4, characterized in that, For each target structural unit, the first weight value corresponding to the target structural unit is positively correlated with the surface area of ​​the target structural unit, negatively correlated with the distance between the target structural unit and the infrared detector, positively correlated with the solid angle between the target structural unit and the infrared detector, and positively correlated with the emissivity of the target structural unit. The second weight value corresponding to the target structural unit is positively correlated with the transmittance of the infrared detector at the target ambient temperature; At the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths less than a specified wavelength is less than a preset transmittance, then the second weight value corresponding to the target structural unit is negatively correlated with the temperature of the target structural unit at the target ambient temperature.

6. A detection method, characterized in that, The method includes: The voltage value obtained by the infrared detector in the infrared device when detecting the target object at the target ambient temperature is used as the target voltage value; The temperature corresponding to the target voltage value is calculated according to the second change curve corresponding to the target ambient temperature, and is taken as the temperature of the target object at the target ambient temperature; wherein, the second change curve is obtained based on the method described in any one of claims 1-5.

7. An infrared device, characterized in that, The infrared device includes: an infrared detector, a processor, and various target structural units; wherein the processor is used to execute the method according to any one of claims 1-5 or 6.

8. The infrared device according to claim 7, characterized in that, The target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

9. The infrared device according to claim 8, characterized in that, The infrared device further includes at least one of the following: a first temperature sensor for detecting the temperature of the lens, a second temperature sensor for detecting the temperature of the baffle, and a third temperature sensor for detecting the temperature of the infrared detector.

10. A device for generating a change curve of an infrared detector, characterized in that, The device includes: The change curve acquisition module is used to acquire a first change curve; wherein, the first change curve represents the correspondence between the voltage value obtained by the infrared detector detecting a preset object at a preset ambient temperature and the actual temperature of the preset object; The first change curve is obtained by: detecting a preset object at a preset ambient temperature and obtaining multiple voltage values ​​and the actual temperature of the preset object corresponding to the multiple voltage values; fitting the first change curve based on the obtained multiple sets of voltage values ​​and actual temperatures. The first change curve is represented by the first formula, which is: ； Specifically, for each pixel in the infrared detector... This represents the voltage value obtained by the pixel when detecting the preset object at the preset ambient temperature; Indicates the gain coefficient; This indicates the temperature of the infrared detector at the preset ambient temperature; This represents the second responsivity of the infrared detector at the preset ambient temperature; This indicates the temperature of the preset object at the preset ambient temperature; This represents the irradiance of the preset object on that pixel at the preset ambient temperature. It is a function with the temperature of the object as the independent variable; This indicates the temperature of each target structural unit in the infrared device to which the infrared detector belongs at the preset ambient temperature; The sum of the second internal irradiance corresponding to each target structural unit; the second internal irradiance corresponding to a target structural unit represents the irradiance of that target structural unit on the infrared detector at the preset ambient temperature; This indicates the area of ​​the pixel; This indicates the circuit closing time of the infrared detector; Indicates the offset coefficient; The change curve adjustment module is used to replace the second response rate in the first formula with the first response rate of the infrared detector at the target ambient temperature. The sum of the second internal irradiance corresponding to each target structural unit in the first formula is replaced with the sum of the first internal irradiance corresponding to each target structural unit to obtain a formula for representing the second variation curve corresponding to the target ambient temperature; wherein, the second variation curve represents the correspondence between the voltage value obtained by the infrared detector at the target ambient temperature and the temperature of the object being measured; the first internal irradiance corresponding to a target structural unit represents the irradiance of the target structural unit to the infrared detector at the target ambient temperature; the second variation curve is used to determine the temperature corresponding to the target voltage value after obtaining the target voltage value obtained by the infrared detector in the infrared device at the target ambient temperature, as the temperature of the target object at the target ambient temperature.

11. The apparatus according to claim 10, characterized in that, The target structural unit is determined based on at least one of the lens, cavity, and baffle in the infrared device.

12. The apparatus according to claim 10, characterized in that, The first internal irradiance corresponding to a target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and specified parameters; The specified parameters include: the structural parameters of the target structural unit, and / or the transmittance of the infrared detector at the target ambient temperature; The structural parameters of the target structural unit include at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit.

13. The apparatus according to claim 12, characterized in that, The first internal irradiance corresponding to a target structural unit is calculated based on the following formula: ； in, This represents the first internal irradiance corresponding to the target structural unit; This indicates the thermodynamic temperature of the target structural unit at the target ambient temperature; The first weight value corresponding to the target structural unit is obtained based on at least one of the following: the surface area of ​​the target structural unit, the distance between the target structural unit and the infrared detector, the solid angle between the target structural unit and the infrared detector, and the emissivity of the target structural unit. This represents the second weight value corresponding to the target structural unit. The second weight value corresponding to the target structural unit is obtained based on the temperature of the target structural unit at the target ambient temperature and / or the transmittance of the infrared detector at the target ambient temperature. This indicates the preset parameters.

14. The apparatus according to claim 13, characterized in that, For each target structural unit, the first weight value corresponding to the target structural unit is positively correlated with the surface area of ​​the target structural unit, negatively correlated with the distance between the target structural unit and the infrared detector, positively correlated with the solid angle between the target structural unit and the infrared detector, and positively correlated with the emissivity of the target structural unit. The second weight value corresponding to the target structural unit is positively correlated with the transmittance of the infrared detector at the target ambient temperature; At the target ambient temperature, if the transmittance of the infrared detector for infrared light with wavelengths less than a specified wavelength is less than a preset transmittance, then the second weight value corresponding to the target structural unit is negatively correlated with the temperature of the target structural unit at the target ambient temperature.

15. A detection device, characterized in that, The device includes: The voltage value acquisition module is used to acquire the voltage value obtained by the infrared detector in the infrared device when detecting the target object at the target ambient temperature, and use it as the target voltage value; A temperature calculation module is used to calculate the temperature corresponding to the target voltage value according to the second change curve corresponding to the target ambient temperature, and use it as the temperature of the target object at the target ambient temperature; wherein, the second change curve is obtained based on the method described in any one of claims 1-5.

16. An electronic device, characterized in that, include: Memory, used to store computer programs; A processor, when executing a program stored in memory, implements the method of any one of claims 1-5 or 6.

17. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the method described in any one of claims 1-5 or 6.

Images