Sensing electronics

Abstract

The present application relates to a sensing electronic device, comprising a substrate; a sensing array disposed on the substrate, wherein the sensing array comprises a first sensing electrode and a second sensing electrode; and a reference voltage control unit electrically connected with the sensing array, wherein in an operation interval, the reference voltage control unit has a first voltage, the first sensing electrode has a second voltage, and the second sensing electrode has a third voltage, wherein a difference between the first voltage and the second voltage is different from a difference between the first voltage and the third voltage.

Description

Technical Field

[0001] This invention relates to a sensing electronic device, and more particularly to a sensing electronic device capable of simultaneously sensing different objects under test. Background Technology

[0002] Traditional sensing electronic devices are mostly single-sensor devices, capable of detecting only one type of analyte at a time. To detect multiple analytes, the sensing electronic device must be replaced and the operation repeated, which is inconvenient and increases operation time. Furthermore, after detection, the analyte tends to adhere to the surface of the sensing electrodes, making it difficult to detach and shortening the lifespan of the sensing electrodes.

[0003] Therefore, there is an urgent need to provide a sensing electronic device in order to improve the shortcomings of traditional sensing electronic devices. Summary of the Invention

[0004] The present invention provides a sensing electronic device comprising a substrate; a sensing array disposed on the substrate, wherein the sensing array includes a first sensing electrode and a second sensing electrode; and a reference voltage control unit electrically connected to the sensing array, wherein, in an operating range, the reference voltage control unit has a first voltage, the first sensing electrode has a second voltage, and the second sensing electrode has a third voltage, wherein the difference between the first voltage and the second voltage is different from the difference between the first voltage and the third voltage.

[0005] The present invention also provides a sensing electronic device, comprising: a substrate; and a sensing array disposed on the substrate, wherein the sensing array includes a first sensing electrode, a second sensing electrode, a first reference electrode and a second reference electrode, the first sensing electrode corresponding to the first reference electrode and the second sensing electrode corresponding to the second reference electrode, wherein, in an operating range, the first reference electrode has a first voltage and the second reference electrode has a second voltage, wherein the first voltage and the second voltage are the same. Attached Figure Description

[0006] Figure 1 This is a schematic diagram of the sensing array of a sensing electronic device according to an embodiment of the present invention.

[0007] Figure 2A This is a schematic diagram of a sensing pixel unit according to an embodiment of the present invention.

[0008] Figure 2B for Figure 2A A cross-sectional view of line segment A-A'.

[0009] Figure 2C for Figure 2A A cross-sectional view of line segment B-B'.

[0010] Figure 3 This is a schematic diagram of a sensing pixel unit according to an embodiment of the present invention.

[0011] Figure 4 This is a schematic diagram of the sensing array of a sensing electronic device according to an embodiment of the present invention.

[0012] Figure 5 This is a voltage versus time graph of a portion of the sensing electronic device according to an embodiment of the present invention.

[0013] Figure 6 This is a voltage-current relationship diagram of a portion of the sensing electronic device according to an embodiment of the present invention.

[0014] Figure 7 This is a schematic diagram of the sensing array of a sensing electronic device according to an embodiment of the present invention.

[0015] Figure 8 This is a graph showing the relationship between current and time in a portion of the sensing electronic device according to an embodiment of the present invention.

[0016] Explanation of reference numerals in the attached figures:

[0017] 100 substrate

[0018] 11 Gate insulation layer

[0019] 12 Active Layer

[0020] 121 Polycrystalline silicon layer

[0021] 122 doped layer

[0022] 13, 14 Insulation layers

[0023] 200 Reference Voltage Control Unit

[0024] 201 First Reference Voltage Control Unit

[0025] 202 Second Reference Voltage Control Unit

[0026] 301 First Conductor

[0027] 302 Second Conductor

[0028] 401 and 402 drive units

[0029] 500 controller

[0030] Ar sensing array

[0031] P Sensing Area

[0032] P1 First Sensing Area

[0033] P2 Second Sensing Area

[0034] P3 Third Sensing Area

[0035] P4 Fourth Sensing Area

[0036] TFT transistor

[0037] TFT1 First Transistor

[0038] TFT2 Second Transistor

[0039] TFT3 Third Transistor

[0040] TFT4 Fourth Transistor

[0041] SE sensing electrode

[0042] SE' sensing unit

[0043] SE1 First Sensing Electrode

[0044] SE2 Second Sensing Electrode

[0045] SE3 Third Sensing Electrode

[0046] SE4 Fourth Sensing Electrode

[0047] RE reference electrode

[0048] RE1 First Reference Electrode

[0049] RE2 Second Reference Electrode

[0050] RE3 Third Reference Electrode

[0051] RE4 Fourth Reference Electrode

[0052] G gate

[0053] S source pole

[0054] D. Jiji

[0055] SL test solution

[0056] V RE Reference voltage

[0057] V SE Voltage

[0058] I DS I DS1 I DS3 Current

[0059] V1 First Voltage

[0060] V2 Second Voltage

[0061] V3 Third Voltage

[0062] Z-normal direction Detailed Implementation

[0063] The following are specific embodiments illustrating the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can be modified and changed in various ways for different viewpoints and applications without departing from the spirit of the present invention.

[0064] It should be noted that, unless otherwise specified herein, the term "a" component is not limited to having a single component, but may include one or more of the components. Furthermore, the ordinal numbers used in the specification and claims, such as "first" and "second," to modify components of a claim, do not in themselves imply or represent any prior ordinal number for that claimed component, nor do they represent the order of one claimed component with another, or the order of manufacture. The use of these ordinal numbers is solely to clearly distinguish one claimed component with a given name from another claimed component with the same name.

[0065] Throughout this specification and the appended claims, certain terms are used to refer to specific components. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same components. This document is not intended to distinguish between components that have the same function but different names. In the following specification and claims, words such as “comprising,” “containing,” and “having” are open-ended terms and should therefore be interpreted as “containing but not limited to…”. Thus, when the terms “comprising,” “containing,” and / or “having” are used in the description of this invention, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0066] In this text, the terms "about," "approximately," "actually," and "roughly" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantity is an approximate quantity; that is, even without specific mention of "about," "approximately," "actually," or "roughly," the meaning of these terms can still be implied. Furthermore, the phrases "range from the first value to the second value" or "range between the first value and the second value" indicate that the range includes the first value, the second value, and other values ​​in between.

[0067] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by those skilled in the art to which this invention pertains. It is understood that these terms, such as those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with the background or context of the relevant art and the present invention, and shall not be interpreted in an idealized or overly formal manner, unless specifically defined herein.

[0068] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used in the embodiments to describe the relative relationship of one component to another in the figures. It is understood that if the apparatus in the figures is flipped upside down, the component described as being on the "below" side will become the component on the "above" side. When a corresponding component (e.g., a membrane or region) is referred to as "disposed on another component," it can be directly on the other component, or there may be other components between them. On the other hand, when a component is referred to as "directly on another component," there are no components between them. Additionally, when a component is referred to as "on another component," there is a vertical relationship between them in the top view, and this component can be above or below the other component, depending on the orientation of the apparatus.

[0069] It should be noted that the technical solutions provided in the different embodiments below can be substituted for, combined or mixed with each other to constitute another embodiment without violating the spirit of the present invention.

[0070] Figure 1 This is a schematic diagram of a sensing array in a sensing electronic device according to an embodiment of the present invention. The sensing electronic device of the present invention can be applied to self-emissive devices, non-self-emissive devices, and antenna devices, but the present invention is not limited thereto.

[0071] like Figure 1 As shown, the sensing electronic device of the present invention includes: a substrate 100; a sensing array Ar disposed on the substrate 100; and a reference voltage control unit 200 electrically connected to the sensing array Ar. The sensing array Ar includes a plurality of sensing regions P, each sensing region P may have a transistor TFT; a sensing electrode SE electrically connected to the transistor TFT; and a reference electrode RE disposed corresponding to the sensing electrode SE and electrically connected to the reference voltage control unit 200. Here, "corresponding" means that when a voltage is applied to the reference electrode RE, the corresponding sensing electrode SE can have a voltage. Here, "electrical connection" can be achieved, for example, through direct contact or indirect contact through a conductive material such as a conductive dielectric layer. In the present invention, the number of sensing regions P is not particularly limited, for example... Figure 1The sensor array Ar shown contains 16 sensing regions P arranged in a 4x4 matrix, but the present invention is not limited thereto.

[0072] In addition, such as Figure 1 As shown, each transistor TFT may include a gate G electrically connected to the sensing electrode SE; and a source S and a drain D, respectively electrically connected to driving units 401 and 402 via a first wire 301 and a second wire 302, to transmit or receive signals. For example, driving unit 401 may be a scan driver, and driving unit 402 may be a data driver, but the invention is not limited thereto. Furthermore, the sensing electrodes SE in each sensing region P may be the same or different; when the sensing electrodes SE are different, different analytes can be detected simultaneously. In this embodiment, as... Figure 1 As shown, the reference electrode RE can be positioned adjacent to the corresponding sensing electrode SE, but the present invention is not limited thereto.

[0073] Figure 2A This is a schematic diagram of the sensing area according to an embodiment of the present invention. Figure 2B for Figure 2A A cross-sectional view of line segment A-A'. Figure 2C for Figure 2A A cross-sectional view of line segment B-B'. For ease of explanation, Figure 2A Some components are omitted, such as the gate G and the insulating layer 13.

[0074] The sensing array Ar of the present invention (e.g.) Figure 1 As shown, it is mainly fabricated using transistor technology, such as thin-film transistor (TFT) process, with the sensing array Ar disposed on a substrate 100. Figure 2A and Figure 2B As shown, firstly, a substrate 100 is provided. The material of the substrate 100 may be an inflexible substrate, a flexible substrate, a thin film, or a combination thereof. The material of the substrate 100 may include a quartz, a glass, a silicon wafer, a sapphire, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), or other plastics or polymers, or combinations thereof, but the present invention is not limited thereto.

[0075] A first conductive layer is formed on substrate 100, comprising a gate G and a sensing electrode SE, wherein the first conductive layer may comprise a single-layer stack or a multi-layer stack. Here, the materials of the gate G and the sensing electrode SE may each be a metal, a conductive metal oxide, or a combination thereof, but the invention is not limited thereto. Examples of metals include copper (Cu), nickel (Ni), gold (Au), silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), molybdenum (Mo), metal alloys, or combinations thereof, but the invention is not limited thereto. Examples of conductive metal oxides include indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or aluminum zinc oxide (AZO), but the invention is not limited thereto. Furthermore, the same or different materials / processes may be used to fabricate the gate G and the sensing electrode SE. In one embodiment of the invention, the materials of the gate G and the sensing electrode SE may be indium tin oxide. In one embodiment of the present invention, the materials of the gate G and the sensing electrode SE may be titanium-aluminum-titanium (Ti-Al-Ti). In this embodiment, although not shown in the figure, in other cross-sections, the sensing electrode SE may be electrically connected to the gate G to transmit the signal of the sensing electrode SE to the gate G.

[0076] Next, a gate insulating layer 11 is formed on the conductor layer, and the gate insulating layer 11 is disposed on the gate G. Here, the material of the gate insulating layer 11 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, resin, polymer, photoresist, or a combination thereof, but the present invention is not limited thereto.

[0077] Subsequently, an active layer 12 is formed on the gate insulating layer 11, and the active layer 12 is disposed on the gate G. In the normal direction Z of a substrate 100, the active layer 12 and the gate G at least partially overlap, for example, a portion of the active layer 12 overlaps with the gate G, the active layer 12 overlaps with a portion of the gate G, or the active layer 12 and the gate G overlap each other. Here, the material of the active layer 12 may include amorphous silicon (a-Si), low-temperature polycrystalline silicon (LTPS), or metal oxide. Examples of metal oxides include indium gallium zinc oxide (IGZO), aluminum indium zinc oxide (AIZO), hafnium indium zinc oxide (HIZO), indium tin zinc oxide (ITZO), indium gallium zinc tin oxide (IGZTO), or indium gallium tin oxide (IGTO), but the present invention is not limited thereto. In one embodiment of the present invention, the active layer 12 may be made of low-temperature polycrystalline silicon.

[0078] In this invention, such as Figure 2B As shown, the active layer 12 may include a polysilicon layer 121 and a doped layer 122, wherein the doped layer 122 is disposed on the polysilicon layer 121. Here, the doped layer 122 may be an n-type amorphous silicon layer, but the present invention is not limited thereto.

[0079] Next, a second conductor layer is formed on the active layer 12. The second conductor layer may comprise a single-layer stack or multiple-layer stacks, and the second conductor layer includes a source S and a drain D, wherein the source S and drain D are electrically connected to the active layer 12. Here, the material of the second conductor layer may include copper, nickel, gold, aluminum, titanium, chromium, molybdenum, tungsten, platinum, alloys thereof, or combinations thereof, but the present invention is not limited thereto.

[0080] The transistor TFT thus formed includes: a gate G; a partial gate insulating layer 11 disposed on the gate G; an active layer 12 disposed on the gate insulating layer 11 and also on the gate G; and a source S and a drain D disposed on the active layer 12 and electrically connected to the active layer 12, respectively. Furthermore, as... Figure 2B As shown, the active layer 12 also includes a polysilicon layer 121 and a doped layer 122, wherein the doped layer 122 is disposed on the polysilicon layer 121, and the source S and drain D are respectively disposed on the doped layer 122.

[0081] Subsequently, an insulating layer 13 is formed on the transistor TFT. Here, the material of the insulating layer 13 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, resin, polymer, photoresist, or a combination thereof, but the present invention is not limited thereto. Therefore, the sensing array Ar of the present invention may further include an insulating layer 13 disposed on the transistor TFT.

[0082] In addition, such as Figure 2B and Figure 2C As shown, a sensing unit SE' may also be provided on the sensing electrode SE for detecting the analyte. Here, the sensing unit SE' may be a biological material, such as biological tissue, microorganism, organelle, cell sensor, enzyme, antibody, nucleic acid, etc., biologically derived material or biomimetic material, but the present invention is not limited thereto.

[0083] In this invention, a reference electrode RE can be formed on the substrate 100. More specifically, in this embodiment, as... Figure 2B and Figure 2C As shown, the reference electrode RE can be disposed on the sensing electrode SE; in other words, the reference electrode RE can overlap with the sensing electrode SE in the normal direction Z of the substrate 100. In other embodiments of the invention, an insulating layer 14 is disposed between the reference electrode RE and the sensing electrode SE. In other embodiments of the invention, the reference electrode RE and the sensing electrode SE are separated from each other, but the invention is not limited thereto. However, in other embodiments of the invention, such as Figure 1 As shown, the reference electrode RE can be disposed adjacent to the sensing electrode SE; in other words, the reference electrode RE does not overlap with the sensing electrode SE in the normal direction Z of the substrate 100. Here, the material of the reference electrode RE includes silver / silver chloride, but the present invention is not limited thereto. The material of the insulating layer 14 is similar to that of the insulating layer 13, and will not be described again here.

[0084] In this invention, Figure 1 Each sensing region P shown can be as follows Figures 2A to 2C The sensing area P shown is replaced, and will not be described further here.

[0085] Figure 3 This is a schematic diagram of the sensing area according to an embodiment of the present invention.

[0086] like Figure 3As shown, in an operating range, the sensing electrode SE and the reference electrode RE are brought into contact with the test solution SL. The controller 500 provides a reference voltage VRE to the reference electrode RE. This causes the analyte in the test solution SL to approach the sensing electrode SE, resulting in a voltage VSE at the gate G connected to the sensing electrode SE. The voltage VSE changes depending on the concentration of the analyte in the test solution SL. The transistor TFT generates different currents IDS based on the changes in voltage VSE. The concentration of the analyte is detected by comparing the current IDS with a known database. Furthermore, by comparing the difference between the reference voltage VRE and the voltage VSE with a known database, for example, the pH value of different test solutions can be detected, but the invention is not limited to this.

[0087] In one embodiment of the present invention, the controller 500 can provide a negative-phase reference voltage to the reference electrode RE, which forces the object under test (DUT) on the sensing electrode SE to detach from the sensing electrode SE, thereby extending the lifespan of the sensing electrode SE. In this embodiment, although not shown in the figures, the controller 500 may include... Figure 1 The reference voltage control unit 200 and drive units 401 and 402 shown will not be described in detail here.

[0088] Figure 4 This is a schematic diagram of the sensing array of a sensing electronic device according to an embodiment of the present invention. Figure 4 The sensing array and Figure 1 Similar, except for the following differences.

[0089] like Figure 4 As shown, the sensing array Ar of this embodiment includes four sensing regions P1 to P4, which are adjacent to each other and arranged in a 2x2 matrix. However, the present invention is not limited thereto. Figure 4As shown, the sensing array Ar may include a first sensing region P1, a second sensing region P2, a third sensing region P3, and a fourth sensing region P4. The first sensing region P1 includes a first transistor TFT1; a first sensing electrode SE1 electrically connected to the first transistor TFT1; and a first reference electrode RE1 corresponding to the first sensing electrode SE1. The second sensing region P2 includes a second transistor TFT2; a second sensing electrode SE2 electrically connected to the second transistor TFT2; and a second reference electrode RE2 corresponding to the second sensing electrode SE2. The third sensing region P3 includes a third transistor TFT3; a third sensing electrode SE3 electrically connected to the third transistor TFT3; and a third reference electrode RE3 corresponding to the third sensing electrode SE3. The fourth sensing region P4 includes a fourth transistor TFT4; a fourth sensing electrode SE4 electrically connected to the fourth transistor TFT4; and a fourth reference electrode RE4 corresponding to the fourth sensing electrode SE4. In this design, the first transistor TFT1 is electrically connected to the third transistor TFT3, and the second transistor TFT2 is electrically connected to the fourth transistor TFT4. More specifically, the source S1 of the first transistor TFT1 is electrically connected to the source S3 of the third transistor TFT3, and the source S2 of the second transistor TFT2 is electrically connected to the source S4 of the fourth transistor TFT4. Therefore, the signal from the first sensing region P1 can be connected in series with the signal from the third sensing region P3, and the signal from the second sensing region P2 can be connected in series with the signal from the fourth sensing region P4. This can be used, for example, to amplify signals and improve the detection reliability of the sensing electronic device, but the present invention is not limited thereto.

[0090] Furthermore, although not shown in the figure, a first sensing unit may be disposed on the first sensing electrode SE1, and a second sensing unit may be disposed on the second sensing electrode SE2, wherein the first sensing unit is different from the second sensing unit. Here, sensing electrodes having the same filling pattern are represented as sensing electrodes having the same sensing unit, and sensing electrodes having different filling patterns are represented as sensing electrodes having different sensing units. More specifically, as shown in the figure... Figure 4 As shown, the first sensing unit of the first sensing electrode SE1 is different from the second sensing unit of the second sensing electrode SE2, while the first sensing unit of the first sensing electrode SE1 is the same as the third sensing unit of the third sensing electrode SE3. Similarly, the first sensing unit of the first sensing electrode SE1 is different from the fourth sensing unit of the fourth sensing electrode SE4. Therefore, it can be used to simultaneously detect different analytes.

[0091] like Figure 4As shown, in an operating range, when the reference voltage control unit 200 has a first voltage, that is, the reference voltage control unit 200 provides a first voltage to the first reference electrode RE1 and the second reference electrode RE2, the first sensing electrode SE1 may have a second voltage, and the second sensing electrode SE2 may have a third voltage, wherein the first reference electrode RE1 is adjacent to the second reference electrode RE2. Here, the "operating range" includes contacting the test solution containing the analyte with the sensing electronic device of the present invention, for example, immersing the sensing electronic device in the test solution containing the analyte, or dropping the test solution containing the analyte onto the sensing array of the sensing electronic device. Here, "having" means that when a voltage is provided to the reference electrode, the analyte in the test solution will be brought closer to the sensing electrode, so that the gate connected to the sensing electrode corresponding to the reference electrode has a voltage. In other embodiments of the present invention, the first reference electrode RE1 and the second reference electrode RE2 may be spaced apart from each other, that is, in the operating range, the reference electrodes between different rows or different columns may each have a first voltage or another voltage. With the above settings, different analytes can be detected simultaneously or the detection sensitivity and reliability can be further improved, but the present invention is not limited thereto.

[0092] Because the first sensing unit of the first sensing electrode SE1 is different from the second sensing unit of the second sensing electrode SE2, the second voltage of the first sensing electrode SE1 will be different from the third voltage of the second sensing electrode SE2. Therefore, the difference between the first voltage and the second voltage is different from the difference between the first voltage and the third voltage. More specifically, when two analytes are present in the solution to be tested, and the two analytes can be detected by the first sensing electrode SE1 and the second sensing electrode SE2 respectively, the first voltage is different from the second voltage and the third voltage, and the second voltage will be different from the third voltage. Therefore, the difference between the first voltage and the second voltage is not equal to 0, and the difference between the first voltage and the third voltage is not equal to 0. Alternatively, when one analyte is present in the solution to be tested, and the analyte can be detected by the first sensing electrode SE1, the first voltage is not the same as the second voltage, but the first voltage is the same as the third voltage. Therefore, the difference between the first voltage and the second voltage is not equal to 0, and the difference between the first voltage and the third voltage is 0.

[0093] In addition, such as Figure 4As shown, the reference voltage control unit 200 may include a first reference voltage control unit 201 and a second reference voltage control unit 202. The first reference voltage control unit 201 may be electrically connected to a first reference electrode RE1 and a second reference electrode RE2 to provide a reference voltage. The second reference voltage control unit 202 may be electrically connected to a third reference electrode RE3 and a fourth reference electrode RE4 to provide another reference voltage. In one embodiment of the invention, in an operating range, the reference voltage provided by the first reference voltage control unit 201 may be different from the other reference voltage provided by the second reference voltage control unit 202; therefore, the voltages of the first reference electrode RE1 and the second reference electrode RE2 may be different from the voltages of the third reference electrode RE3 and the fourth reference electrode RE4. In another embodiment of the invention, in an operating range, the reference voltage provided by the first reference voltage control unit 201 may be the same as the other reference voltage provided by the second reference voltage control unit 202; therefore, the voltages of the first reference electrode RE1 and the second reference electrode RE2 may be the same as the voltages of the third reference electrode RE3 and the fourth reference electrode RE4. Here, "same voltage" means that the absolute value of the voltage difference between the two voltages is less than or equal to 0.02V.

[0094] Furthermore, in other embodiments of the present invention, the following methods may be used: Figures 2A to 2C The sensing area P shown is replaced Figure 4 The sensing areas P1 to P4 shown in the figure will not be described again here.

[0095] Figure 5 This is a voltage-time graph of a portion of the sensing electronics according to an embodiment of the present invention. In this embodiment, a voltage-time relationship is used in a sensing electronic device comprising... Figure 4 The example shown is a sensing electronics device of a sensing array. Here, the filled pattern represents the contact between the sensing electronics device and the solution to be measured.

[0096] like Figure 4 and Figure 5As shown, when the sensing electronics are not in contact with the solution to be tested and no voltage is applied, the voltages of the first sensing electrode SE1, the first reference electrode RE1, the second sensing electrode SE2, and the second reference electrode RE2 are all 0V. When the sensing electronics come into contact with the solution to be tested, the sensing units of the sensing electrodes begin to adsorb the analyte, and therefore, the sensing electrodes adsorbing the analyte will have a voltage. Taking this embodiment as an example, it is known that the solution to be tested contains the analyte that can be detected by the first sensing electrode SE1, but does not contain the analyte that can be detected by the second sensing electrode SE2. Therefore, when the sensing electronics come into contact with the solution to be tested, the voltage VSE1 of the first sensing electrode SE1 is not 0V, while the voltage VSE2 of the second sensing electrode SE2 remains 0V. Then, when a first voltage V1 is provided to the first reference electrode RE1 and the second reference electrode RE2, the first sensing electrode SE1 will have a second voltage V2, and the second sensing electrode SE2 will have a third voltage V3. Subsequently, after the first voltage V1 is removed, the voltages of the first reference electrode RE1, the second reference electrode RE2, and the second sensing electrode SE2 (where no analyte is detected) return to 0V, while the first sensing electrode SE1 continues to be affected by the analyte, and its voltage VSE1 is not 0V. Then, when the sensing electronics are not in contact with the analyte solution, the voltage of the first sensing electrode SE1 returns to 0V, and the voltages of the first reference electrode RE1, the second reference electrode RE2, and the second sensing electrode SE2 remain at 0V. Here, the "voltage of the sensing electrode" refers to the gate voltage of the transistor electrically connected to the sensing electrode.

[0097] Because the first sensing electrode SE1 is affected by the analyte, the second voltage V2 will differ from the first voltage V1. Therefore, the difference ΔV1 between the first voltage V1 and the second voltage V2 is not equal to 0. However, the second sensing electrode SE2 is not affected by the analyte, and its third voltage V3 will be the same as the first voltage V1. Therefore, the difference ΔV2 between the first voltage V1 and the third voltage V3 is 0. Through the embodiments of the present invention, the goal of detecting different analytes within the same operating range can be achieved, and the operating time can be reduced. However, the present invention is not limited thereto.

[0098] Figure 6 This is a voltage-current relationship graph for a portion of the sensing electronics according to an embodiment of the present invention. Here, the filled line represents the contact between the sensing electronics and the solution to be measured.

[0099] like Figure 6As shown, when the sensing electronic device comes into contact with the solution to be tested, the sensing unit of the sensing electrode begins to adsorb the analyte. Therefore, the voltage VSE of the sensing electrode adsorbing the analyte will be greater than 0V, and this voltage can have a corresponding current IDS. The "current" refers to the magnitude of the source-drain current of the transistor electrically connected to the sensing electrode. When a voltage is applied to the reference electrode, the corresponding sensing electrode will have a voltage, and this voltage can correspond to a current. Therefore, the concentration of the analyte can be determined by comparing this current with a known database, but the present invention is not limited thereto.

[0100] Figure 7 This is a schematic diagram of the sensing array of a sensing electronic device according to an embodiment of the present invention. Figure 7 The sensing array and Figure 4 Similar, except for the following differences. Here, sensing electrodes with the same filling pattern are referred to as sensing electrodes with the same sensing unit, and sensing electrodes with different filling patterns are referred to as sensing electrodes with different sensing units.

[0101] like Figure 7 As shown, the first sensing unit of the first sensing electrode SE1 is the same as the second sensing unit of the second sensing electrode SE2 and the fourth sensing unit of the fourth sensing electrode SE4, while the first sensing unit of the first sensing electrode SE1 is different from the third sensing unit of the third sensing electrode SE3. Therefore, the sensing electronic device of the present invention can be used to simultaneously detect different analytes. In an operating range, the first reference voltage control unit 201 can provide a reference voltage, and the second reference control unit 202 can provide another reference voltage, wherein the reference voltage and the other reference voltage may be the same or different. When the solution contains an analyte detectable by the first sensing electrode SE1 but not by the analyte detectable by the third sensing electrode SE3, its voltage versus time graph is as follows: Figure 5 Similar to the example shown, more specifically, when the reference voltage provided by the first reference voltage control unit 201 to the first reference electrode RE1 is the same as another reference voltage provided by the second reference voltage control unit 202 to the third reference electrode RE3, and both are equal to the first voltage V1 (as shown in the example). Figure 5 As shown in VRE1 and VRE2), the first sensing electrode SE1 will have a second voltage V2, and the third sensing electrode SE3 will have a third voltage V3 (as shown in VRE1 and VRE2). Figure 5 (As shown in VSE2). Due to the influence of the analyte on the first sensing electrode SE1, the second voltage V2 will differ from the first voltage V1. Therefore, the difference ΔV1 between the first voltage V1 and the second voltage V2 is not equal to 0V; while the third sensing electrode SE3 is not affected by the analyte and is equal to... Figure 5Similar to VSE2 in the first voltage V1, the third voltage V3 will be the same as the first voltage V1. Therefore, the difference ΔV2 between the first voltage V1 and the third voltage V3 is 0V, but the present invention is not limited thereto.

[0102] Figure 8 This is a current-time graph of a portion of the sensing electronics according to an embodiment of the present invention. In this embodiment, a method including... Figure 7 The example shown is a sensing electronics device of a sensing array. Here, the filled line indicates that the sensing electronics device is in contact with the solution to be measured.

[0103] In this embodiment, as Figure 7 and Figure 8 As shown, the test solution contains the analyte detectable by the first sensing electrode SE1, but not by the analyte detectable by the third sensing electrode SE3. When the sensing electronics come into contact with the test solution, the first sensing electrode SE1 is affected by the analyte, generating a corresponding current IDS1, while the third sensing electrode SE3 is not affected by the analyte, and its current IDS3 is 0V. When a voltage is applied to the first reference electrode RE1 and the third reference electrode RE3, the first sensing electrode SE1 and the third sensing electrode SE3 generate corresponding currents IDS1 and IDS3, respectively. After the voltage is removed from the first reference electrode RE1 and the third reference electrode RE3, the current IDS3 of the third sensing electrode SE3 returns to 0V, while the first sensing electrode SE1 continues to be affected by the analyte, and its current IDS1 is not 0V. Subsequently, when the sensing electronics are no longer in contact with the test solution, the current IDS1 of the first sensing electrode SE1 returns to 0V, and the current IDS3 of the third sensing electrode SE3 remains at 0V. Here, the "current of the sensing electrode" refers to the source-drain current of the transistor electrically connected to the sensing electrode.

[0104] like Figure 7 As shown, since the first transistor TFT1 in the first sensing region P1 and the third transistor TFT3 in the third sensing region P3 are electrically connected, and more specifically, the source S1 of the first transistor TFT1 and the source S3 of the third transistor TFT3 are electrically connected, the current signal of the first sensing electrode SE1 can be connected in series with the current signal of the third sensing electrode SE3 to amplify the signal. The net current can be as follows: Figure 8 As shown in I1. The concentration of the analyte is determined by comparing this current with a known database, but the invention is not limited thereto.

[0105] The specific embodiments described above should be interpreted as merely illustrative and not as limiting the rest of the invention in any way. Features of different embodiments may be combined and used in combination as long as they do not conflict with each other.

Claims

1. A sensing electronic device, characterized in that, Include: Substrate; A sensing array is disposed on the substrate, wherein the sensing array includes a first sensing region and a second sensing region, wherein the first sensing region includes a first transistor, a first sensing electrode, and a first reference electrode, the first sensing electrode being electrically connected to the first transistor, and a first reference electrode being disposed corresponding to the first sensing electrode; the second sensing region includes a second transistor, a second sensing electrode, and a second reference electrode, the second sensing electrode being electrically connected to the second transistor, and a second reference electrode being disposed corresponding to the second sensing electrode; and The reference voltage control unit is electrically connected to both the first reference electrode and the second reference electrode. In the operating range, the reference voltage control unit has a first voltage, the first sensing electrode has a second voltage, and the second sensing electrode has a third voltage, wherein the difference between the first voltage and the second voltage is different from the difference between the first voltage and the third voltage.

2. The sensing electronic device according to claim 1, characterized in that, The first transistor includes a first gate, wherein the first gate is electrically connected to the first sensing electrode.

3. The sensing electronic device according to claim 1, characterized in that, A first sensing unit is disposed on the first sensing electrode, and a second sensing unit is disposed on the second sensing electrode, wherein the first sensing unit is different from the second sensing unit.

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