一种基于老化模型的抗故障注入传感器设计方法

By using a reciprocating transistor buffer chain and aging model simulation, and dynamically adjusting the confidence interval, the problem of missed and false alarms caused by sensor aging is solved, saving the number of devices and chip area, and improving the adaptability and accuracy of the sensor.

CN116842892BActive Publication Date: 2026-07-17UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Filing Date
2023-05-16
Publication Date
2026-07-17

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Abstract

本发明公开了一种基于老化模型的抗故障注入传感器设计方法，包括以下步骤：S1、搭建缓冲器链：包括延迟产生单元以及延迟采集单元；S2、采集缓冲器链相变信息：记录较上一个触发器输出发生翻转的D触发器的编号FNi，并平均处理，记为AFN；S3、对传感器电路进行老化仿真，得到不同老化情况下AFN的变化以及AFN与置信区间的对应关系，并由此制成查找表；S4、实时检查更新AFN，根据不同的AFN从查找表中动态调整置信区间；S5、当前AFN值超出以AFNN为中心的置信区间范围时，发出警报。本发明提出了一种新的缓冲器链结构以及一种新的自适应老化校准机制，不需要第二个传感器进行辅助，简化传感器结构，减少传感器所用的器件数量，减少其在芯片中所占面积。
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