控制电路以及半导体存储器
By employing a combination of a first bias module and a second bias module in the control circuit, the timing of the power switching signal is controlled, thus solving the problem of long recovery time of the bias module occupying tXP time and wasting power consumption, and achieving stability and energy saving effect.
CN116844601BActive Publication Date: 2026-07-17CHANGXIN MEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2022-03-25
- Publication Date
- 2026-07-17
Smart Images
Figure CN116844601B_ABST
Abstract
本公开实施例提供了一种控制电路以及半导体存储器，该控制电路包括偏置模块，偏置模块用于向功能模块提供偏置电流；偏置模块包括第一偏置模块和第二偏置模块，第一偏置模块用于提供第一偏置电流，第二偏置模块用于提供第二偏置电流；其中，第一偏置电流小于第二偏置电流，第一偏置模块用于在上电后处于常开状态，第二偏置模块用于接收偏置使能信号并基于偏置使能信号提供第二偏置电流。这样，该控制电路不仅可以保证偏置模块的稳定时间，而且还可以达到节省功耗的目的。
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