Apparatus and method for processing a substrate

Abstract

An apparatus and method for processing a substrate are provided. The method can include a first processing operation in which hydrogen radicals are transferred to a substrate conditioned to have a first temperature to process the substrate, and a second processing operation in which the hydrogen radicals are transferred to the substrate conditioned to have a second temperature different from the first temperature to process the substrate.

Description

Technical Field

[0001] This invention relates to an apparatus and method for processing a substrate. Background Technology

[0002] Because semiconductor devices are highly integrated, the size of the active region is also reduced. Consequently, the channel length of the MOS transistors formed in the active region can also be reduced. When the channel length of a MOS transistor decreases, the transistor's operating performance decreases due to the short-channel effect. Therefore, various studies are conducted to maximize device performance while reducing the size of the device formed on the substrate.

[0003] A typical example of such a device is a Fin Field-Effect Transistor (Fin-FET) device with a fin structure. This type of Fin-FET device can be formed by etching a substrate, such as a chip, containing silicon (Si). In this case, the surface roughness of the substrate produced during the etching process can lead to performance degradation of the transistor. Therefore, the damage and roughness of the substrate surface are generally improved by annealing, in which free radicals are transferred to the substrate surface. However, when annealing is performed on the substrate without properly removing impurities, the remaining impurities in the substrate cause performance degradation of the semiconductor device. Summary of the Invention

[0004] One object of the present invention is to provide an apparatus and method for processing substrates, which efficiently processes substrates.

[0005] Another object of the present invention is to provide an apparatus and method for processing a substrate, which performs surface treatment on the substrate efficiently.

[0006] Another object of the present invention is to provide an apparatus and method for processing a substrate, which efficiently removes residual impurities from the substrate.

[0007] Another object of the present invention is to provide an apparatus and method for processing a substrate, which efficiently improves the surface damage and roughness of the substrate.

[0008] The effects of the present invention are not limited to those described herein, and those skilled in the art to which this invention pertains will clearly understand, based on this specification and the accompanying drawings, any effects not mentioned.

[0009] An exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a process chamber having a processing space; a substrate support unit configured to support a substrate in the processing space and including a heater for regulating the temperature of the substrate; a gas supply unit configured to supply process gas to the processing space; a gas excitation unit configured to excite the process gas and generate free radicals; and a control unit wherein the control unit controls the gas supply unit and the gas excitation unit to generate free radicals by supplying process gas to the processing space, and controls the substrate support unit to regulate the temperature of the substrate to a first temperature, and then regulates the temperature of the substrate to a second temperature different from the first temperature while free radicals are transferred to the substrate.

[0010] According to an exemplary embodiment, the control unit can control the substrate support unit such that the second temperature is higher than the first temperature.

[0011] According to an exemplary embodiment, the control unit can control the substrate support unit such that the first temperature is between 50°C and 300°C.

[0012] According to an exemplary embodiment, the control unit can control the substrate support unit such that the second temperature is between 400°C and 700°C.

[0013] According to an exemplary embodiment, at least one exhaust port may be formed in the process chamber and connected to an exhaust line for discharging the processing space, and the control unit may control a pressure reducing member connected to the exhaust line such that the pressure in the processing space is between 10 millitors (mTorr) and 4 Torr (Torr).

[0014] According to an exemplary embodiment, germanium (Ge) impurities can be attached to a substrate treated with free radicals, and the substrate can be made of a silicon (Si) material.

[0015] According to an exemplary embodiment, the process gas supplied through the gas supply unit may include at least one selected from hydrogen and inert gases.

[0016] According to an exemplary embodiment, the gas excitation unit may include: a microwave power supply; and a microwave antenna configured to receive power applied through the microwave power supply and apply microwaves to the processing space.

[0017] Another exemplary embodiment of the present invention provides a substrate processing apparatus for processing a substrate with germanium (Ge) deposited on its surface. The substrate processing apparatus includes: a process chamber having a processing space; a substrate support unit configured to support the substrate in the processing space and including a temperature regulating member for regulating the temperature of the substrate; a gas supply unit configured to supply a hydrogen-containing process gas to the processing space; a gas excitation unit configured to excite the process gas and generate hydrogen radicals; and a control unit, wherein the control unit controls the gas supply unit and the gas excitation unit to perform a first processing operation and a second processing operation, wherein in the first processing operation, hydrogen radicals are transferred to the substrate to remove germanium, and in the second processing operation, hydrogen radicals are transferred to the substrate to improve the surface roughness of the substrate.

[0018] According to an exemplary embodiment, the control unit can control the substrate support unit such that the temperature of the substrate becomes a first temperature in a first processing operation, and the temperature of the substrate becomes a second temperature different from the first temperature in a second processing operation.

[0019] According to an exemplary embodiment, the control unit can control the substrate support unit such that the second temperature is higher than the first temperature.

[0020] According to an exemplary embodiment, the control unit can control the substrate support unit such that a first temperature is between 50°C and 300°C, and a second temperature is between 400°C and 700°C.

[0021] According to an exemplary embodiment, the substrate may be made of a silicon (Si)-containing material.

[0022] Another exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising: a first processing operation in which hydrogen radicals are transferred to a substrate at a temperature adjusted to a first temperature to process the substrate; and a second processing operation in which hydrogen radicals are transferred to a substrate at a temperature adjusted to a second temperature different from the first temperature to process the substrate.

[0023] According to an exemplary implementation, the second temperature may be higher than the first temperature.

[0024] According to an exemplary embodiment, the first temperature may be 50°C or higher and 300°C or lower.

[0025] According to an exemplary embodiment, the second temperature may be 400°C or higher and 700°C or lower.

[0026] According to an exemplary embodiment, the pressure within the vacuum chamber providing the space in which the substrate is processed can be 10 mTorr or more and 4 Torr or less.

[0027] According to an exemplary embodiment, in the first processing operation, germanium (Ge) impurities attached to the substrate can be removed, and a second processing operation can be performed after the first processing operation, wherein the surface roughness of the substrate made of a silicon (Si) material can be improved in the second processing operation.

[0028] According to an exemplary embodiment, the plasma including hydrogen radicals can be either a direct plasma or a remote plasma.

[0029] According to an exemplary embodiment of the present invention, it is possible to process the substrate efficiently.

[0030] Furthermore, according to an exemplary embodiment of the present invention, it is possible to minimize the transfer of impurities to the substrate by adjusting the electric field generated in the peripheral region of the substrate.

[0031] The effects of the present invention are not limited to those described herein, and those skilled in the art to which this invention pertains will clearly understand, based on this specification and the accompanying drawings, any effects not mentioned. Attached Figure Description

[0032] Figure 1 This is a diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0033] Figure 2 This is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention.

[0034] Figure 3 Is to show execution Figure 2 The diagram shows the substrate processing equipment for the first processing operation.

[0035] Figure 4 This indicates that during execution Figure 2 A diagram of the substrate after the first processing operation.

[0036] Figure 5 Is to show execution Figure 2 The diagram shows the substrate processing equipment for the second processing operation.

[0037] Figure 6 This indicates that during execution Figure 2 The image shows the substrate after the second processing operation.

[0038] Figure 7 This is a graph showing the efficiency of removing impurities attached to the substrate by free radicals based on the substrate temperature.

[0039] Figure 8 This is a diagram showing a substrate on which a first processing operation is performed when fins are formed on the substrate.

[0040] Figure 9 This is a diagram showing a substrate on which a first processing operation has been performed when fins are formed on the substrate.

[0041] Figure 10 This is a diagram showing a substrate on which a second processing operation is performed when fins are formed on the substrate.

[0042] Figure 11 This is a diagram showing a substrate on which a second processing operation has been performed when fins are formed on the substrate.

[0043] Figure 12 This is a diagram showing a substrate on which a first processing operation is performed when a sheet-like structure is formed.

[0044] Figure 13 This is a diagram showing a substrate on which a first processing operation has been performed when a sheet-like structure is formed.

[0045] Figure 14 This is a diagram showing a substrate on which a second processing operation is performed when a sheet-like structure is formed.

[0046] Figure 15 This is a diagram showing a substrate on which a second processing operation has been performed when a sheet-like structure is formed.

[0047] [Symbol Explanation]

[0048] 100: Process Chamber

[0049] 101: Processing Space

[0050] 102: Exhaust port

[0051] 105: Gas supply port

[0052] 121: Exhaust line

[0053] 123: Pressure-reducing components

[0054] 210: Dielectric plate

[0055] 211: First Supply Path

[0056] 220: Lower electrode

[0057] 221: Lower power supply

[0058] 222: Lower power switch

[0059] 230: Heater

[0060] 231: Heater power supply

[0061] 232: Heater power switch

[0062] 240: Support plate

[0063] 241: First Circulation Path

[0064] 242: Second Circulation Path

[0065] 243: Second Supply Flow Path

[0066] 251: Heat transfer medium supply line

[0067] 252: Heat transfer medium storage unit

[0068] 261: Cooling fluid supply line

[0069] 262: Cooling fluid storage unit

[0070] 263: Cooler

[0071] 270: Insulating board

[0072] 280: Focusing ring

[0073] 280: External Part

[0074] 280a: External part

[0075] 280b: External part

[0076] 300: Gas supply unit

[0077] 410: Microwave power supply

[0078] 420: Waveguide

[0079] 430: Microwave Antenna

[0080] 431: Antenna

[0081] 432: Slotted hole

[0082] 433: Antenna mast

[0083] 434: External Conductor

[0084] 436: Microwave Adapter

[0085] 441: Connector

[0086] 443: Cooling plate

[0087] 445: Antenna Height Adjustment Unit

[0088] 470: Dielectric plate

[0089] 480: Cooling plate

[0090] 500: Control Unit

[0091] A1: First Angle

[0092] A2: Second angle

[0093] H: Hydrogen radical

[0094] I: Impurities

[0095] P: Pattern

[0096] S10: First processing operation

[0097] S20: Second processing operation

[0098] T1: First temperature

[0099] T2: Second temperature

[0100] T 2-1 Temperature 2-1

[0101] T 2-2 Temperature 2-2

[0102] T3: Third Temperature

[0103] W: substrate Detailed Implementation

[0104] In the following description, exemplary embodiments of the invention will be described more fully with reference to the accompanying drawings, which illustrate exemplary embodiments of the invention. However, the invention may be implemented differently and is not limited to the following embodiments. In the following description of the invention, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid obscuring the objectives of the invention. Furthermore, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

[0105] Unless explicitly stated to the contrary, the words "comprise" and variations such as "comprises" or "comprising" shall be understood to imply the inclusion of the stated components, but not to exclude any other components. It will be understood that the terms "comprise" and "have" are intended to specify the presence of the features, numbers, steps, operations, constituent components, and combinations thereof described in this specification, and do not exclude the possibility of their prior existence or other than one or more other features, numbers, steps, operations, constituent components, and combinations thereof.

[0106] The singular expressions used in this article include plural expressions unless they have a completely opposite meaning in the context. Therefore, the shape, size, and similarities of components in the schema may be exaggerated for clearer description.

[0107] Terms such as first and second are used to describe various component parts, but the component parts are not limited by the terms. The terms are only used to distinguish one component part from another. For example, a first component part may be named a second component part without departing from the scope of the invention, and similarly, a second component part may be named a first component part.

[0108] It should be understood that when a component is said to be "coupled to" or "connected to" another component, a component may be directly coupled to or connected to the other component, but an intermediary component may also exist. In contrast, when a component is "directly coupled to" or "directly connected to" another component, it should be understood that no intermediary component exists. Other expressions describing relationships between components, such as "between" and "exactly between," or "adjacent to" and "directly adjacent to," should be interpreted similarly.

[0109] All terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one skilled in the art, unless they are defined differently. Terms defined in common dictionaries should be interpreted as having the meaning that matches the context of the relevant field, and should not be interpreted as having an ideal or overly formal meaning, unless they are clearly defined in this application.

[0110] In the following description, exemplary embodiments of the present invention will be referred to. Figures 1 to 15 Detailed description.

[0111] Figure 1 This is a diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0112] Reference Figure 1 The substrate processing equipment performs plasma processing on substrate W. The substrate processing equipment includes a process chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave application unit 400, and a control unit 500.

[0113] Process chamber 100 may have a processing space 101. Processing space 101 may be a space in which substrate W is processed. An opening (not shown) may be formed in a sidewall of process chamber 100. The opening is configured as a path through which substrate W can enter process chamber 100. The opening is opened / closed by a door (not shown). Vent 102 is formed in the bottom surface of process chamber 100. Vent 102 is connected to vent line 121. Vent line 121 may be connected to pressure reducing member 123. Pressure reducing member 123 may be a pump. Reaction byproducts generated during the process and residual gases inside process chamber 100 may be discharged to the outside via vent line 121.

[0114] Furthermore, the pressure in the processing space 101 can be reduced and maintained at a set pressure by the pressure reduction member 123 via the exhaust line 121. The pressure in the processing space 101 can be maintained at a near-vacuum pressure. That is, the process chamber 100 can be a vacuum chamber, wherein the pressure in the processing space 101 is maintained at a near-vacuum pressure while the substrate W is being processed. For example, the control unit 500, which will be described below, can control the pressure reduction member such that the pressure in the processing space 101 is between 10 mTorr and 4 Torr (e.g., 10 mTorr or more and 4 Torr or less).

[0115] The substrate support unit 200 is located inside the process chamber 100. The substrate support unit 200 supports the substrate W. The substrate support unit 200 includes an electrostatic chuck for absorbing the substrate W using electrostatic force.

[0116] The electrostatic chuck 200 includes a dielectric plate 210, a lower electrode 220, a heater 230, a support plate 240, an insulating plate 270, and a focusing ring 280.

[0117] A dielectric plate 210 is positioned at the upper portion of an electrostatic chuck 200. The dielectric plate 210 is configured as a dish-shaped dielectric material. A substrate W is placed on the upper surface of the dielectric plate 210. The upper surface of the dielectric plate 210 has a radius smaller than the radius of the substrate W. Therefore, the edge region of the substrate W is located on the outer side of the dielectric plate 210. A first supply path 211 is formed in the dielectric plate 210. The first supply path 211 is provided from the upper surface to the bottom surface of the dielectric plate 210. A plurality of first supply paths 211 are formed simultaneously and spaced apart from each other, and are configured as channels through which a heat transfer medium is supplied to the bottom surface of the substrate W.

[0118] The lower electrode 220 and heater 230 are embedded in the dielectric plate 210. The lower electrode 220 is positioned above the heater 230. The lower electrode 220 is electrically connected to the lower power supply 221. The lower power supply 221 includes a DC power supply. A lower power switch 222 is installed between the lower electrode 220 and the lower power supply 221. The lower electrode 220 can be electrically connected to the lower power supply 221 by turning the lower power switch 222 on / off. When the lower power switch 222 is turned on, DC current is supplied to the lower electrode 220. Power is applied between the lower electrode 220 and the substrate W through the current applied to the lower electrode 220, and the substrate W is absorbed into the dielectric plate 210 by the power.

[0119] Heater 230 can be a temperature regulating member that adjusts the temperature of substrate W to a set temperature. Furthermore, the heat generated by heater 230 on substrate W is maintained at a predetermined temperature. Heater 230 includes a helical coil. Heater 230 can be fixedly embedded in dielectric plate 210. Heater 230 can receive power from heater power supply 231 for heating. Furthermore, heater power switch 232 can be installed between heater 230 and heater power supply 231. Heater 230 can be electrically connected to heater power supply 231 by turning heater power switch 232 on / off. Furthermore, the temperature of heater 230 can change according to the amount of power applied to heater 230 through heater power supply 231. For example, the temperature of heater 230 can also increase proportionally to the amount of power applied to heater 230. Furthermore, heater 230 can be connected to heater sensor (not shown) that senses the temperature of heater 230. Heater sensor can detect the temperature of heater 230 in real time and transfer the detected real-time temperature of heater 230 to control unit 500. The control unit 500 can change the amount of power transferred to the heater 230 based on the temperature of the heater 230 detected by the heater sensor.

[0120] The support plate 240 is located below the dielectric plate 210. The bottom surface of the dielectric plate 210 and the upper surface of the support plate 240 can be bonded together by an adhesive 236. The support plate 240 may be made of aluminum. The upper surface of the support plate 240 may be stepped, such that the central region is higher than the edge region. The central region of the upper surface of the support plate 240 has a region corresponding to the bottom surface of the dielectric plate 210 and is bonded to the bottom surface of the dielectric plate 210. A first circulating flow path 241, a second circulating flow path 242, and a second supply flow path 243 are formed in the support plate 240.

[0121] The first circulating flow path 241 is configured as a channel through which the heat transfer medium circulates. The first circulating flow path 241 may be formed in a spiral shape inside the support plate 240. Alternatively, the first circulating flow path 241 may be configured such that annular flow paths with different radii have the same center. Each of the first circulating flow paths 241 may communicate with each other. The first circulating flow paths 241 are formed at the same height.

[0122] The second circulating flow path 242 is configured as a channel through which cooling fluid circulates. The second circulating flow path 242 may be formed in a spiral shape inside the support plate 240. Alternatively, the second circulating flow path 242 may be configured such that annular flow paths with different radii have the same center. Each of the second circulating flow paths 242 may communicate with each other. The second circulating flow path 242 may have a larger cross-sectional area than the first circulating flow path 241. The second circulating flow paths 242 are formed at the same height. The second circulating flow path 242 may be positioned below the first circulating flow path 241.

[0123] The second supply flow path 243 extends from the first circulation flow path 241 in the upper direction and is disposed on the upper surface of the support plate 240. The second supply flow path 243 is provided in a number corresponding to the number of the first supply flow paths 211, and connects the first circulation flow path 241 and the first supply flow path 211.

[0124] The first circulating flow path 241 is connected to the heat transfer medium storage unit 252 via the heat transfer medium supply line 251. The heat transfer medium is stored in the heat transfer medium storage unit 252. The heat transfer medium includes an inert gas. According to an exemplary embodiment, the heat transfer medium includes helium (He). Helium is supplied to the first circulating flow path 241 via the supply line 251 and is supplied to the bottom surface of the substrate W by sequentially passing through the second supply flow path 243 and the first supply flow path 211. Helium acts as a medium through which heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 200. Ion particles contained in the plasma region are attracted by the electrostatic force formed in the electrostatic chuck 200 and move to the electrostatic chuck 200, colliding with the substrate W during the movement process and performing an etching process. During the process of ion particles colliding with the substrate W, heat is generated in the substrate W. The heat generated in the substrate W is transferred to the electrostatic chuck 200 via helium supplied between the bottom surface of the substrate W and the upper surface of the dielectric plate 210. Therefore, substrate W can be maintained at the set temperature.

[0125] The second circulating flow path 242 is connected to the heat transfer medium storage unit 262 via the cooling fluid supply line 261. Cooling fluid is stored in the cooling fluid storage unit 262. A cooler 263 may be disposed inside the cooling fluid storage unit 262. The cooler 263 cools the cooling fluid to a predetermined temperature. Conversely, the cooler 263 may be mounted on the cooling fluid supply line 261. The cooling fluid supplied to the second circulating flow path 242 via the cooling fluid supply line 261 cools the support plate 240 while circulating along the second circulating flow path 242. The cooling of the support plate 240 cools the dielectric plate 210 and the substrate W together, thereby maintaining the substrate W at a predetermined temperature.

[0126] An insulating plate 270 is disposed below the support plate 240. The size of the insulating plate 270 is set to correspond to the size of the support plate 240. The insulating plate 270 is positioned between the support plate 240 and the bottom surface of the process chamber 100. The insulating plate 270 is made of insulating material and electrically insulates the support plate 240 from the process chamber 100.

[0127] A focusing ring 280 is disposed in the edge region of the electrostatic chuck 200. The focusing ring 280 has a ring shape and is arranged along the circumference of the dielectric plate 210. The upper surface of the focusing ring 280 may be stepped, such that the outer portion 280a is higher than the inner portion 280b. The inner portion 280b of the focusing ring 280 is positioned at the same height as the upper surface of the dielectric plate 210. The inner portion 280b of the focusing ring 280 is supported and positioned on the edge region of the substrate W at the outer side of the dielectric plate 210. The outer portion 280a of the focusing ring 280 is configured to surround the edge region of the substrate W. The focusing ring 280 expands the electric field forming region, such that the substrate W is positioned at the center of the region in which plasma is formed. Therefore, plasma is uniformly formed throughout the entire region of the substrate W, and each region of the substrate W can be uniformly etched.

[0128] Gas supply unit 300 supplies process gas to the processing space 101 of process chamber 100. Gas supply unit 300 supplies process gas to process chamber 100 via gas supply port 105 formed in the side wall of process chamber 100. The process gas supplied to processing space 101 by gas supply unit 300 may contain at least one gas selected from hydrogen and inert gases. Inert gases may include helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), and the like.

[0129] The microwave application unit 400 may be a gas excitation unit that applies microwaves to the processing space 101 of the process chamber 100 to excite process gases. For example, the microwave application unit 400 can generate plasma by exciting process gases. The plasma excited by this process may contain hydrogen radicals. The hydrogen radicals can be transferred to the substrate W to remove impurities attached to the substrate W or improve the surface roughness of the substrate W.

[0130] The microwave application unit 400 includes a microwave power supply 410, a waveguide 420, a microwave antenna 430, a dielectric block 450, an electrode plate 460, a dielectric plate 470, and a cooling plate 480.

[0131] Microwave power supply 410 generates microwaves. Waveguide 420 is connected to microwave power supply 410 and provides a path through which the microwaves generated in microwave power supply 410 are transferred.

[0132] Microwave antenna 430 is positioned inside the front end of waveguide 420. Microwave antenna 430 applies microwaves transferred via waveguide 420 to process chamber 100. For example, microwave antenna 430 can receive power applied through microwave power supply 410 and apply microwaves to processing space 101.

[0133] The microwave antenna 430 includes an antenna 431, an antenna mast 433, an external conductor 434, a microwave adapter 436, a connector 441, a cooling plate 443, and an antenna height adjustment unit 445.

[0134] Antenna 431 is configured as a thin dish, and a plurality of slots 432 are formed therein. The slots 432 provide channels for microwaves to pass through. The slots 432 can be configured in various shapes. The slots 432 can be configured in shapes such as "×", "+", and "-". The slots 432 can be combined with each other and configured into a plurality of ring shapes. The rings have a common center and different radii.

[0135] Antenna mast 433 is configured as a cylindrical rod. The longitudinal direction of antenna mast 433 is aligned vertically. Antenna mast 433 is positioned within the upper portion of antenna 431, and its lower end is inserted into and fixed to the center of antenna 431. Antenna mast 433 allows microwaves to propagate to antenna 431.

[0136] The outer conductor 434 is positioned below the front end of the waveguide 420. A space connecting to the interior space of the waveguide 420 is formed vertically inside the outer conductor 434. A localized portion of the antenna mast 433 is positioned inside the outer conductor 434.

[0137] Microwave adapter 436 is located inside the front end of waveguide 420. Microwave adapter 436 has a conical shape, with its upper end having a larger radius than its lower end. At the lower end of microwave adapter 436, a receiving space 437 with an open bottom is formed. The entrance 438 of the receiving space 437 has a relatively smaller radius than that of the inner region.

[0138] Connector 441 is positioned within receiving space 437. Connector 441 is arranged in a ring shape. The outer surface of connector 441 has a radius corresponding to the radius of the inner surface of receiving space 437. The outer surface of connector 441 contacts and is fixedly positioned with respect to the inner surface of receiving space 437. Connector 441 may be formed of a conductive material. The upper end of antenna mast 433 is positioned inside receiving space 437 and engages with the inner area of ​​connector 441. The upper end of antenna mast 433 is forcibly engaged with connector 441 and is electrically connected to microwave adapter 436 via connector 441.

[0139] Cooling plate 443 is coupled to the upper end of microwave adapter 436. Cooling plate 443 may be configured as a plate having a radius larger than that of the upper end of microwave adapter 436. Cooling plate 443 may be made of a material having a thermal conductivity superior to that of microwave adapter 436. Cooling plate 443 may be formed of copper (Cu) or aluminum (Al). Cooling plate 443 promotes cooling of microwave adapter 436 to prevent thermal deformation of microwave adapter 436.

[0140] Antenna height adjustment unit 445 connects microwave adapter 436 and antenna mast 433. Furthermore, antenna height adjustment unit 445 moves antenna mast 433, changing the relative height of antenna 431 and microwave adapter 436. Antenna height adjustment unit 445 includes a bolt. The bolt is inserted vertically into microwave adapter 436 from the bottom of the top, with its lower end located in receiving space 437. The bolt is inserted into the central area of ​​microwave adapter 436. The lower end of the bolt is inserted into the upper end of antenna mast 433. A screw groove of predetermined length is formed in the upper end of antenna mast 433 into which the lower end of the bolt is inserted and tightened. Antenna mast 433 moves vertically along the rotation of the bolt. For example, when the bolt rotates clockwise, antenna mast 433 can move upward, and when the bolt rotates counterclockwise, antenna mast 433 can move downward. Antenna 431 can move vertically together with the movement of antenna mast 433.

[0141] Dielectric plate 470 is located above antenna 431. Dielectric plate 470 has a dielectric material, such as aluminum oxide and quartz. Microwaves propagating from microwave antenna 430 in the vertical direction propagate in the radial direction of dielectric plate 470. The microwaves propagating to dielectric plate 470 are compressed microwaves and are resonant. The resonant microwaves are transmitted to slot aperture 432 of antenna 431.

[0142] A cooling plate 480 is disposed above the dielectric plate 470. The cooling plate 480 cools the dielectric plate 470. The cooling plate 480 may be made of aluminum. The cooling plate 480 cools the dielectric plate 470 by means of a cooling fluid flowing through a cooling flow path (not illustrated) formed therein. Cooling methods include water cooling and air cooling.

[0143] A dielectric block 450 is disposed below the antenna 431. The dielectric block 450 has a dielectric material, such as alumina or quartz. Microwaves passing through the slot 432 of the antenna 431 are radiated into the process chamber 100 via the dielectric block 450. The process gas supplied to the process chamber 100 is excited into a plasma state by the electric field of the radiated microwaves. The upper surface of the dielectric block 450 may be spaced apart from the bottom surface of the antenna 431 by a predetermined interval.

[0144] In the structure of microwave antenna 430, antenna height adjustment unit 445 restricts the horizontal movement of antenna mast 433. During the microwave propagation process, heat is generated in microwave adapter 436 and connector 441. This heat causes deformation of microwave adapter 436 and connector 441, and the fit between antenna mast 433 and connector 441 loosens due to deformation, allowing antenna mast 433 to move horizontally. When antenna mast 433 moves horizontally, the spacing between microwave adapter 436 and antenna mast 433 may vary depending on the viewing area. This spacing difference causes uneven microwave propagation to antenna mast 433. Furthermore, when antenna mast 433 comes into contact with microwave adapter 436 due to its movement, an arc may form. Antenna height adjustment unit 445 restricts the horizontal movement of antenna mast 433 relative to microwave adapter 436, thus preventing the aforementioned problems caused by thermal deformation of microwave adapter 436 and connector 441.

[0145] Furthermore, the antenna height adjustment unit 445 can move the antenna mast 433 vertically, thereby changing the relative height of the antenna 431 and the microwave adapter 436. When the fit of the antenna mast 433 loosens due to thermal deformation of the microwave adapter 436 and connector 441, the antenna 431 may contact the dielectric block 450 when the antenna mast 433 droops. The contact between the antenna 431 and the dielectric block 450 can also occur due to the thermal deformation of the antenna 431. The contact between the antenna 431 and the dielectric block 450 results in the loss of propagated microwaves. As described above, when the contact between the antenna 431 and the dielectric block 450 occurs, the antenna height adjustment unit 445 can move the antenna mast 433 upward, thereby maintaining a predetermined distance between the antenna 431 and the dielectric block 450. Furthermore, the antenna height adjustment unit 445 can maintain an appropriate distance between the antenna 431 and the dielectric block 450 by moving the antenna mast 433 vertically.

[0146] The control unit 500 can control the substrate processing equipment. The control unit 500 can control at least one of the substrate support unit 200, gas supply unit 300, and microwave application unit 400 of the substrate processing equipment, causing the substrate processing equipment to perform the substrate processing method described below. Furthermore, the control unit 500 may include: a process controller formed by a microprocessor (computer) that performs control of the substrate processing equipment; a user interface formed by a keyboard, through which an operator performs command input operations and the like for managing the substrate processing equipment; a display for visualizing and displaying the operating status of the substrate processing equipment or the like; and a storage unit for executing control programs for the processing performed in the substrate processing equipment under the control of the process controller or various data and programs, i.e., a processing link library for performing processing according to each configuration based on processing conditions is stored in the storage unit. Furthermore, the user interface and the storage unit can be connected to the process controller. The processing link library can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable disc such as a CD-ROM or DVD, or semiconductor memory such as flash memory.

[0147] Furthermore, the control unit 500 can maintain the temperature of the substrate W at a set temperature by adjusting the amount of power transferred to the heater 230 via the heater power supply 231. For example, the control unit 500 can identify the temperature of the heater 230 detected in real time by the heater sensor. In addition, parameters for changing the temperature of the substrate W according to the temperature of the heater 230 (these parameters are experimental data performed in advance) can be input into the control unit 500.

[0148] Figure 2 This is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention. (Refer to...) Figure 2 The substrate processing method according to an exemplary embodiment of the present invention may include a first processing operation S10 and a second processing operation S20. The first processing operation S10 and the second processing operation S20 may be performed sequentially. For example, the second processing operation S20 may be performed after the first processing operation S10 is performed. Furthermore, the substrate W processed by the first processing operation S10 and the second processing operation S20 may be made of a material including silicon (Si).

[0149] Figure 3 Is to show execution Figure 2 A diagram of the substrate processing equipment for the first processing operation. (Refer to...) Figure 3The first processing operation S10 may be an impurity removal operation in which remaining impurities I on the substrate W are removed. The impurities I removed in the first processing operation S10 may be byproducts generated during etching of the substrate W, or residual thin films formed on the substrate W that have not yet been removed by the etching process. For example, impurities I adhering to the substrate W may be compounds, including germanium (Ge). For example, impurities I may include SiGe or GeO.

[0150] In the first processing operation S10, the control unit 500 can maintain the temperature of the substrate W at a first temperature by controlling the substrate support unit 200. The first temperature can be between 50°C and 300°C (e.g., 50°C or higher and 300°C or lower). Furthermore, any remaining impurities I on the substrate W can be removed by maintaining the temperature of the substrate W at the first temperature while hydrogen free radicals H excited by the process gas are transferred to the surface of the substrate W.

[0151] When the first processing operation S10 is completed, the impurities I attached to the substrate W can be removed from the substrate W, such as... Figure 4 As shown.

[0152] Figure 5 Is to show execution Figure 2 A diagram of the substrate processing equipment for the second processing operation. (Refer to...) Figure 5 The second processing operation S20 can be a surface roughness improvement operation to reduce the surface roughness of the substrate W. The substrate W can be made of materials including silicon (Si) as described above.

[0153] In the second processing operation S20, the control unit 500 can maintain the temperature of the substrate W at a second temperature different from the first temperature by controlling the substrate support unit 200. The second temperature can be higher than the first temperature. The second temperature can be between 400°C and 700°C (e.g., 400°C or higher and 700°C or lower). Furthermore, the surface roughness of the substrate W can be improved by changing the temperature of the substrate W from the first temperature to the second temperature, and maintaining the temperature of the substrate W at the second temperature while hydrogen radicals H excited by the process gas are transferred to the surface of the substrate W.

[0154] When the second processing operation S20 is completed, the impurities attached to the substrate W can be removed as follows: Figure 6 The impurities are removed as shown. Furthermore, after the first processing operation S10 is performed, the second processing operation S20 is performed. That is, the second processing operation S20 is performed while the impurities have been removed from the substrate W, thereby minimizing the potential for performance degradation in the semiconductor device.

[0155] Figure 7 This is a graph illustrating the efficiency of removing impurities attached to the substrate using free radicals, based on the substrate temperature. Specifically, Figure 7 This is a graph showing the removal efficiency (etch rate) of impurity I by hydrogen radicals when the impurity (I) attached to the substrate W is a germanium (Ge) compound, depending on the temperature change of the substrate W.

[0156] Reference Figure 7 The etching rate of germanium (Ge)-containing compounds by hydrogen radicals is high between the first temperature T1 and the third temperature T3, and is particularly high at the second temperature T2. The first temperature T1 can be about 50°C, and the third temperature can be about 300°C. Furthermore, the second temperature T2 can be about 180°C. That is, when the impurity I attached to the substrate W is a germanium (Ge)-containing compound, the etching rate of impurity I by hydrogen radicals is highest when the temperature of the substrate W is adjusted to about 180°C. Therefore, in the first processing operation S10, it is probably preferable to maintain the temperature of the substrate W at about the second-first temperature (T2). 2-1 For example, approximately 160°C) or the second-to-second temperature (T 2-2 For example, at approximately 200°C.

[0157] That is, in the first processing operation S10 and the second processing operation S20 of the present invention, the temperature of the substrate W is maintained at a first temperature and a second temperature, respectively. As described above, the first temperature is 50°C to 300°C, and the second temperature is 400°C to 700°C.

[0158] The first and second temperatures can be classified according to the dominant temperature range in which silicon (Si) and germanium (Ge) become volatile species (SiH4, GeH4). When silicon (Si) and germanium (Ge) react with hydrogen radicals to become volatile species, silicon (Si) and germanium (Ge) can be removed from the surface of the substrate W.

[0159] The temperature range in which germanium (Ge) is removed by hydrogen radicals can be from 50°C to 300°C. Specifically, the highest etching rate of germanium (Ge) by hydrogen radicals is approximately 180°C. Now, in the first processing operation S10, impurities I including germanium (Ge) can be effectively removed from the substrate W.

[0160] Furthermore, in the first processing operation S10, it is preferable that the temperature of the substrate W does not exceed 300°C. Regarding the silicon (Si) forming the substrate W, the temperature range in which impurities are removed by hydrogen radicals H is approximately 300°C to 400°C. If the temperature of the substrate W in the first processing operation S10 exceeds 300°C not only because impurities containing germanium (Ge) are removed, but also because the substrate W itself may be damaged, then a temperature exceeding 300°C for the substrate W is inappropriate.

[0161] Furthermore, in the second processing operation S20, it is preferable that the temperature of the substrate W is maintained at about 400°C to about 700°C. Regarding silicon (Si), when the temperature of the substrate W is maintained at about 400°C to about 700°C in a hydrogen radical H atmosphere, silicon (Si) improves the surface roughness of the substrate W through surface diffusion.

[0162] Furthermore, in the second processing operation S20, it is preferable that the temperature of the substrate W exceeds 400°C. Regarding the silicon (Si) forming the substrate W, the temperature range in which impurities are removed by hydrogen radicals H is approximately 300°C to 400°C. When the temperature of the substrate W drops below 400°C in the second processing operation S20, the surface roughness of the substrate W will not be improved, but may cause damage to the substrate W itself, making a temperature below 300°C for the substrate W inappropriate.

[0163] That is, in the method for processing a substrate according to an exemplary embodiment of the present invention, after performing a first processing operation S10 to remove impurities from the substrate W, a second processing operation S20 is performed to improve the surface roughness of the substrate W, making it possible to improve the surface roughness of the substrate W more efficiently. Furthermore, it is possible to process the substrate W more efficiently and effectively by adjusting the temperature of the substrate W to a temperature at which impurities are easily removed in the first processing operation S10; and by adjusting the temperature of the substrate W to a temperature at which the surface roughness of the substrate W is easily improved in the second processing operation S20.

[0164] In the following text, application examples of the first processing operation S10 and the second processing operation S20 of the present invention will be described. For example Figure 8 As shown, a pattern P with a pin structure can be formed on a substrate W through patterning and etching processes. An impurity I containing germanium (Ge) can be attached to the pattern P.

[0165] When the first processing operation S10 is performed, hydrogen radicals H are transferred to substrate W, and the temperature of substrate W can be maintained at the first temperature (see...). Figure 8 When the first processing operation S10 is completed, the impurity I attached to the pattern P can be removed (see...). Figure 9 In this case, the angle formed between the upper surface and the side surface of pattern P can be a first angle A1.

[0166] When the second processing operation S20 is performed, hydrogen radicals H are transferred to substrate W, and the temperature of substrate W can be maintained at the second temperature (see...). Figure 10 When the second processing operation S20 is completed, the surface roughness of the substrate W can be improved (see...). Figure 11In this case, the angle formed between the upper surface and the side surface of the pattern P can be a second angle A2 that is close to a right angle. That is, the form of the pattern P formed on the substrate W can also be improved by the second processing operation S20.

[0167] Furthermore, hydrogen radicals (H) are non-directional. Therefore, even in sheet-like structures with spaces separated from the substrate W, patterns such as... Figure 12 When the process shown is formed on the substrate W, the first processing operation S10 and the second processing operation S20 can also be applied in the same or similar manner.

[0168] When the first processing operation S10 is performed, hydrogen radicals H are transferred to substrate W, and the temperature of substrate W can be maintained at the first temperature (see...). Figure 10 When the first processing operation S10 is completed, the impurity I attached to the pattern P can be removed (see...). Figure 11 ).

[0169] When the second processing operation S20 is performed, hydrogen radicals H are transferred to substrate W, and the temperature of substrate W can be maintained at the second temperature (see...). Figure 12 When the second processing operation S20 is completed, the surface roughness of the substrate W can be improved (see...). Figure 12 ).

[0170] In the exemplary embodiment, the substrate support unit 200 is described as an electrostatic chuck; however, the substrate support unit can support the substrate by various methods. For example, the substrate support unit 200 can be configured as a vacuum chuck that absorbs the substrate and maintains it in a vacuum.

[0171] The plasma containing hydrogen radicals (H) can be either direct plasma or remote plasma. Direct plasma can be generated directly within the processing space 101, while remote plasma is generated outside the processing space 101 and introduced into the reaction chamber. Conversely, the methods for generating plasma containing hydrogen radicals (H) can be varied, including radio frequency (RF) plasma methods, microwave plasma methods, inductively coupled plasma methods, capacitively coupled plasma methods, or electron cyclotron resonant plasma methods.

[0172] Furthermore, in the examples described, the generation of plasma including hydrogen radicals H via microwaves has been described as an example, but the invention is not limited thereto, and the exemplary embodiments described can be applied in the same or similar way to an apparatus including a temperature regulating member for regulating the temperature of a substrate and a plasma source for generating plasma from process gases.

[0173] The detailed description above exemplifies the present invention. Furthermore, the foregoing description illustrates and describes exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, the foregoing description can be modified or corrected within the scope of the concept of the invention disclosed herein, the scope equivalent to the scope of this disclosure, and / or the skill or knowledge in the art. The exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in the specific fields of application and use of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted as also including other exemplary embodiments.

Claims

1. An apparatus for processing a substrate, wherein, A pattern is formed on the substrate, and the pattern is any one of the following: a pattern having a pin structure and a pattern in a sheet-like structure having a space separate from the substrate; the device comprises: A process chamber, wherein the process chamber has a processing space; A substrate support unit configured to support a substrate in the processing space, and the substrate support unit includes a heater for regulating the temperature of the substrate. A gas supply unit configured to supply process gases to the processing space; A gas excitation unit configured to excite the process gas and generate free radicals; and Control unit The control unit controls the gas supply unit and the gas excitation unit to generate the free radicals by supplying the process gas to the processing space. The control unit controls the substrate support unit to adjust the temperature of the substrate to a first temperature, and then adjusts the temperature of the substrate to a second temperature different from the first temperature when the free radicals are transferred to the pattern on the substrate, in order to process the pattern. The control unit controls the substrate support unit such that the second temperature is higher than the first temperature, the first temperature is 50°C or higher and 300°C or lower, and the second temperature exceeds 400°C and is less than or equal to 700°C.

2. The apparatus of claim 1, wherein at least one exhaust port is formed in the process chamber and connected to an exhaust line for discharging the processing space, and The control unit controls the pressure-reducing component connected to the exhaust line, so that the pressure in the processing space is between 10 mTorr and 4 Torr.

3. The apparatus according to claim 1 or 2, wherein impurities containing germanium (Ge) are attached to the pattern on the substrate treated with the free radical, and The pattern on the substrate is made of a material containing silicon (Si).

4. The apparatus of claim 3, wherein the process gas supplied through the gas supply unit comprises at least one selected from hydrogen and inert gases.

5. The device according to claim 1 or 2, wherein the gas excitation unit comprises: Microwave power supply; and A microwave antenna configured to receive power applied through the microwave power supply and to apply microwaves to the processing space.

6. A substrate processing apparatus, wherein a pattern is formed on a substrate, and the pattern is any one of the following: a pattern having a pin structure and a pattern in a sheet-like structure having a space separated from the substrate; the substrate processing apparatus processes the pattern on the substrate with germanium (Ge) attached to its surface, the substrate processing apparatus comprising: A process chamber, wherein the process chamber has a processing space; A substrate support unit, configured to support a substrate in the processing space and including a temperature regulating member for regulating the temperature of the substrate; A gas supply unit configured to supply hydrogen-containing process gas to the processing space; A gas excitation unit configured to excite the process gas and generate hydrogen radicals; and Control unit The control unit controls the gas supply unit and the gas excitation unit to perform a first processing operation and a second processing operation to process the pattern. In the first processing operation, hydrogen radicals are transferred to the pattern on the substrate to remove germanium. In the second processing operation, hydrogen radicals are transferred to the pattern on the substrate to improve the surface roughness of the pattern on the substrate. The control unit controls the substrate support unit such that the temperature of the substrate becomes a first temperature during the first processing operation, and the temperature of the substrate becomes a second temperature higher than the first temperature during the second processing operation. The first temperature is 50°C or higher and 300°C or lower, and the second temperature exceeds 400°C and is less than or equal to 700°C. The pattern on the substrate is made of a material containing silicon (Si).

7. A method for processing a substrate, the method comprising the following steps: In a first processing operation, hydrogen radicals are transferred to a substrate at a temperature adjusted to a first temperature to process a pattern on the substrate; and In a second processing step, the hydrogen radicals are transferred to the substrate at a second temperature, which is adjusted to a temperature different from the first temperature, to process the pattern on the substrate. The second temperature is higher than the first temperature, wherein the first temperature is 50°C or higher and 300°C or lower, and the second temperature exceeds 400°C and is less than or equal to 700°C. The pattern is formed on the substrate through patterning and etching processes, and the pattern is any one of the following: a pattern with a pin structure and a pattern in a sheet structure having a space separate from the substrate.

8. The method of claim 7, wherein the pressure in the vacuum chamber providing the space in which the substrate is processed is 10 millitors or more and 4 tors or less.

9. The method of claim 7, wherein in the first processing operation, germanium-containing impurities on the pattern attached to the substrate are removed, and The second processing operation is performed after the first processing operation, and in the second processing operation, the surface roughness of the pattern on the substrate made of a silicon-containing material is improved.

10. The method of claim 7, wherein the plasma of the hydrogen radical is either a direct plasma or a remote plasma.

Images