SiC power semiconductor device integrated with schottky diode

Abstract

The application relates to a SiC power semiconductor device integrated with a Schottky diode, and belongs to the technical field of power semiconductor devices. A first type of conductive channel and a second type of conductive channel are in ohmic contact with a front first electrode metal above a SiC substrate, so as to simultaneously form a current channel of the power semiconductor device by using the first type of conductive channel and the second type of conductive channel; the front first electrode metal is also in Schottky contact with the SiC substrate corresponding to an active region, so as to form a plurality of Schottky contact regions for integration of the Schottky diode, the Schottky contact regions are located in the second type of conductive channel, and the Schottky contact regions are surrounded by a second type of conductive channel second conductive type doped region in the second type of conductive channel. The application can effectively realize integration of the Schottky diode, form good electric field protection, reduce reverse leakage, and has low turn-on voltage and low freewheeling loss when freewheeling is performed by using the integrated Schottky diode.

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