Method for manufacturing a display panel

Abstract

The application discloses a preparation method of a display panel, comprising the following steps: forming a driving substrate, one side of the driving substrate comprising a plurality of chip areas and a plurality of heat dissipation areas, each heat dissipation area being arranged in a gap between the chip areas; forming a plurality of micro light emitting diodes on the chip areas of the driving substrate; and forming a plurality of heat dissipation structures on the heat dissipation areas of the driving substrate by mass transfer. The embodiment of the application can improve the heat dissipation capacity of the display panel.

Description

Technical Field

[0001] This invention relates to display technology, and more particularly to a method for manufacturing a display panel. Background Technology

[0002] With the development of display technology, display panels are being used more and more widely, and the requirements for display panels are also getting higher and higher.

[0003] However, existing display panels suffer from severe overheating, which greatly reduces the luminous efficiency of the light-emitting diodes in the display panel and seriously affects the display effect. Summary of the Invention

[0004] This invention provides a method for manufacturing a display panel to reduce the heat generation of the display panel.

[0005] This invention provides a method for manufacturing a display panel, comprising:

[0006] A driving substrate is formed, one side of which includes multiple chip areas and multiple heat dissipation areas, each of which is disposed in the gap between the chip areas;

[0007] Multiple micro light-emitting diodes are formed in the chip area on the driving substrate, and multiple heat dissipation structures are formed in the heat dissipation area on the driving substrate by mass transfer.

[0008] Optionally, the formation of multiple micro-light-emitting diodes in the chip region on the driving substrate, and the formation of multiple heat dissipation structures by mass transfer of heat dissipation areas on the driving substrate, include:

[0009] A first temporary substrate is formed, and the first temporary substrate includes a plurality of miniature light-emitting diodes;

[0010] A second temporary substrate is formed, the second temporary substrate including multiple heat dissipation structures; a large number of miniature light-emitting diodes on the first temporary substrate are transferred to the chip area on the driving substrate;

[0011] A large number of heat dissipation structures on the second temporary substrate are transferred to the heat dissipation area on the driving substrate.

[0012] Optionally, forming the second temporary substrate includes:

[0013] A heat dissipation structure layer is formed on the first temporary substrate;

[0014] The heat dissipation structure layer is graphically represented to form the plurality of heat dissipation structures.

[0015] Optionally, the steps of forming a heat dissipation structure layer on the first temporary substrate and patterning the heat dissipation structure layer to form the plurality of heat dissipation structures are performed cyclically until the thickness of the heat dissipation structure reaches a first preset thickness; wherein the first preset thickness is greater than the thickness of the electrode of the micro light-emitting diode.

[0016] Optionally, before forming a plurality of micro-light-emitting diodes in the chip region on the driving substrate, and before forming a plurality of heat dissipation structures by mass transfer of the heat dissipation region on the driving substrate, the method further includes:

[0017] A composite temporary substrate is formed, the composite temporary substrate including a plurality of micro light-emitting diodes and a plurality of heat dissipation structures; the plurality of micro light-emitting diodes correspond to the chip area on the driving substrate, and the plurality of heat dissipation structures correspond to the heat dissipation area on the driving substrate.

[0018] Optionally, forming the composite temporary substrate includes:

[0019] The first electrode of the micro light-emitting diode is formed, and the first substructure of the heat dissipation structure is formed simultaneously.

[0020] The second electrode of the micro light-emitting diode is formed, and the second substructure of the heat dissipation structure is formed on the first substructure.

[0021] Optionally, after forming the second substructure of the heat dissipation structure on the first substructure, the method further includes:

[0022] The third substructure of the heat dissipation structure is formed on the second substructure in a loop until the thickness of the heat dissipation structure reaches a second preset thickness; wherein the second preset thickness is greater than the sum of the thickness of the first electrode and the thickness of the second electrode of the micro light-emitting diode, and less than or equal to the total thickness of the micro light-emitting diode.

[0023] Optionally, the formation of multiple micro-light-emitting diodes in the chip region on the driving substrate, and the formation of multiple heat dissipation structures by mass transfer of heat dissipation areas on the driving substrate, include:

[0024] Simultaneously, a large number of miniature light-emitting diodes and multiple heat dissipation structures are transferred to the driving substrate.

[0025] Optionally, a gap exists between the heat dissipation structure and the micro light-emitting diode.

[0026] Optionally, the heat dissipation structure is a multi-layer heat sink, a honeycomb porous structure, or a multi-column structure.

[0027] The technical solution of this invention employs a display panel fabrication method comprising: forming a driving substrate, the driving substrate including chip regions and heat dissipation regions, each heat dissipation region being disposed in the gaps between multiple chip regions; forming multiple micro-light-emitting diodes (LEDs) in the chip regions on the driving substrate; and forming multiple heat dissipation structures by mass transfer of the heat dissipation regions on the driving substrate. The heat dissipation structures exist between the gaps of the micro-LEDs, possessing excellent heat dissipation performance. When the display panel is in use, the heat generated by the micro-LEDs due to light emission can be dissipated to the outside of the display panel by the heat dissipation structures, thereby significantly reducing the temperature of the micro-LEDs, ensuring good luminous efficiency, and thus guaranteeing the display effect of the display panel. Furthermore, since the heat dissipation structures are fabricated on the driving substrate using a mass transfer method, no special or additional process steps are required to enhance the heat dissipation capacity of the display panel, which helps to reduce the cost of display panel fabrication. Attached Figure Description

[0028] Figure 1 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention;

[0029] Figures 2 to 8 A schematic diagram showing the structure formed corresponding to the main steps of the display panel manufacturing method provided in the embodiments of the present invention;

[0030] Figure 9 This is a schematic diagram of a heat dissipation structure provided in an embodiment of the present invention;

[0031] Figure 10 This is a schematic diagram of another heat dissipation structure provided in an embodiment of the present invention;

[0032] Figure 11 This is a schematic diagram of another heat dissipation structure provided in an embodiment of the present invention. Detailed Implementation

[0033] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0034] Figure 1 A flowchart illustrating a method for fabricating a display panel according to an embodiment of the present invention is provided, with reference to... Figure 1 The manufacturing methods for the display panel include:

[0035] Step S110: Form a driving substrate. One side of the driving substrate includes multiple chip areas and multiple heat dissipation areas. Each heat dissipation area is disposed in the gap between the chip areas.

[0036] Specifically, Figures 2 to 8 This is a schematic diagram showing the structural steps corresponding to the main steps of the display panel fabrication method provided in the embodiments of the present invention, combined with... Figures 1 to 3 The driving substrate 1 provides driving signals to the micro-LEDs and includes pixel circuits corresponding to each micro-LED. The specific structure of the driving substrate 1 may include a substrate, a driving circuit layer, etc. The driving circuit layer typically includes an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, and source / drain electrode layers. Chip regions 11 are disposed on the driving substrate 1, and metal electrodes are disposed on the chip regions 11. These metal electrodes are used to connect to the micro-LEDs, thereby providing driving signals to the micro-LEDs. Since adjacent chip regions 11 are not in direct contact but have a large gap, heat dissipation regions 12 can be disposed between the chip regions 11, with each heat dissipation region 12 located in the gap between the chip regions 11. The heat dissipation regions 12 are used to house heat dissipation structures. It should be noted that... Figure 2 The shape, size, and positional relationship of the chip region 11 and the heat dissipation region 12 are merely illustrative. The density of the heat dissipation region 12 may be the same as or different from that of the chip region 11; this embodiment does not impose any specific limitations on this.

[0037] In step S120, multiple micro-light-emitting diodes are formed in the chip area on the driving substrate, and multiple heat dissipation structures are formed in the heat dissipation area on the driving substrate by mass transfer.

[0038] Specifically, such as Figure 3As shown, multiple miniature light-emitting diodes (LEDs) 21 are formed in the chip region 11. These miniature LEDs 21 include LEDs of various colors, such as red, green, and blue. The structures of the LEDs of each color are well-known to those skilled in the art; for example, the materials of the light-emitting layers of different colored LEDs are different, and their specific structures will not be described in detail here. Multiple LEDs 21 can be transferred to the chip region 11 of the driving substrate using a mass transfer method. One color of LED can be transferred first, then another color, or different colors can be transferred simultaneously. The mass transfer method can be, for example, a stamping method, where a certain number of LEDs 21 are picked up by a transfer device, then aligned with the chip region 11 on the driving substrate and released. This picking, moving, and releasing process is repeated until all chip regions 11 are equipped with LEDs 21. Finally, the connection between the LEDs 21 and the driving substrate 1 is solidified by methods such as heat welding. Furthermore, the heat dissipation structure 22 in this embodiment can be transferred using the same device and method as the micro LED 21. That is, a certain number of heat dissipation structures 22 are picked up by the transfer device, and then released from the heat dissipation area 12 on the driving substrate 1. The process of picking up, moving, and releasing is repeated until all heat dissipation areas 12 are equipped with heat dissipation structures 22. Finally, the connection between the heat dissipation structure 22 and the driving substrate 1 is solidified by heating and welding or other methods. It should be noted that the order of transferring the micro LED 21 and the heat dissipation structure 22 is not specifically limited. They can be transferred simultaneously, or the micro LED 21 can be transferred first and then the heat dissipation structure 22 can be transferred, or the heat dissipation structure 22 can be transferred first and then the micro LED 21 can be transferred.

[0039] In this embodiment of the display panel, a heat dissipation structure 22 exists between the gaps of the micro-LEDs 21. This heat dissipation structure 22 has excellent heat dissipation performance. When the display panel is in use, the heat generated by the micro-LEDs 21 during light emission can be dissipated to the outside of the display panel by the heat dissipation structure 22, thereby greatly reducing the temperature of the micro-LEDs 21 and ensuring good luminous efficiency, thus guaranteeing the display effect of the display panel. Furthermore, since the heat dissipation structure 22 is fabricated on the driving substrate using a mass transfer method, the heat dissipation capacity of the display panel can be enhanced without special or additional process steps, which helps to reduce the cost of display panel manufacturing. Additionally, since the micro-LEDs 21 and the heat dissipation structure 22 are both located on the same side of the driving substrate, the overall thickness and area of ​​the display panel are not increased.

[0040] The technical solution of this embodiment employs a display panel fabrication method comprising: forming a driving substrate, the driving substrate including multiple chip regions and multiple heat dissipation regions, each heat dissipation region being disposed in the gap between the chip regions; forming multiple micro-light-emitting diodes (LEDs) in the chip regions on the driving substrate; and forming multiple heat dissipation structures by mass transfer of the heat dissipation regions on the driving substrate. The heat dissipation structures exist between the gaps of the micro-LEDs, and these structures have excellent heat dissipation performance. When the display panel is in use, the heat generated by the micro-LEDs due to light emission can be dissipated to the outside of the display panel by the heat dissipation structures, thereby greatly reducing the temperature of the micro-LEDs, ensuring good luminous efficiency, and thus guaranteeing the display effect of the display panel. Furthermore, since the heat dissipation structures are fabricated on the driving substrate using a mass transfer method, the heat dissipation capacity of the display panel can be enhanced without special or additional process steps, which helps to reduce the cost of display panel fabrication.

[0041] It should be noted that after heat dissipation structures 22 are provided in all heat dissipation areas 12 and micro light-emitting diodes are provided in all chip areas 11, there may be a gap between the micro light-emitting diodes 21 on the driving substrate 1 and the heat dissipation structures 22, or the heat dissipation structures 22 may surround the micro light-emitting diodes 21, be connected to the micro light-emitting diodes 21, or be attached to the structure of the micro light-emitting diodes 21, etc.

[0042] Optionally, before forming multiple micro-light-emitting diodes in the chip region on the driving substrate and forming multiple heat dissipation structures in the heat dissipation region on the driving substrate by mass transfer, the method further includes:

[0043] A first temporary substrate is formed, and the first temporary substrate includes a plurality of miniature light-emitting diode chips;

[0044] A second temporary substrate is formed, and the second temporary substrate includes multiple heat dissipation structures;

[0045] Multiple micro-light-emitting diodes are formed in the chip area on the driving substrate, and multiple heat dissipation structures are formed in the heat dissipation area on the driving substrate through mass transfer, including:

[0046] A large number of miniature light-emitting diodes on the first temporary substrate are transferred to the chip area on the driving substrate;

[0047] Multiple heat dissipation structures on the second temporary substrate are transferred in large quantities to the heat dissipation area on the driving substrate.

[0048] Specifically, such as Figure 4As shown, the first temporary substrate 2 has a plurality of micro light-emitting diodes 21, and the micro light-emitting diodes 21 on the first temporary substrate 2 are all the same color; the arrangement of the micro light-emitting diodes 21 on the first temporary substrate 2 can be the same as the arrangement of the chip area 11 in the driving substrate 1 for setting the corresponding color. The first temporary substrate 2 can be, for example, a sapphire substrate or a silicon substrate; the formation method of the first temporary substrate 2 is the same as the existing formation method of temporary substrates containing micro light-emitting diodes 21, that is, including epitaxial formation of epitaxial structure, etching of epitaxial structure, deposition of metal electrodes, etc.

[0049] like Figure 5 As shown, the second temporary substrate 3 is an independent temporary substrate. The second temporary substrate 3 is only used to form the heat dissipation structure 22. The arrangement of the heat dissipation structure 22 is the same as the arrangement of the heat dissipation area 12 on the driving substrate 1. The second temporary substrate 3 can be, for example, a sapphire substrate or a silicon substrate.

[0050] After forming the first temporary substrate 2 and the second temporary substrate 3, the miniature light-emitting diode 21 on the first temporary substrate 2 can be transferred to the driving substrate, and the heat dissipation structure 22 on the second temporary substrate 3 can be transferred to the driving substrate. The order of transfer is not limited; the heat dissipation structure 22 can be transferred first, followed by the miniature light-emitting diode 21, or the miniature light-emitting diode 21 can be transferred first, followed by the heat dissipation structure 22.

[0051] In this embodiment, the micro light-emitting diode 21 and the heat dissipation structure 22 are respectively disposed on different temporary substrates, which can be compatible with the existing manufacturing process of the micro light-emitting diode 21, thereby making it more conducive to reducing the manufacturing cost of the display panel.

[0052] Optionally, forming the second temporary substrate includes:

[0053] A heat dissipation structure layer is formed on the first temporary substrate; such as Figure 6 As shown, the first temporary substrate 31 can be, for example, a sapphire substrate or a silicon substrate. A heat dissipation structure layer 220 can be formed on the entire surface of the first temporary substrate 31. The material of the heat dissipation structure layer 220 can be, for example, a metal or other good conductor of heat, and the formation method can be, for example, vapor deposition, electroplating, etc.; subsequently, as... Figure 7 As shown, a patterned heat dissipation structure layer 220 is used to form multiple heat dissipation structures 22. The patterned heat dissipation structure layer 220 can be formed by photolithography etching or lift-off methods, and preferably, since the heat dissipation structure 22 and the micro light-emitting diode 21 are fabricated on different temporary substrates in this embodiment, the heat dissipation structure can be fabricated using a lift-off method, which allows for a larger thickness and further improves the heat dissipation capacity.

[0054] Preferably, the method for manufacturing the display panel further includes: repeatedly performing the steps of forming a heat dissipation structure layer and a patterned heat dissipation structure layer on a first temporary substrate to form a plurality of heat dissipation structures until the thickness of the heat dissipation structure reaches a first preset thickness; wherein the first preset thickness is greater than the thickness of the electrode of the micro light-emitting diode.

[0055] Specifically, the greater the thickness of the heat dissipation structure 22, the stronger its heat dissipation capacity. However, due to limitations in the manufacturing process, the thickness of the heat dissipation structure 22 produced in one go may be relatively small. Therefore, it can be produced multiple times until the thickness of the heat dissipation structure 22 reaches the first preset thickness, thereby further increasing the heat dissipation capacity of the heat dissipation structure 22. The first preset thickness can be the thickness of the thicker electrode in the micro light-emitting diode 21. Of course, in some other embodiments, the first preset thickness can also be other thicknesses.

[0056] Optionally, such as Figure 8 As shown, before forming multiple micro-light-emitting diodes in the chip area on the driving substrate, and before forming multiple heat dissipation structures in the heat dissipation area on the driving substrate through mass transfer, the process further includes:

[0057] A composite temporary substrate 4 is formed, which includes a plurality of micro light-emitting diodes 21 and a plurality of heat dissipation structures 22; the plurality of micro light-emitting diodes 21 correspond to the chip area 11 on the driving substrate, and the plurality of heat dissipation structures 22 correspond to the heat dissipation area 12 on the driving substrate.

[0058] Specifically, the composite temporary substrate 4 may include, for example, a composite temporary substrate, multiple micro-light-emitting diodes 21, and multiple heat dissipation structures 22. The micro-light-emitting diodes 21 on the composite temporary substrate 4 emit the same color, that is, the micro-light-emitting diodes 21 on the composite temporary substrate 4 correspond only to a portion of the chip area 11. The heat dissipation structures 22 on the composite temporary substrate 4 may correspond to all heat dissipation areas 12 or only a portion of the heat dissipation areas 12. The micro-light-emitting diodes 21 on the composite temporary substrate 4 may be one of red, blue, or green micro-light-emitting diodes. When the heat dissipation structure 22 on the composite temporary substrate 4 corresponds to all heat dissipation areas 12, only the corresponding color micro-light-emitting diodes need to be set on the temporary substrates corresponding to other colors of micro-light-emitting diodes. When the heat dissipation structure 22 on the composite temporary substrate 4 corresponds to a portion of the heat dissipation areas 12, heat dissipation structures 22 can also be set on the temporary substrates corresponding to other colors of micro-light-emitting diodes 21, so that each heat dissipation area 12 on the driving substrate after transfer has a heat dissipation structure 22. In this embodiment, since the heat dissipation structure 22 and the micro light-emitting diode 21 are disposed on the same composite temporary substrate, fewer temporary substrates are required, which can save material costs in the manufacturing of the display panel.

[0059] Optionally, forming a composite temporary substrate includes: forming a first electrode of a micro light-emitting diode and simultaneously forming a first substructure of a heat dissipation structure; forming a second electrode of a micro light-emitting diode and simultaneously forming a second substructure of a heat dissipation structure on the first substructure.

[0060] Specifically, the micro-LED includes two electrodes: a first electrode and a second electrode, which are respectively connected to N-type GaN and P-type GaN. The two electrodes can be fabricated separately, requiring a two-step electrode fabrication process. In this case, each time an electrode is fabricated, a heat dissipation substructure is stacked on the composite temporary substrate. The first substructure has the same thickness as the first electrode, and the second substructure has the same thickness as the second electrode. The second substructure is stacked on the first substructure and electrically connected to the first substructure. Thus, the existing micro-LED fabrication process can be used to create a thicker heat dissipation structure, thereby increasing the heat dissipation thickness of the heat dissipation structure without increasing the number of process steps, enhancing the heat dissipation capacity of the heat dissipation structure, and thus enhancing the heat dissipation capacity of the display panel. Of course, it should be noted that forming micro-light-emitting diodes also includes forming other film structures, which can be achieved through epitaxy and etching. For example, an epitaxial structure consisting of an N-type GaN layer, an active layer, and a P-type GaN layer can be formed on a substrate. Then, the epitaxial structure can be etched to pixelate the micro-light-emitting diodes on the substrate (that is, to form multiple independent micro-light-emitting diodes). Then, a first electrode connected to the N-type GaN and a second electrode connected to the P-type GaN can be formed respectively.

[0061] Optionally, after the second substructure forming the heat dissipation structure on the first substructure, the following is also included:

[0062] The third substructure of the heat dissipation structure is formed on the second substructure in a loop until the thickness of the heat dissipation structure reaches the second preset thickness, wherein the second preset thickness is greater than the sum of the thickness of the first electrode and the thickness of the second electrode of the micro light-emitting diode, and less than or equal to the total thickness of the micro light-emitting diode.

[0063] Specifically, due to the influence of the metal film manufacturing process, the thickness of the first and second electrodes may be relatively small. That is, even if the heat dissipation structure includes the first and second substructures, it may be relatively thin. Since the total thickness of the micro LED is relatively large compared to the thickness of the electrodes, the third substructure can be cyclically manufactured on the second substructure to make the thickness of the heat dissipation structure reach the second preset thickness, thereby further increasing the thickness of the heat dissipation structure and enhancing the heat dissipation capacity.

[0064] Optionally, forming multiple micro-light-emitting diodes in the chip area on the driving substrate and forming multiple heat dissipation structures by mass transfer of heat dissipation areas on the driving substrate includes: simultaneously mass transferring multiple micro-light-emitting diodes and multiple heat dissipation structures to the driving substrate.

[0065] Specifically, in this embodiment, the micro LEDs and heat dissipation structures can be transferred to the driving substrate simultaneously. The transfer device can transfer all structures (micro LEDs and heat dissipation structures) in the area to be transferred at one time. If the transfer cannot be completed in one time, the transfer device only needs to adjust the path and does not need to adjust the position of the transfer head on the transfer device, thus greatly reducing the difficulty of the transfer.

[0066] Optionally, such as Figure 8 As shown, there is a gap between the heat dissipation structure 22 and the miniature light-emitting diode 21. This arrangement minimizes the impact of the heat dissipation structure 22 on the miniature light-emitting diode 21, and facilitates transfer during operation due to the gap.

[0067] Optionally, the heat dissipation structure can be a multi-layer heat sink, a honeycomb porous structure, or a multi-column structure.

[0068] Specifically, Figure 9 This is a schematic diagram of a heat dissipation structure provided in an embodiment of the present invention. Figure 9 The middle part is a multi-layer heat sink, which includes a base 221 and multiple heat sinks 222 disposed on the base 221. The heat sinks 222 can be formed on the base 221 by means of etching or other methods. Figure 10 This is a schematic diagram of another heat dissipation structure provided in an embodiment of the present invention. Figure 10 The heat dissipation structure is a multi-column structure, which includes a base 221 and multiple columns 223 disposed on the base 221. The columns 223 can be formed on the base 221 by means of etching or other methods. Figure 11 This is a schematic diagram of another heat dissipation structure provided in an embodiment of the present invention. Figure 11 The heat dissipation structure is a honeycomb porous structure, that is, multiple pore structures 225 are formed within a column 224 through etching. Multi-layer heat sinks, honeycomb porous structures, and multi-column structures all have the characteristics of simple structure and strong heat dissipation capacity, which are conducive to improving the heat dissipation capacity of the display panel and reducing the cost of the display panel.

[0069] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A method for manufacturing a display panel, characterized in that, include: A driving substrate is formed, one side of which includes multiple chip areas and multiple heat dissipation areas, each of which is disposed in the gap between the chip areas; Multiple micro light-emitting diodes are formed in the chip area on the driving substrate, and multiple heat dissipation structures are formed in the heat dissipation area on the driving substrate by mass transfer; Before forming multiple micro-light-emitting diodes in the chip region on the driving substrate, and before forming multiple heat dissipation structures by mass transfer of heat dissipation areas on the driving substrate, the method further includes: A composite temporary substrate is formed, the composite temporary substrate including a plurality of micro light-emitting diodes and a plurality of heat dissipation structures; the plurality of micro light-emitting diodes correspond to the chip area on the driving substrate, and the plurality of heat dissipation structures correspond to the heat dissipation area on the driving substrate; The formation of the composite temporary substrate includes: The first electrode of the micro light-emitting diode is formed, and the first substructure of the heat dissipation structure is formed simultaneously. The second electrode of the micro light-emitting diode is formed, and the second substructure of the heat dissipation structure is formed on the first substructure.

2. The method for manufacturing a display panel according to claim 1, characterized in that, After forming the second substructure of the heat dissipation structure on the first substructure, the following is also included: The third substructure of the heat dissipation structure is formed on the second substructure in a loop until the thickness of the heat dissipation structure reaches a second preset thickness; wherein the second preset thickness is greater than the sum of the thickness of the first electrode and the thickness of the second electrode of the micro light-emitting diode, and less than or equal to the total thickness of the micro light-emitting diode.

3. The method for manufacturing a display panel according to claim 1, characterized in that, The formation of multiple micro-light-emitting diodes in the chip region on the driving substrate, and the formation of multiple heat dissipation structures by mass transfer of heat dissipation areas on the driving substrate, include: Simultaneously, a large number of miniature light-emitting diodes and multiple heat dissipation structures are transferred to the driving substrate.

4. The method for manufacturing a display panel according to claim 1, characterized in that, There is a gap between the heat dissipation structure and the micro light-emitting diode.

5. The method for manufacturing a display panel according to claim 1, characterized in that, The heat dissipation structure is a multi-layer heat sink, a honeycomb porous structure, or a multi-column structure.

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