A millimeter wave rectifier

Abstract

The application discloses a kind of millimeter wave rectifiers, including rectifier circuit;Rectifier circuit includes input matching network, energy storage capacitor, series diode, parallel rectification network, harmonic suppression network and load;The first end of input matching network is reserved interface, and the second end of input matching network is connected with the first end of energy storage capacitor;The second end of energy storage capacitor is connected with the anode of series diode and the first end of parallel rectification network, and the second end of parallel rectification network is grounded;Harmonic suppression network is connected between the cathode of series diode and load;Input matching network and parallel rectification network are used for jointly adjusting input impedance;Harmonic suppression network is used to suppress the fundamental frequency and second harmonic generated by series diode normal work, and smooth output end waveform;Energy storage capacitor, series diode and parallel rectification network jointly constitute double voltage rectifier circuit topology structure;The millimeter wave rectifier described in the application has the characteristics of high efficiency, wideband, wide dynamic range.

Description

Technical Field

[0001] This invention belongs to the field of rectifier technology, and specifically relates to a millimeter-wave rectifier. Background Technology

[0002] Over the past few decades, many researchers have explored energy harvesting by converting different types of energy into electrical energy. In recent years, with the rapid development of the wireless industry, researchers' interest in harvesting energy from ambient electromagnetic fields has surged. Due to the growth of cellular mobile networks, WiFi-enabled applications, and television entertainment, the power density of ambient electromagnetic fields is increasing dramatically, making radio frequency (RF) power supply applications possible. At the same time, the power density of ambient electromagnetic fields remains relatively stable regardless of changes in weather and environmental conditions. Therefore, RF energy harvesting systems can operate well in most situations.

[0003] With the large-scale deployment of 5G technology, millimeter-wave base stations and mobile devices have emerged in large numbers, leading to a continuous increase in the radio frequency energy of millimeter waves in the environment. In addition to communication between devices, a large amount of millimeter-wave radio frequency energy is dissipated into the environment, resulting in a significant waste of energy. Therefore, in order to make full use of the video energy dissipated into the environment, it is necessary to study millimeter-wave rectifiers. However, due to the high frequency of the millimeter-wave band and the complexity of its design, there are many difficulties in the research of millimeter-wave rectifiers.

[0004] For example, the Chinese patent application "A Switching Transistor Rectifier for Microwave and Millimeter Wave Wireless Power Transmission Applications" (application number: CN201910267307.0) discloses that by utilizing the switching characteristics of transistors, signals of the same frequency but different phases are input to the gate and drain of the transistor to achieve rectification. Furthermore, by adjusting the phase difference between the gate and drain signals, the energy conversion efficiency of the rectifier can be improved. However, the above-mentioned rectifier can only convert energy in a single frequency band and does not optimize the energy conversion efficiency under different input powers, resulting in limited energy collection capacity, inability to cope with changing environmental radio frequency power, and difficulty in achieving large-scale collection of millimeter wave energy. Summary of the Invention

[0005] In view of the technical problems existing in the prior art, the present invention provides a millimeter-wave rectifier to solve the technical problem that the existing rectifier can only convert energy in a single frequency band and does not optimize the energy conversion efficiency under different input power, resulting in limited energy collection, inability to cope with changing environmental radio frequency power, and difficulty in achieving large-scale collection of millimeter-wave energy.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] This invention provides a millimeter-wave rectifier, including a rectifier circuit; the rectifier circuit includes an input matching network, an energy storage capacitor, a series diode, a parallel rectifier network, a harmonic suppression network, and a load;

[0008] The first end of the input matching network is a reserved interface, and the second end of the input matching network is connected to the first end of the energy storage capacitor; the second end of the energy storage capacitor is connected to the anode of the series diode and the first end of the parallel rectifier network, and the second end of the parallel rectifier network is grounded; the harmonic suppression network is connected between the cathode of the series diode and the load.

[0009] The input matching network and the parallel rectifier network are used to jointly adjust the input impedance; the harmonic suppression network is used to suppress the fundamental frequency and second harmonic generated by the normal operation of the series diode and to smooth the output waveform; the energy storage capacitor, the series diode and the parallel rectifier network together constitute a voltage doubler rectifier circuit topology.

[0010] Furthermore, the input matching network includes a first gradient microstrip line, a first rectangular microstrip line, and a first open-circuit fan-shaped microstrip line;

[0011] The first end of the first gradient microstrip line is a reserved interface. The second end of the first gradient microstrip line is connected to the first end of the first rectangular microstrip line and the first open-circuit sector microstrip line. The second end of the first rectangular microstrip line is connected to the first end of the energy storage capacitor.

[0012] Furthermore, the energy storage capacitor is a high-frequency capacitor.

[0013] Furthermore, the parallel rectifier network includes a second rectangular microstrip line, a parallel diode, and a third rectangular microstrip line;

[0014] The first end of the second rectangular microstrip line is connected to the second end of the energy storage capacitor, the second end of the second rectangular microstrip line is connected to the anode of the parallel diode, the cathode of the parallel diode is connected to the first end of the third rectangular microstrip line, and the second end of the third rectangular microstrip line is grounded; wherein, the impedance of the second rectangular microstrip line is different from the impedance of the third rectangular microstrip line.

[0015] Furthermore, the parallel diodes are Schottky diodes.

[0016] Furthermore, the harmonic suppression network includes a second tapered microstrip line, a second open-circuit sector microstrip line, a third open-circuit sector microstrip line, a third tapered microstrip line, a fourth open-circuit sector microstrip line, and a fifth open-circuit sector microstrip line.

[0017] The first end of the second tapered microstrip line is connected to the cathode of the series diode. The second end of the second tapered microstrip line is connected to the first end of the second open-circuit sector microstrip line, the third open-circuit sector microstrip line, and the third tapered microstrip line. The second end of the third tapered microstrip line is connected to the fourth open-circuit sector microstrip line, the fifth open-circuit sector microstrip line, and the load.

[0018] Furthermore, the series diode is a Schottky diode.

[0019] Furthermore, the reserved interface of the input matching network is connected in series with an AC power source and then grounded.

[0020] Furthermore, it also includes a dielectric substrate; a metal layer is disposed on one side surface of the dielectric substrate, and the rectifier circuit is disposed on the other side surface of the dielectric substrate; a plurality of metallized vias are formed on the dielectric substrate, and the ground terminal of the rectifier circuit is connected to the metal layer through the plurality of metallized vias.

[0021] Furthermore, the dielectric substrate is a Rogers 5880 dielectric substrate.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0023] This invention provides a millimeter-wave rectifier. By setting up an input matching network and a parallel rectifier network, the input impedance is adjusted by both networks, achieving impedance matching of the rectifier circuit over a wide bandwidth and a wide dynamic range of input power. This ensures maximum power transmission within the operating frequency band under different input impedances. A harmonic suppression network is used to suppress the fundamental frequency and second harmonics generated by the series diodes during normal operation and to smooth the output waveform. This allows electromagnetic energy to flow back into the entire rectifier circuit, effectively reducing energy waste at the output and significantly improving the overall RF-DC conversion efficiency of the rectifier. This also enhances the rectifier's ability to collect millimeter-wave energy. The energy storage capacitor, series diodes, and parallel rectifier network together form a voltage doubler rectifier circuit topology, which can effectively process full-wave energy signals, greatly reducing losses during rectification and further improving the rectifier's RF-DC conversion efficiency.

[0024] Furthermore, by setting a first tapered microstrip line in the input matching network, adopting the form of a tapered transmission line, it is beneficial to smooth the input impedance of the rectifier, so as to achieve impedance matching over a wider operating frequency band and a wider input power dynamic, and ensure maximum power transmission. By setting a first open-circuit sector microstrip line, adopting the form of a sector transmission line, its current path is wider and the current distribution is more diverse, thereby maintaining the circuit input impedance under a wide input power dynamic, effectively achieving impedance matching under a wide input power dynamic, and ensuring maximum power transmission under different input power.

[0025] Furthermore, the energy storage capacitor uses a high-frequency capacitor to ensure accurate capacitance value, improve the correct modeling of the impedance matching circuit, and thus effectively improve the RF-DC conversion efficiency of the rectifier.

[0026] Furthermore, in the parallel rectifier network, using two rectangular microstrip lines with different impedances to form a balanced matching network is beneficial for adjusting the impedance of the parallel diodes, so as to maintain the circuit input impedance under a wide operating frequency band and a wide input power dynamic range. This can effectively perform impedance matching under a wide operating frequency band and a wide input power dynamic range, and ensure maximum power transmission.

[0027] Furthermore, both the parallel diodes and the series diodes are Schottky diodes. Schottky diodes with a large reverse breakdown voltage have lower resistance loss and higher reverse breakdown voltage, which can effectively reduce the turn-on loss of the diodes in the rectifier circuit.

[0028] Furthermore, by employing four open-circuit sector-shaped harmonic suppression networks in the harmonic suppression network, the DC component can be effectively allowed to pass through, and the fundamental frequency and second harmonic generated by the normal operation of the diodes can be effectively filtered, greatly improving the overall RF-DC conversion efficiency of the rectifier. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the overall structure of the millimeter-wave rectifier described in the embodiment;

[0030] Figure 2 This is a schematic diagram showing the structural dimensions of each component in the millimeter-wave rectifier described in the embodiment;

[0031] Figure 3 This is a graph showing the insertion loss of the harmonic suppression network in the embodiment.

[0032] Figure 4 The graph shows the radio frequency to DC conversion efficiency of the millimeter-wave rectifier described in the embodiment before and after the addition of the harmonic suppression network.

[0033] Figure 5 This is a schematic diagram of the voltage doubler rectifier circuit topology in the embodiment;

[0034] Figure 6 The return loss curves of the millimeter-wave rectifier described in the embodiment for RF energy signals at 24GHz, 26GHz, and 28GHz are shown.

[0035] Figure 7 The return loss curve of the millimeter-wave rectifier as described in the embodiment is a graph of frequency.

[0036] Figure 8This is a schematic diagram of the metallized through-hole of the millimeter-wave rectifier described in the embodiment;

[0037] Figure 9 The graphs show the radio frequency to DC conversion efficiency of the millimeter-wave rectifier described in the embodiment at 24 GHz, 26 GHz, and 28 GHz.

[0038] Figure 10 The graph shows the change in radio frequency to DC conversion efficiency of the millimeter-wave rectifier described in the embodiment as a function of frequency.

[0039] Among them, 1 is the input matching network, 2 is the energy storage capacitor, 3 is the series diode, 4 is the parallel rectifier network, 5 is the harmonic suppression network, and 6 is the load; 11 is the first tapered microstrip line, 12 is the first rectangular microstrip line, 13 is the first open-circuit sector microstrip line; 41 is the second rectangular microstrip line, 42 is the parallel diode, 43 is the third rectangular microstrip line; 51 is the second tapered microstrip line, 52 is the second open-circuit sector microstrip line, 53 is the third open-circuit sector microstrip line, 54 is the third tapered microstrip line, 55 is the fourth open-circuit sector microstrip line, and 56 is the fifth open-circuit sector microstrip line. Detailed Implementation

[0040] To make the technical problems solved by the present invention, the technical solutions, and the beneficial effects clearer, the following specific embodiments provide a further detailed description of the present invention. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of the invention.

[0041] Example 1

[0042] This embodiment provides a millimeter-wave rectifier, including a rectifier circuit and a dielectric substrate. A metal layer is disposed on one side surface of the dielectric substrate, and the rectifier circuit is disposed on the other side surface of the dielectric substrate. The dielectric substrate has a plurality of metallized vias, and the ground terminal of the rectifier circuit is connected to the metal layer through the plurality of metallized vias.

[0043] As attached Figure 1 As shown, the rectifier circuit includes an input matching network 1, an energy storage capacitor 2, a series diode 3, a parallel rectifier network 4, a harmonic suppression network 5, and a load 6. The first end of the input matching network 1 is a reserved interface, which is connected in series with an AC power source and then grounded. The second end of the input matching network 1 is connected to the first end of the energy storage capacitor 2, and the second end of the energy storage capacitor 2 is connected to both the anode of the series diode 3 and the first end of the parallel rectifier network 4. The harmonic suppression network 5 is connected between the cathode of the series diode 3 and the load 6. Specifically, the input end of the harmonic suppression network 5 is connected to the cathode of the series diode 3, and the output end of the harmonic suppression network 5 is connected to the first end of the load 6. The second ends of the parallel rectifier network 4 and the second ends of the load 6 are both grounded.

[0044] In this embodiment 1, the input matching network 1 includes a first tapered microstrip line 11, a first rectangular microstrip line 12, and a second open-circuit sector microstrip line 13. The first end of the first tapered microstrip line 11 is a reserved interface, which is grounded after being connected in series with an AC power source. The second end of the first tapered microstrip line 11 is connected to the first end of the first rectangular microstrip line 12 and the first open-circuit sector microstrip line 13. Specifically, the second end of the first tapered microstrip line 11 is first connected in parallel with the first open-circuit sector microstrip line 13, and then connected in series with the first end of the first rectangular microstrip line 12. The second end of the first rectangular microstrip line 12 is connected to the first end of the energy storage capacitor 2.

[0045] The first tapered microstrip line 11 adopts the form of a tapered transmission line, which is beneficial to smoothing the input impedance of the rectifier compared with the traditional rectangular transmission line. This enables impedance matching in a wider operating frequency band and under a wider input power dynamic range, and ensures maximum power transmission.

[0046] The first open-circuit sector microstrip line 13 adopts the form of a sector transmission line, which has a wider current path and more diverse current distribution compared with the traditional open-circuit rectangular transmission line. At the same time, it can maintain the circuit input impedance under a wider operating frequency band and a wider input power dynamic, and can effectively perform impedance matching under a wider operating frequency band and a wider input power dynamic, and ensure maximum power transmission.

[0047] In this embodiment, the energy storage capacitor 2 is a high-frequency capacitor to ensure accurate capacitance value, improve the correct modeling of impedance matching circuit, and thus improve the RF-DC conversion efficiency of rectifier; preferably, the energy storage capacitor 2 is a high-frequency capacitor suitable for millimeter waves.

[0048] In this embodiment, the parallel rectifier network 4 includes a second rectangular microstrip line 41, a parallel diode 42, and a third rectangular microstrip line 43. The first end of the second rectangular microstrip line 41 is connected to the second end of the energy storage capacitor 2, the second end of the second rectangular microstrip line 41 is connected to the anode of the parallel diode 42, the cathode of the parallel diode 42 is connected to the first end of the third rectangular microstrip line 43, and the second end of the third rectangular microstrip line 43 is grounded. The impedance of the second rectangular microstrip line 41 is different from that of the third rectangular microstrip line 43. In the parallel rectifier network 4, the use of the second rectangular microstrip line 41 and the third rectangular microstrip line 43 with different impedances to form a balanced matching network is beneficial for adjusting the impedance of the parallel diode 42, so as to maintain the circuit input impedance under wide input power dynamics, effectively perform impedance matching under wide input power dynamics, and ensure maximum power transmission under different input power.

[0049] In this embodiment, both the series diode 3 and the parallel diode 42 are Schottky diodes; preferably, the Schottky diode is model MA4E1317; using a Schottky diode with a large reverse breakdown voltage can effectively reduce the turn-on loss of the diode in the rectifier circuit.

[0050] It should be noted that the input matching network 1 and the parallel rectifier network 4 are used to jointly adjust the input impedance. Specifically, by jointly adjusting the input impedance through the input matching network 1 and the parallel rectifier network 4, impedance matching of the rectifier circuit under wide bandwidth and wide input power dynamic range is achieved, thereby ensuring maximum power transmission under different input impedances within the operating frequency band. The energy storage capacitor 2, the series diode 3, and the parallel rectifier network 4 together constitute a voltage doubler rectifier circuit topology. By adopting a voltage doubler rectifier circuit topology, full-wave energy signals can be effectively processed, losses are greatly reduced during rectification, and the RF-DC conversion efficiency of the rectifier is further improved.

[0051] In this embodiment, the harmonic suppression network 5 can be used to suppress the fundamental frequency and second harmonic generated by the normal operation of the series diode 3 and smooth the output waveform. The harmonic suppression network 5 includes a second tapered microstrip line 51, a second open-circuit sector microstrip line 52, a third open-circuit sector microstrip line 53, a third tapered microstrip line 54, a fourth open-circuit sector microstrip line 55, and a fifth open-circuit sector microstrip line 56. The first end of the second tapered microstrip line 51 is connected to the cathode of the series diode 3, and the second end of the second tapered microstrip line 51 is connected to the first ends of the second open-circuit sector microstrip line 52, the third open-circuit sector microstrip line 53, and the third tapered microstrip line 54. The second end of the third tapered microstrip line 53 is connected to the first end of the fourth open-circuit sector microstrip line 55, the fifth open-circuit sector microstrip line 56, and the load 6.

[0052] The second open-circuit sector microstrip line 52 and the third open-circuit sector microstrip line 53 have the same structural dimensions, and the fourth open-circuit sector microstrip line 55 and the fifth open-circuit sector microstrip line 56 have the same structural dimensions. However, the structural dimensions of the second open-circuit sector microstrip line 52 or the third open-circuit sector microstrip line 53 are different from the structural dimensions of the fourth open-circuit sector microstrip line 55 or the fifth open-circuit sector microstrip line 56.

[0053] It should be noted that the harmonic suppression network 5, by employing four open-circuit sector-shaped harmonic suppression networks, can effectively allow the DC component to pass through, thereby effectively suppressing the fundamental frequency and second harmonic generated by the normal operation of the diode, enabling energy to flow back to the rectifier circuit, effectively reducing energy waste at the output end, greatly improving the overall RF-DC conversion efficiency of the rectifier, and effectively enhancing the rectifier's ability to collect millimeter-wave energy.

[0054] In this embodiment, the dielectric substrate is a Rogers 5880 dielectric substrate. Using a Rogers 5880 dielectric substrate can effectively reduce high-frequency losses, thereby improving the RF-DC conversion efficiency of the high-efficiency, wide-bandwidth dynamic range millimeter-wave rectifier. The ground terminal of the rectifier circuit is the terminal that each component in the rectifier circuit needs to be grounded. Specifically, it includes the second terminal of the third rectangular microstrip 43 and the second terminal of the load 6. It should be noted that a gasket is provided on the side of each metallized via near the rectifier circuit. The gasket is connected to the surface of the dielectric substrate. The gasket can stabilize the connection between the ground terminal of the rectifier circuit and the metallized via, and can also keep the input impedance performance of the rectifier circuit stable within the operating frequency band, thereby improving the stability of the rectifier.

[0055] Working principle:

[0056] The millimeter-wave rectifier described in this embodiment, when in use, when millimeter-wave radio frequency energy enters the rectifier, first passes through an input matching network using a tapered transmission line and an open-circuit fan-shaped microstrip line. This facilitates maximum power transmission for wide-bandwidth signals, i.e., 23-29 GHz millimeter-wave radio frequency energy signals, maintaining high conversion efficiency while achieving wide-bandwidth rectification. Secondly, the energy signal passes through a voltage doubler rectifier circuit composed of an energy storage capacitor, a series diode, and a parallel rectifier network. Unlike traditional half-wave rectifier structures, the voltage doubler rectifier circuit can effectively handle both the positive and negative half-cycles of the radio frequency energy signal, significantly reducing losses during rectification and further improving the rectifier's radio frequency-to-DC conversion efficiency. Simultaneously, for the parallel rectifier network, different impedances are used... The two rectangular microstrip lines form a balanced matching network, which is beneficial for adjusting the impedance of the parallel diodes to maintain the circuit input impedance under wide input power dynamics. This effectively matches the impedance under wide input power dynamics and ensures maximum power transfer under different input power levels. This allows the rectifier to effectively cope with changing ambient RF power, ultimately achieving a large amount of millimeter-wave energy collection. Finally, since diodes are nonlinear devices, they generate a large amount of unrectified fundamental and second harmonic signals during normal operation. The harmonic suppression network suppresses these energy signals, thereby returning the electromagnetic energy to the entire rectifier circuit, effectively reducing energy waste at the output end, greatly improving the overall RF-DC conversion efficiency of the rectifier, and effectively enhancing the rectifier's ability to collect millimeter-wave energy.

[0057] The specific structural dimensions of the millimeter-wave rectifier are described below, using the 23GHz-29GHz frequency band as a specific reference:

[0058] As attached Figure 2As shown, the specific parameters of each component in the rectifier circuit are as follows: the line length L1 of the first tapered microstrip line is 4.5 mm; the line length L2 of the first rectangular microstrip line is 2.9 mm; the chord length L3 of the first open-circuit sector microstrip line is 3.9 mm; the line length L4 of the energy storage capacitor pad is 0.8 mm; the line length L5 of the microstrip line connecting the energy storage capacitor and the series diode is 3 mm; the line length L6 of the second rectangular microstrip line is 2.1 mm; the line length L7 of the third rectangular microstrip line is 3.3 mm; and the line length L8 of the second tapered microstrip line is 3 mm. The lengths of the third and fourth open-circuit sector microstrip lines are as follows: L9 = 4.2 mm; L10 = 2.6 mm; L11 = 7.8 mm; L12 = 3 mm; L13 = 0.8 mm; L14 = 3 mm; L1 = 0.78 mm; L1 = 0.78 mm; L2 = 1 mm; L1 = 1 mm; L2 = 1 mm; L1 = 0.78 mm; L1 = 0.8 mm; L1 = 0.8 mm; L1 = 3 mm; L1 = 0.8 ... The linewidths are as follows: W3 = 2mm; W4 = 0.9mm; W5 = 0.78mm; W6 = 0.3mm; W7 = 1.4mm; W8 = 0.4mm; W9 = 1.8mm; W10 = 3.1mm; W11 = 2mm; W2 = 2mm; W3 = 2mm; W4 = 0.9mm; W5 = 0.78mm; W6 = 0.3mm; W7 = 1.4mm; W8 = 0.4mm; W9 = 1.8mm; W10 = 3.1mm; W11 = 2mm; W1 ...13 = 2mm; W14 = 2mm; W15 = 2mm; W16 = 2mm; W17 = 2mm; W8 = 2mm; W9 = 2mm; W18 = 2mm; W9 = 2mm; W19 = 2mm; W10 = 2mm; W11 = 2mm; W12 = 2mm; W13 = 2mm; W14 = 2mm; W15 = 2mm; W16 = 2mm; W17 = 2mm; W18 = 2mm; W19 = 2mm; W10 = 2mm; W11 = 2mm; W12 = 2mm; W13 = 2mm; W14 = 2mm; W15 = 2mm; W16 = 2mm; W17 = 2mm; W18 = 2mm; W19 = 2mm; W10 W12 = 0.78 mm; W13 = 1.4 mm; W14 = 2.6 mm; W15 = 0.78 mm; W16 = 0.78 mm; W17 = 0.78 mm; W18 = 0.78 mm; W19 = 0.78 mm; W10 = 0.78 mm; W11 = 0.78 mm; W12 = 0.78 mm; W13 = 0.78 mm; W14 = 0.78 mm; W15 = 0.78 mm; W16 = 0.78 mm; W17 = 0.78 mm; W18 = 0.78 mm; W19 ...

[0059] The design process of the millimeter-wave rectifier is as follows:

[0060] First, with the design requirement of acquiring millimeter-wave radio frequency energy signals in the 23GHz-29GHz range, when designing the structural size of the harmonic suppression network, it is necessary to minimize the insertion loss of the harmonic suppression network in the 23GHz-29GHz and 46GHz-58GHz range signals.

[0061] Specifically, the first end linewidth of the second gradient microstrip line is 0.78 mm, the second end linewidth is 0.4 mm, and the line length is 3 mm; the first end linewidth of the third gradient microstrip line is 0.4 mm, the second end linewidth is 3.1 mm, and the line length is 2.6 mm; the linewidth of the second open-circuit sector microstrip line is 1.8 mm, the chord length is 4.2 mm, and the opening angle is... The third open-circuit sector microstrip line has a linewidth of 1.8 mm, a chord length of 4.2 mm, and an angle of 90°. The fourth open-circuit sector microstrip line has a linewidth of 2.6 mm, a chord length of 7.8 mm, and an angle of 90°. The fifth open-circuit sector microstrip line has a linewidth of 2.6 mm, a chord length of 7.8 mm, and an angle of 90°.

[0062] As attached Figure 3 As shown, attached Figure 3 The insertion loss curve of the harmonic suppression network in the embodiment is given in the figure; from the appendix Figure 3 As can be seen, the harmonic suppression network can effectively suppress signals with frequencies of 23GHz-29GHz and 46GHz-58GHz, with an insertion loss of less than -30dB within its frequency band.

[0063] As attached Figure 4 As shown, attached Figure 4 The appendix provides RF-DC conversion efficiency curves for the millimeter-wave rectifier described in the embodiment before and after the addition of the harmonic suppression network; specifically, it provides RF-DC conversion efficiency curves for a high-efficiency, wide-bandwidth dynamic range millimeter-wave rectifier before and after adding the harmonic suppression network at an RF input power of 16 dBm; from the appendix... Figure 4 As can be seen, before adding the harmonic suppression network, the RF-DC conversion efficiency of the high-efficiency wide-bandwidth dynamic range millimeter-wave rectifier in its operating frequency band of 23GHz-29GHz is less than 50%; after adding the harmonic suppression network, the RF-DC conversion efficiency of the high-efficiency wide-bandwidth dynamic range millimeter-wave rectifier in its operating frequency band of 23GHz-29GHz is greater than 60%. It is evident that within its operating frequency band, adding the harmonic suppression network can improve the RF-DC conversion efficiency of the high-efficiency wide-bandwidth dynamic range millimeter-wave rectifier by more than 10%.

[0064] Secondly, in this embodiment, the topology of the rectifier circuit and the diode type are selected according to the required frequency band and power range; assuming the operating frequency band is 23GHz-29GHz and the input power is approximately 16dBm; the voltage doubler rectifier circuit topology is a full-wave rectifier circuit; as shown in the attached... Figure 5As shown, attached Figure 5 The diagram above shows the schematic of a voltage doubler rectifier circuit topology; see the attached diagram. Figure 5 As can be seen, it has high RF-DC conversion efficiency and high operating frequency at an input power of 16dBm. Therefore, the energy storage capacitor 2, the series diode 3, and the parallel rectifier network 4 together constitute a voltage doubler rectifier circuit topology. The rectifier circuit operates at a high frequency, so the series diode 3 and the parallel diode 42 are selected from MACOM MA4E1317 Schottky diodes, which have extremely low resistance loss and high reverse breakdown voltage, maximizing the RF-DC conversion efficiency. The energy storage capacitor 2 is a Murata lumped-system device with a capacitance value of c9 = 100nF and a model number of 935121425610-xxN.

[0065] Next, based on existing theoretical analysis and testing, the maximum RF-DC conversion efficiency of the MA4E1317 Schottky diode was obtained under an input power of 16dBm. Then, after obtaining the circuit impedance in the 23GHz-29GHz frequency band under an input power of -15dBm to 20dBm, the dimensions of the second rectangular microstrip line 41 and the third rectangular microstrip line 43 in the parallel rectifier network input matching network 1 and the parallel rectifier network 4 were designed according to the back-end impedance.

[0066] Specifically, the second rectangular microstrip line 41 has a linewidth of 0.3 mm and a line length of 2.1 mm; the third rectangular microstrip line 43 has a linewidth of 1.4 mm and a line length of 3.3 mm, its function being to convert the drastically changing impedance under different input power and operating frequency into a gradually changing impedance; the first end of the first tapered microstrip line 11 has a linewidth of 0.78 mm, and the second end of the first tapered microstrip line 11 has a linewidth of... The first tapered microstrip line 11 has a line width of 2mm and a line length of 4.5mm; the first rectangular microstrip line 12 has a line width of 2mm and a line length of 2.9mm; the first open-circuit sector microstrip line 13 has a line width of 1mm, a chord length of 3.9mm, and a slant angle of 90°. Its function is to match the impedance that changes gradually at different frequencies and different input powers to 50Ω.

[0067] As attached Figure 6 As shown, attached Figure 6 The attached figure shows the return loss curves of the millimeter-wave rectifier described in the embodiment for RF energy signals at 24GHz, 26GHz, and 28GHz; from the attached figure... Figure 6As can be seen, for a 24GHz signal, with an input power of -15dBm to 20dBm, its return loss is less than -10dB, and the lowest point of return loss occurs at 15dBm, with a value of -35dB. Similarly, for a 26GHz signal, its input power dynamic range is also -15dBm to 20dBm at -10dB, and the lowest point of return loss occurs at -11dBm, with a value of -23dB. For a 28GHz signal, its input power dynamic range is -15dBm to 20dBm, and the lowest point of return loss occurs at 17dBm, with a value of -18dB.

[0068] As attached Figure 7 As shown, attached Figure 7 The figure shows the return loss curve of the millimeter-wave rectifier as a function of frequency; from the appendix... Figure 7 As can be seen, for millimeter-wave energy signals in the 23GHz-29GHz range, the return loss is less than -10dB, with the lowest return loss occurring at 23.75GHz at -33.9dB. These results strongly demonstrate that the high-efficiency, wide-bandwidth dynamic range millimeter-wave rectifier described above can achieve impedance matching over a wide bandwidth and a wide input power dynamic range.

[0069] Next, regarding the design of metallized through-holes and gaskets, as shown in the attached... Figure 8 As shown, the radius r of the metallized through hole is 0.2 mm; the width w of the gasket is 0.4 mm, and the length l of the gasket is 0.8 mm; wherein, the material of the gasket is copper.

[0070] Finally, the millimeter-wave rectifier was placed in the high-frequency circuit simulation software Advanced Design System for harmonic balance simulation; as shown in the attached... Figure 9 As shown, attached Figure 9 The figure shows the RF-DC conversion efficiency curves of the millimeter-wave rectifier at 24 GHz, 26 GHz, and 28 GHz; see the attached figure. Figure 9 As can be seen, for 24 GHz, the highest RF-DC conversion efficiency is approximately 67.5% at an input power of 16 dBm, while for a lower input power of 0 dBm, the RF-DC conversion efficiency is 30.2%; for 26 GHz, the highest RF-DC conversion efficiency is approximately 71.3% at an input power of 20 dBm, while for a lower input power of 0 dBm, the RF-DC conversion efficiency is 27.3%; for 28 GHz, the highest RF-DC conversion efficiency is approximately 74.8% at an input power of 18 dBm, while for a lower input power of 0 dBm, the RF-DC conversion efficiency is 30.8%.

[0071] As attached Figure 10 As shown, attached Figure 10 The figure shows the RF-DC conversion efficiency of the millimeter-wave rectifier as a function of frequency; from the appendix... Figure 10 As can be seen, the millimeter-wave rectifier achieves a conversion efficiency of over 60% within a bandwidth of 23-29 GHz.

[0072] Therefore, the above results fully demonstrate that the millimeter-wave rectifier has the characteristics of high efficiency, wide bandwidth, and wide dynamic range. The millimeter-wave rectifier adopts the form of microstrip transmission stubs. Compared with traditional lumped matching circuits, microstrip transmission stubs have the advantage of small parasitic effects, which can effectively reduce high-frequency losses. At the same time, it has the advantages of easy processing and manufacturing and low cost.

[0073] The millimeter-wave rectifier described in this invention, by using an input matching network composed of a tapered transmission line and fan-shaped open-circuit stubs, can effectively match the impedance of the downstream rectifier network circuit to 50Ω over a wide bandwidth. Adding two microstrip lines with different impedances across the diodes in the parallel rectifier network keeps the diode impedance relatively stable, ensuring good impedance matching of the input matching network under different input impedances. This significantly expands the input power range of the millimeter-wave rectifier, achieving a wide dynamic range characteristic. It can adapt to changes in input power while ensuring maximum power transmission and achieving high energy conversion efficiency, effectively improving the rectifier's ability to collect millimeter-wave energy. Using two tapered transmission lines and two pairs of fan-shaped open-circuit stubs of different sizes achieves wideband harmonic suppression. By reflecting and re-rectifying the harmonics generated by the diodes within the operating frequency band at the output, the energy conversion efficiency of the rectifier is greatly improved.

[0074] The above embodiments are merely one of the implementation methods for achieving the technical solution of the present invention. The scope of protection claimed by the present invention is not limited to this embodiment, but also includes any variations, substitutions and other implementation methods that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention.

Claims

1. A millimeter-wave rectifier, characterized in that, It includes a rectifier circuit; the rectifier circuit includes an input matching network (1), an energy storage capacitor (2), a series diode (3), a parallel rectifier network (4), a harmonic suppression network (5), and a load (6); The first end of the input matching network (1) is a reserved interface, and the second end of the input matching network (1) is connected to the first end of the energy storage capacitor (2); the second end of the energy storage capacitor (2) is connected to the anode of the series diode (3) and the first end of the parallel rectifier network (4), and the second end of the parallel rectifier network (4) is grounded; the harmonic suppression network (5) is connected between the cathode of the series diode (3) and the load (6); The input matching network (1) and the parallel rectifier network (4) are used to jointly adjust the input impedance; the harmonic suppression network (5) is used to suppress the fundamental frequency and second harmonic generated by the normal operation of the series diode (3) and smooth the output waveform; the energy storage capacitor (2), the series diode (3) and the parallel rectifier network (4) together constitute a voltage doubler rectifier circuit topology. The input matching network (1) includes a first gradient microstrip line (11), a first rectangular microstrip line (12), and a first open-circuit fan-shaped microstrip line (13). The first end of the first gradient microstrip line (11) is a reserved interface. The second end of the first gradient microstrip line (11) is connected to the first end of the first rectangular microstrip line (12) and the first open-circuit sector microstrip line (13). The second end of the first rectangular microstrip line (12) is connected to the first end of the energy storage capacitor (2). The parallel rectifier network (4) includes a second rectangular microstrip line (41), a parallel diode (42), and a third rectangular microstrip line (43). The first end of the second rectangular microstrip line (41) is connected to the second end of the energy storage capacitor (2), the second end of the second rectangular microstrip line (41) is connected to the anode of the parallel diode (42), the cathode of the parallel diode (42) is connected to the first end of the third rectangular microstrip line (43), and the second end of the third rectangular microstrip line (43) is grounded; wherein, the impedance of the second rectangular microstrip line (41) is different from the impedance of the third rectangular microstrip line (43); The harmonic suppression network (5) includes a second tapered microstrip line (51), a second open-circuit sector microstrip line (52), a third open-circuit sector microstrip line (53), a third tapered microstrip line (54), a fourth open-circuit sector microstrip line (55), and a fifth open-circuit sector microstrip line (56). The first end of the second gradient microstrip line (51) is connected to the cathode of the series diode (3), and the second end of the second gradient microstrip line (51) is connected to the first end of the second open-circuit sector microstrip line (52), the third open-circuit sector microstrip line (53) and the third gradient microstrip line (54); the second end of the third gradient microstrip line (54) is connected to the fourth open-circuit sector microstrip line (55), the fifth open-circuit sector microstrip line (56) and the load (6).

2. The millimeter-wave rectifier according to claim 1, characterized in that, The energy storage capacitor (2) is a high-frequency capacitor.

3. A millimeter-wave rectifier according to claim 1, characterized in that, The parallel diode (42) is a Schottky diode.

4. A millimeter-wave rectifier according to claim 1, characterized in that, The series diode (3) is a Schottky diode.

5. A millimeter-wave rectifier according to claim 1, characterized in that, The reserved interface of the input matching network (1) is connected in series with an AC source and then grounded.

6. A millimeter-wave rectifier according to claim 1, characterized in that, It also includes a dielectric substrate; a metal layer is disposed on one side surface of the dielectric substrate, and the rectifier circuit is disposed on the other side surface of the dielectric substrate; a plurality of metallized vias are formed on the dielectric substrate, and the ground terminal of the rectifier circuit is connected to the metal layer through the plurality of metallized vias.

7. A millimeter-wave rectifier according to claim 6, characterized in that, The dielectric substrate used is the Rogers 5880 dielectric substrate.

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