A manufacturing method of an OLED display device and a manufacturing apparatus

Abstract

The application discloses a manufacturing method and manufacturing equipment of an OLED display device, and the method comprises the following steps: fully evaporating a first light-emitting layer on a silicon substrate; irradiating the light-emitting layer on the silicon substrate by using a laser device to gasify part of the first light-emitting layer, so that a first light-emitting material area with a preset thickness is formed at a position corresponding to a first preset pixel on the silicon substrate; sequentially evaporating a light protection material and a second light-emitting layer on the silicon substrate; and irradiating the light-emitting layer on the silicon substrate by using the laser device to gasify part of the second light-emitting layer and part of the light protection material, so that a second light-emitting material area with a preset thickness is formed at a position corresponding to a second preset pixel on the silicon substrate. The method is used to overcome the fact that the existing technology mainly uses white light + CF (color film) to realize colorization of a silicon-based OLED, and the display product with the structure has the problems of low brightness and low color gamut.

Description

Technical Field

[0001] This invention relates to the field of Micro OLED display device manufacturing technology, and more specifically, to a method and equipment for manufacturing an OLED display device. Background Technology

[0002] Silicon-based OLED (Organic Light Emitting Display) is hailed as a dark horse in next-generation display technology. Unlike conventional AMOLED devices that use amorphous silicon, microcrystalline silicon, or low-temperature polycrystalline silicon thin-film transistors as the backplane, it is an active-matrix organic light-emitting diode display device made with monocrystalline silicon as the active driving backplane. Its pixel size is 1 / 10 that of traditional display devices, resulting in significantly higher resolution and numerous advantages such as high resolution, high integration, low power consumption, small size, and light weight.

[0003] Currently, high resolution is mainly achieved through silicon-based OLEDs. The main way to achieve color in silicon-based OLEDs is through white light + color filter (CF). However, display products with this structure have problems such as low brightness and limited color gamut.

[0004] Therefore, the present invention urgently needs to solve the problem of providing a method and equipment for manufacturing OLED display devices that uses a combination of surface laser, mask, and vapor deposition technology in the manufacturing process to achieve Real RGB full-color display, and which greatly improves brightness and color gamut, while having low process difficulty and low precision requirements for laser equipment. Summary of the Invention

[0005] To address the aforementioned technical problems, the purpose of this invention is to overcome the limitations of existing silicon-based OLEDs, which primarily achieve colorization using white light + color filter (CF). However, display products with this structure suffer from low brightness and limited color gamut. This invention provides a method and equipment for manufacturing OLED display devices that utilizes a combination of surface laser, photomask, and vapor deposition during the manufacturing process to achieve Real RGB full-color display. This significantly improves brightness and color gamut while minimizing process complexity and requiring lower precision from laser equipment.

[0006] To achieve the above objectives, the present invention provides a method for manufacturing an OLED display device, the method comprising:

[0007] The first light-emitting layer is deposited entirely on the silicon substrate by vapor deposition.

[0008] A laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the first light-emitting layer, thereby forming a first light-emitting material area of ​​a preset thickness only at the position corresponding to the first preset pixel on the silicon substrate.

[0009] Photoprotective material and second light-emitting layer are sequentially deposited onto the silicon substrate.

[0010] A laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the second light-emitting layer and part of the photoprotective material, thereby forming a second light-emitting material area of ​​a preset thickness only at the position corresponding to the second preset pixel on the silicon substrate.

[0011] Photoprotective material and third light-emitting layer are sequentially deposited onto the silicon substrate.

[0012] A surface laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the photoprotective material and the third light-emitting layer, thereby forming a third light-emitting material region of a predetermined thickness only at the position corresponding to the third predetermined pixel on the silicon substrate.

[0013] Preferably, the first light-emitting layer is an R (red) light-emitting layer, the first light-emitting material region is an R (red) light-emitting material region, and the first preset pixel is an R (red) pixel;

[0014] The second light-emitting layer is a G (green) light-emitting layer, the second light-emitting material area is a G (green) light-emitting material area, and the second preset pixel is a G (green) pixel;

[0015] The third light-emitting layer is a B (blue) light-emitting layer, the third light-emitting material area is a B (blue) light-emitting material area, and the third preset pixel is a B (blue) pixel.

[0016] Preferably, the light-protecting material is a green light-emitting material.

[0017] Preferably, after irradiating the light-emitting layer on the silicon substrate with a surface laser device to vaporize part of the photoprotective material and the third light-emitting layer, thereby forming a third light-emitting material region of a predetermined thickness only at the position corresponding to the third predetermined pixel on the silicon substrate, the method further includes:

[0018] An electron transport common layer is deposited on the first luminescent material region, the second luminescent material region, and the third luminescent material region.

[0019] Preferably, before depositing the first light-emitting layer on the silicon substrate, the method further includes performing ITO compensation processing at the silicon substrate positions corresponding to the second preset pixel and the third preset pixel, respectively.

[0020] Preferably, before irradiating the light-emitting layer on the silicon substrate with a laser device, a corresponding mask is assembled on the silicon substrate, and the mask has an opening area that matches the area where the light-emitting layer is to be vaporized.

[0021] The present invention also provides a manufacturing apparatus for an OLED display device, the manufacturing apparatus comprising:

[0022] The first mask, which is mounted on a silicon substrate, can only block the position corresponding to the R pixel on the silicon substrate;

[0023] The second mask, which is mounted on the silicon substrate, can only block the position corresponding to the G pixel on the silicon substrate;

[0024] A third mask, wherein the second mask is mounted on a silicon substrate and can only block the corresponding position of the B-pixel on the silicon substrate; and

[0025] Laser devices are used to irradiate and vaporize parts of the R (red) emitting layer, G (green) emitting layer, B (blue) emitting layer, and photoprotective material.

[0026] Preferably, the device further includes:

[0027] The vapor deposition unit is used to deposit R (red) light-emitting layer, G (green) light-emitting layer, B (blue) light-emitting layer, photoprotective material and common layer on silicon substrate.

[0028] Preferably, the laser device is a surface laser, used to project surface laser light onto a silicon substrate, and the area of ​​the surface laser region is larger than the area of ​​the silicon substrate.

[0029] Preferably, the laser device is a scanning laser device, and it is used to scan the entire upper surface of the silicon substrate.

[0030] According to the above technical solution, the beneficial effects of the OLED display device manufacturing method and equipment provided by the present invention in use are as follows: Laser technology is used to process the light-emitting layer, thereby depositing corresponding light-emitting layers at the positions of the first, second, and third preset pixels on the silicon substrate, thus achieving Real RGB full-color display. Compared with the white light + CF (color filter) structure, the brightness and color gamut of the display device are greatly improved due to the absence of the CF film, achieving a high brightness and high resolution effect. Furthermore, a photoprotective material is deposited above each light-emitting layer, ensuring thorough vaporization during laser vaporization of the light-emitting layer. The use of photoprotective material reduces the difficulty of the process and lowers the precision requirements of the laser, facilitating production and improving yield.

[0031] Other features and advantages of the present invention will be described in detail in the following detailed description section; and all parts not covered in the present invention are the same as or can be implemented using the prior art. Attached Figure Description

[0032] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings:

[0033] Figure 1 This is a process flow of a high-brightness, high-resolution OLED display device fabrication method provided in a preferred embodiment of the present invention. Figure 1 ;

[0034] Figure 2 This is a process flow of a high-brightness, high-resolution OLED display device fabrication method provided in a preferred embodiment of the present invention. Figure 2 ;

[0035] Figure 3 This is a schematic diagram of the structure of a manufacturing apparatus for a high-brightness, high-resolution OLED display device provided in a preferred embodiment of the present invention. Figure 1 ;

[0036] Figure 4 This is a schematic diagram of a structure in which an R (red) light-emitting material region is formed on a silicon substrate, according to a preferred embodiment of the present invention.

[0037] Figure 5 This is a schematic diagram of the structure of a manufacturing apparatus for a high-brightness, high-resolution OLED display device provided in a preferred embodiment of the present invention. Figure 2 ;

[0038] Figure 6 This is a schematic diagram of a structure in which a G (green) light-emitting material region is formed on a silicon substrate, according to a preferred embodiment of the present invention.

[0039] Figure 7 This is a schematic diagram of the structure of a manufacturing apparatus for a high-brightness, high-resolution OLED display device provided in a preferred embodiment of the present invention. Figure 3 ;

[0040] Figure 8 This is a schematic diagram of a structure in which a B (blue) light-emitting material region is formed on a silicon substrate, according to a preferred embodiment of the present invention.

[0041] Explanation of reference numerals in the attached figures

[0042] 1. First mask 2. Second mask

[0043] 3. Third mask plate; 4. Laser device

[0044] 5 silicon substrates Detailed Implementation

[0045] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0046] like Figure 1 As shown, the present invention provides a method for manufacturing a high-brightness, high-resolution OLED display device, the method comprising:

[0047] Step S101: The first light-emitting layer is deposited all over the silicon substrate by vapor deposition;

[0048] Step S102: Use a laser device to irradiate the light-emitting layer on the silicon substrate to vaporize part of the first light-emitting layer, thereby forming a first light-emitting material area of ​​a preset thickness only at the position corresponding to the first preset pixel on the silicon substrate.

[0049] Step S103: Photoprotective material and second light-emitting layer are sequentially deposited on the silicon substrate.

[0050] Step S104: Use a laser device to irradiate the light-emitting layer on the silicon substrate to vaporize part of the second light-emitting layer and part of the photoprotective material, thereby forming a second light-emitting material area of ​​a preset thickness only at the second preset pixel position on the silicon substrate.

[0051] Step S105: Photoprotective material and third light-emitting layer are sequentially deposited on the silicon substrate.

[0052] In step S106, a surface laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the photoprotective material and the third light-emitting layer, thereby forming a third light-emitting material region of a preset thickness only at the third preset pixel position on the silicon substrate.

[0053] Preferably, the first light-emitting layer is an R (red) light-emitting layer, the first light-emitting material region is an R (red) light-emitting material region, and the first preset pixel is an R (red) pixel;

[0054] The second light-emitting layer is a G (green) light-emitting layer, the second light-emitting material area is a G (green) light-emitting material area, and the second preset pixel is a G (green) pixel;

[0055] The third light-emitting layer is a B (blue) light-emitting layer, the third light-emitting material area is a B (blue) light-emitting material area, and the third preset pixel is a B (blue) pixel.

[0056] In the above scheme, the method first involves depositing an R (red) light-emitting layer on a silicon substrate, such as... Figure 3As shown, a laser is then used in conjunction with a corresponding mask to irradiate the R-emitting layer. The portion of the R-emitting layer not blocked by the mask is rapidly vaporized by the laser energy, leaving only a portion of the R-emitting layer, as shown. Figure 4 As shown, an R (red) luminescent material region of a predetermined thickness is formed only at the corresponding position of the R pixel on the silicon substrate; as Figure 5 As shown, a photoprotective material and a G (green) emitting layer are then sequentially deposited onto the silicon substrate. This sequential deposition refers to first depositing a layer of photoprotective material, then depositing a G (green) emitting layer on top of the photoprotective material. A laser, along with a corresponding mask, is then used to irradiate the G emitting layer. The photoprotective material increases the thickness of the emitting layer, allowing for deeper laser vaporization. As long as the remaining photoprotective material is preserved, the R emitting layer will not be damaged, and the G (green) emitting layer on the R emitting layer can be completely removed. This method reduces the manufacturing process difficulty and lowers the precision requirements of the laser. The reason for not simply increasing the thickness of the R emitting layer to achieve the above effect is that the R emitting layer is conductive. If the thickness is too large during production, it can easily cause excessive voltage at that location, leading to display problems.

[0057] The processing method and principle for the subsequent G-emitting layer are the same. At this point, the entire G-emitting layer on the R (red) emitting material region will be vaporized by laser, such as... Figure 6 As shown, a G (green) luminescent material region of a predetermined thickness is formed only at the corresponding position of the G pixel on the silicon substrate; similarly, as... Figure 7 As shown, a photoprotective material and a blue (B) emitting layer are sequentially deposited onto a silicon substrate. Then, a laser is used in conjunction with a corresponding photomask to irradiate the B emitting layer. Figure 8 As shown, a B (blue) luminescent material region of a predetermined thickness is formed only at the position corresponding to the B pixel on the silicon substrate.

[0058] The OLED display device fabricated by the above method can form R (red) light-emitting material region, G (green) light-emitting material region, and B (blue) light-emitting material region on the silicon substrate. Compared with the existing technology of achieving colorization by white light + CF (color filter), the OLED fabricated by the method provided in this application can greatly improve the brightness and color gamut, thereby achieving a high brightness and high resolution effect. Moreover, a photoprotective material is deposited on top of each light-emitting layer, so that the laser vaporization elimination of the light-emitting layer can be guaranteed to be thorough. The use of photoprotective material can reduce the difficulty of the process and the precision requirements of the laser will also be reduced accordingly, which will facilitate production and improve the yield.

[0059] In a preferred embodiment of the present invention, the photoprotective material is a green light-emitting substrate material. It should be noted that OLED light-emitting materials can be classified into substrate materials and dopant materials. Substrate materials are further divided into red, green, and blue light-emitting substrate materials, and dopant materials are divided into red, green, and blue light-emitting dopant materials. In this invention, the photoprotective material uses a green light-emitting substrate material because: firstly, the main material used in the green light-emitting layer is the green light-emitting substrate material, so the portion of the green light-emitting substrate material remaining on the green light-emitting layer after being removed by the laser will not affect the device's display or other functions; secondly, the red light-emitting layer can also use the green light-emitting substrate material as its main material, so the portion remaining on the red light-emitting layer after being removed by the laser will not affect the device's display or other functions; and thirdly, the blue light-emitting layer is the last to be deposited and processed, so no photoprotective material remains on the blue light-emitting layer. In summary, using a green light-emitting substrate material as the photoprotective material during the production process, even if there are residual materials in the R (red) and G (green) light-emitting material areas, it will not affect the device's display or other functions.

[0060] Of course, this patent is not limited to the main protective material for green light. Any material that can protect the light-emitting layer when vaporized by laser irradiation, and whose remaining material after vaporization has stable performance and little impact on product performance, is within the scope of protection of this patent.

[0061] like Figure 2 As shown, in a preferred embodiment of the present invention, the present invention provides a method for manufacturing a high-brightness, high-resolution OLED display device, the method comprising:

[0062] Step S201: Perform ITO compensation processing at the silicon substrate positions corresponding to the second preset pixel and the third preset pixel, respectively.

[0063] Step S202: The first light-emitting layer is deposited all over the silicon substrate by vapor deposition;

[0064] Step S203: Use a laser device to irradiate the light-emitting layer on the silicon substrate to vaporize part of the first light-emitting layer, thereby forming a first light-emitting material area of ​​a preset thickness only at the position corresponding to the first preset pixel on the silicon substrate.

[0065] Step S204: Photoprotective material and second light-emitting layer are sequentially deposited on the silicon substrate.

[0066] Step S205: Use a laser device to irradiate the light-emitting layer on the silicon substrate to vaporize part of the second light-emitting layer and part of the photoprotective material, thereby forming a second light-emitting material area of ​​a preset thickness only at the second preset pixel position on the silicon substrate.

[0067] Step S206: Photoprotective material and third light-emitting layer are sequentially deposited on the silicon substrate.

[0068] Step S207: Use a surface laser device to irradiate the light-emitting layer on the silicon substrate to vaporize part of the photoprotective material and the third light-emitting layer, thereby forming a third light-emitting material area of ​​a preset thickness only at the third preset pixel position on the silicon substrate.

[0069] Step S208: Deposit a common electron transport layer on the first luminescent material region, the second luminescent material region, and the third luminescent material region by vapor deposition.

[0070] In the above scheme, ITO compensation treatment is required before the evaporation process. ITO optical cavity length compensation is performed by sputtering and etching different thicknesses of ITO on the silicon substrate in advance, and then processing is carried out. This can overcome the microcavity effect.

[0071] After processing the R (red) luminescent material region, G (green) luminescent material region, and B (blue) luminescent material region, a common electron transport layer is deposited on top of the three, which is a material shared by R, G, and B for electron transport, electron injection, and cathode.

[0072] In a preferred embodiment of the present invention, before irradiating the light-emitting layer on the silicon substrate with a laser device, a corresponding mask is assembled on the silicon substrate, and the mask has an opening area adapted to the area of ​​the light-emitting layer to be vaporized.

[0073] In the above scheme, when performing laser vaporization on the light-emitting layer, a mask is needed for blocking. The mask has openings at corresponding positions so that the laser light can pass through and cover the corresponding positions. The light-emitting layer at those positions will be vaporized and eliminated, while the positions blocked by the mask are retained. Using this principle, excess light-emitting layers can be removed, thereby finally forming R (red) light-emitting material areas, G (green) light-emitting material areas, and B (blue) light-emitting material areas of preset thickness at the corresponding positions of R, G, and B pixels.

[0074] like Figure 3-8 As shown, the present invention also provides a manufacturing apparatus for a high-brightness, high-resolution OLED display device, the manufacturing apparatus comprising:

[0075] First mask 1, which is mounted on a silicon substrate and can only block the position corresponding to the R (red) pixel on the silicon substrate 5.

[0076] The second mask 2, which is mounted on the silicon substrate, can only block the position corresponding to the G (green) pixel on the silicon substrate 5;

[0077] The third mask 3, which is mounted on the silicon substrate, can only block the corresponding positions of the B (blue) pixels on the silicon substrate 5; and

[0078] Laser device 4 is used to irradiate and vaporize to remove part of the R (red) emitting layer, G (green) emitting layer and B (blue) emitting layer.

[0079] In the above scheme, the laser device 4 emits laser light toward the silicon substrate 5, and the light is blocked by masks with different structures to vaporize and eliminate the light-emitting layer in the corresponding area, so as to form the corresponding light-emitting material area in the corresponding pixel area.

[0080] In a preferred embodiment of the present invention, the device further includes:

[0081] The vapor deposition unit is used to deposit R (red) light-emitting layer, G (green) light-emitting layer, B (blue) light-emitting layer and common layer on silicon substrate.

[0082] In the above scheme, the evaporation unit evaporates the corresponding material onto the silicon substrate to form the corresponding light-emitting layer.

[0083] In a preferred embodiment of the present invention, the laser device is a surface laser for projecting surface laser light onto a silicon substrate, and the area of ​​the surface laser region is larger than the area of ​​the silicon substrate.

[0084] In the above scheme, the surface laser can project a surface laser onto the silicon substrate, which can eliminate the light-emitting layer in the corresponding area while retaining the desired light-emitting layer area.

[0085] In a preferred embodiment of the present invention, the laser device is a scanning laser device, and it is used to scan the entire upper surface of the silicon substrate.

[0086] In the above scheme, if the area of ​​the surface laser is not large, it can be scanned until the entire silicon-based OLED surface is scanned. This ensures that the light-emitting layer in the corresponding area can be eliminated, while the required light-emitting layer area is retained.

[0087] In summary, the high-brightness, high-resolution OLED display device manufacturing method and equipment provided by this invention overcomes the limitations of existing silicon-based OLEDs, which primarily achieve colorization using white light + color filter (CF). However, this type of display product suffers from low brightness and limited color gamut. This invention provides a method and equipment for manufacturing OLED display devices that utilizes a combination of surface laser, photomask, and vapor deposition during the manufacturing process to achieve Real RGB full-color display. This significantly improves brightness and color gamut while minimizing process complexity and requiring lower precision from the laser equipment.

[0088] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0089] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0090] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for manufacturing an OLED display device, characterized in that, The method includes: The first light-emitting layer is deposited entirely on the silicon substrate by vapor deposition. A laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the first light-emitting layer, thereby forming a first light-emitting material area of ​​a preset thickness only at the position corresponding to the first preset pixel on the silicon substrate. Photoprotective material and second light-emitting layer are sequentially deposited onto the silicon substrate. A laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the second light-emitting layer and part of the photoprotective material, thereby forming a second light-emitting material area of ​​a preset thickness only at the position corresponding to the second preset pixel on the silicon substrate. Photoprotective material and third light-emitting layer are sequentially deposited onto the silicon substrate. A surface laser device is used to irradiate the light-emitting layer on the silicon substrate to vaporize part of the photoprotective material and the third light-emitting layer, thereby forming a third light-emitting material region of a predetermined thickness only at the position corresponding to the third predetermined pixel on the silicon substrate.

2. The method for manufacturing an OLED display device according to claim 1, characterized in that, The first light-emitting layer is an R (red) light-emitting layer, the first light-emitting material region is an R (red) light-emitting material region, and the first preset pixel is an R (red) pixel; The second light-emitting layer is a G (green) light-emitting layer, the second light-emitting material area is a G (green) light-emitting material area, and the second preset pixel is a G (green) pixel; The third light-emitting layer is a B (blue) light-emitting layer, the third light-emitting material area is a B (blue) light-emitting material area, and the third preset pixel is a B (blue) pixel.

3. The method for manufacturing an OLED display device according to claim 2, characterized in that, The light-protecting material is a green light-based material.

4. The method for manufacturing an OLED display device according to claim 1, characterized in that, After irradiating the light-emitting layer on the silicon substrate using a surface laser device to vaporize part of the photoprotective material and the third light-emitting layer, thereby forming a third light-emitting material region of a predetermined thickness only at the position corresponding to the third predetermined pixel on the silicon substrate, the method further includes: An electron transport common layer is deposited on the first luminescent material region, the second luminescent material region, and the third luminescent material region.

5. The method for manufacturing an OLED display device according to claim 1, characterized in that, Before depositing the first light-emitting layer on the silicon substrate, the method further includes performing ITO compensation processing at the silicon substrate positions corresponding to the second preset pixel and the third preset pixel, respectively.

6. The method for manufacturing an OLED display device according to claim 1, characterized in that, Before irradiating the light-emitting layer on the silicon substrate using a laser device, a corresponding mask is assembled on the silicon substrate, and the mask has an opening area that matches the area where the light-emitting layer is to be vaporized.

7. A manufacturing apparatus for implementing the method of manufacturing an OLED display device according to any one of claims 1-6, characterized in that, The manufacturing equipment includes: The first mask, mounted on the silicon substrate, can only block the position corresponding to the R (red) pixel on the silicon substrate; The second mask, which is mounted on the silicon substrate, can only block the position corresponding to the G (green) pixel on the silicon substrate; A third mask, mounted on a silicon substrate, is capable of masking only the positions corresponding to the B (blue) pixels on the silicon substrate; and Laser devices are used to irradiate and vaporize parts of the R (red) emitting layer, G (green) emitting layer, B (blue) emitting layer, and photoprotective material.

8. The manufacturing equipment for the OLED display device according to claim 7, characterized in that, The device also includes: The vapor deposition unit is used to deposit R (red) light-emitting layer, G (green) light-emitting layer, B (blue) light-emitting layer, photoprotective material and common layer on silicon substrate.

9. The manufacturing equipment for the OLED display device according to claim 7, characterized in that, The laser device is a surface laser, used to project surface laser light onto a silicon substrate, and the area of ​​the surface laser region is larger than the area of ​​the silicon substrate.

10. The manufacturing equipment for the OLED display device according to claim 7, characterized in that, The laser device is a scanning laser device, and it is used to scan the entire upper surface of the silicon substrate.

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